A New Vertical JFET Power Device for Harsh Radiation Environments

An increasing demand for power electronic devices able to be operative in harsh radiation environments is now taking place. Specifically, in High Energy Physics experiments the required power devices are expected to withstand very high radiation levels which are normally too hard for most of the ava...
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Autor*in:	Pablo Fernández-Martínez [verfasserIn] David Flores [verfasserIn] Salvador Hidalgo [verfasserIn] Xavier Jordà [verfasserIn] Xavier Perpiñà [verfasserIn] David Quirion [verfasserIn] Lucia Ré [verfasserIn] Miguel Ullán [verfasserIn] Miquel Vellvehí [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2017

Schlagwörter:	rad-hard power devices JFET vertical power devices power distribution electronics for High Energy Physics

Übergeordnetes Werk:	In: Energies - MDPI AG, 2008, 10(2017), 2, p 256
Übergeordnetes Werk:	volume:10 ; year:2017 ; number:2, p 256

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/en10020256

Katalog-ID:	DOAJ079087493

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spelling	10.3390/en10020256 doi (DE-627)DOAJ079087493 (DE-599)DOAJb411c34c8eab4869b157f182bb120197 DE-627 ger DE-627 rakwb eng Pablo Fernández-Martínez verfasserin aut A New Vertical JFET Power Device for Harsh Radiation Environments 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier An increasing demand for power electronic devices able to be operative in harsh radiation environments is now taking place. Specifically, in High Energy Physics experiments the required power devices are expected to withstand very high radiation levels which are normally too hard for most of the available commercial solutions. In this context, a new vertical junction field effect transistor (JFET) has been designed and fabricated at the Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC). The new silicon V-JFET devices draw upon a deep-trenched technology to achieve volume conduction and low switch-off voltage, together with a moderately high voltage capability. The first batches of V-JFET prototypes have been already fabricated at the IMB-CNM clean room, and several aspects of their design, fabrication and the outcome of their characterization are summarized and discussed in this paper. Radiation hardness of the fabricated transistors have been tested both with gamma and neutron irradiations, and the results are also included in the contribution. rad-hard power devices JFET vertical power devices power distribution electronics for High Energy Physics Technology T David Flores verfasserin aut Salvador Hidalgo verfasserin aut Xavier Jordà verfasserin aut Xavier Perpiñà verfasserin aut David Quirion verfasserin aut Lucia Ré verfasserin aut Miguel Ullán verfasserin aut Miquel Vellvehí verfasserin aut In Energies MDPI AG, 2008 10(2017), 2, p 256 (DE-627)572083742 (DE-600)2437446-5 19961073 nnns volume:10 year:2017 number:2, p 256 https://doi.org/10.3390/en10020256 kostenfrei https://doaj.org/article/b411c34c8eab4869b157f182bb120197 kostenfrei http://www.mdpi.com/1996-1073/10/2/256 kostenfrei https://doaj.org/toc/1996-1073 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2017 2, p 256
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allfieldsSound	10.3390/en10020256 doi (DE-627)DOAJ079087493 (DE-599)DOAJb411c34c8eab4869b157f182bb120197 DE-627 ger DE-627 rakwb eng Pablo Fernández-Martínez verfasserin aut A New Vertical JFET Power Device for Harsh Radiation Environments 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier An increasing demand for power electronic devices able to be operative in harsh radiation environments is now taking place. Specifically, in High Energy Physics experiments the required power devices are expected to withstand very high radiation levels which are normally too hard for most of the available commercial solutions. In this context, a new vertical junction field effect transistor (JFET) has been designed and fabricated at the Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC). The new silicon V-JFET devices draw upon a deep-trenched technology to achieve volume conduction and low switch-off voltage, together with a moderately high voltage capability. The first batches of V-JFET prototypes have been already fabricated at the IMB-CNM clean room, and several aspects of their design, fabrication and the outcome of their characterization are summarized and discussed in this paper. Radiation hardness of the fabricated transistors have been tested both with gamma and neutron irradiations, and the results are also included in the contribution. rad-hard power devices JFET vertical power devices power distribution electronics for High Energy Physics Technology T David Flores verfasserin aut Salvador Hidalgo verfasserin aut Xavier Jordà verfasserin aut Xavier Perpiñà verfasserin aut David Quirion verfasserin aut Lucia Ré verfasserin aut Miguel Ullán verfasserin aut Miquel Vellvehí verfasserin aut In Energies MDPI AG, 2008 10(2017), 2, p 256 (DE-627)572083742 (DE-600)2437446-5 19961073 nnns volume:10 year:2017 number:2, p 256 https://doi.org/10.3390/en10020256 kostenfrei https://doaj.org/article/b411c34c8eab4869b157f182bb120197 kostenfrei http://www.mdpi.com/1996-1073/10/2/256 kostenfrei https://doaj.org/toc/1996-1073 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2017 2, p 256
language	English
source	In Energies 10(2017), 2, p 256 volume:10 year:2017 number:2, p 256
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authorswithroles_txt_mv	Pablo Fernández-Martínez @@aut@@ David Flores @@aut@@ Salvador Hidalgo @@aut@@ Xavier Jordà @@aut@@ Xavier Perpiñà @@aut@@ David Quirion @@aut@@ Lucia Ré @@aut@@ Miguel Ullán @@aut@@ Miquel Vellvehí @@aut@@
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author	Pablo Fernández-Martínez
spellingShingle	Pablo Fernández-Martínez misc rad-hard power devices misc JFET misc vertical power devices misc power distribution misc electronics for High Energy Physics misc Technology misc T A New Vertical JFET Power Device for Harsh Radiation Environments
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title	A New Vertical JFET Power Device for Harsh Radiation Environments
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title_sort	new vertical jfet power device for harsh radiation environments
title_auth	A New Vertical JFET Power Device for Harsh Radiation Environments
abstract	An increasing demand for power electronic devices able to be operative in harsh radiation environments is now taking place. Specifically, in High Energy Physics experiments the required power devices are expected to withstand very high radiation levels which are normally too hard for most of the available commercial solutions. In this context, a new vertical junction field effect transistor (JFET) has been designed and fabricated at the Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC). The new silicon V-JFET devices draw upon a deep-trenched technology to achieve volume conduction and low switch-off voltage, together with a moderately high voltage capability. The first batches of V-JFET prototypes have been already fabricated at the IMB-CNM clean room, and several aspects of their design, fabrication and the outcome of their characterization are summarized and discussed in this paper. Radiation hardness of the fabricated transistors have been tested both with gamma and neutron irradiations, and the results are also included in the contribution.
abstractGer	An increasing demand for power electronic devices able to be operative in harsh radiation environments is now taking place. Specifically, in High Energy Physics experiments the required power devices are expected to withstand very high radiation levels which are normally too hard for most of the available commercial solutions. In this context, a new vertical junction field effect transistor (JFET) has been designed and fabricated at the Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC). The new silicon V-JFET devices draw upon a deep-trenched technology to achieve volume conduction and low switch-off voltage, together with a moderately high voltage capability. The first batches of V-JFET prototypes have been already fabricated at the IMB-CNM clean room, and several aspects of their design, fabrication and the outcome of their characterization are summarized and discussed in this paper. Radiation hardness of the fabricated transistors have been tested both with gamma and neutron irradiations, and the results are also included in the contribution.
abstract_unstemmed	An increasing demand for power electronic devices able to be operative in harsh radiation environments is now taking place. Specifically, in High Energy Physics experiments the required power devices are expected to withstand very high radiation levels which are normally too hard for most of the available commercial solutions. In this context, a new vertical junction field effect transistor (JFET) has been designed and fabricated at the Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC). The new silicon V-JFET devices draw upon a deep-trenched technology to achieve volume conduction and low switch-off voltage, together with a moderately high voltage capability. The first batches of V-JFET prototypes have been already fabricated at the IMB-CNM clean room, and several aspects of their design, fabrication and the outcome of their characterization are summarized and discussed in this paper. Radiation hardness of the fabricated transistors have been tested both with gamma and neutron irradiations, and the results are also included in the contribution.
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title_short	A New Vertical JFET Power Device for Harsh Radiation Environments
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