Organic Phase‐Change Memory Transistor Based on an Organic Semiconductor with Reversible Molecular Conformation Transition
Abstract Phase‐change semiconductor is one of the best candidates for designing nonvolatile memory, but it has never been realized in organic semiconductors until now. Here, a phase‐changeable and high‐mobility organic semiconductor (3,6‐DATT) is first synthesized. Benefiting from the introduction o...
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| Autor*in: |
Yongxu Hu [verfasserIn] Lei Zheng [verfasserIn] Jie Li [verfasserIn] Yinan Huang [verfasserIn] Zhongwu Wang [verfasserIn] Xueying Lu [verfasserIn] Li Yu [verfasserIn] Shuguang Wang [verfasserIn] Yajing Sun [verfasserIn] Shuaishuai Ding [verfasserIn] Deyang Ji [verfasserIn] Yong Lei [verfasserIn] Xiaosong Chen [verfasserIn] Liqiang Li [verfasserIn] Wenping Hu [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2023 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
In: Advanced Science - Wiley, 2015, 10(2023), 4, Seite n/a-n/a |
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| Übergeordnetes Werk: |
volume:10 ; year:2023 ; number:4 ; pages:n/a-n/a |
| Links: |
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| DOI / URN: |
10.1002/advs.202205694 |
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| Katalog-ID: |
DOAJ081134274 |
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| 520 | |a Abstract Phase‐change semiconductor is one of the best candidates for designing nonvolatile memory, but it has never been realized in organic semiconductors until now. Here, a phase‐changeable and high‐mobility organic semiconductor (3,6‐DATT) is first synthesized. Benefiting from the introduction of electrostatic hydrogen bond (S···H), the molecular conformation of 3,6‐DATT crystals can be reversibly modulated by the electric field and ultraviolet irradiation. Through experimental and theoretical verification, the tiny difference in molecular conformation leads to crystalline polymorphisms and dramatically distinct charge transport properties, based on which a high‐performance organic phase‐change memory transistor (OPCMT) is constructed. The OPCMT exhibits a quick programming/erasing rate (about 3 s), long retention time (more than 2 h), and large memory window (i.e., large threshold voltage shift over 30 V). This work presents a new molecule design concept for organic semiconductors with reversible molecular conformation transition and opens a novel avenue for memory devices and other functional applications. | ||
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10.1002/advs.202205694 doi (DE-627)DOAJ081134274 (DE-599)DOAJd001520ce7194fcc94e8103c560dd9a2 DE-627 ger DE-627 rakwb eng Yongxu Hu verfasserin aut Organic Phase‐Change Memory Transistor Based on an Organic Semiconductor with Reversible Molecular Conformation Transition 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Phase‐change semiconductor is one of the best candidates for designing nonvolatile memory, but it has never been realized in organic semiconductors until now. Here, a phase‐changeable and high‐mobility organic semiconductor (3,6‐DATT) is first synthesized. Benefiting from the introduction of electrostatic hydrogen bond (S···H), the molecular conformation of 3,6‐DATT crystals can be reversibly modulated by the electric field and ultraviolet irradiation. Through experimental and theoretical verification, the tiny difference in molecular conformation leads to crystalline polymorphisms and dramatically distinct charge transport properties, based on which a high‐performance organic phase‐change memory transistor (OPCMT) is constructed. The OPCMT exhibits a quick programming/erasing rate (about 3 s), long retention time (more than 2 h), and large memory window (i.e., large threshold voltage shift over 30 V). This work presents a new molecule design concept for organic semiconductors with reversible molecular conformation transition and opens a novel avenue for memory devices and other functional applications. molecular conformation molecular devices organic electronics organic semiconductor phase‐change memory Science Q Lei Zheng verfasserin aut Jie Li verfasserin aut Yinan Huang verfasserin aut Zhongwu Wang verfasserin aut Xueying Lu verfasserin aut Li Yu verfasserin aut Shuguang Wang verfasserin aut Yajing Sun verfasserin aut Shuaishuai Ding verfasserin aut Deyang Ji verfasserin aut Yong Lei verfasserin aut Xiaosong Chen verfasserin aut Liqiang Li verfasserin aut Wenping Hu verfasserin aut In Advanced Science Wiley, 2015 10(2023), 4, Seite n/a-n/a (DE-627)817357777 (DE-600)2808093-2 21983844 nnns volume:10 year:2023 number:4 pages:n/a-n/a https://doi.org/10.1002/advs.202205694 kostenfrei https://doaj.org/article/d001520ce7194fcc94e8103c560dd9a2 kostenfrei https://doi.org/10.1002/advs.202205694 kostenfrei https://doaj.org/toc/2198-3844 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2023 4 n/a-n/a |
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10.1002/advs.202205694 doi (DE-627)DOAJ081134274 (DE-599)DOAJd001520ce7194fcc94e8103c560dd9a2 DE-627 ger DE-627 rakwb eng Yongxu Hu verfasserin aut Organic Phase‐Change Memory Transistor Based on an Organic Semiconductor with Reversible Molecular Conformation Transition 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Phase‐change semiconductor is one of the best candidates for designing nonvolatile memory, but it has never been realized in organic semiconductors until now. Here, a phase‐changeable and high‐mobility organic semiconductor (3,6‐DATT) is first synthesized. Benefiting from the introduction of electrostatic hydrogen bond (S···H), the molecular conformation of 3,6‐DATT crystals can be reversibly modulated by the electric field and ultraviolet irradiation. Through experimental and theoretical verification, the tiny difference in molecular conformation leads to crystalline polymorphisms and dramatically distinct charge transport properties, based on which a high‐performance organic phase‐change memory transistor (OPCMT) is constructed. The OPCMT exhibits a quick programming/erasing rate (about 3 s), long retention time (more than 2 h), and large memory window (i.e., large threshold voltage shift over 30 V). This work presents a new molecule design concept for organic semiconductors with reversible molecular conformation transition and opens a novel avenue for memory devices and other functional applications. molecular conformation molecular devices organic electronics organic semiconductor phase‐change memory Science Q Lei Zheng verfasserin aut Jie Li verfasserin aut Yinan Huang verfasserin aut Zhongwu Wang verfasserin aut Xueying Lu verfasserin aut Li Yu verfasserin aut Shuguang Wang verfasserin aut Yajing Sun verfasserin aut Shuaishuai Ding verfasserin aut Deyang Ji verfasserin aut Yong Lei verfasserin aut Xiaosong Chen verfasserin aut Liqiang Li verfasserin aut Wenping Hu verfasserin aut In Advanced Science Wiley, 2015 10(2023), 4, Seite n/a-n/a (DE-627)817357777 (DE-600)2808093-2 21983844 nnns volume:10 year:2023 number:4 pages:n/a-n/a https://doi.org/10.1002/advs.202205694 kostenfrei https://doaj.org/article/d001520ce7194fcc94e8103c560dd9a2 kostenfrei https://doi.org/10.1002/advs.202205694 kostenfrei https://doaj.org/toc/2198-3844 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2023 4 n/a-n/a |
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10.1002/advs.202205694 doi (DE-627)DOAJ081134274 (DE-599)DOAJd001520ce7194fcc94e8103c560dd9a2 DE-627 ger DE-627 rakwb eng Yongxu Hu verfasserin aut Organic Phase‐Change Memory Transistor Based on an Organic Semiconductor with Reversible Molecular Conformation Transition 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Phase‐change semiconductor is one of the best candidates for designing nonvolatile memory, but it has never been realized in organic semiconductors until now. Here, a phase‐changeable and high‐mobility organic semiconductor (3,6‐DATT) is first synthesized. Benefiting from the introduction of electrostatic hydrogen bond (S···H), the molecular conformation of 3,6‐DATT crystals can be reversibly modulated by the electric field and ultraviolet irradiation. Through experimental and theoretical verification, the tiny difference in molecular conformation leads to crystalline polymorphisms and dramatically distinct charge transport properties, based on which a high‐performance organic phase‐change memory transistor (OPCMT) is constructed. The OPCMT exhibits a quick programming/erasing rate (about 3 s), long retention time (more than 2 h), and large memory window (i.e., large threshold voltage shift over 30 V). This work presents a new molecule design concept for organic semiconductors with reversible molecular conformation transition and opens a novel avenue for memory devices and other functional applications. molecular conformation molecular devices organic electronics organic semiconductor phase‐change memory Science Q Lei Zheng verfasserin aut Jie Li verfasserin aut Yinan Huang verfasserin aut Zhongwu Wang verfasserin aut Xueying Lu verfasserin aut Li Yu verfasserin aut Shuguang Wang verfasserin aut Yajing Sun verfasserin aut Shuaishuai Ding verfasserin aut Deyang Ji verfasserin aut Yong Lei verfasserin aut Xiaosong Chen verfasserin aut Liqiang Li verfasserin aut Wenping Hu verfasserin aut In Advanced Science Wiley, 2015 10(2023), 4, Seite n/a-n/a (DE-627)817357777 (DE-600)2808093-2 21983844 nnns volume:10 year:2023 number:4 pages:n/a-n/a https://doi.org/10.1002/advs.202205694 kostenfrei https://doaj.org/article/d001520ce7194fcc94e8103c560dd9a2 kostenfrei https://doi.org/10.1002/advs.202205694 kostenfrei https://doaj.org/toc/2198-3844 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2023 4 n/a-n/a |
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10.1002/advs.202205694 doi (DE-627)DOAJ081134274 (DE-599)DOAJd001520ce7194fcc94e8103c560dd9a2 DE-627 ger DE-627 rakwb eng Yongxu Hu verfasserin aut Organic Phase‐Change Memory Transistor Based on an Organic Semiconductor with Reversible Molecular Conformation Transition 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Phase‐change semiconductor is one of the best candidates for designing nonvolatile memory, but it has never been realized in organic semiconductors until now. Here, a phase‐changeable and high‐mobility organic semiconductor (3,6‐DATT) is first synthesized. Benefiting from the introduction of electrostatic hydrogen bond (S···H), the molecular conformation of 3,6‐DATT crystals can be reversibly modulated by the electric field and ultraviolet irradiation. Through experimental and theoretical verification, the tiny difference in molecular conformation leads to crystalline polymorphisms and dramatically distinct charge transport properties, based on which a high‐performance organic phase‐change memory transistor (OPCMT) is constructed. The OPCMT exhibits a quick programming/erasing rate (about 3 s), long retention time (more than 2 h), and large memory window (i.e., large threshold voltage shift over 30 V). This work presents a new molecule design concept for organic semiconductors with reversible molecular conformation transition and opens a novel avenue for memory devices and other functional applications. molecular conformation molecular devices organic electronics organic semiconductor phase‐change memory Science Q Lei Zheng verfasserin aut Jie Li verfasserin aut Yinan Huang verfasserin aut Zhongwu Wang verfasserin aut Xueying Lu verfasserin aut Li Yu verfasserin aut Shuguang Wang verfasserin aut Yajing Sun verfasserin aut Shuaishuai Ding verfasserin aut Deyang Ji verfasserin aut Yong Lei verfasserin aut Xiaosong Chen verfasserin aut Liqiang Li verfasserin aut Wenping Hu verfasserin aut In Advanced Science Wiley, 2015 10(2023), 4, Seite n/a-n/a (DE-627)817357777 (DE-600)2808093-2 21983844 nnns volume:10 year:2023 number:4 pages:n/a-n/a https://doi.org/10.1002/advs.202205694 kostenfrei https://doaj.org/article/d001520ce7194fcc94e8103c560dd9a2 kostenfrei https://doi.org/10.1002/advs.202205694 kostenfrei https://doaj.org/toc/2198-3844 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 10 2023 4 n/a-n/a |
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Organic Phase‐Change Memory Transistor Based on an Organic Semiconductor with Reversible Molecular Conformation Transition |
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Abstract Phase‐change semiconductor is one of the best candidates for designing nonvolatile memory, but it has never been realized in organic semiconductors until now. Here, a phase‐changeable and high‐mobility organic semiconductor (3,6‐DATT) is first synthesized. Benefiting from the introduction of electrostatic hydrogen bond (S···H), the molecular conformation of 3,6‐DATT crystals can be reversibly modulated by the electric field and ultraviolet irradiation. Through experimental and theoretical verification, the tiny difference in molecular conformation leads to crystalline polymorphisms and dramatically distinct charge transport properties, based on which a high‐performance organic phase‐change memory transistor (OPCMT) is constructed. The OPCMT exhibits a quick programming/erasing rate (about 3 s), long retention time (more than 2 h), and large memory window (i.e., large threshold voltage shift over 30 V). This work presents a new molecule design concept for organic semiconductors with reversible molecular conformation transition and opens a novel avenue for memory devices and other functional applications. |
| abstractGer |
Abstract Phase‐change semiconductor is one of the best candidates for designing nonvolatile memory, but it has never been realized in organic semiconductors until now. Here, a phase‐changeable and high‐mobility organic semiconductor (3,6‐DATT) is first synthesized. Benefiting from the introduction of electrostatic hydrogen bond (S···H), the molecular conformation of 3,6‐DATT crystals can be reversibly modulated by the electric field and ultraviolet irradiation. Through experimental and theoretical verification, the tiny difference in molecular conformation leads to crystalline polymorphisms and dramatically distinct charge transport properties, based on which a high‐performance organic phase‐change memory transistor (OPCMT) is constructed. The OPCMT exhibits a quick programming/erasing rate (about 3 s), long retention time (more than 2 h), and large memory window (i.e., large threshold voltage shift over 30 V). This work presents a new molecule design concept for organic semiconductors with reversible molecular conformation transition and opens a novel avenue for memory devices and other functional applications. |
| abstract_unstemmed |
Abstract Phase‐change semiconductor is one of the best candidates for designing nonvolatile memory, but it has never been realized in organic semiconductors until now. Here, a phase‐changeable and high‐mobility organic semiconductor (3,6‐DATT) is first synthesized. Benefiting from the introduction of electrostatic hydrogen bond (S···H), the molecular conformation of 3,6‐DATT crystals can be reversibly modulated by the electric field and ultraviolet irradiation. Through experimental and theoretical verification, the tiny difference in molecular conformation leads to crystalline polymorphisms and dramatically distinct charge transport properties, based on which a high‐performance organic phase‐change memory transistor (OPCMT) is constructed. The OPCMT exhibits a quick programming/erasing rate (about 3 s), long retention time (more than 2 h), and large memory window (i.e., large threshold voltage shift over 30 V). This work presents a new molecule design concept for organic semiconductors with reversible molecular conformation transition and opens a novel avenue for memory devices and other functional applications. |
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