Crystalline Silicon (c-Si)-Based Tunnel Oxide Passivated Contact (TOPCon) Solar Cells: A Review

Contact selectivity is a key parameter for enhancing and improving the power conversion efficiency (PCE) of crystalline silicon (c-Si)-based solar cells. Carrier selective contacts (CSC) are the key technology which has the potential to achieve a higher PCE for c-Si-based solar cells closer to their...
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Autor*in:	Hayat Ullah [verfasserIn] Stanislaw Czapp [verfasserIn] Seweryn Szultka [verfasserIn] Hanan Tariq [verfasserIn] Usama Bin Qasim [verfasserIn] Hassan Imran [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	carrier selective contacts contact resistance tunnel oxide passivated contact renewable energy surface passivation

Übergeordnetes Werk:	In: Energies - MDPI AG, 2008, 16(2023), 2, p 715
Übergeordnetes Werk:	volume:16 ; year:2023 ; number:2, p 715

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/en16020715

Katalog-ID:	DOAJ081812116

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spelling	10.3390/en16020715 doi (DE-627)DOAJ081812116 (DE-599)DOAJ895f432c330a49cfa40b0bfe44e9aa9a DE-627 ger DE-627 rakwb eng Hayat Ullah verfasserin aut Crystalline Silicon (c-Si)-Based Tunnel Oxide Passivated Contact (TOPCon) Solar Cells: A Review 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Contact selectivity is a key parameter for enhancing and improving the power conversion efficiency (PCE) of crystalline silicon (c-Si)-based solar cells. Carrier selective contacts (CSC) are the key technology which has the potential to achieve a higher PCE for c-Si-based solar cells closer to their theoretical efficiency limit. A recent and state-of-the-art approach in this domain is the tunnel oxide passivated contact (TOPCon) approach, which is completely different from the existing classical heterojunction solar cells. The main and core element of this contact is the tunnel oxide, and its main role is to cut back the minority carrier recombination at the interface. A state-of-the-art n-type c-Si-based TOPCon solar cell featuring a passivated rear contact was experimentally analyzed, and the highest PCE record of ~25.7% was achieved. It has a high fill factor (FF) of ~83.3%. These reported results prove that the highest efficiency potential is that of the passivated full area rear contact structures and it is more efficient than that of the partial rear contact (PRC) structures. In this paper, a review is presented which considers the key characteristics of TOPCon solar cells, i.e., minority carrier recombination, contact resistance, and surface passivation. Additionally, practical challenges and key issues related to TOPCon solar cells are also highlighted. Finally, the focus turns to the characteristics of TOPCon solar cells, which offer an improved and better understanding of doping layers and tunnel oxide along with their mutual and combined effect on the overall performance of TOPCon solar cells. carrier selective contacts contact resistance tunnel oxide passivated contact renewable energy surface passivation Technology T Stanislaw Czapp verfasserin aut Seweryn Szultka verfasserin aut Hanan Tariq verfasserin aut Usama Bin Qasim verfasserin aut Hassan Imran verfasserin aut In Energies MDPI AG, 2008 16(2023), 2, p 715 (DE-627)572083742 (DE-600)2437446-5 19961073 nnns volume:16 year:2023 number:2, p 715 https://doi.org/10.3390/en16020715 kostenfrei https://doaj.org/article/895f432c330a49cfa40b0bfe44e9aa9a kostenfrei https://www.mdpi.com/1996-1073/16/2/715 kostenfrei https://doaj.org/toc/1996-1073 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 16 2023 2, p 715
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allfieldsSound	10.3390/en16020715 doi (DE-627)DOAJ081812116 (DE-599)DOAJ895f432c330a49cfa40b0bfe44e9aa9a DE-627 ger DE-627 rakwb eng Hayat Ullah verfasserin aut Crystalline Silicon (c-Si)-Based Tunnel Oxide Passivated Contact (TOPCon) Solar Cells: A Review 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Contact selectivity is a key parameter for enhancing and improving the power conversion efficiency (PCE) of crystalline silicon (c-Si)-based solar cells. Carrier selective contacts (CSC) are the key technology which has the potential to achieve a higher PCE for c-Si-based solar cells closer to their theoretical efficiency limit. A recent and state-of-the-art approach in this domain is the tunnel oxide passivated contact (TOPCon) approach, which is completely different from the existing classical heterojunction solar cells. The main and core element of this contact is the tunnel oxide, and its main role is to cut back the minority carrier recombination at the interface. A state-of-the-art n-type c-Si-based TOPCon solar cell featuring a passivated rear contact was experimentally analyzed, and the highest PCE record of ~25.7% was achieved. It has a high fill factor (FF) of ~83.3%. These reported results prove that the highest efficiency potential is that of the passivated full area rear contact structures and it is more efficient than that of the partial rear contact (PRC) structures. In this paper, a review is presented which considers the key characteristics of TOPCon solar cells, i.e., minority carrier recombination, contact resistance, and surface passivation. Additionally, practical challenges and key issues related to TOPCon solar cells are also highlighted. Finally, the focus turns to the characteristics of TOPCon solar cells, which offer an improved and better understanding of doping layers and tunnel oxide along with their mutual and combined effect on the overall performance of TOPCon solar cells. carrier selective contacts contact resistance tunnel oxide passivated contact renewable energy surface passivation Technology T Stanislaw Czapp verfasserin aut Seweryn Szultka verfasserin aut Hanan Tariq verfasserin aut Usama Bin Qasim verfasserin aut Hassan Imran verfasserin aut In Energies MDPI AG, 2008 16(2023), 2, p 715 (DE-627)572083742 (DE-600)2437446-5 19961073 nnns volume:16 year:2023 number:2, p 715 https://doi.org/10.3390/en16020715 kostenfrei https://doaj.org/article/895f432c330a49cfa40b0bfe44e9aa9a kostenfrei https://www.mdpi.com/1996-1073/16/2/715 kostenfrei https://doaj.org/toc/1996-1073 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 16 2023 2, p 715
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author	Hayat Ullah
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topic	misc carrier selective contacts misc contact resistance misc tunnel oxide passivated contact misc renewable energy misc surface passivation misc Technology misc T
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title	Crystalline Silicon (c-Si)-Based Tunnel Oxide Passivated Contact (TOPCon) Solar Cells: A Review
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title_sort	crystalline silicon (c-si)-based tunnel oxide passivated contact (topcon) solar cells: a review
title_auth	Crystalline Silicon (c-Si)-Based Tunnel Oxide Passivated Contact (TOPCon) Solar Cells: A Review
abstract	Contact selectivity is a key parameter for enhancing and improving the power conversion efficiency (PCE) of crystalline silicon (c-Si)-based solar cells. Carrier selective contacts (CSC) are the key technology which has the potential to achieve a higher PCE for c-Si-based solar cells closer to their theoretical efficiency limit. A recent and state-of-the-art approach in this domain is the tunnel oxide passivated contact (TOPCon) approach, which is completely different from the existing classical heterojunction solar cells. The main and core element of this contact is the tunnel oxide, and its main role is to cut back the minority carrier recombination at the interface. A state-of-the-art n-type c-Si-based TOPCon solar cell featuring a passivated rear contact was experimentally analyzed, and the highest PCE record of ~25.7% was achieved. It has a high fill factor (FF) of ~83.3%. These reported results prove that the highest efficiency potential is that of the passivated full area rear contact structures and it is more efficient than that of the partial rear contact (PRC) structures. In this paper, a review is presented which considers the key characteristics of TOPCon solar cells, i.e., minority carrier recombination, contact resistance, and surface passivation. Additionally, practical challenges and key issues related to TOPCon solar cells are also highlighted. Finally, the focus turns to the characteristics of TOPCon solar cells, which offer an improved and better understanding of doping layers and tunnel oxide along with their mutual and combined effect on the overall performance of TOPCon solar cells.
abstractGer	Contact selectivity is a key parameter for enhancing and improving the power conversion efficiency (PCE) of crystalline silicon (c-Si)-based solar cells. Carrier selective contacts (CSC) are the key technology which has the potential to achieve a higher PCE for c-Si-based solar cells closer to their theoretical efficiency limit. A recent and state-of-the-art approach in this domain is the tunnel oxide passivated contact (TOPCon) approach, which is completely different from the existing classical heterojunction solar cells. The main and core element of this contact is the tunnel oxide, and its main role is to cut back the minority carrier recombination at the interface. A state-of-the-art n-type c-Si-based TOPCon solar cell featuring a passivated rear contact was experimentally analyzed, and the highest PCE record of ~25.7% was achieved. It has a high fill factor (FF) of ~83.3%. These reported results prove that the highest efficiency potential is that of the passivated full area rear contact structures and it is more efficient than that of the partial rear contact (PRC) structures. In this paper, a review is presented which considers the key characteristics of TOPCon solar cells, i.e., minority carrier recombination, contact resistance, and surface passivation. Additionally, practical challenges and key issues related to TOPCon solar cells are also highlighted. Finally, the focus turns to the characteristics of TOPCon solar cells, which offer an improved and better understanding of doping layers and tunnel oxide along with their mutual and combined effect on the overall performance of TOPCon solar cells.
abstract_unstemmed	Contact selectivity is a key parameter for enhancing and improving the power conversion efficiency (PCE) of crystalline silicon (c-Si)-based solar cells. Carrier selective contacts (CSC) are the key technology which has the potential to achieve a higher PCE for c-Si-based solar cells closer to their theoretical efficiency limit. A recent and state-of-the-art approach in this domain is the tunnel oxide passivated contact (TOPCon) approach, which is completely different from the existing classical heterojunction solar cells. The main and core element of this contact is the tunnel oxide, and its main role is to cut back the minority carrier recombination at the interface. A state-of-the-art n-type c-Si-based TOPCon solar cell featuring a passivated rear contact was experimentally analyzed, and the highest PCE record of ~25.7% was achieved. It has a high fill factor (FF) of ~83.3%. These reported results prove that the highest efficiency potential is that of the passivated full area rear contact structures and it is more efficient than that of the partial rear contact (PRC) structures. In this paper, a review is presented which considers the key characteristics of TOPCon solar cells, i.e., minority carrier recombination, contact resistance, and surface passivation. Additionally, practical challenges and key issues related to TOPCon solar cells are also highlighted. Finally, the focus turns to the characteristics of TOPCon solar cells, which offer an improved and better understanding of doping layers and tunnel oxide along with their mutual and combined effect on the overall performance of TOPCon solar cells.
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title_short	Crystalline Silicon (c-Si)-Based Tunnel Oxide Passivated Contact (TOPCon) Solar Cells: A Review
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Crystalline Silicon (c-Si)-Based Tunnel Oxide Passivated Contact (TOPCon) Solar Cells: A Review

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