An Optoelectronic Detector with High Precision for Compact Grating Encoder Application
This paper presents a novel optoelectronic detection array that adopts the research idea of optical, mechanical and electrical integration. Through the design of new detectors and ASIC, the mutual restriction between high accuracy and miniaturization of the grating encoder is solved. A simulation mo...
Ausführliche Beschreibung
Autor*in: |
Yusong Mu [verfasserIn] Nanjian Hou [verfasserIn] Chao Wang [verfasserIn] Yang Zhao [verfasserIn] Kaixin Chen [verfasserIn] Yaodan Chi [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch |
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2022 |
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In: Electronics - MDPI AG, 2013, 11(2022), 21, p 3486 |
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Übergeordnetes Werk: |
volume:11 ; year:2022 ; number:21, p 3486 |
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DOI / URN: |
10.3390/electronics11213486 |
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Katalog-ID: |
DOAJ083615903 |
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10.3390/electronics11213486 doi (DE-627)DOAJ083615903 (DE-599)DOAJc12e20ff63614cdd81be8f1acf057bb3 DE-627 ger DE-627 rakwb eng TK7800-8360 Yusong Mu verfasserin aut An Optoelectronic Detector with High Precision for Compact Grating Encoder Application 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper presents a novel optoelectronic detection array that adopts the research idea of optical, mechanical and electrical integration. Through the design of new detectors and ASIC, the mutual restriction between high accuracy and miniaturization of the grating encoder is solved. A simulation model of the “broken line” detector structure and process was established that only meets the needs of a compact array layout but also ensures a good photoelectric conversion rate. In addition, we used a professional design program to complete the layout of the ASIC, which maximized the recovery of the signal received by the detector. The simulation and noise analysis results show that the SNRs of the output signal are greater than 60 dB with a 400 kHz response frequency. optoelectronic detector integrated circuit phase difference filtering noise optimization Electronics Nanjian Hou verfasserin aut Chao Wang verfasserin aut Yang Zhao verfasserin aut Kaixin Chen verfasserin aut Yaodan Chi verfasserin aut In Electronics MDPI AG, 2013 11(2022), 21, p 3486 (DE-627)718626478 (DE-600)2662127-7 20799292 nnns volume:11 year:2022 number:21, p 3486 https://doi.org/10.3390/electronics11213486 kostenfrei https://doaj.org/article/c12e20ff63614cdd81be8f1acf057bb3 kostenfrei https://www.mdpi.com/2079-9292/11/21/3486 kostenfrei https://doaj.org/toc/2079-9292 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2022 21, p 3486 |
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10.3390/electronics11213486 doi (DE-627)DOAJ083615903 (DE-599)DOAJc12e20ff63614cdd81be8f1acf057bb3 DE-627 ger DE-627 rakwb eng TK7800-8360 Yusong Mu verfasserin aut An Optoelectronic Detector with High Precision for Compact Grating Encoder Application 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper presents a novel optoelectronic detection array that adopts the research idea of optical, mechanical and electrical integration. Through the design of new detectors and ASIC, the mutual restriction between high accuracy and miniaturization of the grating encoder is solved. A simulation model of the “broken line” detector structure and process was established that only meets the needs of a compact array layout but also ensures a good photoelectric conversion rate. In addition, we used a professional design program to complete the layout of the ASIC, which maximized the recovery of the signal received by the detector. The simulation and noise analysis results show that the SNRs of the output signal are greater than 60 dB with a 400 kHz response frequency. optoelectronic detector integrated circuit phase difference filtering noise optimization Electronics Nanjian Hou verfasserin aut Chao Wang verfasserin aut Yang Zhao verfasserin aut Kaixin Chen verfasserin aut Yaodan Chi verfasserin aut In Electronics MDPI AG, 2013 11(2022), 21, p 3486 (DE-627)718626478 (DE-600)2662127-7 20799292 nnns volume:11 year:2022 number:21, p 3486 https://doi.org/10.3390/electronics11213486 kostenfrei https://doaj.org/article/c12e20ff63614cdd81be8f1acf057bb3 kostenfrei https://www.mdpi.com/2079-9292/11/21/3486 kostenfrei https://doaj.org/toc/2079-9292 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2022 21, p 3486 |
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10.3390/electronics11213486 doi (DE-627)DOAJ083615903 (DE-599)DOAJc12e20ff63614cdd81be8f1acf057bb3 DE-627 ger DE-627 rakwb eng TK7800-8360 Yusong Mu verfasserin aut An Optoelectronic Detector with High Precision for Compact Grating Encoder Application 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper presents a novel optoelectronic detection array that adopts the research idea of optical, mechanical and electrical integration. Through the design of new detectors and ASIC, the mutual restriction between high accuracy and miniaturization of the grating encoder is solved. A simulation model of the “broken line” detector structure and process was established that only meets the needs of a compact array layout but also ensures a good photoelectric conversion rate. In addition, we used a professional design program to complete the layout of the ASIC, which maximized the recovery of the signal received by the detector. The simulation and noise analysis results show that the SNRs of the output signal are greater than 60 dB with a 400 kHz response frequency. optoelectronic detector integrated circuit phase difference filtering noise optimization Electronics Nanjian Hou verfasserin aut Chao Wang verfasserin aut Yang Zhao verfasserin aut Kaixin Chen verfasserin aut Yaodan Chi verfasserin aut In Electronics MDPI AG, 2013 11(2022), 21, p 3486 (DE-627)718626478 (DE-600)2662127-7 20799292 nnns volume:11 year:2022 number:21, p 3486 https://doi.org/10.3390/electronics11213486 kostenfrei https://doaj.org/article/c12e20ff63614cdd81be8f1acf057bb3 kostenfrei https://www.mdpi.com/2079-9292/11/21/3486 kostenfrei https://doaj.org/toc/2079-9292 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2022 21, p 3486 |
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10.3390/electronics11213486 doi (DE-627)DOAJ083615903 (DE-599)DOAJc12e20ff63614cdd81be8f1acf057bb3 DE-627 ger DE-627 rakwb eng TK7800-8360 Yusong Mu verfasserin aut An Optoelectronic Detector with High Precision for Compact Grating Encoder Application 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper presents a novel optoelectronic detection array that adopts the research idea of optical, mechanical and electrical integration. Through the design of new detectors and ASIC, the mutual restriction between high accuracy and miniaturization of the grating encoder is solved. A simulation model of the “broken line” detector structure and process was established that only meets the needs of a compact array layout but also ensures a good photoelectric conversion rate. In addition, we used a professional design program to complete the layout of the ASIC, which maximized the recovery of the signal received by the detector. The simulation and noise analysis results show that the SNRs of the output signal are greater than 60 dB with a 400 kHz response frequency. optoelectronic detector integrated circuit phase difference filtering noise optimization Electronics Nanjian Hou verfasserin aut Chao Wang verfasserin aut Yang Zhao verfasserin aut Kaixin Chen verfasserin aut Yaodan Chi verfasserin aut In Electronics MDPI AG, 2013 11(2022), 21, p 3486 (DE-627)718626478 (DE-600)2662127-7 20799292 nnns volume:11 year:2022 number:21, p 3486 https://doi.org/10.3390/electronics11213486 kostenfrei https://doaj.org/article/c12e20ff63614cdd81be8f1acf057bb3 kostenfrei https://www.mdpi.com/2079-9292/11/21/3486 kostenfrei https://doaj.org/toc/2079-9292 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2022 21, p 3486 |
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10.3390/electronics11213486 doi (DE-627)DOAJ083615903 (DE-599)DOAJc12e20ff63614cdd81be8f1acf057bb3 DE-627 ger DE-627 rakwb eng TK7800-8360 Yusong Mu verfasserin aut An Optoelectronic Detector with High Precision for Compact Grating Encoder Application 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper presents a novel optoelectronic detection array that adopts the research idea of optical, mechanical and electrical integration. Through the design of new detectors and ASIC, the mutual restriction between high accuracy and miniaturization of the grating encoder is solved. A simulation model of the “broken line” detector structure and process was established that only meets the needs of a compact array layout but also ensures a good photoelectric conversion rate. In addition, we used a professional design program to complete the layout of the ASIC, which maximized the recovery of the signal received by the detector. The simulation and noise analysis results show that the SNRs of the output signal are greater than 60 dB with a 400 kHz response frequency. optoelectronic detector integrated circuit phase difference filtering noise optimization Electronics Nanjian Hou verfasserin aut Chao Wang verfasserin aut Yang Zhao verfasserin aut Kaixin Chen verfasserin aut Yaodan Chi verfasserin aut In Electronics MDPI AG, 2013 11(2022), 21, p 3486 (DE-627)718626478 (DE-600)2662127-7 20799292 nnns volume:11 year:2022 number:21, p 3486 https://doi.org/10.3390/electronics11213486 kostenfrei https://doaj.org/article/c12e20ff63614cdd81be8f1acf057bb3 kostenfrei https://www.mdpi.com/2079-9292/11/21/3486 kostenfrei https://doaj.org/toc/2079-9292 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2022 21, p 3486 |
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An Optoelectronic Detector with High Precision for Compact Grating Encoder Application |
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This paper presents a novel optoelectronic detection array that adopts the research idea of optical, mechanical and electrical integration. Through the design of new detectors and ASIC, the mutual restriction between high accuracy and miniaturization of the grating encoder is solved. A simulation model of the “broken line” detector structure and process was established that only meets the needs of a compact array layout but also ensures a good photoelectric conversion rate. In addition, we used a professional design program to complete the layout of the ASIC, which maximized the recovery of the signal received by the detector. The simulation and noise analysis results show that the SNRs of the output signal are greater than 60 dB with a 400 kHz response frequency. |
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This paper presents a novel optoelectronic detection array that adopts the research idea of optical, mechanical and electrical integration. Through the design of new detectors and ASIC, the mutual restriction between high accuracy and miniaturization of the grating encoder is solved. A simulation model of the “broken line” detector structure and process was established that only meets the needs of a compact array layout but also ensures a good photoelectric conversion rate. In addition, we used a professional design program to complete the layout of the ASIC, which maximized the recovery of the signal received by the detector. The simulation and noise analysis results show that the SNRs of the output signal are greater than 60 dB with a 400 kHz response frequency. |
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This paper presents a novel optoelectronic detection array that adopts the research idea of optical, mechanical and electrical integration. Through the design of new detectors and ASIC, the mutual restriction between high accuracy and miniaturization of the grating encoder is solved. A simulation model of the “broken line” detector structure and process was established that only meets the needs of a compact array layout but also ensures a good photoelectric conversion rate. In addition, we used a professional design program to complete the layout of the ASIC, which maximized the recovery of the signal received by the detector. The simulation and noise analysis results show that the SNRs of the output signal are greater than 60 dB with a 400 kHz response frequency. |
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|
score |
7.401101 |