Indirect Band Gap in Scrolled MoS<sub<2</sub< Monolayers

MoS<sub<2</sub< nanoscrolls that have inner core radii of ∼250 nm are generated from MoS<sub<2</sub< monolayers, and the optical and transport band gaps of the nanoscrolls are investigated. Photoluminescence spectroscopy reveals that a MoS<sub<2</sub< monolayer, o...
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Autor*in:	Jeonghyeon Na [verfasserIn] Changyeon Park [verfasserIn] Chang Hoi Lee [verfasserIn] Won Ryeol Choi [verfasserIn] Sooho Choi [verfasserIn] Jae-Ung Lee [verfasserIn] Woochul Yang [verfasserIn] Hyeonsik Cheong [verfasserIn] Eleanor E. B. Campbell [verfasserIn] Sung Ho Jhang [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2022

Schlagwörter:	rolled structure 1D structure MoS scrolled MoS band gap ionic liquid gating

Übergeordnetes Werk:	In: Nanomaterials - MDPI AG, 2012, 12(2022), 19, p 3353
Übergeordnetes Werk:	volume:12 ; year:2022 ; number:19, p 3353

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/nano12193353

Katalog-ID:	DOAJ084021136

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spelling	10.3390/nano12193353 doi (DE-627)DOAJ084021136 (DE-599)DOAJd62c242e02bd4a81bd5b7a98537efbd4 DE-627 ger DE-627 rakwb eng QD1-999 Jeonghyeon Na verfasserin aut Indirect Band Gap in Scrolled MoS<sub<2</sub< Monolayers 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier MoS<sub<2</sub< nanoscrolls that have inner core radii of ∼250 nm are generated from MoS<sub<2</sub< monolayers, and the optical and transport band gaps of the nanoscrolls are investigated. Photoluminescence spectroscopy reveals that a MoS<sub<2</sub< monolayer, originally a direct gap semiconductor (∼1.85 eV (optical)), changes into an indirect gap semiconductor (∼1.6 eV) upon scrolling. The size of the indirect gap for the MoS<sub<2</sub< nanoscroll is larger than that of a MoS<sub<2</sub< bilayer (∼1.54 eV), implying a weaker interlayer interaction between concentric layers of the MoS<sub<2</sub< nanoscroll compared to Bernal-stacked MoS<sub<2</sub< few-layers. Transport measurements on MoS<sub<2</sub< nanoscrolls incorporated into ambipolar ionic-liquid-gated transistors yielded a band gap of ∼1.9 eV. The difference between the transport and optical gaps indicates an exciton binding energy of 0.3 eV for the MoS<sub<2</sub< nanoscrolls. The rolling up of 2D atomic layers into nanoscrolls introduces a new type of quasi-1D nanostructure and provides another way to modify the band gap of 2D materials. rolled structure 1D structure MoS<sub<2</sub< scrolled MoS<sub<2</sub< band gap ionic liquid gating Chemistry Changyeon Park verfasserin aut Chang Hoi Lee verfasserin aut Won Ryeol Choi verfasserin aut Sooho Choi verfasserin aut Jae-Ung Lee verfasserin aut Woochul Yang verfasserin aut Hyeonsik Cheong verfasserin aut Eleanor E. B. Campbell verfasserin aut Sung Ho Jhang verfasserin aut In Nanomaterials MDPI AG, 2012 12(2022), 19, p 3353 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:12 year:2022 number:19, p 3353 https://doi.org/10.3390/nano12193353 kostenfrei https://doaj.org/article/d62c242e02bd4a81bd5b7a98537efbd4 kostenfrei https://www.mdpi.com/2079-4991/12/19/3353 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2022 19, p 3353
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allfieldsSound	10.3390/nano12193353 doi (DE-627)DOAJ084021136 (DE-599)DOAJd62c242e02bd4a81bd5b7a98537efbd4 DE-627 ger DE-627 rakwb eng QD1-999 Jeonghyeon Na verfasserin aut Indirect Band Gap in Scrolled MoS<sub<2</sub< Monolayers 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier MoS<sub<2</sub< nanoscrolls that have inner core radii of ∼250 nm are generated from MoS<sub<2</sub< monolayers, and the optical and transport band gaps of the nanoscrolls are investigated. Photoluminescence spectroscopy reveals that a MoS<sub<2</sub< monolayer, originally a direct gap semiconductor (∼1.85 eV (optical)), changes into an indirect gap semiconductor (∼1.6 eV) upon scrolling. The size of the indirect gap for the MoS<sub<2</sub< nanoscroll is larger than that of a MoS<sub<2</sub< bilayer (∼1.54 eV), implying a weaker interlayer interaction between concentric layers of the MoS<sub<2</sub< nanoscroll compared to Bernal-stacked MoS<sub<2</sub< few-layers. Transport measurements on MoS<sub<2</sub< nanoscrolls incorporated into ambipolar ionic-liquid-gated transistors yielded a band gap of ∼1.9 eV. The difference between the transport and optical gaps indicates an exciton binding energy of 0.3 eV for the MoS<sub<2</sub< nanoscrolls. The rolling up of 2D atomic layers into nanoscrolls introduces a new type of quasi-1D nanostructure and provides another way to modify the band gap of 2D materials. rolled structure 1D structure MoS<sub<2</sub< scrolled MoS<sub<2</sub< band gap ionic liquid gating Chemistry Changyeon Park verfasserin aut Chang Hoi Lee verfasserin aut Won Ryeol Choi verfasserin aut Sooho Choi verfasserin aut Jae-Ung Lee verfasserin aut Woochul Yang verfasserin aut Hyeonsik Cheong verfasserin aut Eleanor E. B. Campbell verfasserin aut Sung Ho Jhang verfasserin aut In Nanomaterials MDPI AG, 2012 12(2022), 19, p 3353 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:12 year:2022 number:19, p 3353 https://doi.org/10.3390/nano12193353 kostenfrei https://doaj.org/article/d62c242e02bd4a81bd5b7a98537efbd4 kostenfrei https://www.mdpi.com/2079-4991/12/19/3353 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2022 19, p 3353
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callnumber-first	Q - Science
author	Jeonghyeon Na
spellingShingle	Jeonghyeon Na misc QD1-999 misc rolled structure misc 1D structure misc MoS<sub<2</sub< misc scrolled MoS<sub<2</sub< misc band gap misc ionic liquid gating misc Chemistry Indirect Band Gap in Scrolled MoS<sub<2</sub< Monolayers
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topic_title	QD1-999 Indirect Band Gap in Scrolled MoS<sub<2</sub< Monolayers rolled structure 1D structure MoS<sub<2</sub< scrolled MoS<sub<2</sub< band gap ionic liquid gating
topic	misc QD1-999 misc rolled structure misc 1D structure misc MoS<sub<2</sub< misc scrolled MoS<sub<2</sub< misc band gap misc ionic liquid gating misc Chemistry
topic_unstemmed	misc QD1-999 misc rolled structure misc 1D structure misc MoS<sub<2</sub< misc scrolled MoS<sub<2</sub< misc band gap misc ionic liquid gating misc Chemistry
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title	Indirect Band Gap in Scrolled MoS<sub<2</sub< Monolayers
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title_full	Indirect Band Gap in Scrolled MoS<sub<2</sub< Monolayers
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author_browse	Jeonghyeon Na Changyeon Park Chang Hoi Lee Won Ryeol Choi Sooho Choi Jae-Ung Lee Woochul Yang Hyeonsik Cheong Eleanor E. B. Campbell Sung Ho Jhang
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title_sort	indirect band gap in scrolled mos<sub<2</sub< monolayers
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title_auth	Indirect Band Gap in Scrolled MoS<sub<2</sub< Monolayers
abstract	MoS<sub<2</sub< nanoscrolls that have inner core radii of ∼250 nm are generated from MoS<sub<2</sub< monolayers, and the optical and transport band gaps of the nanoscrolls are investigated. Photoluminescence spectroscopy reveals that a MoS<sub<2</sub< monolayer, originally a direct gap semiconductor (∼1.85 eV (optical)), changes into an indirect gap semiconductor (∼1.6 eV) upon scrolling. The size of the indirect gap for the MoS<sub<2</sub< nanoscroll is larger than that of a MoS<sub<2</sub< bilayer (∼1.54 eV), implying a weaker interlayer interaction between concentric layers of the MoS<sub<2</sub< nanoscroll compared to Bernal-stacked MoS<sub<2</sub< few-layers. Transport measurements on MoS<sub<2</sub< nanoscrolls incorporated into ambipolar ionic-liquid-gated transistors yielded a band gap of ∼1.9 eV. The difference between the transport and optical gaps indicates an exciton binding energy of 0.3 eV for the MoS<sub<2</sub< nanoscrolls. The rolling up of 2D atomic layers into nanoscrolls introduces a new type of quasi-1D nanostructure and provides another way to modify the band gap of 2D materials.
abstractGer	MoS<sub<2</sub< nanoscrolls that have inner core radii of ∼250 nm are generated from MoS<sub<2</sub< monolayers, and the optical and transport band gaps of the nanoscrolls are investigated. Photoluminescence spectroscopy reveals that a MoS<sub<2</sub< monolayer, originally a direct gap semiconductor (∼1.85 eV (optical)), changes into an indirect gap semiconductor (∼1.6 eV) upon scrolling. The size of the indirect gap for the MoS<sub<2</sub< nanoscroll is larger than that of a MoS<sub<2</sub< bilayer (∼1.54 eV), implying a weaker interlayer interaction between concentric layers of the MoS<sub<2</sub< nanoscroll compared to Bernal-stacked MoS<sub<2</sub< few-layers. Transport measurements on MoS<sub<2</sub< nanoscrolls incorporated into ambipolar ionic-liquid-gated transistors yielded a band gap of ∼1.9 eV. The difference between the transport and optical gaps indicates an exciton binding energy of 0.3 eV for the MoS<sub<2</sub< nanoscrolls. The rolling up of 2D atomic layers into nanoscrolls introduces a new type of quasi-1D nanostructure and provides another way to modify the band gap of 2D materials.
abstract_unstemmed	MoS<sub<2</sub< nanoscrolls that have inner core radii of ∼250 nm are generated from MoS<sub<2</sub< monolayers, and the optical and transport band gaps of the nanoscrolls are investigated. Photoluminescence spectroscopy reveals that a MoS<sub<2</sub< monolayer, originally a direct gap semiconductor (∼1.85 eV (optical)), changes into an indirect gap semiconductor (∼1.6 eV) upon scrolling. The size of the indirect gap for the MoS<sub<2</sub< nanoscroll is larger than that of a MoS<sub<2</sub< bilayer (∼1.54 eV), implying a weaker interlayer interaction between concentric layers of the MoS<sub<2</sub< nanoscroll compared to Bernal-stacked MoS<sub<2</sub< few-layers. Transport measurements on MoS<sub<2</sub< nanoscrolls incorporated into ambipolar ionic-liquid-gated transistors yielded a band gap of ∼1.9 eV. The difference between the transport and optical gaps indicates an exciton binding energy of 0.3 eV for the MoS<sub<2</sub< nanoscrolls. The rolling up of 2D atomic layers into nanoscrolls introduces a new type of quasi-1D nanostructure and provides another way to modify the band gap of 2D materials.
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container_issue	19, p 3353
title_short	Indirect Band Gap in Scrolled MoS<sub<2</sub< Monolayers
url	https://doi.org/10.3390/nano12193353 https://doaj.org/article/d62c242e02bd4a81bd5b7a98537efbd4 https://www.mdpi.com/2079-4991/12/19/3353 https://doaj.org/toc/2079-4991
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author2	Changyeon Park Chang Hoi Lee Won Ryeol Choi Sooho Choi Jae-Ung Lee Woochul Yang Hyeonsik Cheong Eleanor E. B. Campbell Sung Ho Jhang
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up_date	2024-07-03T20:43:10.566Z
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Indirect Band Gap in Scrolled MoS<sub<2</sub< Monolayers

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