Indirect Band Gap in Scrolled MoS<sub<2</sub< Monolayers
MoS<sub<2</sub< nanoscrolls that have inner core radii of ∼250 nm are generated from MoS<sub<2</sub< monolayers, and the optical and transport band gaps of the nanoscrolls are investigated. Photoluminescence spectroscopy reveals that a MoS<sub<2</sub< monolayer, o...
Ausführliche Beschreibung
Autor*in: |
Jeonghyeon Na [verfasserIn] Changyeon Park [verfasserIn] Chang Hoi Lee [verfasserIn] Won Ryeol Choi [verfasserIn] Sooho Choi [verfasserIn] Jae-Ung Lee [verfasserIn] Woochul Yang [verfasserIn] Hyeonsik Cheong [verfasserIn] Eleanor E. B. Campbell [verfasserIn] Sung Ho Jhang [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2022 |
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Übergeordnetes Werk: |
In: Nanomaterials - MDPI AG, 2012, 12(2022), 19, p 3353 |
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Übergeordnetes Werk: |
volume:12 ; year:2022 ; number:19, p 3353 |
Links: |
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DOI / URN: |
10.3390/nano12193353 |
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Katalog-ID: |
DOAJ084021136 |
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10.3390/nano12193353 doi (DE-627)DOAJ084021136 (DE-599)DOAJd62c242e02bd4a81bd5b7a98537efbd4 DE-627 ger DE-627 rakwb eng QD1-999 Jeonghyeon Na verfasserin aut Indirect Band Gap in Scrolled MoS<sub<2</sub< Monolayers 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier MoS<sub<2</sub< nanoscrolls that have inner core radii of ∼250 nm are generated from MoS<sub<2</sub< monolayers, and the optical and transport band gaps of the nanoscrolls are investigated. Photoluminescence spectroscopy reveals that a MoS<sub<2</sub< monolayer, originally a direct gap semiconductor (∼1.85 eV (optical)), changes into an indirect gap semiconductor (∼1.6 eV) upon scrolling. The size of the indirect gap for the MoS<sub<2</sub< nanoscroll is larger than that of a MoS<sub<2</sub< bilayer (∼1.54 eV), implying a weaker interlayer interaction between concentric layers of the MoS<sub<2</sub< nanoscroll compared to Bernal-stacked MoS<sub<2</sub< few-layers. Transport measurements on MoS<sub<2</sub< nanoscrolls incorporated into ambipolar ionic-liquid-gated transistors yielded a band gap of ∼1.9 eV. The difference between the transport and optical gaps indicates an exciton binding energy of 0.3 eV for the MoS<sub<2</sub< nanoscrolls. The rolling up of 2D atomic layers into nanoscrolls introduces a new type of quasi-1D nanostructure and provides another way to modify the band gap of 2D materials. rolled structure 1D structure MoS<sub<2</sub< scrolled MoS<sub<2</sub< band gap ionic liquid gating Chemistry Changyeon Park verfasserin aut Chang Hoi Lee verfasserin aut Won Ryeol Choi verfasserin aut Sooho Choi verfasserin aut Jae-Ung Lee verfasserin aut Woochul Yang verfasserin aut Hyeonsik Cheong verfasserin aut Eleanor E. B. Campbell verfasserin aut Sung Ho Jhang verfasserin aut In Nanomaterials MDPI AG, 2012 12(2022), 19, p 3353 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:12 year:2022 number:19, p 3353 https://doi.org/10.3390/nano12193353 kostenfrei https://doaj.org/article/d62c242e02bd4a81bd5b7a98537efbd4 kostenfrei https://www.mdpi.com/2079-4991/12/19/3353 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2022 19, p 3353 |
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10.3390/nano12193353 doi (DE-627)DOAJ084021136 (DE-599)DOAJd62c242e02bd4a81bd5b7a98537efbd4 DE-627 ger DE-627 rakwb eng QD1-999 Jeonghyeon Na verfasserin aut Indirect Band Gap in Scrolled MoS<sub<2</sub< Monolayers 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier MoS<sub<2</sub< nanoscrolls that have inner core radii of ∼250 nm are generated from MoS<sub<2</sub< monolayers, and the optical and transport band gaps of the nanoscrolls are investigated. Photoluminescence spectroscopy reveals that a MoS<sub<2</sub< monolayer, originally a direct gap semiconductor (∼1.85 eV (optical)), changes into an indirect gap semiconductor (∼1.6 eV) upon scrolling. The size of the indirect gap for the MoS<sub<2</sub< nanoscroll is larger than that of a MoS<sub<2</sub< bilayer (∼1.54 eV), implying a weaker interlayer interaction between concentric layers of the MoS<sub<2</sub< nanoscroll compared to Bernal-stacked MoS<sub<2</sub< few-layers. Transport measurements on MoS<sub<2</sub< nanoscrolls incorporated into ambipolar ionic-liquid-gated transistors yielded a band gap of ∼1.9 eV. The difference between the transport and optical gaps indicates an exciton binding energy of 0.3 eV for the MoS<sub<2</sub< nanoscrolls. The rolling up of 2D atomic layers into nanoscrolls introduces a new type of quasi-1D nanostructure and provides another way to modify the band gap of 2D materials. rolled structure 1D structure MoS<sub<2</sub< scrolled MoS<sub<2</sub< band gap ionic liquid gating Chemistry Changyeon Park verfasserin aut Chang Hoi Lee verfasserin aut Won Ryeol Choi verfasserin aut Sooho Choi verfasserin aut Jae-Ung Lee verfasserin aut Woochul Yang verfasserin aut Hyeonsik Cheong verfasserin aut Eleanor E. B. Campbell verfasserin aut Sung Ho Jhang verfasserin aut In Nanomaterials MDPI AG, 2012 12(2022), 19, p 3353 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:12 year:2022 number:19, p 3353 https://doi.org/10.3390/nano12193353 kostenfrei https://doaj.org/article/d62c242e02bd4a81bd5b7a98537efbd4 kostenfrei https://www.mdpi.com/2079-4991/12/19/3353 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2022 19, p 3353 |
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10.3390/nano12193353 doi (DE-627)DOAJ084021136 (DE-599)DOAJd62c242e02bd4a81bd5b7a98537efbd4 DE-627 ger DE-627 rakwb eng QD1-999 Jeonghyeon Na verfasserin aut Indirect Band Gap in Scrolled MoS<sub<2</sub< Monolayers 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier MoS<sub<2</sub< nanoscrolls that have inner core radii of ∼250 nm are generated from MoS<sub<2</sub< monolayers, and the optical and transport band gaps of the nanoscrolls are investigated. Photoluminescence spectroscopy reveals that a MoS<sub<2</sub< monolayer, originally a direct gap semiconductor (∼1.85 eV (optical)), changes into an indirect gap semiconductor (∼1.6 eV) upon scrolling. The size of the indirect gap for the MoS<sub<2</sub< nanoscroll is larger than that of a MoS<sub<2</sub< bilayer (∼1.54 eV), implying a weaker interlayer interaction between concentric layers of the MoS<sub<2</sub< nanoscroll compared to Bernal-stacked MoS<sub<2</sub< few-layers. Transport measurements on MoS<sub<2</sub< nanoscrolls incorporated into ambipolar ionic-liquid-gated transistors yielded a band gap of ∼1.9 eV. The difference between the transport and optical gaps indicates an exciton binding energy of 0.3 eV for the MoS<sub<2</sub< nanoscrolls. The rolling up of 2D atomic layers into nanoscrolls introduces a new type of quasi-1D nanostructure and provides another way to modify the band gap of 2D materials. rolled structure 1D structure MoS<sub<2</sub< scrolled MoS<sub<2</sub< band gap ionic liquid gating Chemistry Changyeon Park verfasserin aut Chang Hoi Lee verfasserin aut Won Ryeol Choi verfasserin aut Sooho Choi verfasserin aut Jae-Ung Lee verfasserin aut Woochul Yang verfasserin aut Hyeonsik Cheong verfasserin aut Eleanor E. B. Campbell verfasserin aut Sung Ho Jhang verfasserin aut In Nanomaterials MDPI AG, 2012 12(2022), 19, p 3353 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:12 year:2022 number:19, p 3353 https://doi.org/10.3390/nano12193353 kostenfrei https://doaj.org/article/d62c242e02bd4a81bd5b7a98537efbd4 kostenfrei https://www.mdpi.com/2079-4991/12/19/3353 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2022 19, p 3353 |
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10.3390/nano12193353 doi (DE-627)DOAJ084021136 (DE-599)DOAJd62c242e02bd4a81bd5b7a98537efbd4 DE-627 ger DE-627 rakwb eng QD1-999 Jeonghyeon Na verfasserin aut Indirect Band Gap in Scrolled MoS<sub<2</sub< Monolayers 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier MoS<sub<2</sub< nanoscrolls that have inner core radii of ∼250 nm are generated from MoS<sub<2</sub< monolayers, and the optical and transport band gaps of the nanoscrolls are investigated. Photoluminescence spectroscopy reveals that a MoS<sub<2</sub< monolayer, originally a direct gap semiconductor (∼1.85 eV (optical)), changes into an indirect gap semiconductor (∼1.6 eV) upon scrolling. The size of the indirect gap for the MoS<sub<2</sub< nanoscroll is larger than that of a MoS<sub<2</sub< bilayer (∼1.54 eV), implying a weaker interlayer interaction between concentric layers of the MoS<sub<2</sub< nanoscroll compared to Bernal-stacked MoS<sub<2</sub< few-layers. Transport measurements on MoS<sub<2</sub< nanoscrolls incorporated into ambipolar ionic-liquid-gated transistors yielded a band gap of ∼1.9 eV. The difference between the transport and optical gaps indicates an exciton binding energy of 0.3 eV for the MoS<sub<2</sub< nanoscrolls. The rolling up of 2D atomic layers into nanoscrolls introduces a new type of quasi-1D nanostructure and provides another way to modify the band gap of 2D materials. rolled structure 1D structure MoS<sub<2</sub< scrolled MoS<sub<2</sub< band gap ionic liquid gating Chemistry Changyeon Park verfasserin aut Chang Hoi Lee verfasserin aut Won Ryeol Choi verfasserin aut Sooho Choi verfasserin aut Jae-Ung Lee verfasserin aut Woochul Yang verfasserin aut Hyeonsik Cheong verfasserin aut Eleanor E. B. Campbell verfasserin aut Sung Ho Jhang verfasserin aut In Nanomaterials MDPI AG, 2012 12(2022), 19, p 3353 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:12 year:2022 number:19, p 3353 https://doi.org/10.3390/nano12193353 kostenfrei https://doaj.org/article/d62c242e02bd4a81bd5b7a98537efbd4 kostenfrei https://www.mdpi.com/2079-4991/12/19/3353 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2022 19, p 3353 |
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10.3390/nano12193353 doi (DE-627)DOAJ084021136 (DE-599)DOAJd62c242e02bd4a81bd5b7a98537efbd4 DE-627 ger DE-627 rakwb eng QD1-999 Jeonghyeon Na verfasserin aut Indirect Band Gap in Scrolled MoS<sub<2</sub< Monolayers 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier MoS<sub<2</sub< nanoscrolls that have inner core radii of ∼250 nm are generated from MoS<sub<2</sub< monolayers, and the optical and transport band gaps of the nanoscrolls are investigated. Photoluminescence spectroscopy reveals that a MoS<sub<2</sub< monolayer, originally a direct gap semiconductor (∼1.85 eV (optical)), changes into an indirect gap semiconductor (∼1.6 eV) upon scrolling. The size of the indirect gap for the MoS<sub<2</sub< nanoscroll is larger than that of a MoS<sub<2</sub< bilayer (∼1.54 eV), implying a weaker interlayer interaction between concentric layers of the MoS<sub<2</sub< nanoscroll compared to Bernal-stacked MoS<sub<2</sub< few-layers. Transport measurements on MoS<sub<2</sub< nanoscrolls incorporated into ambipolar ionic-liquid-gated transistors yielded a band gap of ∼1.9 eV. The difference between the transport and optical gaps indicates an exciton binding energy of 0.3 eV for the MoS<sub<2</sub< nanoscrolls. The rolling up of 2D atomic layers into nanoscrolls introduces a new type of quasi-1D nanostructure and provides another way to modify the band gap of 2D materials. rolled structure 1D structure MoS<sub<2</sub< scrolled MoS<sub<2</sub< band gap ionic liquid gating Chemistry Changyeon Park verfasserin aut Chang Hoi Lee verfasserin aut Won Ryeol Choi verfasserin aut Sooho Choi verfasserin aut Jae-Ung Lee verfasserin aut Woochul Yang verfasserin aut Hyeonsik Cheong verfasserin aut Eleanor E. B. Campbell verfasserin aut Sung Ho Jhang verfasserin aut In Nanomaterials MDPI AG, 2012 12(2022), 19, p 3353 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:12 year:2022 number:19, p 3353 https://doi.org/10.3390/nano12193353 kostenfrei https://doaj.org/article/d62c242e02bd4a81bd5b7a98537efbd4 kostenfrei https://www.mdpi.com/2079-4991/12/19/3353 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2022 19, p 3353 |
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Indirect Band Gap in Scrolled MoS<sub<2</sub< Monolayers |
abstract |
MoS<sub<2</sub< nanoscrolls that have inner core radii of ∼250 nm are generated from MoS<sub<2</sub< monolayers, and the optical and transport band gaps of the nanoscrolls are investigated. Photoluminescence spectroscopy reveals that a MoS<sub<2</sub< monolayer, originally a direct gap semiconductor (∼1.85 eV (optical)), changes into an indirect gap semiconductor (∼1.6 eV) upon scrolling. The size of the indirect gap for the MoS<sub<2</sub< nanoscroll is larger than that of a MoS<sub<2</sub< bilayer (∼1.54 eV), implying a weaker interlayer interaction between concentric layers of the MoS<sub<2</sub< nanoscroll compared to Bernal-stacked MoS<sub<2</sub< few-layers. Transport measurements on MoS<sub<2</sub< nanoscrolls incorporated into ambipolar ionic-liquid-gated transistors yielded a band gap of ∼1.9 eV. The difference between the transport and optical gaps indicates an exciton binding energy of 0.3 eV for the MoS<sub<2</sub< nanoscrolls. The rolling up of 2D atomic layers into nanoscrolls introduces a new type of quasi-1D nanostructure and provides another way to modify the band gap of 2D materials. |
abstractGer |
MoS<sub<2</sub< nanoscrolls that have inner core radii of ∼250 nm are generated from MoS<sub<2</sub< monolayers, and the optical and transport band gaps of the nanoscrolls are investigated. Photoluminescence spectroscopy reveals that a MoS<sub<2</sub< monolayer, originally a direct gap semiconductor (∼1.85 eV (optical)), changes into an indirect gap semiconductor (∼1.6 eV) upon scrolling. The size of the indirect gap for the MoS<sub<2</sub< nanoscroll is larger than that of a MoS<sub<2</sub< bilayer (∼1.54 eV), implying a weaker interlayer interaction between concentric layers of the MoS<sub<2</sub< nanoscroll compared to Bernal-stacked MoS<sub<2</sub< few-layers. Transport measurements on MoS<sub<2</sub< nanoscrolls incorporated into ambipolar ionic-liquid-gated transistors yielded a band gap of ∼1.9 eV. The difference between the transport and optical gaps indicates an exciton binding energy of 0.3 eV for the MoS<sub<2</sub< nanoscrolls. The rolling up of 2D atomic layers into nanoscrolls introduces a new type of quasi-1D nanostructure and provides another way to modify the band gap of 2D materials. |
abstract_unstemmed |
MoS<sub<2</sub< nanoscrolls that have inner core radii of ∼250 nm are generated from MoS<sub<2</sub< monolayers, and the optical and transport band gaps of the nanoscrolls are investigated. Photoluminescence spectroscopy reveals that a MoS<sub<2</sub< monolayer, originally a direct gap semiconductor (∼1.85 eV (optical)), changes into an indirect gap semiconductor (∼1.6 eV) upon scrolling. The size of the indirect gap for the MoS<sub<2</sub< nanoscroll is larger than that of a MoS<sub<2</sub< bilayer (∼1.54 eV), implying a weaker interlayer interaction between concentric layers of the MoS<sub<2</sub< nanoscroll compared to Bernal-stacked MoS<sub<2</sub< few-layers. Transport measurements on MoS<sub<2</sub< nanoscrolls incorporated into ambipolar ionic-liquid-gated transistors yielded a band gap of ∼1.9 eV. The difference between the transport and optical gaps indicates an exciton binding energy of 0.3 eV for the MoS<sub<2</sub< nanoscrolls. The rolling up of 2D atomic layers into nanoscrolls introduces a new type of quasi-1D nanostructure and provides another way to modify the band gap of 2D materials. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ084021136</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20240414183733.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230311s2022 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.3390/nano12193353</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ084021136</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJd62c242e02bd4a81bd5b7a98537efbd4</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QD1-999</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Jeonghyeon Na</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Indirect Band Gap in Scrolled MoS<sub<2</sub< Monolayers</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2022</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">MoS<sub<2</sub< nanoscrolls that have inner core radii of ∼250 nm are generated from MoS<sub<2</sub< monolayers, and the optical and transport band gaps of the nanoscrolls are investigated. 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