New Compounds with [As7]3– Clusters: Synthesis and Crystal Structures of the Zintl Phases Cs2NaAs7, Cs4ZnAs14 and Cs4CdAs14
Three new cluster compounds, Cs2NaAs7, Cs4ZnAs14, and Cs4CdAs14 were obtained from high temperature reactions. Their structures feature heptaarsenide [As7]3– anions, where the clusters in Cs4ZnAs14 and Cs4CdAs14 are dimerized by the linkers Zn and Cd, respectively. The bonding characteristics of the...
Ausführliche Beschreibung
Autor*in: |
Hua He [verfasserIn] Chauntae Tyson [verfasserIn] Svilen Bobev [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch |
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2011 |
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In: Crystals - MDPI AG, 2011, 1(2011), 3, Seite 87-98 |
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Übergeordnetes Werk: |
volume:1 ; year:2011 ; number:3 ; pages:87-98 |
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DOI / URN: |
10.3390/cryst1030087 |
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Katalog-ID: |
DOAJ084620811 |
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10.3390/cryst1030087 doi (DE-627)DOAJ084620811 (DE-599)DOAJbc875bdf2f894f4580c9bceabe8a8771 DE-627 ger DE-627 rakwb eng QD901-999 Hua He verfasserin aut New Compounds with [As7]3– Clusters: Synthesis and Crystal Structures of the Zintl Phases Cs2NaAs7, Cs4ZnAs14 and Cs4CdAs14 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Three new cluster compounds, Cs2NaAs7, Cs4ZnAs14, and Cs4CdAs14 were obtained from high temperature reactions. Their structures feature heptaarsenide [As7]3– anions, where the clusters in Cs4ZnAs14 and Cs4CdAs14 are dimerized by the linkers Zn and Cd, respectively. The bonding characteristics of these clusters are discussed and compared. Band structure calculation on Cs2NaAs7 suggests that this compound is a semiconductor with an energy gap of circa 1.6 eV, which is in consistent with the dark red color of the crystals. cluster arsenic Zintl compound crystal structure Crystallography Chauntae Tyson verfasserin aut Svilen Bobev verfasserin aut In Crystals MDPI AG, 2011 1(2011), 3, Seite 87-98 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:1 year:2011 number:3 pages:87-98 https://doi.org/10.3390/cryst1030087 kostenfrei https://doaj.org/article/bc875bdf2f894f4580c9bceabe8a8771 kostenfrei http://www.mdpi.com/2073-4352/1/3/87 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 1 2011 3 87-98 |
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10.3390/cryst1030087 doi (DE-627)DOAJ084620811 (DE-599)DOAJbc875bdf2f894f4580c9bceabe8a8771 DE-627 ger DE-627 rakwb eng QD901-999 Hua He verfasserin aut New Compounds with [As7]3– Clusters: Synthesis and Crystal Structures of the Zintl Phases Cs2NaAs7, Cs4ZnAs14 and Cs4CdAs14 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Three new cluster compounds, Cs2NaAs7, Cs4ZnAs14, and Cs4CdAs14 were obtained from high temperature reactions. Their structures feature heptaarsenide [As7]3– anions, where the clusters in Cs4ZnAs14 and Cs4CdAs14 are dimerized by the linkers Zn and Cd, respectively. The bonding characteristics of these clusters are discussed and compared. Band structure calculation on Cs2NaAs7 suggests that this compound is a semiconductor with an energy gap of circa 1.6 eV, which is in consistent with the dark red color of the crystals. cluster arsenic Zintl compound crystal structure Crystallography Chauntae Tyson verfasserin aut Svilen Bobev verfasserin aut In Crystals MDPI AG, 2011 1(2011), 3, Seite 87-98 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:1 year:2011 number:3 pages:87-98 https://doi.org/10.3390/cryst1030087 kostenfrei https://doaj.org/article/bc875bdf2f894f4580c9bceabe8a8771 kostenfrei http://www.mdpi.com/2073-4352/1/3/87 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 1 2011 3 87-98 |
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10.3390/cryst1030087 doi (DE-627)DOAJ084620811 (DE-599)DOAJbc875bdf2f894f4580c9bceabe8a8771 DE-627 ger DE-627 rakwb eng QD901-999 Hua He verfasserin aut New Compounds with [As7]3– Clusters: Synthesis and Crystal Structures of the Zintl Phases Cs2NaAs7, Cs4ZnAs14 and Cs4CdAs14 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Three new cluster compounds, Cs2NaAs7, Cs4ZnAs14, and Cs4CdAs14 were obtained from high temperature reactions. Their structures feature heptaarsenide [As7]3– anions, where the clusters in Cs4ZnAs14 and Cs4CdAs14 are dimerized by the linkers Zn and Cd, respectively. The bonding characteristics of these clusters are discussed and compared. Band structure calculation on Cs2NaAs7 suggests that this compound is a semiconductor with an energy gap of circa 1.6 eV, which is in consistent with the dark red color of the crystals. cluster arsenic Zintl compound crystal structure Crystallography Chauntae Tyson verfasserin aut Svilen Bobev verfasserin aut In Crystals MDPI AG, 2011 1(2011), 3, Seite 87-98 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:1 year:2011 number:3 pages:87-98 https://doi.org/10.3390/cryst1030087 kostenfrei https://doaj.org/article/bc875bdf2f894f4580c9bceabe8a8771 kostenfrei http://www.mdpi.com/2073-4352/1/3/87 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 1 2011 3 87-98 |
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10.3390/cryst1030087 doi (DE-627)DOAJ084620811 (DE-599)DOAJbc875bdf2f894f4580c9bceabe8a8771 DE-627 ger DE-627 rakwb eng QD901-999 Hua He verfasserin aut New Compounds with [As7]3– Clusters: Synthesis and Crystal Structures of the Zintl Phases Cs2NaAs7, Cs4ZnAs14 and Cs4CdAs14 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Three new cluster compounds, Cs2NaAs7, Cs4ZnAs14, and Cs4CdAs14 were obtained from high temperature reactions. Their structures feature heptaarsenide [As7]3– anions, where the clusters in Cs4ZnAs14 and Cs4CdAs14 are dimerized by the linkers Zn and Cd, respectively. The bonding characteristics of these clusters are discussed and compared. Band structure calculation on Cs2NaAs7 suggests that this compound is a semiconductor with an energy gap of circa 1.6 eV, which is in consistent with the dark red color of the crystals. cluster arsenic Zintl compound crystal structure Crystallography Chauntae Tyson verfasserin aut Svilen Bobev verfasserin aut In Crystals MDPI AG, 2011 1(2011), 3, Seite 87-98 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:1 year:2011 number:3 pages:87-98 https://doi.org/10.3390/cryst1030087 kostenfrei https://doaj.org/article/bc875bdf2f894f4580c9bceabe8a8771 kostenfrei http://www.mdpi.com/2073-4352/1/3/87 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 1 2011 3 87-98 |
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10.3390/cryst1030087 doi (DE-627)DOAJ084620811 (DE-599)DOAJbc875bdf2f894f4580c9bceabe8a8771 DE-627 ger DE-627 rakwb eng QD901-999 Hua He verfasserin aut New Compounds with [As7]3– Clusters: Synthesis and Crystal Structures of the Zintl Phases Cs2NaAs7, Cs4ZnAs14 and Cs4CdAs14 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Three new cluster compounds, Cs2NaAs7, Cs4ZnAs14, and Cs4CdAs14 were obtained from high temperature reactions. Their structures feature heptaarsenide [As7]3– anions, where the clusters in Cs4ZnAs14 and Cs4CdAs14 are dimerized by the linkers Zn and Cd, respectively. The bonding characteristics of these clusters are discussed and compared. Band structure calculation on Cs2NaAs7 suggests that this compound is a semiconductor with an energy gap of circa 1.6 eV, which is in consistent with the dark red color of the crystals. cluster arsenic Zintl compound crystal structure Crystallography Chauntae Tyson verfasserin aut Svilen Bobev verfasserin aut In Crystals MDPI AG, 2011 1(2011), 3, Seite 87-98 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:1 year:2011 number:3 pages:87-98 https://doi.org/10.3390/cryst1030087 kostenfrei https://doaj.org/article/bc875bdf2f894f4580c9bceabe8a8771 kostenfrei http://www.mdpi.com/2073-4352/1/3/87 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 1 2011 3 87-98 |
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Hua He misc QD901-999 misc cluster misc arsenic misc Zintl compound misc crystal structure misc Crystallography New Compounds with [As7]3– Clusters: Synthesis and Crystal Structures of the Zintl Phases Cs2NaAs7, Cs4ZnAs14 and Cs4CdAs14 |
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QD901-999 New Compounds with [As7]3– Clusters: Synthesis and Crystal Structures of the Zintl Phases Cs2NaAs7, Cs4ZnAs14 and Cs4CdAs14 cluster arsenic Zintl compound crystal structure |
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New Compounds with [As7]3– Clusters: Synthesis and Crystal Structures of the Zintl Phases Cs2NaAs7, Cs4ZnAs14 and Cs4CdAs14 |
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Three new cluster compounds, Cs2NaAs7, Cs4ZnAs14, and Cs4CdAs14 were obtained from high temperature reactions. Their structures feature heptaarsenide [As7]3– anions, where the clusters in Cs4ZnAs14 and Cs4CdAs14 are dimerized by the linkers Zn and Cd, respectively. The bonding characteristics of these clusters are discussed and compared. Band structure calculation on Cs2NaAs7 suggests that this compound is a semiconductor with an energy gap of circa 1.6 eV, which is in consistent with the dark red color of the crystals. |
abstractGer |
Three new cluster compounds, Cs2NaAs7, Cs4ZnAs14, and Cs4CdAs14 were obtained from high temperature reactions. Their structures feature heptaarsenide [As7]3– anions, where the clusters in Cs4ZnAs14 and Cs4CdAs14 are dimerized by the linkers Zn and Cd, respectively. The bonding characteristics of these clusters are discussed and compared. Band structure calculation on Cs2NaAs7 suggests that this compound is a semiconductor with an energy gap of circa 1.6 eV, which is in consistent with the dark red color of the crystals. |
abstract_unstemmed |
Three new cluster compounds, Cs2NaAs7, Cs4ZnAs14, and Cs4CdAs14 were obtained from high temperature reactions. Their structures feature heptaarsenide [As7]3– anions, where the clusters in Cs4ZnAs14 and Cs4CdAs14 are dimerized by the linkers Zn and Cd, respectively. The bonding characteristics of these clusters are discussed and compared. Band structure calculation on Cs2NaAs7 suggests that this compound is a semiconductor with an energy gap of circa 1.6 eV, which is in consistent with the dark red color of the crystals. |
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New Compounds with [As7]3– Clusters: Synthesis and Crystal Structures of the Zintl Phases Cs2NaAs7, Cs4ZnAs14 and Cs4CdAs14 |
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