A 5 V-to-32 V Input PVT-Robust Charge-Pump Circuit with Adjustable Output in a 0.18 μm BCD Process

In this paper, a new closed-loop charge-pump circuit with adjustable output voltage and an on-chip compensation technique is proposed. The environmental temperature and process corner can be detected with an on-chip detection circuit and automatically feedback an adjusted reference voltage. With thi...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Xinyi Ma [verfasserIn] Liangkun Wang [verfasserIn] Jiaqing Yu [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2022

Schlagwörter:	closed-loop charge pump PVT robust PWM modulation process corner detection

Übergeordnetes Werk:	In: Electronics - MDPI AG, 2013, 11(2022), 18, p 2828
Übergeordnetes Werk:	volume:11 ; year:2022 ; number:18, p 2828

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/electronics11182828

Katalog-ID:	DOAJ084818964

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520			\|a In this paper, a new closed-loop charge-pump circuit with adjustable output voltage and an on-chip compensation technique is proposed. The environmental temperature and process corner can be detected with an on-chip detection circuit and automatically feedback an adjusted reference voltage. With this, the magnitude of the charge-pump output voltage with Pulse-Width Modulation (PWM) can be compensated. The charge-pump circuit is designed and verified with a 180 nm Bipolar-CMOS-DMOS (BCD) process, and its output voltage at different process, voltage, and temperature (PVT) is controllable with low ripple. There are three selections for adjusting the output voltage: +5 V/+7 V/+10 V shifts, with the supply voltage ranging from 5 V to 32 V. It can remain tunable and stable at any shifts. The maximum deviation is ±0.265%, and the maximum load current can reach 30 mA. The ripple voltage is less than 0.3% (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mo<Δ</mo<</semantics<</math<</inline-formula< Vripple/Vout) underthe maximum load. The Monte Carlo simulation results show that the worst case of the process sensitivity (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<σ</mi<<mo</</mo<<mi<μ</mi<</mrow<</semantics<</math<</inline-formula<) is 0.1%. The charge-pump core area is 0.308 mm<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msup<<mrow<</mrow<<mn<2</mn<</msup<</semantics<</math<</inline-formula<, and the power consumption is 4.753 mW. The circuit can produce high-precision output and is suitable for high-side driving IC applications.
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allfields	10.3390/electronics11182828 doi (DE-627)DOAJ084818964 (DE-599)DOAJ63bafee05459471ba899ebcde0368f07 DE-627 ger DE-627 rakwb eng TK7800-8360 Xinyi Ma verfasserin aut A 5 V-to-32 V Input PVT-Robust Charge-Pump Circuit with Adjustable Output in a 0.18 μm BCD Process 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, a new closed-loop charge-pump circuit with adjustable output voltage and an on-chip compensation technique is proposed. The environmental temperature and process corner can be detected with an on-chip detection circuit and automatically feedback an adjusted reference voltage. With this, the magnitude of the charge-pump output voltage with Pulse-Width Modulation (PWM) can be compensated. The charge-pump circuit is designed and verified with a 180 nm Bipolar-CMOS-DMOS (BCD) process, and its output voltage at different process, voltage, and temperature (PVT) is controllable with low ripple. There are three selections for adjusting the output voltage: +5 V/+7 V/+10 V shifts, with the supply voltage ranging from 5 V to 32 V. It can remain tunable and stable at any shifts. The maximum deviation is ±0.265%, and the maximum load current can reach 30 mA. The ripple voltage is less than 0.3% (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mo<Δ</mo<</semantics<</math<</inline-formula< Vripple/Vout) underthe maximum load. The Monte Carlo simulation results show that the worst case of the process sensitivity (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<σ</mi<<mo</</mo<<mi<μ</mi<</mrow<</semantics<</math<</inline-formula<) is 0.1%. The charge-pump core area is 0.308 mm<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msup<<mrow<</mrow<<mn<2</mn<</msup<</semantics<</math<</inline-formula<, and the power consumption is 4.753 mW. The circuit can produce high-precision output and is suitable for high-side driving IC applications. closed-loop charge pump PVT robust PWM modulation process corner detection Electronics Liangkun Wang verfasserin aut Jiaqing Yu verfasserin aut In Electronics MDPI AG, 2013 11(2022), 18, p 2828 (DE-627)718626478 (DE-600)2662127-7 20799292 nnns volume:11 year:2022 number:18, p 2828 https://doi.org/10.3390/electronics11182828 kostenfrei https://doaj.org/article/63bafee05459471ba899ebcde0368f07 kostenfrei https://www.mdpi.com/2079-9292/11/18/2828 kostenfrei https://doaj.org/toc/2079-9292 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2022 18, p 2828
spelling	10.3390/electronics11182828 doi (DE-627)DOAJ084818964 (DE-599)DOAJ63bafee05459471ba899ebcde0368f07 DE-627 ger DE-627 rakwb eng TK7800-8360 Xinyi Ma verfasserin aut A 5 V-to-32 V Input PVT-Robust Charge-Pump Circuit with Adjustable Output in a 0.18 μm BCD Process 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, a new closed-loop charge-pump circuit with adjustable output voltage and an on-chip compensation technique is proposed. The environmental temperature and process corner can be detected with an on-chip detection circuit and automatically feedback an adjusted reference voltage. With this, the magnitude of the charge-pump output voltage with Pulse-Width Modulation (PWM) can be compensated. The charge-pump circuit is designed and verified with a 180 nm Bipolar-CMOS-DMOS (BCD) process, and its output voltage at different process, voltage, and temperature (PVT) is controllable with low ripple. There are three selections for adjusting the output voltage: +5 V/+7 V/+10 V shifts, with the supply voltage ranging from 5 V to 32 V. It can remain tunable and stable at any shifts. The maximum deviation is ±0.265%, and the maximum load current can reach 30 mA. The ripple voltage is less than 0.3% (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mo<Δ</mo<</semantics<</math<</inline-formula< Vripple/Vout) underthe maximum load. The Monte Carlo simulation results show that the worst case of the process sensitivity (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<σ</mi<<mo</</mo<<mi<μ</mi<</mrow<</semantics<</math<</inline-formula<) is 0.1%. The charge-pump core area is 0.308 mm<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msup<<mrow<</mrow<<mn<2</mn<</msup<</semantics<</math<</inline-formula<, and the power consumption is 4.753 mW. The circuit can produce high-precision output and is suitable for high-side driving IC applications. closed-loop charge pump PVT robust PWM modulation process corner detection Electronics Liangkun Wang verfasserin aut Jiaqing Yu verfasserin aut In Electronics MDPI AG, 2013 11(2022), 18, p 2828 (DE-627)718626478 (DE-600)2662127-7 20799292 nnns volume:11 year:2022 number:18, p 2828 https://doi.org/10.3390/electronics11182828 kostenfrei https://doaj.org/article/63bafee05459471ba899ebcde0368f07 kostenfrei https://www.mdpi.com/2079-9292/11/18/2828 kostenfrei https://doaj.org/toc/2079-9292 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2022 18, p 2828
allfields_unstemmed	10.3390/electronics11182828 doi (DE-627)DOAJ084818964 (DE-599)DOAJ63bafee05459471ba899ebcde0368f07 DE-627 ger DE-627 rakwb eng TK7800-8360 Xinyi Ma verfasserin aut A 5 V-to-32 V Input PVT-Robust Charge-Pump Circuit with Adjustable Output in a 0.18 μm BCD Process 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, a new closed-loop charge-pump circuit with adjustable output voltage and an on-chip compensation technique is proposed. The environmental temperature and process corner can be detected with an on-chip detection circuit and automatically feedback an adjusted reference voltage. With this, the magnitude of the charge-pump output voltage with Pulse-Width Modulation (PWM) can be compensated. The charge-pump circuit is designed and verified with a 180 nm Bipolar-CMOS-DMOS (BCD) process, and its output voltage at different process, voltage, and temperature (PVT) is controllable with low ripple. There are three selections for adjusting the output voltage: +5 V/+7 V/+10 V shifts, with the supply voltage ranging from 5 V to 32 V. It can remain tunable and stable at any shifts. The maximum deviation is ±0.265%, and the maximum load current can reach 30 mA. The ripple voltage is less than 0.3% (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mo<Δ</mo<</semantics<</math<</inline-formula< Vripple/Vout) underthe maximum load. The Monte Carlo simulation results show that the worst case of the process sensitivity (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<σ</mi<<mo</</mo<<mi<μ</mi<</mrow<</semantics<</math<</inline-formula<) is 0.1%. The charge-pump core area is 0.308 mm<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msup<<mrow<</mrow<<mn<2</mn<</msup<</semantics<</math<</inline-formula<, and the power consumption is 4.753 mW. The circuit can produce high-precision output and is suitable for high-side driving IC applications. closed-loop charge pump PVT robust PWM modulation process corner detection Electronics Liangkun Wang verfasserin aut Jiaqing Yu verfasserin aut In Electronics MDPI AG, 2013 11(2022), 18, p 2828 (DE-627)718626478 (DE-600)2662127-7 20799292 nnns volume:11 year:2022 number:18, p 2828 https://doi.org/10.3390/electronics11182828 kostenfrei https://doaj.org/article/63bafee05459471ba899ebcde0368f07 kostenfrei https://www.mdpi.com/2079-9292/11/18/2828 kostenfrei https://doaj.org/toc/2079-9292 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2022 18, p 2828
allfieldsGer	10.3390/electronics11182828 doi (DE-627)DOAJ084818964 (DE-599)DOAJ63bafee05459471ba899ebcde0368f07 DE-627 ger DE-627 rakwb eng TK7800-8360 Xinyi Ma verfasserin aut A 5 V-to-32 V Input PVT-Robust Charge-Pump Circuit with Adjustable Output in a 0.18 μm BCD Process 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, a new closed-loop charge-pump circuit with adjustable output voltage and an on-chip compensation technique is proposed. The environmental temperature and process corner can be detected with an on-chip detection circuit and automatically feedback an adjusted reference voltage. With this, the magnitude of the charge-pump output voltage with Pulse-Width Modulation (PWM) can be compensated. The charge-pump circuit is designed and verified with a 180 nm Bipolar-CMOS-DMOS (BCD) process, and its output voltage at different process, voltage, and temperature (PVT) is controllable with low ripple. There are three selections for adjusting the output voltage: +5 V/+7 V/+10 V shifts, with the supply voltage ranging from 5 V to 32 V. It can remain tunable and stable at any shifts. The maximum deviation is ±0.265%, and the maximum load current can reach 30 mA. The ripple voltage is less than 0.3% (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mo<Δ</mo<</semantics<</math<</inline-formula< Vripple/Vout) underthe maximum load. The Monte Carlo simulation results show that the worst case of the process sensitivity (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<σ</mi<<mo</</mo<<mi<μ</mi<</mrow<</semantics<</math<</inline-formula<) is 0.1%. The charge-pump core area is 0.308 mm<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msup<<mrow<</mrow<<mn<2</mn<</msup<</semantics<</math<</inline-formula<, and the power consumption is 4.753 mW. The circuit can produce high-precision output and is suitable for high-side driving IC applications. closed-loop charge pump PVT robust PWM modulation process corner detection Electronics Liangkun Wang verfasserin aut Jiaqing Yu verfasserin aut In Electronics MDPI AG, 2013 11(2022), 18, p 2828 (DE-627)718626478 (DE-600)2662127-7 20799292 nnns volume:11 year:2022 number:18, p 2828 https://doi.org/10.3390/electronics11182828 kostenfrei https://doaj.org/article/63bafee05459471ba899ebcde0368f07 kostenfrei https://www.mdpi.com/2079-9292/11/18/2828 kostenfrei https://doaj.org/toc/2079-9292 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2022 18, p 2828
allfieldsSound	10.3390/electronics11182828 doi (DE-627)DOAJ084818964 (DE-599)DOAJ63bafee05459471ba899ebcde0368f07 DE-627 ger DE-627 rakwb eng TK7800-8360 Xinyi Ma verfasserin aut A 5 V-to-32 V Input PVT-Robust Charge-Pump Circuit with Adjustable Output in a 0.18 μm BCD Process 2022 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, a new closed-loop charge-pump circuit with adjustable output voltage and an on-chip compensation technique is proposed. The environmental temperature and process corner can be detected with an on-chip detection circuit and automatically feedback an adjusted reference voltage. With this, the magnitude of the charge-pump output voltage with Pulse-Width Modulation (PWM) can be compensated. The charge-pump circuit is designed and verified with a 180 nm Bipolar-CMOS-DMOS (BCD) process, and its output voltage at different process, voltage, and temperature (PVT) is controllable with low ripple. There are three selections for adjusting the output voltage: +5 V/+7 V/+10 V shifts, with the supply voltage ranging from 5 V to 32 V. It can remain tunable and stable at any shifts. The maximum deviation is ±0.265%, and the maximum load current can reach 30 mA. The ripple voltage is less than 0.3% (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mo<Δ</mo<</semantics<</math<</inline-formula< Vripple/Vout) underthe maximum load. The Monte Carlo simulation results show that the worst case of the process sensitivity (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<σ</mi<<mo</</mo<<mi<μ</mi<</mrow<</semantics<</math<</inline-formula<) is 0.1%. The charge-pump core area is 0.308 mm<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msup<<mrow<</mrow<<mn<2</mn<</msup<</semantics<</math<</inline-formula<, and the power consumption is 4.753 mW. The circuit can produce high-precision output and is suitable for high-side driving IC applications. closed-loop charge pump PVT robust PWM modulation process corner detection Electronics Liangkun Wang verfasserin aut Jiaqing Yu verfasserin aut In Electronics MDPI AG, 2013 11(2022), 18, p 2828 (DE-627)718626478 (DE-600)2662127-7 20799292 nnns volume:11 year:2022 number:18, p 2828 https://doi.org/10.3390/electronics11182828 kostenfrei https://doaj.org/article/63bafee05459471ba899ebcde0368f07 kostenfrei https://www.mdpi.com/2079-9292/11/18/2828 kostenfrei https://doaj.org/toc/2079-9292 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2022 18, p 2828
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authorswithroles_txt_mv	Xinyi Ma @@aut@@ Liangkun Wang @@aut@@ Jiaqing Yu @@aut@@
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The environmental temperature and process corner can be detected with an on-chip detection circuit and automatically feedback an adjusted reference voltage. With this, the magnitude of the charge-pump output voltage with Pulse-Width Modulation (PWM) can be compensated. The charge-pump circuit is designed and verified with a 180 nm Bipolar-CMOS-DMOS (BCD) process, and its output voltage at different process, voltage, and temperature (PVT) is controllable with low ripple. There are three selections for adjusting the output voltage: +5 V/+7 V/+10 V shifts, with the supply voltage ranging from 5 V to 32 V. It can remain tunable and stable at any shifts. The maximum deviation is ±0.265%, and the maximum load current can reach 30 mA. The ripple voltage is less than 0.3% (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mo<Δ</mo<</semantics<</math<</inline-formula< Vripple/Vout) underthe maximum load. 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callnumber-first	T - Technology
author	Xinyi Ma
spellingShingle	Xinyi Ma misc TK7800-8360 misc closed-loop charge pump misc PVT robust misc PWM modulation misc process corner detection misc Electronics A 5 V-to-32 V Input PVT-Robust Charge-Pump Circuit with Adjustable Output in a 0.18 μm BCD Process
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topic_title	TK7800-8360 A 5 V-to-32 V Input PVT-Robust Charge-Pump Circuit with Adjustable Output in a 0.18 μm BCD Process closed-loop charge pump PVT robust PWM modulation process corner detection
topic	misc TK7800-8360 misc closed-loop charge pump misc PVT robust misc PWM modulation misc process corner detection misc Electronics
topic_unstemmed	misc TK7800-8360 misc closed-loop charge pump misc PVT robust misc PWM modulation misc process corner detection misc Electronics
topic_browse	misc TK7800-8360 misc closed-loop charge pump misc PVT robust misc PWM modulation misc process corner detection misc Electronics
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title	A 5 V-to-32 V Input PVT-Robust Charge-Pump Circuit with Adjustable Output in a 0.18 μm BCD Process
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title_full	A 5 V-to-32 V Input PVT-Robust Charge-Pump Circuit with Adjustable Output in a 0.18 μm BCD Process
author_sort	Xinyi Ma
journal	Electronics
journalStr	Electronics
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author_browse	Xinyi Ma Liangkun Wang Jiaqing Yu
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doi_str_mv	10.3390/electronics11182828
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title_sort	5 v-to-32 v input pvt-robust charge-pump circuit with adjustable output in a 0.18 μm bcd process
callnumber	TK7800-8360
title_auth	A 5 V-to-32 V Input PVT-Robust Charge-Pump Circuit with Adjustable Output in a 0.18 μm BCD Process
abstract	In this paper, a new closed-loop charge-pump circuit with adjustable output voltage and an on-chip compensation technique is proposed. The environmental temperature and process corner can be detected with an on-chip detection circuit and automatically feedback an adjusted reference voltage. With this, the magnitude of the charge-pump output voltage with Pulse-Width Modulation (PWM) can be compensated. The charge-pump circuit is designed and verified with a 180 nm Bipolar-CMOS-DMOS (BCD) process, and its output voltage at different process, voltage, and temperature (PVT) is controllable with low ripple. There are three selections for adjusting the output voltage: +5 V/+7 V/+10 V shifts, with the supply voltage ranging from 5 V to 32 V. It can remain tunable and stable at any shifts. The maximum deviation is ±0.265%, and the maximum load current can reach 30 mA. The ripple voltage is less than 0.3% (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mo<Δ</mo<</semantics<</math<</inline-formula< Vripple/Vout) underthe maximum load. The Monte Carlo simulation results show that the worst case of the process sensitivity (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<σ</mi<<mo</</mo<<mi<μ</mi<</mrow<</semantics<</math<</inline-formula<) is 0.1%. The charge-pump core area is 0.308 mm<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msup<<mrow<</mrow<<mn<2</mn<</msup<</semantics<</math<</inline-formula<, and the power consumption is 4.753 mW. The circuit can produce high-precision output and is suitable for high-side driving IC applications.
abstractGer	In this paper, a new closed-loop charge-pump circuit with adjustable output voltage and an on-chip compensation technique is proposed. The environmental temperature and process corner can be detected with an on-chip detection circuit and automatically feedback an adjusted reference voltage. With this, the magnitude of the charge-pump output voltage with Pulse-Width Modulation (PWM) can be compensated. The charge-pump circuit is designed and verified with a 180 nm Bipolar-CMOS-DMOS (BCD) process, and its output voltage at different process, voltage, and temperature (PVT) is controllable with low ripple. There are three selections for adjusting the output voltage: +5 V/+7 V/+10 V shifts, with the supply voltage ranging from 5 V to 32 V. It can remain tunable and stable at any shifts. The maximum deviation is ±0.265%, and the maximum load current can reach 30 mA. The ripple voltage is less than 0.3% (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mo<Δ</mo<</semantics<</math<</inline-formula< Vripple/Vout) underthe maximum load. The Monte Carlo simulation results show that the worst case of the process sensitivity (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<σ</mi<<mo</</mo<<mi<μ</mi<</mrow<</semantics<</math<</inline-formula<) is 0.1%. The charge-pump core area is 0.308 mm<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msup<<mrow<</mrow<<mn<2</mn<</msup<</semantics<</math<</inline-formula<, and the power consumption is 4.753 mW. The circuit can produce high-precision output and is suitable for high-side driving IC applications.
abstract_unstemmed	In this paper, a new closed-loop charge-pump circuit with adjustable output voltage and an on-chip compensation technique is proposed. The environmental temperature and process corner can be detected with an on-chip detection circuit and automatically feedback an adjusted reference voltage. With this, the magnitude of the charge-pump output voltage with Pulse-Width Modulation (PWM) can be compensated. The charge-pump circuit is designed and verified with a 180 nm Bipolar-CMOS-DMOS (BCD) process, and its output voltage at different process, voltage, and temperature (PVT) is controllable with low ripple. There are three selections for adjusting the output voltage: +5 V/+7 V/+10 V shifts, with the supply voltage ranging from 5 V to 32 V. It can remain tunable and stable at any shifts. The maximum deviation is ±0.265%, and the maximum load current can reach 30 mA. The ripple voltage is less than 0.3% (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mo<Δ</mo<</semantics<</math<</inline-formula< Vripple/Vout) underthe maximum load. The Monte Carlo simulation results show that the worst case of the process sensitivity (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<σ</mi<<mo</</mo<<mi<μ</mi<</mrow<</semantics<</math<</inline-formula<) is 0.1%. The charge-pump core area is 0.308 mm<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msup<<mrow<</mrow<<mn<2</mn<</msup<</semantics<</math<</inline-formula<, and the power consumption is 4.753 mW. The circuit can produce high-precision output and is suitable for high-side driving IC applications.
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container_issue	18, p 2828
title_short	A 5 V-to-32 V Input PVT-Robust Charge-Pump Circuit with Adjustable Output in a 0.18 μm BCD Process
url	https://doi.org/10.3390/electronics11182828 https://doaj.org/article/63bafee05459471ba899ebcde0368f07 https://www.mdpi.com/2079-9292/11/18/2828 https://doaj.org/toc/2079-9292
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author2	Liangkun Wang Jiaqing Yu
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doi_str	10.3390/electronics11182828
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up_date	2024-07-04T00:40:56.579Z
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The Monte Carlo simulation results show that the worst case of the process sensitivity (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mi<σ</mi<<mo</</mo<<mi<μ</mi<</mrow<</semantics<</math<</inline-formula<) is 0.1%. The charge-pump core area is 0.308 mm<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<msup<<mrow<</mrow<<mn<2</mn<</msup<</semantics<</math<</inline-formula<, and the power consumption is 4.753 mW. 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A 5 V-to-32 V Input PVT-Robust Charge-Pump Circuit with Adjustable Output in a 0.18 μm BCD Process

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