Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors

We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed investigation and comparison of the electrical properties of GaN-based HEMTs according to the substrates/films, GaN-based HEMTs were processed using...
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Autor*in:	Sung-Jae Chang [verfasserIn] Kyu-Jun Cho [verfasserIn] Sang-Youl Lee [verfasserIn] Hwan-Hee Jeong [verfasserIn] Jae-Hoon Lee [verfasserIn] Hyun-Wook Jung [verfasserIn] Sung-Bum Bae [verfasserIn] Il-Gyu Choi [verfasserIn] Hae-Cheon Kim [verfasserIn] Ho-Kyun Ahn [verfasserIn] Jong-Won Lim [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2021

Schlagwörter:	GaN HEMT laser lift-off device transfer self-heating effect

Übergeordnetes Werk:	In: Crystals - MDPI AG, 2011, 11(2021), 11, p 1414
Übergeordnetes Werk:	volume:11 ; year:2021 ; number:11, p 1414

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/cryst11111414

Katalog-ID:	DOAJ085511773

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language	English
source	In Crystals 11(2021), 11, p 1414 volume:11 year:2021 number:11, p 1414
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authorswithroles_txt_mv	Sung-Jae Chang @@aut@@ Kyu-Jun Cho @@aut@@ Sang-Youl Lee @@aut@@ Hwan-Hee Jeong @@aut@@ Jae-Hoon Lee @@aut@@ Hyun-Wook Jung @@aut@@ Sung-Bum Bae @@aut@@ Il-Gyu Choi @@aut@@ Hae-Cheon Kim @@aut@@ Ho-Kyun Ahn @@aut@@ Jong-Won Lim @@aut@@
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callnumber-first	Q - Science
author	Sung-Jae Chang
spellingShingle	Sung-Jae Chang misc QD901-999 misc GaN misc HEMT misc laser lift-off misc device transfer misc self-heating effect misc Crystallography Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors
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topic_title	QD901-999 Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors GaN HEMT laser lift-off device transfer self-heating effect
topic	misc QD901-999 misc GaN misc HEMT misc laser lift-off misc device transfer misc self-heating effect misc Crystallography
topic_unstemmed	misc QD901-999 misc GaN misc HEMT misc laser lift-off misc device transfer misc self-heating effect misc Crystallography
topic_browse	misc QD901-999 misc GaN misc HEMT misc laser lift-off misc device transfer misc self-heating effect misc Crystallography
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title	Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors
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title_full	Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors
author_sort	Sung-Jae Chang
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author_browse	Sung-Jae Chang Kyu-Jun Cho Sang-Youl Lee Hwan-Hee Jeong Jae-Hoon Lee Hyun-Wook Jung Sung-Bum Bae Il-Gyu Choi Hae-Cheon Kim Ho-Kyun Ahn Jong-Won Lim
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title_sort	substrate effects on the electrical properties in gan-based high electron mobility transistors
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title_auth	Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors
abstract	We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed investigation and comparison of the electrical properties of GaN-based HEMTs according to the substrates/films, GaN-based HEMTs were processed using 4-inch sapphire substrates and separated from their original substrates through the laser lift-off technique. The separated AlGaN/GaN films including processed GaN-based HEMTs were bonded to AlN substrate or plated with a 100 µm-thick Cu at the back-side of the devices since AlN substrate and Cu film exhibit higher thermal conductivity than the sapphire substrate. Compared to the sapphire substrate, DC and RF properties such as drain current, transconductance, cut-off frequency and maximum oscillation frequency were improved, when GaN-based HEMTs were operated on AlN substrate or Cu film. Our systematic study has revealed that the device property improvement results from the diminishment of the self-heating effect, increase in carrier mobility under the gated region, and amelioration of sheet resistance at the access region. C(V) and pulse-mode stress measurements have confirmed that the back-side processing for the device transfer from sapphire substrate onto AlN substrate or Cu film did not induce the critical defects close to the AlGaN/GaN hetero-interface.
abstractGer	We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed investigation and comparison of the electrical properties of GaN-based HEMTs according to the substrates/films, GaN-based HEMTs were processed using 4-inch sapphire substrates and separated from their original substrates through the laser lift-off technique. The separated AlGaN/GaN films including processed GaN-based HEMTs were bonded to AlN substrate or plated with a 100 µm-thick Cu at the back-side of the devices since AlN substrate and Cu film exhibit higher thermal conductivity than the sapphire substrate. Compared to the sapphire substrate, DC and RF properties such as drain current, transconductance, cut-off frequency and maximum oscillation frequency were improved, when GaN-based HEMTs were operated on AlN substrate or Cu film. Our systematic study has revealed that the device property improvement results from the diminishment of the self-heating effect, increase in carrier mobility under the gated region, and amelioration of sheet resistance at the access region. C(V) and pulse-mode stress measurements have confirmed that the back-side processing for the device transfer from sapphire substrate onto AlN substrate or Cu film did not induce the critical defects close to the AlGaN/GaN hetero-interface.
abstract_unstemmed	We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed investigation and comparison of the electrical properties of GaN-based HEMTs according to the substrates/films, GaN-based HEMTs were processed using 4-inch sapphire substrates and separated from their original substrates through the laser lift-off technique. The separated AlGaN/GaN films including processed GaN-based HEMTs were bonded to AlN substrate or plated with a 100 µm-thick Cu at the back-side of the devices since AlN substrate and Cu film exhibit higher thermal conductivity than the sapphire substrate. Compared to the sapphire substrate, DC and RF properties such as drain current, transconductance, cut-off frequency and maximum oscillation frequency were improved, when GaN-based HEMTs were operated on AlN substrate or Cu film. Our systematic study has revealed that the device property improvement results from the diminishment of the self-heating effect, increase in carrier mobility under the gated region, and amelioration of sheet resistance at the access region. C(V) and pulse-mode stress measurements have confirmed that the back-side processing for the device transfer from sapphire substrate onto AlN substrate or Cu film did not induce the critical defects close to the AlGaN/GaN hetero-interface.
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container_issue	11, p 1414
title_short	Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors
url	https://doi.org/10.3390/cryst11111414 https://doaj.org/article/499bcfa0b2c14cde967ac96b2b7f0f8e https://www.mdpi.com/2073-4352/11/11/1414 https://doaj.org/toc/2073-4352
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author2	Kyu-Jun Cho Sang-Youl Lee Hwan-Hee Jeong Jae-Hoon Lee Hyun-Wook Jung Sung-Bum Bae Il-Gyu Choi Hae-Cheon Kim Ho-Kyun Ahn Jong-Won Lim
author2Str	Kyu-Jun Cho Sang-Youl Lee Hwan-Hee Jeong Jae-Hoon Lee Hyun-Wook Jung Sung-Bum Bae Il-Gyu Choi Hae-Cheon Kim Ho-Kyun Ahn Jong-Won Lim
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doi_str	10.3390/cryst11111414
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up_date	2024-07-03T15:11:07.083Z
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Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors

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