A Micromachined Pressure Sensor with Integrated Resonator Operating at Atmospheric Pressure

A novel resonant pressure sensor with an improved micromechanical double-ended tuning fork resonator packaged in dry air at atmospheric pressure is presented. The resonator is electrostatically driven and capacitively detected, and the sensor is designed to realize a low cost resonant pressure sens...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Sen Ren [verfasserIn] Weizheng Yuan [verfasserIn] Dayong Qiao [verfasserIn] Jinjun Deng [verfasserIn] Xiaodong Sun [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2013

Schlagwörter:	pressure sensor resonant sensor micromachining micro resonator atmospheric pressure quality factor

Übergeordnetes Werk:	In: Sensors - MDPI AG, 2003, 13(2013), 12, Seite 17006-17024
Übergeordnetes Werk:	volume:13 ; year:2013 ; number:12 ; pages:17006-17024

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/s131217006

Katalog-ID:	DOAJ086598236

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allfields	10.3390/s131217006 doi (DE-627)DOAJ086598236 (DE-599)DOAJ549fe6bdc68045ceabd047463e048087 DE-627 ger DE-627 rakwb eng TP1-1185 Sen Ren verfasserin aut A Micromachined Pressure Sensor with Integrated Resonator Operating at Atmospheric Pressure 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A novel resonant pressure sensor with an improved micromechanical double-ended tuning fork resonator packaged in dry air at atmospheric pressure is presented. The resonator is electrostatically driven and capacitively detected, and the sensor is designed to realize a low cost resonant pressure sensor with medium accuracy. Various damping mechanisms in a resonator that is vibrating at atmospheric pressure are analyzed in detail, and a formula is developed to predict the overall quality factor. A trade-off has been reached between the quality factor, stress sensitivity and drive capability of the resonator. Furthermore, differential sense elements and the method of electromechanical amplitude modulation are used for capacitive detection to obtain a large signal-to-noise ratio. The prototype sensor chip is successfully fabricated using a micromachining process based on a commercially available silicon-on-insulator wafer and is hermetically encapsulated in a custom 16-pin Kovar package. Preliminary measurements show that the fundamental frequency of the resonant pressure sensor is approximately 34.55 kHz with a pressure sensitivity of 20.77 Hz/kPa. Over the full scale pressure range of 100–400 kPa and the whole temperature range of −20–60 °C, high quality factors from 1,146 to 1,772 are obtained. The characterization of the prototype sensor reveals the feasibility of a resonant pressure sensor packaged at atmospheric pressure. pressure sensor resonant sensor micromachining micro resonator atmospheric pressure quality factor Chemical technology Weizheng Yuan verfasserin aut Dayong Qiao verfasserin aut Jinjun Deng verfasserin aut Xiaodong Sun verfasserin aut In Sensors MDPI AG, 2003 13(2013), 12, Seite 17006-17024 (DE-627)331640910 (DE-600)2052857-7 14248220 nnns volume:13 year:2013 number:12 pages:17006-17024 https://doi.org/10.3390/s131217006 kostenfrei https://doaj.org/article/549fe6bdc68045ceabd047463e048087 kostenfrei http://www.mdpi.com/1424-8220/13/12/17006 kostenfrei https://doaj.org/toc/1424-8220 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2111 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2013 12 17006-17024
spelling	10.3390/s131217006 doi (DE-627)DOAJ086598236 (DE-599)DOAJ549fe6bdc68045ceabd047463e048087 DE-627 ger DE-627 rakwb eng TP1-1185 Sen Ren verfasserin aut A Micromachined Pressure Sensor with Integrated Resonator Operating at Atmospheric Pressure 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A novel resonant pressure sensor with an improved micromechanical double-ended tuning fork resonator packaged in dry air at atmospheric pressure is presented. The resonator is electrostatically driven and capacitively detected, and the sensor is designed to realize a low cost resonant pressure sensor with medium accuracy. Various damping mechanisms in a resonator that is vibrating at atmospheric pressure are analyzed in detail, and a formula is developed to predict the overall quality factor. A trade-off has been reached between the quality factor, stress sensitivity and drive capability of the resonator. Furthermore, differential sense elements and the method of electromechanical amplitude modulation are used for capacitive detection to obtain a large signal-to-noise ratio. The prototype sensor chip is successfully fabricated using a micromachining process based on a commercially available silicon-on-insulator wafer and is hermetically encapsulated in a custom 16-pin Kovar package. Preliminary measurements show that the fundamental frequency of the resonant pressure sensor is approximately 34.55 kHz with a pressure sensitivity of 20.77 Hz/kPa. Over the full scale pressure range of 100–400 kPa and the whole temperature range of −20–60 °C, high quality factors from 1,146 to 1,772 are obtained. The characterization of the prototype sensor reveals the feasibility of a resonant pressure sensor packaged at atmospheric pressure. pressure sensor resonant sensor micromachining micro resonator atmospheric pressure quality factor Chemical technology Weizheng Yuan verfasserin aut Dayong Qiao verfasserin aut Jinjun Deng verfasserin aut Xiaodong Sun verfasserin aut In Sensors MDPI AG, 2003 13(2013), 12, Seite 17006-17024 (DE-627)331640910 (DE-600)2052857-7 14248220 nnns volume:13 year:2013 number:12 pages:17006-17024 https://doi.org/10.3390/s131217006 kostenfrei https://doaj.org/article/549fe6bdc68045ceabd047463e048087 kostenfrei http://www.mdpi.com/1424-8220/13/12/17006 kostenfrei https://doaj.org/toc/1424-8220 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2111 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2013 12 17006-17024
allfields_unstemmed	10.3390/s131217006 doi (DE-627)DOAJ086598236 (DE-599)DOAJ549fe6bdc68045ceabd047463e048087 DE-627 ger DE-627 rakwb eng TP1-1185 Sen Ren verfasserin aut A Micromachined Pressure Sensor with Integrated Resonator Operating at Atmospheric Pressure 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A novel resonant pressure sensor with an improved micromechanical double-ended tuning fork resonator packaged in dry air at atmospheric pressure is presented. The resonator is electrostatically driven and capacitively detected, and the sensor is designed to realize a low cost resonant pressure sensor with medium accuracy. Various damping mechanisms in a resonator that is vibrating at atmospheric pressure are analyzed in detail, and a formula is developed to predict the overall quality factor. A trade-off has been reached between the quality factor, stress sensitivity and drive capability of the resonator. Furthermore, differential sense elements and the method of electromechanical amplitude modulation are used for capacitive detection to obtain a large signal-to-noise ratio. The prototype sensor chip is successfully fabricated using a micromachining process based on a commercially available silicon-on-insulator wafer and is hermetically encapsulated in a custom 16-pin Kovar package. Preliminary measurements show that the fundamental frequency of the resonant pressure sensor is approximately 34.55 kHz with a pressure sensitivity of 20.77 Hz/kPa. Over the full scale pressure range of 100–400 kPa and the whole temperature range of −20–60 °C, high quality factors from 1,146 to 1,772 are obtained. The characterization of the prototype sensor reveals the feasibility of a resonant pressure sensor packaged at atmospheric pressure. pressure sensor resonant sensor micromachining micro resonator atmospheric pressure quality factor Chemical technology Weizheng Yuan verfasserin aut Dayong Qiao verfasserin aut Jinjun Deng verfasserin aut Xiaodong Sun verfasserin aut In Sensors MDPI AG, 2003 13(2013), 12, Seite 17006-17024 (DE-627)331640910 (DE-600)2052857-7 14248220 nnns volume:13 year:2013 number:12 pages:17006-17024 https://doi.org/10.3390/s131217006 kostenfrei https://doaj.org/article/549fe6bdc68045ceabd047463e048087 kostenfrei http://www.mdpi.com/1424-8220/13/12/17006 kostenfrei https://doaj.org/toc/1424-8220 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2111 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2013 12 17006-17024
allfieldsGer	10.3390/s131217006 doi (DE-627)DOAJ086598236 (DE-599)DOAJ549fe6bdc68045ceabd047463e048087 DE-627 ger DE-627 rakwb eng TP1-1185 Sen Ren verfasserin aut A Micromachined Pressure Sensor with Integrated Resonator Operating at Atmospheric Pressure 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A novel resonant pressure sensor with an improved micromechanical double-ended tuning fork resonator packaged in dry air at atmospheric pressure is presented. The resonator is electrostatically driven and capacitively detected, and the sensor is designed to realize a low cost resonant pressure sensor with medium accuracy. Various damping mechanisms in a resonator that is vibrating at atmospheric pressure are analyzed in detail, and a formula is developed to predict the overall quality factor. A trade-off has been reached between the quality factor, stress sensitivity and drive capability of the resonator. Furthermore, differential sense elements and the method of electromechanical amplitude modulation are used for capacitive detection to obtain a large signal-to-noise ratio. The prototype sensor chip is successfully fabricated using a micromachining process based on a commercially available silicon-on-insulator wafer and is hermetically encapsulated in a custom 16-pin Kovar package. Preliminary measurements show that the fundamental frequency of the resonant pressure sensor is approximately 34.55 kHz with a pressure sensitivity of 20.77 Hz/kPa. Over the full scale pressure range of 100–400 kPa and the whole temperature range of −20–60 °C, high quality factors from 1,146 to 1,772 are obtained. The characterization of the prototype sensor reveals the feasibility of a resonant pressure sensor packaged at atmospheric pressure. pressure sensor resonant sensor micromachining micro resonator atmospheric pressure quality factor Chemical technology Weizheng Yuan verfasserin aut Dayong Qiao verfasserin aut Jinjun Deng verfasserin aut Xiaodong Sun verfasserin aut In Sensors MDPI AG, 2003 13(2013), 12, Seite 17006-17024 (DE-627)331640910 (DE-600)2052857-7 14248220 nnns volume:13 year:2013 number:12 pages:17006-17024 https://doi.org/10.3390/s131217006 kostenfrei https://doaj.org/article/549fe6bdc68045ceabd047463e048087 kostenfrei http://www.mdpi.com/1424-8220/13/12/17006 kostenfrei https://doaj.org/toc/1424-8220 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2111 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2013 12 17006-17024
allfieldsSound	10.3390/s131217006 doi (DE-627)DOAJ086598236 (DE-599)DOAJ549fe6bdc68045ceabd047463e048087 DE-627 ger DE-627 rakwb eng TP1-1185 Sen Ren verfasserin aut A Micromachined Pressure Sensor with Integrated Resonator Operating at Atmospheric Pressure 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A novel resonant pressure sensor with an improved micromechanical double-ended tuning fork resonator packaged in dry air at atmospheric pressure is presented. The resonator is electrostatically driven and capacitively detected, and the sensor is designed to realize a low cost resonant pressure sensor with medium accuracy. Various damping mechanisms in a resonator that is vibrating at atmospheric pressure are analyzed in detail, and a formula is developed to predict the overall quality factor. A trade-off has been reached between the quality factor, stress sensitivity and drive capability of the resonator. Furthermore, differential sense elements and the method of electromechanical amplitude modulation are used for capacitive detection to obtain a large signal-to-noise ratio. The prototype sensor chip is successfully fabricated using a micromachining process based on a commercially available silicon-on-insulator wafer and is hermetically encapsulated in a custom 16-pin Kovar package. Preliminary measurements show that the fundamental frequency of the resonant pressure sensor is approximately 34.55 kHz with a pressure sensitivity of 20.77 Hz/kPa. Over the full scale pressure range of 100–400 kPa and the whole temperature range of −20–60 °C, high quality factors from 1,146 to 1,772 are obtained. The characterization of the prototype sensor reveals the feasibility of a resonant pressure sensor packaged at atmospheric pressure. pressure sensor resonant sensor micromachining micro resonator atmospheric pressure quality factor Chemical technology Weizheng Yuan verfasserin aut Dayong Qiao verfasserin aut Jinjun Deng verfasserin aut Xiaodong Sun verfasserin aut In Sensors MDPI AG, 2003 13(2013), 12, Seite 17006-17024 (DE-627)331640910 (DE-600)2052857-7 14248220 nnns volume:13 year:2013 number:12 pages:17006-17024 https://doi.org/10.3390/s131217006 kostenfrei https://doaj.org/article/549fe6bdc68045ceabd047463e048087 kostenfrei http://www.mdpi.com/1424-8220/13/12/17006 kostenfrei https://doaj.org/toc/1424-8220 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2111 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2013 12 17006-17024
language	English
source	In Sensors 13(2013), 12, Seite 17006-17024 volume:13 year:2013 number:12 pages:17006-17024
sourceStr	In Sensors 13(2013), 12, Seite 17006-17024 volume:13 year:2013 number:12 pages:17006-17024
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	pressure sensor resonant sensor micromachining micro resonator atmospheric pressure quality factor Chemical technology
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container_title	Sensors
authorswithroles_txt_mv	Sen Ren @@aut@@ Weizheng Yuan @@aut@@ Dayong Qiao @@aut@@ Jinjun Deng @@aut@@ Xiaodong Sun @@aut@@
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callnumber-first	T - Technology
author	Sen Ren
spellingShingle	Sen Ren misc TP1-1185 misc pressure sensor misc resonant sensor misc micromachining misc micro resonator misc atmospheric pressure misc quality factor misc Chemical technology A Micromachined Pressure Sensor with Integrated Resonator Operating at Atmospheric Pressure
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topic_title	TP1-1185 A Micromachined Pressure Sensor with Integrated Resonator Operating at Atmospheric Pressure pressure sensor resonant sensor micromachining micro resonator atmospheric pressure quality factor
topic	misc TP1-1185 misc pressure sensor misc resonant sensor misc micromachining misc micro resonator misc atmospheric pressure misc quality factor misc Chemical technology
topic_unstemmed	misc TP1-1185 misc pressure sensor misc resonant sensor misc micromachining misc micro resonator misc atmospheric pressure misc quality factor misc Chemical technology
topic_browse	misc TP1-1185 misc pressure sensor misc resonant sensor misc micromachining misc micro resonator misc atmospheric pressure misc quality factor misc Chemical technology
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title	A Micromachined Pressure Sensor with Integrated Resonator Operating at Atmospheric Pressure
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title_full	A Micromachined Pressure Sensor with Integrated Resonator Operating at Atmospheric Pressure
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title_sort	micromachined pressure sensor with integrated resonator operating at atmospheric pressure
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title_auth	A Micromachined Pressure Sensor with Integrated Resonator Operating at Atmospheric Pressure
abstract	A novel resonant pressure sensor with an improved micromechanical double-ended tuning fork resonator packaged in dry air at atmospheric pressure is presented. The resonator is electrostatically driven and capacitively detected, and the sensor is designed to realize a low cost resonant pressure sensor with medium accuracy. Various damping mechanisms in a resonator that is vibrating at atmospheric pressure are analyzed in detail, and a formula is developed to predict the overall quality factor. A trade-off has been reached between the quality factor, stress sensitivity and drive capability of the resonator. Furthermore, differential sense elements and the method of electromechanical amplitude modulation are used for capacitive detection to obtain a large signal-to-noise ratio. The prototype sensor chip is successfully fabricated using a micromachining process based on a commercially available silicon-on-insulator wafer and is hermetically encapsulated in a custom 16-pin Kovar package. Preliminary measurements show that the fundamental frequency of the resonant pressure sensor is approximately 34.55 kHz with a pressure sensitivity of 20.77 Hz/kPa. Over the full scale pressure range of 100–400 kPa and the whole temperature range of −20–60 °C, high quality factors from 1,146 to 1,772 are obtained. The characterization of the prototype sensor reveals the feasibility of a resonant pressure sensor packaged at atmospheric pressure.
abstractGer	A novel resonant pressure sensor with an improved micromechanical double-ended tuning fork resonator packaged in dry air at atmospheric pressure is presented. The resonator is electrostatically driven and capacitively detected, and the sensor is designed to realize a low cost resonant pressure sensor with medium accuracy. Various damping mechanisms in a resonator that is vibrating at atmospheric pressure are analyzed in detail, and a formula is developed to predict the overall quality factor. A trade-off has been reached between the quality factor, stress sensitivity and drive capability of the resonator. Furthermore, differential sense elements and the method of electromechanical amplitude modulation are used for capacitive detection to obtain a large signal-to-noise ratio. The prototype sensor chip is successfully fabricated using a micromachining process based on a commercially available silicon-on-insulator wafer and is hermetically encapsulated in a custom 16-pin Kovar package. Preliminary measurements show that the fundamental frequency of the resonant pressure sensor is approximately 34.55 kHz with a pressure sensitivity of 20.77 Hz/kPa. Over the full scale pressure range of 100–400 kPa and the whole temperature range of −20–60 °C, high quality factors from 1,146 to 1,772 are obtained. The characterization of the prototype sensor reveals the feasibility of a resonant pressure sensor packaged at atmospheric pressure.
abstract_unstemmed	A novel resonant pressure sensor with an improved micromechanical double-ended tuning fork resonator packaged in dry air at atmospheric pressure is presented. The resonator is electrostatically driven and capacitively detected, and the sensor is designed to realize a low cost resonant pressure sensor with medium accuracy. Various damping mechanisms in a resonator that is vibrating at atmospheric pressure are analyzed in detail, and a formula is developed to predict the overall quality factor. A trade-off has been reached between the quality factor, stress sensitivity and drive capability of the resonator. Furthermore, differential sense elements and the method of electromechanical amplitude modulation are used for capacitive detection to obtain a large signal-to-noise ratio. The prototype sensor chip is successfully fabricated using a micromachining process based on a commercially available silicon-on-insulator wafer and is hermetically encapsulated in a custom 16-pin Kovar package. Preliminary measurements show that the fundamental frequency of the resonant pressure sensor is approximately 34.55 kHz with a pressure sensitivity of 20.77 Hz/kPa. Over the full scale pressure range of 100–400 kPa and the whole temperature range of −20–60 °C, high quality factors from 1,146 to 1,772 are obtained. The characterization of the prototype sensor reveals the feasibility of a resonant pressure sensor packaged at atmospheric pressure.
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title_short	A Micromachined Pressure Sensor with Integrated Resonator Operating at Atmospheric Pressure
url	https://doi.org/10.3390/s131217006 https://doaj.org/article/549fe6bdc68045ceabd047463e048087 http://www.mdpi.com/1424-8220/13/12/17006 https://doaj.org/toc/1424-8220
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up_date	2024-07-03T21:38:12.924Z
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A Micromachined Pressure Sensor with Integrated Resonator Operating at Atmospheric Pressure

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