Electrical Properties and Thermal Annealing Effects of Polycrystalline MoS<sub<2</sub<-MoS<sub<X</sub< Nanowalls Grown by Sputtering Deposition Method

Straightforward growth of nanostructured low-bandgap materials is a key issue in mass production for electronic device applications. We report here facile nanowall growth of MoS<sub<2</sub<-MoS<sub<X</sub< using sputter deposition and investigate the electronic properties of...
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Autor*in:	Doo-Seung Um [verfasserIn] Mi-Jin Jin [verfasserIn] Jong-Chang Woo [verfasserIn] Dong-Pyo Kim [verfasserIn] Jungmin Park [verfasserIn] Younghun Jo [verfasserIn] Gwan-Ha Kim [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2021

Schlagwörter:	MoS nanowall crystal growth sputter deposition MoS

Übergeordnetes Werk:	In: Crystals - MDPI AG, 2011, 11(2021), 4, p 351
Übergeordnetes Werk:	volume:11 ; year:2021 ; number:4, p 351

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/cryst11040351

Katalog-ID:	DOAJ086628585

Internformat


LEADER	01000caa a22002652 4500
001	DOAJ086628585
003	DE-627
005	20240412185640.0
007	cr uuu---uuuuu
008	230311s2021 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.3390/cryst11040351 \|2 doi
035			\|a (DE-627)DOAJ086628585
035			\|a (DE-599)DOAJ30584de3dc334ab4a4d1ffeff8f33859
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
050		0	\|a QD901-999
100	0		\|a Doo-Seung Um \|e verfasserin \|4 aut
245	1	0	\|a Electrical Properties and Thermal Annealing Effects of Polycrystalline MoS<sub<2</sub<-MoS<sub<X</sub< Nanowalls Grown by Sputtering Deposition Method
264		1	\|c 2021
336			\|a Text \|b txt \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a Straightforward growth of nanostructured low-bandgap materials is a key issue in mass production for electronic device applications. We report here facile nanowall growth of MoS<sub<2</sub<-MoS<sub<X</sub< using sputter deposition and investigate the electronic properties of the nanowalls. MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls become gradually thicker and taller, with primarily (100)-plane growth directions, with increasing deposition time. Nanowalls combine with nearby walls when a rapid thermal annealing (RTA, 200 °C–500 °C) process is applied. All samples have conventional low-bandgap semiconductor behavior with exponential resistance increase as measurement temperature decreases. The 750 nm-thick MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls have a sheet carrier mobility of up to 2 cm<sup<2</sup<·V<sup<−1</sup<·s<sup<−1</sup< and bulk carrier concentration of ~10<sup<17</sup<–10<sup<19</sup< cm<sup<−3</sup< range depending on RTA temperature. Furthermore, perpendicular field-dependent magnetoresistance at 300 K shows negative magnetoresistance behavior, which displays resistance decay by applying a magnetic field (MR ratio in the −1 % range at 5 T). Interestingly, 400 °C RTA treated samples show a resistance upturn when applying an external magnetic field of more than 3 T. Our research suggests tuneability of MoS<sub<2</sub< nanowall size and mesoscopic electronic transport properties.
650		4	\|a MoS<sub<2</sub<
650		4	\|a nanowall
650		4	\|a crystal growth
650		4	\|a sputter deposition
650		4	\|a MoS<sub<2</sub< polycrystal characterization
653		0	\|a Crystallography
700	0		\|a Mi-Jin Jin \|e verfasserin \|4 aut
700	0		\|a Jong-Chang Woo \|e verfasserin \|4 aut
700	0		\|a Dong-Pyo Kim \|e verfasserin \|4 aut
700	0		\|a Jungmin Park \|e verfasserin \|4 aut
700	0		\|a Younghun Jo \|e verfasserin \|4 aut
700	0		\|a Gwan-Ha Kim \|e verfasserin \|4 aut
773	0	8	\|i In \|t Crystals \|d MDPI AG, 2011 \|g 11(2021), 4, p 351 \|w (DE-627)718303067 \|w (DE-600)2661516-2 \|x 20734352 \|7 nnns
773	1	8	\|g volume:11 \|g year:2021 \|g number:4, p 351
856	4	0	\|u https://doi.org/10.3390/cryst11040351 \|z kostenfrei
856	4	0	\|u https://doaj.org/article/30584de3dc334ab4a4d1ffeff8f33859 \|z kostenfrei
856	4	0	\|u https://www.mdpi.com/2073-4352/11/4/351 \|z kostenfrei
856	4	2	\|u https://doaj.org/toc/2073-4352 \|y Journal toc \|z kostenfrei
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_DOAJ
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_95
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_151
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_213
912			\|a GBV_ILN_230
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_602
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4367
912			\|a GBV_ILN_4700
951			\|a AR
952			\|d 11 \|j 2021 \|e 4, p 351

Indexfelder

author_variant	d s u dsu m j j mjj j c w jcw d p k dpk j p jp y j yj g h k ghk
matchkey_str	article:20734352:2021----::lcrclrprisntemlnelnefcsfoyrsalnmsu2umsuxunnwls
hierarchy_sort_str	2021
callnumber-subject-code	QD
publishDate	2021
allfields	10.3390/cryst11040351 doi (DE-627)DOAJ086628585 (DE-599)DOAJ30584de3dc334ab4a4d1ffeff8f33859 DE-627 ger DE-627 rakwb eng QD901-999 Doo-Seung Um verfasserin aut Electrical Properties and Thermal Annealing Effects of Polycrystalline MoS<sub<2</sub<-MoS<sub<X</sub< Nanowalls Grown by Sputtering Deposition Method 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Straightforward growth of nanostructured low-bandgap materials is a key issue in mass production for electronic device applications. We report here facile nanowall growth of MoS<sub<2</sub<-MoS<sub<X</sub< using sputter deposition and investigate the electronic properties of the nanowalls. MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls become gradually thicker and taller, with primarily (100)-plane growth directions, with increasing deposition time. Nanowalls combine with nearby walls when a rapid thermal annealing (RTA, 200 °C–500 °C) process is applied. All samples have conventional low-bandgap semiconductor behavior with exponential resistance increase as measurement temperature decreases. The 750 nm-thick MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls have a sheet carrier mobility of up to 2 cm<sup<2</sup<·V<sup<−1</sup<·s<sup<−1</sup< and bulk carrier concentration of ~10<sup<17</sup<–10<sup<19</sup< cm<sup<−3</sup< range depending on RTA temperature. Furthermore, perpendicular field-dependent magnetoresistance at 300 K shows negative magnetoresistance behavior, which displays resistance decay by applying a magnetic field (MR ratio in the −1 % range at 5 T). Interestingly, 400 °C RTA treated samples show a resistance upturn when applying an external magnetic field of more than 3 T. Our research suggests tuneability of MoS<sub<2</sub< nanowall size and mesoscopic electronic transport properties. MoS<sub<2</sub< nanowall crystal growth sputter deposition MoS<sub<2</sub< polycrystal characterization Crystallography Mi-Jin Jin verfasserin aut Jong-Chang Woo verfasserin aut Dong-Pyo Kim verfasserin aut Jungmin Park verfasserin aut Younghun Jo verfasserin aut Gwan-Ha Kim verfasserin aut In Crystals MDPI AG, 2011 11(2021), 4, p 351 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:11 year:2021 number:4, p 351 https://doi.org/10.3390/cryst11040351 kostenfrei https://doaj.org/article/30584de3dc334ab4a4d1ffeff8f33859 kostenfrei https://www.mdpi.com/2073-4352/11/4/351 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 4, p 351
spelling	10.3390/cryst11040351 doi (DE-627)DOAJ086628585 (DE-599)DOAJ30584de3dc334ab4a4d1ffeff8f33859 DE-627 ger DE-627 rakwb eng QD901-999 Doo-Seung Um verfasserin aut Electrical Properties and Thermal Annealing Effects of Polycrystalline MoS<sub<2</sub<-MoS<sub<X</sub< Nanowalls Grown by Sputtering Deposition Method 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Straightforward growth of nanostructured low-bandgap materials is a key issue in mass production for electronic device applications. We report here facile nanowall growth of MoS<sub<2</sub<-MoS<sub<X</sub< using sputter deposition and investigate the electronic properties of the nanowalls. MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls become gradually thicker and taller, with primarily (100)-plane growth directions, with increasing deposition time. Nanowalls combine with nearby walls when a rapid thermal annealing (RTA, 200 °C–500 °C) process is applied. All samples have conventional low-bandgap semiconductor behavior with exponential resistance increase as measurement temperature decreases. The 750 nm-thick MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls have a sheet carrier mobility of up to 2 cm<sup<2</sup<·V<sup<−1</sup<·s<sup<−1</sup< and bulk carrier concentration of ~10<sup<17</sup<–10<sup<19</sup< cm<sup<−3</sup< range depending on RTA temperature. Furthermore, perpendicular field-dependent magnetoresistance at 300 K shows negative magnetoresistance behavior, which displays resistance decay by applying a magnetic field (MR ratio in the −1 % range at 5 T). Interestingly, 400 °C RTA treated samples show a resistance upturn when applying an external magnetic field of more than 3 T. Our research suggests tuneability of MoS<sub<2</sub< nanowall size and mesoscopic electronic transport properties. MoS<sub<2</sub< nanowall crystal growth sputter deposition MoS<sub<2</sub< polycrystal characterization Crystallography Mi-Jin Jin verfasserin aut Jong-Chang Woo verfasserin aut Dong-Pyo Kim verfasserin aut Jungmin Park verfasserin aut Younghun Jo verfasserin aut Gwan-Ha Kim verfasserin aut In Crystals MDPI AG, 2011 11(2021), 4, p 351 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:11 year:2021 number:4, p 351 https://doi.org/10.3390/cryst11040351 kostenfrei https://doaj.org/article/30584de3dc334ab4a4d1ffeff8f33859 kostenfrei https://www.mdpi.com/2073-4352/11/4/351 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 4, p 351
allfields_unstemmed	10.3390/cryst11040351 doi (DE-627)DOAJ086628585 (DE-599)DOAJ30584de3dc334ab4a4d1ffeff8f33859 DE-627 ger DE-627 rakwb eng QD901-999 Doo-Seung Um verfasserin aut Electrical Properties and Thermal Annealing Effects of Polycrystalline MoS<sub<2</sub<-MoS<sub<X</sub< Nanowalls Grown by Sputtering Deposition Method 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Straightforward growth of nanostructured low-bandgap materials is a key issue in mass production for electronic device applications. We report here facile nanowall growth of MoS<sub<2</sub<-MoS<sub<X</sub< using sputter deposition and investigate the electronic properties of the nanowalls. MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls become gradually thicker and taller, with primarily (100)-plane growth directions, with increasing deposition time. Nanowalls combine with nearby walls when a rapid thermal annealing (RTA, 200 °C–500 °C) process is applied. All samples have conventional low-bandgap semiconductor behavior with exponential resistance increase as measurement temperature decreases. The 750 nm-thick MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls have a sheet carrier mobility of up to 2 cm<sup<2</sup<·V<sup<−1</sup<·s<sup<−1</sup< and bulk carrier concentration of ~10<sup<17</sup<–10<sup<19</sup< cm<sup<−3</sup< range depending on RTA temperature. Furthermore, perpendicular field-dependent magnetoresistance at 300 K shows negative magnetoresistance behavior, which displays resistance decay by applying a magnetic field (MR ratio in the −1 % range at 5 T). Interestingly, 400 °C RTA treated samples show a resistance upturn when applying an external magnetic field of more than 3 T. Our research suggests tuneability of MoS<sub<2</sub< nanowall size and mesoscopic electronic transport properties. MoS<sub<2</sub< nanowall crystal growth sputter deposition MoS<sub<2</sub< polycrystal characterization Crystallography Mi-Jin Jin verfasserin aut Jong-Chang Woo verfasserin aut Dong-Pyo Kim verfasserin aut Jungmin Park verfasserin aut Younghun Jo verfasserin aut Gwan-Ha Kim verfasserin aut In Crystals MDPI AG, 2011 11(2021), 4, p 351 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:11 year:2021 number:4, p 351 https://doi.org/10.3390/cryst11040351 kostenfrei https://doaj.org/article/30584de3dc334ab4a4d1ffeff8f33859 kostenfrei https://www.mdpi.com/2073-4352/11/4/351 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 4, p 351
allfieldsGer	10.3390/cryst11040351 doi (DE-627)DOAJ086628585 (DE-599)DOAJ30584de3dc334ab4a4d1ffeff8f33859 DE-627 ger DE-627 rakwb eng QD901-999 Doo-Seung Um verfasserin aut Electrical Properties and Thermal Annealing Effects of Polycrystalline MoS<sub<2</sub<-MoS<sub<X</sub< Nanowalls Grown by Sputtering Deposition Method 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Straightforward growth of nanostructured low-bandgap materials is a key issue in mass production for electronic device applications. We report here facile nanowall growth of MoS<sub<2</sub<-MoS<sub<X</sub< using sputter deposition and investigate the electronic properties of the nanowalls. MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls become gradually thicker and taller, with primarily (100)-plane growth directions, with increasing deposition time. Nanowalls combine with nearby walls when a rapid thermal annealing (RTA, 200 °C–500 °C) process is applied. All samples have conventional low-bandgap semiconductor behavior with exponential resistance increase as measurement temperature decreases. The 750 nm-thick MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls have a sheet carrier mobility of up to 2 cm<sup<2</sup<·V<sup<−1</sup<·s<sup<−1</sup< and bulk carrier concentration of ~10<sup<17</sup<–10<sup<19</sup< cm<sup<−3</sup< range depending on RTA temperature. Furthermore, perpendicular field-dependent magnetoresistance at 300 K shows negative magnetoresistance behavior, which displays resistance decay by applying a magnetic field (MR ratio in the −1 % range at 5 T). Interestingly, 400 °C RTA treated samples show a resistance upturn when applying an external magnetic field of more than 3 T. Our research suggests tuneability of MoS<sub<2</sub< nanowall size and mesoscopic electronic transport properties. MoS<sub<2</sub< nanowall crystal growth sputter deposition MoS<sub<2</sub< polycrystal characterization Crystallography Mi-Jin Jin verfasserin aut Jong-Chang Woo verfasserin aut Dong-Pyo Kim verfasserin aut Jungmin Park verfasserin aut Younghun Jo verfasserin aut Gwan-Ha Kim verfasserin aut In Crystals MDPI AG, 2011 11(2021), 4, p 351 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:11 year:2021 number:4, p 351 https://doi.org/10.3390/cryst11040351 kostenfrei https://doaj.org/article/30584de3dc334ab4a4d1ffeff8f33859 kostenfrei https://www.mdpi.com/2073-4352/11/4/351 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 4, p 351
allfieldsSound	10.3390/cryst11040351 doi (DE-627)DOAJ086628585 (DE-599)DOAJ30584de3dc334ab4a4d1ffeff8f33859 DE-627 ger DE-627 rakwb eng QD901-999 Doo-Seung Um verfasserin aut Electrical Properties and Thermal Annealing Effects of Polycrystalline MoS<sub<2</sub<-MoS<sub<X</sub< Nanowalls Grown by Sputtering Deposition Method 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Straightforward growth of nanostructured low-bandgap materials is a key issue in mass production for electronic device applications. We report here facile nanowall growth of MoS<sub<2</sub<-MoS<sub<X</sub< using sputter deposition and investigate the electronic properties of the nanowalls. MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls become gradually thicker and taller, with primarily (100)-plane growth directions, with increasing deposition time. Nanowalls combine with nearby walls when a rapid thermal annealing (RTA, 200 °C–500 °C) process is applied. All samples have conventional low-bandgap semiconductor behavior with exponential resistance increase as measurement temperature decreases. The 750 nm-thick MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls have a sheet carrier mobility of up to 2 cm<sup<2</sup<·V<sup<−1</sup<·s<sup<−1</sup< and bulk carrier concentration of ~10<sup<17</sup<–10<sup<19</sup< cm<sup<−3</sup< range depending on RTA temperature. Furthermore, perpendicular field-dependent magnetoresistance at 300 K shows negative magnetoresistance behavior, which displays resistance decay by applying a magnetic field (MR ratio in the −1 % range at 5 T). Interestingly, 400 °C RTA treated samples show a resistance upturn when applying an external magnetic field of more than 3 T. Our research suggests tuneability of MoS<sub<2</sub< nanowall size and mesoscopic electronic transport properties. MoS<sub<2</sub< nanowall crystal growth sputter deposition MoS<sub<2</sub< polycrystal characterization Crystallography Mi-Jin Jin verfasserin aut Jong-Chang Woo verfasserin aut Dong-Pyo Kim verfasserin aut Jungmin Park verfasserin aut Younghun Jo verfasserin aut Gwan-Ha Kim verfasserin aut In Crystals MDPI AG, 2011 11(2021), 4, p 351 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:11 year:2021 number:4, p 351 https://doi.org/10.3390/cryst11040351 kostenfrei https://doaj.org/article/30584de3dc334ab4a4d1ffeff8f33859 kostenfrei https://www.mdpi.com/2073-4352/11/4/351 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 4, p 351
language	English
source	In Crystals 11(2021), 4, p 351 volume:11 year:2021 number:4, p 351
sourceStr	In Crystals 11(2021), 4, p 351 volume:11 year:2021 number:4, p 351
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	MoS<sub<2</sub< nanowall crystal growth sputter deposition MoS<sub<2</sub< polycrystal characterization Crystallography
isfreeaccess_bool	true
container_title	Crystals
authorswithroles_txt_mv	Doo-Seung Um @@aut@@ Mi-Jin Jin @@aut@@ Jong-Chang Woo @@aut@@ Dong-Pyo Kim @@aut@@ Jungmin Park @@aut@@ Younghun Jo @@aut@@ Gwan-Ha Kim @@aut@@
publishDateDaySort_date	2021-01-01T00:00:00Z
hierarchy_top_id	718303067
id	DOAJ086628585
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ086628585</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20240412185640.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230311s2021 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.3390/cryst11040351</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ086628585</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJ30584de3dc334ab4a4d1ffeff8f33859</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QD901-999</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Doo-Seung Um</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Electrical Properties and Thermal Annealing Effects of Polycrystalline MoS<sub<2</sub<-MoS<sub<X</sub< Nanowalls Grown by Sputtering Deposition Method</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2021</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Straightforward growth of nanostructured low-bandgap materials is a key issue in mass production for electronic device applications. We report here facile nanowall growth of MoS<sub<2</sub<-MoS<sub<X</sub< using sputter deposition and investigate the electronic properties of the nanowalls. MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls become gradually thicker and taller, with primarily (100)-plane growth directions, with increasing deposition time. Nanowalls combine with nearby walls when a rapid thermal annealing (RTA, 200 °C–500 °C) process is applied. All samples have conventional low-bandgap semiconductor behavior with exponential resistance increase as measurement temperature decreases. The 750 nm-thick MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls have a sheet carrier mobility of up to 2 cm<sup<2</sup<·V<sup<−1</sup<·s<sup<−1</sup< and bulk carrier concentration of ~10<sup<17</sup<–10<sup<19</sup< cm<sup<−3</sup< range depending on RTA temperature. Furthermore, perpendicular field-dependent magnetoresistance at 300 K shows negative magnetoresistance behavior, which displays resistance decay by applying a magnetic field (MR ratio in the −1 % range at 5 T). Interestingly, 400 °C RTA treated samples show a resistance upturn when applying an external magnetic field of more than 3 T. Our research suggests tuneability of MoS<sub<2</sub< nanowall size and mesoscopic electronic transport properties.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MoS<sub<2</sub<</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">nanowall</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">crystal growth</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">sputter deposition</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MoS<sub<2</sub< polycrystal characterization</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Crystallography</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Mi-Jin Jin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Jong-Chang Woo</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Dong-Pyo Kim</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Jungmin Park</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Younghun Jo</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Gwan-Ha Kim</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Crystals</subfield><subfield code="d">MDPI AG, 2011</subfield><subfield code="g">11(2021), 4, p 351</subfield><subfield code="w">(DE-627)718303067</subfield><subfield code="w">(DE-600)2661516-2</subfield><subfield code="x">20734352</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:11</subfield><subfield code="g">year:2021</subfield><subfield code="g">number:4, p 351</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.3390/cryst11040351</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/30584de3dc334ab4a4d1ffeff8f33859</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.mdpi.com/2073-4352/11/4/351</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2073-4352</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">11</subfield><subfield code="j">2021</subfield><subfield code="e">4, p 351</subfield></datafield></record></collection>
callnumber-first	Q - Science
author	Doo-Seung Um
spellingShingle	Doo-Seung Um misc QD901-999 misc MoS<sub<2</sub< misc nanowall misc crystal growth misc sputter deposition misc MoS<sub<2</sub< polycrystal characterization misc Crystallography Electrical Properties and Thermal Annealing Effects of Polycrystalline MoS<sub<2</sub<-MoS<sub<X</sub< Nanowalls Grown by Sputtering Deposition Method
authorStr	Doo-Seung Um
ppnlink_with_tag_str_mv	@@773@@(DE-627)718303067
format	electronic Article
delete_txt_mv	keep
author_role	aut aut aut aut aut aut aut
collection	DOAJ
remote_str	true
callnumber-label	QD901-999
illustrated	Not Illustrated
issn	20734352
topic_title	QD901-999 Electrical Properties and Thermal Annealing Effects of Polycrystalline MoS<sub<2</sub<-MoS<sub<X</sub< Nanowalls Grown by Sputtering Deposition Method MoS<sub<2</sub< nanowall crystal growth sputter deposition MoS<sub<2</sub< polycrystal characterization
topic	misc QD901-999 misc MoS<sub<2</sub< misc nanowall misc crystal growth misc sputter deposition misc MoS<sub<2</sub< polycrystal characterization misc Crystallography
topic_unstemmed	misc QD901-999 misc MoS<sub<2</sub< misc nanowall misc crystal growth misc sputter deposition misc MoS<sub<2</sub< polycrystal characterization misc Crystallography
topic_browse	misc QD901-999 misc MoS<sub<2</sub< misc nanowall misc crystal growth misc sputter deposition misc MoS<sub<2</sub< polycrystal characterization misc Crystallography
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	Crystals
hierarchy_parent_id	718303067
hierarchy_top_title	Crystals
isfreeaccess_txt	true
familylinks_str_mv	(DE-627)718303067 (DE-600)2661516-2
title	Electrical Properties and Thermal Annealing Effects of Polycrystalline MoS<sub<2</sub<-MoS<sub<X</sub< Nanowalls Grown by Sputtering Deposition Method
ctrlnum	(DE-627)DOAJ086628585 (DE-599)DOAJ30584de3dc334ab4a4d1ffeff8f33859
title_full	Electrical Properties and Thermal Annealing Effects of Polycrystalline MoS<sub<2</sub<-MoS<sub<X</sub< Nanowalls Grown by Sputtering Deposition Method
author_sort	Doo-Seung Um
journal	Crystals
journalStr	Crystals
callnumber-first-code	Q
lang_code	eng
isOA_bool	true
recordtype	marc
publishDateSort	2021
contenttype_str_mv	txt
author_browse	Doo-Seung Um Mi-Jin Jin Jong-Chang Woo Dong-Pyo Kim Jungmin Park Younghun Jo Gwan-Ha Kim
container_volume	11
class	QD901-999
format_se	Elektronische Aufsätze
author-letter	Doo-Seung Um
doi_str_mv	10.3390/cryst11040351
author2-role	verfasserin
title_sort	electrical properties and thermal annealing effects of polycrystalline mos<sub<2</sub<-mos<sub<x</sub< nanowalls grown by sputtering deposition method
callnumber	QD901-999
title_auth	Electrical Properties and Thermal Annealing Effects of Polycrystalline MoS<sub<2</sub<-MoS<sub<X</sub< Nanowalls Grown by Sputtering Deposition Method
abstract	Straightforward growth of nanostructured low-bandgap materials is a key issue in mass production for electronic device applications. We report here facile nanowall growth of MoS<sub<2</sub<-MoS<sub<X</sub< using sputter deposition and investigate the electronic properties of the nanowalls. MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls become gradually thicker and taller, with primarily (100)-plane growth directions, with increasing deposition time. Nanowalls combine with nearby walls when a rapid thermal annealing (RTA, 200 °C–500 °C) process is applied. All samples have conventional low-bandgap semiconductor behavior with exponential resistance increase as measurement temperature decreases. The 750 nm-thick MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls have a sheet carrier mobility of up to 2 cm<sup<2</sup<·V<sup<−1</sup<·s<sup<−1</sup< and bulk carrier concentration of ~10<sup<17</sup<–10<sup<19</sup< cm<sup<−3</sup< range depending on RTA temperature. Furthermore, perpendicular field-dependent magnetoresistance at 300 K shows negative magnetoresistance behavior, which displays resistance decay by applying a magnetic field (MR ratio in the −1 % range at 5 T). Interestingly, 400 °C RTA treated samples show a resistance upturn when applying an external magnetic field of more than 3 T. Our research suggests tuneability of MoS<sub<2</sub< nanowall size and mesoscopic electronic transport properties.
abstractGer	Straightforward growth of nanostructured low-bandgap materials is a key issue in mass production for electronic device applications. We report here facile nanowall growth of MoS<sub<2</sub<-MoS<sub<X</sub< using sputter deposition and investigate the electronic properties of the nanowalls. MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls become gradually thicker and taller, with primarily (100)-plane growth directions, with increasing deposition time. Nanowalls combine with nearby walls when a rapid thermal annealing (RTA, 200 °C–500 °C) process is applied. All samples have conventional low-bandgap semiconductor behavior with exponential resistance increase as measurement temperature decreases. The 750 nm-thick MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls have a sheet carrier mobility of up to 2 cm<sup<2</sup<·V<sup<−1</sup<·s<sup<−1</sup< and bulk carrier concentration of ~10<sup<17</sup<–10<sup<19</sup< cm<sup<−3</sup< range depending on RTA temperature. Furthermore, perpendicular field-dependent magnetoresistance at 300 K shows negative magnetoresistance behavior, which displays resistance decay by applying a magnetic field (MR ratio in the −1 % range at 5 T). Interestingly, 400 °C RTA treated samples show a resistance upturn when applying an external magnetic field of more than 3 T. Our research suggests tuneability of MoS<sub<2</sub< nanowall size and mesoscopic electronic transport properties.
abstract_unstemmed	Straightforward growth of nanostructured low-bandgap materials is a key issue in mass production for electronic device applications. We report here facile nanowall growth of MoS<sub<2</sub<-MoS<sub<X</sub< using sputter deposition and investigate the electronic properties of the nanowalls. MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls become gradually thicker and taller, with primarily (100)-plane growth directions, with increasing deposition time. Nanowalls combine with nearby walls when a rapid thermal annealing (RTA, 200 °C–500 °C) process is applied. All samples have conventional low-bandgap semiconductor behavior with exponential resistance increase as measurement temperature decreases. The 750 nm-thick MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls have a sheet carrier mobility of up to 2 cm<sup<2</sup<·V<sup<−1</sup<·s<sup<−1</sup< and bulk carrier concentration of ~10<sup<17</sup<–10<sup<19</sup< cm<sup<−3</sup< range depending on RTA temperature. Furthermore, perpendicular field-dependent magnetoresistance at 300 K shows negative magnetoresistance behavior, which displays resistance decay by applying a magnetic field (MR ratio in the −1 % range at 5 T). Interestingly, 400 °C RTA treated samples show a resistance upturn when applying an external magnetic field of more than 3 T. Our research suggests tuneability of MoS<sub<2</sub< nanowall size and mesoscopic electronic transport properties.
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700
container_issue	4, p 351
title_short	Electrical Properties and Thermal Annealing Effects of Polycrystalline MoS<sub<2</sub<-MoS<sub<X</sub< Nanowalls Grown by Sputtering Deposition Method
url	https://doi.org/10.3390/cryst11040351 https://doaj.org/article/30584de3dc334ab4a4d1ffeff8f33859 https://www.mdpi.com/2073-4352/11/4/351 https://doaj.org/toc/2073-4352
remote_bool	true
author2	Mi-Jin Jin Jong-Chang Woo Dong-Pyo Kim Jungmin Park Younghun Jo Gwan-Ha Kim
author2Str	Mi-Jin Jin Jong-Chang Woo Dong-Pyo Kim Jungmin Park Younghun Jo Gwan-Ha Kim
ppnlink	718303067
callnumber-subject	QD - Chemistry
mediatype_str_mv	c
isOA_txt	true
hochschulschrift_bool	false
doi_str	10.3390/cryst11040351
callnumber-a	QD901-999
up_date	2024-07-03T21:49:55.134Z
_version_	1803596223097077760
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ086628585</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20240412185640.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230311s2021 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.3390/cryst11040351</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ086628585</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJ30584de3dc334ab4a4d1ffeff8f33859</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QD901-999</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Doo-Seung Um</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Electrical Properties and Thermal Annealing Effects of Polycrystalline MoS<sub<2</sub<-MoS<sub<X</sub< Nanowalls Grown by Sputtering Deposition Method</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2021</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Straightforward growth of nanostructured low-bandgap materials is a key issue in mass production for electronic device applications. We report here facile nanowall growth of MoS<sub<2</sub<-MoS<sub<X</sub< using sputter deposition and investigate the electronic properties of the nanowalls. MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls become gradually thicker and taller, with primarily (100)-plane growth directions, with increasing deposition time. Nanowalls combine with nearby walls when a rapid thermal annealing (RTA, 200 °C–500 °C) process is applied. All samples have conventional low-bandgap semiconductor behavior with exponential resistance increase as measurement temperature decreases. The 750 nm-thick MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls have a sheet carrier mobility of up to 2 cm<sup<2</sup<·V<sup<−1</sup<·s<sup<−1</sup< and bulk carrier concentration of ~10<sup<17</sup<–10<sup<19</sup< cm<sup<−3</sup< range depending on RTA temperature. Furthermore, perpendicular field-dependent magnetoresistance at 300 K shows negative magnetoresistance behavior, which displays resistance decay by applying a magnetic field (MR ratio in the −1 % range at 5 T). Interestingly, 400 °C RTA treated samples show a resistance upturn when applying an external magnetic field of more than 3 T. Our research suggests tuneability of MoS<sub<2</sub< nanowall size and mesoscopic electronic transport properties.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MoS<sub<2</sub<</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">nanowall</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">crystal growth</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">sputter deposition</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MoS<sub<2</sub< polycrystal characterization</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Crystallography</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Mi-Jin Jin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Jong-Chang Woo</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Dong-Pyo Kim</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Jungmin Park</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Younghun Jo</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Gwan-Ha Kim</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Crystals</subfield><subfield code="d">MDPI AG, 2011</subfield><subfield code="g">11(2021), 4, p 351</subfield><subfield code="w">(DE-627)718303067</subfield><subfield code="w">(DE-600)2661516-2</subfield><subfield code="x">20734352</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:11</subfield><subfield code="g">year:2021</subfield><subfield code="g">number:4, p 351</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.3390/cryst11040351</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/30584de3dc334ab4a4d1ffeff8f33859</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.mdpi.com/2073-4352/11/4/351</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2073-4352</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">11</subfield><subfield code="j">2021</subfield><subfield code="e">4, p 351</subfield></datafield></record></collection>
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Electrical Properties and Thermal Annealing Effects of Polycrystalline MoS<sub<2</sub<-MoS<sub<X</sub< Nanowalls Grown by Sputtering Deposition Method

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