Electrical Properties and Thermal Annealing Effects of Polycrystalline MoS<sub<2</sub<-MoS<sub<X</sub< Nanowalls Grown by Sputtering Deposition Method
Straightforward growth of nanostructured low-bandgap materials is a key issue in mass production for electronic device applications. We report here facile nanowall growth of MoS<sub<2</sub<-MoS<sub<X</sub< using sputter deposition and investigate the electronic properties of...
Ausführliche Beschreibung
Autor*in: |
Doo-Seung Um [verfasserIn] Mi-Jin Jin [verfasserIn] Jong-Chang Woo [verfasserIn] Dong-Pyo Kim [verfasserIn] Jungmin Park [verfasserIn] Younghun Jo [verfasserIn] Gwan-Ha Kim [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2021 |
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Schlagwörter: |
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Übergeordnetes Werk: |
In: Crystals - MDPI AG, 2011, 11(2021), 4, p 351 |
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Übergeordnetes Werk: |
volume:11 ; year:2021 ; number:4, p 351 |
Links: |
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DOI / URN: |
10.3390/cryst11040351 |
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Katalog-ID: |
DOAJ086628585 |
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10.3390/cryst11040351 doi (DE-627)DOAJ086628585 (DE-599)DOAJ30584de3dc334ab4a4d1ffeff8f33859 DE-627 ger DE-627 rakwb eng QD901-999 Doo-Seung Um verfasserin aut Electrical Properties and Thermal Annealing Effects of Polycrystalline MoS<sub<2</sub<-MoS<sub<X</sub< Nanowalls Grown by Sputtering Deposition Method 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Straightforward growth of nanostructured low-bandgap materials is a key issue in mass production for electronic device applications. We report here facile nanowall growth of MoS<sub<2</sub<-MoS<sub<X</sub< using sputter deposition and investigate the electronic properties of the nanowalls. MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls become gradually thicker and taller, with primarily (100)-plane growth directions, with increasing deposition time. Nanowalls combine with nearby walls when a rapid thermal annealing (RTA, 200 °C–500 °C) process is applied. All samples have conventional low-bandgap semiconductor behavior with exponential resistance increase as measurement temperature decreases. The 750 nm-thick MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls have a sheet carrier mobility of up to 2 cm<sup<2</sup<·V<sup<−1</sup<·s<sup<−1</sup< and bulk carrier concentration of ~10<sup<17</sup<–10<sup<19</sup< cm<sup<−3</sup< range depending on RTA temperature. Furthermore, perpendicular field-dependent magnetoresistance at 300 K shows negative magnetoresistance behavior, which displays resistance decay by applying a magnetic field (MR ratio in the −1 % range at 5 T). Interestingly, 400 °C RTA treated samples show a resistance upturn when applying an external magnetic field of more than 3 T. Our research suggests tuneability of MoS<sub<2</sub< nanowall size and mesoscopic electronic transport properties. MoS<sub<2</sub< nanowall crystal growth sputter deposition MoS<sub<2</sub< polycrystal characterization Crystallography Mi-Jin Jin verfasserin aut Jong-Chang Woo verfasserin aut Dong-Pyo Kim verfasserin aut Jungmin Park verfasserin aut Younghun Jo verfasserin aut Gwan-Ha Kim verfasserin aut In Crystals MDPI AG, 2011 11(2021), 4, p 351 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:11 year:2021 number:4, p 351 https://doi.org/10.3390/cryst11040351 kostenfrei https://doaj.org/article/30584de3dc334ab4a4d1ffeff8f33859 kostenfrei https://www.mdpi.com/2073-4352/11/4/351 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 4, p 351 |
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10.3390/cryst11040351 doi (DE-627)DOAJ086628585 (DE-599)DOAJ30584de3dc334ab4a4d1ffeff8f33859 DE-627 ger DE-627 rakwb eng QD901-999 Doo-Seung Um verfasserin aut Electrical Properties and Thermal Annealing Effects of Polycrystalline MoS<sub<2</sub<-MoS<sub<X</sub< Nanowalls Grown by Sputtering Deposition Method 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Straightforward growth of nanostructured low-bandgap materials is a key issue in mass production for electronic device applications. We report here facile nanowall growth of MoS<sub<2</sub<-MoS<sub<X</sub< using sputter deposition and investigate the electronic properties of the nanowalls. MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls become gradually thicker and taller, with primarily (100)-plane growth directions, with increasing deposition time. Nanowalls combine with nearby walls when a rapid thermal annealing (RTA, 200 °C–500 °C) process is applied. All samples have conventional low-bandgap semiconductor behavior with exponential resistance increase as measurement temperature decreases. The 750 nm-thick MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls have a sheet carrier mobility of up to 2 cm<sup<2</sup<·V<sup<−1</sup<·s<sup<−1</sup< and bulk carrier concentration of ~10<sup<17</sup<–10<sup<19</sup< cm<sup<−3</sup< range depending on RTA temperature. Furthermore, perpendicular field-dependent magnetoresistance at 300 K shows negative magnetoresistance behavior, which displays resistance decay by applying a magnetic field (MR ratio in the −1 % range at 5 T). Interestingly, 400 °C RTA treated samples show a resistance upturn when applying an external magnetic field of more than 3 T. Our research suggests tuneability of MoS<sub<2</sub< nanowall size and mesoscopic electronic transport properties. MoS<sub<2</sub< nanowall crystal growth sputter deposition MoS<sub<2</sub< polycrystal characterization Crystallography Mi-Jin Jin verfasserin aut Jong-Chang Woo verfasserin aut Dong-Pyo Kim verfasserin aut Jungmin Park verfasserin aut Younghun Jo verfasserin aut Gwan-Ha Kim verfasserin aut In Crystals MDPI AG, 2011 11(2021), 4, p 351 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:11 year:2021 number:4, p 351 https://doi.org/10.3390/cryst11040351 kostenfrei https://doaj.org/article/30584de3dc334ab4a4d1ffeff8f33859 kostenfrei https://www.mdpi.com/2073-4352/11/4/351 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 4, p 351 |
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10.3390/cryst11040351 doi (DE-627)DOAJ086628585 (DE-599)DOAJ30584de3dc334ab4a4d1ffeff8f33859 DE-627 ger DE-627 rakwb eng QD901-999 Doo-Seung Um verfasserin aut Electrical Properties and Thermal Annealing Effects of Polycrystalline MoS<sub<2</sub<-MoS<sub<X</sub< Nanowalls Grown by Sputtering Deposition Method 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Straightforward growth of nanostructured low-bandgap materials is a key issue in mass production for electronic device applications. We report here facile nanowall growth of MoS<sub<2</sub<-MoS<sub<X</sub< using sputter deposition and investigate the electronic properties of the nanowalls. MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls become gradually thicker and taller, with primarily (100)-plane growth directions, with increasing deposition time. Nanowalls combine with nearby walls when a rapid thermal annealing (RTA, 200 °C–500 °C) process is applied. All samples have conventional low-bandgap semiconductor behavior with exponential resistance increase as measurement temperature decreases. The 750 nm-thick MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls have a sheet carrier mobility of up to 2 cm<sup<2</sup<·V<sup<−1</sup<·s<sup<−1</sup< and bulk carrier concentration of ~10<sup<17</sup<–10<sup<19</sup< cm<sup<−3</sup< range depending on RTA temperature. Furthermore, perpendicular field-dependent magnetoresistance at 300 K shows negative magnetoresistance behavior, which displays resistance decay by applying a magnetic field (MR ratio in the −1 % range at 5 T). Interestingly, 400 °C RTA treated samples show a resistance upturn when applying an external magnetic field of more than 3 T. Our research suggests tuneability of MoS<sub<2</sub< nanowall size and mesoscopic electronic transport properties. MoS<sub<2</sub< nanowall crystal growth sputter deposition MoS<sub<2</sub< polycrystal characterization Crystallography Mi-Jin Jin verfasserin aut Jong-Chang Woo verfasserin aut Dong-Pyo Kim verfasserin aut Jungmin Park verfasserin aut Younghun Jo verfasserin aut Gwan-Ha Kim verfasserin aut In Crystals MDPI AG, 2011 11(2021), 4, p 351 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:11 year:2021 number:4, p 351 https://doi.org/10.3390/cryst11040351 kostenfrei https://doaj.org/article/30584de3dc334ab4a4d1ffeff8f33859 kostenfrei https://www.mdpi.com/2073-4352/11/4/351 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 4, p 351 |
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10.3390/cryst11040351 doi (DE-627)DOAJ086628585 (DE-599)DOAJ30584de3dc334ab4a4d1ffeff8f33859 DE-627 ger DE-627 rakwb eng QD901-999 Doo-Seung Um verfasserin aut Electrical Properties and Thermal Annealing Effects of Polycrystalline MoS<sub<2</sub<-MoS<sub<X</sub< Nanowalls Grown by Sputtering Deposition Method 2021 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Straightforward growth of nanostructured low-bandgap materials is a key issue in mass production for electronic device applications. We report here facile nanowall growth of MoS<sub<2</sub<-MoS<sub<X</sub< using sputter deposition and investigate the electronic properties of the nanowalls. MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls become gradually thicker and taller, with primarily (100)-plane growth directions, with increasing deposition time. Nanowalls combine with nearby walls when a rapid thermal annealing (RTA, 200 °C–500 °C) process is applied. All samples have conventional low-bandgap semiconductor behavior with exponential resistance increase as measurement temperature decreases. The 750 nm-thick MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls have a sheet carrier mobility of up to 2 cm<sup<2</sup<·V<sup<−1</sup<·s<sup<−1</sup< and bulk carrier concentration of ~10<sup<17</sup<–10<sup<19</sup< cm<sup<−3</sup< range depending on RTA temperature. Furthermore, perpendicular field-dependent magnetoresistance at 300 K shows negative magnetoresistance behavior, which displays resistance decay by applying a magnetic field (MR ratio in the −1 % range at 5 T). Interestingly, 400 °C RTA treated samples show a resistance upturn when applying an external magnetic field of more than 3 T. Our research suggests tuneability of MoS<sub<2</sub< nanowall size and mesoscopic electronic transport properties. MoS<sub<2</sub< nanowall crystal growth sputter deposition MoS<sub<2</sub< polycrystal characterization Crystallography Mi-Jin Jin verfasserin aut Jong-Chang Woo verfasserin aut Dong-Pyo Kim verfasserin aut Jungmin Park verfasserin aut Younghun Jo verfasserin aut Gwan-Ha Kim verfasserin aut In Crystals MDPI AG, 2011 11(2021), 4, p 351 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:11 year:2021 number:4, p 351 https://doi.org/10.3390/cryst11040351 kostenfrei https://doaj.org/article/30584de3dc334ab4a4d1ffeff8f33859 kostenfrei https://www.mdpi.com/2073-4352/11/4/351 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 11 2021 4, p 351 |
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QD901-999 Electrical Properties and Thermal Annealing Effects of Polycrystalline MoS<sub<2</sub<-MoS<sub<X</sub< Nanowalls Grown by Sputtering Deposition Method MoS<sub<2</sub< nanowall crystal growth sputter deposition MoS<sub<2</sub< polycrystal characterization |
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Electrical Properties and Thermal Annealing Effects of Polycrystalline MoS<sub<2</sub<-MoS<sub<X</sub< Nanowalls Grown by Sputtering Deposition Method |
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Straightforward growth of nanostructured low-bandgap materials is a key issue in mass production for electronic device applications. We report here facile nanowall growth of MoS<sub<2</sub<-MoS<sub<X</sub< using sputter deposition and investigate the electronic properties of the nanowalls. MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls become gradually thicker and taller, with primarily (100)-plane growth directions, with increasing deposition time. Nanowalls combine with nearby walls when a rapid thermal annealing (RTA, 200 °C–500 °C) process is applied. All samples have conventional low-bandgap semiconductor behavior with exponential resistance increase as measurement temperature decreases. The 750 nm-thick MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls have a sheet carrier mobility of up to 2 cm<sup<2</sup<·V<sup<−1</sup<·s<sup<−1</sup< and bulk carrier concentration of ~10<sup<17</sup<–10<sup<19</sup< cm<sup<−3</sup< range depending on RTA temperature. Furthermore, perpendicular field-dependent magnetoresistance at 300 K shows negative magnetoresistance behavior, which displays resistance decay by applying a magnetic field (MR ratio in the −1 % range at 5 T). Interestingly, 400 °C RTA treated samples show a resistance upturn when applying an external magnetic field of more than 3 T. Our research suggests tuneability of MoS<sub<2</sub< nanowall size and mesoscopic electronic transport properties. |
abstractGer |
Straightforward growth of nanostructured low-bandgap materials is a key issue in mass production for electronic device applications. We report here facile nanowall growth of MoS<sub<2</sub<-MoS<sub<X</sub< using sputter deposition and investigate the electronic properties of the nanowalls. MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls become gradually thicker and taller, with primarily (100)-plane growth directions, with increasing deposition time. Nanowalls combine with nearby walls when a rapid thermal annealing (RTA, 200 °C–500 °C) process is applied. All samples have conventional low-bandgap semiconductor behavior with exponential resistance increase as measurement temperature decreases. The 750 nm-thick MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls have a sheet carrier mobility of up to 2 cm<sup<2</sup<·V<sup<−1</sup<·s<sup<−1</sup< and bulk carrier concentration of ~10<sup<17</sup<–10<sup<19</sup< cm<sup<−3</sup< range depending on RTA temperature. Furthermore, perpendicular field-dependent magnetoresistance at 300 K shows negative magnetoresistance behavior, which displays resistance decay by applying a magnetic field (MR ratio in the −1 % range at 5 T). Interestingly, 400 °C RTA treated samples show a resistance upturn when applying an external magnetic field of more than 3 T. Our research suggests tuneability of MoS<sub<2</sub< nanowall size and mesoscopic electronic transport properties. |
abstract_unstemmed |
Straightforward growth of nanostructured low-bandgap materials is a key issue in mass production for electronic device applications. We report here facile nanowall growth of MoS<sub<2</sub<-MoS<sub<X</sub< using sputter deposition and investigate the electronic properties of the nanowalls. MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls become gradually thicker and taller, with primarily (100)-plane growth directions, with increasing deposition time. Nanowalls combine with nearby walls when a rapid thermal annealing (RTA, 200 °C–500 °C) process is applied. All samples have conventional low-bandgap semiconductor behavior with exponential resistance increase as measurement temperature decreases. The 750 nm-thick MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls have a sheet carrier mobility of up to 2 cm<sup<2</sup<·V<sup<−1</sup<·s<sup<−1</sup< and bulk carrier concentration of ~10<sup<17</sup<–10<sup<19</sup< cm<sup<−3</sup< range depending on RTA temperature. Furthermore, perpendicular field-dependent magnetoresistance at 300 K shows negative magnetoresistance behavior, which displays resistance decay by applying a magnetic field (MR ratio in the −1 % range at 5 T). Interestingly, 400 °C RTA treated samples show a resistance upturn when applying an external magnetic field of more than 3 T. Our research suggests tuneability of MoS<sub<2</sub< nanowall size and mesoscopic electronic transport properties. |
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Electrical Properties and Thermal Annealing Effects of Polycrystalline MoS<sub<2</sub<-MoS<sub<X</sub< Nanowalls Grown by Sputtering Deposition Method |
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We report here facile nanowall growth of MoS<sub<2</sub<-MoS<sub<X</sub< using sputter deposition and investigate the electronic properties of the nanowalls. MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls become gradually thicker and taller, with primarily (100)-plane growth directions, with increasing deposition time. Nanowalls combine with nearby walls when a rapid thermal annealing (RTA, 200 °C–500 °C) process is applied. All samples have conventional low-bandgap semiconductor behavior with exponential resistance increase as measurement temperature decreases. The 750 nm-thick MoS<sub<2</sub<-MoS<sub<X</sub< nanowalls have a sheet carrier mobility of up to 2 cm<sup<2</sup<·V<sup<−1</sup<·s<sup<−1</sup< and bulk carrier concentration of ~10<sup<17</sup<–10<sup<19</sup< cm<sup<−3</sup< range depending on RTA temperature. Furthermore, perpendicular field-dependent magnetoresistance at 300 K shows negative magnetoresistance behavior, which displays resistance decay by applying a magnetic field (MR ratio in the −1 % range at 5 T). Interestingly, 400 °C RTA treated samples show a resistance upturn when applying an external magnetic field of more than 3 T. 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