Microfluidic Approach for Lead Halide Perovskite Flexible Phototransistors

Lead halide perovskites possess outstanding optical characteristics that can be employed in the fabrication of phototransistors. However, due to low current modulation at room temperature, sensitivity to the ambient environment, lack of patterning techniques and low carrier mobility of polycrystalli...
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Autor*in:	Fatemeh Khorramshahi [verfasserIn] Arash Takshi [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2020

Schlagwörter:	perovskite laser engraving phototransistor

Übergeordnetes Werk:	In: Electronics - MDPI AG, 2013, 9(2020), 11, p 1852
Übergeordnetes Werk:	volume:9 ; year:2020 ; number:11, p 1852

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/electronics9111852

Katalog-ID:	DOAJ086703080

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spelling	10.3390/electronics9111852 doi (DE-627)DOAJ086703080 (DE-599)DOAJ65143ac308d44ea99b3aa16a5db1f614 DE-627 ger DE-627 rakwb eng TK7800-8360 Fatemeh Khorramshahi verfasserin aut Microfluidic Approach for Lead Halide Perovskite Flexible Phototransistors 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Lead halide perovskites possess outstanding optical characteristics that can be employed in the fabrication of phototransistors. However, due to low current modulation at room temperature, sensitivity to the ambient environment, lack of patterning techniques and low carrier mobility of polycrystalline form, investigation in perovskite phototransistors has been limited to rigid substrates such as silicon and glass to improve the film quality. Here, we report on room temperature current modulation in a methylammonium lead iodide perovskite (MAPbI<sub<3</sub<) flexible transistor made by an extremely cheap and facile fabrication process. The proposed phototransistor has the top-gate configuration with a lateral drain–channel–source structure. The device performed in the linear and saturation regions both in the dark and under white light in different current ranges according to the illumination conditions. The transistor showed p-type transport characteristics and the field effect mobility of the device was calculated to be ~1.7 cm<sup<2</sup< V<sup<−1</sup< s<sup<−1</sup<. This study is expected to contribute to the development of MAPbI<sub<3</sub< flexible phototransistors. perovskite laser engraving phototransistor Electronics Arash Takshi verfasserin aut In Electronics MDPI AG, 2013 9(2020), 11, p 1852 (DE-627)718626478 (DE-600)2662127-7 20799292 nnns volume:9 year:2020 number:11, p 1852 https://doi.org/10.3390/electronics9111852 kostenfrei https://doaj.org/article/65143ac308d44ea99b3aa16a5db1f614 kostenfrei https://www.mdpi.com/2079-9292/9/11/1852 kostenfrei https://doaj.org/toc/2079-9292 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2020 11, p 1852
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allfieldsSound	10.3390/electronics9111852 doi (DE-627)DOAJ086703080 (DE-599)DOAJ65143ac308d44ea99b3aa16a5db1f614 DE-627 ger DE-627 rakwb eng TK7800-8360 Fatemeh Khorramshahi verfasserin aut Microfluidic Approach for Lead Halide Perovskite Flexible Phototransistors 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Lead halide perovskites possess outstanding optical characteristics that can be employed in the fabrication of phototransistors. However, due to low current modulation at room temperature, sensitivity to the ambient environment, lack of patterning techniques and low carrier mobility of polycrystalline form, investigation in perovskite phototransistors has been limited to rigid substrates such as silicon and glass to improve the film quality. Here, we report on room temperature current modulation in a methylammonium lead iodide perovskite (MAPbI<sub<3</sub<) flexible transistor made by an extremely cheap and facile fabrication process. The proposed phototransistor has the top-gate configuration with a lateral drain–channel–source structure. The device performed in the linear and saturation regions both in the dark and under white light in different current ranges according to the illumination conditions. The transistor showed p-type transport characteristics and the field effect mobility of the device was calculated to be ~1.7 cm<sup<2</sup< V<sup<−1</sup< s<sup<−1</sup<. This study is expected to contribute to the development of MAPbI<sub<3</sub< flexible phototransistors. perovskite laser engraving phototransistor Electronics Arash Takshi verfasserin aut In Electronics MDPI AG, 2013 9(2020), 11, p 1852 (DE-627)718626478 (DE-600)2662127-7 20799292 nnns volume:9 year:2020 number:11, p 1852 https://doi.org/10.3390/electronics9111852 kostenfrei https://doaj.org/article/65143ac308d44ea99b3aa16a5db1f614 kostenfrei https://www.mdpi.com/2079-9292/9/11/1852 kostenfrei https://doaj.org/toc/2079-9292 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2020 11, p 1852
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source	In Electronics 9(2020), 11, p 1852 volume:9 year:2020 number:11, p 1852
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authorswithroles_txt_mv	Fatemeh Khorramshahi @@aut@@ Arash Takshi @@aut@@
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callnumber-first	T - Technology
author	Fatemeh Khorramshahi
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topic_title	TK7800-8360 Microfluidic Approach for Lead Halide Perovskite Flexible Phototransistors perovskite laser engraving phototransistor
topic	misc TK7800-8360 misc perovskite misc laser engraving misc phototransistor misc Electronics
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title	Microfluidic Approach for Lead Halide Perovskite Flexible Phototransistors
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title_sort	microfluidic approach for lead halide perovskite flexible phototransistors
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title_auth	Microfluidic Approach for Lead Halide Perovskite Flexible Phototransistors
abstract	Lead halide perovskites possess outstanding optical characteristics that can be employed in the fabrication of phototransistors. However, due to low current modulation at room temperature, sensitivity to the ambient environment, lack of patterning techniques and low carrier mobility of polycrystalline form, investigation in perovskite phototransistors has been limited to rigid substrates such as silicon and glass to improve the film quality. Here, we report on room temperature current modulation in a methylammonium lead iodide perovskite (MAPbI<sub<3</sub<) flexible transistor made by an extremely cheap and facile fabrication process. The proposed phototransistor has the top-gate configuration with a lateral drain–channel–source structure. The device performed in the linear and saturation regions both in the dark and under white light in different current ranges according to the illumination conditions. The transistor showed p-type transport characteristics and the field effect mobility of the device was calculated to be ~1.7 cm<sup<2</sup< V<sup<−1</sup< s<sup<−1</sup<. This study is expected to contribute to the development of MAPbI<sub<3</sub< flexible phototransistors.
abstractGer	Lead halide perovskites possess outstanding optical characteristics that can be employed in the fabrication of phototransistors. However, due to low current modulation at room temperature, sensitivity to the ambient environment, lack of patterning techniques and low carrier mobility of polycrystalline form, investigation in perovskite phototransistors has been limited to rigid substrates such as silicon and glass to improve the film quality. Here, we report on room temperature current modulation in a methylammonium lead iodide perovskite (MAPbI<sub<3</sub<) flexible transistor made by an extremely cheap and facile fabrication process. The proposed phototransistor has the top-gate configuration with a lateral drain–channel–source structure. The device performed in the linear and saturation regions both in the dark and under white light in different current ranges according to the illumination conditions. The transistor showed p-type transport characteristics and the field effect mobility of the device was calculated to be ~1.7 cm<sup<2</sup< V<sup<−1</sup< s<sup<−1</sup<. This study is expected to contribute to the development of MAPbI<sub<3</sub< flexible phototransistors.
abstract_unstemmed	Lead halide perovskites possess outstanding optical characteristics that can be employed in the fabrication of phototransistors. However, due to low current modulation at room temperature, sensitivity to the ambient environment, lack of patterning techniques and low carrier mobility of polycrystalline form, investigation in perovskite phototransistors has been limited to rigid substrates such as silicon and glass to improve the film quality. Here, we report on room temperature current modulation in a methylammonium lead iodide perovskite (MAPbI<sub<3</sub<) flexible transistor made by an extremely cheap and facile fabrication process. The proposed phototransistor has the top-gate configuration with a lateral drain–channel–source structure. The device performed in the linear and saturation regions both in the dark and under white light in different current ranges according to the illumination conditions. The transistor showed p-type transport characteristics and the field effect mobility of the device was calculated to be ~1.7 cm<sup<2</sup< V<sup<−1</sup< s<sup<−1</sup<. This study is expected to contribute to the development of MAPbI<sub<3</sub< flexible phototransistors.
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title_short	Microfluidic Approach for Lead Halide Perovskite Flexible Phototransistors
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Microfluidic Approach for Lead Halide Perovskite Flexible Phototransistors

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Zugang & Verfügbarkeit

Vorhandene Bände

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