An RF Approach to Modelling Gallium Nitride Power Devices Using Parasitic Extraction

This paper begins with a comprehensive review into the existing GaN device models. Secondly, it identifies the need for a more accurate GaN switching model. A simple practical process based on radio frequency techniques using Vector Network Analyser is introduced in this paper as an original contrib...
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Autor*in:	Nikita Hari [verfasserIn] Sridhar Ramasamy [verfasserIn] Mominul Ahsan [verfasserIn] Julfikar Haider [verfasserIn] Eduardo M. G. Rodrigues [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2020

Schlagwörter:	gallium nitride power electronics power device parasitics device modelling switching model

Übergeordnetes Werk:	In: Electronics - MDPI AG, 2013, 9(2020), 12, p 2007
Übergeordnetes Werk:	volume:9 ; year:2020 ; number:12, p 2007

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/electronics9122007

Katalog-ID:	DOAJ086721976

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allfields	10.3390/electronics9122007 doi (DE-627)DOAJ086721976 (DE-599)DOAJda02b552de4b431b810c5a2b47333b29 DE-627 ger DE-627 rakwb eng TK7800-8360 Nikita Hari verfasserin aut An RF Approach to Modelling Gallium Nitride Power Devices Using Parasitic Extraction 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper begins with a comprehensive review into the existing GaN device models. Secondly, it identifies the need for a more accurate GaN switching model. A simple practical process based on radio frequency techniques using Vector Network Analyser is introduced in this paper as an original contribution. It was applied to extract the impedances of the GaN device to develop an efficient behavioural model. The switching behaviour of the model was validated using both simulation and real time double pulse test experiments at 500 V, 15 A conditions. The proposed model is much easier for power designers to handle, without the need for knowledge about the physics or geometry of the device. The proposed model for Transphorm GaN HEMT was found to be 95.2% more accurate when compared to the existing LT-Spice manufacturer model. This work additionally highlights the need to adopt established RF techniques into power electronics to reduce the learning curve while dealing with these novel high-speed switching devices. gallium nitride power electronics power device parasitics device modelling switching model Electronics Sridhar Ramasamy verfasserin aut Mominul Ahsan verfasserin aut Julfikar Haider verfasserin aut Eduardo M. G. Rodrigues verfasserin aut In Electronics MDPI AG, 2013 9(2020), 12, p 2007 (DE-627)718626478 (DE-600)2662127-7 20799292 nnns volume:9 year:2020 number:12, p 2007 https://doi.org/10.3390/electronics9122007 kostenfrei https://doaj.org/article/da02b552de4b431b810c5a2b47333b29 kostenfrei https://www.mdpi.com/2079-9292/9/12/2007 kostenfrei https://doaj.org/toc/2079-9292 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2020 12, p 2007
spelling	10.3390/electronics9122007 doi (DE-627)DOAJ086721976 (DE-599)DOAJda02b552de4b431b810c5a2b47333b29 DE-627 ger DE-627 rakwb eng TK7800-8360 Nikita Hari verfasserin aut An RF Approach to Modelling Gallium Nitride Power Devices Using Parasitic Extraction 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper begins with a comprehensive review into the existing GaN device models. Secondly, it identifies the need for a more accurate GaN switching model. A simple practical process based on radio frequency techniques using Vector Network Analyser is introduced in this paper as an original contribution. It was applied to extract the impedances of the GaN device to develop an efficient behavioural model. The switching behaviour of the model was validated using both simulation and real time double pulse test experiments at 500 V, 15 A conditions. The proposed model is much easier for power designers to handle, without the need for knowledge about the physics or geometry of the device. The proposed model for Transphorm GaN HEMT was found to be 95.2% more accurate when compared to the existing LT-Spice manufacturer model. This work additionally highlights the need to adopt established RF techniques into power electronics to reduce the learning curve while dealing with these novel high-speed switching devices. gallium nitride power electronics power device parasitics device modelling switching model Electronics Sridhar Ramasamy verfasserin aut Mominul Ahsan verfasserin aut Julfikar Haider verfasserin aut Eduardo M. G. Rodrigues verfasserin aut In Electronics MDPI AG, 2013 9(2020), 12, p 2007 (DE-627)718626478 (DE-600)2662127-7 20799292 nnns volume:9 year:2020 number:12, p 2007 https://doi.org/10.3390/electronics9122007 kostenfrei https://doaj.org/article/da02b552de4b431b810c5a2b47333b29 kostenfrei https://www.mdpi.com/2079-9292/9/12/2007 kostenfrei https://doaj.org/toc/2079-9292 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2020 12, p 2007
allfields_unstemmed	10.3390/electronics9122007 doi (DE-627)DOAJ086721976 (DE-599)DOAJda02b552de4b431b810c5a2b47333b29 DE-627 ger DE-627 rakwb eng TK7800-8360 Nikita Hari verfasserin aut An RF Approach to Modelling Gallium Nitride Power Devices Using Parasitic Extraction 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper begins with a comprehensive review into the existing GaN device models. Secondly, it identifies the need for a more accurate GaN switching model. A simple practical process based on radio frequency techniques using Vector Network Analyser is introduced in this paper as an original contribution. It was applied to extract the impedances of the GaN device to develop an efficient behavioural model. The switching behaviour of the model was validated using both simulation and real time double pulse test experiments at 500 V, 15 A conditions. The proposed model is much easier for power designers to handle, without the need for knowledge about the physics or geometry of the device. The proposed model for Transphorm GaN HEMT was found to be 95.2% more accurate when compared to the existing LT-Spice manufacturer model. This work additionally highlights the need to adopt established RF techniques into power electronics to reduce the learning curve while dealing with these novel high-speed switching devices. gallium nitride power electronics power device parasitics device modelling switching model Electronics Sridhar Ramasamy verfasserin aut Mominul Ahsan verfasserin aut Julfikar Haider verfasserin aut Eduardo M. G. Rodrigues verfasserin aut In Electronics MDPI AG, 2013 9(2020), 12, p 2007 (DE-627)718626478 (DE-600)2662127-7 20799292 nnns volume:9 year:2020 number:12, p 2007 https://doi.org/10.3390/electronics9122007 kostenfrei https://doaj.org/article/da02b552de4b431b810c5a2b47333b29 kostenfrei https://www.mdpi.com/2079-9292/9/12/2007 kostenfrei https://doaj.org/toc/2079-9292 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2020 12, p 2007
allfieldsGer	10.3390/electronics9122007 doi (DE-627)DOAJ086721976 (DE-599)DOAJda02b552de4b431b810c5a2b47333b29 DE-627 ger DE-627 rakwb eng TK7800-8360 Nikita Hari verfasserin aut An RF Approach to Modelling Gallium Nitride Power Devices Using Parasitic Extraction 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper begins with a comprehensive review into the existing GaN device models. Secondly, it identifies the need for a more accurate GaN switching model. A simple practical process based on radio frequency techniques using Vector Network Analyser is introduced in this paper as an original contribution. It was applied to extract the impedances of the GaN device to develop an efficient behavioural model. The switching behaviour of the model was validated using both simulation and real time double pulse test experiments at 500 V, 15 A conditions. The proposed model is much easier for power designers to handle, without the need for knowledge about the physics or geometry of the device. The proposed model for Transphorm GaN HEMT was found to be 95.2% more accurate when compared to the existing LT-Spice manufacturer model. This work additionally highlights the need to adopt established RF techniques into power electronics to reduce the learning curve while dealing with these novel high-speed switching devices. gallium nitride power electronics power device parasitics device modelling switching model Electronics Sridhar Ramasamy verfasserin aut Mominul Ahsan verfasserin aut Julfikar Haider verfasserin aut Eduardo M. G. Rodrigues verfasserin aut In Electronics MDPI AG, 2013 9(2020), 12, p 2007 (DE-627)718626478 (DE-600)2662127-7 20799292 nnns volume:9 year:2020 number:12, p 2007 https://doi.org/10.3390/electronics9122007 kostenfrei https://doaj.org/article/da02b552de4b431b810c5a2b47333b29 kostenfrei https://www.mdpi.com/2079-9292/9/12/2007 kostenfrei https://doaj.org/toc/2079-9292 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2020 12, p 2007
allfieldsSound	10.3390/electronics9122007 doi (DE-627)DOAJ086721976 (DE-599)DOAJda02b552de4b431b810c5a2b47333b29 DE-627 ger DE-627 rakwb eng TK7800-8360 Nikita Hari verfasserin aut An RF Approach to Modelling Gallium Nitride Power Devices Using Parasitic Extraction 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper begins with a comprehensive review into the existing GaN device models. Secondly, it identifies the need for a more accurate GaN switching model. A simple practical process based on radio frequency techniques using Vector Network Analyser is introduced in this paper as an original contribution. It was applied to extract the impedances of the GaN device to develop an efficient behavioural model. The switching behaviour of the model was validated using both simulation and real time double pulse test experiments at 500 V, 15 A conditions. The proposed model is much easier for power designers to handle, without the need for knowledge about the physics or geometry of the device. The proposed model for Transphorm GaN HEMT was found to be 95.2% more accurate when compared to the existing LT-Spice manufacturer model. This work additionally highlights the need to adopt established RF techniques into power electronics to reduce the learning curve while dealing with these novel high-speed switching devices. gallium nitride power electronics power device parasitics device modelling switching model Electronics Sridhar Ramasamy verfasserin aut Mominul Ahsan verfasserin aut Julfikar Haider verfasserin aut Eduardo M. G. Rodrigues verfasserin aut In Electronics MDPI AG, 2013 9(2020), 12, p 2007 (DE-627)718626478 (DE-600)2662127-7 20799292 nnns volume:9 year:2020 number:12, p 2007 https://doi.org/10.3390/electronics9122007 kostenfrei https://doaj.org/article/da02b552de4b431b810c5a2b47333b29 kostenfrei https://www.mdpi.com/2079-9292/9/12/2007 kostenfrei https://doaj.org/toc/2079-9292 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 9 2020 12, p 2007
language	English
source	In Electronics 9(2020), 12, p 2007 volume:9 year:2020 number:12, p 2007
sourceStr	In Electronics 9(2020), 12, p 2007 volume:9 year:2020 number:12, p 2007
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institution	findex.gbv.de
topic_facet	gallium nitride power electronics power device parasitics device modelling switching model Electronics
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authorswithroles_txt_mv	Nikita Hari @@aut@@ Sridhar Ramasamy @@aut@@ Mominul Ahsan @@aut@@ Julfikar Haider @@aut@@ Eduardo M. G. Rodrigues @@aut@@
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callnumber-first	T - Technology
author	Nikita Hari
spellingShingle	Nikita Hari misc TK7800-8360 misc gallium nitride misc power electronics misc power device misc parasitics misc device modelling misc switching model misc Electronics An RF Approach to Modelling Gallium Nitride Power Devices Using Parasitic Extraction
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topic_title	TK7800-8360 An RF Approach to Modelling Gallium Nitride Power Devices Using Parasitic Extraction gallium nitride power electronics power device parasitics device modelling switching model
topic	misc TK7800-8360 misc gallium nitride misc power electronics misc power device misc parasitics misc device modelling misc switching model misc Electronics
topic_unstemmed	misc TK7800-8360 misc gallium nitride misc power electronics misc power device misc parasitics misc device modelling misc switching model misc Electronics
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title	An RF Approach to Modelling Gallium Nitride Power Devices Using Parasitic Extraction
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title_full	An RF Approach to Modelling Gallium Nitride Power Devices Using Parasitic Extraction
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author_browse	Nikita Hari Sridhar Ramasamy Mominul Ahsan Julfikar Haider Eduardo M. G. Rodrigues
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title_sort	rf approach to modelling gallium nitride power devices using parasitic extraction
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title_auth	An RF Approach to Modelling Gallium Nitride Power Devices Using Parasitic Extraction
abstract	This paper begins with a comprehensive review into the existing GaN device models. Secondly, it identifies the need for a more accurate GaN switching model. A simple practical process based on radio frequency techniques using Vector Network Analyser is introduced in this paper as an original contribution. It was applied to extract the impedances of the GaN device to develop an efficient behavioural model. The switching behaviour of the model was validated using both simulation and real time double pulse test experiments at 500 V, 15 A conditions. The proposed model is much easier for power designers to handle, without the need for knowledge about the physics or geometry of the device. The proposed model for Transphorm GaN HEMT was found to be 95.2% more accurate when compared to the existing LT-Spice manufacturer model. This work additionally highlights the need to adopt established RF techniques into power electronics to reduce the learning curve while dealing with these novel high-speed switching devices.
abstractGer	This paper begins with a comprehensive review into the existing GaN device models. Secondly, it identifies the need for a more accurate GaN switching model. A simple practical process based on radio frequency techniques using Vector Network Analyser is introduced in this paper as an original contribution. It was applied to extract the impedances of the GaN device to develop an efficient behavioural model. The switching behaviour of the model was validated using both simulation and real time double pulse test experiments at 500 V, 15 A conditions. The proposed model is much easier for power designers to handle, without the need for knowledge about the physics or geometry of the device. The proposed model for Transphorm GaN HEMT was found to be 95.2% more accurate when compared to the existing LT-Spice manufacturer model. This work additionally highlights the need to adopt established RF techniques into power electronics to reduce the learning curve while dealing with these novel high-speed switching devices.
abstract_unstemmed	This paper begins with a comprehensive review into the existing GaN device models. Secondly, it identifies the need for a more accurate GaN switching model. A simple practical process based on radio frequency techniques using Vector Network Analyser is introduced in this paper as an original contribution. It was applied to extract the impedances of the GaN device to develop an efficient behavioural model. The switching behaviour of the model was validated using both simulation and real time double pulse test experiments at 500 V, 15 A conditions. The proposed model is much easier for power designers to handle, without the need for knowledge about the physics or geometry of the device. The proposed model for Transphorm GaN HEMT was found to be 95.2% more accurate when compared to the existing LT-Spice manufacturer model. This work additionally highlights the need to adopt established RF techniques into power electronics to reduce the learning curve while dealing with these novel high-speed switching devices.
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container_issue	12, p 2007
title_short	An RF Approach to Modelling Gallium Nitride Power Devices Using Parasitic Extraction
url	https://doi.org/10.3390/electronics9122007 https://doaj.org/article/da02b552de4b431b810c5a2b47333b29 https://www.mdpi.com/2079-9292/9/12/2007 https://doaj.org/toc/2079-9292
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