Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator

Recently, we reported that device performance degradation mechanisms, which are generated by the γ-ray irradiation in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs), use extremely thin gate insulators. When the γ-ray was radiated, the total ionizing dose (TID) effects were generated and the device performance deteriorated. In this work, we investigated the device property alteration and its mechanisms, which were caused by the proton irradiation in GaN-based MIS-HEMTs for the 5 nm-thick Si<sub<3</sub<N<sub<4</sub< and HfO<sub<2</sub< gate insulator. The device property, such as threshold voltage, drain current, and transconductance varied by the proton irradiation. When the 5 nm-thick HfO<sub<2</sub< layer was employed for the gate insulator, the threshold voltage shift was larger than that of the 5 nm-thick Si<sub<3</sub<N<sub<4</sub< gate insulator, despite the HfO<sub<2</sub< gate insulator exhibiting better radiation resistance compared to the Si<sub<3</sub<N<sub<4</sub< gate insulator. On the other hand, the drain current and transconductance degradation were less for the 5 nm-thick HfO<sub<2</sub< gate insulator. Unlike the γ-ray irradiation, our systematic research included pulse-mode stress measurements and carrier mobility extraction and revealed that the TID and displacement damage (DD) effects were simultaneously generated by the proton irradiation in GaN-based MIS-HEMTs. The degree of the device property alteration was determined by the competition or superposition of the TID and DD effects for the threshold voltage shift and drain current and transconductance deterioration, respectively. The device property alteration was diminished due to the reduction of the linear energy transfer with increasing irradiated proton energy. We also studied the frequency performance degradation that corresponded to the irradiated proton energy in GaN-based MIS-HEMTs using an extremely thin gate insulator. Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Sung-Jae Chang [verfasserIn] Dong-Seok Kim [verfasserIn] Tae-Woo Kim [verfasserIn] Youngho Bae [verfasserIn] Hyun-Wook Jung [verfasserIn] Il-Gyu Choi [verfasserIn] Youn-Sub Noh [verfasserIn] Sang-Heung Lee [verfasserIn] Seong-Il Kim [verfasserIn] Ho-Kyun Ahn [verfasserIn] Dong-Min Kang [verfasserIn] Jong-Won Lim [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	GaN Si HfO gate insulator MIS-HEMT total ionizing dose effects

Übergeordnetes Werk:	In: Nanomaterials - MDPI AG, 2012, 13(2023), 5, p 898
Übergeordnetes Werk:	volume:13 ; year:2023 ; number:5, p 898

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/nano13050898

Katalog-ID:	DOAJ087984571

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allfields	10.3390/nano13050898 doi (DE-627)DOAJ087984571 (DE-599)DOAJ3142430887454ec1bd26ee450c90f97a DE-627 ger DE-627 rakwb eng QD1-999 Sung-Jae Chang verfasserin aut Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Recently, we reported that device performance degradation mechanisms, which are generated by the γ-ray irradiation in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs), use extremely thin gate insulators. When the γ-ray was radiated, the total ionizing dose (TID) effects were generated and the device performance deteriorated. In this work, we investigated the device property alteration and its mechanisms, which were caused by the proton irradiation in GaN-based MIS-HEMTs for the 5 nm-thick Si<sub<3</sub<N<sub<4</sub< and HfO<sub<2</sub< gate insulator. The device property, such as threshold voltage, drain current, and transconductance varied by the proton irradiation. When the 5 nm-thick HfO<sub<2</sub< layer was employed for the gate insulator, the threshold voltage shift was larger than that of the 5 nm-thick Si<sub<3</sub<N<sub<4</sub< gate insulator, despite the HfO<sub<2</sub< gate insulator exhibiting better radiation resistance compared to the Si<sub<3</sub<N<sub<4</sub< gate insulator. On the other hand, the drain current and transconductance degradation were less for the 5 nm-thick HfO<sub<2</sub< gate insulator. Unlike the γ-ray irradiation, our systematic research included pulse-mode stress measurements and carrier mobility extraction and revealed that the TID and displacement damage (DD) effects were simultaneously generated by the proton irradiation in GaN-based MIS-HEMTs. The degree of the device property alteration was determined by the competition or superposition of the TID and DD effects for the threshold voltage shift and drain current and transconductance deterioration, respectively. The device property alteration was diminished due to the reduction of the linear energy transfer with increasing irradiated proton energy. We also studied the frequency performance degradation that corresponded to the irradiated proton energy in GaN-based MIS-HEMTs using an extremely thin gate insulator. GaN Si<sub<3</sub<N<sub<4</sub< HfO<sub<2</sub< gate insulator MIS-HEMT total ionizing dose effects Chemistry Dong-Seok Kim verfasserin aut Tae-Woo Kim verfasserin aut Youngho Bae verfasserin aut Hyun-Wook Jung verfasserin aut Il-Gyu Choi verfasserin aut Youn-Sub Noh verfasserin aut Sang-Heung Lee verfasserin aut Seong-Il Kim verfasserin aut Ho-Kyun Ahn verfasserin aut Dong-Min Kang verfasserin aut Jong-Won Lim verfasserin aut In Nanomaterials MDPI AG, 2012 13(2023), 5, p 898 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:13 year:2023 number:5, p 898 https://doi.org/10.3390/nano13050898 kostenfrei https://doaj.org/article/3142430887454ec1bd26ee450c90f97a kostenfrei https://www.mdpi.com/2079-4991/13/5/898 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2023 5, p 898
spelling	10.3390/nano13050898 doi (DE-627)DOAJ087984571 (DE-599)DOAJ3142430887454ec1bd26ee450c90f97a DE-627 ger DE-627 rakwb eng QD1-999 Sung-Jae Chang verfasserin aut Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Recently, we reported that device performance degradation mechanisms, which are generated by the γ-ray irradiation in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs), use extremely thin gate insulators. When the γ-ray was radiated, the total ionizing dose (TID) effects were generated and the device performance deteriorated. In this work, we investigated the device property alteration and its mechanisms, which were caused by the proton irradiation in GaN-based MIS-HEMTs for the 5 nm-thick Si<sub<3</sub<N<sub<4</sub< and HfO<sub<2</sub< gate insulator. The device property, such as threshold voltage, drain current, and transconductance varied by the proton irradiation. When the 5 nm-thick HfO<sub<2</sub< layer was employed for the gate insulator, the threshold voltage shift was larger than that of the 5 nm-thick Si<sub<3</sub<N<sub<4</sub< gate insulator, despite the HfO<sub<2</sub< gate insulator exhibiting better radiation resistance compared to the Si<sub<3</sub<N<sub<4</sub< gate insulator. On the other hand, the drain current and transconductance degradation were less for the 5 nm-thick HfO<sub<2</sub< gate insulator. Unlike the γ-ray irradiation, our systematic research included pulse-mode stress measurements and carrier mobility extraction and revealed that the TID and displacement damage (DD) effects were simultaneously generated by the proton irradiation in GaN-based MIS-HEMTs. The degree of the device property alteration was determined by the competition or superposition of the TID and DD effects for the threshold voltage shift and drain current and transconductance deterioration, respectively. The device property alteration was diminished due to the reduction of the linear energy transfer with increasing irradiated proton energy. We also studied the frequency performance degradation that corresponded to the irradiated proton energy in GaN-based MIS-HEMTs using an extremely thin gate insulator. GaN Si<sub<3</sub<N<sub<4</sub< HfO<sub<2</sub< gate insulator MIS-HEMT total ionizing dose effects Chemistry Dong-Seok Kim verfasserin aut Tae-Woo Kim verfasserin aut Youngho Bae verfasserin aut Hyun-Wook Jung verfasserin aut Il-Gyu Choi verfasserin aut Youn-Sub Noh verfasserin aut Sang-Heung Lee verfasserin aut Seong-Il Kim verfasserin aut Ho-Kyun Ahn verfasserin aut Dong-Min Kang verfasserin aut Jong-Won Lim verfasserin aut In Nanomaterials MDPI AG, 2012 13(2023), 5, p 898 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:13 year:2023 number:5, p 898 https://doi.org/10.3390/nano13050898 kostenfrei https://doaj.org/article/3142430887454ec1bd26ee450c90f97a kostenfrei https://www.mdpi.com/2079-4991/13/5/898 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2023 5, p 898
allfields_unstemmed	10.3390/nano13050898 doi (DE-627)DOAJ087984571 (DE-599)DOAJ3142430887454ec1bd26ee450c90f97a DE-627 ger DE-627 rakwb eng QD1-999 Sung-Jae Chang verfasserin aut Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Recently, we reported that device performance degradation mechanisms, which are generated by the γ-ray irradiation in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs), use extremely thin gate insulators. When the γ-ray was radiated, the total ionizing dose (TID) effects were generated and the device performance deteriorated. In this work, we investigated the device property alteration and its mechanisms, which were caused by the proton irradiation in GaN-based MIS-HEMTs for the 5 nm-thick Si<sub<3</sub<N<sub<4</sub< and HfO<sub<2</sub< gate insulator. The device property, such as threshold voltage, drain current, and transconductance varied by the proton irradiation. When the 5 nm-thick HfO<sub<2</sub< layer was employed for the gate insulator, the threshold voltage shift was larger than that of the 5 nm-thick Si<sub<3</sub<N<sub<4</sub< gate insulator, despite the HfO<sub<2</sub< gate insulator exhibiting better radiation resistance compared to the Si<sub<3</sub<N<sub<4</sub< gate insulator. On the other hand, the drain current and transconductance degradation were less for the 5 nm-thick HfO<sub<2</sub< gate insulator. Unlike the γ-ray irradiation, our systematic research included pulse-mode stress measurements and carrier mobility extraction and revealed that the TID and displacement damage (DD) effects were simultaneously generated by the proton irradiation in GaN-based MIS-HEMTs. The degree of the device property alteration was determined by the competition or superposition of the TID and DD effects for the threshold voltage shift and drain current and transconductance deterioration, respectively. The device property alteration was diminished due to the reduction of the linear energy transfer with increasing irradiated proton energy. We also studied the frequency performance degradation that corresponded to the irradiated proton energy in GaN-based MIS-HEMTs using an extremely thin gate insulator. GaN Si<sub<3</sub<N<sub<4</sub< HfO<sub<2</sub< gate insulator MIS-HEMT total ionizing dose effects Chemistry Dong-Seok Kim verfasserin aut Tae-Woo Kim verfasserin aut Youngho Bae verfasserin aut Hyun-Wook Jung verfasserin aut Il-Gyu Choi verfasserin aut Youn-Sub Noh verfasserin aut Sang-Heung Lee verfasserin aut Seong-Il Kim verfasserin aut Ho-Kyun Ahn verfasserin aut Dong-Min Kang verfasserin aut Jong-Won Lim verfasserin aut In Nanomaterials MDPI AG, 2012 13(2023), 5, p 898 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:13 year:2023 number:5, p 898 https://doi.org/10.3390/nano13050898 kostenfrei https://doaj.org/article/3142430887454ec1bd26ee450c90f97a kostenfrei https://www.mdpi.com/2079-4991/13/5/898 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2023 5, p 898
allfieldsGer	10.3390/nano13050898 doi (DE-627)DOAJ087984571 (DE-599)DOAJ3142430887454ec1bd26ee450c90f97a DE-627 ger DE-627 rakwb eng QD1-999 Sung-Jae Chang verfasserin aut Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Recently, we reported that device performance degradation mechanisms, which are generated by the γ-ray irradiation in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs), use extremely thin gate insulators. When the γ-ray was radiated, the total ionizing dose (TID) effects were generated and the device performance deteriorated. In this work, we investigated the device property alteration and its mechanisms, which were caused by the proton irradiation in GaN-based MIS-HEMTs for the 5 nm-thick Si<sub<3</sub<N<sub<4</sub< and HfO<sub<2</sub< gate insulator. The device property, such as threshold voltage, drain current, and transconductance varied by the proton irradiation. When the 5 nm-thick HfO<sub<2</sub< layer was employed for the gate insulator, the threshold voltage shift was larger than that of the 5 nm-thick Si<sub<3</sub<N<sub<4</sub< gate insulator, despite the HfO<sub<2</sub< gate insulator exhibiting better radiation resistance compared to the Si<sub<3</sub<N<sub<4</sub< gate insulator. On the other hand, the drain current and transconductance degradation were less for the 5 nm-thick HfO<sub<2</sub< gate insulator. Unlike the γ-ray irradiation, our systematic research included pulse-mode stress measurements and carrier mobility extraction and revealed that the TID and displacement damage (DD) effects were simultaneously generated by the proton irradiation in GaN-based MIS-HEMTs. The degree of the device property alteration was determined by the competition or superposition of the TID and DD effects for the threshold voltage shift and drain current and transconductance deterioration, respectively. The device property alteration was diminished due to the reduction of the linear energy transfer with increasing irradiated proton energy. We also studied the frequency performance degradation that corresponded to the irradiated proton energy in GaN-based MIS-HEMTs using an extremely thin gate insulator. GaN Si<sub<3</sub<N<sub<4</sub< HfO<sub<2</sub< gate insulator MIS-HEMT total ionizing dose effects Chemistry Dong-Seok Kim verfasserin aut Tae-Woo Kim verfasserin aut Youngho Bae verfasserin aut Hyun-Wook Jung verfasserin aut Il-Gyu Choi verfasserin aut Youn-Sub Noh verfasserin aut Sang-Heung Lee verfasserin aut Seong-Il Kim verfasserin aut Ho-Kyun Ahn verfasserin aut Dong-Min Kang verfasserin aut Jong-Won Lim verfasserin aut In Nanomaterials MDPI AG, 2012 13(2023), 5, p 898 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:13 year:2023 number:5, p 898 https://doi.org/10.3390/nano13050898 kostenfrei https://doaj.org/article/3142430887454ec1bd26ee450c90f97a kostenfrei https://www.mdpi.com/2079-4991/13/5/898 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2023 5, p 898
allfieldsSound	10.3390/nano13050898 doi (DE-627)DOAJ087984571 (DE-599)DOAJ3142430887454ec1bd26ee450c90f97a DE-627 ger DE-627 rakwb eng QD1-999 Sung-Jae Chang verfasserin aut Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Recently, we reported that device performance degradation mechanisms, which are generated by the γ-ray irradiation in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs), use extremely thin gate insulators. When the γ-ray was radiated, the total ionizing dose (TID) effects were generated and the device performance deteriorated. In this work, we investigated the device property alteration and its mechanisms, which were caused by the proton irradiation in GaN-based MIS-HEMTs for the 5 nm-thick Si<sub<3</sub<N<sub<4</sub< and HfO<sub<2</sub< gate insulator. The device property, such as threshold voltage, drain current, and transconductance varied by the proton irradiation. When the 5 nm-thick HfO<sub<2</sub< layer was employed for the gate insulator, the threshold voltage shift was larger than that of the 5 nm-thick Si<sub<3</sub<N<sub<4</sub< gate insulator, despite the HfO<sub<2</sub< gate insulator exhibiting better radiation resistance compared to the Si<sub<3</sub<N<sub<4</sub< gate insulator. On the other hand, the drain current and transconductance degradation were less for the 5 nm-thick HfO<sub<2</sub< gate insulator. Unlike the γ-ray irradiation, our systematic research included pulse-mode stress measurements and carrier mobility extraction and revealed that the TID and displacement damage (DD) effects were simultaneously generated by the proton irradiation in GaN-based MIS-HEMTs. The degree of the device property alteration was determined by the competition or superposition of the TID and DD effects for the threshold voltage shift and drain current and transconductance deterioration, respectively. The device property alteration was diminished due to the reduction of the linear energy transfer with increasing irradiated proton energy. We also studied the frequency performance degradation that corresponded to the irradiated proton energy in GaN-based MIS-HEMTs using an extremely thin gate insulator. GaN Si<sub<3</sub<N<sub<4</sub< HfO<sub<2</sub< gate insulator MIS-HEMT total ionizing dose effects Chemistry Dong-Seok Kim verfasserin aut Tae-Woo Kim verfasserin aut Youngho Bae verfasserin aut Hyun-Wook Jung verfasserin aut Il-Gyu Choi verfasserin aut Youn-Sub Noh verfasserin aut Sang-Heung Lee verfasserin aut Seong-Il Kim verfasserin aut Ho-Kyun Ahn verfasserin aut Dong-Min Kang verfasserin aut Jong-Won Lim verfasserin aut In Nanomaterials MDPI AG, 2012 13(2023), 5, p 898 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:13 year:2023 number:5, p 898 https://doi.org/10.3390/nano13050898 kostenfrei https://doaj.org/article/3142430887454ec1bd26ee450c90f97a kostenfrei https://www.mdpi.com/2079-4991/13/5/898 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2023 5, p 898
language	English
source	In Nanomaterials 13(2023), 5, p 898 volume:13 year:2023 number:5, p 898
sourceStr	In Nanomaterials 13(2023), 5, p 898 volume:13 year:2023 number:5, p 898
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	GaN Si<sub<3</sub<N<sub<4</sub< HfO<sub<2</sub< gate insulator MIS-HEMT total ionizing dose effects Chemistry
isfreeaccess_bool	true
container_title	Nanomaterials
authorswithroles_txt_mv	Sung-Jae Chang @@aut@@ Dong-Seok Kim @@aut@@ Tae-Woo Kim @@aut@@ Youngho Bae @@aut@@ Hyun-Wook Jung @@aut@@ Il-Gyu Choi @@aut@@ Youn-Sub Noh @@aut@@ Sang-Heung Lee @@aut@@ Seong-Il Kim @@aut@@ Ho-Kyun Ahn @@aut@@ Dong-Min Kang @@aut@@ Jong-Won Lim @@aut@@
publishDateDaySort_date	2023-01-01T00:00:00Z
hierarchy_top_id	718627199
id	DOAJ087984571
language_de	englisch
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callnumber-first	Q - Science
author	Sung-Jae Chang
spellingShingle	Sung-Jae Chang misc QD1-999 misc GaN misc Si<sub<3</sub<N<sub<4</sub< misc HfO<sub<2</sub< misc gate insulator misc MIS-HEMT misc total ionizing dose effects misc Chemistry Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator
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topic_title	QD1-999 Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator GaN Si<sub<3</sub<N<sub<4</sub< HfO<sub<2</sub< gate insulator MIS-HEMT total ionizing dose effects
topic	misc QD1-999 misc GaN misc Si<sub<3</sub<N<sub<4</sub< misc HfO<sub<2</sub< misc gate insulator misc MIS-HEMT misc total ionizing dose effects misc Chemistry
topic_unstemmed	misc QD1-999 misc GaN misc Si<sub<3</sub<N<sub<4</sub< misc HfO<sub<2</sub< misc gate insulator misc MIS-HEMT misc total ionizing dose effects misc Chemistry
topic_browse	misc QD1-999 misc GaN misc Si<sub<3</sub<N<sub<4</sub< misc HfO<sub<2</sub< misc gate insulator misc MIS-HEMT misc total ionizing dose effects misc Chemistry
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title	Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator
ctrlnum	(DE-627)DOAJ087984571 (DE-599)DOAJ3142430887454ec1bd26ee450c90f97a
title_full	Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator
author_sort	Sung-Jae Chang
journal	Nanomaterials
journalStr	Nanomaterials
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author_browse	Sung-Jae Chang Dong-Seok Kim Tae-Woo Kim Youngho Bae Hyun-Wook Jung Il-Gyu Choi Youn-Sub Noh Sang-Heung Lee Seong-Il Kim Ho-Kyun Ahn Dong-Min Kang Jong-Won Lim
container_volume	13
class	QD1-999
format_se	Elektronische Aufsätze
author-letter	Sung-Jae Chang
doi_str_mv	10.3390/nano13050898
author2-role	verfasserin
title_sort	mechanisms of the device property alteration generated by the proton irradiation in gan-based mis-hemts using extremely thin gate insulator
callnumber	QD1-999
title_auth	Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator
abstract	Recently, we reported that device performance degradation mechanisms, which are generated by the γ-ray irradiation in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs), use extremely thin gate insulators. When the γ-ray was radiated, the total ionizing dose (TID) effects were generated and the device performance deteriorated. In this work, we investigated the device property alteration and its mechanisms, which were caused by the proton irradiation in GaN-based MIS-HEMTs for the 5 nm-thick Si<sub<3</sub<N<sub<4</sub< and HfO<sub<2</sub< gate insulator. The device property, such as threshold voltage, drain current, and transconductance varied by the proton irradiation. When the 5 nm-thick HfO<sub<2</sub< layer was employed for the gate insulator, the threshold voltage shift was larger than that of the 5 nm-thick Si<sub<3</sub<N<sub<4</sub< gate insulator, despite the HfO<sub<2</sub< gate insulator exhibiting better radiation resistance compared to the Si<sub<3</sub<N<sub<4</sub< gate insulator. On the other hand, the drain current and transconductance degradation were less for the 5 nm-thick HfO<sub<2</sub< gate insulator. Unlike the γ-ray irradiation, our systematic research included pulse-mode stress measurements and carrier mobility extraction and revealed that the TID and displacement damage (DD) effects were simultaneously generated by the proton irradiation in GaN-based MIS-HEMTs. The degree of the device property alteration was determined by the competition or superposition of the TID and DD effects for the threshold voltage shift and drain current and transconductance deterioration, respectively. The device property alteration was diminished due to the reduction of the linear energy transfer with increasing irradiated proton energy. We also studied the frequency performance degradation that corresponded to the irradiated proton energy in GaN-based MIS-HEMTs using an extremely thin gate insulator.
abstractGer	Recently, we reported that device performance degradation mechanisms, which are generated by the γ-ray irradiation in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs), use extremely thin gate insulators. When the γ-ray was radiated, the total ionizing dose (TID) effects were generated and the device performance deteriorated. In this work, we investigated the device property alteration and its mechanisms, which were caused by the proton irradiation in GaN-based MIS-HEMTs for the 5 nm-thick Si<sub<3</sub<N<sub<4</sub< and HfO<sub<2</sub< gate insulator. The device property, such as threshold voltage, drain current, and transconductance varied by the proton irradiation. When the 5 nm-thick HfO<sub<2</sub< layer was employed for the gate insulator, the threshold voltage shift was larger than that of the 5 nm-thick Si<sub<3</sub<N<sub<4</sub< gate insulator, despite the HfO<sub<2</sub< gate insulator exhibiting better radiation resistance compared to the Si<sub<3</sub<N<sub<4</sub< gate insulator. On the other hand, the drain current and transconductance degradation were less for the 5 nm-thick HfO<sub<2</sub< gate insulator. Unlike the γ-ray irradiation, our systematic research included pulse-mode stress measurements and carrier mobility extraction and revealed that the TID and displacement damage (DD) effects were simultaneously generated by the proton irradiation in GaN-based MIS-HEMTs. The degree of the device property alteration was determined by the competition or superposition of the TID and DD effects for the threshold voltage shift and drain current and transconductance deterioration, respectively. The device property alteration was diminished due to the reduction of the linear energy transfer with increasing irradiated proton energy. We also studied the frequency performance degradation that corresponded to the irradiated proton energy in GaN-based MIS-HEMTs using an extremely thin gate insulator.
abstract_unstemmed	Recently, we reported that device performance degradation mechanisms, which are generated by the γ-ray irradiation in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs), use extremely thin gate insulators. When the γ-ray was radiated, the total ionizing dose (TID) effects were generated and the device performance deteriorated. In this work, we investigated the device property alteration and its mechanisms, which were caused by the proton irradiation in GaN-based MIS-HEMTs for the 5 nm-thick Si<sub<3</sub<N<sub<4</sub< and HfO<sub<2</sub< gate insulator. The device property, such as threshold voltage, drain current, and transconductance varied by the proton irradiation. When the 5 nm-thick HfO<sub<2</sub< layer was employed for the gate insulator, the threshold voltage shift was larger than that of the 5 nm-thick Si<sub<3</sub<N<sub<4</sub< gate insulator, despite the HfO<sub<2</sub< gate insulator exhibiting better radiation resistance compared to the Si<sub<3</sub<N<sub<4</sub< gate insulator. On the other hand, the drain current and transconductance degradation were less for the 5 nm-thick HfO<sub<2</sub< gate insulator. Unlike the γ-ray irradiation, our systematic research included pulse-mode stress measurements and carrier mobility extraction and revealed that the TID and displacement damage (DD) effects were simultaneously generated by the proton irradiation in GaN-based MIS-HEMTs. The degree of the device property alteration was determined by the competition or superposition of the TID and DD effects for the threshold voltage shift and drain current and transconductance deterioration, respectively. The device property alteration was diminished due to the reduction of the linear energy transfer with increasing irradiated proton energy. We also studied the frequency performance degradation that corresponded to the irradiated proton energy in GaN-based MIS-HEMTs using an extremely thin gate insulator.
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container_issue	5, p 898
title_short	Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator
url	https://doi.org/10.3390/nano13050898 https://doaj.org/article/3142430887454ec1bd26ee450c90f97a https://www.mdpi.com/2079-4991/13/5/898 https://doaj.org/toc/2079-4991
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Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator

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