Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe<sub<2</sub< Nanofilms

In this paper, we propose an optically controlling broadband terahertz modulator of a layer-dependent PtSe<sub<2</sub< nanofilm based on a high-resistance silicon substrate. Through optical pump and terahertz probe system, the results show that compared with 6-, 10-, and 20-layer films,...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Hong Su [verfasserIn] Zesong Zheng [verfasserIn] Zhisheng Yu [verfasserIn] Shiping Feng [verfasserIn] Huiting Lan [verfasserIn] Shixing Wang [verfasserIn] Min Zhang [verfasserIn] Ling Li [verfasserIn] Huawei Liang [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	terahertz modulator photoconductivity PtSe

Übergeordnetes Werk:	In: Nanomaterials - MDPI AG, 2012, 13(2023), 5, p 795
Übergeordnetes Werk:	volume:13 ; year:2023 ; number:5, p 795

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/nano13050795

Katalog-ID:	DOAJ087985624

Internformat


LEADER	01000caa a22002652 4500
001	DOAJ087985624
003	DE-627
005	20240413054055.0
007	cr uuu---uuuuu
008	230410s2023 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.3390/nano13050795 \|2 doi
035			\|a (DE-627)DOAJ087985624
035			\|a (DE-599)DOAJbc64a600439f4bea96ccb9d9d9824b64
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
050		0	\|a QD1-999
100	0		\|a Hong Su \|e verfasserin \|4 aut
245	1	0	\|a Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe<sub<2</sub< Nanofilms
264		1	\|c 2023
336			\|a Text \|b txt \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a In this paper, we propose an optically controlling broadband terahertz modulator of a layer-dependent PtSe<sub<2</sub< nanofilm based on a high-resistance silicon substrate. Through optical pump and terahertz probe system, the results show that compared with 6-, 10-, and 20-layer films, a 3-layer PtSe<sub<2</sub< nanofilm has better surface photoconductivity in the terahertz band and has a higher plasma frequency <i<ω<sub<p</sub<</i< of 0.23 THz and a lower scattering time <i<τ<sub<s</sub<</i< of 70 fs by Drude–Smith fitting. By the terahertz time-domain spectroscopy system, the broadband amplitude modulation of a 3-layer PtSe<sub<2</sub< film in the range of 0.1–1.6 THz was obtained, and the modulation depth reached 50.9% at a pump density of 2.5 W/cm<sup<2</sup<. This work proves that PtSe<sub<2</sub< nanofilm devices are suitable for terahertz modulators.
650		4	\|a terahertz
650		4	\|a modulator
650		4	\|a photoconductivity
650		4	\|a PtSe<sub<2</sub<
653		0	\|a Chemistry
700	0		\|a Zesong Zheng \|e verfasserin \|4 aut
700	0		\|a Zhisheng Yu \|e verfasserin \|4 aut
700	0		\|a Shiping Feng \|e verfasserin \|4 aut
700	0		\|a Huiting Lan \|e verfasserin \|4 aut
700	0		\|a Shixing Wang \|e verfasserin \|4 aut
700	0		\|a Min Zhang \|e verfasserin \|4 aut
700	0		\|a Ling Li \|e verfasserin \|4 aut
700	0		\|a Huawei Liang \|e verfasserin \|4 aut
773	0	8	\|i In \|t Nanomaterials \|d MDPI AG, 2012 \|g 13(2023), 5, p 795 \|w (DE-627)718627199 \|w (DE-600)2662255-5 \|x 20794991 \|7 nnns
773	1	8	\|g volume:13 \|g year:2023 \|g number:5, p 795
856	4	0	\|u https://doi.org/10.3390/nano13050795 \|z kostenfrei
856	4	0	\|u https://doaj.org/article/bc64a600439f4bea96ccb9d9d9824b64 \|z kostenfrei
856	4	0	\|u https://www.mdpi.com/2079-4991/13/5/795 \|z kostenfrei
856	4	2	\|u https://doaj.org/toc/2079-4991 \|y Journal toc \|z kostenfrei
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_DOAJ
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_95
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_151
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_213
912			\|a GBV_ILN_230
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_602
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2119
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4367
912			\|a GBV_ILN_4700
951			\|a AR
952			\|d 13 \|j 2023 \|e 5, p 795

Indexfelder

author_variant	h s hs z z zz z y zy s f sf h l hl s w sw m z mz l l ll h l hl
matchkey_str	article:20794991:2023----::pialcnrligrabntrhrzouaobsdnaedpne
hierarchy_sort_str	2023
callnumber-subject-code	QD
publishDate	2023
allfields	10.3390/nano13050795 doi (DE-627)DOAJ087985624 (DE-599)DOAJbc64a600439f4bea96ccb9d9d9824b64 DE-627 ger DE-627 rakwb eng QD1-999 Hong Su verfasserin aut Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe<sub<2</sub< Nanofilms 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, we propose an optically controlling broadband terahertz modulator of a layer-dependent PtSe<sub<2</sub< nanofilm based on a high-resistance silicon substrate. Through optical pump and terahertz probe system, the results show that compared with 6-, 10-, and 20-layer films, a 3-layer PtSe<sub<2</sub< nanofilm has better surface photoconductivity in the terahertz band and has a higher plasma frequency <i<ω<sub<p</sub<</i< of 0.23 THz and a lower scattering time <i<τ<sub<s</sub<</i< of 70 fs by Drude–Smith fitting. By the terahertz time-domain spectroscopy system, the broadband amplitude modulation of a 3-layer PtSe<sub<2</sub< film in the range of 0.1–1.6 THz was obtained, and the modulation depth reached 50.9% at a pump density of 2.5 W/cm<sup<2</sup<. This work proves that PtSe<sub<2</sub< nanofilm devices are suitable for terahertz modulators. terahertz modulator photoconductivity PtSe<sub<2</sub< Chemistry Zesong Zheng verfasserin aut Zhisheng Yu verfasserin aut Shiping Feng verfasserin aut Huiting Lan verfasserin aut Shixing Wang verfasserin aut Min Zhang verfasserin aut Ling Li verfasserin aut Huawei Liang verfasserin aut In Nanomaterials MDPI AG, 2012 13(2023), 5, p 795 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:13 year:2023 number:5, p 795 https://doi.org/10.3390/nano13050795 kostenfrei https://doaj.org/article/bc64a600439f4bea96ccb9d9d9824b64 kostenfrei https://www.mdpi.com/2079-4991/13/5/795 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2023 5, p 795
spelling	10.3390/nano13050795 doi (DE-627)DOAJ087985624 (DE-599)DOAJbc64a600439f4bea96ccb9d9d9824b64 DE-627 ger DE-627 rakwb eng QD1-999 Hong Su verfasserin aut Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe<sub<2</sub< Nanofilms 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, we propose an optically controlling broadband terahertz modulator of a layer-dependent PtSe<sub<2</sub< nanofilm based on a high-resistance silicon substrate. Through optical pump and terahertz probe system, the results show that compared with 6-, 10-, and 20-layer films, a 3-layer PtSe<sub<2</sub< nanofilm has better surface photoconductivity in the terahertz band and has a higher plasma frequency <i<ω<sub<p</sub<</i< of 0.23 THz and a lower scattering time <i<τ<sub<s</sub<</i< of 70 fs by Drude–Smith fitting. By the terahertz time-domain spectroscopy system, the broadband amplitude modulation of a 3-layer PtSe<sub<2</sub< film in the range of 0.1–1.6 THz was obtained, and the modulation depth reached 50.9% at a pump density of 2.5 W/cm<sup<2</sup<. This work proves that PtSe<sub<2</sub< nanofilm devices are suitable for terahertz modulators. terahertz modulator photoconductivity PtSe<sub<2</sub< Chemistry Zesong Zheng verfasserin aut Zhisheng Yu verfasserin aut Shiping Feng verfasserin aut Huiting Lan verfasserin aut Shixing Wang verfasserin aut Min Zhang verfasserin aut Ling Li verfasserin aut Huawei Liang verfasserin aut In Nanomaterials MDPI AG, 2012 13(2023), 5, p 795 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:13 year:2023 number:5, p 795 https://doi.org/10.3390/nano13050795 kostenfrei https://doaj.org/article/bc64a600439f4bea96ccb9d9d9824b64 kostenfrei https://www.mdpi.com/2079-4991/13/5/795 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2023 5, p 795
allfields_unstemmed	10.3390/nano13050795 doi (DE-627)DOAJ087985624 (DE-599)DOAJbc64a600439f4bea96ccb9d9d9824b64 DE-627 ger DE-627 rakwb eng QD1-999 Hong Su verfasserin aut Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe<sub<2</sub< Nanofilms 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, we propose an optically controlling broadband terahertz modulator of a layer-dependent PtSe<sub<2</sub< nanofilm based on a high-resistance silicon substrate. Through optical pump and terahertz probe system, the results show that compared with 6-, 10-, and 20-layer films, a 3-layer PtSe<sub<2</sub< nanofilm has better surface photoconductivity in the terahertz band and has a higher plasma frequency <i<ω<sub<p</sub<</i< of 0.23 THz and a lower scattering time <i<τ<sub<s</sub<</i< of 70 fs by Drude–Smith fitting. By the terahertz time-domain spectroscopy system, the broadband amplitude modulation of a 3-layer PtSe<sub<2</sub< film in the range of 0.1–1.6 THz was obtained, and the modulation depth reached 50.9% at a pump density of 2.5 W/cm<sup<2</sup<. This work proves that PtSe<sub<2</sub< nanofilm devices are suitable for terahertz modulators. terahertz modulator photoconductivity PtSe<sub<2</sub< Chemistry Zesong Zheng verfasserin aut Zhisheng Yu verfasserin aut Shiping Feng verfasserin aut Huiting Lan verfasserin aut Shixing Wang verfasserin aut Min Zhang verfasserin aut Ling Li verfasserin aut Huawei Liang verfasserin aut In Nanomaterials MDPI AG, 2012 13(2023), 5, p 795 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:13 year:2023 number:5, p 795 https://doi.org/10.3390/nano13050795 kostenfrei https://doaj.org/article/bc64a600439f4bea96ccb9d9d9824b64 kostenfrei https://www.mdpi.com/2079-4991/13/5/795 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2023 5, p 795
allfieldsGer	10.3390/nano13050795 doi (DE-627)DOAJ087985624 (DE-599)DOAJbc64a600439f4bea96ccb9d9d9824b64 DE-627 ger DE-627 rakwb eng QD1-999 Hong Su verfasserin aut Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe<sub<2</sub< Nanofilms 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, we propose an optically controlling broadband terahertz modulator of a layer-dependent PtSe<sub<2</sub< nanofilm based on a high-resistance silicon substrate. Through optical pump and terahertz probe system, the results show that compared with 6-, 10-, and 20-layer films, a 3-layer PtSe<sub<2</sub< nanofilm has better surface photoconductivity in the terahertz band and has a higher plasma frequency <i<ω<sub<p</sub<</i< of 0.23 THz and a lower scattering time <i<τ<sub<s</sub<</i< of 70 fs by Drude–Smith fitting. By the terahertz time-domain spectroscopy system, the broadband amplitude modulation of a 3-layer PtSe<sub<2</sub< film in the range of 0.1–1.6 THz was obtained, and the modulation depth reached 50.9% at a pump density of 2.5 W/cm<sup<2</sup<. This work proves that PtSe<sub<2</sub< nanofilm devices are suitable for terahertz modulators. terahertz modulator photoconductivity PtSe<sub<2</sub< Chemistry Zesong Zheng verfasserin aut Zhisheng Yu verfasserin aut Shiping Feng verfasserin aut Huiting Lan verfasserin aut Shixing Wang verfasserin aut Min Zhang verfasserin aut Ling Li verfasserin aut Huawei Liang verfasserin aut In Nanomaterials MDPI AG, 2012 13(2023), 5, p 795 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:13 year:2023 number:5, p 795 https://doi.org/10.3390/nano13050795 kostenfrei https://doaj.org/article/bc64a600439f4bea96ccb9d9d9824b64 kostenfrei https://www.mdpi.com/2079-4991/13/5/795 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2023 5, p 795
allfieldsSound	10.3390/nano13050795 doi (DE-627)DOAJ087985624 (DE-599)DOAJbc64a600439f4bea96ccb9d9d9824b64 DE-627 ger DE-627 rakwb eng QD1-999 Hong Su verfasserin aut Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe<sub<2</sub< Nanofilms 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, we propose an optically controlling broadband terahertz modulator of a layer-dependent PtSe<sub<2</sub< nanofilm based on a high-resistance silicon substrate. Through optical pump and terahertz probe system, the results show that compared with 6-, 10-, and 20-layer films, a 3-layer PtSe<sub<2</sub< nanofilm has better surface photoconductivity in the terahertz band and has a higher plasma frequency <i<ω<sub<p</sub<</i< of 0.23 THz and a lower scattering time <i<τ<sub<s</sub<</i< of 70 fs by Drude–Smith fitting. By the terahertz time-domain spectroscopy system, the broadband amplitude modulation of a 3-layer PtSe<sub<2</sub< film in the range of 0.1–1.6 THz was obtained, and the modulation depth reached 50.9% at a pump density of 2.5 W/cm<sup<2</sup<. This work proves that PtSe<sub<2</sub< nanofilm devices are suitable for terahertz modulators. terahertz modulator photoconductivity PtSe<sub<2</sub< Chemistry Zesong Zheng verfasserin aut Zhisheng Yu verfasserin aut Shiping Feng verfasserin aut Huiting Lan verfasserin aut Shixing Wang verfasserin aut Min Zhang verfasserin aut Ling Li verfasserin aut Huawei Liang verfasserin aut In Nanomaterials MDPI AG, 2012 13(2023), 5, p 795 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:13 year:2023 number:5, p 795 https://doi.org/10.3390/nano13050795 kostenfrei https://doaj.org/article/bc64a600439f4bea96ccb9d9d9824b64 kostenfrei https://www.mdpi.com/2079-4991/13/5/795 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2023 5, p 795
language	English
source	In Nanomaterials 13(2023), 5, p 795 volume:13 year:2023 number:5, p 795
sourceStr	In Nanomaterials 13(2023), 5, p 795 volume:13 year:2023 number:5, p 795
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	terahertz modulator photoconductivity PtSe<sub<2</sub< Chemistry
isfreeaccess_bool	true
container_title	Nanomaterials
authorswithroles_txt_mv	Hong Su @@aut@@ Zesong Zheng @@aut@@ Zhisheng Yu @@aut@@ Shiping Feng @@aut@@ Huiting Lan @@aut@@ Shixing Wang @@aut@@ Min Zhang @@aut@@ Ling Li @@aut@@ Huawei Liang @@aut@@
publishDateDaySort_date	2023-01-01T00:00:00Z
hierarchy_top_id	718627199
id	DOAJ087985624
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ087985624</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20240413054055.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230410s2023 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.3390/nano13050795</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ087985624</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJbc64a600439f4bea96ccb9d9d9824b64</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QD1-999</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Hong Su</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe<sub<2</sub< Nanofilms</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2023</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">In this paper, we propose an optically controlling broadband terahertz modulator of a layer-dependent PtSe<sub<2</sub< nanofilm based on a high-resistance silicon substrate. Through optical pump and terahertz probe system, the results show that compared with 6-, 10-, and 20-layer films, a 3-layer PtSe<sub<2</sub< nanofilm has better surface photoconductivity in the terahertz band and has a higher plasma frequency <i<ω<sub<p</sub<</i< of 0.23 THz and a lower scattering time <i<τ<sub<s</sub<</i< of 70 fs by Drude–Smith fitting. By the terahertz time-domain spectroscopy system, the broadband amplitude modulation of a 3-layer PtSe<sub<2</sub< film in the range of 0.1–1.6 THz was obtained, and the modulation depth reached 50.9% at a pump density of 2.5 W/cm<sup<2</sup<. This work proves that PtSe<sub<2</sub< nanofilm devices are suitable for terahertz modulators.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">terahertz</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">modulator</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">photoconductivity</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">PtSe<sub<2</sub<</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Chemistry</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Zesong Zheng</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Zhisheng Yu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Shiping Feng</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Huiting Lan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Shixing Wang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Min Zhang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Ling Li</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Huawei Liang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Nanomaterials</subfield><subfield code="d">MDPI AG, 2012</subfield><subfield code="g">13(2023), 5, p 795</subfield><subfield code="w">(DE-627)718627199</subfield><subfield code="w">(DE-600)2662255-5</subfield><subfield code="x">20794991</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:13</subfield><subfield code="g">year:2023</subfield><subfield code="g">number:5, p 795</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.3390/nano13050795</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/bc64a600439f4bea96ccb9d9d9824b64</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.mdpi.com/2079-4991/13/5/795</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2079-4991</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2108</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2119</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">13</subfield><subfield code="j">2023</subfield><subfield code="e">5, p 795</subfield></datafield></record></collection>
callnumber-first	Q - Science
author	Hong Su
spellingShingle	Hong Su misc QD1-999 misc terahertz misc modulator misc photoconductivity misc PtSe<sub<2</sub< misc Chemistry Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe<sub<2</sub< Nanofilms
authorStr	Hong Su
ppnlink_with_tag_str_mv	@@773@@(DE-627)718627199
format	electronic Article
delete_txt_mv	keep
author_role	aut aut aut aut aut aut aut aut aut
collection	DOAJ
remote_str	true
callnumber-label	QD1-999
illustrated	Not Illustrated
issn	20794991
topic_title	QD1-999 Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe<sub<2</sub< Nanofilms terahertz modulator photoconductivity PtSe<sub<2</sub<
topic	misc QD1-999 misc terahertz misc modulator misc photoconductivity misc PtSe<sub<2</sub< misc Chemistry
topic_unstemmed	misc QD1-999 misc terahertz misc modulator misc photoconductivity misc PtSe<sub<2</sub< misc Chemistry
topic_browse	misc QD1-999 misc terahertz misc modulator misc photoconductivity misc PtSe<sub<2</sub< misc Chemistry
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	Nanomaterials
hierarchy_parent_id	718627199
hierarchy_top_title	Nanomaterials
isfreeaccess_txt	true
familylinks_str_mv	(DE-627)718627199 (DE-600)2662255-5
title	Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe<sub<2</sub< Nanofilms
ctrlnum	(DE-627)DOAJ087985624 (DE-599)DOAJbc64a600439f4bea96ccb9d9d9824b64
title_full	Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe<sub<2</sub< Nanofilms
author_sort	Hong Su
journal	Nanomaterials
journalStr	Nanomaterials
callnumber-first-code	Q
lang_code	eng
isOA_bool	true
recordtype	marc
publishDateSort	2023
contenttype_str_mv	txt
author_browse	Hong Su Zesong Zheng Zhisheng Yu Shiping Feng Huiting Lan Shixing Wang Min Zhang Ling Li Huawei Liang
container_volume	13
class	QD1-999
format_se	Elektronische Aufsätze
author-letter	Hong Su
doi_str_mv	10.3390/nano13050795
author2-role	verfasserin
title_sort	optically controlling broadband terahertz modulator based on layer-dependent ptse<sub<2</sub< nanofilms
callnumber	QD1-999
title_auth	Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe<sub<2</sub< Nanofilms
abstract	In this paper, we propose an optically controlling broadband terahertz modulator of a layer-dependent PtSe<sub<2</sub< nanofilm based on a high-resistance silicon substrate. Through optical pump and terahertz probe system, the results show that compared with 6-, 10-, and 20-layer films, a 3-layer PtSe<sub<2</sub< nanofilm has better surface photoconductivity in the terahertz band and has a higher plasma frequency <i<ω<sub<p</sub<</i< of 0.23 THz and a lower scattering time <i<τ<sub<s</sub<</i< of 70 fs by Drude–Smith fitting. By the terahertz time-domain spectroscopy system, the broadband amplitude modulation of a 3-layer PtSe<sub<2</sub< film in the range of 0.1–1.6 THz was obtained, and the modulation depth reached 50.9% at a pump density of 2.5 W/cm<sup<2</sup<. This work proves that PtSe<sub<2</sub< nanofilm devices are suitable for terahertz modulators.
abstractGer	In this paper, we propose an optically controlling broadband terahertz modulator of a layer-dependent PtSe<sub<2</sub< nanofilm based on a high-resistance silicon substrate. Through optical pump and terahertz probe system, the results show that compared with 6-, 10-, and 20-layer films, a 3-layer PtSe<sub<2</sub< nanofilm has better surface photoconductivity in the terahertz band and has a higher plasma frequency <i<ω<sub<p</sub<</i< of 0.23 THz and a lower scattering time <i<τ<sub<s</sub<</i< of 70 fs by Drude–Smith fitting. By the terahertz time-domain spectroscopy system, the broadband amplitude modulation of a 3-layer PtSe<sub<2</sub< film in the range of 0.1–1.6 THz was obtained, and the modulation depth reached 50.9% at a pump density of 2.5 W/cm<sup<2</sup<. This work proves that PtSe<sub<2</sub< nanofilm devices are suitable for terahertz modulators.
abstract_unstemmed	In this paper, we propose an optically controlling broadband terahertz modulator of a layer-dependent PtSe<sub<2</sub< nanofilm based on a high-resistance silicon substrate. Through optical pump and terahertz probe system, the results show that compared with 6-, 10-, and 20-layer films, a 3-layer PtSe<sub<2</sub< nanofilm has better surface photoconductivity in the terahertz band and has a higher plasma frequency <i<ω<sub<p</sub<</i< of 0.23 THz and a lower scattering time <i<τ<sub<s</sub<</i< of 70 fs by Drude–Smith fitting. By the terahertz time-domain spectroscopy system, the broadband amplitude modulation of a 3-layer PtSe<sub<2</sub< film in the range of 0.1–1.6 THz was obtained, and the modulation depth reached 50.9% at a pump density of 2.5 W/cm<sup<2</sup<. This work proves that PtSe<sub<2</sub< nanofilm devices are suitable for terahertz modulators.
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700
container_issue	5, p 795
title_short	Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe<sub<2</sub< Nanofilms
url	https://doi.org/10.3390/nano13050795 https://doaj.org/article/bc64a600439f4bea96ccb9d9d9824b64 https://www.mdpi.com/2079-4991/13/5/795 https://doaj.org/toc/2079-4991
remote_bool	true
author2	Zesong Zheng Zhisheng Yu Shiping Feng Huiting Lan Shixing Wang Min Zhang Ling Li Huawei Liang
author2Str	Zesong Zheng Zhisheng Yu Shiping Feng Huiting Lan Shixing Wang Min Zhang Ling Li Huawei Liang
ppnlink	718627199
callnumber-subject	QD - Chemistry
mediatype_str_mv	c
isOA_txt	true
hochschulschrift_bool	false
doi_str	10.3390/nano13050795
callnumber-a	QD1-999
up_date	2024-07-03T15:07:03.540Z
_version_	1803570877344776192
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">DOAJ087985624</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20240413054055.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230410s2023 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.3390/nano13050795</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ087985624</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJbc64a600439f4bea96ccb9d9d9824b64</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QD1-999</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Hong Su</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe<sub<2</sub< Nanofilms</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2023</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">In this paper, we propose an optically controlling broadband terahertz modulator of a layer-dependent PtSe<sub<2</sub< nanofilm based on a high-resistance silicon substrate. Through optical pump and terahertz probe system, the results show that compared with 6-, 10-, and 20-layer films, a 3-layer PtSe<sub<2</sub< nanofilm has better surface photoconductivity in the terahertz band and has a higher plasma frequency <i<ω<sub<p</sub<</i< of 0.23 THz and a lower scattering time <i<τ<sub<s</sub<</i< of 70 fs by Drude–Smith fitting. By the terahertz time-domain spectroscopy system, the broadband amplitude modulation of a 3-layer PtSe<sub<2</sub< film in the range of 0.1–1.6 THz was obtained, and the modulation depth reached 50.9% at a pump density of 2.5 W/cm<sup<2</sup<. This work proves that PtSe<sub<2</sub< nanofilm devices are suitable for terahertz modulators.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">terahertz</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">modulator</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">photoconductivity</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">PtSe<sub<2</sub<</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Chemistry</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Zesong Zheng</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Zhisheng Yu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Shiping Feng</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Huiting Lan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Shixing Wang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Min Zhang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Ling Li</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Huawei Liang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Nanomaterials</subfield><subfield code="d">MDPI AG, 2012</subfield><subfield code="g">13(2023), 5, p 795</subfield><subfield code="w">(DE-627)718627199</subfield><subfield code="w">(DE-600)2662255-5</subfield><subfield code="x">20794991</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:13</subfield><subfield code="g">year:2023</subfield><subfield code="g">number:5, p 795</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.3390/nano13050795</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/bc64a600439f4bea96ccb9d9d9824b64</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.mdpi.com/2079-4991/13/5/795</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/2079-4991</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2108</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2119</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">13</subfield><subfield code="j">2023</subfield><subfield code="e">5, p 795</subfield></datafield></record></collection>
score	7.3977413

Nicht das Richtige dabei?

Schreiben Sie uns!

Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe<sub<2</sub< Nanofilms

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?