Research on a Method to Improve the Temperature Performance of an All-Silicon Accelerometer

This paper presents a novel method for the performance of an all-silicon accelerometer by adjusting the ratio of the Si-SiO<sub<2</sub< bonding area, and the Au-Si bonding area in the anchor zone, with the aim of eliminating stress in the anchor region. The study includes the development...
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Autor*in:	Guowen Liu [verfasserIn] Yu Liu [verfasserIn] Xiao Ma [verfasserIn] Xuefeng Wang [verfasserIn] Xudong Zheng [verfasserIn] Zhonghe Jin [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	MEMS accelerometer response signal anchor zone stress cancellation

Übergeordnetes Werk:	In: Micromachines - MDPI AG, 2010, 14(2023), 4, p 869
Übergeordnetes Werk:	volume:14 ; year:2023 ; number:4, p 869

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/mi14040869

Katalog-ID:	DOAJ089808061

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allfields	10.3390/mi14040869 doi (DE-627)DOAJ089808061 (DE-599)DOAJ3723260905334108906bd4fede7eecc6 DE-627 ger DE-627 rakwb eng TJ1-1570 Guowen Liu verfasserin aut Research on a Method to Improve the Temperature Performance of an All-Silicon Accelerometer 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper presents a novel method for the performance of an all-silicon accelerometer by adjusting the ratio of the Si-SiO<sub<2</sub< bonding area, and the Au-Si bonding area in the anchor zone, with the aim of eliminating stress in the anchor region. The study includes the development of an accelerometer model and simulation analysis which demonstrates the stress maps of the accelerometer under different anchor–area ratios, which have a strong impact on the performance of the accelerometer. In practical applications, the deformation of the comb structure fixed by the anchor zone is influenced by the stress in the anchor region, causing a distorted nonlinear response signal. The simulation results demonstrate that when the area ratio of the Si-SiO<sub<2</sub< anchor zone to the Au-Si anchor zone decreases to 0.5, the stress in the anchor zone decreases significantly. Experimental results reveal that the full-temperature stability of zero-bias is optimized from 133 μg to 46 μg when the anchor–zone ratio of the accelerometer decreases from 0.8 to 0.5. At the same time, the full-temperature stability of the scale factor is optimized from 87 ppm to 32 ppm. Furthermore, zero-bias full-temperature stability and scale factor full-temperature stability are improved by 34.6% and 36.8%, respectively. MEMS accelerometer response signal anchor zone stress cancellation Mechanical engineering and machinery Yu Liu verfasserin aut Xiao Ma verfasserin aut Xuefeng Wang verfasserin aut Xudong Zheng verfasserin aut Zhonghe Jin verfasserin aut In Micromachines MDPI AG, 2010 14(2023), 4, p 869 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:14 year:2023 number:4, p 869 https://doi.org/10.3390/mi14040869 kostenfrei https://doaj.org/article/3723260905334108906bd4fede7eecc6 kostenfrei https://www.mdpi.com/2072-666X/14/4/869 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 14 2023 4, p 869
spelling	10.3390/mi14040869 doi (DE-627)DOAJ089808061 (DE-599)DOAJ3723260905334108906bd4fede7eecc6 DE-627 ger DE-627 rakwb eng TJ1-1570 Guowen Liu verfasserin aut Research on a Method to Improve the Temperature Performance of an All-Silicon Accelerometer 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper presents a novel method for the performance of an all-silicon accelerometer by adjusting the ratio of the Si-SiO<sub<2</sub< bonding area, and the Au-Si bonding area in the anchor zone, with the aim of eliminating stress in the anchor region. The study includes the development of an accelerometer model and simulation analysis which demonstrates the stress maps of the accelerometer under different anchor–area ratios, which have a strong impact on the performance of the accelerometer. In practical applications, the deformation of the comb structure fixed by the anchor zone is influenced by the stress in the anchor region, causing a distorted nonlinear response signal. The simulation results demonstrate that when the area ratio of the Si-SiO<sub<2</sub< anchor zone to the Au-Si anchor zone decreases to 0.5, the stress in the anchor zone decreases significantly. Experimental results reveal that the full-temperature stability of zero-bias is optimized from 133 μg to 46 μg when the anchor–zone ratio of the accelerometer decreases from 0.8 to 0.5. At the same time, the full-temperature stability of the scale factor is optimized from 87 ppm to 32 ppm. Furthermore, zero-bias full-temperature stability and scale factor full-temperature stability are improved by 34.6% and 36.8%, respectively. MEMS accelerometer response signal anchor zone stress cancellation Mechanical engineering and machinery Yu Liu verfasserin aut Xiao Ma verfasserin aut Xuefeng Wang verfasserin aut Xudong Zheng verfasserin aut Zhonghe Jin verfasserin aut In Micromachines MDPI AG, 2010 14(2023), 4, p 869 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:14 year:2023 number:4, p 869 https://doi.org/10.3390/mi14040869 kostenfrei https://doaj.org/article/3723260905334108906bd4fede7eecc6 kostenfrei https://www.mdpi.com/2072-666X/14/4/869 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 14 2023 4, p 869
allfields_unstemmed	10.3390/mi14040869 doi (DE-627)DOAJ089808061 (DE-599)DOAJ3723260905334108906bd4fede7eecc6 DE-627 ger DE-627 rakwb eng TJ1-1570 Guowen Liu verfasserin aut Research on a Method to Improve the Temperature Performance of an All-Silicon Accelerometer 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper presents a novel method for the performance of an all-silicon accelerometer by adjusting the ratio of the Si-SiO<sub<2</sub< bonding area, and the Au-Si bonding area in the anchor zone, with the aim of eliminating stress in the anchor region. The study includes the development of an accelerometer model and simulation analysis which demonstrates the stress maps of the accelerometer under different anchor–area ratios, which have a strong impact on the performance of the accelerometer. In practical applications, the deformation of the comb structure fixed by the anchor zone is influenced by the stress in the anchor region, causing a distorted nonlinear response signal. The simulation results demonstrate that when the area ratio of the Si-SiO<sub<2</sub< anchor zone to the Au-Si anchor zone decreases to 0.5, the stress in the anchor zone decreases significantly. Experimental results reveal that the full-temperature stability of zero-bias is optimized from 133 μg to 46 μg when the anchor–zone ratio of the accelerometer decreases from 0.8 to 0.5. At the same time, the full-temperature stability of the scale factor is optimized from 87 ppm to 32 ppm. Furthermore, zero-bias full-temperature stability and scale factor full-temperature stability are improved by 34.6% and 36.8%, respectively. MEMS accelerometer response signal anchor zone stress cancellation Mechanical engineering and machinery Yu Liu verfasserin aut Xiao Ma verfasserin aut Xuefeng Wang verfasserin aut Xudong Zheng verfasserin aut Zhonghe Jin verfasserin aut In Micromachines MDPI AG, 2010 14(2023), 4, p 869 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:14 year:2023 number:4, p 869 https://doi.org/10.3390/mi14040869 kostenfrei https://doaj.org/article/3723260905334108906bd4fede7eecc6 kostenfrei https://www.mdpi.com/2072-666X/14/4/869 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 14 2023 4, p 869
allfieldsGer	10.3390/mi14040869 doi (DE-627)DOAJ089808061 (DE-599)DOAJ3723260905334108906bd4fede7eecc6 DE-627 ger DE-627 rakwb eng TJ1-1570 Guowen Liu verfasserin aut Research on a Method to Improve the Temperature Performance of an All-Silicon Accelerometer 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper presents a novel method for the performance of an all-silicon accelerometer by adjusting the ratio of the Si-SiO<sub<2</sub< bonding area, and the Au-Si bonding area in the anchor zone, with the aim of eliminating stress in the anchor region. The study includes the development of an accelerometer model and simulation analysis which demonstrates the stress maps of the accelerometer under different anchor–area ratios, which have a strong impact on the performance of the accelerometer. In practical applications, the deformation of the comb structure fixed by the anchor zone is influenced by the stress in the anchor region, causing a distorted nonlinear response signal. The simulation results demonstrate that when the area ratio of the Si-SiO<sub<2</sub< anchor zone to the Au-Si anchor zone decreases to 0.5, the stress in the anchor zone decreases significantly. Experimental results reveal that the full-temperature stability of zero-bias is optimized from 133 μg to 46 μg when the anchor–zone ratio of the accelerometer decreases from 0.8 to 0.5. At the same time, the full-temperature stability of the scale factor is optimized from 87 ppm to 32 ppm. Furthermore, zero-bias full-temperature stability and scale factor full-temperature stability are improved by 34.6% and 36.8%, respectively. MEMS accelerometer response signal anchor zone stress cancellation Mechanical engineering and machinery Yu Liu verfasserin aut Xiao Ma verfasserin aut Xuefeng Wang verfasserin aut Xudong Zheng verfasserin aut Zhonghe Jin verfasserin aut In Micromachines MDPI AG, 2010 14(2023), 4, p 869 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:14 year:2023 number:4, p 869 https://doi.org/10.3390/mi14040869 kostenfrei https://doaj.org/article/3723260905334108906bd4fede7eecc6 kostenfrei https://www.mdpi.com/2072-666X/14/4/869 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 14 2023 4, p 869
allfieldsSound	10.3390/mi14040869 doi (DE-627)DOAJ089808061 (DE-599)DOAJ3723260905334108906bd4fede7eecc6 DE-627 ger DE-627 rakwb eng TJ1-1570 Guowen Liu verfasserin aut Research on a Method to Improve the Temperature Performance of an All-Silicon Accelerometer 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper presents a novel method for the performance of an all-silicon accelerometer by adjusting the ratio of the Si-SiO<sub<2</sub< bonding area, and the Au-Si bonding area in the anchor zone, with the aim of eliminating stress in the anchor region. The study includes the development of an accelerometer model and simulation analysis which demonstrates the stress maps of the accelerometer under different anchor–area ratios, which have a strong impact on the performance of the accelerometer. In practical applications, the deformation of the comb structure fixed by the anchor zone is influenced by the stress in the anchor region, causing a distorted nonlinear response signal. The simulation results demonstrate that when the area ratio of the Si-SiO<sub<2</sub< anchor zone to the Au-Si anchor zone decreases to 0.5, the stress in the anchor zone decreases significantly. Experimental results reveal that the full-temperature stability of zero-bias is optimized from 133 μg to 46 μg when the anchor–zone ratio of the accelerometer decreases from 0.8 to 0.5. At the same time, the full-temperature stability of the scale factor is optimized from 87 ppm to 32 ppm. Furthermore, zero-bias full-temperature stability and scale factor full-temperature stability are improved by 34.6% and 36.8%, respectively. MEMS accelerometer response signal anchor zone stress cancellation Mechanical engineering and machinery Yu Liu verfasserin aut Xiao Ma verfasserin aut Xuefeng Wang verfasserin aut Xudong Zheng verfasserin aut Zhonghe Jin verfasserin aut In Micromachines MDPI AG, 2010 14(2023), 4, p 869 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:14 year:2023 number:4, p 869 https://doi.org/10.3390/mi14040869 kostenfrei https://doaj.org/article/3723260905334108906bd4fede7eecc6 kostenfrei https://www.mdpi.com/2072-666X/14/4/869 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 14 2023 4, p 869
language	English
source	In Micromachines 14(2023), 4, p 869 volume:14 year:2023 number:4, p 869
sourceStr	In Micromachines 14(2023), 4, p 869 volume:14 year:2023 number:4, p 869
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	MEMS accelerometer response signal anchor zone stress cancellation Mechanical engineering and machinery
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authorswithroles_txt_mv	Guowen Liu @@aut@@ Yu Liu @@aut@@ Xiao Ma @@aut@@ Xuefeng Wang @@aut@@ Xudong Zheng @@aut@@ Zhonghe Jin @@aut@@
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callnumber-first	T - Technology
author	Guowen Liu
spellingShingle	Guowen Liu misc TJ1-1570 misc MEMS accelerometer misc response signal misc anchor zone misc stress cancellation misc Mechanical engineering and machinery Research on a Method to Improve the Temperature Performance of an All-Silicon Accelerometer
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topic_title	TJ1-1570 Research on a Method to Improve the Temperature Performance of an All-Silicon Accelerometer MEMS accelerometer response signal anchor zone stress cancellation
topic	misc TJ1-1570 misc MEMS accelerometer misc response signal misc anchor zone misc stress cancellation misc Mechanical engineering and machinery
topic_unstemmed	misc TJ1-1570 misc MEMS accelerometer misc response signal misc anchor zone misc stress cancellation misc Mechanical engineering and machinery
topic_browse	misc TJ1-1570 misc MEMS accelerometer misc response signal misc anchor zone misc stress cancellation misc Mechanical engineering and machinery
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title	Research on a Method to Improve the Temperature Performance of an All-Silicon Accelerometer
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title_full	Research on a Method to Improve the Temperature Performance of an All-Silicon Accelerometer
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author_browse	Guowen Liu Yu Liu Xiao Ma Xuefeng Wang Xudong Zheng Zhonghe Jin
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title_sort	research on a method to improve the temperature performance of an all-silicon accelerometer
callnumber	TJ1-1570
title_auth	Research on a Method to Improve the Temperature Performance of an All-Silicon Accelerometer
abstract	This paper presents a novel method for the performance of an all-silicon accelerometer by adjusting the ratio of the Si-SiO<sub<2</sub< bonding area, and the Au-Si bonding area in the anchor zone, with the aim of eliminating stress in the anchor region. The study includes the development of an accelerometer model and simulation analysis which demonstrates the stress maps of the accelerometer under different anchor–area ratios, which have a strong impact on the performance of the accelerometer. In practical applications, the deformation of the comb structure fixed by the anchor zone is influenced by the stress in the anchor region, causing a distorted nonlinear response signal. The simulation results demonstrate that when the area ratio of the Si-SiO<sub<2</sub< anchor zone to the Au-Si anchor zone decreases to 0.5, the stress in the anchor zone decreases significantly. Experimental results reveal that the full-temperature stability of zero-bias is optimized from 133 μg to 46 μg when the anchor–zone ratio of the accelerometer decreases from 0.8 to 0.5. At the same time, the full-temperature stability of the scale factor is optimized from 87 ppm to 32 ppm. Furthermore, zero-bias full-temperature stability and scale factor full-temperature stability are improved by 34.6% and 36.8%, respectively.
abstractGer	This paper presents a novel method for the performance of an all-silicon accelerometer by adjusting the ratio of the Si-SiO<sub<2</sub< bonding area, and the Au-Si bonding area in the anchor zone, with the aim of eliminating stress in the anchor region. The study includes the development of an accelerometer model and simulation analysis which demonstrates the stress maps of the accelerometer under different anchor–area ratios, which have a strong impact on the performance of the accelerometer. In practical applications, the deformation of the comb structure fixed by the anchor zone is influenced by the stress in the anchor region, causing a distorted nonlinear response signal. The simulation results demonstrate that when the area ratio of the Si-SiO<sub<2</sub< anchor zone to the Au-Si anchor zone decreases to 0.5, the stress in the anchor zone decreases significantly. Experimental results reveal that the full-temperature stability of zero-bias is optimized from 133 μg to 46 μg when the anchor–zone ratio of the accelerometer decreases from 0.8 to 0.5. At the same time, the full-temperature stability of the scale factor is optimized from 87 ppm to 32 ppm. Furthermore, zero-bias full-temperature stability and scale factor full-temperature stability are improved by 34.6% and 36.8%, respectively.
abstract_unstemmed	This paper presents a novel method for the performance of an all-silicon accelerometer by adjusting the ratio of the Si-SiO<sub<2</sub< bonding area, and the Au-Si bonding area in the anchor zone, with the aim of eliminating stress in the anchor region. The study includes the development of an accelerometer model and simulation analysis which demonstrates the stress maps of the accelerometer under different anchor–area ratios, which have a strong impact on the performance of the accelerometer. In practical applications, the deformation of the comb structure fixed by the anchor zone is influenced by the stress in the anchor region, causing a distorted nonlinear response signal. The simulation results demonstrate that when the area ratio of the Si-SiO<sub<2</sub< anchor zone to the Au-Si anchor zone decreases to 0.5, the stress in the anchor zone decreases significantly. Experimental results reveal that the full-temperature stability of zero-bias is optimized from 133 μg to 46 μg when the anchor–zone ratio of the accelerometer decreases from 0.8 to 0.5. At the same time, the full-temperature stability of the scale factor is optimized from 87 ppm to 32 ppm. Furthermore, zero-bias full-temperature stability and scale factor full-temperature stability are improved by 34.6% and 36.8%, respectively.
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container_issue	4, p 869
title_short	Research on a Method to Improve the Temperature Performance of an All-Silicon Accelerometer
url	https://doi.org/10.3390/mi14040869 https://doaj.org/article/3723260905334108906bd4fede7eecc6 https://www.mdpi.com/2072-666X/14/4/869 https://doaj.org/toc/2072-666X
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author2	Yu Liu Xiao Ma Xuefeng Wang Xudong Zheng Zhonghe Jin
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doi_str	10.3390/mi14040869
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up_date	2024-07-04T00:44:20.125Z
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