Anisotropic Electronic Structure of the 2D Electron Gas at the AlOx/KTaO3(110) Interface
Abstract Oxide‐based 2D electron gases (2DEGs) have generated significant interest due to their potential for discovering novel physical properties. Among these, 2DEGs formed in KTaO3 stand out due to the recently discovered crystal face‐dependent superconductivity and large Rashba splitting, both o...
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Gespeichert in:
| Autor*in: |
Emanuel A. Martínez [verfasserIn] Ji Dai [verfasserIn] Massimo Tallarida [verfasserIn] Norbert M. Nemes [verfasserIn] Flavio Y. Bruno [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2023 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
In: Advanced Electronic Materials ; 9(2023), 10, Seite n/a-n/a volume:9 ; year:2023 ; number:10 ; pages:n/a-n/a |
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| Links: |
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| DOI / URN: |
10.1002/aelm.202300267 |
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DOAJ090880374 |
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| 520 | |a Abstract Oxide‐based 2D electron gases (2DEGs) have generated significant interest due to their potential for discovering novel physical properties. Among these, 2DEGs formed in KTaO3 stand out due to the recently discovered crystal face‐dependent superconductivity and large Rashba splitting, both of which hold potential for future oxide electronics devices. In this work, angle‐resolved photoemission spectroscopy is used to study the electronic structure of the 2DEG formed at the (110) surface of KTaO3 after deposition of a thin Al layer. The experiments reveal a remarkable anisotropy in the orbital character of the electron‐like dispersive bands, which form a Fermi surface consisting of two elliptical contours with their major axes perpendicular to each other. The measured electronic structure is used to constrain the modeling parameters of self‐consistent tight‐binding slab calculations of the band structure. In these calculations, an anisotropic Rashba splitting is found with a value as large as 4 meV at the Fermi level along the [−110] crystallographic direction. This large unconventional and anisotropic Rashba splitting is rationalized based on the orbital angular momentum formulation. These findings provide insights into the interpretation of spin‐orbitronics experiments and help to constrain models for superconductivity in the KTO(110)‐2DEG system. | ||
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10.1002/aelm.202300267 doi (DE-627)DOAJ090880374 (DE-599)DOAJd602d6792aaa47118bbfdab2371e20fe DE-627 ger DE-627 rakwb eng TK452-454.4 QC1-999 Emanuel A. Martínez verfasserin aut Anisotropic Electronic Structure of the 2D Electron Gas at the AlOx/KTaO3(110) Interface 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Oxide‐based 2D electron gases (2DEGs) have generated significant interest due to their potential for discovering novel physical properties. Among these, 2DEGs formed in KTaO3 stand out due to the recently discovered crystal face‐dependent superconductivity and large Rashba splitting, both of which hold potential for future oxide electronics devices. In this work, angle‐resolved photoemission spectroscopy is used to study the electronic structure of the 2DEG formed at the (110) surface of KTaO3 after deposition of a thin Al layer. The experiments reveal a remarkable anisotropy in the orbital character of the electron‐like dispersive bands, which form a Fermi surface consisting of two elliptical contours with their major axes perpendicular to each other. The measured electronic structure is used to constrain the modeling parameters of self‐consistent tight‐binding slab calculations of the band structure. In these calculations, an anisotropic Rashba splitting is found with a value as large as 4 meV at the Fermi level along the [−110] crystallographic direction. This large unconventional and anisotropic Rashba splitting is rationalized based on the orbital angular momentum formulation. These findings provide insights into the interpretation of spin‐orbitronics experiments and help to constrain models for superconductivity in the KTO(110)‐2DEG system. 2DEG ARPES electronic structure KTaO3 Rashba spin–orbit coupling Electric apparatus and materials. Electric circuits. Electric networks Physics Ji Dai verfasserin aut Massimo Tallarida verfasserin aut Norbert M. Nemes verfasserin aut Flavio Y. Bruno verfasserin aut In Advanced Electronic Materials 9(2023), 10, Seite n/a-n/a volume:9 year:2023 number:10 pages:n/a-n/a https://doi.org/10.1002/aelm.202300267 kostenfrei https://doaj.org/article/d602d6792aaa47118bbfdab2371e20fe kostenfrei https://doi.org/10.1002/aelm.202300267 kostenfrei https://doaj.org/toc/2199-160X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ AR 9 2023 10 n/a-n/a |
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10.1002/aelm.202300267 doi (DE-627)DOAJ090880374 (DE-599)DOAJd602d6792aaa47118bbfdab2371e20fe DE-627 ger DE-627 rakwb eng TK452-454.4 QC1-999 Emanuel A. Martínez verfasserin aut Anisotropic Electronic Structure of the 2D Electron Gas at the AlOx/KTaO3(110) Interface 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Oxide‐based 2D electron gases (2DEGs) have generated significant interest due to their potential for discovering novel physical properties. Among these, 2DEGs formed in KTaO3 stand out due to the recently discovered crystal face‐dependent superconductivity and large Rashba splitting, both of which hold potential for future oxide electronics devices. In this work, angle‐resolved photoemission spectroscopy is used to study the electronic structure of the 2DEG formed at the (110) surface of KTaO3 after deposition of a thin Al layer. The experiments reveal a remarkable anisotropy in the orbital character of the electron‐like dispersive bands, which form a Fermi surface consisting of two elliptical contours with their major axes perpendicular to each other. The measured electronic structure is used to constrain the modeling parameters of self‐consistent tight‐binding slab calculations of the band structure. In these calculations, an anisotropic Rashba splitting is found with a value as large as 4 meV at the Fermi level along the [−110] crystallographic direction. This large unconventional and anisotropic Rashba splitting is rationalized based on the orbital angular momentum formulation. These findings provide insights into the interpretation of spin‐orbitronics experiments and help to constrain models for superconductivity in the KTO(110)‐2DEG system. 2DEG ARPES electronic structure KTaO3 Rashba spin–orbit coupling Electric apparatus and materials. Electric circuits. Electric networks Physics Ji Dai verfasserin aut Massimo Tallarida verfasserin aut Norbert M. Nemes verfasserin aut Flavio Y. Bruno verfasserin aut In Advanced Electronic Materials 9(2023), 10, Seite n/a-n/a volume:9 year:2023 number:10 pages:n/a-n/a https://doi.org/10.1002/aelm.202300267 kostenfrei https://doaj.org/article/d602d6792aaa47118bbfdab2371e20fe kostenfrei https://doi.org/10.1002/aelm.202300267 kostenfrei https://doaj.org/toc/2199-160X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ AR 9 2023 10 n/a-n/a |
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10.1002/aelm.202300267 |
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verfasserin |
| title_sort |
anisotropic electronic structure of the 2d electron gas at the alox/ktao3(110) interface |
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TK452-454.4 |
| title_auth |
Anisotropic Electronic Structure of the 2D Electron Gas at the AlOx/KTaO3(110) Interface |
| abstract |
Abstract Oxide‐based 2D electron gases (2DEGs) have generated significant interest due to their potential for discovering novel physical properties. Among these, 2DEGs formed in KTaO3 stand out due to the recently discovered crystal face‐dependent superconductivity and large Rashba splitting, both of which hold potential for future oxide electronics devices. In this work, angle‐resolved photoemission spectroscopy is used to study the electronic structure of the 2DEG formed at the (110) surface of KTaO3 after deposition of a thin Al layer. The experiments reveal a remarkable anisotropy in the orbital character of the electron‐like dispersive bands, which form a Fermi surface consisting of two elliptical contours with their major axes perpendicular to each other. The measured electronic structure is used to constrain the modeling parameters of self‐consistent tight‐binding slab calculations of the band structure. In these calculations, an anisotropic Rashba splitting is found with a value as large as 4 meV at the Fermi level along the [−110] crystallographic direction. This large unconventional and anisotropic Rashba splitting is rationalized based on the orbital angular momentum formulation. These findings provide insights into the interpretation of spin‐orbitronics experiments and help to constrain models for superconductivity in the KTO(110)‐2DEG system. |
| abstractGer |
Abstract Oxide‐based 2D electron gases (2DEGs) have generated significant interest due to their potential for discovering novel physical properties. Among these, 2DEGs formed in KTaO3 stand out due to the recently discovered crystal face‐dependent superconductivity and large Rashba splitting, both of which hold potential for future oxide electronics devices. In this work, angle‐resolved photoemission spectroscopy is used to study the electronic structure of the 2DEG formed at the (110) surface of KTaO3 after deposition of a thin Al layer. The experiments reveal a remarkable anisotropy in the orbital character of the electron‐like dispersive bands, which form a Fermi surface consisting of two elliptical contours with their major axes perpendicular to each other. The measured electronic structure is used to constrain the modeling parameters of self‐consistent tight‐binding slab calculations of the band structure. In these calculations, an anisotropic Rashba splitting is found with a value as large as 4 meV at the Fermi level along the [−110] crystallographic direction. This large unconventional and anisotropic Rashba splitting is rationalized based on the orbital angular momentum formulation. These findings provide insights into the interpretation of spin‐orbitronics experiments and help to constrain models for superconductivity in the KTO(110)‐2DEG system. |
| abstract_unstemmed |
Abstract Oxide‐based 2D electron gases (2DEGs) have generated significant interest due to their potential for discovering novel physical properties. Among these, 2DEGs formed in KTaO3 stand out due to the recently discovered crystal face‐dependent superconductivity and large Rashba splitting, both of which hold potential for future oxide electronics devices. In this work, angle‐resolved photoemission spectroscopy is used to study the electronic structure of the 2DEG formed at the (110) surface of KTaO3 after deposition of a thin Al layer. The experiments reveal a remarkable anisotropy in the orbital character of the electron‐like dispersive bands, which form a Fermi surface consisting of two elliptical contours with their major axes perpendicular to each other. The measured electronic structure is used to constrain the modeling parameters of self‐consistent tight‐binding slab calculations of the band structure. In these calculations, an anisotropic Rashba splitting is found with a value as large as 4 meV at the Fermi level along the [−110] crystallographic direction. This large unconventional and anisotropic Rashba splitting is rationalized based on the orbital angular momentum formulation. These findings provide insights into the interpretation of spin‐orbitronics experiments and help to constrain models for superconductivity in the KTO(110)‐2DEG system. |
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| title_short |
Anisotropic Electronic Structure of the 2D Electron Gas at the AlOx/KTaO3(110) Interface |
| url |
https://doi.org/10.1002/aelm.202300267 https://doaj.org/article/d602d6792aaa47118bbfdab2371e20fe https://doaj.org/toc/2199-160X |
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| author2 |
Ji Dai Massimo Tallarida Norbert M. Nemes Flavio Y. Bruno |
| author2Str |
Ji Dai Massimo Tallarida Norbert M. Nemes Flavio Y. Bruno |
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TK - Electrical and Nuclear Engineering |
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| up_date |
2024-07-03T17:09:51.435Z |
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