Effects of background doping, interdiffusion and layer thickness fluctuation on the transport characteristics of THz quantum cascade lasers

Abstract In this work, we investigate the effects of n and p-type background doping, interface composition diffusion (interdiffusion) of the barrier material and layer thickness variation during molecular beam epitaxy (MBE) growth on transport characteristics of terahertz-frequency quantum cascade l...
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Autor*in:	Novak Stanojević [verfasserIn] Aleksandar Demić [verfasserIn] Nikola Vuković [verfasserIn] Paul Dean [verfasserIn] Zoran Ikonić [verfasserIn] Dragan Indjin [verfasserIn] Jelena Radovanović [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2024

Übergeordnetes Werk:	In: Scientific Reports - Nature Portfolio, 2011, 14(2024), 1, Seite 13
Übergeordnetes Werk:	volume:14 ; year:2024 ; number:1 ; pages:13

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.1038/s41598-024-55700-7

Katalog-ID:	DOAJ092313663

Internformat


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spelling	10.1038/s41598-024-55700-7 doi (DE-627)DOAJ092313663 (DE-599)DOAJa9129d27a7f94961821d8b0638fd5a4a DE-627 ger DE-627 rakwb eng Novak Stanojević verfasserin aut Effects of background doping, interdiffusion and layer thickness fluctuation on the transport characteristics of THz quantum cascade lasers 2024 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this work, we investigate the effects of n and p-type background doping, interface composition diffusion (interdiffusion) of the barrier material and layer thickness variation during molecular beam epitaxy (MBE) growth on transport characteristics of terahertz-frequency quantum cascade lasers (THz QCLs). We analysed four exemplary structures: a bound-to-continuum design, hybrid design, LO-phonon design and a two-well high-temperature performance LO-phonon design. The exemplary bound-to-continuum design has shown to be the most sensitive to the background doping as it stops lasing for concentrations around $$1.0\cdot 10^{15}$$ 1.0 · 10 15 – $$2.0\cdot 10^{15}$$ 2.0 · 10 15 cm $$^{-3}$$ - 3 . The LO-phonon design is the most sensitive to growth fluctuations during MBE and this is critical for novel LO-phonon structures optimised for high-temperature performance. We predict that interdiffusion mostly affects current density for designs with narrow barrier layers and higher $$\textrm{Al}$$ Al composition. We show that layer thickness variation leads to significant changes in material gain and current density, and in some cases to the growth of nonfunctional devices. These effects serve as a beacon of fundamental calibration steps required for successful realisation of THz QCLs. Medicine R Science Q Aleksandar Demić verfasserin aut Nikola Vuković verfasserin aut Paul Dean verfasserin aut Zoran Ikonić verfasserin aut Dragan Indjin verfasserin aut Jelena Radovanović verfasserin aut In Scientific Reports Nature Portfolio, 2011 14(2024), 1, Seite 13 (DE-627)663366712 (DE-600)2615211-3 20452322 nnns volume:14 year:2024 number:1 pages:13 https://doi.org/10.1038/s41598-024-55700-7 kostenfrei https://doaj.org/article/a9129d27a7f94961821d8b0638fd5a4a kostenfrei https://doi.org/10.1038/s41598-024-55700-7 kostenfrei https://doaj.org/toc/2045-2322 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_381 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 14 2024 1 13
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allfieldsGer	10.1038/s41598-024-55700-7 doi (DE-627)DOAJ092313663 (DE-599)DOAJa9129d27a7f94961821d8b0638fd5a4a DE-627 ger DE-627 rakwb eng Novak Stanojević verfasserin aut Effects of background doping, interdiffusion and layer thickness fluctuation on the transport characteristics of THz quantum cascade lasers 2024 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this work, we investigate the effects of n and p-type background doping, interface composition diffusion (interdiffusion) of the barrier material and layer thickness variation during molecular beam epitaxy (MBE) growth on transport characteristics of terahertz-frequency quantum cascade lasers (THz QCLs). We analysed four exemplary structures: a bound-to-continuum design, hybrid design, LO-phonon design and a two-well high-temperature performance LO-phonon design. The exemplary bound-to-continuum design has shown to be the most sensitive to the background doping as it stops lasing for concentrations around $$1.0\cdot 10^{15}$$ 1.0 · 10 15 – $$2.0\cdot 10^{15}$$ 2.0 · 10 15 cm $$^{-3}$$ - 3 . The LO-phonon design is the most sensitive to growth fluctuations during MBE and this is critical for novel LO-phonon structures optimised for high-temperature performance. We predict that interdiffusion mostly affects current density for designs with narrow barrier layers and higher $$\textrm{Al}$$ Al composition. We show that layer thickness variation leads to significant changes in material gain and current density, and in some cases to the growth of nonfunctional devices. These effects serve as a beacon of fundamental calibration steps required for successful realisation of THz QCLs. Medicine R Science Q Aleksandar Demić verfasserin aut Nikola Vuković verfasserin aut Paul Dean verfasserin aut Zoran Ikonić verfasserin aut Dragan Indjin verfasserin aut Jelena Radovanović verfasserin aut In Scientific Reports Nature Portfolio, 2011 14(2024), 1, Seite 13 (DE-627)663366712 (DE-600)2615211-3 20452322 nnns volume:14 year:2024 number:1 pages:13 https://doi.org/10.1038/s41598-024-55700-7 kostenfrei https://doaj.org/article/a9129d27a7f94961821d8b0638fd5a4a kostenfrei https://doi.org/10.1038/s41598-024-55700-7 kostenfrei https://doaj.org/toc/2045-2322 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_381 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 14 2024 1 13
allfieldsSound	10.1038/s41598-024-55700-7 doi (DE-627)DOAJ092313663 (DE-599)DOAJa9129d27a7f94961821d8b0638fd5a4a DE-627 ger DE-627 rakwb eng Novak Stanojević verfasserin aut Effects of background doping, interdiffusion and layer thickness fluctuation on the transport characteristics of THz quantum cascade lasers 2024 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this work, we investigate the effects of n and p-type background doping, interface composition diffusion (interdiffusion) of the barrier material and layer thickness variation during molecular beam epitaxy (MBE) growth on transport characteristics of terahertz-frequency quantum cascade lasers (THz QCLs). We analysed four exemplary structures: a bound-to-continuum design, hybrid design, LO-phonon design and a two-well high-temperature performance LO-phonon design. The exemplary bound-to-continuum design has shown to be the most sensitive to the background doping as it stops lasing for concentrations around $$1.0\cdot 10^{15}$$ 1.0 · 10 15 – $$2.0\cdot 10^{15}$$ 2.0 · 10 15 cm $$^{-3}$$ - 3 . The LO-phonon design is the most sensitive to growth fluctuations during MBE and this is critical for novel LO-phonon structures optimised for high-temperature performance. We predict that interdiffusion mostly affects current density for designs with narrow barrier layers and higher $$\textrm{Al}$$ Al composition. We show that layer thickness variation leads to significant changes in material gain and current density, and in some cases to the growth of nonfunctional devices. These effects serve as a beacon of fundamental calibration steps required for successful realisation of THz QCLs. Medicine R Science Q Aleksandar Demić verfasserin aut Nikola Vuković verfasserin aut Paul Dean verfasserin aut Zoran Ikonić verfasserin aut Dragan Indjin verfasserin aut Jelena Radovanović verfasserin aut In Scientific Reports Nature Portfolio, 2011 14(2024), 1, Seite 13 (DE-627)663366712 (DE-600)2615211-3 20452322 nnns volume:14 year:2024 number:1 pages:13 https://doi.org/10.1038/s41598-024-55700-7 kostenfrei https://doaj.org/article/a9129d27a7f94961821d8b0638fd5a4a kostenfrei https://doi.org/10.1038/s41598-024-55700-7 kostenfrei https://doaj.org/toc/2045-2322 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_381 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 14 2024 1 13
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author	Novak Stanojević
spellingShingle	Novak Stanojević misc Medicine misc R misc Science misc Q Effects of background doping, interdiffusion and layer thickness fluctuation on the transport characteristics of THz quantum cascade lasers
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topic_title	Effects of background doping, interdiffusion and layer thickness fluctuation on the transport characteristics of THz quantum cascade lasers
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title	Effects of background doping, interdiffusion and layer thickness fluctuation on the transport characteristics of THz quantum cascade lasers
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title_full	Effects of background doping, interdiffusion and layer thickness fluctuation on the transport characteristics of THz quantum cascade lasers
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author_browse	Novak Stanojević Aleksandar Demić Nikola Vuković Paul Dean Zoran Ikonić Dragan Indjin Jelena Radovanović
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title_sort	effects of background doping, interdiffusion and layer thickness fluctuation on the transport characteristics of thz quantum cascade lasers
title_auth	Effects of background doping, interdiffusion and layer thickness fluctuation on the transport characteristics of THz quantum cascade lasers
abstract	Abstract In this work, we investigate the effects of n and p-type background doping, interface composition diffusion (interdiffusion) of the barrier material and layer thickness variation during molecular beam epitaxy (MBE) growth on transport characteristics of terahertz-frequency quantum cascade lasers (THz QCLs). We analysed four exemplary structures: a bound-to-continuum design, hybrid design, LO-phonon design and a two-well high-temperature performance LO-phonon design. The exemplary bound-to-continuum design has shown to be the most sensitive to the background doping as it stops lasing for concentrations around $$1.0\cdot 10^{15}$$ 1.0 · 10 15 – $$2.0\cdot 10^{15}$$ 2.0 · 10 15 cm $$^{-3}$$ - 3 . The LO-phonon design is the most sensitive to growth fluctuations during MBE and this is critical for novel LO-phonon structures optimised for high-temperature performance. We predict that interdiffusion mostly affects current density for designs with narrow barrier layers and higher $$\textrm{Al}$$ Al composition. We show that layer thickness variation leads to significant changes in material gain and current density, and in some cases to the growth of nonfunctional devices. These effects serve as a beacon of fundamental calibration steps required for successful realisation of THz QCLs.
abstractGer	Abstract In this work, we investigate the effects of n and p-type background doping, interface composition diffusion (interdiffusion) of the barrier material and layer thickness variation during molecular beam epitaxy (MBE) growth on transport characteristics of terahertz-frequency quantum cascade lasers (THz QCLs). We analysed four exemplary structures: a bound-to-continuum design, hybrid design, LO-phonon design and a two-well high-temperature performance LO-phonon design. The exemplary bound-to-continuum design has shown to be the most sensitive to the background doping as it stops lasing for concentrations around $$1.0\cdot 10^{15}$$ 1.0 · 10 15 – $$2.0\cdot 10^{15}$$ 2.0 · 10 15 cm $$^{-3}$$ - 3 . The LO-phonon design is the most sensitive to growth fluctuations during MBE and this is critical for novel LO-phonon structures optimised for high-temperature performance. We predict that interdiffusion mostly affects current density for designs with narrow barrier layers and higher $$\textrm{Al}$$ Al composition. We show that layer thickness variation leads to significant changes in material gain and current density, and in some cases to the growth of nonfunctional devices. These effects serve as a beacon of fundamental calibration steps required for successful realisation of THz QCLs.
abstract_unstemmed	Abstract In this work, we investigate the effects of n and p-type background doping, interface composition diffusion (interdiffusion) of the barrier material and layer thickness variation during molecular beam epitaxy (MBE) growth on transport characteristics of terahertz-frequency quantum cascade lasers (THz QCLs). We analysed four exemplary structures: a bound-to-continuum design, hybrid design, LO-phonon design and a two-well high-temperature performance LO-phonon design. The exemplary bound-to-continuum design has shown to be the most sensitive to the background doping as it stops lasing for concentrations around $$1.0\cdot 10^{15}$$ 1.0 · 10 15 – $$2.0\cdot 10^{15}$$ 2.0 · 10 15 cm $$^{-3}$$ - 3 . The LO-phonon design is the most sensitive to growth fluctuations during MBE and this is critical for novel LO-phonon structures optimised for high-temperature performance. We predict that interdiffusion mostly affects current density for designs with narrow barrier layers and higher $$\textrm{Al}$$ Al composition. We show that layer thickness variation leads to significant changes in material gain and current density, and in some cases to the growth of nonfunctional devices. These effects serve as a beacon of fundamental calibration steps required for successful realisation of THz QCLs.
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title_short	Effects of background doping, interdiffusion and layer thickness fluctuation on the transport characteristics of THz quantum cascade lasers
url	https://doi.org/10.1038/s41598-024-55700-7 https://doaj.org/article/a9129d27a7f94961821d8b0638fd5a4a https://doaj.org/toc/2045-2322
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doi_str	10.1038/s41598-024-55700-7
up_date	2024-07-04T00:55:21.363Z
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Effects of background doping, interdiffusion and layer thickness fluctuation on the transport characteristics of THz quantum cascade lasers

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