Advances in the Application of Perovskite Materials
Highlights A comprehensive summary of the representative promising applications of metal halide perovskite materials, including traditional optoelectronic devices (solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices (artificial...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Lixiu Zhang [verfasserIn] Luyao Mei [verfasserIn] Kaiyang Wang [verfasserIn] Yinhua Lv [verfasserIn] Shuai Zhang [verfasserIn] Yaxiao Lian [verfasserIn] Xiaoke Liu [verfasserIn] Zhiwei Ma [verfasserIn] Guanjun Xiao [verfasserIn] Qiang Liu [verfasserIn] Shuaibo Zhai [verfasserIn] Shengli Zhang [verfasserIn] Gengling Liu [verfasserIn] Ligang Yuan [verfasserIn] Bingbing Guo [verfasserIn] Ziming Chen [verfasserIn] Keyu Wei [verfasserIn] Aqiang Liu [verfasserIn] Shizhong Yue [verfasserIn] Guangda Niu [verfasserIn] Xiyan Pan [verfasserIn] Jie Sun [verfasserIn] Yong Hua [verfasserIn] Wu-Qiang Wu [verfasserIn] Dawei Di [verfasserIn] Baodan Zhao [verfasserIn] Jianjun Tian [verfasserIn] Zhijie Wang [verfasserIn] Yang Yang [verfasserIn] Liang Chu [verfasserIn] Mingjian Yuan [verfasserIn] Haibo Zeng [verfasserIn] Hin-Lap Yip [verfasserIn] Keyou Yan [verfasserIn] Wentao Xu [verfasserIn] Lu Zhu [verfasserIn] Wenhua Zhang [verfasserIn] Guichuan Xing [verfasserIn] Feng Gao [verfasserIn] Liming Ding [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2023 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
In: Nano-Micro Letters - SpringerOpen, 2009, 15(2023), 1, Seite 48 |
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| Übergeordnetes Werk: |
volume:15 ; year:2023 ; number:1 ; pages:48 |
| Links: |
Link aufrufen |
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| DOI / URN: |
10.1007/s40820-023-01140-3 |
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| Katalog-ID: |
DOAJ09287648X |
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| 520 | |a Highlights A comprehensive summary of the representative promising applications of metal halide perovskite materials, including traditional optoelectronic devices (solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices (artificial synapses and memristors) and pressure-induced emission. For each application, the fundamentals of the field, the current progress and the remaining challenges are provided, based on the up-to-date works. | ||
| 650 | 4 | |a Perovskites | |
| 650 | 4 | |a Optoelectronic devices | |
| 650 | 4 | |a Neuromorphic devices | |
| 650 | 4 | |a Pressure-induced emission | |
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| 700 | 0 | |a Shuai Zhang |e verfasserin |4 aut | |
| 700 | 0 | |a Yaxiao Lian |e verfasserin |4 aut | |
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| 700 | 0 | |a Guanjun Xiao |e verfasserin |4 aut | |
| 700 | 0 | |a Qiang Liu |e verfasserin |4 aut | |
| 700 | 0 | |a Shuaibo Zhai |e verfasserin |4 aut | |
| 700 | 0 | |a Shengli Zhang |e verfasserin |4 aut | |
| 700 | 0 | |a Gengling Liu |e verfasserin |4 aut | |
| 700 | 0 | |a Ligang Yuan |e verfasserin |4 aut | |
| 700 | 0 | |a Bingbing Guo |e verfasserin |4 aut | |
| 700 | 0 | |a Ziming Chen |e verfasserin |4 aut | |
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| 700 | 0 | |a Wu-Qiang Wu |e verfasserin |4 aut | |
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| 700 | 0 | |a Yang Yang |e verfasserin |4 aut | |
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| 700 | 0 | |a Haibo Zeng |e verfasserin |4 aut | |
| 700 | 0 | |a Hin-Lap Yip |e verfasserin |4 aut | |
| 700 | 0 | |a Keyou Yan |e verfasserin |4 aut | |
| 700 | 0 | |a Wentao Xu |e verfasserin |4 aut | |
| 700 | 0 | |a Lu Zhu |e verfasserin |4 aut | |
| 700 | 0 | |a Wenhua Zhang |e verfasserin |4 aut | |
| 700 | 0 | |a Guichuan Xing |e verfasserin |4 aut | |
| 700 | 0 | |a Feng Gao |e verfasserin |4 aut | |
| 700 | 0 | |a Liming Ding |e verfasserin |4 aut | |
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10.1007/s40820-023-01140-3 doi (DE-627)DOAJ09287648X (DE-599)DOAJ9cdc47fcf2d348beafcd97d25f8384b8 DE-627 ger DE-627 rakwb eng Lixiu Zhang verfasserin aut Advances in the Application of Perovskite Materials 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Highlights A comprehensive summary of the representative promising applications of metal halide perovskite materials, including traditional optoelectronic devices (solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices (artificial synapses and memristors) and pressure-induced emission. For each application, the fundamentals of the field, the current progress and the remaining challenges are provided, based on the up-to-date works. Perovskites Optoelectronic devices Neuromorphic devices Pressure-induced emission Technology T Luyao Mei verfasserin aut Kaiyang Wang verfasserin aut Yinhua Lv verfasserin aut Shuai Zhang verfasserin aut Yaxiao Lian verfasserin aut Xiaoke Liu verfasserin aut Zhiwei Ma verfasserin aut Guanjun Xiao verfasserin aut Qiang Liu verfasserin aut Shuaibo Zhai verfasserin aut Shengli Zhang verfasserin aut Gengling Liu verfasserin aut Ligang Yuan verfasserin aut Bingbing Guo verfasserin aut Ziming Chen verfasserin aut Keyu Wei verfasserin aut Aqiang Liu verfasserin aut Shizhong Yue verfasserin aut Guangda Niu verfasserin aut Xiyan Pan verfasserin aut Jie Sun verfasserin aut Yong Hua verfasserin aut Wu-Qiang Wu verfasserin aut Dawei Di verfasserin aut Baodan Zhao verfasserin aut Jianjun Tian verfasserin aut Zhijie Wang verfasserin aut Yang Yang verfasserin aut Liang Chu verfasserin aut Mingjian Yuan verfasserin aut Haibo Zeng verfasserin aut Hin-Lap Yip verfasserin aut Keyou Yan verfasserin aut Wentao Xu verfasserin aut Lu Zhu verfasserin aut Wenhua Zhang verfasserin aut Guichuan Xing verfasserin aut Feng Gao verfasserin aut Liming Ding verfasserin aut In Nano-Micro Letters SpringerOpen, 2009 15(2023), 1, Seite 48 (DE-627)680319581 (DE-600)2642093-4 21505551 nnns volume:15 year:2023 number:1 pages:48 https://doi.org/10.1007/s40820-023-01140-3 kostenfrei https://doaj.org/article/9cdc47fcf2d348beafcd97d25f8384b8 kostenfrei https://doi.org/10.1007/s40820-023-01140-3 kostenfrei https://doaj.org/toc/2311-6706 Journal toc kostenfrei https://doaj.org/toc/2150-5551 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 15 2023 1 48 |
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10.1007/s40820-023-01140-3 doi (DE-627)DOAJ09287648X (DE-599)DOAJ9cdc47fcf2d348beafcd97d25f8384b8 DE-627 ger DE-627 rakwb eng Lixiu Zhang verfasserin aut Advances in the Application of Perovskite Materials 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Highlights A comprehensive summary of the representative promising applications of metal halide perovskite materials, including traditional optoelectronic devices (solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices (artificial synapses and memristors) and pressure-induced emission. For each application, the fundamentals of the field, the current progress and the remaining challenges are provided, based on the up-to-date works. Perovskites Optoelectronic devices Neuromorphic devices Pressure-induced emission Technology T Luyao Mei verfasserin aut Kaiyang Wang verfasserin aut Yinhua Lv verfasserin aut Shuai Zhang verfasserin aut Yaxiao Lian verfasserin aut Xiaoke Liu verfasserin aut Zhiwei Ma verfasserin aut Guanjun Xiao verfasserin aut Qiang Liu verfasserin aut Shuaibo Zhai verfasserin aut Shengli Zhang verfasserin aut Gengling Liu verfasserin aut Ligang Yuan verfasserin aut Bingbing Guo verfasserin aut Ziming Chen verfasserin aut Keyu Wei verfasserin aut Aqiang Liu verfasserin aut Shizhong Yue verfasserin aut Guangda Niu verfasserin aut Xiyan Pan verfasserin aut Jie Sun verfasserin aut Yong Hua verfasserin aut Wu-Qiang Wu verfasserin aut Dawei Di verfasserin aut Baodan Zhao verfasserin aut Jianjun Tian verfasserin aut Zhijie Wang verfasserin aut Yang Yang verfasserin aut Liang Chu verfasserin aut Mingjian Yuan verfasserin aut Haibo Zeng verfasserin aut Hin-Lap Yip verfasserin aut Keyou Yan verfasserin aut Wentao Xu verfasserin aut Lu Zhu verfasserin aut Wenhua Zhang verfasserin aut Guichuan Xing verfasserin aut Feng Gao verfasserin aut Liming Ding verfasserin aut In Nano-Micro Letters SpringerOpen, 2009 15(2023), 1, Seite 48 (DE-627)680319581 (DE-600)2642093-4 21505551 nnns volume:15 year:2023 number:1 pages:48 https://doi.org/10.1007/s40820-023-01140-3 kostenfrei https://doaj.org/article/9cdc47fcf2d348beafcd97d25f8384b8 kostenfrei https://doi.org/10.1007/s40820-023-01140-3 kostenfrei https://doaj.org/toc/2311-6706 Journal toc kostenfrei https://doaj.org/toc/2150-5551 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 15 2023 1 48 |
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10.1007/s40820-023-01140-3 doi (DE-627)DOAJ09287648X (DE-599)DOAJ9cdc47fcf2d348beafcd97d25f8384b8 DE-627 ger DE-627 rakwb eng Lixiu Zhang verfasserin aut Advances in the Application of Perovskite Materials 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Highlights A comprehensive summary of the representative promising applications of metal halide perovskite materials, including traditional optoelectronic devices (solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices (artificial synapses and memristors) and pressure-induced emission. For each application, the fundamentals of the field, the current progress and the remaining challenges are provided, based on the up-to-date works. Perovskites Optoelectronic devices Neuromorphic devices Pressure-induced emission Technology T Luyao Mei verfasserin aut Kaiyang Wang verfasserin aut Yinhua Lv verfasserin aut Shuai Zhang verfasserin aut Yaxiao Lian verfasserin aut Xiaoke Liu verfasserin aut Zhiwei Ma verfasserin aut Guanjun Xiao verfasserin aut Qiang Liu verfasserin aut Shuaibo Zhai verfasserin aut Shengli Zhang verfasserin aut Gengling Liu verfasserin aut Ligang Yuan verfasserin aut Bingbing Guo verfasserin aut Ziming Chen verfasserin aut Keyu Wei verfasserin aut Aqiang Liu verfasserin aut Shizhong Yue verfasserin aut Guangda Niu verfasserin aut Xiyan Pan verfasserin aut Jie Sun verfasserin aut Yong Hua verfasserin aut Wu-Qiang Wu verfasserin aut Dawei Di verfasserin aut Baodan Zhao verfasserin aut Jianjun Tian verfasserin aut Zhijie Wang verfasserin aut Yang Yang verfasserin aut Liang Chu verfasserin aut Mingjian Yuan verfasserin aut Haibo Zeng verfasserin aut Hin-Lap Yip verfasserin aut Keyou Yan verfasserin aut Wentao Xu verfasserin aut Lu Zhu verfasserin aut Wenhua Zhang verfasserin aut Guichuan Xing verfasserin aut Feng Gao verfasserin aut Liming Ding verfasserin aut In Nano-Micro Letters SpringerOpen, 2009 15(2023), 1, Seite 48 (DE-627)680319581 (DE-600)2642093-4 21505551 nnns volume:15 year:2023 number:1 pages:48 https://doi.org/10.1007/s40820-023-01140-3 kostenfrei https://doaj.org/article/9cdc47fcf2d348beafcd97d25f8384b8 kostenfrei https://doi.org/10.1007/s40820-023-01140-3 kostenfrei https://doaj.org/toc/2311-6706 Journal toc kostenfrei https://doaj.org/toc/2150-5551 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2027 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 15 2023 1 48 |
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Highlights A comprehensive summary of the representative promising applications of metal halide perovskite materials, including traditional optoelectronic devices (solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices (artificial synapses and memristors) and pressure-induced emission. For each application, the fundamentals of the field, the current progress and the remaining challenges are provided, based on the up-to-date works. |
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Highlights A comprehensive summary of the representative promising applications of metal halide perovskite materials, including traditional optoelectronic devices (solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices (artificial synapses and memristors) and pressure-induced emission. For each application, the fundamentals of the field, the current progress and the remaining challenges are provided, based on the up-to-date works. |
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Highlights A comprehensive summary of the representative promising applications of metal halide perovskite materials, including traditional optoelectronic devices (solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices (artificial synapses and memristors) and pressure-induced emission. For each application, the fundamentals of the field, the current progress and the remaining challenges are provided, based on the up-to-date works. |
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