Chiral and helical states in selective-area epitaxial heterostructure

Abstract The quasi-1D chiral edge states in a quantum anomalous Hall insulator are dissipationless, while the 2D helical surface states in a topological insulator are insensitive to spin-independent scatterings due to the topological protection. Both serve as essential ingredients for topological el...
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Autor*in:	Huimin Sun [verfasserIn] Yu Huang [verfasserIn] Mengyun He [verfasserIn] Yu Fu [verfasserIn] Sikang Zheng [verfasserIn] Bin Zhang [verfasserIn] Chen Wang [verfasserIn] Qing Lin He [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Übergeordnetes Werk:	In: Communications Physics - Nature Portfolio, 2018, 6(2023), 1, Seite 8
Übergeordnetes Werk:	volume:6 ; year:2023 ; number:1 ; pages:8

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.1038/s42005-023-01328-4

Katalog-ID:	DOAJ092915213

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520			\|a Abstract The quasi-1D chiral edge states in a quantum anomalous Hall insulator are dissipationless, while the 2D helical surface states in a topological insulator are insensitive to spin-independent scatterings due to the topological protection. Both serve as essential ingredients for topological electronics. Here, we integrate these states into a single device using selective area epitaxy based on the molecular beam epitaxy technique. The chiral edge state comes from the quantum anomalous Hall insulator Cr:(Bi,Sb)2Te3, while the helical surface state comes from the intrinsic topological insulator (Bi,Sb)2Te3 which only interfaces with a partial edge of the former, forming a selective-area heterostructure. At the heterointerface, the chiral state in Cr:(Bi,Sb)2Te3 is allowed to be scattered into (Bi,Sb)2Te3 so that the incoming current will be redistributed according to the coordination between the chirality and helicity. Our device enables the collaboration between chiral and helical states for low-dissipative transport with tunable current dimension.
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allfields	10.1038/s42005-023-01328-4 doi (DE-627)DOAJ092915213 (DE-599)DOAJa274a3a11c9e4c4d8ab1b02550bbeeab DE-627 ger DE-627 rakwb eng QB460-466 QC1-999 Huimin Sun verfasserin aut Chiral and helical states in selective-area epitaxial heterostructure 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The quasi-1D chiral edge states in a quantum anomalous Hall insulator are dissipationless, while the 2D helical surface states in a topological insulator are insensitive to spin-independent scatterings due to the topological protection. Both serve as essential ingredients for topological electronics. Here, we integrate these states into a single device using selective area epitaxy based on the molecular beam epitaxy technique. The chiral edge state comes from the quantum anomalous Hall insulator Cr:(Bi,Sb)2Te3, while the helical surface state comes from the intrinsic topological insulator (Bi,Sb)2Te3 which only interfaces with a partial edge of the former, forming a selective-area heterostructure. At the heterointerface, the chiral state in Cr:(Bi,Sb)2Te3 is allowed to be scattered into (Bi,Sb)2Te3 so that the incoming current will be redistributed according to the coordination between the chirality and helicity. Our device enables the collaboration between chiral and helical states for low-dissipative transport with tunable current dimension. Astrophysics Physics Yu Huang verfasserin aut Mengyun He verfasserin aut Yu Fu verfasserin aut Sikang Zheng verfasserin aut Bin Zhang verfasserin aut Chen Wang verfasserin aut Qing Lin He verfasserin aut In Communications Physics Nature Portfolio, 2018 6(2023), 1, Seite 8 (DE-627)1015215459 23993650 nnns volume:6 year:2023 number:1 pages:8 https://doi.org/10.1038/s42005-023-01328-4 kostenfrei https://doaj.org/article/a274a3a11c9e4c4d8ab1b02550bbeeab kostenfrei https://doi.org/10.1038/s42005-023-01328-4 kostenfrei https://doaj.org/toc/2399-3650 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 6 2023 1 8
spelling	10.1038/s42005-023-01328-4 doi (DE-627)DOAJ092915213 (DE-599)DOAJa274a3a11c9e4c4d8ab1b02550bbeeab DE-627 ger DE-627 rakwb eng QB460-466 QC1-999 Huimin Sun verfasserin aut Chiral and helical states in selective-area epitaxial heterostructure 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The quasi-1D chiral edge states in a quantum anomalous Hall insulator are dissipationless, while the 2D helical surface states in a topological insulator are insensitive to spin-independent scatterings due to the topological protection. Both serve as essential ingredients for topological electronics. Here, we integrate these states into a single device using selective area epitaxy based on the molecular beam epitaxy technique. The chiral edge state comes from the quantum anomalous Hall insulator Cr:(Bi,Sb)2Te3, while the helical surface state comes from the intrinsic topological insulator (Bi,Sb)2Te3 which only interfaces with a partial edge of the former, forming a selective-area heterostructure. At the heterointerface, the chiral state in Cr:(Bi,Sb)2Te3 is allowed to be scattered into (Bi,Sb)2Te3 so that the incoming current will be redistributed according to the coordination between the chirality and helicity. Our device enables the collaboration between chiral and helical states for low-dissipative transport with tunable current dimension. Astrophysics Physics Yu Huang verfasserin aut Mengyun He verfasserin aut Yu Fu verfasserin aut Sikang Zheng verfasserin aut Bin Zhang verfasserin aut Chen Wang verfasserin aut Qing Lin He verfasserin aut In Communications Physics Nature Portfolio, 2018 6(2023), 1, Seite 8 (DE-627)1015215459 23993650 nnns volume:6 year:2023 number:1 pages:8 https://doi.org/10.1038/s42005-023-01328-4 kostenfrei https://doaj.org/article/a274a3a11c9e4c4d8ab1b02550bbeeab kostenfrei https://doi.org/10.1038/s42005-023-01328-4 kostenfrei https://doaj.org/toc/2399-3650 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 6 2023 1 8
allfields_unstemmed	10.1038/s42005-023-01328-4 doi (DE-627)DOAJ092915213 (DE-599)DOAJa274a3a11c9e4c4d8ab1b02550bbeeab DE-627 ger DE-627 rakwb eng QB460-466 QC1-999 Huimin Sun verfasserin aut Chiral and helical states in selective-area epitaxial heterostructure 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The quasi-1D chiral edge states in a quantum anomalous Hall insulator are dissipationless, while the 2D helical surface states in a topological insulator are insensitive to spin-independent scatterings due to the topological protection. Both serve as essential ingredients for topological electronics. Here, we integrate these states into a single device using selective area epitaxy based on the molecular beam epitaxy technique. The chiral edge state comes from the quantum anomalous Hall insulator Cr:(Bi,Sb)2Te3, while the helical surface state comes from the intrinsic topological insulator (Bi,Sb)2Te3 which only interfaces with a partial edge of the former, forming a selective-area heterostructure. At the heterointerface, the chiral state in Cr:(Bi,Sb)2Te3 is allowed to be scattered into (Bi,Sb)2Te3 so that the incoming current will be redistributed according to the coordination between the chirality and helicity. Our device enables the collaboration between chiral and helical states for low-dissipative transport with tunable current dimension. Astrophysics Physics Yu Huang verfasserin aut Mengyun He verfasserin aut Yu Fu verfasserin aut Sikang Zheng verfasserin aut Bin Zhang verfasserin aut Chen Wang verfasserin aut Qing Lin He verfasserin aut In Communications Physics Nature Portfolio, 2018 6(2023), 1, Seite 8 (DE-627)1015215459 23993650 nnns volume:6 year:2023 number:1 pages:8 https://doi.org/10.1038/s42005-023-01328-4 kostenfrei https://doaj.org/article/a274a3a11c9e4c4d8ab1b02550bbeeab kostenfrei https://doi.org/10.1038/s42005-023-01328-4 kostenfrei https://doaj.org/toc/2399-3650 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 6 2023 1 8
allfieldsGer	10.1038/s42005-023-01328-4 doi (DE-627)DOAJ092915213 (DE-599)DOAJa274a3a11c9e4c4d8ab1b02550bbeeab DE-627 ger DE-627 rakwb eng QB460-466 QC1-999 Huimin Sun verfasserin aut Chiral and helical states in selective-area epitaxial heterostructure 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The quasi-1D chiral edge states in a quantum anomalous Hall insulator are dissipationless, while the 2D helical surface states in a topological insulator are insensitive to spin-independent scatterings due to the topological protection. Both serve as essential ingredients for topological electronics. Here, we integrate these states into a single device using selective area epitaxy based on the molecular beam epitaxy technique. The chiral edge state comes from the quantum anomalous Hall insulator Cr:(Bi,Sb)2Te3, while the helical surface state comes from the intrinsic topological insulator (Bi,Sb)2Te3 which only interfaces with a partial edge of the former, forming a selective-area heterostructure. At the heterointerface, the chiral state in Cr:(Bi,Sb)2Te3 is allowed to be scattered into (Bi,Sb)2Te3 so that the incoming current will be redistributed according to the coordination between the chirality and helicity. Our device enables the collaboration between chiral and helical states for low-dissipative transport with tunable current dimension. Astrophysics Physics Yu Huang verfasserin aut Mengyun He verfasserin aut Yu Fu verfasserin aut Sikang Zheng verfasserin aut Bin Zhang verfasserin aut Chen Wang verfasserin aut Qing Lin He verfasserin aut In Communications Physics Nature Portfolio, 2018 6(2023), 1, Seite 8 (DE-627)1015215459 23993650 nnns volume:6 year:2023 number:1 pages:8 https://doi.org/10.1038/s42005-023-01328-4 kostenfrei https://doaj.org/article/a274a3a11c9e4c4d8ab1b02550bbeeab kostenfrei https://doi.org/10.1038/s42005-023-01328-4 kostenfrei https://doaj.org/toc/2399-3650 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 6 2023 1 8
allfieldsSound	10.1038/s42005-023-01328-4 doi (DE-627)DOAJ092915213 (DE-599)DOAJa274a3a11c9e4c4d8ab1b02550bbeeab DE-627 ger DE-627 rakwb eng QB460-466 QC1-999 Huimin Sun verfasserin aut Chiral and helical states in selective-area epitaxial heterostructure 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The quasi-1D chiral edge states in a quantum anomalous Hall insulator are dissipationless, while the 2D helical surface states in a topological insulator are insensitive to spin-independent scatterings due to the topological protection. Both serve as essential ingredients for topological electronics. Here, we integrate these states into a single device using selective area epitaxy based on the molecular beam epitaxy technique. The chiral edge state comes from the quantum anomalous Hall insulator Cr:(Bi,Sb)2Te3, while the helical surface state comes from the intrinsic topological insulator (Bi,Sb)2Te3 which only interfaces with a partial edge of the former, forming a selective-area heterostructure. At the heterointerface, the chiral state in Cr:(Bi,Sb)2Te3 is allowed to be scattered into (Bi,Sb)2Te3 so that the incoming current will be redistributed according to the coordination between the chirality and helicity. Our device enables the collaboration between chiral and helical states for low-dissipative transport with tunable current dimension. Astrophysics Physics Yu Huang verfasserin aut Mengyun He verfasserin aut Yu Fu verfasserin aut Sikang Zheng verfasserin aut Bin Zhang verfasserin aut Chen Wang verfasserin aut Qing Lin He verfasserin aut In Communications Physics Nature Portfolio, 2018 6(2023), 1, Seite 8 (DE-627)1015215459 23993650 nnns volume:6 year:2023 number:1 pages:8 https://doi.org/10.1038/s42005-023-01328-4 kostenfrei https://doaj.org/article/a274a3a11c9e4c4d8ab1b02550bbeeab kostenfrei https://doi.org/10.1038/s42005-023-01328-4 kostenfrei https://doaj.org/toc/2399-3650 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2111 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 6 2023 1 8
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source	In Communications Physics 6(2023), 1, Seite 8 volume:6 year:2023 number:1 pages:8
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author	Huimin Sun
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title	Chiral and helical states in selective-area epitaxial heterostructure
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title_full	Chiral and helical states in selective-area epitaxial heterostructure
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title_sort	chiral and helical states in selective-area epitaxial heterostructure
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title_auth	Chiral and helical states in selective-area epitaxial heterostructure
abstract	Abstract The quasi-1D chiral edge states in a quantum anomalous Hall insulator are dissipationless, while the 2D helical surface states in a topological insulator are insensitive to spin-independent scatterings due to the topological protection. Both serve as essential ingredients for topological electronics. Here, we integrate these states into a single device using selective area epitaxy based on the molecular beam epitaxy technique. The chiral edge state comes from the quantum anomalous Hall insulator Cr:(Bi,Sb)2Te3, while the helical surface state comes from the intrinsic topological insulator (Bi,Sb)2Te3 which only interfaces with a partial edge of the former, forming a selective-area heterostructure. At the heterointerface, the chiral state in Cr:(Bi,Sb)2Te3 is allowed to be scattered into (Bi,Sb)2Te3 so that the incoming current will be redistributed according to the coordination between the chirality and helicity. Our device enables the collaboration between chiral and helical states for low-dissipative transport with tunable current dimension.
abstractGer	Abstract The quasi-1D chiral edge states in a quantum anomalous Hall insulator are dissipationless, while the 2D helical surface states in a topological insulator are insensitive to spin-independent scatterings due to the topological protection. Both serve as essential ingredients for topological electronics. Here, we integrate these states into a single device using selective area epitaxy based on the molecular beam epitaxy technique. The chiral edge state comes from the quantum anomalous Hall insulator Cr:(Bi,Sb)2Te3, while the helical surface state comes from the intrinsic topological insulator (Bi,Sb)2Te3 which only interfaces with a partial edge of the former, forming a selective-area heterostructure. At the heterointerface, the chiral state in Cr:(Bi,Sb)2Te3 is allowed to be scattered into (Bi,Sb)2Te3 so that the incoming current will be redistributed according to the coordination between the chirality and helicity. Our device enables the collaboration between chiral and helical states for low-dissipative transport with tunable current dimension.
abstract_unstemmed	Abstract The quasi-1D chiral edge states in a quantum anomalous Hall insulator are dissipationless, while the 2D helical surface states in a topological insulator are insensitive to spin-independent scatterings due to the topological protection. Both serve as essential ingredients for topological electronics. Here, we integrate these states into a single device using selective area epitaxy based on the molecular beam epitaxy technique. The chiral edge state comes from the quantum anomalous Hall insulator Cr:(Bi,Sb)2Te3, while the helical surface state comes from the intrinsic topological insulator (Bi,Sb)2Te3 which only interfaces with a partial edge of the former, forming a selective-area heterostructure. At the heterointerface, the chiral state in Cr:(Bi,Sb)2Te3 is allowed to be scattered into (Bi,Sb)2Te3 so that the incoming current will be redistributed according to the coordination between the chirality and helicity. Our device enables the collaboration between chiral and helical states for low-dissipative transport with tunable current dimension.
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title_short	Chiral and helical states in selective-area epitaxial heterostructure
url	https://doi.org/10.1038/s42005-023-01328-4 https://doaj.org/article/a274a3a11c9e4c4d8ab1b02550bbeeab https://doaj.org/toc/2399-3650
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