Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn Thin Films
This study investigated the effects of oxygen (O<sub<2</sub<) flow rates and annealing temperatures on optical, electrical, and structural properties of indium–gallium–zinc oxide (IGZO) film on glass substrates fabricated by using a co-sputtering system with two radio-frequency (RF) (In&...
Ausführliche Beschreibung
Autor*in: |
Yih-Shing Lee [verfasserIn] Sheng-Yu Zhao [verfasserIn] Yuan-Zhe Lin [verfasserIn] Glen Andrew Porter [verfasserIn] Tsung-Cheng Tien [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2023 |
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Übergeordnetes Werk: |
In: Crystals - MDPI AG, 2011, 13(2023), 1310, p 1310 |
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Übergeordnetes Werk: |
volume:13 ; year:2023 ; number:1310, p 1310 |
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DOI / URN: |
10.3390/cryst13091310 |
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Katalog-ID: |
DOAJ093430108 |
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10.3390/cryst13091310 doi (DE-627)DOAJ093430108 (DE-599)DOAJ2f2f583769df46d181ae9f424fcbcff2 DE-627 ger DE-627 rakwb eng QD901-999 Yih-Shing Lee verfasserin aut Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn Thin Films 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This study investigated the effects of oxygen (O<sub<2</sub<) flow rates and annealing temperatures on optical, electrical, and structural properties of indium–gallium–zinc oxide (IGZO) film on glass substrates fabricated by using a co-sputtering system with two radio-frequency (RF) (In<sub<2</sub<O<sub<3</sub< and Ga<sub<2</sub<O<sub<3</sub<) and one direct current (DC) (Zn) magnetron. The average transmittance and optical energy gap increased significantly when the oxygen flow rate was increased from 1 sccm to 3 sccm. An increased O<sub<2</sub< flow during co-sputtering IGZO films caused the crystallinity of the InGaZn<sub<7</sub<O<sub<10</sub< phase to increase, yielding a smoother and more uniform granular structure. The carrier mobility rose and the carrier concentration decreased with increasing O<sub<2</sub< flow. The results of X-ray photoelectron spectra (XPS) analyses explained the impacts of the O<sub<2</sub< flow rates and annealing temperatures on optical and electrical properties of the co-sputtered IGZO films. The optimum process conditions of the co-sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn films were revealed as an O<sub<2</sub< flow rate of 3 sccm and an annealing temperature at 300 °C, which showed the largest average transmittance of 82.48%, a larger optical bandgap of 3.21 eV, and a larger carrier mobility of 7.01 cm<sup<2</sup< V<sup<−1</sup<s<sup<−1</sup<. XPS results at various annealing temperatures indicated that the co-sputtered IGZO films with an O<sub<2</sub< flow rate of 3 sccm have more stable chemical compositions among different annealing temperatures. co-sputtering indium–gallium–zinc oxide (IGZO) film oxygen flow annealing temperature X-ray photoelectron spectra Crystallography Sheng-Yu Zhao verfasserin aut Yuan-Zhe Lin verfasserin aut Glen Andrew Porter verfasserin aut Tsung-Cheng Tien verfasserin aut In Crystals MDPI AG, 2011 13(2023), 1310, p 1310 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:13 year:2023 number:1310, p 1310 https://doi.org/10.3390/cryst13091310 kostenfrei https://doaj.org/article/2f2f583769df46d181ae9f424fcbcff2 kostenfrei https://www.mdpi.com/2073-4352/13/9/1310 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2023 1310, p 1310 |
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10.3390/cryst13091310 doi (DE-627)DOAJ093430108 (DE-599)DOAJ2f2f583769df46d181ae9f424fcbcff2 DE-627 ger DE-627 rakwb eng QD901-999 Yih-Shing Lee verfasserin aut Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn Thin Films 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This study investigated the effects of oxygen (O<sub<2</sub<) flow rates and annealing temperatures on optical, electrical, and structural properties of indium–gallium–zinc oxide (IGZO) film on glass substrates fabricated by using a co-sputtering system with two radio-frequency (RF) (In<sub<2</sub<O<sub<3</sub< and Ga<sub<2</sub<O<sub<3</sub<) and one direct current (DC) (Zn) magnetron. The average transmittance and optical energy gap increased significantly when the oxygen flow rate was increased from 1 sccm to 3 sccm. An increased O<sub<2</sub< flow during co-sputtering IGZO films caused the crystallinity of the InGaZn<sub<7</sub<O<sub<10</sub< phase to increase, yielding a smoother and more uniform granular structure. The carrier mobility rose and the carrier concentration decreased with increasing O<sub<2</sub< flow. The results of X-ray photoelectron spectra (XPS) analyses explained the impacts of the O<sub<2</sub< flow rates and annealing temperatures on optical and electrical properties of the co-sputtered IGZO films. The optimum process conditions of the co-sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn films were revealed as an O<sub<2</sub< flow rate of 3 sccm and an annealing temperature at 300 °C, which showed the largest average transmittance of 82.48%, a larger optical bandgap of 3.21 eV, and a larger carrier mobility of 7.01 cm<sup<2</sup< V<sup<−1</sup<s<sup<−1</sup<. XPS results at various annealing temperatures indicated that the co-sputtered IGZO films with an O<sub<2</sub< flow rate of 3 sccm have more stable chemical compositions among different annealing temperatures. co-sputtering indium–gallium–zinc oxide (IGZO) film oxygen flow annealing temperature X-ray photoelectron spectra Crystallography Sheng-Yu Zhao verfasserin aut Yuan-Zhe Lin verfasserin aut Glen Andrew Porter verfasserin aut Tsung-Cheng Tien verfasserin aut In Crystals MDPI AG, 2011 13(2023), 1310, p 1310 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:13 year:2023 number:1310, p 1310 https://doi.org/10.3390/cryst13091310 kostenfrei https://doaj.org/article/2f2f583769df46d181ae9f424fcbcff2 kostenfrei https://www.mdpi.com/2073-4352/13/9/1310 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2023 1310, p 1310 |
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10.3390/cryst13091310 doi (DE-627)DOAJ093430108 (DE-599)DOAJ2f2f583769df46d181ae9f424fcbcff2 DE-627 ger DE-627 rakwb eng QD901-999 Yih-Shing Lee verfasserin aut Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn Thin Films 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This study investigated the effects of oxygen (O<sub<2</sub<) flow rates and annealing temperatures on optical, electrical, and structural properties of indium–gallium–zinc oxide (IGZO) film on glass substrates fabricated by using a co-sputtering system with two radio-frequency (RF) (In<sub<2</sub<O<sub<3</sub< and Ga<sub<2</sub<O<sub<3</sub<) and one direct current (DC) (Zn) magnetron. The average transmittance and optical energy gap increased significantly when the oxygen flow rate was increased from 1 sccm to 3 sccm. An increased O<sub<2</sub< flow during co-sputtering IGZO films caused the crystallinity of the InGaZn<sub<7</sub<O<sub<10</sub< phase to increase, yielding a smoother and more uniform granular structure. The carrier mobility rose and the carrier concentration decreased with increasing O<sub<2</sub< flow. The results of X-ray photoelectron spectra (XPS) analyses explained the impacts of the O<sub<2</sub< flow rates and annealing temperatures on optical and electrical properties of the co-sputtered IGZO films. The optimum process conditions of the co-sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn films were revealed as an O<sub<2</sub< flow rate of 3 sccm and an annealing temperature at 300 °C, which showed the largest average transmittance of 82.48%, a larger optical bandgap of 3.21 eV, and a larger carrier mobility of 7.01 cm<sup<2</sup< V<sup<−1</sup<s<sup<−1</sup<. XPS results at various annealing temperatures indicated that the co-sputtered IGZO films with an O<sub<2</sub< flow rate of 3 sccm have more stable chemical compositions among different annealing temperatures. co-sputtering indium–gallium–zinc oxide (IGZO) film oxygen flow annealing temperature X-ray photoelectron spectra Crystallography Sheng-Yu Zhao verfasserin aut Yuan-Zhe Lin verfasserin aut Glen Andrew Porter verfasserin aut Tsung-Cheng Tien verfasserin aut In Crystals MDPI AG, 2011 13(2023), 1310, p 1310 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:13 year:2023 number:1310, p 1310 https://doi.org/10.3390/cryst13091310 kostenfrei https://doaj.org/article/2f2f583769df46d181ae9f424fcbcff2 kostenfrei https://www.mdpi.com/2073-4352/13/9/1310 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2023 1310, p 1310 |
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10.3390/cryst13091310 doi (DE-627)DOAJ093430108 (DE-599)DOAJ2f2f583769df46d181ae9f424fcbcff2 DE-627 ger DE-627 rakwb eng QD901-999 Yih-Shing Lee verfasserin aut Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn Thin Films 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This study investigated the effects of oxygen (O<sub<2</sub<) flow rates and annealing temperatures on optical, electrical, and structural properties of indium–gallium–zinc oxide (IGZO) film on glass substrates fabricated by using a co-sputtering system with two radio-frequency (RF) (In<sub<2</sub<O<sub<3</sub< and Ga<sub<2</sub<O<sub<3</sub<) and one direct current (DC) (Zn) magnetron. The average transmittance and optical energy gap increased significantly when the oxygen flow rate was increased from 1 sccm to 3 sccm. An increased O<sub<2</sub< flow during co-sputtering IGZO films caused the crystallinity of the InGaZn<sub<7</sub<O<sub<10</sub< phase to increase, yielding a smoother and more uniform granular structure. The carrier mobility rose and the carrier concentration decreased with increasing O<sub<2</sub< flow. The results of X-ray photoelectron spectra (XPS) analyses explained the impacts of the O<sub<2</sub< flow rates and annealing temperatures on optical and electrical properties of the co-sputtered IGZO films. The optimum process conditions of the co-sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn films were revealed as an O<sub<2</sub< flow rate of 3 sccm and an annealing temperature at 300 °C, which showed the largest average transmittance of 82.48%, a larger optical bandgap of 3.21 eV, and a larger carrier mobility of 7.01 cm<sup<2</sup< V<sup<−1</sup<s<sup<−1</sup<. XPS results at various annealing temperatures indicated that the co-sputtered IGZO films with an O<sub<2</sub< flow rate of 3 sccm have more stable chemical compositions among different annealing temperatures. co-sputtering indium–gallium–zinc oxide (IGZO) film oxygen flow annealing temperature X-ray photoelectron spectra Crystallography Sheng-Yu Zhao verfasserin aut Yuan-Zhe Lin verfasserin aut Glen Andrew Porter verfasserin aut Tsung-Cheng Tien verfasserin aut In Crystals MDPI AG, 2011 13(2023), 1310, p 1310 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:13 year:2023 number:1310, p 1310 https://doi.org/10.3390/cryst13091310 kostenfrei https://doaj.org/article/2f2f583769df46d181ae9f424fcbcff2 kostenfrei https://www.mdpi.com/2073-4352/13/9/1310 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2023 1310, p 1310 |
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effects of oxygen flows and annealing temperatures on optical, electrical, and structural properties of co-sputtered in<sub<2</sub<o<sub<3</sub<-ga<sub<2</sub<o<sub<3</sub<-zn thin films |
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Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn Thin Films |
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This study investigated the effects of oxygen (O<sub<2</sub<) flow rates and annealing temperatures on optical, electrical, and structural properties of indium–gallium–zinc oxide (IGZO) film on glass substrates fabricated by using a co-sputtering system with two radio-frequency (RF) (In<sub<2</sub<O<sub<3</sub< and Ga<sub<2</sub<O<sub<3</sub<) and one direct current (DC) (Zn) magnetron. The average transmittance and optical energy gap increased significantly when the oxygen flow rate was increased from 1 sccm to 3 sccm. An increased O<sub<2</sub< flow during co-sputtering IGZO films caused the crystallinity of the InGaZn<sub<7</sub<O<sub<10</sub< phase to increase, yielding a smoother and more uniform granular structure. The carrier mobility rose and the carrier concentration decreased with increasing O<sub<2</sub< flow. The results of X-ray photoelectron spectra (XPS) analyses explained the impacts of the O<sub<2</sub< flow rates and annealing temperatures on optical and electrical properties of the co-sputtered IGZO films. The optimum process conditions of the co-sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn films were revealed as an O<sub<2</sub< flow rate of 3 sccm and an annealing temperature at 300 °C, which showed the largest average transmittance of 82.48%, a larger optical bandgap of 3.21 eV, and a larger carrier mobility of 7.01 cm<sup<2</sup< V<sup<−1</sup<s<sup<−1</sup<. XPS results at various annealing temperatures indicated that the co-sputtered IGZO films with an O<sub<2</sub< flow rate of 3 sccm have more stable chemical compositions among different annealing temperatures. |
abstractGer |
This study investigated the effects of oxygen (O<sub<2</sub<) flow rates and annealing temperatures on optical, electrical, and structural properties of indium–gallium–zinc oxide (IGZO) film on glass substrates fabricated by using a co-sputtering system with two radio-frequency (RF) (In<sub<2</sub<O<sub<3</sub< and Ga<sub<2</sub<O<sub<3</sub<) and one direct current (DC) (Zn) magnetron. The average transmittance and optical energy gap increased significantly when the oxygen flow rate was increased from 1 sccm to 3 sccm. An increased O<sub<2</sub< flow during co-sputtering IGZO films caused the crystallinity of the InGaZn<sub<7</sub<O<sub<10</sub< phase to increase, yielding a smoother and more uniform granular structure. The carrier mobility rose and the carrier concentration decreased with increasing O<sub<2</sub< flow. The results of X-ray photoelectron spectra (XPS) analyses explained the impacts of the O<sub<2</sub< flow rates and annealing temperatures on optical and electrical properties of the co-sputtered IGZO films. The optimum process conditions of the co-sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn films were revealed as an O<sub<2</sub< flow rate of 3 sccm and an annealing temperature at 300 °C, which showed the largest average transmittance of 82.48%, a larger optical bandgap of 3.21 eV, and a larger carrier mobility of 7.01 cm<sup<2</sup< V<sup<−1</sup<s<sup<−1</sup<. XPS results at various annealing temperatures indicated that the co-sputtered IGZO films with an O<sub<2</sub< flow rate of 3 sccm have more stable chemical compositions among different annealing temperatures. |
abstract_unstemmed |
This study investigated the effects of oxygen (O<sub<2</sub<) flow rates and annealing temperatures on optical, electrical, and structural properties of indium–gallium–zinc oxide (IGZO) film on glass substrates fabricated by using a co-sputtering system with two radio-frequency (RF) (In<sub<2</sub<O<sub<3</sub< and Ga<sub<2</sub<O<sub<3</sub<) and one direct current (DC) (Zn) magnetron. The average transmittance and optical energy gap increased significantly when the oxygen flow rate was increased from 1 sccm to 3 sccm. An increased O<sub<2</sub< flow during co-sputtering IGZO films caused the crystallinity of the InGaZn<sub<7</sub<O<sub<10</sub< phase to increase, yielding a smoother and more uniform granular structure. The carrier mobility rose and the carrier concentration decreased with increasing O<sub<2</sub< flow. The results of X-ray photoelectron spectra (XPS) analyses explained the impacts of the O<sub<2</sub< flow rates and annealing temperatures on optical and electrical properties of the co-sputtered IGZO films. The optimum process conditions of the co-sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn films were revealed as an O<sub<2</sub< flow rate of 3 sccm and an annealing temperature at 300 °C, which showed the largest average transmittance of 82.48%, a larger optical bandgap of 3.21 eV, and a larger carrier mobility of 7.01 cm<sup<2</sup< V<sup<−1</sup<s<sup<−1</sup<. XPS results at various annealing temperatures indicated that the co-sputtered IGZO films with an O<sub<2</sub< flow rate of 3 sccm have more stable chemical compositions among different annealing temperatures. |
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container_issue |
1310, p 1310 |
title_short |
Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn Thin Films |
url |
https://doi.org/10.3390/cryst13091310 https://doaj.org/article/2f2f583769df46d181ae9f424fcbcff2 https://www.mdpi.com/2073-4352/13/9/1310 https://doaj.org/toc/2073-4352 |
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author2 |
Sheng-Yu Zhao Yuan-Zhe Lin Glen Andrew Porter Tsung-Cheng Tien |
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Sheng-Yu Zhao Yuan-Zhe Lin Glen Andrew Porter Tsung-Cheng Tien |
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up_date |
2024-07-03T17:16:11.495Z |
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