Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn Thin Films

This study investigated the effects of oxygen (O<sub<2</sub<) flow rates and annealing temperatures on optical, electrical, and structural properties of indium–gallium–zinc oxide (IGZO) film on glass substrates fabricated by using a co-sputtering system with two radio-frequency (RF) (In&...
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Autor*in:	Yih-Shing Lee [verfasserIn] Sheng-Yu Zhao [verfasserIn] Yuan-Zhe Lin [verfasserIn] Glen Andrew Porter [verfasserIn] Tsung-Cheng Tien [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	co-sputtering indium–gallium–zinc oxide (IGZO) film oxygen flow annealing temperature X-ray photoelectron spectra

Übergeordnetes Werk:	In: Crystals - MDPI AG, 2011, 13(2023), 1310, p 1310
Übergeordnetes Werk:	volume:13 ; year:2023 ; number:1310, p 1310

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/cryst13091310

Katalog-ID:	DOAJ093430108

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allfields	10.3390/cryst13091310 doi (DE-627)DOAJ093430108 (DE-599)DOAJ2f2f583769df46d181ae9f424fcbcff2 DE-627 ger DE-627 rakwb eng QD901-999 Yih-Shing Lee verfasserin aut Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn Thin Films 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This study investigated the effects of oxygen (O<sub<2</sub<) flow rates and annealing temperatures on optical, electrical, and structural properties of indium–gallium–zinc oxide (IGZO) film on glass substrates fabricated by using a co-sputtering system with two radio-frequency (RF) (In<sub<2</sub<O<sub<3</sub< and Ga<sub<2</sub<O<sub<3</sub<) and one direct current (DC) (Zn) magnetron. The average transmittance and optical energy gap increased significantly when the oxygen flow rate was increased from 1 sccm to 3 sccm. An increased O<sub<2</sub< flow during co-sputtering IGZO films caused the crystallinity of the InGaZn<sub<7</sub<O<sub<10</sub< phase to increase, yielding a smoother and more uniform granular structure. The carrier mobility rose and the carrier concentration decreased with increasing O<sub<2</sub< flow. The results of X-ray photoelectron spectra (XPS) analyses explained the impacts of the O<sub<2</sub< flow rates and annealing temperatures on optical and electrical properties of the co-sputtered IGZO films. The optimum process conditions of the co-sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn films were revealed as an O<sub<2</sub< flow rate of 3 sccm and an annealing temperature at 300 °C, which showed the largest average transmittance of 82.48%, a larger optical bandgap of 3.21 eV, and a larger carrier mobility of 7.01 cm<sup<2</sup< V<sup<−1</sup<s<sup<−1</sup<. XPS results at various annealing temperatures indicated that the co-sputtered IGZO films with an O<sub<2</sub< flow rate of 3 sccm have more stable chemical compositions among different annealing temperatures. co-sputtering indium–gallium–zinc oxide (IGZO) film oxygen flow annealing temperature X-ray photoelectron spectra Crystallography Sheng-Yu Zhao verfasserin aut Yuan-Zhe Lin verfasserin aut Glen Andrew Porter verfasserin aut Tsung-Cheng Tien verfasserin aut In Crystals MDPI AG, 2011 13(2023), 1310, p 1310 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:13 year:2023 number:1310, p 1310 https://doi.org/10.3390/cryst13091310 kostenfrei https://doaj.org/article/2f2f583769df46d181ae9f424fcbcff2 kostenfrei https://www.mdpi.com/2073-4352/13/9/1310 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2023 1310, p 1310
spelling	10.3390/cryst13091310 doi (DE-627)DOAJ093430108 (DE-599)DOAJ2f2f583769df46d181ae9f424fcbcff2 DE-627 ger DE-627 rakwb eng QD901-999 Yih-Shing Lee verfasserin aut Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn Thin Films 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This study investigated the effects of oxygen (O<sub<2</sub<) flow rates and annealing temperatures on optical, electrical, and structural properties of indium–gallium–zinc oxide (IGZO) film on glass substrates fabricated by using a co-sputtering system with two radio-frequency (RF) (In<sub<2</sub<O<sub<3</sub< and Ga<sub<2</sub<O<sub<3</sub<) and one direct current (DC) (Zn) magnetron. The average transmittance and optical energy gap increased significantly when the oxygen flow rate was increased from 1 sccm to 3 sccm. An increased O<sub<2</sub< flow during co-sputtering IGZO films caused the crystallinity of the InGaZn<sub<7</sub<O<sub<10</sub< phase to increase, yielding a smoother and more uniform granular structure. The carrier mobility rose and the carrier concentration decreased with increasing O<sub<2</sub< flow. The results of X-ray photoelectron spectra (XPS) analyses explained the impacts of the O<sub<2</sub< flow rates and annealing temperatures on optical and electrical properties of the co-sputtered IGZO films. The optimum process conditions of the co-sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn films were revealed as an O<sub<2</sub< flow rate of 3 sccm and an annealing temperature at 300 °C, which showed the largest average transmittance of 82.48%, a larger optical bandgap of 3.21 eV, and a larger carrier mobility of 7.01 cm<sup<2</sup< V<sup<−1</sup<s<sup<−1</sup<. XPS results at various annealing temperatures indicated that the co-sputtered IGZO films with an O<sub<2</sub< flow rate of 3 sccm have more stable chemical compositions among different annealing temperatures. co-sputtering indium–gallium–zinc oxide (IGZO) film oxygen flow annealing temperature X-ray photoelectron spectra Crystallography Sheng-Yu Zhao verfasserin aut Yuan-Zhe Lin verfasserin aut Glen Andrew Porter verfasserin aut Tsung-Cheng Tien verfasserin aut In Crystals MDPI AG, 2011 13(2023), 1310, p 1310 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:13 year:2023 number:1310, p 1310 https://doi.org/10.3390/cryst13091310 kostenfrei https://doaj.org/article/2f2f583769df46d181ae9f424fcbcff2 kostenfrei https://www.mdpi.com/2073-4352/13/9/1310 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2023 1310, p 1310
allfields_unstemmed	10.3390/cryst13091310 doi (DE-627)DOAJ093430108 (DE-599)DOAJ2f2f583769df46d181ae9f424fcbcff2 DE-627 ger DE-627 rakwb eng QD901-999 Yih-Shing Lee verfasserin aut Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn Thin Films 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This study investigated the effects of oxygen (O<sub<2</sub<) flow rates and annealing temperatures on optical, electrical, and structural properties of indium–gallium–zinc oxide (IGZO) film on glass substrates fabricated by using a co-sputtering system with two radio-frequency (RF) (In<sub<2</sub<O<sub<3</sub< and Ga<sub<2</sub<O<sub<3</sub<) and one direct current (DC) (Zn) magnetron. The average transmittance and optical energy gap increased significantly when the oxygen flow rate was increased from 1 sccm to 3 sccm. An increased O<sub<2</sub< flow during co-sputtering IGZO films caused the crystallinity of the InGaZn<sub<7</sub<O<sub<10</sub< phase to increase, yielding a smoother and more uniform granular structure. The carrier mobility rose and the carrier concentration decreased with increasing O<sub<2</sub< flow. The results of X-ray photoelectron spectra (XPS) analyses explained the impacts of the O<sub<2</sub< flow rates and annealing temperatures on optical and electrical properties of the co-sputtered IGZO films. The optimum process conditions of the co-sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn films were revealed as an O<sub<2</sub< flow rate of 3 sccm and an annealing temperature at 300 °C, which showed the largest average transmittance of 82.48%, a larger optical bandgap of 3.21 eV, and a larger carrier mobility of 7.01 cm<sup<2</sup< V<sup<−1</sup<s<sup<−1</sup<. XPS results at various annealing temperatures indicated that the co-sputtered IGZO films with an O<sub<2</sub< flow rate of 3 sccm have more stable chemical compositions among different annealing temperatures. co-sputtering indium–gallium–zinc oxide (IGZO) film oxygen flow annealing temperature X-ray photoelectron spectra Crystallography Sheng-Yu Zhao verfasserin aut Yuan-Zhe Lin verfasserin aut Glen Andrew Porter verfasserin aut Tsung-Cheng Tien verfasserin aut In Crystals MDPI AG, 2011 13(2023), 1310, p 1310 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:13 year:2023 number:1310, p 1310 https://doi.org/10.3390/cryst13091310 kostenfrei https://doaj.org/article/2f2f583769df46d181ae9f424fcbcff2 kostenfrei https://www.mdpi.com/2073-4352/13/9/1310 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2023 1310, p 1310
allfieldsGer	10.3390/cryst13091310 doi (DE-627)DOAJ093430108 (DE-599)DOAJ2f2f583769df46d181ae9f424fcbcff2 DE-627 ger DE-627 rakwb eng QD901-999 Yih-Shing Lee verfasserin aut Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn Thin Films 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This study investigated the effects of oxygen (O<sub<2</sub<) flow rates and annealing temperatures on optical, electrical, and structural properties of indium–gallium–zinc oxide (IGZO) film on glass substrates fabricated by using a co-sputtering system with two radio-frequency (RF) (In<sub<2</sub<O<sub<3</sub< and Ga<sub<2</sub<O<sub<3</sub<) and one direct current (DC) (Zn) magnetron. The average transmittance and optical energy gap increased significantly when the oxygen flow rate was increased from 1 sccm to 3 sccm. An increased O<sub<2</sub< flow during co-sputtering IGZO films caused the crystallinity of the InGaZn<sub<7</sub<O<sub<10</sub< phase to increase, yielding a smoother and more uniform granular structure. The carrier mobility rose and the carrier concentration decreased with increasing O<sub<2</sub< flow. The results of X-ray photoelectron spectra (XPS) analyses explained the impacts of the O<sub<2</sub< flow rates and annealing temperatures on optical and electrical properties of the co-sputtered IGZO films. The optimum process conditions of the co-sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn films were revealed as an O<sub<2</sub< flow rate of 3 sccm and an annealing temperature at 300 °C, which showed the largest average transmittance of 82.48%, a larger optical bandgap of 3.21 eV, and a larger carrier mobility of 7.01 cm<sup<2</sup< V<sup<−1</sup<s<sup<−1</sup<. XPS results at various annealing temperatures indicated that the co-sputtered IGZO films with an O<sub<2</sub< flow rate of 3 sccm have more stable chemical compositions among different annealing temperatures. co-sputtering indium–gallium–zinc oxide (IGZO) film oxygen flow annealing temperature X-ray photoelectron spectra Crystallography Sheng-Yu Zhao verfasserin aut Yuan-Zhe Lin verfasserin aut Glen Andrew Porter verfasserin aut Tsung-Cheng Tien verfasserin aut In Crystals MDPI AG, 2011 13(2023), 1310, p 1310 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:13 year:2023 number:1310, p 1310 https://doi.org/10.3390/cryst13091310 kostenfrei https://doaj.org/article/2f2f583769df46d181ae9f424fcbcff2 kostenfrei https://www.mdpi.com/2073-4352/13/9/1310 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2023 1310, p 1310
allfieldsSound	10.3390/cryst13091310 doi (DE-627)DOAJ093430108 (DE-599)DOAJ2f2f583769df46d181ae9f424fcbcff2 DE-627 ger DE-627 rakwb eng QD901-999 Yih-Shing Lee verfasserin aut Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn Thin Films 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This study investigated the effects of oxygen (O<sub<2</sub<) flow rates and annealing temperatures on optical, electrical, and structural properties of indium–gallium–zinc oxide (IGZO) film on glass substrates fabricated by using a co-sputtering system with two radio-frequency (RF) (In<sub<2</sub<O<sub<3</sub< and Ga<sub<2</sub<O<sub<3</sub<) and one direct current (DC) (Zn) magnetron. The average transmittance and optical energy gap increased significantly when the oxygen flow rate was increased from 1 sccm to 3 sccm. An increased O<sub<2</sub< flow during co-sputtering IGZO films caused the crystallinity of the InGaZn<sub<7</sub<O<sub<10</sub< phase to increase, yielding a smoother and more uniform granular structure. The carrier mobility rose and the carrier concentration decreased with increasing O<sub<2</sub< flow. The results of X-ray photoelectron spectra (XPS) analyses explained the impacts of the O<sub<2</sub< flow rates and annealing temperatures on optical and electrical properties of the co-sputtered IGZO films. The optimum process conditions of the co-sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn films were revealed as an O<sub<2</sub< flow rate of 3 sccm and an annealing temperature at 300 °C, which showed the largest average transmittance of 82.48%, a larger optical bandgap of 3.21 eV, and a larger carrier mobility of 7.01 cm<sup<2</sup< V<sup<−1</sup<s<sup<−1</sup<. XPS results at various annealing temperatures indicated that the co-sputtered IGZO films with an O<sub<2</sub< flow rate of 3 sccm have more stable chemical compositions among different annealing temperatures. co-sputtering indium–gallium–zinc oxide (IGZO) film oxygen flow annealing temperature X-ray photoelectron spectra Crystallography Sheng-Yu Zhao verfasserin aut Yuan-Zhe Lin verfasserin aut Glen Andrew Porter verfasserin aut Tsung-Cheng Tien verfasserin aut In Crystals MDPI AG, 2011 13(2023), 1310, p 1310 (DE-627)718303067 (DE-600)2661516-2 20734352 nnns volume:13 year:2023 number:1310, p 1310 https://doi.org/10.3390/cryst13091310 kostenfrei https://doaj.org/article/2f2f583769df46d181ae9f424fcbcff2 kostenfrei https://www.mdpi.com/2073-4352/13/9/1310 kostenfrei https://doaj.org/toc/2073-4352 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2023 1310, p 1310
language	English
source	In Crystals 13(2023), 1310, p 1310 volume:13 year:2023 number:1310, p 1310
sourceStr	In Crystals 13(2023), 1310, p 1310 volume:13 year:2023 number:1310, p 1310
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	co-sputtering indium–gallium–zinc oxide (IGZO) film oxygen flow annealing temperature X-ray photoelectron spectra Crystallography
isfreeaccess_bool	true
container_title	Crystals
authorswithroles_txt_mv	Yih-Shing Lee @@aut@@ Sheng-Yu Zhao @@aut@@ Yuan-Zhe Lin @@aut@@ Glen Andrew Porter @@aut@@ Tsung-Cheng Tien @@aut@@
publishDateDaySort_date	2023-01-01T00:00:00Z
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callnumber-first	Q - Science
author	Yih-Shing Lee
spellingShingle	Yih-Shing Lee misc QD901-999 misc co-sputtering indium–gallium–zinc oxide (IGZO) film misc oxygen flow misc annealing temperature misc X-ray photoelectron spectra misc Crystallography Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn Thin Films
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topic_title	QD901-999 Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn Thin Films co-sputtering indium–gallium–zinc oxide (IGZO) film oxygen flow annealing temperature X-ray photoelectron spectra
topic	misc QD901-999 misc co-sputtering indium–gallium–zinc oxide (IGZO) film misc oxygen flow misc annealing temperature misc X-ray photoelectron spectra misc Crystallography
topic_unstemmed	misc QD901-999 misc co-sputtering indium–gallium–zinc oxide (IGZO) film misc oxygen flow misc annealing temperature misc X-ray photoelectron spectra misc Crystallography
topic_browse	misc QD901-999 misc co-sputtering indium–gallium–zinc oxide (IGZO) film misc oxygen flow misc annealing temperature misc X-ray photoelectron spectra misc Crystallography
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title	Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn Thin Films
ctrlnum	(DE-627)DOAJ093430108 (DE-599)DOAJ2f2f583769df46d181ae9f424fcbcff2
title_full	Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn Thin Films
author_sort	Yih-Shing Lee
journal	Crystals
journalStr	Crystals
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lang_code	eng
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publishDateSort	2023
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author_browse	Yih-Shing Lee Sheng-Yu Zhao Yuan-Zhe Lin Glen Andrew Porter Tsung-Cheng Tien
container_volume	13
class	QD901-999
format_se	Elektronische Aufsätze
author-letter	Yih-Shing Lee
doi_str_mv	10.3390/cryst13091310
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title_sort	effects of oxygen flows and annealing temperatures on optical, electrical, and structural properties of co-sputtered in<sub<2</sub<o<sub<3</sub<-ga<sub<2</sub<o<sub<3</sub<-zn thin films
callnumber	QD901-999
title_auth	Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn Thin Films
abstract	This study investigated the effects of oxygen (O<sub<2</sub<) flow rates and annealing temperatures on optical, electrical, and structural properties of indium–gallium–zinc oxide (IGZO) film on glass substrates fabricated by using a co-sputtering system with two radio-frequency (RF) (In<sub<2</sub<O<sub<3</sub< and Ga<sub<2</sub<O<sub<3</sub<) and one direct current (DC) (Zn) magnetron. The average transmittance and optical energy gap increased significantly when the oxygen flow rate was increased from 1 sccm to 3 sccm. An increased O<sub<2</sub< flow during co-sputtering IGZO films caused the crystallinity of the InGaZn<sub<7</sub<O<sub<10</sub< phase to increase, yielding a smoother and more uniform granular structure. The carrier mobility rose and the carrier concentration decreased with increasing O<sub<2</sub< flow. The results of X-ray photoelectron spectra (XPS) analyses explained the impacts of the O<sub<2</sub< flow rates and annealing temperatures on optical and electrical properties of the co-sputtered IGZO films. The optimum process conditions of the co-sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn films were revealed as an O<sub<2</sub< flow rate of 3 sccm and an annealing temperature at 300 °C, which showed the largest average transmittance of 82.48%, a larger optical bandgap of 3.21 eV, and a larger carrier mobility of 7.01 cm<sup<2</sup< V<sup<−1</sup<s<sup<−1</sup<. XPS results at various annealing temperatures indicated that the co-sputtered IGZO films with an O<sub<2</sub< flow rate of 3 sccm have more stable chemical compositions among different annealing temperatures.
abstractGer	This study investigated the effects of oxygen (O<sub<2</sub<) flow rates and annealing temperatures on optical, electrical, and structural properties of indium–gallium–zinc oxide (IGZO) film on glass substrates fabricated by using a co-sputtering system with two radio-frequency (RF) (In<sub<2</sub<O<sub<3</sub< and Ga<sub<2</sub<O<sub<3</sub<) and one direct current (DC) (Zn) magnetron. The average transmittance and optical energy gap increased significantly when the oxygen flow rate was increased from 1 sccm to 3 sccm. An increased O<sub<2</sub< flow during co-sputtering IGZO films caused the crystallinity of the InGaZn<sub<7</sub<O<sub<10</sub< phase to increase, yielding a smoother and more uniform granular structure. The carrier mobility rose and the carrier concentration decreased with increasing O<sub<2</sub< flow. The results of X-ray photoelectron spectra (XPS) analyses explained the impacts of the O<sub<2</sub< flow rates and annealing temperatures on optical and electrical properties of the co-sputtered IGZO films. The optimum process conditions of the co-sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn films were revealed as an O<sub<2</sub< flow rate of 3 sccm and an annealing temperature at 300 °C, which showed the largest average transmittance of 82.48%, a larger optical bandgap of 3.21 eV, and a larger carrier mobility of 7.01 cm<sup<2</sup< V<sup<−1</sup<s<sup<−1</sup<. XPS results at various annealing temperatures indicated that the co-sputtered IGZO films with an O<sub<2</sub< flow rate of 3 sccm have more stable chemical compositions among different annealing temperatures.
abstract_unstemmed	This study investigated the effects of oxygen (O<sub<2</sub<) flow rates and annealing temperatures on optical, electrical, and structural properties of indium–gallium–zinc oxide (IGZO) film on glass substrates fabricated by using a co-sputtering system with two radio-frequency (RF) (In<sub<2</sub<O<sub<3</sub< and Ga<sub<2</sub<O<sub<3</sub<) and one direct current (DC) (Zn) magnetron. The average transmittance and optical energy gap increased significantly when the oxygen flow rate was increased from 1 sccm to 3 sccm. An increased O<sub<2</sub< flow during co-sputtering IGZO films caused the crystallinity of the InGaZn<sub<7</sub<O<sub<10</sub< phase to increase, yielding a smoother and more uniform granular structure. The carrier mobility rose and the carrier concentration decreased with increasing O<sub<2</sub< flow. The results of X-ray photoelectron spectra (XPS) analyses explained the impacts of the O<sub<2</sub< flow rates and annealing temperatures on optical and electrical properties of the co-sputtered IGZO films. The optimum process conditions of the co-sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn films were revealed as an O<sub<2</sub< flow rate of 3 sccm and an annealing temperature at 300 °C, which showed the largest average transmittance of 82.48%, a larger optical bandgap of 3.21 eV, and a larger carrier mobility of 7.01 cm<sup<2</sup< V<sup<−1</sup<s<sup<−1</sup<. XPS results at various annealing temperatures indicated that the co-sputtered IGZO films with an O<sub<2</sub< flow rate of 3 sccm have more stable chemical compositions among different annealing temperatures.
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container_issue	1310, p 1310
title_short	Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In<sub<2</sub<O<sub<3</sub<-Ga<sub<2</sub<O<sub<3</sub<-Zn Thin Films
url	https://doi.org/10.3390/cryst13091310 https://doaj.org/article/2f2f583769df46d181ae9f424fcbcff2 https://www.mdpi.com/2073-4352/13/9/1310 https://doaj.org/toc/2073-4352
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author2	Sheng-Yu Zhao Yuan-Zhe Lin Glen Andrew Porter Tsung-Cheng Tien
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doi_str	10.3390/cryst13091310
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up_date	2024-07-03T17:16:11.495Z
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