CMOS Tunable Pseudo-Resistor with Low Harmonic Distortion

In this work, a tunable pseudo-resistor was designed, simulated, and tested using a 0.35 µm CMOS technology. The proposal used a compact voltage bias circuit free of body-effect, allowing a constant resistance value over the pseudo-resistor’s dynamic range, improving its linearity. A fabricated cell...
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Autor*in:	Jesus E. Molinar-Solis [verfasserIn] Ivan Padilla-Cantoya [verfasserIn] Juan J. Ocampo-Hidalgo [verfasserIn] Sergio Sandoval-Perez [verfasserIn] Jose Rivera-Mejia [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	CMOS analog integrated circuits filter integrated circuit design

Übergeordnetes Werk:	In: Electronics - MDPI AG, 2013, 12(2023), 16, p 3376
Übergeordnetes Werk:	volume:12 ; year:2023 ; number:16, p 3376

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/electronics12163376

Katalog-ID:	DOAJ093626479

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520			\|a In this work, a tunable pseudo-resistor was designed, simulated, and tested using a 0.35 µm CMOS technology. The proposal used a compact voltage bias circuit free of body-effect, allowing a constant resistance value over the pseudo-resistor’s dynamic range, improving its linearity. A fabricated cell was characterized providing a resistance value from 300 kΩ to 10 GΩ with a THD from <2.5% to 1 GΩ. Additionally, the pseudo-resistor was incorporated into a high-pass OTA filter showing a THD below 0.2% for input voltages in the range ≤ 0.3 V<sub<p</sub<. The simulations were compared with experimental measurements in a CMOS-fabricated cell, which verified the proposal’s feasibility.
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allfields	10.3390/electronics12163376 doi (DE-627)DOAJ093626479 (DE-599)DOAJ9e05f974785a4a498d878e2558ec7636 DE-627 ger DE-627 rakwb eng TK7800-8360 Jesus E. Molinar-Solis verfasserin aut CMOS Tunable Pseudo-Resistor with Low Harmonic Distortion 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this work, a tunable pseudo-resistor was designed, simulated, and tested using a 0.35 µm CMOS technology. The proposal used a compact voltage bias circuit free of body-effect, allowing a constant resistance value over the pseudo-resistor’s dynamic range, improving its linearity. A fabricated cell was characterized providing a resistance value from 300 kΩ to 10 GΩ with a THD from <2.5% to 1 GΩ. Additionally, the pseudo-resistor was incorporated into a high-pass OTA filter showing a THD below 0.2% for input voltages in the range ≤ 0.3 V<sub<p</sub<. The simulations were compared with experimental measurements in a CMOS-fabricated cell, which verified the proposal’s feasibility. CMOS analog integrated circuits filter integrated circuit design Electronics Ivan Padilla-Cantoya verfasserin aut Juan J. Ocampo-Hidalgo verfasserin aut Sergio Sandoval-Perez verfasserin aut Jose Rivera-Mejia verfasserin aut In Electronics MDPI AG, 2013 12(2023), 16, p 3376 (DE-627)718626478 (DE-600)2662127-7 20799292 nnns volume:12 year:2023 number:16, p 3376 https://doi.org/10.3390/electronics12163376 kostenfrei https://doaj.org/article/9e05f974785a4a498d878e2558ec7636 kostenfrei https://www.mdpi.com/2079-9292/12/16/3376 kostenfrei https://doaj.org/toc/2079-9292 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2023 16, p 3376
spelling	10.3390/electronics12163376 doi (DE-627)DOAJ093626479 (DE-599)DOAJ9e05f974785a4a498d878e2558ec7636 DE-627 ger DE-627 rakwb eng TK7800-8360 Jesus E. Molinar-Solis verfasserin aut CMOS Tunable Pseudo-Resistor with Low Harmonic Distortion 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this work, a tunable pseudo-resistor was designed, simulated, and tested using a 0.35 µm CMOS technology. The proposal used a compact voltage bias circuit free of body-effect, allowing a constant resistance value over the pseudo-resistor’s dynamic range, improving its linearity. A fabricated cell was characterized providing a resistance value from 300 kΩ to 10 GΩ with a THD from <2.5% to 1 GΩ. Additionally, the pseudo-resistor was incorporated into a high-pass OTA filter showing a THD below 0.2% for input voltages in the range ≤ 0.3 V<sub<p</sub<. The simulations were compared with experimental measurements in a CMOS-fabricated cell, which verified the proposal’s feasibility. CMOS analog integrated circuits filter integrated circuit design Electronics Ivan Padilla-Cantoya verfasserin aut Juan J. Ocampo-Hidalgo verfasserin aut Sergio Sandoval-Perez verfasserin aut Jose Rivera-Mejia verfasserin aut In Electronics MDPI AG, 2013 12(2023), 16, p 3376 (DE-627)718626478 (DE-600)2662127-7 20799292 nnns volume:12 year:2023 number:16, p 3376 https://doi.org/10.3390/electronics12163376 kostenfrei https://doaj.org/article/9e05f974785a4a498d878e2558ec7636 kostenfrei https://www.mdpi.com/2079-9292/12/16/3376 kostenfrei https://doaj.org/toc/2079-9292 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2023 16, p 3376
allfields_unstemmed	10.3390/electronics12163376 doi (DE-627)DOAJ093626479 (DE-599)DOAJ9e05f974785a4a498d878e2558ec7636 DE-627 ger DE-627 rakwb eng TK7800-8360 Jesus E. Molinar-Solis verfasserin aut CMOS Tunable Pseudo-Resistor with Low Harmonic Distortion 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this work, a tunable pseudo-resistor was designed, simulated, and tested using a 0.35 µm CMOS technology. The proposal used a compact voltage bias circuit free of body-effect, allowing a constant resistance value over the pseudo-resistor’s dynamic range, improving its linearity. A fabricated cell was characterized providing a resistance value from 300 kΩ to 10 GΩ with a THD from <2.5% to 1 GΩ. Additionally, the pseudo-resistor was incorporated into a high-pass OTA filter showing a THD below 0.2% for input voltages in the range ≤ 0.3 V<sub<p</sub<. The simulations were compared with experimental measurements in a CMOS-fabricated cell, which verified the proposal’s feasibility. CMOS analog integrated circuits filter integrated circuit design Electronics Ivan Padilla-Cantoya verfasserin aut Juan J. Ocampo-Hidalgo verfasserin aut Sergio Sandoval-Perez verfasserin aut Jose Rivera-Mejia verfasserin aut In Electronics MDPI AG, 2013 12(2023), 16, p 3376 (DE-627)718626478 (DE-600)2662127-7 20799292 nnns volume:12 year:2023 number:16, p 3376 https://doi.org/10.3390/electronics12163376 kostenfrei https://doaj.org/article/9e05f974785a4a498d878e2558ec7636 kostenfrei https://www.mdpi.com/2079-9292/12/16/3376 kostenfrei https://doaj.org/toc/2079-9292 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2023 16, p 3376
allfieldsGer	10.3390/electronics12163376 doi (DE-627)DOAJ093626479 (DE-599)DOAJ9e05f974785a4a498d878e2558ec7636 DE-627 ger DE-627 rakwb eng TK7800-8360 Jesus E. Molinar-Solis verfasserin aut CMOS Tunable Pseudo-Resistor with Low Harmonic Distortion 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this work, a tunable pseudo-resistor was designed, simulated, and tested using a 0.35 µm CMOS technology. The proposal used a compact voltage bias circuit free of body-effect, allowing a constant resistance value over the pseudo-resistor’s dynamic range, improving its linearity. A fabricated cell was characterized providing a resistance value from 300 kΩ to 10 GΩ with a THD from <2.5% to 1 GΩ. Additionally, the pseudo-resistor was incorporated into a high-pass OTA filter showing a THD below 0.2% for input voltages in the range ≤ 0.3 V<sub<p</sub<. The simulations were compared with experimental measurements in a CMOS-fabricated cell, which verified the proposal’s feasibility. CMOS analog integrated circuits filter integrated circuit design Electronics Ivan Padilla-Cantoya verfasserin aut Juan J. Ocampo-Hidalgo verfasserin aut Sergio Sandoval-Perez verfasserin aut Jose Rivera-Mejia verfasserin aut In Electronics MDPI AG, 2013 12(2023), 16, p 3376 (DE-627)718626478 (DE-600)2662127-7 20799292 nnns volume:12 year:2023 number:16, p 3376 https://doi.org/10.3390/electronics12163376 kostenfrei https://doaj.org/article/9e05f974785a4a498d878e2558ec7636 kostenfrei https://www.mdpi.com/2079-9292/12/16/3376 kostenfrei https://doaj.org/toc/2079-9292 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2023 16, p 3376
allfieldsSound	10.3390/electronics12163376 doi (DE-627)DOAJ093626479 (DE-599)DOAJ9e05f974785a4a498d878e2558ec7636 DE-627 ger DE-627 rakwb eng TK7800-8360 Jesus E. Molinar-Solis verfasserin aut CMOS Tunable Pseudo-Resistor with Low Harmonic Distortion 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this work, a tunable pseudo-resistor was designed, simulated, and tested using a 0.35 µm CMOS technology. The proposal used a compact voltage bias circuit free of body-effect, allowing a constant resistance value over the pseudo-resistor’s dynamic range, improving its linearity. A fabricated cell was characterized providing a resistance value from 300 kΩ to 10 GΩ with a THD from <2.5% to 1 GΩ. Additionally, the pseudo-resistor was incorporated into a high-pass OTA filter showing a THD below 0.2% for input voltages in the range ≤ 0.3 V<sub<p</sub<. The simulations were compared with experimental measurements in a CMOS-fabricated cell, which verified the proposal’s feasibility. CMOS analog integrated circuits filter integrated circuit design Electronics Ivan Padilla-Cantoya verfasserin aut Juan J. Ocampo-Hidalgo verfasserin aut Sergio Sandoval-Perez verfasserin aut Jose Rivera-Mejia verfasserin aut In Electronics MDPI AG, 2013 12(2023), 16, p 3376 (DE-627)718626478 (DE-600)2662127-7 20799292 nnns volume:12 year:2023 number:16, p 3376 https://doi.org/10.3390/electronics12163376 kostenfrei https://doaj.org/article/9e05f974785a4a498d878e2558ec7636 kostenfrei https://www.mdpi.com/2079-9292/12/16/3376 kostenfrei https://doaj.org/toc/2079-9292 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 12 2023 16, p 3376
language	English
source	In Electronics 12(2023), 16, p 3376 volume:12 year:2023 number:16, p 3376
sourceStr	In Electronics 12(2023), 16, p 3376 volume:12 year:2023 number:16, p 3376
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	CMOS analog integrated circuits filter integrated circuit design Electronics
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container_title	Electronics
authorswithroles_txt_mv	Jesus E. Molinar-Solis @@aut@@ Ivan Padilla-Cantoya @@aut@@ Juan J. Ocampo-Hidalgo @@aut@@ Sergio Sandoval-Perez @@aut@@ Jose Rivera-Mejia @@aut@@
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callnumber-first	T - Technology
author	Jesus E. Molinar-Solis
spellingShingle	Jesus E. Molinar-Solis misc TK7800-8360 misc CMOS analog integrated circuits misc filter misc integrated circuit design misc Electronics CMOS Tunable Pseudo-Resistor with Low Harmonic Distortion
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topic_title	TK7800-8360 CMOS Tunable Pseudo-Resistor with Low Harmonic Distortion CMOS analog integrated circuits filter integrated circuit design
topic	misc TK7800-8360 misc CMOS analog integrated circuits misc filter misc integrated circuit design misc Electronics
topic_unstemmed	misc TK7800-8360 misc CMOS analog integrated circuits misc filter misc integrated circuit design misc Electronics
topic_browse	misc TK7800-8360 misc CMOS analog integrated circuits misc filter misc integrated circuit design misc Electronics
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title	CMOS Tunable Pseudo-Resistor with Low Harmonic Distortion
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title_full	CMOS Tunable Pseudo-Resistor with Low Harmonic Distortion
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author_browse	Jesus E. Molinar-Solis Ivan Padilla-Cantoya Juan J. Ocampo-Hidalgo Sergio Sandoval-Perez Jose Rivera-Mejia
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title_sort	cmos tunable pseudo-resistor with low harmonic distortion
callnumber	TK7800-8360
title_auth	CMOS Tunable Pseudo-Resistor with Low Harmonic Distortion
abstract	In this work, a tunable pseudo-resistor was designed, simulated, and tested using a 0.35 µm CMOS technology. The proposal used a compact voltage bias circuit free of body-effect, allowing a constant resistance value over the pseudo-resistor’s dynamic range, improving its linearity. A fabricated cell was characterized providing a resistance value from 300 kΩ to 10 GΩ with a THD from <2.5% to 1 GΩ. Additionally, the pseudo-resistor was incorporated into a high-pass OTA filter showing a THD below 0.2% for input voltages in the range ≤ 0.3 V<sub<p</sub<. The simulations were compared with experimental measurements in a CMOS-fabricated cell, which verified the proposal’s feasibility.
abstractGer	In this work, a tunable pseudo-resistor was designed, simulated, and tested using a 0.35 µm CMOS technology. The proposal used a compact voltage bias circuit free of body-effect, allowing a constant resistance value over the pseudo-resistor’s dynamic range, improving its linearity. A fabricated cell was characterized providing a resistance value from 300 kΩ to 10 GΩ with a THD from <2.5% to 1 GΩ. Additionally, the pseudo-resistor was incorporated into a high-pass OTA filter showing a THD below 0.2% for input voltages in the range ≤ 0.3 V<sub<p</sub<. The simulations were compared with experimental measurements in a CMOS-fabricated cell, which verified the proposal’s feasibility.
abstract_unstemmed	In this work, a tunable pseudo-resistor was designed, simulated, and tested using a 0.35 µm CMOS technology. The proposal used a compact voltage bias circuit free of body-effect, allowing a constant resistance value over the pseudo-resistor’s dynamic range, improving its linearity. A fabricated cell was characterized providing a resistance value from 300 kΩ to 10 GΩ with a THD from <2.5% to 1 GΩ. Additionally, the pseudo-resistor was incorporated into a high-pass OTA filter showing a THD below 0.2% for input voltages in the range ≤ 0.3 V<sub<p</sub<. The simulations were compared with experimental measurements in a CMOS-fabricated cell, which verified the proposal’s feasibility.
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title_short	CMOS Tunable Pseudo-Resistor with Low Harmonic Distortion
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author2	Ivan Padilla-Cantoya Juan J. Ocampo-Hidalgo Sergio Sandoval-Perez Jose Rivera-Mejia
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up_date	2024-07-03T18:26:59.098Z
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