Enhanced Optical Response of SnS/SnS<sub<2</sub< Layered Heterostructure
The SnS/SnS<sub<2</sub< heterostructure was fabricated by the chemical vapor deposition method. The crystal structure properties of SnS<sub<2</sub< and SnS were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and field emission scanning electron microsco...
Ausführliche Beschreibung
Autor*in: |
Der-Yuh Lin [verfasserIn] Hung-Pin Hsu [verfasserIn] Kuang-Hsin Liu [verfasserIn] Po-Hung Wu [verfasserIn] Yu-Tai Shih [verfasserIn] Ya-Fen Wu [verfasserIn] Yi-Ping Wang [verfasserIn] Chia-Feng Lin [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch |
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2023 |
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Übergeordnetes Werk: |
In: Sensors - MDPI AG, 2003, 23(2023), 10, p 4976 |
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Übergeordnetes Werk: |
volume:23 ; year:2023 ; number:10, p 4976 |
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DOI / URN: |
10.3390/s23104976 |
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Katalog-ID: |
DOAJ094309736 |
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LEADER | 01000naa a22002652 4500 | ||
---|---|---|---|
001 | DOAJ094309736 | ||
003 | DE-627 | ||
005 | 20240413032943.0 | ||
007 | cr uuu---uuuuu | ||
008 | 240413s2023 xx |||||o 00| ||eng c | ||
024 | 7 | |a 10.3390/s23104976 |2 doi | |
035 | |a (DE-627)DOAJ094309736 | ||
035 | |a (DE-599)DOAJ1041217007864fb9aaf94985de461f10 | ||
040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
041 | |a eng | ||
050 | 0 | |a TP1-1185 | |
100 | 0 | |a Der-Yuh Lin |e verfasserin |4 aut | |
245 | 1 | 0 | |a Enhanced Optical Response of SnS/SnS<sub<2</sub< Layered Heterostructure |
264 | 1 | |c 2023 | |
336 | |a Text |b txt |2 rdacontent | ||
337 | |a Computermedien |b c |2 rdamedia | ||
338 | |a Online-Ressource |b cr |2 rdacarrier | ||
520 | |a The SnS/SnS<sub<2</sub< heterostructure was fabricated by the chemical vapor deposition method. The crystal structure properties of SnS<sub<2</sub< and SnS were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and field emission scanning electron microscopy (FESEM). The frequency dependence photoconductivity explores its carrier kinetic decay process. The SnS/SnS<sub<2</sub< heterostructure shows that the ratio of short time constant decay process reaches 0.729 with a time constant of 4.3 × 10<sup<−4</sup< s. The power-dependent photoresponsivity investigates the mechanism of electron–hole pair recombination. The results indicate that the photoresponsivity of the SnS/SnS<sub<2</sub< heterostructure has been increased to 7.31 × 10<sup<−3</sup< A/W, representing a significant enhancement of approximately 7 times that of the individual films. The results show the optical response speed has been improved by using the SnS/SnS<sub<2</sub< heterostructure. These results indicate an application potential of the layered SnS/SnS<sub<2</sub< heterostructure for photodetection. This research provides valuable insights into the preparation of the heterostructure composed of SnS and SnS<sub<2</sub<, and presents an approach for designing high-performance photodetection devices. | ||
650 | 4 | |a heterostructure | |
650 | 4 | |a photoresponsivity | |
650 | 4 | |a chemical vapor deposition | |
653 | 0 | |a Chemical technology | |
700 | 0 | |a Hung-Pin Hsu |e verfasserin |4 aut | |
700 | 0 | |a Kuang-Hsin Liu |e verfasserin |4 aut | |
700 | 0 | |a Po-Hung Wu |e verfasserin |4 aut | |
700 | 0 | |a Yu-Tai Shih |e verfasserin |4 aut | |
700 | 0 | |a Ya-Fen Wu |e verfasserin |4 aut | |
700 | 0 | |a Yi-Ping Wang |e verfasserin |4 aut | |
700 | 0 | |a Chia-Feng Lin |e verfasserin |4 aut | |
773 | 0 | 8 | |i In |t Sensors |d MDPI AG, 2003 |g 23(2023), 10, p 4976 |w (DE-627)331640910 |w (DE-600)2052857-7 |x 14248220 |7 nnns |
773 | 1 | 8 | |g volume:23 |g year:2023 |g number:10, p 4976 |
856 | 4 | 0 | |u https://doi.org/10.3390/s23104976 |z kostenfrei |
856 | 4 | 0 | |u https://doaj.org/article/1041217007864fb9aaf94985de461f10 |z kostenfrei |
856 | 4 | 0 | |u https://www.mdpi.com/1424-8220/23/10/4976 |z kostenfrei |
856 | 4 | 2 | |u https://doaj.org/toc/1424-8220 |y Journal toc |z kostenfrei |
912 | |a GBV_USEFLAG_A | ||
912 | |a SYSFLAG_A | ||
912 | |a GBV_DOAJ | ||
912 | |a GBV_ILN_20 | ||
912 | |a GBV_ILN_22 | ||
912 | |a GBV_ILN_23 | ||
912 | |a GBV_ILN_24 | ||
912 | |a GBV_ILN_31 | ||
912 | |a GBV_ILN_39 | ||
912 | |a GBV_ILN_40 | ||
912 | |a GBV_ILN_60 | ||
912 | |a GBV_ILN_62 | ||
912 | |a GBV_ILN_63 | ||
912 | |a GBV_ILN_65 | ||
912 | |a GBV_ILN_69 | ||
912 | |a GBV_ILN_70 | ||
912 | |a GBV_ILN_73 | ||
912 | |a GBV_ILN_95 | ||
912 | |a GBV_ILN_105 | ||
912 | |a GBV_ILN_110 | ||
912 | |a GBV_ILN_151 | ||
912 | |a GBV_ILN_161 | ||
912 | |a GBV_ILN_170 | ||
912 | |a GBV_ILN_206 | ||
912 | |a GBV_ILN_213 | ||
912 | |a GBV_ILN_230 | ||
912 | |a GBV_ILN_285 | ||
912 | |a GBV_ILN_293 | ||
912 | |a GBV_ILN_370 | ||
912 | |a GBV_ILN_602 | ||
912 | |a GBV_ILN_2005 | ||
912 | |a GBV_ILN_2009 | ||
912 | |a GBV_ILN_2011 | ||
912 | |a GBV_ILN_2014 | ||
912 | |a GBV_ILN_2055 | ||
912 | |a GBV_ILN_2057 | ||
912 | |a GBV_ILN_2111 | ||
912 | |a GBV_ILN_2507 | ||
912 | |a GBV_ILN_4012 | ||
912 | |a GBV_ILN_4037 | ||
912 | |a GBV_ILN_4112 | ||
912 | |a GBV_ILN_4125 | ||
912 | |a GBV_ILN_4126 | ||
912 | |a GBV_ILN_4249 | ||
912 | |a GBV_ILN_4305 | ||
912 | |a GBV_ILN_4306 | ||
912 | |a GBV_ILN_4307 | ||
912 | |a GBV_ILN_4313 | ||
912 | |a GBV_ILN_4322 | ||
912 | |a GBV_ILN_4323 | ||
912 | |a GBV_ILN_4324 | ||
912 | |a GBV_ILN_4325 | ||
912 | |a GBV_ILN_4335 | ||
912 | |a GBV_ILN_4338 | ||
912 | |a GBV_ILN_4367 | ||
912 | |a GBV_ILN_4700 | ||
951 | |a AR | ||
952 | |d 23 |j 2023 |e 10, p 4976 |
author_variant |
d y l dyl h p h hph k h l khl p h w phw y t s yts y f w yfw y p w ypw c f l cfl |
---|---|
matchkey_str |
article:14248220:2023----::nacdpiarsosossnsbsbaee |
hierarchy_sort_str |
2023 |
callnumber-subject-code |
TP |
publishDate |
2023 |
allfields |
10.3390/s23104976 doi (DE-627)DOAJ094309736 (DE-599)DOAJ1041217007864fb9aaf94985de461f10 DE-627 ger DE-627 rakwb eng TP1-1185 Der-Yuh Lin verfasserin aut Enhanced Optical Response of SnS/SnS<sub<2</sub< Layered Heterostructure 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The SnS/SnS<sub<2</sub< heterostructure was fabricated by the chemical vapor deposition method. The crystal structure properties of SnS<sub<2</sub< and SnS were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and field emission scanning electron microscopy (FESEM). The frequency dependence photoconductivity explores its carrier kinetic decay process. The SnS/SnS<sub<2</sub< heterostructure shows that the ratio of short time constant decay process reaches 0.729 with a time constant of 4.3 × 10<sup<−4</sup< s. The power-dependent photoresponsivity investigates the mechanism of electron–hole pair recombination. The results indicate that the photoresponsivity of the SnS/SnS<sub<2</sub< heterostructure has been increased to 7.31 × 10<sup<−3</sup< A/W, representing a significant enhancement of approximately 7 times that of the individual films. The results show the optical response speed has been improved by using the SnS/SnS<sub<2</sub< heterostructure. These results indicate an application potential of the layered SnS/SnS<sub<2</sub< heterostructure for photodetection. This research provides valuable insights into the preparation of the heterostructure composed of SnS and SnS<sub<2</sub<, and presents an approach for designing high-performance photodetection devices. heterostructure photoresponsivity chemical vapor deposition Chemical technology Hung-Pin Hsu verfasserin aut Kuang-Hsin Liu verfasserin aut Po-Hung Wu verfasserin aut Yu-Tai Shih verfasserin aut Ya-Fen Wu verfasserin aut Yi-Ping Wang verfasserin aut Chia-Feng Lin verfasserin aut In Sensors MDPI AG, 2003 23(2023), 10, p 4976 (DE-627)331640910 (DE-600)2052857-7 14248220 nnns volume:23 year:2023 number:10, p 4976 https://doi.org/10.3390/s23104976 kostenfrei https://doaj.org/article/1041217007864fb9aaf94985de461f10 kostenfrei https://www.mdpi.com/1424-8220/23/10/4976 kostenfrei https://doaj.org/toc/1424-8220 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2111 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 23 2023 10, p 4976 |
spelling |
10.3390/s23104976 doi (DE-627)DOAJ094309736 (DE-599)DOAJ1041217007864fb9aaf94985de461f10 DE-627 ger DE-627 rakwb eng TP1-1185 Der-Yuh Lin verfasserin aut Enhanced Optical Response of SnS/SnS<sub<2</sub< Layered Heterostructure 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The SnS/SnS<sub<2</sub< heterostructure was fabricated by the chemical vapor deposition method. The crystal structure properties of SnS<sub<2</sub< and SnS were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and field emission scanning electron microscopy (FESEM). The frequency dependence photoconductivity explores its carrier kinetic decay process. The SnS/SnS<sub<2</sub< heterostructure shows that the ratio of short time constant decay process reaches 0.729 with a time constant of 4.3 × 10<sup<−4</sup< s. The power-dependent photoresponsivity investigates the mechanism of electron–hole pair recombination. The results indicate that the photoresponsivity of the SnS/SnS<sub<2</sub< heterostructure has been increased to 7.31 × 10<sup<−3</sup< A/W, representing a significant enhancement of approximately 7 times that of the individual films. The results show the optical response speed has been improved by using the SnS/SnS<sub<2</sub< heterostructure. These results indicate an application potential of the layered SnS/SnS<sub<2</sub< heterostructure for photodetection. This research provides valuable insights into the preparation of the heterostructure composed of SnS and SnS<sub<2</sub<, and presents an approach for designing high-performance photodetection devices. heterostructure photoresponsivity chemical vapor deposition Chemical technology Hung-Pin Hsu verfasserin aut Kuang-Hsin Liu verfasserin aut Po-Hung Wu verfasserin aut Yu-Tai Shih verfasserin aut Ya-Fen Wu verfasserin aut Yi-Ping Wang verfasserin aut Chia-Feng Lin verfasserin aut In Sensors MDPI AG, 2003 23(2023), 10, p 4976 (DE-627)331640910 (DE-600)2052857-7 14248220 nnns volume:23 year:2023 number:10, p 4976 https://doi.org/10.3390/s23104976 kostenfrei https://doaj.org/article/1041217007864fb9aaf94985de461f10 kostenfrei https://www.mdpi.com/1424-8220/23/10/4976 kostenfrei https://doaj.org/toc/1424-8220 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2111 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 23 2023 10, p 4976 |
allfields_unstemmed |
10.3390/s23104976 doi (DE-627)DOAJ094309736 (DE-599)DOAJ1041217007864fb9aaf94985de461f10 DE-627 ger DE-627 rakwb eng TP1-1185 Der-Yuh Lin verfasserin aut Enhanced Optical Response of SnS/SnS<sub<2</sub< Layered Heterostructure 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The SnS/SnS<sub<2</sub< heterostructure was fabricated by the chemical vapor deposition method. The crystal structure properties of SnS<sub<2</sub< and SnS were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and field emission scanning electron microscopy (FESEM). The frequency dependence photoconductivity explores its carrier kinetic decay process. The SnS/SnS<sub<2</sub< heterostructure shows that the ratio of short time constant decay process reaches 0.729 with a time constant of 4.3 × 10<sup<−4</sup< s. The power-dependent photoresponsivity investigates the mechanism of electron–hole pair recombination. The results indicate that the photoresponsivity of the SnS/SnS<sub<2</sub< heterostructure has been increased to 7.31 × 10<sup<−3</sup< A/W, representing a significant enhancement of approximately 7 times that of the individual films. The results show the optical response speed has been improved by using the SnS/SnS<sub<2</sub< heterostructure. These results indicate an application potential of the layered SnS/SnS<sub<2</sub< heterostructure for photodetection. This research provides valuable insights into the preparation of the heterostructure composed of SnS and SnS<sub<2</sub<, and presents an approach for designing high-performance photodetection devices. heterostructure photoresponsivity chemical vapor deposition Chemical technology Hung-Pin Hsu verfasserin aut Kuang-Hsin Liu verfasserin aut Po-Hung Wu verfasserin aut Yu-Tai Shih verfasserin aut Ya-Fen Wu verfasserin aut Yi-Ping Wang verfasserin aut Chia-Feng Lin verfasserin aut In Sensors MDPI AG, 2003 23(2023), 10, p 4976 (DE-627)331640910 (DE-600)2052857-7 14248220 nnns volume:23 year:2023 number:10, p 4976 https://doi.org/10.3390/s23104976 kostenfrei https://doaj.org/article/1041217007864fb9aaf94985de461f10 kostenfrei https://www.mdpi.com/1424-8220/23/10/4976 kostenfrei https://doaj.org/toc/1424-8220 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2111 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 23 2023 10, p 4976 |
allfieldsGer |
10.3390/s23104976 doi (DE-627)DOAJ094309736 (DE-599)DOAJ1041217007864fb9aaf94985de461f10 DE-627 ger DE-627 rakwb eng TP1-1185 Der-Yuh Lin verfasserin aut Enhanced Optical Response of SnS/SnS<sub<2</sub< Layered Heterostructure 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The SnS/SnS<sub<2</sub< heterostructure was fabricated by the chemical vapor deposition method. The crystal structure properties of SnS<sub<2</sub< and SnS were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and field emission scanning electron microscopy (FESEM). The frequency dependence photoconductivity explores its carrier kinetic decay process. The SnS/SnS<sub<2</sub< heterostructure shows that the ratio of short time constant decay process reaches 0.729 with a time constant of 4.3 × 10<sup<−4</sup< s. The power-dependent photoresponsivity investigates the mechanism of electron–hole pair recombination. The results indicate that the photoresponsivity of the SnS/SnS<sub<2</sub< heterostructure has been increased to 7.31 × 10<sup<−3</sup< A/W, representing a significant enhancement of approximately 7 times that of the individual films. The results show the optical response speed has been improved by using the SnS/SnS<sub<2</sub< heterostructure. These results indicate an application potential of the layered SnS/SnS<sub<2</sub< heterostructure for photodetection. This research provides valuable insights into the preparation of the heterostructure composed of SnS and SnS<sub<2</sub<, and presents an approach for designing high-performance photodetection devices. heterostructure photoresponsivity chemical vapor deposition Chemical technology Hung-Pin Hsu verfasserin aut Kuang-Hsin Liu verfasserin aut Po-Hung Wu verfasserin aut Yu-Tai Shih verfasserin aut Ya-Fen Wu verfasserin aut Yi-Ping Wang verfasserin aut Chia-Feng Lin verfasserin aut In Sensors MDPI AG, 2003 23(2023), 10, p 4976 (DE-627)331640910 (DE-600)2052857-7 14248220 nnns volume:23 year:2023 number:10, p 4976 https://doi.org/10.3390/s23104976 kostenfrei https://doaj.org/article/1041217007864fb9aaf94985de461f10 kostenfrei https://www.mdpi.com/1424-8220/23/10/4976 kostenfrei https://doaj.org/toc/1424-8220 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2111 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 23 2023 10, p 4976 |
allfieldsSound |
10.3390/s23104976 doi (DE-627)DOAJ094309736 (DE-599)DOAJ1041217007864fb9aaf94985de461f10 DE-627 ger DE-627 rakwb eng TP1-1185 Der-Yuh Lin verfasserin aut Enhanced Optical Response of SnS/SnS<sub<2</sub< Layered Heterostructure 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The SnS/SnS<sub<2</sub< heterostructure was fabricated by the chemical vapor deposition method. The crystal structure properties of SnS<sub<2</sub< and SnS were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and field emission scanning electron microscopy (FESEM). The frequency dependence photoconductivity explores its carrier kinetic decay process. The SnS/SnS<sub<2</sub< heterostructure shows that the ratio of short time constant decay process reaches 0.729 with a time constant of 4.3 × 10<sup<−4</sup< s. The power-dependent photoresponsivity investigates the mechanism of electron–hole pair recombination. The results indicate that the photoresponsivity of the SnS/SnS<sub<2</sub< heterostructure has been increased to 7.31 × 10<sup<−3</sup< A/W, representing a significant enhancement of approximately 7 times that of the individual films. The results show the optical response speed has been improved by using the SnS/SnS<sub<2</sub< heterostructure. These results indicate an application potential of the layered SnS/SnS<sub<2</sub< heterostructure for photodetection. This research provides valuable insights into the preparation of the heterostructure composed of SnS and SnS<sub<2</sub<, and presents an approach for designing high-performance photodetection devices. heterostructure photoresponsivity chemical vapor deposition Chemical technology Hung-Pin Hsu verfasserin aut Kuang-Hsin Liu verfasserin aut Po-Hung Wu verfasserin aut Yu-Tai Shih verfasserin aut Ya-Fen Wu verfasserin aut Yi-Ping Wang verfasserin aut Chia-Feng Lin verfasserin aut In Sensors MDPI AG, 2003 23(2023), 10, p 4976 (DE-627)331640910 (DE-600)2052857-7 14248220 nnns volume:23 year:2023 number:10, p 4976 https://doi.org/10.3390/s23104976 kostenfrei https://doaj.org/article/1041217007864fb9aaf94985de461f10 kostenfrei https://www.mdpi.com/1424-8220/23/10/4976 kostenfrei https://doaj.org/toc/1424-8220 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2111 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 23 2023 10, p 4976 |
language |
English |
source |
In Sensors 23(2023), 10, p 4976 volume:23 year:2023 number:10, p 4976 |
sourceStr |
In Sensors 23(2023), 10, p 4976 volume:23 year:2023 number:10, p 4976 |
format_phy_str_mv |
Article |
institution |
findex.gbv.de |
topic_facet |
heterostructure photoresponsivity chemical vapor deposition Chemical technology |
isfreeaccess_bool |
true |
container_title |
Sensors |
authorswithroles_txt_mv |
Der-Yuh Lin @@aut@@ Hung-Pin Hsu @@aut@@ Kuang-Hsin Liu @@aut@@ Po-Hung Wu @@aut@@ Yu-Tai Shih @@aut@@ Ya-Fen Wu @@aut@@ Yi-Ping Wang @@aut@@ Chia-Feng Lin @@aut@@ |
publishDateDaySort_date |
2023-01-01T00:00:00Z |
hierarchy_top_id |
331640910 |
id |
DOAJ094309736 |
language_de |
englisch |
fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000naa a22002652 4500</leader><controlfield tag="001">DOAJ094309736</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20240413032943.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">240413s2023 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.3390/s23104976</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ094309736</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJ1041217007864fb9aaf94985de461f10</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TP1-1185</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Der-Yuh Lin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Enhanced Optical Response of SnS/SnS<sub<2</sub< Layered Heterostructure</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2023</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The SnS/SnS<sub<2</sub< heterostructure was fabricated by the chemical vapor deposition method. The crystal structure properties of SnS<sub<2</sub< and SnS were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and field emission scanning electron microscopy (FESEM). The frequency dependence photoconductivity explores its carrier kinetic decay process. The SnS/SnS<sub<2</sub< heterostructure shows that the ratio of short time constant decay process reaches 0.729 with a time constant of 4.3 × 10<sup<−4</sup< s. The power-dependent photoresponsivity investigates the mechanism of electron–hole pair recombination. The results indicate that the photoresponsivity of the SnS/SnS<sub<2</sub< heterostructure has been increased to 7.31 × 10<sup<−3</sup< A/W, representing a significant enhancement of approximately 7 times that of the individual films. The results show the optical response speed has been improved by using the SnS/SnS<sub<2</sub< heterostructure. These results indicate an application potential of the layered SnS/SnS<sub<2</sub< heterostructure for photodetection. This research provides valuable insights into the preparation of the heterostructure composed of SnS and SnS<sub<2</sub<, and presents an approach for designing high-performance photodetection devices.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">heterostructure</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">photoresponsivity</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">chemical vapor deposition</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Chemical technology</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Hung-Pin Hsu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Kuang-Hsin Liu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Po-Hung Wu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yu-Tai Shih</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Ya-Fen Wu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yi-Ping Wang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Chia-Feng Lin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Sensors</subfield><subfield code="d">MDPI AG, 2003</subfield><subfield code="g">23(2023), 10, p 4976</subfield><subfield code="w">(DE-627)331640910</subfield><subfield code="w">(DE-600)2052857-7</subfield><subfield code="x">14248220</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:23</subfield><subfield code="g">year:2023</subfield><subfield code="g">number:10, p 4976</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.3390/s23104976</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/1041217007864fb9aaf94985de461f10</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.mdpi.com/1424-8220/23/10/4976</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/1424-8220</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_206</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2009</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2057</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">23</subfield><subfield code="j">2023</subfield><subfield code="e">10, p 4976</subfield></datafield></record></collection>
|
callnumber-first |
T - Technology |
author |
Der-Yuh Lin |
spellingShingle |
Der-Yuh Lin misc TP1-1185 misc heterostructure misc photoresponsivity misc chemical vapor deposition misc Chemical technology Enhanced Optical Response of SnS/SnS<sub<2</sub< Layered Heterostructure |
authorStr |
Der-Yuh Lin |
ppnlink_with_tag_str_mv |
@@773@@(DE-627)331640910 |
format |
electronic Article |
delete_txt_mv |
keep |
author_role |
aut aut aut aut aut aut aut aut |
collection |
DOAJ |
remote_str |
true |
callnumber-label |
TP1-1185 |
illustrated |
Not Illustrated |
issn |
14248220 |
topic_title |
TP1-1185 Enhanced Optical Response of SnS/SnS<sub<2</sub< Layered Heterostructure heterostructure photoresponsivity chemical vapor deposition |
topic |
misc TP1-1185 misc heterostructure misc photoresponsivity misc chemical vapor deposition misc Chemical technology |
topic_unstemmed |
misc TP1-1185 misc heterostructure misc photoresponsivity misc chemical vapor deposition misc Chemical technology |
topic_browse |
misc TP1-1185 misc heterostructure misc photoresponsivity misc chemical vapor deposition misc Chemical technology |
format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
format_main_str_mv |
Text Zeitschrift/Artikel |
carriertype_str_mv |
cr |
hierarchy_parent_title |
Sensors |
hierarchy_parent_id |
331640910 |
hierarchy_top_title |
Sensors |
isfreeaccess_txt |
true |
familylinks_str_mv |
(DE-627)331640910 (DE-600)2052857-7 |
title |
Enhanced Optical Response of SnS/SnS<sub<2</sub< Layered Heterostructure |
ctrlnum |
(DE-627)DOAJ094309736 (DE-599)DOAJ1041217007864fb9aaf94985de461f10 |
title_full |
Enhanced Optical Response of SnS/SnS<sub<2</sub< Layered Heterostructure |
author_sort |
Der-Yuh Lin |
journal |
Sensors |
journalStr |
Sensors |
callnumber-first-code |
T |
lang_code |
eng |
isOA_bool |
true |
recordtype |
marc |
publishDateSort |
2023 |
contenttype_str_mv |
txt |
author_browse |
Der-Yuh Lin Hung-Pin Hsu Kuang-Hsin Liu Po-Hung Wu Yu-Tai Shih Ya-Fen Wu Yi-Ping Wang Chia-Feng Lin |
container_volume |
23 |
class |
TP1-1185 |
format_se |
Elektronische Aufsätze |
author-letter |
Der-Yuh Lin |
doi_str_mv |
10.3390/s23104976 |
author2-role |
verfasserin |
title_sort |
enhanced optical response of sns/sns<sub<2</sub< layered heterostructure |
callnumber |
TP1-1185 |
title_auth |
Enhanced Optical Response of SnS/SnS<sub<2</sub< Layered Heterostructure |
abstract |
The SnS/SnS<sub<2</sub< heterostructure was fabricated by the chemical vapor deposition method. The crystal structure properties of SnS<sub<2</sub< and SnS were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and field emission scanning electron microscopy (FESEM). The frequency dependence photoconductivity explores its carrier kinetic decay process. The SnS/SnS<sub<2</sub< heterostructure shows that the ratio of short time constant decay process reaches 0.729 with a time constant of 4.3 × 10<sup<−4</sup< s. The power-dependent photoresponsivity investigates the mechanism of electron–hole pair recombination. The results indicate that the photoresponsivity of the SnS/SnS<sub<2</sub< heterostructure has been increased to 7.31 × 10<sup<−3</sup< A/W, representing a significant enhancement of approximately 7 times that of the individual films. The results show the optical response speed has been improved by using the SnS/SnS<sub<2</sub< heterostructure. These results indicate an application potential of the layered SnS/SnS<sub<2</sub< heterostructure for photodetection. This research provides valuable insights into the preparation of the heterostructure composed of SnS and SnS<sub<2</sub<, and presents an approach for designing high-performance photodetection devices. |
abstractGer |
The SnS/SnS<sub<2</sub< heterostructure was fabricated by the chemical vapor deposition method. The crystal structure properties of SnS<sub<2</sub< and SnS were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and field emission scanning electron microscopy (FESEM). The frequency dependence photoconductivity explores its carrier kinetic decay process. The SnS/SnS<sub<2</sub< heterostructure shows that the ratio of short time constant decay process reaches 0.729 with a time constant of 4.3 × 10<sup<−4</sup< s. The power-dependent photoresponsivity investigates the mechanism of electron–hole pair recombination. The results indicate that the photoresponsivity of the SnS/SnS<sub<2</sub< heterostructure has been increased to 7.31 × 10<sup<−3</sup< A/W, representing a significant enhancement of approximately 7 times that of the individual films. The results show the optical response speed has been improved by using the SnS/SnS<sub<2</sub< heterostructure. These results indicate an application potential of the layered SnS/SnS<sub<2</sub< heterostructure for photodetection. This research provides valuable insights into the preparation of the heterostructure composed of SnS and SnS<sub<2</sub<, and presents an approach for designing high-performance photodetection devices. |
abstract_unstemmed |
The SnS/SnS<sub<2</sub< heterostructure was fabricated by the chemical vapor deposition method. The crystal structure properties of SnS<sub<2</sub< and SnS were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and field emission scanning electron microscopy (FESEM). The frequency dependence photoconductivity explores its carrier kinetic decay process. The SnS/SnS<sub<2</sub< heterostructure shows that the ratio of short time constant decay process reaches 0.729 with a time constant of 4.3 × 10<sup<−4</sup< s. The power-dependent photoresponsivity investigates the mechanism of electron–hole pair recombination. The results indicate that the photoresponsivity of the SnS/SnS<sub<2</sub< heterostructure has been increased to 7.31 × 10<sup<−3</sup< A/W, representing a significant enhancement of approximately 7 times that of the individual films. The results show the optical response speed has been improved by using the SnS/SnS<sub<2</sub< heterostructure. These results indicate an application potential of the layered SnS/SnS<sub<2</sub< heterostructure for photodetection. This research provides valuable insights into the preparation of the heterostructure composed of SnS and SnS<sub<2</sub<, and presents an approach for designing high-performance photodetection devices. |
collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2111 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 |
container_issue |
10, p 4976 |
title_short |
Enhanced Optical Response of SnS/SnS<sub<2</sub< Layered Heterostructure |
url |
https://doi.org/10.3390/s23104976 https://doaj.org/article/1041217007864fb9aaf94985de461f10 https://www.mdpi.com/1424-8220/23/10/4976 https://doaj.org/toc/1424-8220 |
remote_bool |
true |
author2 |
Hung-Pin Hsu Kuang-Hsin Liu Po-Hung Wu Yu-Tai Shih Ya-Fen Wu Yi-Ping Wang Chia-Feng Lin |
author2Str |
Hung-Pin Hsu Kuang-Hsin Liu Po-Hung Wu Yu-Tai Shih Ya-Fen Wu Yi-Ping Wang Chia-Feng Lin |
ppnlink |
331640910 |
callnumber-subject |
TP - Chemical Technology |
mediatype_str_mv |
c |
isOA_txt |
true |
hochschulschrift_bool |
false |
doi_str |
10.3390/s23104976 |
callnumber-a |
TP1-1185 |
up_date |
2024-07-03T22:27:17.062Z |
_version_ |
1803598573931069440 |
fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000naa a22002652 4500</leader><controlfield tag="001">DOAJ094309736</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20240413032943.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">240413s2023 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.3390/s23104976</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ094309736</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJ1041217007864fb9aaf94985de461f10</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TP1-1185</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Der-Yuh Lin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Enhanced Optical Response of SnS/SnS<sub<2</sub< Layered Heterostructure</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2023</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The SnS/SnS<sub<2</sub< heterostructure was fabricated by the chemical vapor deposition method. The crystal structure properties of SnS<sub<2</sub< and SnS were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and field emission scanning electron microscopy (FESEM). The frequency dependence photoconductivity explores its carrier kinetic decay process. The SnS/SnS<sub<2</sub< heterostructure shows that the ratio of short time constant decay process reaches 0.729 with a time constant of 4.3 × 10<sup<−4</sup< s. The power-dependent photoresponsivity investigates the mechanism of electron–hole pair recombination. The results indicate that the photoresponsivity of the SnS/SnS<sub<2</sub< heterostructure has been increased to 7.31 × 10<sup<−3</sup< A/W, representing a significant enhancement of approximately 7 times that of the individual films. The results show the optical response speed has been improved by using the SnS/SnS<sub<2</sub< heterostructure. These results indicate an application potential of the layered SnS/SnS<sub<2</sub< heterostructure for photodetection. This research provides valuable insights into the preparation of the heterostructure composed of SnS and SnS<sub<2</sub<, and presents an approach for designing high-performance photodetection devices.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">heterostructure</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">photoresponsivity</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">chemical vapor deposition</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Chemical technology</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Hung-Pin Hsu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Kuang-Hsin Liu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Po-Hung Wu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yu-Tai Shih</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Ya-Fen Wu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yi-Ping Wang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Chia-Feng Lin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">In</subfield><subfield code="t">Sensors</subfield><subfield code="d">MDPI AG, 2003</subfield><subfield code="g">23(2023), 10, p 4976</subfield><subfield code="w">(DE-627)331640910</subfield><subfield code="w">(DE-600)2052857-7</subfield><subfield code="x">14248220</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:23</subfield><subfield code="g">year:2023</subfield><subfield code="g">number:10, p 4976</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.3390/s23104976</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doaj.org/article/1041217007864fb9aaf94985de461f10</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://www.mdpi.com/1424-8220/23/10/4976</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://doaj.org/toc/1424-8220</subfield><subfield code="y">Journal toc</subfield><subfield code="z">kostenfrei</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_DOAJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_206</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2009</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2057</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4367</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">23</subfield><subfield code="j">2023</subfield><subfield code="e">10, p 4976</subfield></datafield></record></collection>
|
score |
7.4003067 |