Enhanced Optical Response of SnS/SnS<sub<2</sub< Layered Heterostructure

The SnS/SnS<sub<2</sub< heterostructure was fabricated by the chemical vapor deposition method. The crystal structure properties of SnS<sub<2</sub< and SnS were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and field emission scanning electron microsco...
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Autor*in:	Der-Yuh Lin [verfasserIn] Hung-Pin Hsu [verfasserIn] Kuang-Hsin Liu [verfasserIn] Po-Hung Wu [verfasserIn] Yu-Tai Shih [verfasserIn] Ya-Fen Wu [verfasserIn] Yi-Ping Wang [verfasserIn] Chia-Feng Lin [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	heterostructure photoresponsivity chemical vapor deposition

Übergeordnetes Werk:	In: Sensors - MDPI AG, 2003, 23(2023), 10, p 4976
Übergeordnetes Werk:	volume:23 ; year:2023 ; number:10, p 4976

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/s23104976

Katalog-ID:	DOAJ094309736

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spelling	10.3390/s23104976 doi (DE-627)DOAJ094309736 (DE-599)DOAJ1041217007864fb9aaf94985de461f10 DE-627 ger DE-627 rakwb eng TP1-1185 Der-Yuh Lin verfasserin aut Enhanced Optical Response of SnS/SnS<sub<2</sub< Layered Heterostructure 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The SnS/SnS<sub<2</sub< heterostructure was fabricated by the chemical vapor deposition method. The crystal structure properties of SnS<sub<2</sub< and SnS were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and field emission scanning electron microscopy (FESEM). The frequency dependence photoconductivity explores its carrier kinetic decay process. The SnS/SnS<sub<2</sub< heterostructure shows that the ratio of short time constant decay process reaches 0.729 with a time constant of 4.3 × 10<sup<−4</sup< s. The power-dependent photoresponsivity investigates the mechanism of electron–hole pair recombination. The results indicate that the photoresponsivity of the SnS/SnS<sub<2</sub< heterostructure has been increased to 7.31 × 10<sup<−3</sup< A/W, representing a significant enhancement of approximately 7 times that of the individual films. The results show the optical response speed has been improved by using the SnS/SnS<sub<2</sub< heterostructure. These results indicate an application potential of the layered SnS/SnS<sub<2</sub< heterostructure for photodetection. This research provides valuable insights into the preparation of the heterostructure composed of SnS and SnS<sub<2</sub<, and presents an approach for designing high-performance photodetection devices. heterostructure photoresponsivity chemical vapor deposition Chemical technology Hung-Pin Hsu verfasserin aut Kuang-Hsin Liu verfasserin aut Po-Hung Wu verfasserin aut Yu-Tai Shih verfasserin aut Ya-Fen Wu verfasserin aut Yi-Ping Wang verfasserin aut Chia-Feng Lin verfasserin aut In Sensors MDPI AG, 2003 23(2023), 10, p 4976 (DE-627)331640910 (DE-600)2052857-7 14248220 nnns volume:23 year:2023 number:10, p 4976 https://doi.org/10.3390/s23104976 kostenfrei https://doaj.org/article/1041217007864fb9aaf94985de461f10 kostenfrei https://www.mdpi.com/1424-8220/23/10/4976 kostenfrei https://doaj.org/toc/1424-8220 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2111 GBV_ILN_2507 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 23 2023 10, p 4976
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callnumber-first	T - Technology
author	Der-Yuh Lin
spellingShingle	Der-Yuh Lin misc TP1-1185 misc heterostructure misc photoresponsivity misc chemical vapor deposition misc Chemical technology Enhanced Optical Response of SnS/SnS<sub<2</sub< Layered Heterostructure
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topic_title	TP1-1185 Enhanced Optical Response of SnS/SnS<sub<2</sub< Layered Heterostructure heterostructure photoresponsivity chemical vapor deposition
topic	misc TP1-1185 misc heterostructure misc photoresponsivity misc chemical vapor deposition misc Chemical technology
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title	Enhanced Optical Response of SnS/SnS<sub<2</sub< Layered Heterostructure
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title_full	Enhanced Optical Response of SnS/SnS<sub<2</sub< Layered Heterostructure
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title_sort	enhanced optical response of sns/sns<sub<2</sub< layered heterostructure
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title_auth	Enhanced Optical Response of SnS/SnS<sub<2</sub< Layered Heterostructure
abstract	The SnS/SnS<sub<2</sub< heterostructure was fabricated by the chemical vapor deposition method. The crystal structure properties of SnS<sub<2</sub< and SnS were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and field emission scanning electron microscopy (FESEM). The frequency dependence photoconductivity explores its carrier kinetic decay process. The SnS/SnS<sub<2</sub< heterostructure shows that the ratio of short time constant decay process reaches 0.729 with a time constant of 4.3 × 10<sup<−4</sup< s. The power-dependent photoresponsivity investigates the mechanism of electron–hole pair recombination. The results indicate that the photoresponsivity of the SnS/SnS<sub<2</sub< heterostructure has been increased to 7.31 × 10<sup<−3</sup< A/W, representing a significant enhancement of approximately 7 times that of the individual films. The results show the optical response speed has been improved by using the SnS/SnS<sub<2</sub< heterostructure. These results indicate an application potential of the layered SnS/SnS<sub<2</sub< heterostructure for photodetection. This research provides valuable insights into the preparation of the heterostructure composed of SnS and SnS<sub<2</sub<, and presents an approach for designing high-performance photodetection devices.
abstractGer	The SnS/SnS<sub<2</sub< heterostructure was fabricated by the chemical vapor deposition method. The crystal structure properties of SnS<sub<2</sub< and SnS were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and field emission scanning electron microscopy (FESEM). The frequency dependence photoconductivity explores its carrier kinetic decay process. The SnS/SnS<sub<2</sub< heterostructure shows that the ratio of short time constant decay process reaches 0.729 with a time constant of 4.3 × 10<sup<−4</sup< s. The power-dependent photoresponsivity investigates the mechanism of electron–hole pair recombination. The results indicate that the photoresponsivity of the SnS/SnS<sub<2</sub< heterostructure has been increased to 7.31 × 10<sup<−3</sup< A/W, representing a significant enhancement of approximately 7 times that of the individual films. The results show the optical response speed has been improved by using the SnS/SnS<sub<2</sub< heterostructure. These results indicate an application potential of the layered SnS/SnS<sub<2</sub< heterostructure for photodetection. This research provides valuable insights into the preparation of the heterostructure composed of SnS and SnS<sub<2</sub<, and presents an approach for designing high-performance photodetection devices.
abstract_unstemmed	The SnS/SnS<sub<2</sub< heterostructure was fabricated by the chemical vapor deposition method. The crystal structure properties of SnS<sub<2</sub< and SnS were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and field emission scanning electron microscopy (FESEM). The frequency dependence photoconductivity explores its carrier kinetic decay process. The SnS/SnS<sub<2</sub< heterostructure shows that the ratio of short time constant decay process reaches 0.729 with a time constant of 4.3 × 10<sup<−4</sup< s. The power-dependent photoresponsivity investigates the mechanism of electron–hole pair recombination. The results indicate that the photoresponsivity of the SnS/SnS<sub<2</sub< heterostructure has been increased to 7.31 × 10<sup<−3</sup< A/W, representing a significant enhancement of approximately 7 times that of the individual films. The results show the optical response speed has been improved by using the SnS/SnS<sub<2</sub< heterostructure. These results indicate an application potential of the layered SnS/SnS<sub<2</sub< heterostructure for photodetection. This research provides valuable insights into the preparation of the heterostructure composed of SnS and SnS<sub<2</sub<, and presents an approach for designing high-performance photodetection devices.
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title_short	Enhanced Optical Response of SnS/SnS<sub<2</sub< Layered Heterostructure
url	https://doi.org/10.3390/s23104976 https://doaj.org/article/1041217007864fb9aaf94985de461f10 https://www.mdpi.com/1424-8220/23/10/4976 https://doaj.org/toc/1424-8220
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up_date	2024-07-03T22:27:17.062Z
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These results indicate an application potential of the layered SnS/SnS<sub<2</sub< heterostructure for photodetection. 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Enhanced Optical Response of SnS/SnS<sub<2</sub< Layered Heterostructure

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