Enhancing Emission via Radiative Lifetime Manipulation in Ultrathin InGaN/GaN Quantum Wells: The Effects of Simultaneous Electric and Magnetic Fields, Thickness, and Impurity
Ultra-thin quantum wells, with their unique charge confinement effects, are essential in enhancing the electronic and optical properties crucial for optoelectronic device optimization. This study focuses on theoretical investigations into radiative recombination lifetimes in nanostructures, specific...
Ausführliche Beschreibung
Autor*in: |
Redouane En-nadir [verfasserIn] Mohamed A. Basyooni-M. Kabatas [verfasserIn] Mohammed Tihtih [verfasserIn] Walid Belaid [verfasserIn] Ilyass Ez-zejjari [verfasserIn] El Ghmari Majda [verfasserIn] Haddou El Ghazi [verfasserIn] Ahmed Sali [verfasserIn] Izeddine Zorkani [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch |
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2023 |
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In: Nanomaterials - MDPI AG, 2012, 13(2023), 21, p 2817 |
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Übergeordnetes Werk: |
volume:13 ; year:2023 ; number:21, p 2817 |
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DOI / URN: |
10.3390/nano13212817 |
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Katalog-ID: |
DOAJ095448802 |
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10.3390/nano13212817 doi (DE-627)DOAJ095448802 (DE-599)DOAJ41be0a69b9e34d17a70c106a1e04d8f6 DE-627 ger DE-627 rakwb eng QD1-999 Redouane En-nadir verfasserin aut Enhancing Emission via Radiative Lifetime Manipulation in Ultrathin InGaN/GaN Quantum Wells: The Effects of Simultaneous Electric and Magnetic Fields, Thickness, and Impurity 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Ultra-thin quantum wells, with their unique charge confinement effects, are essential in enhancing the electronic and optical properties crucial for optoelectronic device optimization. This study focuses on theoretical investigations into radiative recombination lifetimes in nanostructures, specifically addressing both intra-subband (ISB: e-e) and band-to-band (BTB: e-hh) transitions within InGaN/GaN quantum wells (QWs). Our research unveils that the radiative lifetimes in ISB and BTB transitions are significantly influenced by external excitation, particularly in thin-layered QWs with strong confinement effects. In the case of ISB transitions (e-e), the recombination lifetimes span a range from 0.1 to 4.7 ns, indicating relatively longer durations. On the other hand, BTB transitions (e-hh) exhibit quicker lifetimes, falling within the range of 0.01 to 1 ns, indicating comparatively faster recombination processes. However, it is crucial to note that the thickness of the quantum well layer exerts a substantial influence on the radiative lifetime, whereas the presence of impurities has a comparatively minor impact on these recombination lifetimes. This research advances our understanding of transition lifetimes in quantum well systems, promising enhancements across optoelectronic applications, including laser diodes and advanced technologies in detection, sensing, and telecommunications. quantum wells radiative lifetime electromagnetic excitation impurity thickness Chemistry Mohamed A. Basyooni-M. Kabatas verfasserin aut Mohammed Tihtih verfasserin aut Walid Belaid verfasserin aut Ilyass Ez-zejjari verfasserin aut El Ghmari Majda verfasserin aut Haddou El Ghazi verfasserin aut Ahmed Sali verfasserin aut Izeddine Zorkani verfasserin aut In Nanomaterials MDPI AG, 2012 13(2023), 21, p 2817 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:13 year:2023 number:21, p 2817 https://doi.org/10.3390/nano13212817 kostenfrei https://doaj.org/article/41be0a69b9e34d17a70c106a1e04d8f6 kostenfrei https://www.mdpi.com/2079-4991/13/21/2817 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2023 21, p 2817 |
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10.3390/nano13212817 doi (DE-627)DOAJ095448802 (DE-599)DOAJ41be0a69b9e34d17a70c106a1e04d8f6 DE-627 ger DE-627 rakwb eng QD1-999 Redouane En-nadir verfasserin aut Enhancing Emission via Radiative Lifetime Manipulation in Ultrathin InGaN/GaN Quantum Wells: The Effects of Simultaneous Electric and Magnetic Fields, Thickness, and Impurity 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Ultra-thin quantum wells, with their unique charge confinement effects, are essential in enhancing the electronic and optical properties crucial for optoelectronic device optimization. This study focuses on theoretical investigations into radiative recombination lifetimes in nanostructures, specifically addressing both intra-subband (ISB: e-e) and band-to-band (BTB: e-hh) transitions within InGaN/GaN quantum wells (QWs). Our research unveils that the radiative lifetimes in ISB and BTB transitions are significantly influenced by external excitation, particularly in thin-layered QWs with strong confinement effects. In the case of ISB transitions (e-e), the recombination lifetimes span a range from 0.1 to 4.7 ns, indicating relatively longer durations. On the other hand, BTB transitions (e-hh) exhibit quicker lifetimes, falling within the range of 0.01 to 1 ns, indicating comparatively faster recombination processes. However, it is crucial to note that the thickness of the quantum well layer exerts a substantial influence on the radiative lifetime, whereas the presence of impurities has a comparatively minor impact on these recombination lifetimes. This research advances our understanding of transition lifetimes in quantum well systems, promising enhancements across optoelectronic applications, including laser diodes and advanced technologies in detection, sensing, and telecommunications. quantum wells radiative lifetime electromagnetic excitation impurity thickness Chemistry Mohamed A. Basyooni-M. Kabatas verfasserin aut Mohammed Tihtih verfasserin aut Walid Belaid verfasserin aut Ilyass Ez-zejjari verfasserin aut El Ghmari Majda verfasserin aut Haddou El Ghazi verfasserin aut Ahmed Sali verfasserin aut Izeddine Zorkani verfasserin aut In Nanomaterials MDPI AG, 2012 13(2023), 21, p 2817 (DE-627)718627199 (DE-600)2662255-5 20794991 nnns volume:13 year:2023 number:21, p 2817 https://doi.org/10.3390/nano13212817 kostenfrei https://doaj.org/article/41be0a69b9e34d17a70c106a1e04d8f6 kostenfrei https://www.mdpi.com/2079-4991/13/21/2817 kostenfrei https://doaj.org/toc/2079-4991 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2108 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 13 2023 21, p 2817 |
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Ultra-thin quantum wells, with their unique charge confinement effects, are essential in enhancing the electronic and optical properties crucial for optoelectronic device optimization. This study focuses on theoretical investigations into radiative recombination lifetimes in nanostructures, specifically addressing both intra-subband (ISB: e-e) and band-to-band (BTB: e-hh) transitions within InGaN/GaN quantum wells (QWs). Our research unveils that the radiative lifetimes in ISB and BTB transitions are significantly influenced by external excitation, particularly in thin-layered QWs with strong confinement effects. In the case of ISB transitions (e-e), the recombination lifetimes span a range from 0.1 to 4.7 ns, indicating relatively longer durations. On the other hand, BTB transitions (e-hh) exhibit quicker lifetimes, falling within the range of 0.01 to 1 ns, indicating comparatively faster recombination processes. However, it is crucial to note that the thickness of the quantum well layer exerts a substantial influence on the radiative lifetime, whereas the presence of impurities has a comparatively minor impact on these recombination lifetimes. This research advances our understanding of transition lifetimes in quantum well systems, promising enhancements across optoelectronic applications, including laser diodes and advanced technologies in detection, sensing, and telecommunications. |
abstractGer |
Ultra-thin quantum wells, with their unique charge confinement effects, are essential in enhancing the electronic and optical properties crucial for optoelectronic device optimization. This study focuses on theoretical investigations into radiative recombination lifetimes in nanostructures, specifically addressing both intra-subband (ISB: e-e) and band-to-band (BTB: e-hh) transitions within InGaN/GaN quantum wells (QWs). Our research unveils that the radiative lifetimes in ISB and BTB transitions are significantly influenced by external excitation, particularly in thin-layered QWs with strong confinement effects. In the case of ISB transitions (e-e), the recombination lifetimes span a range from 0.1 to 4.7 ns, indicating relatively longer durations. On the other hand, BTB transitions (e-hh) exhibit quicker lifetimes, falling within the range of 0.01 to 1 ns, indicating comparatively faster recombination processes. However, it is crucial to note that the thickness of the quantum well layer exerts a substantial influence on the radiative lifetime, whereas the presence of impurities has a comparatively minor impact on these recombination lifetimes. This research advances our understanding of transition lifetimes in quantum well systems, promising enhancements across optoelectronic applications, including laser diodes and advanced technologies in detection, sensing, and telecommunications. |
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Ultra-thin quantum wells, with their unique charge confinement effects, are essential in enhancing the electronic and optical properties crucial for optoelectronic device optimization. This study focuses on theoretical investigations into radiative recombination lifetimes in nanostructures, specifically addressing both intra-subband (ISB: e-e) and band-to-band (BTB: e-hh) transitions within InGaN/GaN quantum wells (QWs). Our research unveils that the radiative lifetimes in ISB and BTB transitions are significantly influenced by external excitation, particularly in thin-layered QWs with strong confinement effects. In the case of ISB transitions (e-e), the recombination lifetimes span a range from 0.1 to 4.7 ns, indicating relatively longer durations. On the other hand, BTB transitions (e-hh) exhibit quicker lifetimes, falling within the range of 0.01 to 1 ns, indicating comparatively faster recombination processes. However, it is crucial to note that the thickness of the quantum well layer exerts a substantial influence on the radiative lifetime, whereas the presence of impurities has a comparatively minor impact on these recombination lifetimes. This research advances our understanding of transition lifetimes in quantum well systems, promising enhancements across optoelectronic applications, including laser diodes and advanced technologies in detection, sensing, and telecommunications. |
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This study focuses on theoretical investigations into radiative recombination lifetimes in nanostructures, specifically addressing both intra-subband (ISB: e-e) and band-to-band (BTB: e-hh) transitions within InGaN/GaN quantum wells (QWs). Our research unveils that the radiative lifetimes in ISB and BTB transitions are significantly influenced by external excitation, particularly in thin-layered QWs with strong confinement effects. In the case of ISB transitions (e-e), the recombination lifetimes span a range from 0.1 to 4.7 ns, indicating relatively longer durations. On the other hand, BTB transitions (e-hh) exhibit quicker lifetimes, falling within the range of 0.01 to 1 ns, indicating comparatively faster recombination processes. However, it is crucial to note that the thickness of the quantum well layer exerts a substantial influence on the radiative lifetime, whereas the presence of impurities has a comparatively minor impact on these recombination lifetimes. 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