High-Energy Radiation Effects on Silicon NPN Bipolar Transistor Electrical Performance: A Study with 1 MeV Proton Irradiation

This study investigates the degradation of the silicon NPN transistor’s emitter-base junction, specifically the 2N2219A model, under both forward and reverse polarization. We examine the current–voltage characteristics under the influence of 1 MeV proton irradiation at various fluencies, which are &...
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Autor*in:	Haddou EL Ghazi [verfasserIn] Redouane En-nadir [verfasserIn] Anouar Jorio [verfasserIn] Mohamed A. Basyooni-M. Kabatas [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	silicon transistors NPN-BJTs emitter-base proton irradiation electric performance

Übergeordnetes Werk:	In: Materials - MDPI AG, 2009, 16(2023), 21, p 6977
Übergeordnetes Werk:	volume:16 ; year:2023 ; number:21, p 6977

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/ma16216977

Katalog-ID:	DOAJ095453474

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520			\|a This study investigates the degradation of the silicon NPN transistor’s emitter-base junction, specifically the 2N2219A model, under both forward and reverse polarization. We examine the current–voltage characteristics under the influence of 1 MeV proton irradiation at various fluencies, which are <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mn<5.3</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<8</mn<</mrow<</msup<<mo<,</mo<<mn<5.3</mn<<msup<<mrow<<mo<×</mo<<mn<10</mn<</mrow<<mrow<<mn<10</mn<</mrow<</msup<<mo<,</mo<<mn<5</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<11</mn<</mrow<</msup<<mo<,</mo<<mn<5</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<12</mn<</mrow<</msup<</mrow<</semantics<</math<</inline-formula<, and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mn<5</mn<<msup<<mrow<<mo<×</mo<<mn<10</mn<</mrow<<mrow<<mn<13</mn<</mrow<</msup<</mrow<</semantics<</math<</inline-formula< protons/cm², all conducted at 307 K. The experimental findings elucidate a pronounced dependency of diode parameters, including the reverse saturation current, series resistance, and the non-idealist factor, on the incident proton flow. This observation underscores that proton-induced degradation is primarily driven by displacement damage, while recorded degradation is predominantly attributed to the generation of defects and interfacial traps within the transistor resulting from exposure to high-energy radiation. Our findings indicate that the effects of irradiation align more closely with the compensation phenomenon in doping rather than its reinforcement.
650		4	\|a silicon transistors
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allfields	10.3390/ma16216977 doi (DE-627)DOAJ095453474 (DE-599)DOAJb1658bb1f6b84a3596b200a106cff89e DE-627 ger DE-627 rakwb eng TK1-9971 TA1-2040 QH201-278.5 QC120-168.85 Haddou EL Ghazi verfasserin aut High-Energy Radiation Effects on Silicon NPN Bipolar Transistor Electrical Performance: A Study with 1 MeV Proton Irradiation 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This study investigates the degradation of the silicon NPN transistor’s emitter-base junction, specifically the 2N2219A model, under both forward and reverse polarization. We examine the current–voltage characteristics under the influence of 1 MeV proton irradiation at various fluencies, which are <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mn<5.3</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<8</mn<</mrow<</msup<<mo<,</mo<<mn<5.3</mn<<msup<<mrow<<mo<×</mo<<mn<10</mn<</mrow<<mrow<<mn<10</mn<</mrow<</msup<<mo<,</mo<<mn<5</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<11</mn<</mrow<</msup<<mo<,</mo<<mn<5</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<12</mn<</mrow<</msup<</mrow<</semantics<</math<</inline-formula<, and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mn<5</mn<<msup<<mrow<<mo<×</mo<<mn<10</mn<</mrow<<mrow<<mn<13</mn<</mrow<</msup<</mrow<</semantics<</math<</inline-formula< protons/cm², all conducted at 307 K. The experimental findings elucidate a pronounced dependency of diode parameters, including the reverse saturation current, series resistance, and the non-idealist factor, on the incident proton flow. This observation underscores that proton-induced degradation is primarily driven by displacement damage, while recorded degradation is predominantly attributed to the generation of defects and interfacial traps within the transistor resulting from exposure to high-energy radiation. Our findings indicate that the effects of irradiation align more closely with the compensation phenomenon in doping rather than its reinforcement. silicon transistors NPN-BJTs emitter-base proton irradiation electric performance Technology T Electrical engineering. Electronics. Nuclear engineering Engineering (General). Civil engineering (General) Microscopy Descriptive and experimental mechanics Redouane En-nadir verfasserin aut Anouar Jorio verfasserin aut Mohamed A. Basyooni-M. Kabatas verfasserin aut In Materials MDPI AG, 2009 16(2023), 21, p 6977 (DE-627)595712649 (DE-600)2487261-1 19961944 nnns volume:16 year:2023 number:21, p 6977 https://doi.org/10.3390/ma16216977 kostenfrei https://doaj.org/article/b1658bb1f6b84a3596b200a106cff89e kostenfrei https://www.mdpi.com/1996-1944/16/21/6977 kostenfrei https://doaj.org/toc/1996-1944 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 16 2023 21, p 6977
spelling	10.3390/ma16216977 doi (DE-627)DOAJ095453474 (DE-599)DOAJb1658bb1f6b84a3596b200a106cff89e DE-627 ger DE-627 rakwb eng TK1-9971 TA1-2040 QH201-278.5 QC120-168.85 Haddou EL Ghazi verfasserin aut High-Energy Radiation Effects on Silicon NPN Bipolar Transistor Electrical Performance: A Study with 1 MeV Proton Irradiation 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This study investigates the degradation of the silicon NPN transistor’s emitter-base junction, specifically the 2N2219A model, under both forward and reverse polarization. We examine the current–voltage characteristics under the influence of 1 MeV proton irradiation at various fluencies, which are <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mn<5.3</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<8</mn<</mrow<</msup<<mo<,</mo<<mn<5.3</mn<<msup<<mrow<<mo<×</mo<<mn<10</mn<</mrow<<mrow<<mn<10</mn<</mrow<</msup<<mo<,</mo<<mn<5</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<11</mn<</mrow<</msup<<mo<,</mo<<mn<5</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<12</mn<</mrow<</msup<</mrow<</semantics<</math<</inline-formula<, and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mn<5</mn<<msup<<mrow<<mo<×</mo<<mn<10</mn<</mrow<<mrow<<mn<13</mn<</mrow<</msup<</mrow<</semantics<</math<</inline-formula< protons/cm², all conducted at 307 K. The experimental findings elucidate a pronounced dependency of diode parameters, including the reverse saturation current, series resistance, and the non-idealist factor, on the incident proton flow. This observation underscores that proton-induced degradation is primarily driven by displacement damage, while recorded degradation is predominantly attributed to the generation of defects and interfacial traps within the transistor resulting from exposure to high-energy radiation. Our findings indicate that the effects of irradiation align more closely with the compensation phenomenon in doping rather than its reinforcement. silicon transistors NPN-BJTs emitter-base proton irradiation electric performance Technology T Electrical engineering. Electronics. Nuclear engineering Engineering (General). Civil engineering (General) Microscopy Descriptive and experimental mechanics Redouane En-nadir verfasserin aut Anouar Jorio verfasserin aut Mohamed A. Basyooni-M. Kabatas verfasserin aut In Materials MDPI AG, 2009 16(2023), 21, p 6977 (DE-627)595712649 (DE-600)2487261-1 19961944 nnns volume:16 year:2023 number:21, p 6977 https://doi.org/10.3390/ma16216977 kostenfrei https://doaj.org/article/b1658bb1f6b84a3596b200a106cff89e kostenfrei https://www.mdpi.com/1996-1944/16/21/6977 kostenfrei https://doaj.org/toc/1996-1944 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 16 2023 21, p 6977
allfields_unstemmed	10.3390/ma16216977 doi (DE-627)DOAJ095453474 (DE-599)DOAJb1658bb1f6b84a3596b200a106cff89e DE-627 ger DE-627 rakwb eng TK1-9971 TA1-2040 QH201-278.5 QC120-168.85 Haddou EL Ghazi verfasserin aut High-Energy Radiation Effects on Silicon NPN Bipolar Transistor Electrical Performance: A Study with 1 MeV Proton Irradiation 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This study investigates the degradation of the silicon NPN transistor’s emitter-base junction, specifically the 2N2219A model, under both forward and reverse polarization. We examine the current–voltage characteristics under the influence of 1 MeV proton irradiation at various fluencies, which are <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mn<5.3</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<8</mn<</mrow<</msup<<mo<,</mo<<mn<5.3</mn<<msup<<mrow<<mo<×</mo<<mn<10</mn<</mrow<<mrow<<mn<10</mn<</mrow<</msup<<mo<,</mo<<mn<5</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<11</mn<</mrow<</msup<<mo<,</mo<<mn<5</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<12</mn<</mrow<</msup<</mrow<</semantics<</math<</inline-formula<, and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mn<5</mn<<msup<<mrow<<mo<×</mo<<mn<10</mn<</mrow<<mrow<<mn<13</mn<</mrow<</msup<</mrow<</semantics<</math<</inline-formula< protons/cm², all conducted at 307 K. The experimental findings elucidate a pronounced dependency of diode parameters, including the reverse saturation current, series resistance, and the non-idealist factor, on the incident proton flow. This observation underscores that proton-induced degradation is primarily driven by displacement damage, while recorded degradation is predominantly attributed to the generation of defects and interfacial traps within the transistor resulting from exposure to high-energy radiation. Our findings indicate that the effects of irradiation align more closely with the compensation phenomenon in doping rather than its reinforcement. silicon transistors NPN-BJTs emitter-base proton irradiation electric performance Technology T Electrical engineering. Electronics. Nuclear engineering Engineering (General). Civil engineering (General) Microscopy Descriptive and experimental mechanics Redouane En-nadir verfasserin aut Anouar Jorio verfasserin aut Mohamed A. Basyooni-M. Kabatas verfasserin aut In Materials MDPI AG, 2009 16(2023), 21, p 6977 (DE-627)595712649 (DE-600)2487261-1 19961944 nnns volume:16 year:2023 number:21, p 6977 https://doi.org/10.3390/ma16216977 kostenfrei https://doaj.org/article/b1658bb1f6b84a3596b200a106cff89e kostenfrei https://www.mdpi.com/1996-1944/16/21/6977 kostenfrei https://doaj.org/toc/1996-1944 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 16 2023 21, p 6977
allfieldsGer	10.3390/ma16216977 doi (DE-627)DOAJ095453474 (DE-599)DOAJb1658bb1f6b84a3596b200a106cff89e DE-627 ger DE-627 rakwb eng TK1-9971 TA1-2040 QH201-278.5 QC120-168.85 Haddou EL Ghazi verfasserin aut High-Energy Radiation Effects on Silicon NPN Bipolar Transistor Electrical Performance: A Study with 1 MeV Proton Irradiation 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This study investigates the degradation of the silicon NPN transistor’s emitter-base junction, specifically the 2N2219A model, under both forward and reverse polarization. We examine the current–voltage characteristics under the influence of 1 MeV proton irradiation at various fluencies, which are <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mn<5.3</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<8</mn<</mrow<</msup<<mo<,</mo<<mn<5.3</mn<<msup<<mrow<<mo<×</mo<<mn<10</mn<</mrow<<mrow<<mn<10</mn<</mrow<</msup<<mo<,</mo<<mn<5</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<11</mn<</mrow<</msup<<mo<,</mo<<mn<5</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<12</mn<</mrow<</msup<</mrow<</semantics<</math<</inline-formula<, and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mn<5</mn<<msup<<mrow<<mo<×</mo<<mn<10</mn<</mrow<<mrow<<mn<13</mn<</mrow<</msup<</mrow<</semantics<</math<</inline-formula< protons/cm², all conducted at 307 K. The experimental findings elucidate a pronounced dependency of diode parameters, including the reverse saturation current, series resistance, and the non-idealist factor, on the incident proton flow. This observation underscores that proton-induced degradation is primarily driven by displacement damage, while recorded degradation is predominantly attributed to the generation of defects and interfacial traps within the transistor resulting from exposure to high-energy radiation. Our findings indicate that the effects of irradiation align more closely with the compensation phenomenon in doping rather than its reinforcement. silicon transistors NPN-BJTs emitter-base proton irradiation electric performance Technology T Electrical engineering. Electronics. Nuclear engineering Engineering (General). Civil engineering (General) Microscopy Descriptive and experimental mechanics Redouane En-nadir verfasserin aut Anouar Jorio verfasserin aut Mohamed A. Basyooni-M. Kabatas verfasserin aut In Materials MDPI AG, 2009 16(2023), 21, p 6977 (DE-627)595712649 (DE-600)2487261-1 19961944 nnns volume:16 year:2023 number:21, p 6977 https://doi.org/10.3390/ma16216977 kostenfrei https://doaj.org/article/b1658bb1f6b84a3596b200a106cff89e kostenfrei https://www.mdpi.com/1996-1944/16/21/6977 kostenfrei https://doaj.org/toc/1996-1944 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 16 2023 21, p 6977
allfieldsSound	10.3390/ma16216977 doi (DE-627)DOAJ095453474 (DE-599)DOAJb1658bb1f6b84a3596b200a106cff89e DE-627 ger DE-627 rakwb eng TK1-9971 TA1-2040 QH201-278.5 QC120-168.85 Haddou EL Ghazi verfasserin aut High-Energy Radiation Effects on Silicon NPN Bipolar Transistor Electrical Performance: A Study with 1 MeV Proton Irradiation 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This study investigates the degradation of the silicon NPN transistor’s emitter-base junction, specifically the 2N2219A model, under both forward and reverse polarization. We examine the current–voltage characteristics under the influence of 1 MeV proton irradiation at various fluencies, which are <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mn<5.3</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<8</mn<</mrow<</msup<<mo<,</mo<<mn<5.3</mn<<msup<<mrow<<mo<×</mo<<mn<10</mn<</mrow<<mrow<<mn<10</mn<</mrow<</msup<<mo<,</mo<<mn<5</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<11</mn<</mrow<</msup<<mo<,</mo<<mn<5</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<12</mn<</mrow<</msup<</mrow<</semantics<</math<</inline-formula<, and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mn<5</mn<<msup<<mrow<<mo<×</mo<<mn<10</mn<</mrow<<mrow<<mn<13</mn<</mrow<</msup<</mrow<</semantics<</math<</inline-formula< protons/cm², all conducted at 307 K. The experimental findings elucidate a pronounced dependency of diode parameters, including the reverse saturation current, series resistance, and the non-idealist factor, on the incident proton flow. This observation underscores that proton-induced degradation is primarily driven by displacement damage, while recorded degradation is predominantly attributed to the generation of defects and interfacial traps within the transistor resulting from exposure to high-energy radiation. Our findings indicate that the effects of irradiation align more closely with the compensation phenomenon in doping rather than its reinforcement. silicon transistors NPN-BJTs emitter-base proton irradiation electric performance Technology T Electrical engineering. Electronics. Nuclear engineering Engineering (General). Civil engineering (General) Microscopy Descriptive and experimental mechanics Redouane En-nadir verfasserin aut Anouar Jorio verfasserin aut Mohamed A. Basyooni-M. Kabatas verfasserin aut In Materials MDPI AG, 2009 16(2023), 21, p 6977 (DE-627)595712649 (DE-600)2487261-1 19961944 nnns volume:16 year:2023 number:21, p 6977 https://doi.org/10.3390/ma16216977 kostenfrei https://doaj.org/article/b1658bb1f6b84a3596b200a106cff89e kostenfrei https://www.mdpi.com/1996-1944/16/21/6977 kostenfrei https://doaj.org/toc/1996-1944 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_206 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2005 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2119 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 16 2023 21, p 6977
language	English
source	In Materials 16(2023), 21, p 6977 volume:16 year:2023 number:21, p 6977
sourceStr	In Materials 16(2023), 21, p 6977 volume:16 year:2023 number:21, p 6977
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	silicon transistors NPN-BJTs emitter-base proton irradiation electric performance Technology T Electrical engineering. Electronics. Nuclear engineering Engineering (General). Civil engineering (General) Microscopy Descriptive and experimental mechanics
isfreeaccess_bool	true
container_title	Materials
authorswithroles_txt_mv	Haddou EL Ghazi @@aut@@ Redouane En-nadir @@aut@@ Anouar Jorio @@aut@@ Mohamed A. Basyooni-M. Kabatas @@aut@@
publishDateDaySort_date	2023-01-01T00:00:00Z
hierarchy_top_id	595712649
id	DOAJ095453474
language_de	englisch
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callnumber-first	T - Technology
author	Haddou EL Ghazi
spellingShingle	Haddou EL Ghazi misc TK1-9971 misc TA1-2040 misc QH201-278.5 misc QC120-168.85 misc silicon transistors misc NPN-BJTs misc emitter-base misc proton irradiation misc electric performance misc Technology misc T misc Electrical engineering. Electronics. Nuclear engineering misc Engineering (General). Civil engineering (General) misc Microscopy misc Descriptive and experimental mechanics High-Energy Radiation Effects on Silicon NPN Bipolar Transistor Electrical Performance: A Study with 1 MeV Proton Irradiation
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topic_title	TK1-9971 TA1-2040 QH201-278.5 QC120-168.85 High-Energy Radiation Effects on Silicon NPN Bipolar Transistor Electrical Performance: A Study with 1 MeV Proton Irradiation silicon transistors NPN-BJTs emitter-base proton irradiation electric performance
topic	misc TK1-9971 misc TA1-2040 misc QH201-278.5 misc QC120-168.85 misc silicon transistors misc NPN-BJTs misc emitter-base misc proton irradiation misc electric performance misc Technology misc T misc Electrical engineering. Electronics. Nuclear engineering misc Engineering (General). Civil engineering (General) misc Microscopy misc Descriptive and experimental mechanics
topic_unstemmed	misc TK1-9971 misc TA1-2040 misc QH201-278.5 misc QC120-168.85 misc silicon transistors misc NPN-BJTs misc emitter-base misc proton irradiation misc electric performance misc Technology misc T misc Electrical engineering. Electronics. Nuclear engineering misc Engineering (General). Civil engineering (General) misc Microscopy misc Descriptive and experimental mechanics
topic_browse	misc TK1-9971 misc TA1-2040 misc QH201-278.5 misc QC120-168.85 misc silicon transistors misc NPN-BJTs misc emitter-base misc proton irradiation misc electric performance misc Technology misc T misc Electrical engineering. Electronics. Nuclear engineering misc Engineering (General). Civil engineering (General) misc Microscopy misc Descriptive and experimental mechanics
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title	High-Energy Radiation Effects on Silicon NPN Bipolar Transistor Electrical Performance: A Study with 1 MeV Proton Irradiation
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title_full	High-Energy Radiation Effects on Silicon NPN Bipolar Transistor Electrical Performance: A Study with 1 MeV Proton Irradiation
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author_browse	Haddou EL Ghazi Redouane En-nadir Anouar Jorio Mohamed A. Basyooni-M. Kabatas
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title_sort	high-energy radiation effects on silicon npn bipolar transistor electrical performance: a study with 1 mev proton irradiation
callnumber	TK1-9971
title_auth	High-Energy Radiation Effects on Silicon NPN Bipolar Transistor Electrical Performance: A Study with 1 MeV Proton Irradiation
abstract	This study investigates the degradation of the silicon NPN transistor’s emitter-base junction, specifically the 2N2219A model, under both forward and reverse polarization. We examine the current–voltage characteristics under the influence of 1 MeV proton irradiation at various fluencies, which are <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mn<5.3</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<8</mn<</mrow<</msup<<mo<,</mo<<mn<5.3</mn<<msup<<mrow<<mo<×</mo<<mn<10</mn<</mrow<<mrow<<mn<10</mn<</mrow<</msup<<mo<,</mo<<mn<5</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<11</mn<</mrow<</msup<<mo<,</mo<<mn<5</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<12</mn<</mrow<</msup<</mrow<</semantics<</math<</inline-formula<, and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mn<5</mn<<msup<<mrow<<mo<×</mo<<mn<10</mn<</mrow<<mrow<<mn<13</mn<</mrow<</msup<</mrow<</semantics<</math<</inline-formula< protons/cm², all conducted at 307 K. The experimental findings elucidate a pronounced dependency of diode parameters, including the reverse saturation current, series resistance, and the non-idealist factor, on the incident proton flow. This observation underscores that proton-induced degradation is primarily driven by displacement damage, while recorded degradation is predominantly attributed to the generation of defects and interfacial traps within the transistor resulting from exposure to high-energy radiation. Our findings indicate that the effects of irradiation align more closely with the compensation phenomenon in doping rather than its reinforcement.
abstractGer	This study investigates the degradation of the silicon NPN transistor’s emitter-base junction, specifically the 2N2219A model, under both forward and reverse polarization. We examine the current–voltage characteristics under the influence of 1 MeV proton irradiation at various fluencies, which are <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mn<5.3</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<8</mn<</mrow<</msup<<mo<,</mo<<mn<5.3</mn<<msup<<mrow<<mo<×</mo<<mn<10</mn<</mrow<<mrow<<mn<10</mn<</mrow<</msup<<mo<,</mo<<mn<5</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<11</mn<</mrow<</msup<<mo<,</mo<<mn<5</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<12</mn<</mrow<</msup<</mrow<</semantics<</math<</inline-formula<, and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mn<5</mn<<msup<<mrow<<mo<×</mo<<mn<10</mn<</mrow<<mrow<<mn<13</mn<</mrow<</msup<</mrow<</semantics<</math<</inline-formula< protons/cm², all conducted at 307 K. The experimental findings elucidate a pronounced dependency of diode parameters, including the reverse saturation current, series resistance, and the non-idealist factor, on the incident proton flow. This observation underscores that proton-induced degradation is primarily driven by displacement damage, while recorded degradation is predominantly attributed to the generation of defects and interfacial traps within the transistor resulting from exposure to high-energy radiation. Our findings indicate that the effects of irradiation align more closely with the compensation phenomenon in doping rather than its reinforcement.
abstract_unstemmed	This study investigates the degradation of the silicon NPN transistor’s emitter-base junction, specifically the 2N2219A model, under both forward and reverse polarization. We examine the current–voltage characteristics under the influence of 1 MeV proton irradiation at various fluencies, which are <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mn<5.3</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<8</mn<</mrow<</msup<<mo<,</mo<<mn<5.3</mn<<msup<<mrow<<mo<×</mo<<mn<10</mn<</mrow<<mrow<<mn<10</mn<</mrow<</msup<<mo<,</mo<<mn<5</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<11</mn<</mrow<</msup<<mo<,</mo<<mn<5</mn<<mo<×</mo<<msup<<mrow<<mn<10</mn<</mrow<<mrow<<mn<12</mn<</mrow<</msup<</mrow<</semantics<</math<</inline-formula<, and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<mn<5</mn<<msup<<mrow<<mo<×</mo<<mn<10</mn<</mrow<<mrow<<mn<13</mn<</mrow<</msup<</mrow<</semantics<</math<</inline-formula< protons/cm², all conducted at 307 K. The experimental findings elucidate a pronounced dependency of diode parameters, including the reverse saturation current, series resistance, and the non-idealist factor, on the incident proton flow. This observation underscores that proton-induced degradation is primarily driven by displacement damage, while recorded degradation is predominantly attributed to the generation of defects and interfacial traps within the transistor resulting from exposure to high-energy radiation. Our findings indicate that the effects of irradiation align more closely with the compensation phenomenon in doping rather than its reinforcement.
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