Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study

In this study, we propose an optimized AlGaN/GaN high-electron-mobility transistor (HEMT) with a considerably improved breakdown voltage. First, we matched the simulated data obtained from a basic T-gate HEMT with the measured data obtained from the fabricated device to ensure the reliability of the simulation. Thereafter, to improve the breakdown voltage, we suggested applying a gate-head extended structure. The gate-head-top and gate-head-bottom lengths of the basic T-gate HEMT were symmetrically extended by 0.2 μm steps up to 1.0 μm. The breakdown voltage of the 1.0 μm extended structure was 52% higher than that of the basic T-gate HEMT. However, the cutoff frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<) and maximum frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<) degraded. To minimize the degradation of <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<, we additionally introduced a gate-recessed structure to the 1.0 μm gate-head extended HEMT. The thickness of the 25 nm AlGaN barrier layer was thinned down to 13 nm in 3 nm steps, and the highest <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< were obtained at a 6 nm recessed structure. The <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< of the gate-recessed structure improved by 9% and 28%, respectively, with respect to those of the non-gate-recessed structure, and further improvement of the breakdown voltage by 35% was observed. Consequently, considering the trade-off relationship between the DC and RF characteristics, the 1.0 μm gate-head extended HEMT with the 6 nm gate-recessed structure was found to be the optimized AlGaN/GaN HEMT for high-power operations. Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Woo-Seok Kang [verfasserIn] Jun-Hyeok Choi [verfasserIn] Dohyung Kim [verfasserIn] Ji-Hun Kim [verfasserIn] Jun-Ho Lee [verfasserIn] Byoung-Gue Min [verfasserIn] Dong Min Kang [verfasserIn] Jung Han Choi [verfasserIn] Hyun-Seok Kim [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	gallium nitride high-electron-mobility transistor gate-head gate-recessed breakdown voltage

Übergeordnetes Werk:	In: Micromachines - MDPI AG, 2010, 15(2023), 1, p 57
Übergeordnetes Werk:	volume:15 ; year:2023 ; number:1, p 57

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/mi15010057

Katalog-ID:	DOAJ096316535

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245	1	0	\|a Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study
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520			\|a In this study, we propose an optimized AlGaN/GaN high-electron-mobility transistor (HEMT) with a considerably improved breakdown voltage. First, we matched the simulated data obtained from a basic T-gate HEMT with the measured data obtained from the fabricated device to ensure the reliability of the simulation. Thereafter, to improve the breakdown voltage, we suggested applying a gate-head extended structure. The gate-head-top and gate-head-bottom lengths of the basic T-gate HEMT were symmetrically extended by 0.2 μm steps up to 1.0 μm. The breakdown voltage of the 1.0 μm extended structure was 52% higher than that of the basic T-gate HEMT. However, the cutoff frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<) and maximum frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<) degraded. To minimize the degradation of <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<, we additionally introduced a gate-recessed structure to the 1.0 μm gate-head extended HEMT. The thickness of the 25 nm AlGaN barrier layer was thinned down to 13 nm in 3 nm steps, and the highest <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< were obtained at a 6 nm recessed structure. The <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< of the gate-recessed structure improved by 9% and 28%, respectively, with respect to those of the non-gate-recessed structure, and further improvement of the breakdown voltage by 35% was observed. Consequently, considering the trade-off relationship between the DC and RF characteristics, the 1.0 μm gate-head extended HEMT with the 6 nm gate-recessed structure was found to be the optimized AlGaN/GaN HEMT for high-power operations.
650		4	\|a gallium nitride
650		4	\|a high-electron-mobility transistor
650		4	\|a gate-head
650		4	\|a gate-recessed
650		4	\|a breakdown voltage
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700	0		\|a Jun-Hyeok Choi \|e verfasserin \|4 aut
700	0		\|a Dohyung Kim \|e verfasserin \|4 aut
700	0		\|a Ji-Hun Kim \|e verfasserin \|4 aut
700	0		\|a Jun-Ho Lee \|e verfasserin \|4 aut
700	0		\|a Byoung-Gue Min \|e verfasserin \|4 aut
700	0		\|a Dong Min Kang \|e verfasserin \|4 aut
700	0		\|a Jung Han Choi \|e verfasserin \|4 aut
700	0		\|a Hyun-Seok Kim \|e verfasserin \|4 aut
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allfields	10.3390/mi15010057 doi (DE-627)DOAJ096316535 (DE-599)DOAJe86c61714af2488490777364a675ffd0 DE-627 ger DE-627 rakwb eng TJ1-1570 Woo-Seok Kang verfasserin aut Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this study, we propose an optimized AlGaN/GaN high-electron-mobility transistor (HEMT) with a considerably improved breakdown voltage. First, we matched the simulated data obtained from a basic T-gate HEMT with the measured data obtained from the fabricated device to ensure the reliability of the simulation. Thereafter, to improve the breakdown voltage, we suggested applying a gate-head extended structure. The gate-head-top and gate-head-bottom lengths of the basic T-gate HEMT were symmetrically extended by 0.2 μm steps up to 1.0 μm. The breakdown voltage of the 1.0 μm extended structure was 52% higher than that of the basic T-gate HEMT. However, the cutoff frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<) and maximum frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<) degraded. To minimize the degradation of <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<, we additionally introduced a gate-recessed structure to the 1.0 μm gate-head extended HEMT. The thickness of the 25 nm AlGaN barrier layer was thinned down to 13 nm in 3 nm steps, and the highest <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< were obtained at a 6 nm recessed structure. The <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< of the gate-recessed structure improved by 9% and 28%, respectively, with respect to those of the non-gate-recessed structure, and further improvement of the breakdown voltage by 35% was observed. Consequently, considering the trade-off relationship between the DC and RF characteristics, the 1.0 μm gate-head extended HEMT with the 6 nm gate-recessed structure was found to be the optimized AlGaN/GaN HEMT for high-power operations. gallium nitride high-electron-mobility transistor gate-head gate-recessed breakdown voltage Mechanical engineering and machinery Jun-Hyeok Choi verfasserin aut Dohyung Kim verfasserin aut Ji-Hun Kim verfasserin aut Jun-Ho Lee verfasserin aut Byoung-Gue Min verfasserin aut Dong Min Kang verfasserin aut Jung Han Choi verfasserin aut Hyun-Seok Kim verfasserin aut In Micromachines MDPI AG, 2010 15(2023), 1, p 57 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:15 year:2023 number:1, p 57 https://doi.org/10.3390/mi15010057 kostenfrei https://doaj.org/article/e86c61714af2488490777364a675ffd0 kostenfrei https://www.mdpi.com/2072-666X/15/1/57 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 15 2023 1, p 57
spelling	10.3390/mi15010057 doi (DE-627)DOAJ096316535 (DE-599)DOAJe86c61714af2488490777364a675ffd0 DE-627 ger DE-627 rakwb eng TJ1-1570 Woo-Seok Kang verfasserin aut Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this study, we propose an optimized AlGaN/GaN high-electron-mobility transistor (HEMT) with a considerably improved breakdown voltage. First, we matched the simulated data obtained from a basic T-gate HEMT with the measured data obtained from the fabricated device to ensure the reliability of the simulation. Thereafter, to improve the breakdown voltage, we suggested applying a gate-head extended structure. The gate-head-top and gate-head-bottom lengths of the basic T-gate HEMT were symmetrically extended by 0.2 μm steps up to 1.0 μm. The breakdown voltage of the 1.0 μm extended structure was 52% higher than that of the basic T-gate HEMT. However, the cutoff frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<) and maximum frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<) degraded. To minimize the degradation of <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<, we additionally introduced a gate-recessed structure to the 1.0 μm gate-head extended HEMT. The thickness of the 25 nm AlGaN barrier layer was thinned down to 13 nm in 3 nm steps, and the highest <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< were obtained at a 6 nm recessed structure. The <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< of the gate-recessed structure improved by 9% and 28%, respectively, with respect to those of the non-gate-recessed structure, and further improvement of the breakdown voltage by 35% was observed. Consequently, considering the trade-off relationship between the DC and RF characteristics, the 1.0 μm gate-head extended HEMT with the 6 nm gate-recessed structure was found to be the optimized AlGaN/GaN HEMT for high-power operations. gallium nitride high-electron-mobility transistor gate-head gate-recessed breakdown voltage Mechanical engineering and machinery Jun-Hyeok Choi verfasserin aut Dohyung Kim verfasserin aut Ji-Hun Kim verfasserin aut Jun-Ho Lee verfasserin aut Byoung-Gue Min verfasserin aut Dong Min Kang verfasserin aut Jung Han Choi verfasserin aut Hyun-Seok Kim verfasserin aut In Micromachines MDPI AG, 2010 15(2023), 1, p 57 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:15 year:2023 number:1, p 57 https://doi.org/10.3390/mi15010057 kostenfrei https://doaj.org/article/e86c61714af2488490777364a675ffd0 kostenfrei https://www.mdpi.com/2072-666X/15/1/57 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 15 2023 1, p 57
allfields_unstemmed	10.3390/mi15010057 doi (DE-627)DOAJ096316535 (DE-599)DOAJe86c61714af2488490777364a675ffd0 DE-627 ger DE-627 rakwb eng TJ1-1570 Woo-Seok Kang verfasserin aut Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this study, we propose an optimized AlGaN/GaN high-electron-mobility transistor (HEMT) with a considerably improved breakdown voltage. First, we matched the simulated data obtained from a basic T-gate HEMT with the measured data obtained from the fabricated device to ensure the reliability of the simulation. Thereafter, to improve the breakdown voltage, we suggested applying a gate-head extended structure. The gate-head-top and gate-head-bottom lengths of the basic T-gate HEMT were symmetrically extended by 0.2 μm steps up to 1.0 μm. The breakdown voltage of the 1.0 μm extended structure was 52% higher than that of the basic T-gate HEMT. However, the cutoff frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<) and maximum frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<) degraded. To minimize the degradation of <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<, we additionally introduced a gate-recessed structure to the 1.0 μm gate-head extended HEMT. The thickness of the 25 nm AlGaN barrier layer was thinned down to 13 nm in 3 nm steps, and the highest <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< were obtained at a 6 nm recessed structure. The <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< of the gate-recessed structure improved by 9% and 28%, respectively, with respect to those of the non-gate-recessed structure, and further improvement of the breakdown voltage by 35% was observed. Consequently, considering the trade-off relationship between the DC and RF characteristics, the 1.0 μm gate-head extended HEMT with the 6 nm gate-recessed structure was found to be the optimized AlGaN/GaN HEMT for high-power operations. gallium nitride high-electron-mobility transistor gate-head gate-recessed breakdown voltage Mechanical engineering and machinery Jun-Hyeok Choi verfasserin aut Dohyung Kim verfasserin aut Ji-Hun Kim verfasserin aut Jun-Ho Lee verfasserin aut Byoung-Gue Min verfasserin aut Dong Min Kang verfasserin aut Jung Han Choi verfasserin aut Hyun-Seok Kim verfasserin aut In Micromachines MDPI AG, 2010 15(2023), 1, p 57 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:15 year:2023 number:1, p 57 https://doi.org/10.3390/mi15010057 kostenfrei https://doaj.org/article/e86c61714af2488490777364a675ffd0 kostenfrei https://www.mdpi.com/2072-666X/15/1/57 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 15 2023 1, p 57
allfieldsGer	10.3390/mi15010057 doi (DE-627)DOAJ096316535 (DE-599)DOAJe86c61714af2488490777364a675ffd0 DE-627 ger DE-627 rakwb eng TJ1-1570 Woo-Seok Kang verfasserin aut Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this study, we propose an optimized AlGaN/GaN high-electron-mobility transistor (HEMT) with a considerably improved breakdown voltage. First, we matched the simulated data obtained from a basic T-gate HEMT with the measured data obtained from the fabricated device to ensure the reliability of the simulation. Thereafter, to improve the breakdown voltage, we suggested applying a gate-head extended structure. The gate-head-top and gate-head-bottom lengths of the basic T-gate HEMT were symmetrically extended by 0.2 μm steps up to 1.0 μm. The breakdown voltage of the 1.0 μm extended structure was 52% higher than that of the basic T-gate HEMT. However, the cutoff frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<) and maximum frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<) degraded. To minimize the degradation of <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<, we additionally introduced a gate-recessed structure to the 1.0 μm gate-head extended HEMT. The thickness of the 25 nm AlGaN barrier layer was thinned down to 13 nm in 3 nm steps, and the highest <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< were obtained at a 6 nm recessed structure. The <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< of the gate-recessed structure improved by 9% and 28%, respectively, with respect to those of the non-gate-recessed structure, and further improvement of the breakdown voltage by 35% was observed. Consequently, considering the trade-off relationship between the DC and RF characteristics, the 1.0 μm gate-head extended HEMT with the 6 nm gate-recessed structure was found to be the optimized AlGaN/GaN HEMT for high-power operations. gallium nitride high-electron-mobility transistor gate-head gate-recessed breakdown voltage Mechanical engineering and machinery Jun-Hyeok Choi verfasserin aut Dohyung Kim verfasserin aut Ji-Hun Kim verfasserin aut Jun-Ho Lee verfasserin aut Byoung-Gue Min verfasserin aut Dong Min Kang verfasserin aut Jung Han Choi verfasserin aut Hyun-Seok Kim verfasserin aut In Micromachines MDPI AG, 2010 15(2023), 1, p 57 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:15 year:2023 number:1, p 57 https://doi.org/10.3390/mi15010057 kostenfrei https://doaj.org/article/e86c61714af2488490777364a675ffd0 kostenfrei https://www.mdpi.com/2072-666X/15/1/57 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 15 2023 1, p 57
allfieldsSound	10.3390/mi15010057 doi (DE-627)DOAJ096316535 (DE-599)DOAJe86c61714af2488490777364a675ffd0 DE-627 ger DE-627 rakwb eng TJ1-1570 Woo-Seok Kang verfasserin aut Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this study, we propose an optimized AlGaN/GaN high-electron-mobility transistor (HEMT) with a considerably improved breakdown voltage. First, we matched the simulated data obtained from a basic T-gate HEMT with the measured data obtained from the fabricated device to ensure the reliability of the simulation. Thereafter, to improve the breakdown voltage, we suggested applying a gate-head extended structure. The gate-head-top and gate-head-bottom lengths of the basic T-gate HEMT were symmetrically extended by 0.2 μm steps up to 1.0 μm. The breakdown voltage of the 1.0 μm extended structure was 52% higher than that of the basic T-gate HEMT. However, the cutoff frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<) and maximum frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<) degraded. To minimize the degradation of <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<, we additionally introduced a gate-recessed structure to the 1.0 μm gate-head extended HEMT. The thickness of the 25 nm AlGaN barrier layer was thinned down to 13 nm in 3 nm steps, and the highest <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< were obtained at a 6 nm recessed structure. The <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< of the gate-recessed structure improved by 9% and 28%, respectively, with respect to those of the non-gate-recessed structure, and further improvement of the breakdown voltage by 35% was observed. Consequently, considering the trade-off relationship between the DC and RF characteristics, the 1.0 μm gate-head extended HEMT with the 6 nm gate-recessed structure was found to be the optimized AlGaN/GaN HEMT for high-power operations. gallium nitride high-electron-mobility transistor gate-head gate-recessed breakdown voltage Mechanical engineering and machinery Jun-Hyeok Choi verfasserin aut Dohyung Kim verfasserin aut Ji-Hun Kim verfasserin aut Jun-Ho Lee verfasserin aut Byoung-Gue Min verfasserin aut Dong Min Kang verfasserin aut Jung Han Choi verfasserin aut Hyun-Seok Kim verfasserin aut In Micromachines MDPI AG, 2010 15(2023), 1, p 57 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:15 year:2023 number:1, p 57 https://doi.org/10.3390/mi15010057 kostenfrei https://doaj.org/article/e86c61714af2488490777364a675ffd0 kostenfrei https://www.mdpi.com/2072-666X/15/1/57 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 15 2023 1, p 57
language	English
source	In Micromachines 15(2023), 1, p 57 volume:15 year:2023 number:1, p 57
sourceStr	In Micromachines 15(2023), 1, p 57 volume:15 year:2023 number:1, p 57
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	gallium nitride high-electron-mobility transistor gate-head gate-recessed breakdown voltage Mechanical engineering and machinery
isfreeaccess_bool	true
container_title	Micromachines
authorswithroles_txt_mv	Woo-Seok Kang @@aut@@ Jun-Hyeok Choi @@aut@@ Dohyung Kim @@aut@@ Ji-Hun Kim @@aut@@ Jun-Ho Lee @@aut@@ Byoung-Gue Min @@aut@@ Dong Min Kang @@aut@@ Jung Han Choi @@aut@@ Hyun-Seok Kim @@aut@@
publishDateDaySort_date	2023-01-01T00:00:00Z
hierarchy_top_id	665016069
id	DOAJ096316535
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fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000naa a22002652 4500</leader><controlfield tag="001">DOAJ096316535</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20240413150223.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">240413s2023 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.3390/mi15010057</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)DOAJ096316535</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DOAJe86c61714af2488490777364a675ffd0</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TJ1-1570</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Woo-Seok Kang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2023</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">In this study, we propose an optimized AlGaN/GaN high-electron-mobility transistor (HEMT) with a considerably improved breakdown voltage. First, we matched the simulated data obtained from a basic T-gate HEMT with the measured data obtained from the fabricated device to ensure the reliability of the simulation. Thereafter, to improve the breakdown voltage, we suggested applying a gate-head extended structure. The gate-head-top and gate-head-bottom lengths of the basic T-gate HEMT were symmetrically extended by 0.2 μm steps up to 1.0 μm. The breakdown voltage of the 1.0 μm extended structure was 52% higher than that of the basic T-gate HEMT. However, the cutoff frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<) and maximum frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<) degraded. To minimize the degradation of <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<, we additionally introduced a gate-recessed structure to the 1.0 μm gate-head extended HEMT. The thickness of the 25 nm AlGaN barrier layer was thinned down to 13 nm in 3 nm steps, and the highest <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< were obtained at a 6 nm recessed structure. The <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< of the gate-recessed structure improved by 9% and 28%, respectively, with respect to those of the non-gate-recessed structure, and further improvement of the breakdown voltage by 35% was observed. Consequently, considering the trade-off relationship between the DC and RF characteristics, the 1.0 μm gate-head extended HEMT with the 6 nm gate-recessed structure was found to be the optimized AlGaN/GaN HEMT for high-power operations.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">gallium nitride</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">high-electron-mobility transistor</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">gate-head</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">gate-recessed</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">breakdown voltage</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Mechanical engineering and machinery</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Jun-Hyeok Choi</subfield><subfield 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callnumber-first	T - Technology
author	Woo-Seok Kang
spellingShingle	Woo-Seok Kang misc TJ1-1570 misc gallium nitride misc high-electron-mobility transistor misc gate-head misc gate-recessed misc breakdown voltage misc Mechanical engineering and machinery Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study
authorStr	Woo-Seok Kang
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topic_title	TJ1-1570 Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study gallium nitride high-electron-mobility transistor gate-head gate-recessed breakdown voltage
topic	misc TJ1-1570 misc gallium nitride misc high-electron-mobility transistor misc gate-head misc gate-recessed misc breakdown voltage misc Mechanical engineering and machinery
topic_unstemmed	misc TJ1-1570 misc gallium nitride misc high-electron-mobility transistor misc gate-head misc gate-recessed misc breakdown voltage misc Mechanical engineering and machinery
topic_browse	misc TJ1-1570 misc gallium nitride misc high-electron-mobility transistor misc gate-head misc gate-recessed misc breakdown voltage misc Mechanical engineering and machinery
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
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title	Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study
ctrlnum	(DE-627)DOAJ096316535 (DE-599)DOAJe86c61714af2488490777364a675ffd0
title_full	Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study
author_sort	Woo-Seok Kang
journal	Micromachines
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author_browse	Woo-Seok Kang Jun-Hyeok Choi Dohyung Kim Ji-Hun Kim Jun-Ho Lee Byoung-Gue Min Dong Min Kang Jung Han Choi Hyun-Seok Kim
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author-letter	Woo-Seok Kang
doi_str_mv	10.3390/mi15010057
author2-role	verfasserin
title_sort	optimization of gate-head-top/bottom lengths of algan/gan high-electron-mobility transistors with a gate-recessed structure for high-power operations: a simulation study
callnumber	TJ1-1570
title_auth	Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study
abstract	In this study, we propose an optimized AlGaN/GaN high-electron-mobility transistor (HEMT) with a considerably improved breakdown voltage. First, we matched the simulated data obtained from a basic T-gate HEMT with the measured data obtained from the fabricated device to ensure the reliability of the simulation. Thereafter, to improve the breakdown voltage, we suggested applying a gate-head extended structure. The gate-head-top and gate-head-bottom lengths of the basic T-gate HEMT were symmetrically extended by 0.2 μm steps up to 1.0 μm. The breakdown voltage of the 1.0 μm extended structure was 52% higher than that of the basic T-gate HEMT. However, the cutoff frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<) and maximum frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<) degraded. To minimize the degradation of <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<, we additionally introduced a gate-recessed structure to the 1.0 μm gate-head extended HEMT. The thickness of the 25 nm AlGaN barrier layer was thinned down to 13 nm in 3 nm steps, and the highest <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< were obtained at a 6 nm recessed structure. The <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< of the gate-recessed structure improved by 9% and 28%, respectively, with respect to those of the non-gate-recessed structure, and further improvement of the breakdown voltage by 35% was observed. Consequently, considering the trade-off relationship between the DC and RF characteristics, the 1.0 μm gate-head extended HEMT with the 6 nm gate-recessed structure was found to be the optimized AlGaN/GaN HEMT for high-power operations.
abstractGer	In this study, we propose an optimized AlGaN/GaN high-electron-mobility transistor (HEMT) with a considerably improved breakdown voltage. First, we matched the simulated data obtained from a basic T-gate HEMT with the measured data obtained from the fabricated device to ensure the reliability of the simulation. Thereafter, to improve the breakdown voltage, we suggested applying a gate-head extended structure. The gate-head-top and gate-head-bottom lengths of the basic T-gate HEMT were symmetrically extended by 0.2 μm steps up to 1.0 μm. The breakdown voltage of the 1.0 μm extended structure was 52% higher than that of the basic T-gate HEMT. However, the cutoff frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<) and maximum frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<) degraded. To minimize the degradation of <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<, we additionally introduced a gate-recessed structure to the 1.0 μm gate-head extended HEMT. The thickness of the 25 nm AlGaN barrier layer was thinned down to 13 nm in 3 nm steps, and the highest <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< were obtained at a 6 nm recessed structure. The <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< of the gate-recessed structure improved by 9% and 28%, respectively, with respect to those of the non-gate-recessed structure, and further improvement of the breakdown voltage by 35% was observed. Consequently, considering the trade-off relationship between the DC and RF characteristics, the 1.0 μm gate-head extended HEMT with the 6 nm gate-recessed structure was found to be the optimized AlGaN/GaN HEMT for high-power operations.
abstract_unstemmed	In this study, we propose an optimized AlGaN/GaN high-electron-mobility transistor (HEMT) with a considerably improved breakdown voltage. First, we matched the simulated data obtained from a basic T-gate HEMT with the measured data obtained from the fabricated device to ensure the reliability of the simulation. Thereafter, to improve the breakdown voltage, we suggested applying a gate-head extended structure. The gate-head-top and gate-head-bottom lengths of the basic T-gate HEMT were symmetrically extended by 0.2 μm steps up to 1.0 μm. The breakdown voltage of the 1.0 μm extended structure was 52% higher than that of the basic T-gate HEMT. However, the cutoff frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<) and maximum frequency (<inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<) degraded. To minimize the degradation of <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula<, we additionally introduced a gate-recessed structure to the 1.0 μm gate-head extended HEMT. The thickness of the 25 nm AlGaN barrier layer was thinned down to 13 nm in 3 nm steps, and the highest <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< were obtained at a 6 nm recessed structure. The <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< of the gate-recessed structure improved by 9% and 28%, respectively, with respect to those of the non-gate-recessed structure, and further improvement of the breakdown voltage by 35% was observed. Consequently, considering the trade-off relationship between the DC and RF characteristics, the 1.0 μm gate-head extended HEMT with the 6 nm gate-recessed structure was found to be the optimized AlGaN/GaN HEMT for high-power operations.
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container_issue	1, p 57
title_short	Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study
url	https://doi.org/10.3390/mi15010057 https://doaj.org/article/e86c61714af2488490777364a675ffd0 https://www.mdpi.com/2072-666X/15/1/57 https://doaj.org/toc/2072-666X
remote_bool	true
author2	Jun-Hyeok Choi Dohyung Kim Ji-Hun Kim Jun-Ho Lee Byoung-Gue Min Dong Min Kang Jung Han Choi Hyun-Seok Kim
author2Str	Jun-Hyeok Choi Dohyung Kim Ji-Hun Kim Jun-Ho Lee Byoung-Gue Min Dong Min Kang Jung Han Choi Hyun-Seok Kim
ppnlink	665016069
callnumber-subject	TJ - Mechanical Engineering and Machinery
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doi_str	10.3390/mi15010057
callnumber-a	TJ1-1570
up_date	2024-07-03T19:29:16.158Z
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The thickness of the 25 nm AlGaN barrier layer was thinned down to 13 nm in 3 nm steps, and the highest <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<T</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< and <inline-formula<<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"<<semantics<<mrow<<msub<<mrow<<mi mathvariant="normal"<f</mi<</mrow<<mrow<<mi mathvariant="normal"<m</mi<<mi mathvariant="normal"<a</mi<<mi mathvariant="normal"<x</mi<</mrow<</msub<</mrow<</semantics<</math<</inline-formula< were obtained at a 6 nm recessed structure. 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Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study

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