Formation of submicron relief structures on the surface of sapphire substrates
An analysis of technologies that allow creating microrelief structures on the surface of sapphire substrates has been carried out. It is shown that the most effective method of forming relief structures with submicron dimensions is ion beam etching through a protective mask formed by photolithogra...
Ausführliche Beschreibung
Autor*in: |
V.V. Petrov [verfasserIn] A.A. Kryuchyn [verfasserIn] I.V. Gorbov [verfasserIn] A.V. Pankratova [verfasserIn] D.Yu. Manko [verfasserIn] Yu.O. Borodin [verfasserIn] O.V. Shikhovets [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch ; Ukrainisch |
Erschienen: |
2023 |
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Schlagwörter: |
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Übergeordnetes Werk: |
In: Фізика і хімія твердого тіла - Vasyl Stefanyk Precarpathian National University, 2018, 24(2023), 2, Seite 298-303 |
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Übergeordnetes Werk: |
volume:24 ; year:2023 ; number:2 ; pages:298-303 |
Links: |
Link aufrufen |
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DOI / URN: |
10.15330/pcss.24.2.298-303 |
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Katalog-ID: |
DOAJ099495457 |
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10.15330/pcss.24.2.298-303 doi (DE-627)DOAJ099495457 (DE-599)DOAJ949f2246958848498d4a585a13c7f10d DE-627 ger DE-627 rakwb eng ukr QC1-999 V.V. Petrov verfasserin aut Formation of submicron relief structures on the surface of sapphire substrates 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier An analysis of technologies that allow creating microrelief structures on the surface of sapphire substrates has been carried out. It is shown that the most effective method of forming relief structures with submicron dimensions is ion beam etching through a protective mask formed by photolithography. The main problems in creating a microrelief on the surface of sapphire substrates are the removal of static electric charge in the process of ion beam etching of the substrates, as well as obtaining a protective mask with windows of specified sizes, through which etching of the sapphire substrate is performed. sapphire substrates selective etching microrelief structures protective mask direct laser recording Physics A.A. Kryuchyn verfasserin aut I.V. Gorbov verfasserin aut A.V. Pankratova verfasserin aut D.Yu. Manko verfasserin aut Yu.O. Borodin verfasserin aut O.V. Shikhovets verfasserin aut In Фізика і хімія твердого тіла Vasyl Stefanyk Precarpathian National University, 2018 24(2023), 2, Seite 298-303 (DE-627)1019902485 23098589 nnns volume:24 year:2023 number:2 pages:298-303 https://doi.org/10.15330/pcss.24.2.298-303 kostenfrei https://doaj.org/article/949f2246958848498d4a585a13c7f10d kostenfrei https://journals.pnu.edu.ua/index.php/pcss/article/view/6706 kostenfrei https://doaj.org/toc/1729-4428 Journal toc kostenfrei https://doaj.org/toc/2309-8589 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 24 2023 2 298-303 |
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10.15330/pcss.24.2.298-303 doi (DE-627)DOAJ099495457 (DE-599)DOAJ949f2246958848498d4a585a13c7f10d DE-627 ger DE-627 rakwb eng ukr QC1-999 V.V. Petrov verfasserin aut Formation of submicron relief structures on the surface of sapphire substrates 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier An analysis of technologies that allow creating microrelief structures on the surface of sapphire substrates has been carried out. It is shown that the most effective method of forming relief structures with submicron dimensions is ion beam etching through a protective mask formed by photolithography. The main problems in creating a microrelief on the surface of sapphire substrates are the removal of static electric charge in the process of ion beam etching of the substrates, as well as obtaining a protective mask with windows of specified sizes, through which etching of the sapphire substrate is performed. sapphire substrates selective etching microrelief structures protective mask direct laser recording Physics A.A. Kryuchyn verfasserin aut I.V. Gorbov verfasserin aut A.V. Pankratova verfasserin aut D.Yu. Manko verfasserin aut Yu.O. Borodin verfasserin aut O.V. Shikhovets verfasserin aut In Фізика і хімія твердого тіла Vasyl Stefanyk Precarpathian National University, 2018 24(2023), 2, Seite 298-303 (DE-627)1019902485 23098589 nnns volume:24 year:2023 number:2 pages:298-303 https://doi.org/10.15330/pcss.24.2.298-303 kostenfrei https://doaj.org/article/949f2246958848498d4a585a13c7f10d kostenfrei https://journals.pnu.edu.ua/index.php/pcss/article/view/6706 kostenfrei https://doaj.org/toc/1729-4428 Journal toc kostenfrei https://doaj.org/toc/2309-8589 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 24 2023 2 298-303 |
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10.15330/pcss.24.2.298-303 doi (DE-627)DOAJ099495457 (DE-599)DOAJ949f2246958848498d4a585a13c7f10d DE-627 ger DE-627 rakwb eng ukr QC1-999 V.V. Petrov verfasserin aut Formation of submicron relief structures on the surface of sapphire substrates 2023 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier An analysis of technologies that allow creating microrelief structures on the surface of sapphire substrates has been carried out. It is shown that the most effective method of forming relief structures with submicron dimensions is ion beam etching through a protective mask formed by photolithography. The main problems in creating a microrelief on the surface of sapphire substrates are the removal of static electric charge in the process of ion beam etching of the substrates, as well as obtaining a protective mask with windows of specified sizes, through which etching of the sapphire substrate is performed. sapphire substrates selective etching microrelief structures protective mask direct laser recording Physics A.A. Kryuchyn verfasserin aut I.V. Gorbov verfasserin aut A.V. Pankratova verfasserin aut D.Yu. Manko verfasserin aut Yu.O. Borodin verfasserin aut O.V. Shikhovets verfasserin aut In Фізика і хімія твердого тіла Vasyl Stefanyk Precarpathian National University, 2018 24(2023), 2, Seite 298-303 (DE-627)1019902485 23098589 nnns volume:24 year:2023 number:2 pages:298-303 https://doi.org/10.15330/pcss.24.2.298-303 kostenfrei https://doaj.org/article/949f2246958848498d4a585a13c7f10d kostenfrei https://journals.pnu.edu.ua/index.php/pcss/article/view/6706 kostenfrei https://doaj.org/toc/1729-4428 Journal toc kostenfrei https://doaj.org/toc/2309-8589 Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 24 2023 2 298-303 |
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An analysis of technologies that allow creating microrelief structures on the surface of sapphire substrates has been carried out. It is shown that the most effective method of forming relief structures with submicron dimensions is ion beam etching through a protective mask formed by photolithography. The main problems in creating a microrelief on the surface of sapphire substrates are the removal of static electric charge in the process of ion beam etching of the substrates, as well as obtaining a protective mask with windows of specified sizes, through which etching of the sapphire substrate is performed. |
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An analysis of technologies that allow creating microrelief structures on the surface of sapphire substrates has been carried out. It is shown that the most effective method of forming relief structures with submicron dimensions is ion beam etching through a protective mask formed by photolithography. The main problems in creating a microrelief on the surface of sapphire substrates are the removal of static electric charge in the process of ion beam etching of the substrates, as well as obtaining a protective mask with windows of specified sizes, through which etching of the sapphire substrate is performed. |
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An analysis of technologies that allow creating microrelief structures on the surface of sapphire substrates has been carried out. It is shown that the most effective method of forming relief structures with submicron dimensions is ion beam etching through a protective mask formed by photolithography. The main problems in creating a microrelief on the surface of sapphire substrates are the removal of static electric charge in the process of ion beam etching of the substrates, as well as obtaining a protective mask with windows of specified sizes, through which etching of the sapphire substrate is performed. |
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