Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model

This paper introduces the structure and characteristics of an internal-matching high-power Doherty power amplifier based on GaN HEMT devices with 0.25 μm process platforms from the Nanjing Electronic Devices Institute. Through parameter extraction and load-pull testing of the model transistor, an EE...
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Autor*in:	Renyi Li [verfasserIn] Chen Ge [verfasserIn] Chenwei Liang [verfasserIn] Shichang Zhong [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2024

Schlagwörter:	GaN HEMT EE_HEMT model Doherty PA

Übergeordnetes Werk:	In: Micromachines - MDPI AG, 2010, 15(2024), 3, p 388
Übergeordnetes Werk:	volume:15 ; year:2024 ; number:3, p 388

Links:	Link aufrufen Link aufrufen Link aufrufen Journal toc

DOI / URN:	10.3390/mi15030388

Katalog-ID:	DOAJ100462782

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allfields	10.3390/mi15030388 doi (DE-627)DOAJ100462782 (DE-599)DOAJ5189567c266c415d9d3c6432320ebee5 DE-627 ger DE-627 rakwb eng TJ1-1570 Renyi Li verfasserin aut Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model 2024 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper introduces the structure and characteristics of an internal-matching high-power Doherty power amplifier based on GaN HEMT devices with 0.25 μm process platforms from the Nanjing Electronic Devices Institute. Through parameter extraction and load-pull testing of the model transistor, an EE_HEMT model for the 1.2 mm gate-width GaN HEMT device was established. This model serves as the foundation for designing a high-power three-stage Doherty power amplifier. The amplifier achieved a saturated power gain exceeding 9 dB in continuous wave mode, with a saturated power output of 49.7 dBm. The drain efficiency was greater than 65% at 2.6 GHz. At 9 dB power back-off point, corresponding to an output power of 40.5 dBm, the drain efficiency remained above 55%. The performance of the amplifier remains consistent within the 2.55–2.62 GHz frequency range. The measured power, efficiency, and gain of the designed Doherty power amplifier align closely with the simulation results based on the EE_HEMT model, validating the accuracy of the established model. Furthermore, the in-band matching design reduces the size and weight of the amplifier. The amplifier maintains normal operation even after high and low-temperature testing, demonstrating its reliability. In conjunction with DPD (digital pre-distortion) for the modulated signal test, the amplifier exhibits extremely high linearity (ACLR < −50.93 dBc). This Doherty power amplifier holds potential applications in modern wireless communication scenarios. GaN HEMT EE_HEMT model Doherty PA Mechanical engineering and machinery Chen Ge verfasserin aut Chenwei Liang verfasserin aut Shichang Zhong verfasserin aut In Micromachines MDPI AG, 2010 15(2024), 3, p 388 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:15 year:2024 number:3, p 388 https://doi.org/10.3390/mi15030388 kostenfrei https://doaj.org/article/5189567c266c415d9d3c6432320ebee5 kostenfrei https://www.mdpi.com/2072-666X/15/3/388 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 15 2024 3, p 388
spelling	10.3390/mi15030388 doi (DE-627)DOAJ100462782 (DE-599)DOAJ5189567c266c415d9d3c6432320ebee5 DE-627 ger DE-627 rakwb eng TJ1-1570 Renyi Li verfasserin aut Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model 2024 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper introduces the structure and characteristics of an internal-matching high-power Doherty power amplifier based on GaN HEMT devices with 0.25 μm process platforms from the Nanjing Electronic Devices Institute. Through parameter extraction and load-pull testing of the model transistor, an EE_HEMT model for the 1.2 mm gate-width GaN HEMT device was established. This model serves as the foundation for designing a high-power three-stage Doherty power amplifier. The amplifier achieved a saturated power gain exceeding 9 dB in continuous wave mode, with a saturated power output of 49.7 dBm. The drain efficiency was greater than 65% at 2.6 GHz. At 9 dB power back-off point, corresponding to an output power of 40.5 dBm, the drain efficiency remained above 55%. The performance of the amplifier remains consistent within the 2.55–2.62 GHz frequency range. The measured power, efficiency, and gain of the designed Doherty power amplifier align closely with the simulation results based on the EE_HEMT model, validating the accuracy of the established model. Furthermore, the in-band matching design reduces the size and weight of the amplifier. The amplifier maintains normal operation even after high and low-temperature testing, demonstrating its reliability. In conjunction with DPD (digital pre-distortion) for the modulated signal test, the amplifier exhibits extremely high linearity (ACLR < −50.93 dBc). This Doherty power amplifier holds potential applications in modern wireless communication scenarios. GaN HEMT EE_HEMT model Doherty PA Mechanical engineering and machinery Chen Ge verfasserin aut Chenwei Liang verfasserin aut Shichang Zhong verfasserin aut In Micromachines MDPI AG, 2010 15(2024), 3, p 388 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:15 year:2024 number:3, p 388 https://doi.org/10.3390/mi15030388 kostenfrei https://doaj.org/article/5189567c266c415d9d3c6432320ebee5 kostenfrei https://www.mdpi.com/2072-666X/15/3/388 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 15 2024 3, p 388
allfields_unstemmed	10.3390/mi15030388 doi (DE-627)DOAJ100462782 (DE-599)DOAJ5189567c266c415d9d3c6432320ebee5 DE-627 ger DE-627 rakwb eng TJ1-1570 Renyi Li verfasserin aut Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model 2024 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper introduces the structure and characteristics of an internal-matching high-power Doherty power amplifier based on GaN HEMT devices with 0.25 μm process platforms from the Nanjing Electronic Devices Institute. Through parameter extraction and load-pull testing of the model transistor, an EE_HEMT model for the 1.2 mm gate-width GaN HEMT device was established. This model serves as the foundation for designing a high-power three-stage Doherty power amplifier. The amplifier achieved a saturated power gain exceeding 9 dB in continuous wave mode, with a saturated power output of 49.7 dBm. The drain efficiency was greater than 65% at 2.6 GHz. At 9 dB power back-off point, corresponding to an output power of 40.5 dBm, the drain efficiency remained above 55%. The performance of the amplifier remains consistent within the 2.55–2.62 GHz frequency range. The measured power, efficiency, and gain of the designed Doherty power amplifier align closely with the simulation results based on the EE_HEMT model, validating the accuracy of the established model. Furthermore, the in-band matching design reduces the size and weight of the amplifier. The amplifier maintains normal operation even after high and low-temperature testing, demonstrating its reliability. In conjunction with DPD (digital pre-distortion) for the modulated signal test, the amplifier exhibits extremely high linearity (ACLR < −50.93 dBc). This Doherty power amplifier holds potential applications in modern wireless communication scenarios. GaN HEMT EE_HEMT model Doherty PA Mechanical engineering and machinery Chen Ge verfasserin aut Chenwei Liang verfasserin aut Shichang Zhong verfasserin aut In Micromachines MDPI AG, 2010 15(2024), 3, p 388 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:15 year:2024 number:3, p 388 https://doi.org/10.3390/mi15030388 kostenfrei https://doaj.org/article/5189567c266c415d9d3c6432320ebee5 kostenfrei https://www.mdpi.com/2072-666X/15/3/388 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 15 2024 3, p 388
allfieldsGer	10.3390/mi15030388 doi (DE-627)DOAJ100462782 (DE-599)DOAJ5189567c266c415d9d3c6432320ebee5 DE-627 ger DE-627 rakwb eng TJ1-1570 Renyi Li verfasserin aut Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model 2024 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper introduces the structure and characteristics of an internal-matching high-power Doherty power amplifier based on GaN HEMT devices with 0.25 μm process platforms from the Nanjing Electronic Devices Institute. Through parameter extraction and load-pull testing of the model transistor, an EE_HEMT model for the 1.2 mm gate-width GaN HEMT device was established. This model serves as the foundation for designing a high-power three-stage Doherty power amplifier. The amplifier achieved a saturated power gain exceeding 9 dB in continuous wave mode, with a saturated power output of 49.7 dBm. The drain efficiency was greater than 65% at 2.6 GHz. At 9 dB power back-off point, corresponding to an output power of 40.5 dBm, the drain efficiency remained above 55%. The performance of the amplifier remains consistent within the 2.55–2.62 GHz frequency range. The measured power, efficiency, and gain of the designed Doherty power amplifier align closely with the simulation results based on the EE_HEMT model, validating the accuracy of the established model. Furthermore, the in-band matching design reduces the size and weight of the amplifier. The amplifier maintains normal operation even after high and low-temperature testing, demonstrating its reliability. In conjunction with DPD (digital pre-distortion) for the modulated signal test, the amplifier exhibits extremely high linearity (ACLR < −50.93 dBc). This Doherty power amplifier holds potential applications in modern wireless communication scenarios. GaN HEMT EE_HEMT model Doherty PA Mechanical engineering and machinery Chen Ge verfasserin aut Chenwei Liang verfasserin aut Shichang Zhong verfasserin aut In Micromachines MDPI AG, 2010 15(2024), 3, p 388 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:15 year:2024 number:3, p 388 https://doi.org/10.3390/mi15030388 kostenfrei https://doaj.org/article/5189567c266c415d9d3c6432320ebee5 kostenfrei https://www.mdpi.com/2072-666X/15/3/388 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 15 2024 3, p 388
allfieldsSound	10.3390/mi15030388 doi (DE-627)DOAJ100462782 (DE-599)DOAJ5189567c266c415d9d3c6432320ebee5 DE-627 ger DE-627 rakwb eng TJ1-1570 Renyi Li verfasserin aut Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model 2024 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper introduces the structure and characteristics of an internal-matching high-power Doherty power amplifier based on GaN HEMT devices with 0.25 μm process platforms from the Nanjing Electronic Devices Institute. Through parameter extraction and load-pull testing of the model transistor, an EE_HEMT model for the 1.2 mm gate-width GaN HEMT device was established. This model serves as the foundation for designing a high-power three-stage Doherty power amplifier. The amplifier achieved a saturated power gain exceeding 9 dB in continuous wave mode, with a saturated power output of 49.7 dBm. The drain efficiency was greater than 65% at 2.6 GHz. At 9 dB power back-off point, corresponding to an output power of 40.5 dBm, the drain efficiency remained above 55%. The performance of the amplifier remains consistent within the 2.55–2.62 GHz frequency range. The measured power, efficiency, and gain of the designed Doherty power amplifier align closely with the simulation results based on the EE_HEMT model, validating the accuracy of the established model. Furthermore, the in-band matching design reduces the size and weight of the amplifier. The amplifier maintains normal operation even after high and low-temperature testing, demonstrating its reliability. In conjunction with DPD (digital pre-distortion) for the modulated signal test, the amplifier exhibits extremely high linearity (ACLR < −50.93 dBc). This Doherty power amplifier holds potential applications in modern wireless communication scenarios. GaN HEMT EE_HEMT model Doherty PA Mechanical engineering and machinery Chen Ge verfasserin aut Chenwei Liang verfasserin aut Shichang Zhong verfasserin aut In Micromachines MDPI AG, 2010 15(2024), 3, p 388 (DE-627)665016069 (DE-600)2620864-7 2072666X nnns volume:15 year:2024 number:3, p 388 https://doi.org/10.3390/mi15030388 kostenfrei https://doaj.org/article/5189567c266c415d9d3c6432320ebee5 kostenfrei https://www.mdpi.com/2072-666X/15/3/388 kostenfrei https://doaj.org/toc/2072-666X Journal toc kostenfrei GBV_USEFLAG_A SYSFLAG_A GBV_DOAJ GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_151 GBV_ILN_161 GBV_ILN_170 GBV_ILN_213 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2014 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 15 2024 3, p 388
language	English
source	In Micromachines 15(2024), 3, p 388 volume:15 year:2024 number:3, p 388
sourceStr	In Micromachines 15(2024), 3, p 388 volume:15 year:2024 number:3, p 388
format_phy_str_mv	Article
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topic_facet	GaN HEMT EE_HEMT model Doherty PA Mechanical engineering and machinery
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container_title	Micromachines
authorswithroles_txt_mv	Renyi Li @@aut@@ Chen Ge @@aut@@ Chenwei Liang @@aut@@ Shichang Zhong @@aut@@
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callnumber-first	T - Technology
author	Renyi Li
spellingShingle	Renyi Li misc TJ1-1570 misc GaN HEMT misc EE_HEMT model misc Doherty PA misc Mechanical engineering and machinery Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model
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topic_title	TJ1-1570 Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model GaN HEMT EE_HEMT model Doherty PA
topic	misc TJ1-1570 misc GaN HEMT misc EE_HEMT model misc Doherty PA misc Mechanical engineering and machinery
topic_unstemmed	misc TJ1-1570 misc GaN HEMT misc EE_HEMT model misc Doherty PA misc Mechanical engineering and machinery
topic_browse	misc TJ1-1570 misc GaN HEMT misc EE_HEMT model misc Doherty PA misc Mechanical engineering and machinery
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title	Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model
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title_full	Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model
author_sort	Renyi Li
journal	Micromachines
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author_browse	Renyi Li Chen Ge Chenwei Liang Shichang Zhong
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format_se	Elektronische Aufsätze
author-letter	Renyi Li
doi_str_mv	10.3390/mi15030388
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title_sort	design of inner matching three-stage high-power doherty power amplifier based on gan hemt model
callnumber	TJ1-1570
title_auth	Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model
abstract	This paper introduces the structure and characteristics of an internal-matching high-power Doherty power amplifier based on GaN HEMT devices with 0.25 μm process platforms from the Nanjing Electronic Devices Institute. Through parameter extraction and load-pull testing of the model transistor, an EE_HEMT model for the 1.2 mm gate-width GaN HEMT device was established. This model serves as the foundation for designing a high-power three-stage Doherty power amplifier. The amplifier achieved a saturated power gain exceeding 9 dB in continuous wave mode, with a saturated power output of 49.7 dBm. The drain efficiency was greater than 65% at 2.6 GHz. At 9 dB power back-off point, corresponding to an output power of 40.5 dBm, the drain efficiency remained above 55%. The performance of the amplifier remains consistent within the 2.55–2.62 GHz frequency range. The measured power, efficiency, and gain of the designed Doherty power amplifier align closely with the simulation results based on the EE_HEMT model, validating the accuracy of the established model. Furthermore, the in-band matching design reduces the size and weight of the amplifier. The amplifier maintains normal operation even after high and low-temperature testing, demonstrating its reliability. In conjunction with DPD (digital pre-distortion) for the modulated signal test, the amplifier exhibits extremely high linearity (ACLR < −50.93 dBc). This Doherty power amplifier holds potential applications in modern wireless communication scenarios.
abstractGer	This paper introduces the structure and characteristics of an internal-matching high-power Doherty power amplifier based on GaN HEMT devices with 0.25 μm process platforms from the Nanjing Electronic Devices Institute. Through parameter extraction and load-pull testing of the model transistor, an EE_HEMT model for the 1.2 mm gate-width GaN HEMT device was established. This model serves as the foundation for designing a high-power three-stage Doherty power amplifier. The amplifier achieved a saturated power gain exceeding 9 dB in continuous wave mode, with a saturated power output of 49.7 dBm. The drain efficiency was greater than 65% at 2.6 GHz. At 9 dB power back-off point, corresponding to an output power of 40.5 dBm, the drain efficiency remained above 55%. The performance of the amplifier remains consistent within the 2.55–2.62 GHz frequency range. The measured power, efficiency, and gain of the designed Doherty power amplifier align closely with the simulation results based on the EE_HEMT model, validating the accuracy of the established model. Furthermore, the in-band matching design reduces the size and weight of the amplifier. The amplifier maintains normal operation even after high and low-temperature testing, demonstrating its reliability. In conjunction with DPD (digital pre-distortion) for the modulated signal test, the amplifier exhibits extremely high linearity (ACLR < −50.93 dBc). This Doherty power amplifier holds potential applications in modern wireless communication scenarios.
abstract_unstemmed	This paper introduces the structure and characteristics of an internal-matching high-power Doherty power amplifier based on GaN HEMT devices with 0.25 μm process platforms from the Nanjing Electronic Devices Institute. Through parameter extraction and load-pull testing of the model transistor, an EE_HEMT model for the 1.2 mm gate-width GaN HEMT device was established. This model serves as the foundation for designing a high-power three-stage Doherty power amplifier. The amplifier achieved a saturated power gain exceeding 9 dB in continuous wave mode, with a saturated power output of 49.7 dBm. The drain efficiency was greater than 65% at 2.6 GHz. At 9 dB power back-off point, corresponding to an output power of 40.5 dBm, the drain efficiency remained above 55%. The performance of the amplifier remains consistent within the 2.55–2.62 GHz frequency range. The measured power, efficiency, and gain of the designed Doherty power amplifier align closely with the simulation results based on the EE_HEMT model, validating the accuracy of the established model. Furthermore, the in-band matching design reduces the size and weight of the amplifier. The amplifier maintains normal operation even after high and low-temperature testing, demonstrating its reliability. In conjunction with DPD (digital pre-distortion) for the modulated signal test, the amplifier exhibits extremely high linearity (ACLR < −50.93 dBc). This Doherty power amplifier holds potential applications in modern wireless communication scenarios.
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container_issue	3, p 388
title_short	Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model
url	https://doi.org/10.3390/mi15030388 https://doaj.org/article/5189567c266c415d9d3c6432320ebee5 https://www.mdpi.com/2072-666X/15/3/388 https://doaj.org/toc/2072-666X
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doi_str	10.3390/mi15030388
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up_date	2024-07-03T14:48:48.933Z
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