Analysis of the electronic properties of all-electroplated ZnS, CdS and CdTe graded bandgap photovoltaic device configuration

All-electrodeposited ZnS, CdS and CdTe thin layers have been incorporated in a graded bandgap solar cell structure of glass/FTO/n-ZnS/n-CdS/n-CdTe/Au have been fabricated and an average conversion efficiency of 14.18% was achieved under AM1.5 illuminated condition. Based on former work in which 10%...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Ojo, A.A. [verfasserIn] Dharmadasa, I.M. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2017

Schlagwörter:	ZnS CdS CdTe CdCl Graded bandgap

Übergeordnetes Werk:	Enthalten in: Solar energy - Amsterdam [u.a.] : Elsevier Science, 1957, 158, Seite 721-727
Übergeordnetes Werk:	volume:158 ; pages:721-727

DOI / URN:	10.1016/j.solener.2017.10.042

Katalog-ID:	ELV00006680X

Internformat


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520			\|a All-electrodeposited ZnS, CdS and CdTe thin layers have been incorporated in a graded bandgap solar cell structure of glass/FTO/n-ZnS/n-CdS/n-CdTe/Au have been fabricated and an average conversion efficiency of 14.18% was achieved under AM1.5 illuminated condition. Based on former work in which 10% conversion efficiency was reported, optimisation has been made to the semiconductor layers, precursors, thicknesses and the post-growth treatment. These results demonstrate the advantages of multi-layer graded bandgap device configuration and the inclusion of gallium based post-growth treatment (CdCl2+Ga2(SO4)3) on the CdS/CdTe-based device structure. The fabricated devices were characterised using both current-voltage (I-V) and capacitance-voltage (C-V) techniques. Under dark I-V condition, a rectification factor (R.F.) of 104.8, ideality factor (n) of 1.60 and a barrier height (ϕb ) >0.82 eV were observed. Under AM1.5 illuminated I-V condition, short-circuit current density (Jsc ) of 34.08 mA cm−2, open-circuit voltage (Voc ) of 730 mV, fill-factor (FF) of 0.57 and conversion efficiency of 14.18% were observed. Under dark C-V condition, doping density (ND ) of 7.79×1014 cm−3 and a depletion width (W) of 1092 nm were achieved. In addition, the work demonstrates the capability of two-electrode system as a simplification to the conventional three-electrode system in the electrodeposition of semiconductors.
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Indexfelder

author_variant	a o ao i d id
matchkey_str	article:14711257:2017----::nlssfheetoipoeteoallcrpaezsdadderddadapo
hierarchy_sort_str	2017
bklnumber	52.56
publishDate	2017
allfields	10.1016/j.solener.2017.10.042 doi (DE-627)ELV00006680X (ELSEVIER)S0038-092X(17)30910-6 DE-627 ger DE-627 rda eng 530 DE-600 52.56 bkl Ojo, A.A. verfasserin aut Analysis of the electronic properties of all-electroplated ZnS, CdS and CdTe graded bandgap photovoltaic device configuration 2017 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier All-electrodeposited ZnS, CdS and CdTe thin layers have been incorporated in a graded bandgap solar cell structure of glass/FTO/n-ZnS/n-CdS/n-CdTe/Au have been fabricated and an average conversion efficiency of 14.18% was achieved under AM1.5 illuminated condition. Based on former work in which 10% conversion efficiency was reported, optimisation has been made to the semiconductor layers, precursors, thicknesses and the post-growth treatment. These results demonstrate the advantages of multi-layer graded bandgap device configuration and the inclusion of gallium based post-growth treatment (CdCl2+Ga2(SO4)3) on the CdS/CdTe-based device structure. The fabricated devices were characterised using both current-voltage (I-V) and capacitance-voltage (C-V) techniques. Under dark I-V condition, a rectification factor (R.F.) of 104.8, ideality factor (n) of 1.60 and a barrier height (ϕb ) >0.82 eV were observed. Under AM1.5 illuminated I-V condition, short-circuit current density (Jsc ) of 34.08 mA cm−2, open-circuit voltage (Voc ) of 730 mV, fill-factor (FF) of 0.57 and conversion efficiency of 14.18% were observed. Under dark C-V condition, doping density (ND ) of 7.79×1014 cm−3 and a depletion width (W) of 1092 nm were achieved. In addition, the work demonstrates the capability of two-electrode system as a simplification to the conventional three-electrode system in the electrodeposition of semiconductors. ZnS CdS CdTe CdCl Graded bandgap Dharmadasa, I.M. verfasserin aut Enthalten in Solar energy Amsterdam [u.a.] : Elsevier Science, 1957 158, Seite 721-727 Online-Ressource (DE-627)320525597 (DE-600)2015126-3 (DE-576)096806648 1471-1257 nnns volume:158 pages:721-727 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2098 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 52.56 Regenerative Energieformen alternative Energieformen AR 158 721-727
spelling	10.1016/j.solener.2017.10.042 doi (DE-627)ELV00006680X (ELSEVIER)S0038-092X(17)30910-6 DE-627 ger DE-627 rda eng 530 DE-600 52.56 bkl Ojo, A.A. verfasserin aut Analysis of the electronic properties of all-electroplated ZnS, CdS and CdTe graded bandgap photovoltaic device configuration 2017 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier All-electrodeposited ZnS, CdS and CdTe thin layers have been incorporated in a graded bandgap solar cell structure of glass/FTO/n-ZnS/n-CdS/n-CdTe/Au have been fabricated and an average conversion efficiency of 14.18% was achieved under AM1.5 illuminated condition. Based on former work in which 10% conversion efficiency was reported, optimisation has been made to the semiconductor layers, precursors, thicknesses and the post-growth treatment. These results demonstrate the advantages of multi-layer graded bandgap device configuration and the inclusion of gallium based post-growth treatment (CdCl2+Ga2(SO4)3) on the CdS/CdTe-based device structure. The fabricated devices were characterised using both current-voltage (I-V) and capacitance-voltage (C-V) techniques. Under dark I-V condition, a rectification factor (R.F.) of 104.8, ideality factor (n) of 1.60 and a barrier height (ϕb ) >0.82 eV were observed. Under AM1.5 illuminated I-V condition, short-circuit current density (Jsc ) of 34.08 mA cm−2, open-circuit voltage (Voc ) of 730 mV, fill-factor (FF) of 0.57 and conversion efficiency of 14.18% were observed. Under dark C-V condition, doping density (ND ) of 7.79×1014 cm−3 and a depletion width (W) of 1092 nm were achieved. In addition, the work demonstrates the capability of two-electrode system as a simplification to the conventional three-electrode system in the electrodeposition of semiconductors. ZnS CdS CdTe CdCl Graded bandgap Dharmadasa, I.M. verfasserin aut Enthalten in Solar energy Amsterdam [u.a.] : Elsevier Science, 1957 158, Seite 721-727 Online-Ressource (DE-627)320525597 (DE-600)2015126-3 (DE-576)096806648 1471-1257 nnns volume:158 pages:721-727 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2098 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 52.56 Regenerative Energieformen alternative Energieformen AR 158 721-727
allfields_unstemmed	10.1016/j.solener.2017.10.042 doi (DE-627)ELV00006680X (ELSEVIER)S0038-092X(17)30910-6 DE-627 ger DE-627 rda eng 530 DE-600 52.56 bkl Ojo, A.A. verfasserin aut Analysis of the electronic properties of all-electroplated ZnS, CdS and CdTe graded bandgap photovoltaic device configuration 2017 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier All-electrodeposited ZnS, CdS and CdTe thin layers have been incorporated in a graded bandgap solar cell structure of glass/FTO/n-ZnS/n-CdS/n-CdTe/Au have been fabricated and an average conversion efficiency of 14.18% was achieved under AM1.5 illuminated condition. Based on former work in which 10% conversion efficiency was reported, optimisation has been made to the semiconductor layers, precursors, thicknesses and the post-growth treatment. These results demonstrate the advantages of multi-layer graded bandgap device configuration and the inclusion of gallium based post-growth treatment (CdCl2+Ga2(SO4)3) on the CdS/CdTe-based device structure. The fabricated devices were characterised using both current-voltage (I-V) and capacitance-voltage (C-V) techniques. Under dark I-V condition, a rectification factor (R.F.) of 104.8, ideality factor (n) of 1.60 and a barrier height (ϕb ) >0.82 eV were observed. Under AM1.5 illuminated I-V condition, short-circuit current density (Jsc ) of 34.08 mA cm−2, open-circuit voltage (Voc ) of 730 mV, fill-factor (FF) of 0.57 and conversion efficiency of 14.18% were observed. Under dark C-V condition, doping density (ND ) of 7.79×1014 cm−3 and a depletion width (W) of 1092 nm were achieved. In addition, the work demonstrates the capability of two-electrode system as a simplification to the conventional three-electrode system in the electrodeposition of semiconductors. ZnS CdS CdTe CdCl Graded bandgap Dharmadasa, I.M. verfasserin aut Enthalten in Solar energy Amsterdam [u.a.] : Elsevier Science, 1957 158, Seite 721-727 Online-Ressource (DE-627)320525597 (DE-600)2015126-3 (DE-576)096806648 1471-1257 nnns volume:158 pages:721-727 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2098 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 52.56 Regenerative Energieformen alternative Energieformen AR 158 721-727
allfieldsGer	10.1016/j.solener.2017.10.042 doi (DE-627)ELV00006680X (ELSEVIER)S0038-092X(17)30910-6 DE-627 ger DE-627 rda eng 530 DE-600 52.56 bkl Ojo, A.A. verfasserin aut Analysis of the electronic properties of all-electroplated ZnS, CdS and CdTe graded bandgap photovoltaic device configuration 2017 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier All-electrodeposited ZnS, CdS and CdTe thin layers have been incorporated in a graded bandgap solar cell structure of glass/FTO/n-ZnS/n-CdS/n-CdTe/Au have been fabricated and an average conversion efficiency of 14.18% was achieved under AM1.5 illuminated condition. Based on former work in which 10% conversion efficiency was reported, optimisation has been made to the semiconductor layers, precursors, thicknesses and the post-growth treatment. These results demonstrate the advantages of multi-layer graded bandgap device configuration and the inclusion of gallium based post-growth treatment (CdCl2+Ga2(SO4)3) on the CdS/CdTe-based device structure. The fabricated devices were characterised using both current-voltage (I-V) and capacitance-voltage (C-V) techniques. Under dark I-V condition, a rectification factor (R.F.) of 104.8, ideality factor (n) of 1.60 and a barrier height (ϕb ) >0.82 eV were observed. Under AM1.5 illuminated I-V condition, short-circuit current density (Jsc ) of 34.08 mA cm−2, open-circuit voltage (Voc ) of 730 mV, fill-factor (FF) of 0.57 and conversion efficiency of 14.18% were observed. Under dark C-V condition, doping density (ND ) of 7.79×1014 cm−3 and a depletion width (W) of 1092 nm were achieved. In addition, the work demonstrates the capability of two-electrode system as a simplification to the conventional three-electrode system in the electrodeposition of semiconductors. ZnS CdS CdTe CdCl Graded bandgap Dharmadasa, I.M. verfasserin aut Enthalten in Solar energy Amsterdam [u.a.] : Elsevier Science, 1957 158, Seite 721-727 Online-Ressource (DE-627)320525597 (DE-600)2015126-3 (DE-576)096806648 1471-1257 nnns volume:158 pages:721-727 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2098 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 52.56 Regenerative Energieformen alternative Energieformen AR 158 721-727
allfieldsSound	10.1016/j.solener.2017.10.042 doi (DE-627)ELV00006680X (ELSEVIER)S0038-092X(17)30910-6 DE-627 ger DE-627 rda eng 530 DE-600 52.56 bkl Ojo, A.A. verfasserin aut Analysis of the electronic properties of all-electroplated ZnS, CdS and CdTe graded bandgap photovoltaic device configuration 2017 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier All-electrodeposited ZnS, CdS and CdTe thin layers have been incorporated in a graded bandgap solar cell structure of glass/FTO/n-ZnS/n-CdS/n-CdTe/Au have been fabricated and an average conversion efficiency of 14.18% was achieved under AM1.5 illuminated condition. Based on former work in which 10% conversion efficiency was reported, optimisation has been made to the semiconductor layers, precursors, thicknesses and the post-growth treatment. These results demonstrate the advantages of multi-layer graded bandgap device configuration and the inclusion of gallium based post-growth treatment (CdCl2+Ga2(SO4)3) on the CdS/CdTe-based device structure. The fabricated devices were characterised using both current-voltage (I-V) and capacitance-voltage (C-V) techniques. Under dark I-V condition, a rectification factor (R.F.) of 104.8, ideality factor (n) of 1.60 and a barrier height (ϕb ) >0.82 eV were observed. Under AM1.5 illuminated I-V condition, short-circuit current density (Jsc ) of 34.08 mA cm−2, open-circuit voltage (Voc ) of 730 mV, fill-factor (FF) of 0.57 and conversion efficiency of 14.18% were observed. Under dark C-V condition, doping density (ND ) of 7.79×1014 cm−3 and a depletion width (W) of 1092 nm were achieved. In addition, the work demonstrates the capability of two-electrode system as a simplification to the conventional three-electrode system in the electrodeposition of semiconductors. ZnS CdS CdTe CdCl Graded bandgap Dharmadasa, I.M. verfasserin aut Enthalten in Solar energy Amsterdam [u.a.] : Elsevier Science, 1957 158, Seite 721-727 Online-Ressource (DE-627)320525597 (DE-600)2015126-3 (DE-576)096806648 1471-1257 nnns volume:158 pages:721-727 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2098 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 52.56 Regenerative Energieformen alternative Energieformen AR 158 721-727
language	English
source	Enthalten in Solar energy 158, Seite 721-727 volume:158 pages:721-727
sourceStr	Enthalten in Solar energy 158, Seite 721-727 volume:158 pages:721-727
format_phy_str_mv	Article
bklname	Regenerative Energieformen alternative Energieformen
institution	findex.gbv.de
topic_facet	ZnS CdS CdTe CdCl Graded bandgap
dewey-raw	530
isfreeaccess_bool	false
container_title	Solar energy
authorswithroles_txt_mv	Ojo, A.A. @@aut@@ Dharmadasa, I.M. @@aut@@
publishDateDaySort_date	2017-01-01T00:00:00Z
hierarchy_top_id	320525597
dewey-sort	3530
id	ELV00006680X
language_de	englisch
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author	Ojo, A.A.
spellingShingle	Ojo, A.A. ddc 530 bkl 52.56 misc ZnS misc CdS misc CdTe misc CdCl misc Graded bandgap Analysis of the electronic properties of all-electroplated ZnS, CdS and CdTe graded bandgap photovoltaic device configuration
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topic_title	530 DE-600 52.56 bkl Analysis of the electronic properties of all-electroplated ZnS, CdS and CdTe graded bandgap photovoltaic device configuration ZnS CdS CdTe CdCl Graded bandgap
topic	ddc 530 bkl 52.56 misc ZnS misc CdS misc CdTe misc CdCl misc Graded bandgap
topic_unstemmed	ddc 530 bkl 52.56 misc ZnS misc CdS misc CdTe misc CdCl misc Graded bandgap
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title	Analysis of the electronic properties of all-electroplated ZnS, CdS and CdTe graded bandgap photovoltaic device configuration
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title_full	Analysis of the electronic properties of all-electroplated ZnS, CdS and CdTe graded bandgap photovoltaic device configuration
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author_browse	Ojo, A.A. Dharmadasa, I.M.
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doi_str_mv	10.1016/j.solener.2017.10.042
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title_sort	analysis of the electronic properties of all-electroplated zns, cds and cdte graded bandgap photovoltaic device configuration
title_auth	Analysis of the electronic properties of all-electroplated ZnS, CdS and CdTe graded bandgap photovoltaic device configuration
abstract	All-electrodeposited ZnS, CdS and CdTe thin layers have been incorporated in a graded bandgap solar cell structure of glass/FTO/n-ZnS/n-CdS/n-CdTe/Au have been fabricated and an average conversion efficiency of 14.18% was achieved under AM1.5 illuminated condition. Based on former work in which 10% conversion efficiency was reported, optimisation has been made to the semiconductor layers, precursors, thicknesses and the post-growth treatment. These results demonstrate the advantages of multi-layer graded bandgap device configuration and the inclusion of gallium based post-growth treatment (CdCl2+Ga2(SO4)3) on the CdS/CdTe-based device structure. The fabricated devices were characterised using both current-voltage (I-V) and capacitance-voltage (C-V) techniques. Under dark I-V condition, a rectification factor (R.F.) of 104.8, ideality factor (n) of 1.60 and a barrier height (ϕb ) >0.82 eV were observed. Under AM1.5 illuminated I-V condition, short-circuit current density (Jsc ) of 34.08 mA cm−2, open-circuit voltage (Voc ) of 730 mV, fill-factor (FF) of 0.57 and conversion efficiency of 14.18% were observed. Under dark C-V condition, doping density (ND ) of 7.79×1014 cm−3 and a depletion width (W) of 1092 nm were achieved. In addition, the work demonstrates the capability of two-electrode system as a simplification to the conventional three-electrode system in the electrodeposition of semiconductors.
abstractGer	All-electrodeposited ZnS, CdS and CdTe thin layers have been incorporated in a graded bandgap solar cell structure of glass/FTO/n-ZnS/n-CdS/n-CdTe/Au have been fabricated and an average conversion efficiency of 14.18% was achieved under AM1.5 illuminated condition. Based on former work in which 10% conversion efficiency was reported, optimisation has been made to the semiconductor layers, precursors, thicknesses and the post-growth treatment. These results demonstrate the advantages of multi-layer graded bandgap device configuration and the inclusion of gallium based post-growth treatment (CdCl2+Ga2(SO4)3) on the CdS/CdTe-based device structure. The fabricated devices were characterised using both current-voltage (I-V) and capacitance-voltage (C-V) techniques. Under dark I-V condition, a rectification factor (R.F.) of 104.8, ideality factor (n) of 1.60 and a barrier height (ϕb ) >0.82 eV were observed. Under AM1.5 illuminated I-V condition, short-circuit current density (Jsc ) of 34.08 mA cm−2, open-circuit voltage (Voc ) of 730 mV, fill-factor (FF) of 0.57 and conversion efficiency of 14.18% were observed. Under dark C-V condition, doping density (ND ) of 7.79×1014 cm−3 and a depletion width (W) of 1092 nm were achieved. In addition, the work demonstrates the capability of two-electrode system as a simplification to the conventional three-electrode system in the electrodeposition of semiconductors.
abstract_unstemmed	All-electrodeposited ZnS, CdS and CdTe thin layers have been incorporated in a graded bandgap solar cell structure of glass/FTO/n-ZnS/n-CdS/n-CdTe/Au have been fabricated and an average conversion efficiency of 14.18% was achieved under AM1.5 illuminated condition. Based on former work in which 10% conversion efficiency was reported, optimisation has been made to the semiconductor layers, precursors, thicknesses and the post-growth treatment. These results demonstrate the advantages of multi-layer graded bandgap device configuration and the inclusion of gallium based post-growth treatment (CdCl2+Ga2(SO4)3) on the CdS/CdTe-based device structure. The fabricated devices were characterised using both current-voltage (I-V) and capacitance-voltage (C-V) techniques. Under dark I-V condition, a rectification factor (R.F.) of 104.8, ideality factor (n) of 1.60 and a barrier height (ϕb ) >0.82 eV were observed. Under AM1.5 illuminated I-V condition, short-circuit current density (Jsc ) of 34.08 mA cm−2, open-circuit voltage (Voc ) of 730 mV, fill-factor (FF) of 0.57 and conversion efficiency of 14.18% were observed. Under dark C-V condition, doping density (ND ) of 7.79×1014 cm−3 and a depletion width (W) of 1092 nm were achieved. In addition, the work demonstrates the capability of two-electrode system as a simplification to the conventional three-electrode system in the electrodeposition of semiconductors.
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title_short	Analysis of the electronic properties of all-electroplated ZnS, CdS and CdTe graded bandgap photovoltaic device configuration
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doi_str	10.1016/j.solener.2017.10.042
up_date	2024-07-06T16:45:15.751Z
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fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV00006680X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230524143218.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230427s2017 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.solener.2017.10.042</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV00006680X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0038-092X(17)30910-6</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">52.56</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Ojo, A.A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Analysis of the electronic properties of all-electroplated ZnS, CdS and CdTe graded bandgap photovoltaic device configuration</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2017</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">All-electrodeposited ZnS, CdS and CdTe thin layers have been incorporated in a graded bandgap solar cell structure of glass/FTO/n-ZnS/n-CdS/n-CdTe/Au have been fabricated and an average conversion efficiency of 14.18% was achieved under AM1.5 illuminated condition. Based on former work in which 10% conversion efficiency was reported, optimisation has been made to the semiconductor layers, precursors, thicknesses and the post-growth treatment. These results demonstrate the advantages of multi-layer graded bandgap device configuration and the inclusion of gallium based post-growth treatment (CdCl2+Ga2(SO4)3) on the CdS/CdTe-based device structure. The fabricated devices were characterised using both current-voltage (I-V) and capacitance-voltage (C-V) techniques. Under dark I-V condition, a rectification factor (R.F.) of 104.8, ideality factor (n) of 1.60 and a barrier height (ϕb ) >0.82 eV were observed. Under AM1.5 illuminated I-V condition, short-circuit current density (Jsc ) of 34.08 mA cm−2, open-circuit voltage (Voc ) of 730 mV, fill-factor (FF) of 0.57 and conversion efficiency of 14.18% were observed. Under dark C-V condition, doping density (ND ) of 7.79×1014 cm−3 and a depletion width (W) of 1092 nm were achieved. 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Analysis of the electronic properties of all-electroplated ZnS, CdS and CdTe graded bandgap photovoltaic device configuration

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