Direct growth of special-shape graphene on different templates by remote catalyzation of Cu nanoparticles
A novel method avoiding the complex transfer process is proposed to directly grow low-defect and few-layer graphene on different insulating substrates (SiO2, Al2O3, etc.) by remote catalyzation of Cu nanoparticles (NPs) using ambient pressure chemical vapor deposition (APCVD). The insulating substra...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Han, Shuangshuang [verfasserIn] Yang, Fan [verfasserIn] Liu, Liyue [verfasserIn] Zhou, Mi [verfasserIn] Shan, Yongkui [verfasserIn] Li, Dezeng [verfasserIn] |
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| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2017 |
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| Schlagwörter: |
|---|
| Übergeordnetes Werk: |
Enthalten in: No title available - 33, Seite 800-806 |
|---|---|
| Übergeordnetes Werk: |
volume:33 ; pages:800-806 |
| DOI / URN: |
10.1016/j.jmst.2016.06.029 |
|---|
| Katalog-ID: |
ELV000582379 |
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| 245 | 1 | 0 | |a Direct growth of special-shape graphene on different templates by remote catalyzation of Cu nanoparticles |
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| 520 | |a A novel method avoiding the complex transfer process is proposed to directly grow low-defect and few-layer graphene on different insulating substrates (SiO2, Al2O3, etc.) by remote catalyzation of Cu nanoparticles (NPs) using ambient pressure chemical vapor deposition (APCVD). The insulating substrates with special structure are used as templates to grow wrapped graphene sheets with special shapes. Hollow graphene species are obtained by removing the substrates. The prime feature of the proposed method is using Cu NPs as catalyst rather than metal foils. The Cu NPs play an important role in the remote catalyzation during the nucleation of graphene. This method can improve the quality and relatively decrease the growth temperature of the graphene on the insulating substrates, which displays the great potential of APCVD direct growth of graphene on dielectric substrates for electronic and photovoltaic applications. | ||
| 650 | 4 | |a Graphene | |
| 650 | 4 | |a CVD | |
| 650 | 4 | |a Remote catalyzation | |
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| 650 | 4 | |a Cu nanoparticle | |
| 700 | 1 | |a Yang, Fan |e verfasserin |4 aut | |
| 700 | 1 | |a Liu, Liyue |e verfasserin |4 aut | |
| 700 | 1 | |a Zhou, Mi |e verfasserin |4 aut | |
| 700 | 1 | |a Shan, Yongkui |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Dezeng |e verfasserin |4 aut | |
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2017 |
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2017 |
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10.1016/j.jmst.2016.06.029 doi (DE-627)ELV000582379 (ELSEVIER)S1005-0302(17)30007-5 DE-627 ger DE-627 rda eng Han, Shuangshuang verfasserin aut Direct growth of special-shape graphene on different templates by remote catalyzation of Cu nanoparticles 2017 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A novel method avoiding the complex transfer process is proposed to directly grow low-defect and few-layer graphene on different insulating substrates (SiO2, Al2O3, etc.) by remote catalyzation of Cu nanoparticles (NPs) using ambient pressure chemical vapor deposition (APCVD). The insulating substrates with special structure are used as templates to grow wrapped graphene sheets with special shapes. Hollow graphene species are obtained by removing the substrates. The prime feature of the proposed method is using Cu NPs as catalyst rather than metal foils. The Cu NPs play an important role in the remote catalyzation during the nucleation of graphene. This method can improve the quality and relatively decrease the growth temperature of the graphene on the insulating substrates, which displays the great potential of APCVD direct growth of graphene on dielectric substrates for electronic and photovoltaic applications. Graphene CVD Remote catalyzation SiO Cu nanoparticle Yang, Fan verfasserin aut Liu, Liyue verfasserin aut Zhou, Mi verfasserin aut Shan, Yongkui verfasserin aut Li, Dezeng verfasserin aut Enthalten in No title available 33, Seite 800-806 (DE-627)569616417 1005-0302 nnns volume:33 pages:800-806 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4753 AR 33 800-806 |
| spelling |
10.1016/j.jmst.2016.06.029 doi (DE-627)ELV000582379 (ELSEVIER)S1005-0302(17)30007-5 DE-627 ger DE-627 rda eng Han, Shuangshuang verfasserin aut Direct growth of special-shape graphene on different templates by remote catalyzation of Cu nanoparticles 2017 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A novel method avoiding the complex transfer process is proposed to directly grow low-defect and few-layer graphene on different insulating substrates (SiO2, Al2O3, etc.) by remote catalyzation of Cu nanoparticles (NPs) using ambient pressure chemical vapor deposition (APCVD). The insulating substrates with special structure are used as templates to grow wrapped graphene sheets with special shapes. Hollow graphene species are obtained by removing the substrates. The prime feature of the proposed method is using Cu NPs as catalyst rather than metal foils. The Cu NPs play an important role in the remote catalyzation during the nucleation of graphene. This method can improve the quality and relatively decrease the growth temperature of the graphene on the insulating substrates, which displays the great potential of APCVD direct growth of graphene on dielectric substrates for electronic and photovoltaic applications. Graphene CVD Remote catalyzation SiO Cu nanoparticle Yang, Fan verfasserin aut Liu, Liyue verfasserin aut Zhou, Mi verfasserin aut Shan, Yongkui verfasserin aut Li, Dezeng verfasserin aut Enthalten in No title available 33, Seite 800-806 (DE-627)569616417 1005-0302 nnns volume:33 pages:800-806 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4753 AR 33 800-806 |
| allfields_unstemmed |
10.1016/j.jmst.2016.06.029 doi (DE-627)ELV000582379 (ELSEVIER)S1005-0302(17)30007-5 DE-627 ger DE-627 rda eng Han, Shuangshuang verfasserin aut Direct growth of special-shape graphene on different templates by remote catalyzation of Cu nanoparticles 2017 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A novel method avoiding the complex transfer process is proposed to directly grow low-defect and few-layer graphene on different insulating substrates (SiO2, Al2O3, etc.) by remote catalyzation of Cu nanoparticles (NPs) using ambient pressure chemical vapor deposition (APCVD). The insulating substrates with special structure are used as templates to grow wrapped graphene sheets with special shapes. Hollow graphene species are obtained by removing the substrates. The prime feature of the proposed method is using Cu NPs as catalyst rather than metal foils. The Cu NPs play an important role in the remote catalyzation during the nucleation of graphene. This method can improve the quality and relatively decrease the growth temperature of the graphene on the insulating substrates, which displays the great potential of APCVD direct growth of graphene on dielectric substrates for electronic and photovoltaic applications. Graphene CVD Remote catalyzation SiO Cu nanoparticle Yang, Fan verfasserin aut Liu, Liyue verfasserin aut Zhou, Mi verfasserin aut Shan, Yongkui verfasserin aut Li, Dezeng verfasserin aut Enthalten in No title available 33, Seite 800-806 (DE-627)569616417 1005-0302 nnns volume:33 pages:800-806 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4753 AR 33 800-806 |
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10.1016/j.jmst.2016.06.029 doi (DE-627)ELV000582379 (ELSEVIER)S1005-0302(17)30007-5 DE-627 ger DE-627 rda eng Han, Shuangshuang verfasserin aut Direct growth of special-shape graphene on different templates by remote catalyzation of Cu nanoparticles 2017 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A novel method avoiding the complex transfer process is proposed to directly grow low-defect and few-layer graphene on different insulating substrates (SiO2, Al2O3, etc.) by remote catalyzation of Cu nanoparticles (NPs) using ambient pressure chemical vapor deposition (APCVD). The insulating substrates with special structure are used as templates to grow wrapped graphene sheets with special shapes. Hollow graphene species are obtained by removing the substrates. The prime feature of the proposed method is using Cu NPs as catalyst rather than metal foils. The Cu NPs play an important role in the remote catalyzation during the nucleation of graphene. This method can improve the quality and relatively decrease the growth temperature of the graphene on the insulating substrates, which displays the great potential of APCVD direct growth of graphene on dielectric substrates for electronic and photovoltaic applications. Graphene CVD Remote catalyzation SiO Cu nanoparticle Yang, Fan verfasserin aut Liu, Liyue verfasserin aut Zhou, Mi verfasserin aut Shan, Yongkui verfasserin aut Li, Dezeng verfasserin aut Enthalten in No title available 33, Seite 800-806 (DE-627)569616417 1005-0302 nnns volume:33 pages:800-806 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4753 AR 33 800-806 |
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10.1016/j.jmst.2016.06.029 doi (DE-627)ELV000582379 (ELSEVIER)S1005-0302(17)30007-5 DE-627 ger DE-627 rda eng Han, Shuangshuang verfasserin aut Direct growth of special-shape graphene on different templates by remote catalyzation of Cu nanoparticles 2017 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A novel method avoiding the complex transfer process is proposed to directly grow low-defect and few-layer graphene on different insulating substrates (SiO2, Al2O3, etc.) by remote catalyzation of Cu nanoparticles (NPs) using ambient pressure chemical vapor deposition (APCVD). The insulating substrates with special structure are used as templates to grow wrapped graphene sheets with special shapes. Hollow graphene species are obtained by removing the substrates. The prime feature of the proposed method is using Cu NPs as catalyst rather than metal foils. The Cu NPs play an important role in the remote catalyzation during the nucleation of graphene. This method can improve the quality and relatively decrease the growth temperature of the graphene on the insulating substrates, which displays the great potential of APCVD direct growth of graphene on dielectric substrates for electronic and photovoltaic applications. Graphene CVD Remote catalyzation SiO Cu nanoparticle Yang, Fan verfasserin aut Liu, Liyue verfasserin aut Zhou, Mi verfasserin aut Shan, Yongkui verfasserin aut Li, Dezeng verfasserin aut Enthalten in No title available 33, Seite 800-806 (DE-627)569616417 1005-0302 nnns volume:33 pages:800-806 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4753 AR 33 800-806 |
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Han, Shuangshuang @@aut@@ Yang, Fan @@aut@@ Liu, Liyue @@aut@@ Zhou, Mi @@aut@@ Shan, Yongkui @@aut@@ Li, Dezeng @@aut@@ |
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Han, Shuangshuang |
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Han, Shuangshuang misc Graphene misc CVD misc Remote catalyzation misc SiO misc Cu nanoparticle Direct growth of special-shape graphene on different templates by remote catalyzation of Cu nanoparticles |
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Direct growth of special-shape graphene on different templates by remote catalyzation of Cu nanoparticles Graphene CVD Remote catalyzation SiO Cu nanoparticle |
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direct growth of special-shape graphene on different templates by remote catalyzation of cu nanoparticles |
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Direct growth of special-shape graphene on different templates by remote catalyzation of Cu nanoparticles |
| abstract |
A novel method avoiding the complex transfer process is proposed to directly grow low-defect and few-layer graphene on different insulating substrates (SiO2, Al2O3, etc.) by remote catalyzation of Cu nanoparticles (NPs) using ambient pressure chemical vapor deposition (APCVD). The insulating substrates with special structure are used as templates to grow wrapped graphene sheets with special shapes. Hollow graphene species are obtained by removing the substrates. The prime feature of the proposed method is using Cu NPs as catalyst rather than metal foils. The Cu NPs play an important role in the remote catalyzation during the nucleation of graphene. This method can improve the quality and relatively decrease the growth temperature of the graphene on the insulating substrates, which displays the great potential of APCVD direct growth of graphene on dielectric substrates for electronic and photovoltaic applications. |
| abstractGer |
A novel method avoiding the complex transfer process is proposed to directly grow low-defect and few-layer graphene on different insulating substrates (SiO2, Al2O3, etc.) by remote catalyzation of Cu nanoparticles (NPs) using ambient pressure chemical vapor deposition (APCVD). The insulating substrates with special structure are used as templates to grow wrapped graphene sheets with special shapes. Hollow graphene species are obtained by removing the substrates. The prime feature of the proposed method is using Cu NPs as catalyst rather than metal foils. The Cu NPs play an important role in the remote catalyzation during the nucleation of graphene. This method can improve the quality and relatively decrease the growth temperature of the graphene on the insulating substrates, which displays the great potential of APCVD direct growth of graphene on dielectric substrates for electronic and photovoltaic applications. |
| abstract_unstemmed |
A novel method avoiding the complex transfer process is proposed to directly grow low-defect and few-layer graphene on different insulating substrates (SiO2, Al2O3, etc.) by remote catalyzation of Cu nanoparticles (NPs) using ambient pressure chemical vapor deposition (APCVD). The insulating substrates with special structure are used as templates to grow wrapped graphene sheets with special shapes. Hollow graphene species are obtained by removing the substrates. The prime feature of the proposed method is using Cu NPs as catalyst rather than metal foils. The Cu NPs play an important role in the remote catalyzation during the nucleation of graphene. This method can improve the quality and relatively decrease the growth temperature of the graphene on the insulating substrates, which displays the great potential of APCVD direct growth of graphene on dielectric substrates for electronic and photovoltaic applications. |
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Direct growth of special-shape graphene on different templates by remote catalyzation of Cu nanoparticles |
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