Infrared and Raman spectroscopy study of As
AsS chalcogenide films, where As content is 60–40at.%, have been prepared via a RF non-equilibrium low-temperature argon plasma discharge, using volatile As and S as the precursors. Optical properties of the films were studied in UV–visible-NIR region in the range from 0.2 to 2.5μm. Infrared and Ram...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Mochalov, Leonid [verfasserIn] Dorosz, Dominik [verfasserIn] Kudryashov, Mikhail [verfasserIn] Nezhdanov, Aleksey [verfasserIn] Usanov, Dmitry [verfasserIn] Gogova, Daniela [verfasserIn] Zelentsov, Sergey [verfasserIn] Boryakov, Aleksey [verfasserIn] Mashin, Alexandr [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2017 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Spectrochimica acta / A - Amsterdam [u.a.] : Elsevier Science, 1967, 193, Seite 258-263 |
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| Übergeordnetes Werk: |
volume:193 ; pages:258-263 |
| DOI / URN: |
10.1016/j.saa.2017.12.034 |
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| Katalog-ID: |
ELV000828939 |
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| 245 | 1 | 0 | |a Infrared and Raman spectroscopy study of As |
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| 520 | |a AsS chalcogenide films, where As content is 60–40at.%, have been prepared via a RF non-equilibrium low-temperature argon plasma discharge, using volatile As and S as the precursors. Optical properties of the films were studied in UV–visible-NIR region in the range from 0.2 to 2.5μm. Infrared and Raman spectroscopy have been employed for the elucidation of the molecular structure of the newly developed material. It was established that PECVD films possess a higher degree of transparency (up to 80%) and a wider transparency window (>20μm) in comparison with the “usual” AsS thin films, prepared by different thermal methods, which is highly advantageous for certain applications. | ||
| 650 | 4 | |a As | |
| 650 | 4 | |a Optical properties | |
| 650 | 4 | |a Structural properties | |
| 700 | 1 | |a Dorosz, Dominik |e verfasserin |4 aut | |
| 700 | 1 | |a Kudryashov, Mikhail |e verfasserin |4 aut | |
| 700 | 1 | |a Nezhdanov, Aleksey |e verfasserin |0 (orcid)0000-0002-7484-106X |4 aut | |
| 700 | 1 | |a Usanov, Dmitry |e verfasserin |4 aut | |
| 700 | 1 | |a Gogova, Daniela |e verfasserin |4 aut | |
| 700 | 1 | |a Zelentsov, Sergey |e verfasserin |4 aut | |
| 700 | 1 | |a Boryakov, Aleksey |e verfasserin |4 aut | |
| 700 | 1 | |a Mashin, Alexandr |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Spectrochimica acta / A |d Amsterdam [u.a.] : Elsevier Science, 1967 |g 193, Seite 258-263 |h Online-Ressource |w (DE-627)320570983 |w (DE-600)2016492-0 |w (DE-576)090956206 |x 1873-3557 |7 nnns |
| 773 | 1 | 8 | |g volume:193 |g pages:258-263 |
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10.1016/j.saa.2017.12.034 doi (DE-627)ELV000828939 (ELSEVIER)S1386-1425(17)31009-0 DE-627 ger DE-627 rda eng 540 530 DE-600 35.00 bkl Mochalov, Leonid verfasserin (orcid)0000-0002-7842-8563 aut Infrared and Raman spectroscopy study of As 2017 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier AsS chalcogenide films, where As content is 60–40at.%, have been prepared via a RF non-equilibrium low-temperature argon plasma discharge, using volatile As and S as the precursors. Optical properties of the films were studied in UV–visible-NIR region in the range from 0.2 to 2.5μm. Infrared and Raman spectroscopy have been employed for the elucidation of the molecular structure of the newly developed material. It was established that PECVD films possess a higher degree of transparency (up to 80%) and a wider transparency window (>20μm) in comparison with the “usual” AsS thin films, prepared by different thermal methods, which is highly advantageous for certain applications. As Optical properties Structural properties Dorosz, Dominik verfasserin aut Kudryashov, Mikhail verfasserin aut Nezhdanov, Aleksey verfasserin (orcid)0000-0002-7484-106X aut Usanov, Dmitry verfasserin aut Gogova, Daniela verfasserin aut Zelentsov, Sergey verfasserin aut Boryakov, Aleksey verfasserin aut Mashin, Alexandr verfasserin aut Enthalten in Spectrochimica acta / A Amsterdam [u.a.] : Elsevier Science, 1967 193, Seite 258-263 Online-Ressource (DE-627)320570983 (DE-600)2016492-0 (DE-576)090956206 1873-3557 nnns volume:193 pages:258-263 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2098 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 35.00 Chemie: Allgemeines AR 193 258-263 |
| spelling |
10.1016/j.saa.2017.12.034 doi (DE-627)ELV000828939 (ELSEVIER)S1386-1425(17)31009-0 DE-627 ger DE-627 rda eng 540 530 DE-600 35.00 bkl Mochalov, Leonid verfasserin (orcid)0000-0002-7842-8563 aut Infrared and Raman spectroscopy study of As 2017 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier AsS chalcogenide films, where As content is 60–40at.%, have been prepared via a RF non-equilibrium low-temperature argon plasma discharge, using volatile As and S as the precursors. Optical properties of the films were studied in UV–visible-NIR region in the range from 0.2 to 2.5μm. Infrared and Raman spectroscopy have been employed for the elucidation of the molecular structure of the newly developed material. It was established that PECVD films possess a higher degree of transparency (up to 80%) and a wider transparency window (>20μm) in comparison with the “usual” AsS thin films, prepared by different thermal methods, which is highly advantageous for certain applications. As Optical properties Structural properties Dorosz, Dominik verfasserin aut Kudryashov, Mikhail verfasserin aut Nezhdanov, Aleksey verfasserin (orcid)0000-0002-7484-106X aut Usanov, Dmitry verfasserin aut Gogova, Daniela verfasserin aut Zelentsov, Sergey verfasserin aut Boryakov, Aleksey verfasserin aut Mashin, Alexandr verfasserin aut Enthalten in Spectrochimica acta / A Amsterdam [u.a.] : Elsevier Science, 1967 193, Seite 258-263 Online-Ressource (DE-627)320570983 (DE-600)2016492-0 (DE-576)090956206 1873-3557 nnns volume:193 pages:258-263 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2098 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 35.00 Chemie: Allgemeines AR 193 258-263 |
| allfields_unstemmed |
10.1016/j.saa.2017.12.034 doi (DE-627)ELV000828939 (ELSEVIER)S1386-1425(17)31009-0 DE-627 ger DE-627 rda eng 540 530 DE-600 35.00 bkl Mochalov, Leonid verfasserin (orcid)0000-0002-7842-8563 aut Infrared and Raman spectroscopy study of As 2017 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier AsS chalcogenide films, where As content is 60–40at.%, have been prepared via a RF non-equilibrium low-temperature argon plasma discharge, using volatile As and S as the precursors. Optical properties of the films were studied in UV–visible-NIR region in the range from 0.2 to 2.5μm. Infrared and Raman spectroscopy have been employed for the elucidation of the molecular structure of the newly developed material. It was established that PECVD films possess a higher degree of transparency (up to 80%) and a wider transparency window (>20μm) in comparison with the “usual” AsS thin films, prepared by different thermal methods, which is highly advantageous for certain applications. As Optical properties Structural properties Dorosz, Dominik verfasserin aut Kudryashov, Mikhail verfasserin aut Nezhdanov, Aleksey verfasserin (orcid)0000-0002-7484-106X aut Usanov, Dmitry verfasserin aut Gogova, Daniela verfasserin aut Zelentsov, Sergey verfasserin aut Boryakov, Aleksey verfasserin aut Mashin, Alexandr verfasserin aut Enthalten in Spectrochimica acta / A Amsterdam [u.a.] : Elsevier Science, 1967 193, Seite 258-263 Online-Ressource (DE-627)320570983 (DE-600)2016492-0 (DE-576)090956206 1873-3557 nnns volume:193 pages:258-263 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2098 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 35.00 Chemie: Allgemeines AR 193 258-263 |
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10.1016/j.saa.2017.12.034 doi (DE-627)ELV000828939 (ELSEVIER)S1386-1425(17)31009-0 DE-627 ger DE-627 rda eng 540 530 DE-600 35.00 bkl Mochalov, Leonid verfasserin (orcid)0000-0002-7842-8563 aut Infrared and Raman spectroscopy study of As 2017 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier AsS chalcogenide films, where As content is 60–40at.%, have been prepared via a RF non-equilibrium low-temperature argon plasma discharge, using volatile As and S as the precursors. Optical properties of the films were studied in UV–visible-NIR region in the range from 0.2 to 2.5μm. Infrared and Raman spectroscopy have been employed for the elucidation of the molecular structure of the newly developed material. It was established that PECVD films possess a higher degree of transparency (up to 80%) and a wider transparency window (>20μm) in comparison with the “usual” AsS thin films, prepared by different thermal methods, which is highly advantageous for certain applications. As Optical properties Structural properties Dorosz, Dominik verfasserin aut Kudryashov, Mikhail verfasserin aut Nezhdanov, Aleksey verfasserin (orcid)0000-0002-7484-106X aut Usanov, Dmitry verfasserin aut Gogova, Daniela verfasserin aut Zelentsov, Sergey verfasserin aut Boryakov, Aleksey verfasserin aut Mashin, Alexandr verfasserin aut Enthalten in Spectrochimica acta / A Amsterdam [u.a.] : Elsevier Science, 1967 193, Seite 258-263 Online-Ressource (DE-627)320570983 (DE-600)2016492-0 (DE-576)090956206 1873-3557 nnns volume:193 pages:258-263 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2098 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 35.00 Chemie: Allgemeines AR 193 258-263 |
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10.1016/j.saa.2017.12.034 doi (DE-627)ELV000828939 (ELSEVIER)S1386-1425(17)31009-0 DE-627 ger DE-627 rda eng 540 530 DE-600 35.00 bkl Mochalov, Leonid verfasserin (orcid)0000-0002-7842-8563 aut Infrared and Raman spectroscopy study of As 2017 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier AsS chalcogenide films, where As content is 60–40at.%, have been prepared via a RF non-equilibrium low-temperature argon plasma discharge, using volatile As and S as the precursors. Optical properties of the films were studied in UV–visible-NIR region in the range from 0.2 to 2.5μm. Infrared and Raman spectroscopy have been employed for the elucidation of the molecular structure of the newly developed material. It was established that PECVD films possess a higher degree of transparency (up to 80%) and a wider transparency window (>20μm) in comparison with the “usual” AsS thin films, prepared by different thermal methods, which is highly advantageous for certain applications. As Optical properties Structural properties Dorosz, Dominik verfasserin aut Kudryashov, Mikhail verfasserin aut Nezhdanov, Aleksey verfasserin (orcid)0000-0002-7484-106X aut Usanov, Dmitry verfasserin aut Gogova, Daniela verfasserin aut Zelentsov, Sergey verfasserin aut Boryakov, Aleksey verfasserin aut Mashin, Alexandr verfasserin aut Enthalten in Spectrochimica acta / A Amsterdam [u.a.] : Elsevier Science, 1967 193, Seite 258-263 Online-Ressource (DE-627)320570983 (DE-600)2016492-0 (DE-576)090956206 1873-3557 nnns volume:193 pages:258-263 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2098 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 35.00 Chemie: Allgemeines AR 193 258-263 |
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Mochalov, Leonid @@aut@@ Dorosz, Dominik @@aut@@ Kudryashov, Mikhail @@aut@@ Nezhdanov, Aleksey @@aut@@ Usanov, Dmitry @@aut@@ Gogova, Daniela @@aut@@ Zelentsov, Sergey @@aut@@ Boryakov, Aleksey @@aut@@ Mashin, Alexandr @@aut@@ |
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2017-01-01T00:00:00Z |
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540 530 DE-600 35.00 bkl Infrared and Raman spectroscopy study of As As Optical properties Structural properties |
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Mochalov, Leonid Dorosz, Dominik Kudryashov, Mikhail Nezhdanov, Aleksey Usanov, Dmitry Gogova, Daniela Zelentsov, Sergey Boryakov, Aleksey Mashin, Alexandr |
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infrared and raman spectroscopy study of as |
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Infrared and Raman spectroscopy study of As |
| abstract |
AsS chalcogenide films, where As content is 60–40at.%, have been prepared via a RF non-equilibrium low-temperature argon plasma discharge, using volatile As and S as the precursors. Optical properties of the films were studied in UV–visible-NIR region in the range from 0.2 to 2.5μm. Infrared and Raman spectroscopy have been employed for the elucidation of the molecular structure of the newly developed material. It was established that PECVD films possess a higher degree of transparency (up to 80%) and a wider transparency window (>20μm) in comparison with the “usual” AsS thin films, prepared by different thermal methods, which is highly advantageous for certain applications. |
| abstractGer |
AsS chalcogenide films, where As content is 60–40at.%, have been prepared via a RF non-equilibrium low-temperature argon plasma discharge, using volatile As and S as the precursors. Optical properties of the films were studied in UV–visible-NIR region in the range from 0.2 to 2.5μm. Infrared and Raman spectroscopy have been employed for the elucidation of the molecular structure of the newly developed material. It was established that PECVD films possess a higher degree of transparency (up to 80%) and a wider transparency window (>20μm) in comparison with the “usual” AsS thin films, prepared by different thermal methods, which is highly advantageous for certain applications. |
| abstract_unstemmed |
AsS chalcogenide films, where As content is 60–40at.%, have been prepared via a RF non-equilibrium low-temperature argon plasma discharge, using volatile As and S as the precursors. Optical properties of the films were studied in UV–visible-NIR region in the range from 0.2 to 2.5μm. Infrared and Raman spectroscopy have been employed for the elucidation of the molecular structure of the newly developed material. It was established that PECVD films possess a higher degree of transparency (up to 80%) and a wider transparency window (>20μm) in comparison with the “usual” AsS thin films, prepared by different thermal methods, which is highly advantageous for certain applications. |
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| score |
7.399208 |