Resistive switching characteristics of AgInZnS nanoparticles
Resistive random access memory has emerged as a promising next-generation non-volatile memory. AgInZnS (AIZS) semiconductor nanoparticles are demonstrated due to their large abundance, non-toxicity and the simplicity of synthesis. Herein, AIZS nanoparticles are synthesized as the switching layer in...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Zhou, Dan [verfasserIn] Chen, Fenggui [verfasserIn] Han, Shuai [verfasserIn] Hu, Wei [verfasserIn] Zang, Zhigang [verfasserIn] Hu, Zhiping [verfasserIn] Li, Shiqi [verfasserIn] Tang, Xiaosheng [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2018 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Ceramics international - Amsterdam [u.a.] : Elsevier Science, 1995, 44, Seite S152-S155 |
|---|---|
| Übergeordnetes Werk: |
volume:44 ; pages:S152-S155 |
| DOI / URN: |
10.1016/j.ceramint.2018.08.126 |
|---|
| Katalog-ID: |
ELV001095676 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | ELV001095676 | ||
| 003 | DE-627 | ||
| 005 | 20230524125948.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 230428s2018 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1016/j.ceramint.2018.08.126 |2 doi | |
| 035 | |a (DE-627)ELV001095676 | ||
| 035 | |a (ELSEVIER)S0272-8842(18)32186-2 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rda | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 670 |q DE-600 |
| 084 | |a 51.60 |2 bkl | ||
| 084 | |a 58.45 |2 bkl | ||
| 100 | 1 | |a Zhou, Dan |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Resistive switching characteristics of AgInZnS nanoparticles |
| 264 | 1 | |c 2018 | |
| 336 | |a nicht spezifiziert |b zzz |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 520 | |a Resistive random access memory has emerged as a promising next-generation non-volatile memory. AgInZnS (AIZS) semiconductor nanoparticles are demonstrated due to their large abundance, non-toxicity and the simplicity of synthesis. Herein, AIZS nanoparticles are synthesized as the switching layer in the sandwich structure of Al/AIZS/ITO via a hot-injection method and show excellent optical and electronic properties. By means of the electrical characterization, the memory device shows bipolar resistive switching behavior and exhibits the ON/OFF current ratio of about 18 with the good endurance performance over 75 cycles. This study reveals that the obtained AIZS nanoparticles have a great potential to be used in non-volatile resistive switching memory application. | ||
| 650 | 4 | |a Resistive random access memory | |
| 650 | 4 | |a AgInZnS | |
| 650 | 4 | |a Semiconductor nanoparticles | |
| 650 | 4 | |a Resistive switching | |
| 700 | 1 | |a Chen, Fenggui |e verfasserin |4 aut | |
| 700 | 1 | |a Han, Shuai |e verfasserin |4 aut | |
| 700 | 1 | |a Hu, Wei |e verfasserin |4 aut | |
| 700 | 1 | |a Zang, Zhigang |e verfasserin |4 aut | |
| 700 | 1 | |a Hu, Zhiping |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Shiqi |e verfasserin |4 aut | |
| 700 | 1 | |a Tang, Xiaosheng |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Ceramics international |d Amsterdam [u.a.] : Elsevier Science, 1995 |g 44, Seite S152-S155 |h Online-Ressource |w (DE-627)320584305 |w (DE-600)2018052-4 |w (DE-576)25523063X |x 0272-8842 |7 nnns |
| 773 | 1 | 8 | |g volume:44 |g pages:S152-S155 |
| 912 | |a GBV_USEFLAG_U | ||
| 912 | |a SYSFLAG_U | ||
| 912 | |a GBV_ELV | ||
| 912 | |a GBV_ILN_20 | ||
| 912 | |a GBV_ILN_22 | ||
| 912 | |a GBV_ILN_23 | ||
| 912 | |a GBV_ILN_24 | ||
| 912 | |a GBV_ILN_31 | ||
| 912 | |a GBV_ILN_32 | ||
| 912 | |a GBV_ILN_40 | ||
| 912 | |a GBV_ILN_60 | ||
| 912 | |a GBV_ILN_62 | ||
| 912 | |a GBV_ILN_63 | ||
| 912 | |a GBV_ILN_69 | ||
| 912 | |a GBV_ILN_70 | ||
| 912 | |a GBV_ILN_73 | ||
| 912 | |a GBV_ILN_74 | ||
| 912 | |a GBV_ILN_90 | ||
| 912 | |a GBV_ILN_95 | ||
| 912 | |a GBV_ILN_100 | ||
| 912 | |a GBV_ILN_105 | ||
| 912 | |a GBV_ILN_110 | ||
| 912 | |a GBV_ILN_150 | ||
| 912 | |a GBV_ILN_151 | ||
| 912 | |a GBV_ILN_224 | ||
| 912 | |a GBV_ILN_370 | ||
| 912 | |a GBV_ILN_602 | ||
| 912 | |a GBV_ILN_702 | ||
| 912 | |a GBV_ILN_2003 | ||
| 912 | |a GBV_ILN_2004 | ||
| 912 | |a GBV_ILN_2005 | ||
| 912 | |a GBV_ILN_2006 | ||
| 912 | |a GBV_ILN_2008 | ||
| 912 | |a GBV_ILN_2011 | ||
| 912 | |a GBV_ILN_2014 | ||
| 912 | |a GBV_ILN_2015 | ||
| 912 | |a GBV_ILN_2020 | ||
| 912 | |a GBV_ILN_2021 | ||
| 912 | |a GBV_ILN_2025 | ||
| 912 | |a GBV_ILN_2027 | ||
| 912 | |a GBV_ILN_2034 | ||
| 912 | |a GBV_ILN_2038 | ||
| 912 | |a GBV_ILN_2044 | ||
| 912 | |a GBV_ILN_2048 | ||
| 912 | |a GBV_ILN_2049 | ||
| 912 | |a GBV_ILN_2050 | ||
| 912 | |a GBV_ILN_2056 | ||
| 912 | |a GBV_ILN_2059 | ||
| 912 | |a GBV_ILN_2061 | ||
| 912 | |a GBV_ILN_2064 | ||
| 912 | |a GBV_ILN_2065 | ||
| 912 | |a GBV_ILN_2068 | ||
| 912 | |a GBV_ILN_2088 | ||
| 912 | |a GBV_ILN_2111 | ||
| 912 | |a GBV_ILN_2112 | ||
| 912 | |a GBV_ILN_2113 | ||
| 912 | |a GBV_ILN_2118 | ||
| 912 | |a GBV_ILN_2122 | ||
| 912 | |a GBV_ILN_2129 | ||
| 912 | |a GBV_ILN_2143 | ||
| 912 | |a GBV_ILN_2147 | ||
| 912 | |a GBV_ILN_2148 | ||
| 912 | |a GBV_ILN_2152 | ||
| 912 | |a GBV_ILN_2153 | ||
| 912 | |a GBV_ILN_2190 | ||
| 912 | |a GBV_ILN_2336 | ||
| 912 | |a GBV_ILN_2470 | ||
| 912 | |a GBV_ILN_2507 | ||
| 912 | |a GBV_ILN_2522 | ||
| 912 | |a GBV_ILN_4035 | ||
| 912 | |a GBV_ILN_4037 | ||
| 912 | |a GBV_ILN_4046 | ||
| 912 | |a GBV_ILN_4112 | ||
| 912 | |a GBV_ILN_4125 | ||
| 912 | |a GBV_ILN_4126 | ||
| 912 | |a GBV_ILN_4242 | ||
| 912 | |a GBV_ILN_4251 | ||
| 912 | |a GBV_ILN_4305 | ||
| 912 | |a GBV_ILN_4313 | ||
| 912 | |a GBV_ILN_4322 | ||
| 912 | |a GBV_ILN_4323 | ||
| 912 | |a GBV_ILN_4324 | ||
| 912 | |a GBV_ILN_4325 | ||
| 912 | |a GBV_ILN_4326 | ||
| 912 | |a GBV_ILN_4333 | ||
| 912 | |a GBV_ILN_4334 | ||
| 912 | |a GBV_ILN_4335 | ||
| 912 | |a GBV_ILN_4338 | ||
| 912 | |a GBV_ILN_4393 | ||
| 936 | b | k | |a 51.60 |j Keramische Werkstoffe |j Hartstoffe |x Werkstoffkunde |
| 936 | b | k | |a 58.45 |j Gesteinshüttenkunde |
| 951 | |a AR | ||
| 952 | |d 44 |h S152-S155 | ||
| author_variant |
d z dz f c fc s h sh w h wh z z zz z h zh s l sl x t xt |
|---|---|
| matchkey_str |
article:02728842:2018----::eitvsicighrceitcoai |
| hierarchy_sort_str |
2018 |
| bklnumber |
51.60 58.45 |
| publishDate |
2018 |
| allfields |
10.1016/j.ceramint.2018.08.126 doi (DE-627)ELV001095676 (ELSEVIER)S0272-8842(18)32186-2 DE-627 ger DE-627 rda eng 670 DE-600 51.60 bkl 58.45 bkl Zhou, Dan verfasserin aut Resistive switching characteristics of AgInZnS nanoparticles 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Resistive random access memory has emerged as a promising next-generation non-volatile memory. AgInZnS (AIZS) semiconductor nanoparticles are demonstrated due to their large abundance, non-toxicity and the simplicity of synthesis. Herein, AIZS nanoparticles are synthesized as the switching layer in the sandwich structure of Al/AIZS/ITO via a hot-injection method and show excellent optical and electronic properties. By means of the electrical characterization, the memory device shows bipolar resistive switching behavior and exhibits the ON/OFF current ratio of about 18 with the good endurance performance over 75 cycles. This study reveals that the obtained AIZS nanoparticles have a great potential to be used in non-volatile resistive switching memory application. Resistive random access memory AgInZnS Semiconductor nanoparticles Resistive switching Chen, Fenggui verfasserin aut Han, Shuai verfasserin aut Hu, Wei verfasserin aut Zang, Zhigang verfasserin aut Hu, Zhiping verfasserin aut Li, Shiqi verfasserin aut Tang, Xiaosheng verfasserin aut Enthalten in Ceramics international Amsterdam [u.a.] : Elsevier Science, 1995 44, Seite S152-S155 Online-Ressource (DE-627)320584305 (DE-600)2018052-4 (DE-576)25523063X 0272-8842 nnns volume:44 pages:S152-S155 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde 58.45 Gesteinshüttenkunde AR 44 S152-S155 |
| spelling |
10.1016/j.ceramint.2018.08.126 doi (DE-627)ELV001095676 (ELSEVIER)S0272-8842(18)32186-2 DE-627 ger DE-627 rda eng 670 DE-600 51.60 bkl 58.45 bkl Zhou, Dan verfasserin aut Resistive switching characteristics of AgInZnS nanoparticles 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Resistive random access memory has emerged as a promising next-generation non-volatile memory. AgInZnS (AIZS) semiconductor nanoparticles are demonstrated due to their large abundance, non-toxicity and the simplicity of synthesis. Herein, AIZS nanoparticles are synthesized as the switching layer in the sandwich structure of Al/AIZS/ITO via a hot-injection method and show excellent optical and electronic properties. By means of the electrical characterization, the memory device shows bipolar resistive switching behavior and exhibits the ON/OFF current ratio of about 18 with the good endurance performance over 75 cycles. This study reveals that the obtained AIZS nanoparticles have a great potential to be used in non-volatile resistive switching memory application. Resistive random access memory AgInZnS Semiconductor nanoparticles Resistive switching Chen, Fenggui verfasserin aut Han, Shuai verfasserin aut Hu, Wei verfasserin aut Zang, Zhigang verfasserin aut Hu, Zhiping verfasserin aut Li, Shiqi verfasserin aut Tang, Xiaosheng verfasserin aut Enthalten in Ceramics international Amsterdam [u.a.] : Elsevier Science, 1995 44, Seite S152-S155 Online-Ressource (DE-627)320584305 (DE-600)2018052-4 (DE-576)25523063X 0272-8842 nnns volume:44 pages:S152-S155 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde 58.45 Gesteinshüttenkunde AR 44 S152-S155 |
| allfields_unstemmed |
10.1016/j.ceramint.2018.08.126 doi (DE-627)ELV001095676 (ELSEVIER)S0272-8842(18)32186-2 DE-627 ger DE-627 rda eng 670 DE-600 51.60 bkl 58.45 bkl Zhou, Dan verfasserin aut Resistive switching characteristics of AgInZnS nanoparticles 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Resistive random access memory has emerged as a promising next-generation non-volatile memory. AgInZnS (AIZS) semiconductor nanoparticles are demonstrated due to their large abundance, non-toxicity and the simplicity of synthesis. Herein, AIZS nanoparticles are synthesized as the switching layer in the sandwich structure of Al/AIZS/ITO via a hot-injection method and show excellent optical and electronic properties. By means of the electrical characterization, the memory device shows bipolar resistive switching behavior and exhibits the ON/OFF current ratio of about 18 with the good endurance performance over 75 cycles. This study reveals that the obtained AIZS nanoparticles have a great potential to be used in non-volatile resistive switching memory application. Resistive random access memory AgInZnS Semiconductor nanoparticles Resistive switching Chen, Fenggui verfasserin aut Han, Shuai verfasserin aut Hu, Wei verfasserin aut Zang, Zhigang verfasserin aut Hu, Zhiping verfasserin aut Li, Shiqi verfasserin aut Tang, Xiaosheng verfasserin aut Enthalten in Ceramics international Amsterdam [u.a.] : Elsevier Science, 1995 44, Seite S152-S155 Online-Ressource (DE-627)320584305 (DE-600)2018052-4 (DE-576)25523063X 0272-8842 nnns volume:44 pages:S152-S155 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde 58.45 Gesteinshüttenkunde AR 44 S152-S155 |
| allfieldsGer |
10.1016/j.ceramint.2018.08.126 doi (DE-627)ELV001095676 (ELSEVIER)S0272-8842(18)32186-2 DE-627 ger DE-627 rda eng 670 DE-600 51.60 bkl 58.45 bkl Zhou, Dan verfasserin aut Resistive switching characteristics of AgInZnS nanoparticles 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Resistive random access memory has emerged as a promising next-generation non-volatile memory. AgInZnS (AIZS) semiconductor nanoparticles are demonstrated due to their large abundance, non-toxicity and the simplicity of synthesis. Herein, AIZS nanoparticles are synthesized as the switching layer in the sandwich structure of Al/AIZS/ITO via a hot-injection method and show excellent optical and electronic properties. By means of the electrical characterization, the memory device shows bipolar resistive switching behavior and exhibits the ON/OFF current ratio of about 18 with the good endurance performance over 75 cycles. This study reveals that the obtained AIZS nanoparticles have a great potential to be used in non-volatile resistive switching memory application. Resistive random access memory AgInZnS Semiconductor nanoparticles Resistive switching Chen, Fenggui verfasserin aut Han, Shuai verfasserin aut Hu, Wei verfasserin aut Zang, Zhigang verfasserin aut Hu, Zhiping verfasserin aut Li, Shiqi verfasserin aut Tang, Xiaosheng verfasserin aut Enthalten in Ceramics international Amsterdam [u.a.] : Elsevier Science, 1995 44, Seite S152-S155 Online-Ressource (DE-627)320584305 (DE-600)2018052-4 (DE-576)25523063X 0272-8842 nnns volume:44 pages:S152-S155 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde 58.45 Gesteinshüttenkunde AR 44 S152-S155 |
| allfieldsSound |
10.1016/j.ceramint.2018.08.126 doi (DE-627)ELV001095676 (ELSEVIER)S0272-8842(18)32186-2 DE-627 ger DE-627 rda eng 670 DE-600 51.60 bkl 58.45 bkl Zhou, Dan verfasserin aut Resistive switching characteristics of AgInZnS nanoparticles 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Resistive random access memory has emerged as a promising next-generation non-volatile memory. AgInZnS (AIZS) semiconductor nanoparticles are demonstrated due to their large abundance, non-toxicity and the simplicity of synthesis. Herein, AIZS nanoparticles are synthesized as the switching layer in the sandwich structure of Al/AIZS/ITO via a hot-injection method and show excellent optical and electronic properties. By means of the electrical characterization, the memory device shows bipolar resistive switching behavior and exhibits the ON/OFF current ratio of about 18 with the good endurance performance over 75 cycles. This study reveals that the obtained AIZS nanoparticles have a great potential to be used in non-volatile resistive switching memory application. Resistive random access memory AgInZnS Semiconductor nanoparticles Resistive switching Chen, Fenggui verfasserin aut Han, Shuai verfasserin aut Hu, Wei verfasserin aut Zang, Zhigang verfasserin aut Hu, Zhiping verfasserin aut Li, Shiqi verfasserin aut Tang, Xiaosheng verfasserin aut Enthalten in Ceramics international Amsterdam [u.a.] : Elsevier Science, 1995 44, Seite S152-S155 Online-Ressource (DE-627)320584305 (DE-600)2018052-4 (DE-576)25523063X 0272-8842 nnns volume:44 pages:S152-S155 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde 58.45 Gesteinshüttenkunde AR 44 S152-S155 |
| language |
English |
| source |
Enthalten in Ceramics international 44, Seite S152-S155 volume:44 pages:S152-S155 |
| sourceStr |
Enthalten in Ceramics international 44, Seite S152-S155 volume:44 pages:S152-S155 |
| format_phy_str_mv |
Article |
| bklname |
Keramische Werkstoffe Hartstoffe Gesteinshüttenkunde |
| institution |
findex.gbv.de |
| topic_facet |
Resistive random access memory AgInZnS Semiconductor nanoparticles Resistive switching |
| dewey-raw |
670 |
| isfreeaccess_bool |
false |
| container_title |
Ceramics international |
| authorswithroles_txt_mv |
Zhou, Dan @@aut@@ Chen, Fenggui @@aut@@ Han, Shuai @@aut@@ Hu, Wei @@aut@@ Zang, Zhigang @@aut@@ Hu, Zhiping @@aut@@ Li, Shiqi @@aut@@ Tang, Xiaosheng @@aut@@ |
| publishDateDaySort_date |
2018-01-01T00:00:00Z |
| hierarchy_top_id |
320584305 |
| dewey-sort |
3670 |
| id |
ELV001095676 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV001095676</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230524125948.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230428s2018 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.ceramint.2018.08.126</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV001095676</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0272-8842(18)32186-2</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.60</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">58.45</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Zhou, Dan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Resistive switching characteristics of AgInZnS nanoparticles</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2018</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Resistive random access memory has emerged as a promising next-generation non-volatile memory. AgInZnS (AIZS) semiconductor nanoparticles are demonstrated due to their large abundance, non-toxicity and the simplicity of synthesis. Herein, AIZS nanoparticles are synthesized as the switching layer in the sandwich structure of Al/AIZS/ITO via a hot-injection method and show excellent optical and electronic properties. By means of the electrical characterization, the memory device shows bipolar resistive switching behavior and exhibits the ON/OFF current ratio of about 18 with the good endurance performance over 75 cycles. This study reveals that the obtained AIZS nanoparticles have a great potential to be used in non-volatile resistive switching memory application.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Resistive random access memory</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">AgInZnS</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductor nanoparticles</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Resistive switching</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Chen, Fenggui</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Han, Shuai</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hu, Wei</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zang, Zhigang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hu, Zhiping</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Shiqi</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tang, Xiaosheng</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Ceramics international</subfield><subfield code="d">Amsterdam [u.a.] : Elsevier Science, 1995</subfield><subfield code="g">44, Seite S152-S155</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)320584305</subfield><subfield code="w">(DE-600)2018052-4</subfield><subfield code="w">(DE-576)25523063X</subfield><subfield code="x">0272-8842</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:44</subfield><subfield code="g">pages:S152-S155</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2008</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2038</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2065</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2068</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2088</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2113</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2118</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2147</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2148</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2470</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2522</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">51.60</subfield><subfield code="j">Keramische Werkstoffe</subfield><subfield code="j">Hartstoffe</subfield><subfield code="x">Werkstoffkunde</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">58.45</subfield><subfield code="j">Gesteinshüttenkunde</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">44</subfield><subfield code="h">S152-S155</subfield></datafield></record></collection>
|
| author |
Zhou, Dan |
| spellingShingle |
Zhou, Dan ddc 670 bkl 51.60 bkl 58.45 misc Resistive random access memory misc AgInZnS misc Semiconductor nanoparticles misc Resistive switching Resistive switching characteristics of AgInZnS nanoparticles |
| authorStr |
Zhou, Dan |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)320584305 |
| format |
electronic Article |
| dewey-ones |
670 - Manufacturing |
| delete_txt_mv |
keep |
| author_role |
aut aut aut aut aut aut aut aut |
| collection |
elsevier |
| remote_str |
true |
| illustrated |
Not Illustrated |
| issn |
0272-8842 |
| topic_title |
670 DE-600 51.60 bkl 58.45 bkl Resistive switching characteristics of AgInZnS nanoparticles Resistive random access memory AgInZnS Semiconductor nanoparticles Resistive switching |
| topic |
ddc 670 bkl 51.60 bkl 58.45 misc Resistive random access memory misc AgInZnS misc Semiconductor nanoparticles misc Resistive switching |
| topic_unstemmed |
ddc 670 bkl 51.60 bkl 58.45 misc Resistive random access memory misc AgInZnS misc Semiconductor nanoparticles misc Resistive switching |
| topic_browse |
ddc 670 bkl 51.60 bkl 58.45 misc Resistive random access memory misc AgInZnS misc Semiconductor nanoparticles misc Resistive switching |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
cr |
| hierarchy_parent_title |
Ceramics international |
| hierarchy_parent_id |
320584305 |
| dewey-tens |
670 - Manufacturing |
| hierarchy_top_title |
Ceramics international |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)320584305 (DE-600)2018052-4 (DE-576)25523063X |
| title |
Resistive switching characteristics of AgInZnS nanoparticles |
| ctrlnum |
(DE-627)ELV001095676 (ELSEVIER)S0272-8842(18)32186-2 |
| title_full |
Resistive switching characteristics of AgInZnS nanoparticles |
| author_sort |
Zhou, Dan |
| journal |
Ceramics international |
| journalStr |
Ceramics international |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
2018 |
| contenttype_str_mv |
zzz |
| author_browse |
Zhou, Dan Chen, Fenggui Han, Shuai Hu, Wei Zang, Zhigang Hu, Zhiping Li, Shiqi Tang, Xiaosheng |
| container_volume |
44 |
| class |
670 DE-600 51.60 bkl 58.45 bkl |
| format_se |
Elektronische Aufsätze |
| author-letter |
Zhou, Dan |
| doi_str_mv |
10.1016/j.ceramint.2018.08.126 |
| dewey-full |
670 |
| author2-role |
verfasserin |
| title_sort |
resistive switching characteristics of aginzns nanoparticles |
| title_auth |
Resistive switching characteristics of AgInZnS nanoparticles |
| abstract |
Resistive random access memory has emerged as a promising next-generation non-volatile memory. AgInZnS (AIZS) semiconductor nanoparticles are demonstrated due to their large abundance, non-toxicity and the simplicity of synthesis. Herein, AIZS nanoparticles are synthesized as the switching layer in the sandwich structure of Al/AIZS/ITO via a hot-injection method and show excellent optical and electronic properties. By means of the electrical characterization, the memory device shows bipolar resistive switching behavior and exhibits the ON/OFF current ratio of about 18 with the good endurance performance over 75 cycles. This study reveals that the obtained AIZS nanoparticles have a great potential to be used in non-volatile resistive switching memory application. |
| abstractGer |
Resistive random access memory has emerged as a promising next-generation non-volatile memory. AgInZnS (AIZS) semiconductor nanoparticles are demonstrated due to their large abundance, non-toxicity and the simplicity of synthesis. Herein, AIZS nanoparticles are synthesized as the switching layer in the sandwich structure of Al/AIZS/ITO via a hot-injection method and show excellent optical and electronic properties. By means of the electrical characterization, the memory device shows bipolar resistive switching behavior and exhibits the ON/OFF current ratio of about 18 with the good endurance performance over 75 cycles. This study reveals that the obtained AIZS nanoparticles have a great potential to be used in non-volatile resistive switching memory application. |
| abstract_unstemmed |
Resistive random access memory has emerged as a promising next-generation non-volatile memory. AgInZnS (AIZS) semiconductor nanoparticles are demonstrated due to their large abundance, non-toxicity and the simplicity of synthesis. Herein, AIZS nanoparticles are synthesized as the switching layer in the sandwich structure of Al/AIZS/ITO via a hot-injection method and show excellent optical and electronic properties. By means of the electrical characterization, the memory device shows bipolar resistive switching behavior and exhibits the ON/OFF current ratio of about 18 with the good endurance performance over 75 cycles. This study reveals that the obtained AIZS nanoparticles have a great potential to be used in non-volatile resistive switching memory application. |
| collection_details |
GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 |
| title_short |
Resistive switching characteristics of AgInZnS nanoparticles |
| remote_bool |
true |
| author2 |
Chen, Fenggui Han, Shuai Hu, Wei Zang, Zhigang Hu, Zhiping Li, Shiqi Tang, Xiaosheng |
| author2Str |
Chen, Fenggui Han, Shuai Hu, Wei Zang, Zhigang Hu, Zhiping Li, Shiqi Tang, Xiaosheng |
| ppnlink |
320584305 |
| mediatype_str_mv |
c |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1016/j.ceramint.2018.08.126 |
| up_date |
2024-07-06T20:12:53.425Z |
| _version_ |
1803861909491941376 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV001095676</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230524125948.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230428s2018 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.ceramint.2018.08.126</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV001095676</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0272-8842(18)32186-2</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.60</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">58.45</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Zhou, Dan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Resistive switching characteristics of AgInZnS nanoparticles</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2018</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Resistive random access memory has emerged as a promising next-generation non-volatile memory. AgInZnS (AIZS) semiconductor nanoparticles are demonstrated due to their large abundance, non-toxicity and the simplicity of synthesis. Herein, AIZS nanoparticles are synthesized as the switching layer in the sandwich structure of Al/AIZS/ITO via a hot-injection method and show excellent optical and electronic properties. By means of the electrical characterization, the memory device shows bipolar resistive switching behavior and exhibits the ON/OFF current ratio of about 18 with the good endurance performance over 75 cycles. This study reveals that the obtained AIZS nanoparticles have a great potential to be used in non-volatile resistive switching memory application.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Resistive random access memory</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">AgInZnS</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductor nanoparticles</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Resistive switching</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Chen, Fenggui</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Han, Shuai</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hu, Wei</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zang, Zhigang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hu, Zhiping</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Shiqi</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tang, Xiaosheng</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Ceramics international</subfield><subfield code="d">Amsterdam [u.a.] : Elsevier Science, 1995</subfield><subfield code="g">44, Seite S152-S155</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)320584305</subfield><subfield code="w">(DE-600)2018052-4</subfield><subfield code="w">(DE-576)25523063X</subfield><subfield code="x">0272-8842</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:44</subfield><subfield code="g">pages:S152-S155</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2008</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2038</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2065</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2068</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2088</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2113</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2118</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2147</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2148</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2470</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2522</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">51.60</subfield><subfield code="j">Keramische Werkstoffe</subfield><subfield code="j">Hartstoffe</subfield><subfield code="x">Werkstoffkunde</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">58.45</subfield><subfield code="j">Gesteinshüttenkunde</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">44</subfield><subfield code="h">S152-S155</subfield></datafield></record></collection>
|
| score |
7.3985367 |