An efficient solution-processed hole injection layer with phosphomolybdic acid in quantum dot light-emitting diodes

We have successfully employed solution-processed phosphomolybdic acid (PMA) as an efficient hole injection layer (HIL) in quantum dot light-emitting diodes. With its low price, simple solution processing, good physical and optical properties, PMA is a good candidate as a HIL in optoelectronic device...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Dong, Dan [verfasserIn] Lian, Lu [verfasserIn] Wang, Han [verfasserIn] He, Gufeng [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2018

Schlagwörter:	Phosphomolybdic acid Hole injection Annealing temperature Annealing atmosphere

Übergeordnetes Werk:	Enthalten in: Organic electronics - Amsterdam [u.a.] : Elsevier Science, 2000, 62, Seite 320-326
Übergeordnetes Werk:	volume:62 ; pages:320-326

DOI / URN:	10.1016/j.orgel.2018.08.026

Katalog-ID:	ELV001128663

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520			\|a We have successfully employed solution-processed phosphomolybdic acid (PMA) as an efficient hole injection layer (HIL) in quantum dot light-emitting diodes. With its low price, simple solution processing, good physical and optical properties, PMA is a good candidate as a HIL in optoelectronic devices. Compared to the device with widely used Poly(3,4-ethylenedioxyth-iophene):poly(styrene-sulfonate) (PEDOT:PSS) as a HIL, the PMA-based device possesses much higher current density and lower driving voltages, demonstrating a superior hole injection ability. Besides, the annealing temperature and atmosphere have strong influences on Mo6+/Mo5+ ratio and work function of PMA film, resulting in different hole injection property. Consequently, with the optimized PMA as a HIL, the device obtains a dramatically lower turn-on voltage of 2.7 V, along with a 65.4% improvement on maximum power efficiency compared to that with PEDOT:PSS.
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author_variant	d d dd l l ll h w hw g h gh
matchkey_str	dongdanlianluwanghanhegufeng:2018----:nfiinsltopoesdoenetolyrihhshmlbiaiiqa
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allfields	10.1016/j.orgel.2018.08.026 doi (DE-627)ELV001128663 (ELSEVIER)S1566-1199(18)30430-0 DE-627 ger DE-627 rda eng 670 DE-600 50.00 bkl Dong, Dan verfasserin aut An efficient solution-processed hole injection layer with phosphomolybdic acid in quantum dot light-emitting diodes 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have successfully employed solution-processed phosphomolybdic acid (PMA) as an efficient hole injection layer (HIL) in quantum dot light-emitting diodes. With its low price, simple solution processing, good physical and optical properties, PMA is a good candidate as a HIL in optoelectronic devices. Compared to the device with widely used Poly(3,4-ethylenedioxyth-iophene):poly(styrene-sulfonate) (PEDOT:PSS) as a HIL, the PMA-based device possesses much higher current density and lower driving voltages, demonstrating a superior hole injection ability. Besides, the annealing temperature and atmosphere have strong influences on Mo6+/Mo5+ ratio and work function of PMA film, resulting in different hole injection property. Consequently, with the optimized PMA as a HIL, the device obtains a dramatically lower turn-on voltage of 2.7 V, along with a 65.4% improvement on maximum power efficiency compared to that with PEDOT:PSS. Phosphomolybdic acid Hole injection Annealing temperature Annealing atmosphere Lian, Lu verfasserin aut Wang, Han verfasserin aut He, Gufeng verfasserin aut Enthalten in Organic electronics Amsterdam [u.a.] : Elsevier Science, 2000 62, Seite 320-326 Online-Ressource (DE-627)325570418 (DE-600)2037332-6 (DE-576)100645976 nnns volume:62 pages:320-326 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_165 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.00 Technik allgemein: Allgemeines AR 62 320-326
spelling	10.1016/j.orgel.2018.08.026 doi (DE-627)ELV001128663 (ELSEVIER)S1566-1199(18)30430-0 DE-627 ger DE-627 rda eng 670 DE-600 50.00 bkl Dong, Dan verfasserin aut An efficient solution-processed hole injection layer with phosphomolybdic acid in quantum dot light-emitting diodes 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have successfully employed solution-processed phosphomolybdic acid (PMA) as an efficient hole injection layer (HIL) in quantum dot light-emitting diodes. With its low price, simple solution processing, good physical and optical properties, PMA is a good candidate as a HIL in optoelectronic devices. Compared to the device with widely used Poly(3,4-ethylenedioxyth-iophene):poly(styrene-sulfonate) (PEDOT:PSS) as a HIL, the PMA-based device possesses much higher current density and lower driving voltages, demonstrating a superior hole injection ability. Besides, the annealing temperature and atmosphere have strong influences on Mo6+/Mo5+ ratio and work function of PMA film, resulting in different hole injection property. Consequently, with the optimized PMA as a HIL, the device obtains a dramatically lower turn-on voltage of 2.7 V, along with a 65.4% improvement on maximum power efficiency compared to that with PEDOT:PSS. Phosphomolybdic acid Hole injection Annealing temperature Annealing atmosphere Lian, Lu verfasserin aut Wang, Han verfasserin aut He, Gufeng verfasserin aut Enthalten in Organic electronics Amsterdam [u.a.] : Elsevier Science, 2000 62, Seite 320-326 Online-Ressource (DE-627)325570418 (DE-600)2037332-6 (DE-576)100645976 nnns volume:62 pages:320-326 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_165 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.00 Technik allgemein: Allgemeines AR 62 320-326
allfields_unstemmed	10.1016/j.orgel.2018.08.026 doi (DE-627)ELV001128663 (ELSEVIER)S1566-1199(18)30430-0 DE-627 ger DE-627 rda eng 670 DE-600 50.00 bkl Dong, Dan verfasserin aut An efficient solution-processed hole injection layer with phosphomolybdic acid in quantum dot light-emitting diodes 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have successfully employed solution-processed phosphomolybdic acid (PMA) as an efficient hole injection layer (HIL) in quantum dot light-emitting diodes. With its low price, simple solution processing, good physical and optical properties, PMA is a good candidate as a HIL in optoelectronic devices. Compared to the device with widely used Poly(3,4-ethylenedioxyth-iophene):poly(styrene-sulfonate) (PEDOT:PSS) as a HIL, the PMA-based device possesses much higher current density and lower driving voltages, demonstrating a superior hole injection ability. Besides, the annealing temperature and atmosphere have strong influences on Mo6+/Mo5+ ratio and work function of PMA film, resulting in different hole injection property. Consequently, with the optimized PMA as a HIL, the device obtains a dramatically lower turn-on voltage of 2.7 V, along with a 65.4% improvement on maximum power efficiency compared to that with PEDOT:PSS. Phosphomolybdic acid Hole injection Annealing temperature Annealing atmosphere Lian, Lu verfasserin aut Wang, Han verfasserin aut He, Gufeng verfasserin aut Enthalten in Organic electronics Amsterdam [u.a.] : Elsevier Science, 2000 62, Seite 320-326 Online-Ressource (DE-627)325570418 (DE-600)2037332-6 (DE-576)100645976 nnns volume:62 pages:320-326 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_165 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.00 Technik allgemein: Allgemeines AR 62 320-326
allfieldsGer	10.1016/j.orgel.2018.08.026 doi (DE-627)ELV001128663 (ELSEVIER)S1566-1199(18)30430-0 DE-627 ger DE-627 rda eng 670 DE-600 50.00 bkl Dong, Dan verfasserin aut An efficient solution-processed hole injection layer with phosphomolybdic acid in quantum dot light-emitting diodes 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have successfully employed solution-processed phosphomolybdic acid (PMA) as an efficient hole injection layer (HIL) in quantum dot light-emitting diodes. With its low price, simple solution processing, good physical and optical properties, PMA is a good candidate as a HIL in optoelectronic devices. Compared to the device with widely used Poly(3,4-ethylenedioxyth-iophene):poly(styrene-sulfonate) (PEDOT:PSS) as a HIL, the PMA-based device possesses much higher current density and lower driving voltages, demonstrating a superior hole injection ability. Besides, the annealing temperature and atmosphere have strong influences on Mo6+/Mo5+ ratio and work function of PMA film, resulting in different hole injection property. Consequently, with the optimized PMA as a HIL, the device obtains a dramatically lower turn-on voltage of 2.7 V, along with a 65.4% improvement on maximum power efficiency compared to that with PEDOT:PSS. Phosphomolybdic acid Hole injection Annealing temperature Annealing atmosphere Lian, Lu verfasserin aut Wang, Han verfasserin aut He, Gufeng verfasserin aut Enthalten in Organic electronics Amsterdam [u.a.] : Elsevier Science, 2000 62, Seite 320-326 Online-Ressource (DE-627)325570418 (DE-600)2037332-6 (DE-576)100645976 nnns volume:62 pages:320-326 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_165 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.00 Technik allgemein: Allgemeines AR 62 320-326
allfieldsSound	10.1016/j.orgel.2018.08.026 doi (DE-627)ELV001128663 (ELSEVIER)S1566-1199(18)30430-0 DE-627 ger DE-627 rda eng 670 DE-600 50.00 bkl Dong, Dan verfasserin aut An efficient solution-processed hole injection layer with phosphomolybdic acid in quantum dot light-emitting diodes 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We have successfully employed solution-processed phosphomolybdic acid (PMA) as an efficient hole injection layer (HIL) in quantum dot light-emitting diodes. With its low price, simple solution processing, good physical and optical properties, PMA is a good candidate as a HIL in optoelectronic devices. Compared to the device with widely used Poly(3,4-ethylenedioxyth-iophene):poly(styrene-sulfonate) (PEDOT:PSS) as a HIL, the PMA-based device possesses much higher current density and lower driving voltages, demonstrating a superior hole injection ability. Besides, the annealing temperature and atmosphere have strong influences on Mo6+/Mo5+ ratio and work function of PMA film, resulting in different hole injection property. Consequently, with the optimized PMA as a HIL, the device obtains a dramatically lower turn-on voltage of 2.7 V, along with a 65.4% improvement on maximum power efficiency compared to that with PEDOT:PSS. Phosphomolybdic acid Hole injection Annealing temperature Annealing atmosphere Lian, Lu verfasserin aut Wang, Han verfasserin aut He, Gufeng verfasserin aut Enthalten in Organic electronics Amsterdam [u.a.] : Elsevier Science, 2000 62, Seite 320-326 Online-Ressource (DE-627)325570418 (DE-600)2037332-6 (DE-576)100645976 nnns volume:62 pages:320-326 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_165 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.00 Technik allgemein: Allgemeines AR 62 320-326
language	English
source	Enthalten in Organic electronics 62, Seite 320-326 volume:62 pages:320-326
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bklname	Technik allgemein: Allgemeines
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topic_facet	Phosphomolybdic acid Hole injection Annealing temperature Annealing atmosphere
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container_title	Organic electronics
authorswithroles_txt_mv	Dong, Dan @@aut@@ Lian, Lu @@aut@@ Wang, Han @@aut@@ He, Gufeng @@aut@@
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author	Dong, Dan
spellingShingle	Dong, Dan ddc 670 bkl 50.00 misc Phosphomolybdic acid misc Hole injection misc Annealing temperature misc Annealing atmosphere An efficient solution-processed hole injection layer with phosphomolybdic acid in quantum dot light-emitting diodes
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topic_title	670 DE-600 50.00 bkl An efficient solution-processed hole injection layer with phosphomolybdic acid in quantum dot light-emitting diodes Phosphomolybdic acid Hole injection Annealing temperature Annealing atmosphere
topic	ddc 670 bkl 50.00 misc Phosphomolybdic acid misc Hole injection misc Annealing temperature misc Annealing atmosphere
topic_unstemmed	ddc 670 bkl 50.00 misc Phosphomolybdic acid misc Hole injection misc Annealing temperature misc Annealing atmosphere
topic_browse	ddc 670 bkl 50.00 misc Phosphomolybdic acid misc Hole injection misc Annealing temperature misc Annealing atmosphere
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title	An efficient solution-processed hole injection layer with phosphomolybdic acid in quantum dot light-emitting diodes
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title_full	An efficient solution-processed hole injection layer with phosphomolybdic acid in quantum dot light-emitting diodes
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title_sort	an efficient solution-processed hole injection layer with phosphomolybdic acid in quantum dot light-emitting diodes
title_auth	An efficient solution-processed hole injection layer with phosphomolybdic acid in quantum dot light-emitting diodes
abstract	We have successfully employed solution-processed phosphomolybdic acid (PMA) as an efficient hole injection layer (HIL) in quantum dot light-emitting diodes. With its low price, simple solution processing, good physical and optical properties, PMA is a good candidate as a HIL in optoelectronic devices. Compared to the device with widely used Poly(3,4-ethylenedioxyth-iophene):poly(styrene-sulfonate) (PEDOT:PSS) as a HIL, the PMA-based device possesses much higher current density and lower driving voltages, demonstrating a superior hole injection ability. Besides, the annealing temperature and atmosphere have strong influences on Mo6+/Mo5+ ratio and work function of PMA film, resulting in different hole injection property. Consequently, with the optimized PMA as a HIL, the device obtains a dramatically lower turn-on voltage of 2.7 V, along with a 65.4% improvement on maximum power efficiency compared to that with PEDOT:PSS.
abstractGer	We have successfully employed solution-processed phosphomolybdic acid (PMA) as an efficient hole injection layer (HIL) in quantum dot light-emitting diodes. With its low price, simple solution processing, good physical and optical properties, PMA is a good candidate as a HIL in optoelectronic devices. Compared to the device with widely used Poly(3,4-ethylenedioxyth-iophene):poly(styrene-sulfonate) (PEDOT:PSS) as a HIL, the PMA-based device possesses much higher current density and lower driving voltages, demonstrating a superior hole injection ability. Besides, the annealing temperature and atmosphere have strong influences on Mo6+/Mo5+ ratio and work function of PMA film, resulting in different hole injection property. Consequently, with the optimized PMA as a HIL, the device obtains a dramatically lower turn-on voltage of 2.7 V, along with a 65.4% improvement on maximum power efficiency compared to that with PEDOT:PSS.
abstract_unstemmed	We have successfully employed solution-processed phosphomolybdic acid (PMA) as an efficient hole injection layer (HIL) in quantum dot light-emitting diodes. With its low price, simple solution processing, good physical and optical properties, PMA is a good candidate as a HIL in optoelectronic devices. Compared to the device with widely used Poly(3,4-ethylenedioxyth-iophene):poly(styrene-sulfonate) (PEDOT:PSS) as a HIL, the PMA-based device possesses much higher current density and lower driving voltages, demonstrating a superior hole injection ability. Besides, the annealing temperature and atmosphere have strong influences on Mo6+/Mo5+ ratio and work function of PMA film, resulting in different hole injection property. Consequently, with the optimized PMA as a HIL, the device obtains a dramatically lower turn-on voltage of 2.7 V, along with a 65.4% improvement on maximum power efficiency compared to that with PEDOT:PSS.
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title_short	An efficient solution-processed hole injection layer with phosphomolybdic acid in quantum dot light-emitting diodes
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author2	Lian, Lu Wang, Han He, Gufeng
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doi_str	10.1016/j.orgel.2018.08.026
up_date	2024-07-06T20:19:30.563Z
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fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV001128663</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230524141501.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230428s2018 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.orgel.2018.08.026</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV001128663</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S1566-1199(18)30430-0</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">50.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Dong, Dan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">An efficient solution-processed hole injection layer with phosphomolybdic acid in quantum dot light-emitting diodes</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2018</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">We have successfully employed solution-processed phosphomolybdic acid (PMA) as an efficient hole injection layer (HIL) in quantum dot light-emitting diodes. With its low price, simple solution processing, good physical and optical properties, PMA is a good candidate as a HIL in optoelectronic devices. Compared to the device with widely used Poly(3,4-ethylenedioxyth-iophene):poly(styrene-sulfonate) (PEDOT:PSS) as a HIL, the PMA-based device possesses much higher current density and lower driving voltages, demonstrating a superior hole injection ability. Besides, the annealing temperature and atmosphere have strong influences on Mo6+/Mo5+ ratio and work function of PMA film, resulting in different hole injection property. 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An efficient solution-processed hole injection layer with phosphomolybdic acid in quantum dot light-emitting diodes

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