Chemical modification and patterning of self assembled monolayers using scanning electron and ion-beam lithography

We present chemical modification of self assembled monolayers (SAMs) using electron and ion-beam lithographies. We used thiolated polyethylene oxide (PEO) SAMs on gold to fabricate chemically contrasting patterns at the nanoscale. Patterned surfaces were characterized by X-ray photoelectron spectros...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Roldán, Maria Jesús Pérez [verfasserIn] García, César Pascual [verfasserIn] Marchesini, Gerardo [verfasserIn] Gilliland, Douglas [verfasserIn] Ceccone, Giacomo [verfasserIn] Mehn, Dora [verfasserIn] Colpo, Pascal [verfasserIn] Rossi, François [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2011

Schlagwörter:	SAMs Electron beam lithography Ion-beam lithography

Übergeordnetes Werk:	Enthalten in: Microelectronic engineering - [S.l.] : Elsevier, 1983, 88, Seite 1948-1950
Übergeordnetes Werk:	volume:88 ; pages:1948-1950

DOI / URN:	10.1016/j.mee.2010.12.104

Katalog-ID:	ELV001299972

Internformat


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245	1	0	\|a Chemical modification and patterning of self assembled monolayers using scanning electron and ion-beam lithography
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520			\|a We present chemical modification of self assembled monolayers (SAMs) using electron and ion-beam lithographies. We used thiolated polyethylene oxide (PEO) SAMs on gold to fabricate chemically contrasting patterns at the nanoscale. Patterned surfaces were characterized by X-ray photoelectron spectroscopy (XPS), time of flight-secondary ion mass spectrometry (ToF-SIMS). Results showed a chemical modification of surfaces patterned by means of electron beam (e-beam) lithography and a removal of PEO SAMs on the areas treated with the ion beam. The chemical modification of PEO SAMs converted the non-fouling surfaces on fouling surfaces.
650		4	\|a SAMs
650		4	\|a Electron beam lithography
650		4	\|a Ion-beam lithography
700	1		\|a García, César Pascual \|e verfasserin \|4 aut
700	1		\|a Marchesini, Gerardo \|e verfasserin \|4 aut
700	1		\|a Gilliland, Douglas \|e verfasserin \|4 aut
700	1		\|a Ceccone, Giacomo \|e verfasserin \|4 aut
700	1		\|a Mehn, Dora \|e verfasserin \|4 aut
700	1		\|a Colpo, Pascal \|e verfasserin \|4 aut
700	1		\|a Rossi, François \|e verfasserin \|4 aut
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936	b	k	\|a 53.51 \|j Bauelemente der Elektronik
936	b	k	\|a 53.56 \|j Halbleitertechnologie
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936	b	k	\|a 50.94 \|j Mikrosystemtechnik \|j Nanotechnologie
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Indexfelder

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publishDate	2011
allfields	10.1016/j.mee.2010.12.104 doi (DE-627)ELV001299972 (ELSEVIER)S0167-9317(10)00592-7 DE-627 ger DE-627 rda eng 620 DE-600 53.51 bkl 53.56 bkl 53.52 bkl 50.94 bkl Roldán, Maria Jesús Pérez verfasserin aut Chemical modification and patterning of self assembled monolayers using scanning electron and ion-beam lithography 2011 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We present chemical modification of self assembled monolayers (SAMs) using electron and ion-beam lithographies. We used thiolated polyethylene oxide (PEO) SAMs on gold to fabricate chemically contrasting patterns at the nanoscale. Patterned surfaces were characterized by X-ray photoelectron spectroscopy (XPS), time of flight-secondary ion mass spectrometry (ToF-SIMS). Results showed a chemical modification of surfaces patterned by means of electron beam (e-beam) lithography and a removal of PEO SAMs on the areas treated with the ion beam. The chemical modification of PEO SAMs converted the non-fouling surfaces on fouling surfaces. SAMs Electron beam lithography Ion-beam lithography García, César Pascual verfasserin aut Marchesini, Gerardo verfasserin aut Gilliland, Douglas verfasserin aut Ceccone, Giacomo verfasserin aut Mehn, Dora verfasserin aut Colpo, Pascal verfasserin aut Rossi, François verfasserin aut Enthalten in Microelectronic engineering [S.l.] : Elsevier, 1983 88, Seite 1948-1950 Online-Ressource (DE-627)30635828X (DE-600)1497065-X (DE-576)081860986 nnns volume:88 pages:1948-1950 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 53.51 Bauelemente der Elektronik 53.56 Halbleitertechnologie 53.52 Elektronische Schaltungen 50.94 Mikrosystemtechnik Nanotechnologie AR 88 1948-1950
spelling	10.1016/j.mee.2010.12.104 doi (DE-627)ELV001299972 (ELSEVIER)S0167-9317(10)00592-7 DE-627 ger DE-627 rda eng 620 DE-600 53.51 bkl 53.56 bkl 53.52 bkl 50.94 bkl Roldán, Maria Jesús Pérez verfasserin aut Chemical modification and patterning of self assembled monolayers using scanning electron and ion-beam lithography 2011 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We present chemical modification of self assembled monolayers (SAMs) using electron and ion-beam lithographies. We used thiolated polyethylene oxide (PEO) SAMs on gold to fabricate chemically contrasting patterns at the nanoscale. Patterned surfaces were characterized by X-ray photoelectron spectroscopy (XPS), time of flight-secondary ion mass spectrometry (ToF-SIMS). Results showed a chemical modification of surfaces patterned by means of electron beam (e-beam) lithography and a removal of PEO SAMs on the areas treated with the ion beam. The chemical modification of PEO SAMs converted the non-fouling surfaces on fouling surfaces. SAMs Electron beam lithography Ion-beam lithography García, César Pascual verfasserin aut Marchesini, Gerardo verfasserin aut Gilliland, Douglas verfasserin aut Ceccone, Giacomo verfasserin aut Mehn, Dora verfasserin aut Colpo, Pascal verfasserin aut Rossi, François verfasserin aut Enthalten in Microelectronic engineering [S.l.] : Elsevier, 1983 88, Seite 1948-1950 Online-Ressource (DE-627)30635828X (DE-600)1497065-X (DE-576)081860986 nnns volume:88 pages:1948-1950 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 53.51 Bauelemente der Elektronik 53.56 Halbleitertechnologie 53.52 Elektronische Schaltungen 50.94 Mikrosystemtechnik Nanotechnologie AR 88 1948-1950
allfields_unstemmed	10.1016/j.mee.2010.12.104 doi (DE-627)ELV001299972 (ELSEVIER)S0167-9317(10)00592-7 DE-627 ger DE-627 rda eng 620 DE-600 53.51 bkl 53.56 bkl 53.52 bkl 50.94 bkl Roldán, Maria Jesús Pérez verfasserin aut Chemical modification and patterning of self assembled monolayers using scanning electron and ion-beam lithography 2011 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We present chemical modification of self assembled monolayers (SAMs) using electron and ion-beam lithographies. We used thiolated polyethylene oxide (PEO) SAMs on gold to fabricate chemically contrasting patterns at the nanoscale. Patterned surfaces were characterized by X-ray photoelectron spectroscopy (XPS), time of flight-secondary ion mass spectrometry (ToF-SIMS). Results showed a chemical modification of surfaces patterned by means of electron beam (e-beam) lithography and a removal of PEO SAMs on the areas treated with the ion beam. The chemical modification of PEO SAMs converted the non-fouling surfaces on fouling surfaces. SAMs Electron beam lithography Ion-beam lithography García, César Pascual verfasserin aut Marchesini, Gerardo verfasserin aut Gilliland, Douglas verfasserin aut Ceccone, Giacomo verfasserin aut Mehn, Dora verfasserin aut Colpo, Pascal verfasserin aut Rossi, François verfasserin aut Enthalten in Microelectronic engineering [S.l.] : Elsevier, 1983 88, Seite 1948-1950 Online-Ressource (DE-627)30635828X (DE-600)1497065-X (DE-576)081860986 nnns volume:88 pages:1948-1950 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 53.51 Bauelemente der Elektronik 53.56 Halbleitertechnologie 53.52 Elektronische Schaltungen 50.94 Mikrosystemtechnik Nanotechnologie AR 88 1948-1950
allfieldsGer	10.1016/j.mee.2010.12.104 doi (DE-627)ELV001299972 (ELSEVIER)S0167-9317(10)00592-7 DE-627 ger DE-627 rda eng 620 DE-600 53.51 bkl 53.56 bkl 53.52 bkl 50.94 bkl Roldán, Maria Jesús Pérez verfasserin aut Chemical modification and patterning of self assembled monolayers using scanning electron and ion-beam lithography 2011 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We present chemical modification of self assembled monolayers (SAMs) using electron and ion-beam lithographies. We used thiolated polyethylene oxide (PEO) SAMs on gold to fabricate chemically contrasting patterns at the nanoscale. Patterned surfaces were characterized by X-ray photoelectron spectroscopy (XPS), time of flight-secondary ion mass spectrometry (ToF-SIMS). Results showed a chemical modification of surfaces patterned by means of electron beam (e-beam) lithography and a removal of PEO SAMs on the areas treated with the ion beam. The chemical modification of PEO SAMs converted the non-fouling surfaces on fouling surfaces. SAMs Electron beam lithography Ion-beam lithography García, César Pascual verfasserin aut Marchesini, Gerardo verfasserin aut Gilliland, Douglas verfasserin aut Ceccone, Giacomo verfasserin aut Mehn, Dora verfasserin aut Colpo, Pascal verfasserin aut Rossi, François verfasserin aut Enthalten in Microelectronic engineering [S.l.] : Elsevier, 1983 88, Seite 1948-1950 Online-Ressource (DE-627)30635828X (DE-600)1497065-X (DE-576)081860986 nnns volume:88 pages:1948-1950 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 53.51 Bauelemente der Elektronik 53.56 Halbleitertechnologie 53.52 Elektronische Schaltungen 50.94 Mikrosystemtechnik Nanotechnologie AR 88 1948-1950
allfieldsSound	10.1016/j.mee.2010.12.104 doi (DE-627)ELV001299972 (ELSEVIER)S0167-9317(10)00592-7 DE-627 ger DE-627 rda eng 620 DE-600 53.51 bkl 53.56 bkl 53.52 bkl 50.94 bkl Roldán, Maria Jesús Pérez verfasserin aut Chemical modification and patterning of self assembled monolayers using scanning electron and ion-beam lithography 2011 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We present chemical modification of self assembled monolayers (SAMs) using electron and ion-beam lithographies. We used thiolated polyethylene oxide (PEO) SAMs on gold to fabricate chemically contrasting patterns at the nanoscale. Patterned surfaces were characterized by X-ray photoelectron spectroscopy (XPS), time of flight-secondary ion mass spectrometry (ToF-SIMS). Results showed a chemical modification of surfaces patterned by means of electron beam (e-beam) lithography and a removal of PEO SAMs on the areas treated with the ion beam. The chemical modification of PEO SAMs converted the non-fouling surfaces on fouling surfaces. SAMs Electron beam lithography Ion-beam lithography García, César Pascual verfasserin aut Marchesini, Gerardo verfasserin aut Gilliland, Douglas verfasserin aut Ceccone, Giacomo verfasserin aut Mehn, Dora verfasserin aut Colpo, Pascal verfasserin aut Rossi, François verfasserin aut Enthalten in Microelectronic engineering [S.l.] : Elsevier, 1983 88, Seite 1948-1950 Online-Ressource (DE-627)30635828X (DE-600)1497065-X (DE-576)081860986 nnns volume:88 pages:1948-1950 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 53.51 Bauelemente der Elektronik 53.56 Halbleitertechnologie 53.52 Elektronische Schaltungen 50.94 Mikrosystemtechnik Nanotechnologie AR 88 1948-1950
language	English
source	Enthalten in Microelectronic engineering 88, Seite 1948-1950 volume:88 pages:1948-1950
sourceStr	Enthalten in Microelectronic engineering 88, Seite 1948-1950 volume:88 pages:1948-1950
format_phy_str_mv	Article
bklname	Bauelemente der Elektronik Halbleitertechnologie Elektronische Schaltungen Mikrosystemtechnik Nanotechnologie
institution	findex.gbv.de
topic_facet	SAMs Electron beam lithography Ion-beam lithography
dewey-raw	620
isfreeaccess_bool	false
container_title	Microelectronic engineering
authorswithroles_txt_mv	Roldán, Maria Jesús Pérez @@aut@@ García, César Pascual @@aut@@ Marchesini, Gerardo @@aut@@ Gilliland, Douglas @@aut@@ Ceccone, Giacomo @@aut@@ Mehn, Dora @@aut@@ Colpo, Pascal @@aut@@ Rossi, François @@aut@@
publishDateDaySort_date	2011-01-01T00:00:00Z
hierarchy_top_id	30635828X
dewey-sort	3620
id	ELV001299972
language_de	englisch
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author	Roldán, Maria Jesús Pérez
spellingShingle	Roldán, Maria Jesús Pérez ddc 620 bkl 53.51 bkl 53.56 bkl 53.52 bkl 50.94 misc SAMs misc Electron beam lithography misc Ion-beam lithography Chemical modification and patterning of self assembled monolayers using scanning electron and ion-beam lithography
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topic_title	620 DE-600 53.51 bkl 53.56 bkl 53.52 bkl 50.94 bkl Chemical modification and patterning of self assembled monolayers using scanning electron and ion-beam lithography SAMs Electron beam lithography Ion-beam lithography
topic	ddc 620 bkl 53.51 bkl 53.56 bkl 53.52 bkl 50.94 misc SAMs misc Electron beam lithography misc Ion-beam lithography
topic_unstemmed	ddc 620 bkl 53.51 bkl 53.56 bkl 53.52 bkl 50.94 misc SAMs misc Electron beam lithography misc Ion-beam lithography
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title	Chemical modification and patterning of self assembled monolayers using scanning electron and ion-beam lithography
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title_full	Chemical modification and patterning of self assembled monolayers using scanning electron and ion-beam lithography
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author_browse	Roldán, Maria Jesús Pérez García, César Pascual Marchesini, Gerardo Gilliland, Douglas Ceccone, Giacomo Mehn, Dora Colpo, Pascal Rossi, François
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title_sort	chemical modification and patterning of self assembled monolayers using scanning electron and ion-beam lithography
title_auth	Chemical modification and patterning of self assembled monolayers using scanning electron and ion-beam lithography
abstract	We present chemical modification of self assembled monolayers (SAMs) using electron and ion-beam lithographies. We used thiolated polyethylene oxide (PEO) SAMs on gold to fabricate chemically contrasting patterns at the nanoscale. Patterned surfaces were characterized by X-ray photoelectron spectroscopy (XPS), time of flight-secondary ion mass spectrometry (ToF-SIMS). Results showed a chemical modification of surfaces patterned by means of electron beam (e-beam) lithography and a removal of PEO SAMs on the areas treated with the ion beam. The chemical modification of PEO SAMs converted the non-fouling surfaces on fouling surfaces.
abstractGer	We present chemical modification of self assembled monolayers (SAMs) using electron and ion-beam lithographies. We used thiolated polyethylene oxide (PEO) SAMs on gold to fabricate chemically contrasting patterns at the nanoscale. Patterned surfaces were characterized by X-ray photoelectron spectroscopy (XPS), time of flight-secondary ion mass spectrometry (ToF-SIMS). Results showed a chemical modification of surfaces patterned by means of electron beam (e-beam) lithography and a removal of PEO SAMs on the areas treated with the ion beam. The chemical modification of PEO SAMs converted the non-fouling surfaces on fouling surfaces.
abstract_unstemmed	We present chemical modification of self assembled monolayers (SAMs) using electron and ion-beam lithographies. We used thiolated polyethylene oxide (PEO) SAMs on gold to fabricate chemically contrasting patterns at the nanoscale. Patterned surfaces were characterized by X-ray photoelectron spectroscopy (XPS), time of flight-secondary ion mass spectrometry (ToF-SIMS). Results showed a chemical modification of surfaces patterned by means of electron beam (e-beam) lithography and a removal of PEO SAMs on the areas treated with the ion beam. The chemical modification of PEO SAMs converted the non-fouling surfaces on fouling surfaces.
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title_short	Chemical modification and patterning of self assembled monolayers using scanning electron and ion-beam lithography
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author2	García, César Pascual Marchesini, Gerardo Gilliland, Douglas Ceccone, Giacomo Mehn, Dora Colpo, Pascal Rossi, François
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up_date	2024-07-06T20:54:06.473Z
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Chemical modification and patterning of self assembled monolayers using scanning electron and ion-beam lithography

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