The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO
The effect of TiW metal barrier layer thickness on voltage-current characteristics of the Cu/TiW/ZrO2/TiN conductive bridge random access memory device was systematically investigated. The change of reset behavior from abrupt decrease to gradual decrease with increasing TiW thickness was observed. E...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Chandrasekaran, Sridhar [verfasserIn] Simanjuntak, Firman Mangasa [verfasserIn] Aluguri, Rakesh [verfasserIn] Tseng, Tseung-Yuen [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2018 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Thin solid films - Amsterdam [u.a.] : Elsevier, 1967, 660, Seite 777-781 |
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| Übergeordnetes Werk: |
volume:660 ; pages:777-781 |
| DOI / URN: |
10.1016/j.tsf.2018.03.065 |
|---|
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ELV001376489 |
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| 024 | 7 | |a 10.1016/j.tsf.2018.03.065 |2 doi | |
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| 100 | 1 | |a Chandrasekaran, Sridhar |e verfasserin |0 (orcid)0000-0003-4168-611X |4 aut | |
| 245 | 1 | 0 | |a The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO |
| 264 | 1 | |c 2018 | |
| 336 | |a nicht spezifiziert |b zzz |2 rdacontent | ||
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| 520 | |a The effect of TiW metal barrier layer thickness on voltage-current characteristics of the Cu/TiW/ZrO2/TiN conductive bridge random access memory device was systematically investigated. The change of reset behavior from abrupt decrease to gradual decrease with increasing TiW thickness was observed. Electronic conduction during the forming process was also analyzed to obtain detailed information about the effect of TiW layer thickness on the nature of the conduction phenomenon. The temperature coefficient of resistance of the conductive filament confirms that an electro-chemical metallization (ECM) based conduction was observed in the devices made with a thinner TiW layer. On the other hand, valence change memory (VCM) based conduction was observed with a thick TiW layer. A conduction mechanism is proposed to explain the ECM to VCM conduction transformation phenomenon. | ||
| 650 | 4 | |a Conductive filament | |
| 650 | 4 | |a Electro-chemical metallization | |
| 650 | 4 | |a Valence change memory | |
| 650 | 4 | |a Switching device | |
| 650 | 4 | |a Zirconium dioxide | |
| 650 | 4 | |a Titanium tungsten alloy | |
| 700 | 1 | |a Simanjuntak, Firman Mangasa |e verfasserin |4 aut | |
| 700 | 1 | |a Aluguri, Rakesh |e verfasserin |4 aut | |
| 700 | 1 | |a Tseng, Tseung-Yuen |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Thin solid films |d Amsterdam [u.a.] : Elsevier, 1967 |g 660, Seite 777-781 |h Online-Ressource |w (DE-627)300593503 |w (DE-600)1482896-0 |w (DE-576)079165354 |7 nnns |
| 773 | 1 | 8 | |g volume:660 |g pages:777-781 |
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10.1016/j.tsf.2018.03.065 doi (DE-627)ELV001376489 (ELSEVIER)S0040-6090(18)30215-3 DE-627 ger DE-627 rda eng 070 660 DE-600 33.68 bkl Chandrasekaran, Sridhar verfasserin (orcid)0000-0003-4168-611X aut The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The effect of TiW metal barrier layer thickness on voltage-current characteristics of the Cu/TiW/ZrO2/TiN conductive bridge random access memory device was systematically investigated. The change of reset behavior from abrupt decrease to gradual decrease with increasing TiW thickness was observed. Electronic conduction during the forming process was also analyzed to obtain detailed information about the effect of TiW layer thickness on the nature of the conduction phenomenon. The temperature coefficient of resistance of the conductive filament confirms that an electro-chemical metallization (ECM) based conduction was observed in the devices made with a thinner TiW layer. On the other hand, valence change memory (VCM) based conduction was observed with a thick TiW layer. A conduction mechanism is proposed to explain the ECM to VCM conduction transformation phenomenon. Conductive filament Electro-chemical metallization Valence change memory Switching device Zirconium dioxide Titanium tungsten alloy Simanjuntak, Firman Mangasa verfasserin aut Aluguri, Rakesh verfasserin aut Tseng, Tseung-Yuen verfasserin aut Enthalten in Thin solid films Amsterdam [u.a.] : Elsevier, 1967 660, Seite 777-781 Online-Ressource (DE-627)300593503 (DE-600)1482896-0 (DE-576)079165354 nnns volume:660 pages:777-781 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-BBI GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik AR 660 777-781 |
| spelling |
10.1016/j.tsf.2018.03.065 doi (DE-627)ELV001376489 (ELSEVIER)S0040-6090(18)30215-3 DE-627 ger DE-627 rda eng 070 660 DE-600 33.68 bkl Chandrasekaran, Sridhar verfasserin (orcid)0000-0003-4168-611X aut The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The effect of TiW metal barrier layer thickness on voltage-current characteristics of the Cu/TiW/ZrO2/TiN conductive bridge random access memory device was systematically investigated. The change of reset behavior from abrupt decrease to gradual decrease with increasing TiW thickness was observed. Electronic conduction during the forming process was also analyzed to obtain detailed information about the effect of TiW layer thickness on the nature of the conduction phenomenon. The temperature coefficient of resistance of the conductive filament confirms that an electro-chemical metallization (ECM) based conduction was observed in the devices made with a thinner TiW layer. On the other hand, valence change memory (VCM) based conduction was observed with a thick TiW layer. A conduction mechanism is proposed to explain the ECM to VCM conduction transformation phenomenon. Conductive filament Electro-chemical metallization Valence change memory Switching device Zirconium dioxide Titanium tungsten alloy Simanjuntak, Firman Mangasa verfasserin aut Aluguri, Rakesh verfasserin aut Tseng, Tseung-Yuen verfasserin aut Enthalten in Thin solid films Amsterdam [u.a.] : Elsevier, 1967 660, Seite 777-781 Online-Ressource (DE-627)300593503 (DE-600)1482896-0 (DE-576)079165354 nnns volume:660 pages:777-781 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-BBI GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik AR 660 777-781 |
| allfields_unstemmed |
10.1016/j.tsf.2018.03.065 doi (DE-627)ELV001376489 (ELSEVIER)S0040-6090(18)30215-3 DE-627 ger DE-627 rda eng 070 660 DE-600 33.68 bkl Chandrasekaran, Sridhar verfasserin (orcid)0000-0003-4168-611X aut The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The effect of TiW metal barrier layer thickness on voltage-current characteristics of the Cu/TiW/ZrO2/TiN conductive bridge random access memory device was systematically investigated. The change of reset behavior from abrupt decrease to gradual decrease with increasing TiW thickness was observed. Electronic conduction during the forming process was also analyzed to obtain detailed information about the effect of TiW layer thickness on the nature of the conduction phenomenon. The temperature coefficient of resistance of the conductive filament confirms that an electro-chemical metallization (ECM) based conduction was observed in the devices made with a thinner TiW layer. On the other hand, valence change memory (VCM) based conduction was observed with a thick TiW layer. A conduction mechanism is proposed to explain the ECM to VCM conduction transformation phenomenon. Conductive filament Electro-chemical metallization Valence change memory Switching device Zirconium dioxide Titanium tungsten alloy Simanjuntak, Firman Mangasa verfasserin aut Aluguri, Rakesh verfasserin aut Tseng, Tseung-Yuen verfasserin aut Enthalten in Thin solid films Amsterdam [u.a.] : Elsevier, 1967 660, Seite 777-781 Online-Ressource (DE-627)300593503 (DE-600)1482896-0 (DE-576)079165354 nnns volume:660 pages:777-781 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-BBI GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik AR 660 777-781 |
| allfieldsGer |
10.1016/j.tsf.2018.03.065 doi (DE-627)ELV001376489 (ELSEVIER)S0040-6090(18)30215-3 DE-627 ger DE-627 rda eng 070 660 DE-600 33.68 bkl Chandrasekaran, Sridhar verfasserin (orcid)0000-0003-4168-611X aut The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The effect of TiW metal barrier layer thickness on voltage-current characteristics of the Cu/TiW/ZrO2/TiN conductive bridge random access memory device was systematically investigated. The change of reset behavior from abrupt decrease to gradual decrease with increasing TiW thickness was observed. Electronic conduction during the forming process was also analyzed to obtain detailed information about the effect of TiW layer thickness on the nature of the conduction phenomenon. The temperature coefficient of resistance of the conductive filament confirms that an electro-chemical metallization (ECM) based conduction was observed in the devices made with a thinner TiW layer. On the other hand, valence change memory (VCM) based conduction was observed with a thick TiW layer. A conduction mechanism is proposed to explain the ECM to VCM conduction transformation phenomenon. Conductive filament Electro-chemical metallization Valence change memory Switching device Zirconium dioxide Titanium tungsten alloy Simanjuntak, Firman Mangasa verfasserin aut Aluguri, Rakesh verfasserin aut Tseng, Tseung-Yuen verfasserin aut Enthalten in Thin solid films Amsterdam [u.a.] : Elsevier, 1967 660, Seite 777-781 Online-Ressource (DE-627)300593503 (DE-600)1482896-0 (DE-576)079165354 nnns volume:660 pages:777-781 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-BBI GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik AR 660 777-781 |
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10.1016/j.tsf.2018.03.065 doi (DE-627)ELV001376489 (ELSEVIER)S0040-6090(18)30215-3 DE-627 ger DE-627 rda eng 070 660 DE-600 33.68 bkl Chandrasekaran, Sridhar verfasserin (orcid)0000-0003-4168-611X aut The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The effect of TiW metal barrier layer thickness on voltage-current characteristics of the Cu/TiW/ZrO2/TiN conductive bridge random access memory device was systematically investigated. The change of reset behavior from abrupt decrease to gradual decrease with increasing TiW thickness was observed. Electronic conduction during the forming process was also analyzed to obtain detailed information about the effect of TiW layer thickness on the nature of the conduction phenomenon. The temperature coefficient of resistance of the conductive filament confirms that an electro-chemical metallization (ECM) based conduction was observed in the devices made with a thinner TiW layer. On the other hand, valence change memory (VCM) based conduction was observed with a thick TiW layer. A conduction mechanism is proposed to explain the ECM to VCM conduction transformation phenomenon. Conductive filament Electro-chemical metallization Valence change memory Switching device Zirconium dioxide Titanium tungsten alloy Simanjuntak, Firman Mangasa verfasserin aut Aluguri, Rakesh verfasserin aut Tseng, Tseung-Yuen verfasserin aut Enthalten in Thin solid films Amsterdam [u.a.] : Elsevier, 1967 660, Seite 777-781 Online-Ressource (DE-627)300593503 (DE-600)1482896-0 (DE-576)079165354 nnns volume:660 pages:777-781 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-BBI GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik AR 660 777-781 |
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The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO |
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Chandrasekaran, Sridhar |
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Thin solid films |
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eng |
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000 - Computer science, information & general works 600 - Technology |
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2018 |
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Chandrasekaran, Sridhar Simanjuntak, Firman Mangasa Aluguri, Rakesh Tseng, Tseung-Yuen |
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Elektronische Aufsätze |
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Chandrasekaran, Sridhar |
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10.1016/j.tsf.2018.03.065 |
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(ORCID)0000-0003-4168-611X |
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verfasserin |
| title_sort |
the impact of tiw barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in zro |
| title_auth |
The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO |
| abstract |
The effect of TiW metal barrier layer thickness on voltage-current characteristics of the Cu/TiW/ZrO2/TiN conductive bridge random access memory device was systematically investigated. The change of reset behavior from abrupt decrease to gradual decrease with increasing TiW thickness was observed. Electronic conduction during the forming process was also analyzed to obtain detailed information about the effect of TiW layer thickness on the nature of the conduction phenomenon. The temperature coefficient of resistance of the conductive filament confirms that an electro-chemical metallization (ECM) based conduction was observed in the devices made with a thinner TiW layer. On the other hand, valence change memory (VCM) based conduction was observed with a thick TiW layer. A conduction mechanism is proposed to explain the ECM to VCM conduction transformation phenomenon. |
| abstractGer |
The effect of TiW metal barrier layer thickness on voltage-current characteristics of the Cu/TiW/ZrO2/TiN conductive bridge random access memory device was systematically investigated. The change of reset behavior from abrupt decrease to gradual decrease with increasing TiW thickness was observed. Electronic conduction during the forming process was also analyzed to obtain detailed information about the effect of TiW layer thickness on the nature of the conduction phenomenon. The temperature coefficient of resistance of the conductive filament confirms that an electro-chemical metallization (ECM) based conduction was observed in the devices made with a thinner TiW layer. On the other hand, valence change memory (VCM) based conduction was observed with a thick TiW layer. A conduction mechanism is proposed to explain the ECM to VCM conduction transformation phenomenon. |
| abstract_unstemmed |
The effect of TiW metal barrier layer thickness on voltage-current characteristics of the Cu/TiW/ZrO2/TiN conductive bridge random access memory device was systematically investigated. The change of reset behavior from abrupt decrease to gradual decrease with increasing TiW thickness was observed. Electronic conduction during the forming process was also analyzed to obtain detailed information about the effect of TiW layer thickness on the nature of the conduction phenomenon. The temperature coefficient of resistance of the conductive filament confirms that an electro-chemical metallization (ECM) based conduction was observed in the devices made with a thinner TiW layer. On the other hand, valence change memory (VCM) based conduction was observed with a thick TiW layer. A conduction mechanism is proposed to explain the ECM to VCM conduction transformation phenomenon. |
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| title_short |
The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO |
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| author2 |
Simanjuntak, Firman Mangasa Aluguri, Rakesh Tseng, Tseung-Yuen |
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10.1016/j.tsf.2018.03.065 |
| up_date |
2024-07-06T21:09:53.412Z |
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