Nontrivial evolution of the Sb(1 1 1) electronic and atomic structure after ion irradiation

Defects in crystal structure of layered material can modify the surface states. Ion bombardment is a simple way to introduce defects into a crystal lattice in the surface region. Comprehensive scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and photoemission studies are...
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Autor*in:	Chekmazov, S.V. [verfasserIn] Smirnov, A.A. [verfasserIn] Ksenz, A.S. [verfasserIn] Bozhko, S.I. [verfasserIn] Ionov, A.M. [verfasserIn] Protasova, S.G. [verfasserIn] Kapustin, A.A. [verfasserIn] Vilkov, O.Yu. [verfasserIn] Levchenko, E.A. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2018

Schlagwörter:	Peierls transition Surface diffusion Sb(1 1 1) surface

Übergeordnetes Werk:	Enthalten in: Materials letters - New York, NY [u.a.] : Elsevier, 1982, 240, Seite 69-72
Übergeordnetes Werk:	volume:240 ; pages:69-72

DOI / URN:	10.1016/j.matlet.2018.12.074

Katalog-ID:	ELV001657852

Internformat


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520			\|a Defects in crystal structure of layered material can modify the surface states. Ion bombardment is a simple way to introduce defects into a crystal lattice in the surface region. Comprehensive scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and photoemission studies are presented to uncover the impact of ion etching and thermal annealing on the atomic and electronic structure of Sb(1 1 1) surface. We reveal the unusual behavior of the Sb(1 1 1) surface after Ar+ sputtering at 300 K (RT). The 3 nm-sized terraces formed even after a prolonged ion bombardment are established by LEED. Also, an increase in density of states (DOS) at the Fermi edge is detected for the etched Sb(1 1 1) surface due to the ruptured covalent bonds (CBs).
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700	1		\|a Vilkov, O.Yu. \|e verfasserin \|4 aut
700	1		\|a Levchenko, E.A. \|e verfasserin \|4 aut
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publishDate	2018
allfields	10.1016/j.matlet.2018.12.074 doi (DE-627)ELV001657852 (ELSEVIER)S0167-577X(18)32033-0 DE-627 ger DE-627 rda eng 530 600 670 DE-600 51.00 bkl Chekmazov, S.V. verfasserin aut Nontrivial evolution of the Sb(1 1 1) electronic and atomic structure after ion irradiation 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Defects in crystal structure of layered material can modify the surface states. Ion bombardment is a simple way to introduce defects into a crystal lattice in the surface region. Comprehensive scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and photoemission studies are presented to uncover the impact of ion etching and thermal annealing on the atomic and electronic structure of Sb(1 1 1) surface. We reveal the unusual behavior of the Sb(1 1 1) surface after Ar+ sputtering at 300 K (RT). The 3 nm-sized terraces formed even after a prolonged ion bombardment are established by LEED. Also, an increase in density of states (DOS) at the Fermi edge is detected for the etched Sb(1 1 1) surface due to the ruptured covalent bonds (CBs). Peierls transition Surface diffusion Sb(1 1 1) surface Smirnov, A.A. verfasserin aut Ksenz, A.S. verfasserin aut Bozhko, S.I. verfasserin (orcid)0000-0002-9101-8737 aut Ionov, A.M. verfasserin aut Protasova, S.G. verfasserin aut Kapustin, A.A. verfasserin (orcid)0000-0002-2566-1716 aut Vilkov, O.Yu. verfasserin aut Levchenko, E.A. verfasserin aut Enthalten in Materials letters New York, NY [u.a.] : Elsevier, 1982 240, Seite 69-72 Online-Ressource (DE-627)302719407 (DE-600)1491964-3 (DE-576)259483974 1873-4979 nnns volume:240 pages:69-72 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.00 Werkstoffkunde: Allgemeines AR 240 69-72
spelling	10.1016/j.matlet.2018.12.074 doi (DE-627)ELV001657852 (ELSEVIER)S0167-577X(18)32033-0 DE-627 ger DE-627 rda eng 530 600 670 DE-600 51.00 bkl Chekmazov, S.V. verfasserin aut Nontrivial evolution of the Sb(1 1 1) electronic and atomic structure after ion irradiation 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Defects in crystal structure of layered material can modify the surface states. Ion bombardment is a simple way to introduce defects into a crystal lattice in the surface region. Comprehensive scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and photoemission studies are presented to uncover the impact of ion etching and thermal annealing on the atomic and electronic structure of Sb(1 1 1) surface. We reveal the unusual behavior of the Sb(1 1 1) surface after Ar+ sputtering at 300 K (RT). The 3 nm-sized terraces formed even after a prolonged ion bombardment are established by LEED. Also, an increase in density of states (DOS) at the Fermi edge is detected for the etched Sb(1 1 1) surface due to the ruptured covalent bonds (CBs). Peierls transition Surface diffusion Sb(1 1 1) surface Smirnov, A.A. verfasserin aut Ksenz, A.S. verfasserin aut Bozhko, S.I. verfasserin (orcid)0000-0002-9101-8737 aut Ionov, A.M. verfasserin aut Protasova, S.G. verfasserin aut Kapustin, A.A. verfasserin (orcid)0000-0002-2566-1716 aut Vilkov, O.Yu. verfasserin aut Levchenko, E.A. verfasserin aut Enthalten in Materials letters New York, NY [u.a.] : Elsevier, 1982 240, Seite 69-72 Online-Ressource (DE-627)302719407 (DE-600)1491964-3 (DE-576)259483974 1873-4979 nnns volume:240 pages:69-72 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.00 Werkstoffkunde: Allgemeines AR 240 69-72
allfields_unstemmed	10.1016/j.matlet.2018.12.074 doi (DE-627)ELV001657852 (ELSEVIER)S0167-577X(18)32033-0 DE-627 ger DE-627 rda eng 530 600 670 DE-600 51.00 bkl Chekmazov, S.V. verfasserin aut Nontrivial evolution of the Sb(1 1 1) electronic and atomic structure after ion irradiation 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Defects in crystal structure of layered material can modify the surface states. Ion bombardment is a simple way to introduce defects into a crystal lattice in the surface region. Comprehensive scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and photoemission studies are presented to uncover the impact of ion etching and thermal annealing on the atomic and electronic structure of Sb(1 1 1) surface. We reveal the unusual behavior of the Sb(1 1 1) surface after Ar+ sputtering at 300 K (RT). The 3 nm-sized terraces formed even after a prolonged ion bombardment are established by LEED. Also, an increase in density of states (DOS) at the Fermi edge is detected for the etched Sb(1 1 1) surface due to the ruptured covalent bonds (CBs). Peierls transition Surface diffusion Sb(1 1 1) surface Smirnov, A.A. verfasserin aut Ksenz, A.S. verfasserin aut Bozhko, S.I. verfasserin (orcid)0000-0002-9101-8737 aut Ionov, A.M. verfasserin aut Protasova, S.G. verfasserin aut Kapustin, A.A. verfasserin (orcid)0000-0002-2566-1716 aut Vilkov, O.Yu. verfasserin aut Levchenko, E.A. verfasserin aut Enthalten in Materials letters New York, NY [u.a.] : Elsevier, 1982 240, Seite 69-72 Online-Ressource (DE-627)302719407 (DE-600)1491964-3 (DE-576)259483974 1873-4979 nnns volume:240 pages:69-72 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.00 Werkstoffkunde: Allgemeines AR 240 69-72
allfieldsGer	10.1016/j.matlet.2018.12.074 doi (DE-627)ELV001657852 (ELSEVIER)S0167-577X(18)32033-0 DE-627 ger DE-627 rda eng 530 600 670 DE-600 51.00 bkl Chekmazov, S.V. verfasserin aut Nontrivial evolution of the Sb(1 1 1) electronic and atomic structure after ion irradiation 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Defects in crystal structure of layered material can modify the surface states. Ion bombardment is a simple way to introduce defects into a crystal lattice in the surface region. Comprehensive scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and photoemission studies are presented to uncover the impact of ion etching and thermal annealing on the atomic and electronic structure of Sb(1 1 1) surface. We reveal the unusual behavior of the Sb(1 1 1) surface after Ar+ sputtering at 300 K (RT). The 3 nm-sized terraces formed even after a prolonged ion bombardment are established by LEED. Also, an increase in density of states (DOS) at the Fermi edge is detected for the etched Sb(1 1 1) surface due to the ruptured covalent bonds (CBs). Peierls transition Surface diffusion Sb(1 1 1) surface Smirnov, A.A. verfasserin aut Ksenz, A.S. verfasserin aut Bozhko, S.I. verfasserin (orcid)0000-0002-9101-8737 aut Ionov, A.M. verfasserin aut Protasova, S.G. verfasserin aut Kapustin, A.A. verfasserin (orcid)0000-0002-2566-1716 aut Vilkov, O.Yu. verfasserin aut Levchenko, E.A. verfasserin aut Enthalten in Materials letters New York, NY [u.a.] : Elsevier, 1982 240, Seite 69-72 Online-Ressource (DE-627)302719407 (DE-600)1491964-3 (DE-576)259483974 1873-4979 nnns volume:240 pages:69-72 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.00 Werkstoffkunde: Allgemeines AR 240 69-72
allfieldsSound	10.1016/j.matlet.2018.12.074 doi (DE-627)ELV001657852 (ELSEVIER)S0167-577X(18)32033-0 DE-627 ger DE-627 rda eng 530 600 670 DE-600 51.00 bkl Chekmazov, S.V. verfasserin aut Nontrivial evolution of the Sb(1 1 1) electronic and atomic structure after ion irradiation 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Defects in crystal structure of layered material can modify the surface states. Ion bombardment is a simple way to introduce defects into a crystal lattice in the surface region. Comprehensive scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and photoemission studies are presented to uncover the impact of ion etching and thermal annealing on the atomic and electronic structure of Sb(1 1 1) surface. We reveal the unusual behavior of the Sb(1 1 1) surface after Ar+ sputtering at 300 K (RT). The 3 nm-sized terraces formed even after a prolonged ion bombardment are established by LEED. Also, an increase in density of states (DOS) at the Fermi edge is detected for the etched Sb(1 1 1) surface due to the ruptured covalent bonds (CBs). Peierls transition Surface diffusion Sb(1 1 1) surface Smirnov, A.A. verfasserin aut Ksenz, A.S. verfasserin aut Bozhko, S.I. verfasserin (orcid)0000-0002-9101-8737 aut Ionov, A.M. verfasserin aut Protasova, S.G. verfasserin aut Kapustin, A.A. verfasserin (orcid)0000-0002-2566-1716 aut Vilkov, O.Yu. verfasserin aut Levchenko, E.A. verfasserin aut Enthalten in Materials letters New York, NY [u.a.] : Elsevier, 1982 240, Seite 69-72 Online-Ressource (DE-627)302719407 (DE-600)1491964-3 (DE-576)259483974 1873-4979 nnns volume:240 pages:69-72 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.00 Werkstoffkunde: Allgemeines AR 240 69-72
language	English
source	Enthalten in Materials letters 240, Seite 69-72 volume:240 pages:69-72
sourceStr	Enthalten in Materials letters 240, Seite 69-72 volume:240 pages:69-72
format_phy_str_mv	Article
bklname	Werkstoffkunde: Allgemeines
institution	findex.gbv.de
topic_facet	Peierls transition Surface diffusion Sb(1 1 1) surface
dewey-raw	530
isfreeaccess_bool	false
container_title	Materials letters
authorswithroles_txt_mv	Chekmazov, S.V. @@aut@@ Smirnov, A.A. @@aut@@ Ksenz, A.S. @@aut@@ Bozhko, S.I. @@aut@@ Ionov, A.M. @@aut@@ Protasova, S.G. @@aut@@ Kapustin, A.A. @@aut@@ Vilkov, O.Yu. @@aut@@ Levchenko, E.A. @@aut@@
publishDateDaySort_date	2018-01-01T00:00:00Z
hierarchy_top_id	302719407
dewey-sort	3530
id	ELV001657852
language_de	englisch
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author	Chekmazov, S.V.
spellingShingle	Chekmazov, S.V. ddc 530 bkl 51.00 misc Peierls transition misc Surface diffusion misc Sb(1 1 1) surface Nontrivial evolution of the Sb(1 1 1) electronic and atomic structure after ion irradiation
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topic_title	530 600 670 DE-600 51.00 bkl Nontrivial evolution of the Sb(1 1 1) electronic and atomic structure after ion irradiation Peierls transition Surface diffusion Sb(1 1 1) surface
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title	Nontrivial evolution of the Sb(1 1 1) electronic and atomic structure after ion irradiation
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title_full	Nontrivial evolution of the Sb(1 1 1) electronic and atomic structure after ion irradiation
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author_browse	Chekmazov, S.V. Smirnov, A.A. Ksenz, A.S. Bozhko, S.I. Ionov, A.M. Protasova, S.G. Kapustin, A.A. Vilkov, O.Yu. Levchenko, E.A.
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title_sort	nontrivial evolution of the sb(1 1 1) electronic and atomic structure after ion irradiation
title_auth	Nontrivial evolution of the Sb(1 1 1) electronic and atomic structure after ion irradiation
abstract	Defects in crystal structure of layered material can modify the surface states. Ion bombardment is a simple way to introduce defects into a crystal lattice in the surface region. Comprehensive scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and photoemission studies are presented to uncover the impact of ion etching and thermal annealing on the atomic and electronic structure of Sb(1 1 1) surface. We reveal the unusual behavior of the Sb(1 1 1) surface after Ar+ sputtering at 300 K (RT). The 3 nm-sized terraces formed even after a prolonged ion bombardment are established by LEED. Also, an increase in density of states (DOS) at the Fermi edge is detected for the etched Sb(1 1 1) surface due to the ruptured covalent bonds (CBs).
abstractGer	Defects in crystal structure of layered material can modify the surface states. Ion bombardment is a simple way to introduce defects into a crystal lattice in the surface region. Comprehensive scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and photoemission studies are presented to uncover the impact of ion etching and thermal annealing on the atomic and electronic structure of Sb(1 1 1) surface. We reveal the unusual behavior of the Sb(1 1 1) surface after Ar+ sputtering at 300 K (RT). The 3 nm-sized terraces formed even after a prolonged ion bombardment are established by LEED. Also, an increase in density of states (DOS) at the Fermi edge is detected for the etched Sb(1 1 1) surface due to the ruptured covalent bonds (CBs).
abstract_unstemmed	Defects in crystal structure of layered material can modify the surface states. Ion bombardment is a simple way to introduce defects into a crystal lattice in the surface region. Comprehensive scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and photoemission studies are presented to uncover the impact of ion etching and thermal annealing on the atomic and electronic structure of Sb(1 1 1) surface. We reveal the unusual behavior of the Sb(1 1 1) surface after Ar+ sputtering at 300 K (RT). The 3 nm-sized terraces formed even after a prolonged ion bombardment are established by LEED. Also, an increase in density of states (DOS) at the Fermi edge is detected for the etched Sb(1 1 1) surface due to the ruptured covalent bonds (CBs).
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title_short	Nontrivial evolution of the Sb(1 1 1) electronic and atomic structure after ion irradiation
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author2	Smirnov, A.A. Ksenz, A.S. Bozhko, S.I. Ionov, A.M. Protasova, S.G. Kapustin, A.A. Vilkov, O.Yu Levchenko, E.A.
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up_date	2024-07-06T22:07:48.034Z
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Nontrivial evolution of the Sb(1 1 1) electronic and atomic structure after ion irradiation

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Nontrivial evolution of the Sb(1 1 1) electronic and atomic structure after ion irradiation