Doping-induced giant rectification and negative differential conductance (NDC) behaviors in zigzag graphene nano-ribbon junction

By p-type and n-type doping on the electrode edges of V-notched zigzag graphene nano-ribbons (ZGNRs), four V-notched ZGNR-based PN-junctions are designed theoretically. The electronic transport properties of the doped and un-doped V-notched ZGNRs are studied applying non-equilibrium Green's fun...
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Gespeichert in:

Autor*in:	Fu, Huan-Yan [verfasserIn] Sun, Feng [verfasserIn] Liu, Ran [verfasserIn] Suo, Yu-Qing [verfasserIn] Bi, Jun-Jie [verfasserIn] Wang, Chuan-Kui [verfasserIn] Li, Zong-Liang [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2018

Schlagwörter:	Graphene nano-ribbon junction Boron and nitrogen doping Giant rectification Negative differential conductance

Übergeordnetes Werk:	Enthalten in: Physics letters / A - Amsterdam : North-Holland Publ., 1967, 383, Seite 867-872
Übergeordnetes Werk:	volume:383 ; pages:867-872

DOI / URN:	10.1016/j.physleta.2018.12.001

Katalog-ID:	ELV001687697

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245	1	0	\|a Doping-induced giant rectification and negative differential conductance (NDC) behaviors in zigzag graphene nano-ribbon junction
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520			\|a By p-type and n-type doping on the electrode edges of V-notched zigzag graphene nano-ribbons (ZGNRs), four V-notched ZGNR-based PN-junctions are designed theoretically. The electronic transport properties of the doped and un-doped V-notched ZGNRs are studied applying non-equilibrium Green's function method combined with the density functional theory. The numerical results show that, the doped systems are less conductive than the un-doped system, because after doping the transition states become localized. To our surprise, the ZGNR-based PN-junctions do not show obvious rectification by purely doping the boron atoms and nitrogen atoms on the edges of two ZGNR electrodes respectively. However, after hydrogenated the doped boron atoms and nitrogen atoms, the ZGNR systems present giant rectifications with the maximum rectification ratios up to 10 6 ∼ 10 7 , which attributed to the vanishing of overlap between left-electrode sub-band and right-electrode sub-band in the negative bias regime after the doped boron and nitrogen atoms being hydrogenated. Due to the same reason, the hydrogenated doping systems also show large negative differential conductance behaviors.
650		4	\|a Graphene nano-ribbon junction
650		4	\|a Boron and nitrogen doping
650		4	\|a Giant rectification
650		4	\|a Negative differential conductance
700	1		\|a Sun, Feng \|e verfasserin \|4 aut
700	1		\|a Liu, Ran \|e verfasserin \|4 aut
700	1		\|a Suo, Yu-Qing \|e verfasserin \|4 aut
700	1		\|a Bi, Jun-Jie \|e verfasserin \|4 aut
700	1		\|a Wang, Chuan-Kui \|e verfasserin \|4 aut
700	1		\|a Li, Zong-Liang \|e verfasserin \|0 (orcid)0000-0003-2519-924X \|4 aut
773	0	8	\|i Enthalten in \|t Physics letters / A \|d Amsterdam : North-Holland Publ., 1967 \|g 383, Seite 867-872 \|h Online-Ressource \|w (DE-627)266015298 \|w (DE-600)1466603-0 \|w (DE-576)074959905 \|x 1873-2429 \|7 nnns
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publishDate	2018
allfields	10.1016/j.physleta.2018.12.001 doi (DE-627)ELV001687697 (ELSEVIER)S0375-9601(18)31201-5 DE-627 ger DE-627 rda eng 530 DE-600 33.00 bkl Fu, Huan-Yan verfasserin aut Doping-induced giant rectification and negative differential conductance (NDC) behaviors in zigzag graphene nano-ribbon junction 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier By p-type and n-type doping on the electrode edges of V-notched zigzag graphene nano-ribbons (ZGNRs), four V-notched ZGNR-based PN-junctions are designed theoretically. The electronic transport properties of the doped and un-doped V-notched ZGNRs are studied applying non-equilibrium Green's function method combined with the density functional theory. The numerical results show that, the doped systems are less conductive than the un-doped system, because after doping the transition states become localized. To our surprise, the ZGNR-based PN-junctions do not show obvious rectification by purely doping the boron atoms and nitrogen atoms on the edges of two ZGNR electrodes respectively. However, after hydrogenated the doped boron atoms and nitrogen atoms, the ZGNR systems present giant rectifications with the maximum rectification ratios up to 10 6 ∼ 10 7 , which attributed to the vanishing of overlap between left-electrode sub-band and right-electrode sub-band in the negative bias regime after the doped boron and nitrogen atoms being hydrogenated. Due to the same reason, the hydrogenated doping systems also show large negative differential conductance behaviors. Graphene nano-ribbon junction Boron and nitrogen doping Giant rectification Negative differential conductance Sun, Feng verfasserin aut Liu, Ran verfasserin aut Suo, Yu-Qing verfasserin aut Bi, Jun-Jie verfasserin aut Wang, Chuan-Kui verfasserin aut Li, Zong-Liang verfasserin (orcid)0000-0003-2519-924X aut Enthalten in Physics letters / A Amsterdam : North-Holland Publ., 1967 383, Seite 867-872 Online-Ressource (DE-627)266015298 (DE-600)1466603-0 (DE-576)074959905 1873-2429 nnns volume:383 pages:867-872 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.00 Physik: Allgemeines AR 383 867-872
spelling	10.1016/j.physleta.2018.12.001 doi (DE-627)ELV001687697 (ELSEVIER)S0375-9601(18)31201-5 DE-627 ger DE-627 rda eng 530 DE-600 33.00 bkl Fu, Huan-Yan verfasserin aut Doping-induced giant rectification and negative differential conductance (NDC) behaviors in zigzag graphene nano-ribbon junction 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier By p-type and n-type doping on the electrode edges of V-notched zigzag graphene nano-ribbons (ZGNRs), four V-notched ZGNR-based PN-junctions are designed theoretically. The electronic transport properties of the doped and un-doped V-notched ZGNRs are studied applying non-equilibrium Green's function method combined with the density functional theory. The numerical results show that, the doped systems are less conductive than the un-doped system, because after doping the transition states become localized. To our surprise, the ZGNR-based PN-junctions do not show obvious rectification by purely doping the boron atoms and nitrogen atoms on the edges of two ZGNR electrodes respectively. However, after hydrogenated the doped boron atoms and nitrogen atoms, the ZGNR systems present giant rectifications with the maximum rectification ratios up to 10 6 ∼ 10 7 , which attributed to the vanishing of overlap between left-electrode sub-band and right-electrode sub-band in the negative bias regime after the doped boron and nitrogen atoms being hydrogenated. Due to the same reason, the hydrogenated doping systems also show large negative differential conductance behaviors. Graphene nano-ribbon junction Boron and nitrogen doping Giant rectification Negative differential conductance Sun, Feng verfasserin aut Liu, Ran verfasserin aut Suo, Yu-Qing verfasserin aut Bi, Jun-Jie verfasserin aut Wang, Chuan-Kui verfasserin aut Li, Zong-Liang verfasserin (orcid)0000-0003-2519-924X aut Enthalten in Physics letters / A Amsterdam : North-Holland Publ., 1967 383, Seite 867-872 Online-Ressource (DE-627)266015298 (DE-600)1466603-0 (DE-576)074959905 1873-2429 nnns volume:383 pages:867-872 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.00 Physik: Allgemeines AR 383 867-872
allfields_unstemmed	10.1016/j.physleta.2018.12.001 doi (DE-627)ELV001687697 (ELSEVIER)S0375-9601(18)31201-5 DE-627 ger DE-627 rda eng 530 DE-600 33.00 bkl Fu, Huan-Yan verfasserin aut Doping-induced giant rectification and negative differential conductance (NDC) behaviors in zigzag graphene nano-ribbon junction 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier By p-type and n-type doping on the electrode edges of V-notched zigzag graphene nano-ribbons (ZGNRs), four V-notched ZGNR-based PN-junctions are designed theoretically. The electronic transport properties of the doped and un-doped V-notched ZGNRs are studied applying non-equilibrium Green's function method combined with the density functional theory. The numerical results show that, the doped systems are less conductive than the un-doped system, because after doping the transition states become localized. To our surprise, the ZGNR-based PN-junctions do not show obvious rectification by purely doping the boron atoms and nitrogen atoms on the edges of two ZGNR electrodes respectively. However, after hydrogenated the doped boron atoms and nitrogen atoms, the ZGNR systems present giant rectifications with the maximum rectification ratios up to 10 6 ∼ 10 7 , which attributed to the vanishing of overlap between left-electrode sub-band and right-electrode sub-band in the negative bias regime after the doped boron and nitrogen atoms being hydrogenated. Due to the same reason, the hydrogenated doping systems also show large negative differential conductance behaviors. Graphene nano-ribbon junction Boron and nitrogen doping Giant rectification Negative differential conductance Sun, Feng verfasserin aut Liu, Ran verfasserin aut Suo, Yu-Qing verfasserin aut Bi, Jun-Jie verfasserin aut Wang, Chuan-Kui verfasserin aut Li, Zong-Liang verfasserin (orcid)0000-0003-2519-924X aut Enthalten in Physics letters / A Amsterdam : North-Holland Publ., 1967 383, Seite 867-872 Online-Ressource (DE-627)266015298 (DE-600)1466603-0 (DE-576)074959905 1873-2429 nnns volume:383 pages:867-872 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.00 Physik: Allgemeines AR 383 867-872
allfieldsGer	10.1016/j.physleta.2018.12.001 doi (DE-627)ELV001687697 (ELSEVIER)S0375-9601(18)31201-5 DE-627 ger DE-627 rda eng 530 DE-600 33.00 bkl Fu, Huan-Yan verfasserin aut Doping-induced giant rectification and negative differential conductance (NDC) behaviors in zigzag graphene nano-ribbon junction 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier By p-type and n-type doping on the electrode edges of V-notched zigzag graphene nano-ribbons (ZGNRs), four V-notched ZGNR-based PN-junctions are designed theoretically. The electronic transport properties of the doped and un-doped V-notched ZGNRs are studied applying non-equilibrium Green's function method combined with the density functional theory. The numerical results show that, the doped systems are less conductive than the un-doped system, because after doping the transition states become localized. To our surprise, the ZGNR-based PN-junctions do not show obvious rectification by purely doping the boron atoms and nitrogen atoms on the edges of two ZGNR electrodes respectively. However, after hydrogenated the doped boron atoms and nitrogen atoms, the ZGNR systems present giant rectifications with the maximum rectification ratios up to 10 6 ∼ 10 7 , which attributed to the vanishing of overlap between left-electrode sub-band and right-electrode sub-band in the negative bias regime after the doped boron and nitrogen atoms being hydrogenated. Due to the same reason, the hydrogenated doping systems also show large negative differential conductance behaviors. Graphene nano-ribbon junction Boron and nitrogen doping Giant rectification Negative differential conductance Sun, Feng verfasserin aut Liu, Ran verfasserin aut Suo, Yu-Qing verfasserin aut Bi, Jun-Jie verfasserin aut Wang, Chuan-Kui verfasserin aut Li, Zong-Liang verfasserin (orcid)0000-0003-2519-924X aut Enthalten in Physics letters / A Amsterdam : North-Holland Publ., 1967 383, Seite 867-872 Online-Ressource (DE-627)266015298 (DE-600)1466603-0 (DE-576)074959905 1873-2429 nnns volume:383 pages:867-872 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.00 Physik: Allgemeines AR 383 867-872
allfieldsSound	10.1016/j.physleta.2018.12.001 doi (DE-627)ELV001687697 (ELSEVIER)S0375-9601(18)31201-5 DE-627 ger DE-627 rda eng 530 DE-600 33.00 bkl Fu, Huan-Yan verfasserin aut Doping-induced giant rectification and negative differential conductance (NDC) behaviors in zigzag graphene nano-ribbon junction 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier By p-type and n-type doping on the electrode edges of V-notched zigzag graphene nano-ribbons (ZGNRs), four V-notched ZGNR-based PN-junctions are designed theoretically. The electronic transport properties of the doped and un-doped V-notched ZGNRs are studied applying non-equilibrium Green's function method combined with the density functional theory. The numerical results show that, the doped systems are less conductive than the un-doped system, because after doping the transition states become localized. To our surprise, the ZGNR-based PN-junctions do not show obvious rectification by purely doping the boron atoms and nitrogen atoms on the edges of two ZGNR electrodes respectively. However, after hydrogenated the doped boron atoms and nitrogen atoms, the ZGNR systems present giant rectifications with the maximum rectification ratios up to 10 6 ∼ 10 7 , which attributed to the vanishing of overlap between left-electrode sub-band and right-electrode sub-band in the negative bias regime after the doped boron and nitrogen atoms being hydrogenated. Due to the same reason, the hydrogenated doping systems also show large negative differential conductance behaviors. Graphene nano-ribbon junction Boron and nitrogen doping Giant rectification Negative differential conductance Sun, Feng verfasserin aut Liu, Ran verfasserin aut Suo, Yu-Qing verfasserin aut Bi, Jun-Jie verfasserin aut Wang, Chuan-Kui verfasserin aut Li, Zong-Liang verfasserin (orcid)0000-0003-2519-924X aut Enthalten in Physics letters / A Amsterdam : North-Holland Publ., 1967 383, Seite 867-872 Online-Ressource (DE-627)266015298 (DE-600)1466603-0 (DE-576)074959905 1873-2429 nnns volume:383 pages:867-872 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.00 Physik: Allgemeines AR 383 867-872
language	English
source	Enthalten in Physics letters / A 383, Seite 867-872 volume:383 pages:867-872
sourceStr	Enthalten in Physics letters / A 383, Seite 867-872 volume:383 pages:867-872
format_phy_str_mv	Article
bklname	Physik: Allgemeines
institution	findex.gbv.de
topic_facet	Graphene nano-ribbon junction Boron and nitrogen doping Giant rectification Negative differential conductance
dewey-raw	530
isfreeaccess_bool	false
container_title	Physics letters / A
authorswithroles_txt_mv	Fu, Huan-Yan @@aut@@ Sun, Feng @@aut@@ Liu, Ran @@aut@@ Suo, Yu-Qing @@aut@@ Bi, Jun-Jie @@aut@@ Wang, Chuan-Kui @@aut@@ Li, Zong-Liang @@aut@@
publishDateDaySort_date	2018-01-01T00:00:00Z
hierarchy_top_id	266015298
dewey-sort	3530
id	ELV001687697
language_de	englisch
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author	Fu, Huan-Yan
spellingShingle	Fu, Huan-Yan ddc 530 bkl 33.00 misc Graphene nano-ribbon junction misc Boron and nitrogen doping misc Giant rectification misc Negative differential conductance Doping-induced giant rectification and negative differential conductance (NDC) behaviors in zigzag graphene nano-ribbon junction
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topic_title	530 DE-600 33.00 bkl Doping-induced giant rectification and negative differential conductance (NDC) behaviors in zigzag graphene nano-ribbon junction Graphene nano-ribbon junction Boron and nitrogen doping Giant rectification Negative differential conductance
topic	ddc 530 bkl 33.00 misc Graphene nano-ribbon junction misc Boron and nitrogen doping misc Giant rectification misc Negative differential conductance
topic_unstemmed	ddc 530 bkl 33.00 misc Graphene nano-ribbon junction misc Boron and nitrogen doping misc Giant rectification misc Negative differential conductance
topic_browse	ddc 530 bkl 33.00 misc Graphene nano-ribbon junction misc Boron and nitrogen doping misc Giant rectification misc Negative differential conductance
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title	Doping-induced giant rectification and negative differential conductance (NDC) behaviors in zigzag graphene nano-ribbon junction
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title_full	Doping-induced giant rectification and negative differential conductance (NDC) behaviors in zigzag graphene nano-ribbon junction
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author_browse	Fu, Huan-Yan Sun, Feng Liu, Ran Suo, Yu-Qing Bi, Jun-Jie Wang, Chuan-Kui Li, Zong-Liang
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title_sort	doping-induced giant rectification and negative differential conductance (ndc) behaviors in zigzag graphene nano-ribbon junction
title_auth	Doping-induced giant rectification and negative differential conductance (NDC) behaviors in zigzag graphene nano-ribbon junction
abstract	By p-type and n-type doping on the electrode edges of V-notched zigzag graphene nano-ribbons (ZGNRs), four V-notched ZGNR-based PN-junctions are designed theoretically. The electronic transport properties of the doped and un-doped V-notched ZGNRs are studied applying non-equilibrium Green's function method combined with the density functional theory. The numerical results show that, the doped systems are less conductive than the un-doped system, because after doping the transition states become localized. To our surprise, the ZGNR-based PN-junctions do not show obvious rectification by purely doping the boron atoms and nitrogen atoms on the edges of two ZGNR electrodes respectively. However, after hydrogenated the doped boron atoms and nitrogen atoms, the ZGNR systems present giant rectifications with the maximum rectification ratios up to 10 6 ∼ 10 7 , which attributed to the vanishing of overlap between left-electrode sub-band and right-electrode sub-band in the negative bias regime after the doped boron and nitrogen atoms being hydrogenated. Due to the same reason, the hydrogenated doping systems also show large negative differential conductance behaviors.
abstractGer	By p-type and n-type doping on the electrode edges of V-notched zigzag graphene nano-ribbons (ZGNRs), four V-notched ZGNR-based PN-junctions are designed theoretically. The electronic transport properties of the doped and un-doped V-notched ZGNRs are studied applying non-equilibrium Green's function method combined with the density functional theory. The numerical results show that, the doped systems are less conductive than the un-doped system, because after doping the transition states become localized. To our surprise, the ZGNR-based PN-junctions do not show obvious rectification by purely doping the boron atoms and nitrogen atoms on the edges of two ZGNR electrodes respectively. However, after hydrogenated the doped boron atoms and nitrogen atoms, the ZGNR systems present giant rectifications with the maximum rectification ratios up to 10 6 ∼ 10 7 , which attributed to the vanishing of overlap between left-electrode sub-band and right-electrode sub-band in the negative bias regime after the doped boron and nitrogen atoms being hydrogenated. Due to the same reason, the hydrogenated doping systems also show large negative differential conductance behaviors.
abstract_unstemmed	By p-type and n-type doping on the electrode edges of V-notched zigzag graphene nano-ribbons (ZGNRs), four V-notched ZGNR-based PN-junctions are designed theoretically. The electronic transport properties of the doped and un-doped V-notched ZGNRs are studied applying non-equilibrium Green's function method combined with the density functional theory. The numerical results show that, the doped systems are less conductive than the un-doped system, because after doping the transition states become localized. To our surprise, the ZGNR-based PN-junctions do not show obvious rectification by purely doping the boron atoms and nitrogen atoms on the edges of two ZGNR electrodes respectively. However, after hydrogenated the doped boron atoms and nitrogen atoms, the ZGNR systems present giant rectifications with the maximum rectification ratios up to 10 6 ∼ 10 7 , which attributed to the vanishing of overlap between left-electrode sub-band and right-electrode sub-band in the negative bias regime after the doped boron and nitrogen atoms being hydrogenated. Due to the same reason, the hydrogenated doping systems also show large negative differential conductance behaviors.
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title_short	Doping-induced giant rectification and negative differential conductance (NDC) behaviors in zigzag graphene nano-ribbon junction
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author2	Sun, Feng Liu, Ran Suo, Yu-Qing Bi, Jun-Jie Wang, Chuan-Kui Li, Zong-Liang
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up_date	2024-07-06T22:13:53.691Z
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Doping-induced giant rectification and negative differential conductance (NDC) behaviors in zigzag graphene nano-ribbon junction

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