Tin-incorporated nanostructured copper indium oxide delafossite thin films: Structural, electrical and optical analysis
Single phase polycrystalline Sn-doped CuInO2 thin films are prepared by the oxygen plasma enhanced reactive evaporation method. X-ray diffraction indicates a preferential orientation of crystallites along the (006) plane on doping while energy dispersive analysis of X-rays and atomic force microscop...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Nair, Bindu G. [verfasserIn] Joseph, Julie Ann [verfasserIn] Kellner, Z.T. [verfasserIn] Sharma, Vikash [verfasserIn] Remillard, S.K. [verfasserIn] DeYoung, P.A. [verfasserIn] Okram, G.S. [verfasserIn] Ganesan, V. [verfasserIn] Philip, Rachel Reena [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2018 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of alloys and compounds - Lausanne : Elsevier, 1991, 746, Seite 435-444 |
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| Übergeordnetes Werk: |
volume:746 ; pages:435-444 |
| DOI / URN: |
10.1016/j.jallcom.2018.02.305 |
|---|
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ELV001703919 |
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| 245 | 1 | 0 | |a Tin-incorporated nanostructured copper indium oxide delafossite thin films: Structural, electrical and optical analysis |
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| 520 | |a Single phase polycrystalline Sn-doped CuInO2 thin films are prepared by the oxygen plasma enhanced reactive evaporation method. X-ray diffraction indicates a preferential orientation of crystallites along the (006) plane on doping while energy dispersive analysis of X-rays and atomic force microscopy are employed to appraise the composition and morphology of the films, respectively. Remarkably, about 2-3 orders of magnitude enhancement in their electrical conductivity than that reported till date is observed. Further, the Sn-doped thin films possess 2-3 orders of magnitude higher carrier concentration (1018-1019/cm3) than undoped films that is associated with a drastic reduction in mobility. Moreover, different conduction mechanisms possible at different temperature regions ranging from around 55 K–450 K are studied in detail. While the transparency of the films is increased from 43% to 85% on doping, the optical band gap decreases from 3.83 eV to 3.5 eV. | ||
| 650 | 4 | |a Thin films | |
| 650 | 4 | |a Delafossite | |
| 650 | 4 | |a X-ray diffraction | |
| 650 | 4 | |a Electrical conductivity | |
| 650 | 4 | |a Transmittance | |
| 650 | 4 | |a Optical band gap | |
| 700 | 1 | |a Joseph, Julie Ann |e verfasserin |4 aut | |
| 700 | 1 | |a Kellner, Z.T. |e verfasserin |0 (orcid)0000-0001-7165-3867 |4 aut | |
| 700 | 1 | |a Sharma, Vikash |e verfasserin |4 aut | |
| 700 | 1 | |a Remillard, S.K. |e verfasserin |4 aut | |
| 700 | 1 | |a DeYoung, P.A. |e verfasserin |4 aut | |
| 700 | 1 | |a Okram, G.S. |e verfasserin |0 (orcid)0000-0002-0060-8556 |4 aut | |
| 700 | 1 | |a Ganesan, V. |e verfasserin |4 aut | |
| 700 | 1 | |a Philip, Rachel Reena |e verfasserin |4 aut | |
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10.1016/j.jallcom.2018.02.305 doi (DE-627)ELV001703919 (ELSEVIER)S0925-8388(18)30795-3 DE-627 ger DE-627 rda eng 670 540 DE-600 51.54 bkl 33.61 bkl 35.90 bkl Nair, Bindu G. verfasserin aut Tin-incorporated nanostructured copper indium oxide delafossite thin films: Structural, electrical and optical analysis 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Single phase polycrystalline Sn-doped CuInO2 thin films are prepared by the oxygen plasma enhanced reactive evaporation method. X-ray diffraction indicates a preferential orientation of crystallites along the (006) plane on doping while energy dispersive analysis of X-rays and atomic force microscopy are employed to appraise the composition and morphology of the films, respectively. Remarkably, about 2-3 orders of magnitude enhancement in their electrical conductivity than that reported till date is observed. Further, the Sn-doped thin films possess 2-3 orders of magnitude higher carrier concentration (1018-1019/cm3) than undoped films that is associated with a drastic reduction in mobility. Moreover, different conduction mechanisms possible at different temperature regions ranging from around 55 K–450 K are studied in detail. While the transparency of the films is increased from 43% to 85% on doping, the optical band gap decreases from 3.83 eV to 3.5 eV. Thin films Delafossite X-ray diffraction Electrical conductivity Transmittance Optical band gap Joseph, Julie Ann verfasserin aut Kellner, Z.T. verfasserin (orcid)0000-0001-7165-3867 aut Sharma, Vikash verfasserin aut Remillard, S.K. verfasserin aut DeYoung, P.A. verfasserin aut Okram, G.S. verfasserin (orcid)0000-0002-0060-8556 aut Ganesan, V. verfasserin aut Philip, Rachel Reena verfasserin aut Enthalten in Journal of alloys and compounds Lausanne : Elsevier, 1991 746, Seite 435-444 Online-Ressource (DE-627)320504646 (DE-600)2012675-X (DE-576)098615009 nnns volume:746 pages:435-444 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.54 Nichteisenmetalle und ihre Legierungen 33.61 Festkörperphysik 35.90 Festkörperchemie AR 746 435-444 |
| spelling |
10.1016/j.jallcom.2018.02.305 doi (DE-627)ELV001703919 (ELSEVIER)S0925-8388(18)30795-3 DE-627 ger DE-627 rda eng 670 540 DE-600 51.54 bkl 33.61 bkl 35.90 bkl Nair, Bindu G. verfasserin aut Tin-incorporated nanostructured copper indium oxide delafossite thin films: Structural, electrical and optical analysis 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Single phase polycrystalline Sn-doped CuInO2 thin films are prepared by the oxygen plasma enhanced reactive evaporation method. X-ray diffraction indicates a preferential orientation of crystallites along the (006) plane on doping while energy dispersive analysis of X-rays and atomic force microscopy are employed to appraise the composition and morphology of the films, respectively. Remarkably, about 2-3 orders of magnitude enhancement in their electrical conductivity than that reported till date is observed. Further, the Sn-doped thin films possess 2-3 orders of magnitude higher carrier concentration (1018-1019/cm3) than undoped films that is associated with a drastic reduction in mobility. Moreover, different conduction mechanisms possible at different temperature regions ranging from around 55 K–450 K are studied in detail. While the transparency of the films is increased from 43% to 85% on doping, the optical band gap decreases from 3.83 eV to 3.5 eV. Thin films Delafossite X-ray diffraction Electrical conductivity Transmittance Optical band gap Joseph, Julie Ann verfasserin aut Kellner, Z.T. verfasserin (orcid)0000-0001-7165-3867 aut Sharma, Vikash verfasserin aut Remillard, S.K. verfasserin aut DeYoung, P.A. verfasserin aut Okram, G.S. verfasserin (orcid)0000-0002-0060-8556 aut Ganesan, V. verfasserin aut Philip, Rachel Reena verfasserin aut Enthalten in Journal of alloys and compounds Lausanne : Elsevier, 1991 746, Seite 435-444 Online-Ressource (DE-627)320504646 (DE-600)2012675-X (DE-576)098615009 nnns volume:746 pages:435-444 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.54 Nichteisenmetalle und ihre Legierungen 33.61 Festkörperphysik 35.90 Festkörperchemie AR 746 435-444 |
| allfields_unstemmed |
10.1016/j.jallcom.2018.02.305 doi (DE-627)ELV001703919 (ELSEVIER)S0925-8388(18)30795-3 DE-627 ger DE-627 rda eng 670 540 DE-600 51.54 bkl 33.61 bkl 35.90 bkl Nair, Bindu G. verfasserin aut Tin-incorporated nanostructured copper indium oxide delafossite thin films: Structural, electrical and optical analysis 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Single phase polycrystalline Sn-doped CuInO2 thin films are prepared by the oxygen plasma enhanced reactive evaporation method. X-ray diffraction indicates a preferential orientation of crystallites along the (006) plane on doping while energy dispersive analysis of X-rays and atomic force microscopy are employed to appraise the composition and morphology of the films, respectively. Remarkably, about 2-3 orders of magnitude enhancement in their electrical conductivity than that reported till date is observed. Further, the Sn-doped thin films possess 2-3 orders of magnitude higher carrier concentration (1018-1019/cm3) than undoped films that is associated with a drastic reduction in mobility. Moreover, different conduction mechanisms possible at different temperature regions ranging from around 55 K–450 K are studied in detail. While the transparency of the films is increased from 43% to 85% on doping, the optical band gap decreases from 3.83 eV to 3.5 eV. Thin films Delafossite X-ray diffraction Electrical conductivity Transmittance Optical band gap Joseph, Julie Ann verfasserin aut Kellner, Z.T. verfasserin (orcid)0000-0001-7165-3867 aut Sharma, Vikash verfasserin aut Remillard, S.K. verfasserin aut DeYoung, P.A. verfasserin aut Okram, G.S. verfasserin (orcid)0000-0002-0060-8556 aut Ganesan, V. verfasserin aut Philip, Rachel Reena verfasserin aut Enthalten in Journal of alloys and compounds Lausanne : Elsevier, 1991 746, Seite 435-444 Online-Ressource (DE-627)320504646 (DE-600)2012675-X (DE-576)098615009 nnns volume:746 pages:435-444 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.54 Nichteisenmetalle und ihre Legierungen 33.61 Festkörperphysik 35.90 Festkörperchemie AR 746 435-444 |
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10.1016/j.jallcom.2018.02.305 doi (DE-627)ELV001703919 (ELSEVIER)S0925-8388(18)30795-3 DE-627 ger DE-627 rda eng 670 540 DE-600 51.54 bkl 33.61 bkl 35.90 bkl Nair, Bindu G. verfasserin aut Tin-incorporated nanostructured copper indium oxide delafossite thin films: Structural, electrical and optical analysis 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Single phase polycrystalline Sn-doped CuInO2 thin films are prepared by the oxygen plasma enhanced reactive evaporation method. X-ray diffraction indicates a preferential orientation of crystallites along the (006) plane on doping while energy dispersive analysis of X-rays and atomic force microscopy are employed to appraise the composition and morphology of the films, respectively. Remarkably, about 2-3 orders of magnitude enhancement in their electrical conductivity than that reported till date is observed. Further, the Sn-doped thin films possess 2-3 orders of magnitude higher carrier concentration (1018-1019/cm3) than undoped films that is associated with a drastic reduction in mobility. Moreover, different conduction mechanisms possible at different temperature regions ranging from around 55 K–450 K are studied in detail. While the transparency of the films is increased from 43% to 85% on doping, the optical band gap decreases from 3.83 eV to 3.5 eV. Thin films Delafossite X-ray diffraction Electrical conductivity Transmittance Optical band gap Joseph, Julie Ann verfasserin aut Kellner, Z.T. verfasserin (orcid)0000-0001-7165-3867 aut Sharma, Vikash verfasserin aut Remillard, S.K. verfasserin aut DeYoung, P.A. verfasserin aut Okram, G.S. verfasserin (orcid)0000-0002-0060-8556 aut Ganesan, V. verfasserin aut Philip, Rachel Reena verfasserin aut Enthalten in Journal of alloys and compounds Lausanne : Elsevier, 1991 746, Seite 435-444 Online-Ressource (DE-627)320504646 (DE-600)2012675-X (DE-576)098615009 nnns volume:746 pages:435-444 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.54 Nichteisenmetalle und ihre Legierungen 33.61 Festkörperphysik 35.90 Festkörperchemie AR 746 435-444 |
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10.1016/j.jallcom.2018.02.305 doi (DE-627)ELV001703919 (ELSEVIER)S0925-8388(18)30795-3 DE-627 ger DE-627 rda eng 670 540 DE-600 51.54 bkl 33.61 bkl 35.90 bkl Nair, Bindu G. verfasserin aut Tin-incorporated nanostructured copper indium oxide delafossite thin films: Structural, electrical and optical analysis 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Single phase polycrystalline Sn-doped CuInO2 thin films are prepared by the oxygen plasma enhanced reactive evaporation method. X-ray diffraction indicates a preferential orientation of crystallites along the (006) plane on doping while energy dispersive analysis of X-rays and atomic force microscopy are employed to appraise the composition and morphology of the films, respectively. Remarkably, about 2-3 orders of magnitude enhancement in their electrical conductivity than that reported till date is observed. Further, the Sn-doped thin films possess 2-3 orders of magnitude higher carrier concentration (1018-1019/cm3) than undoped films that is associated with a drastic reduction in mobility. Moreover, different conduction mechanisms possible at different temperature regions ranging from around 55 K–450 K are studied in detail. While the transparency of the films is increased from 43% to 85% on doping, the optical band gap decreases from 3.83 eV to 3.5 eV. Thin films Delafossite X-ray diffraction Electrical conductivity Transmittance Optical band gap Joseph, Julie Ann verfasserin aut Kellner, Z.T. verfasserin (orcid)0000-0001-7165-3867 aut Sharma, Vikash verfasserin aut Remillard, S.K. verfasserin aut DeYoung, P.A. verfasserin aut Okram, G.S. verfasserin (orcid)0000-0002-0060-8556 aut Ganesan, V. verfasserin aut Philip, Rachel Reena verfasserin aut Enthalten in Journal of alloys and compounds Lausanne : Elsevier, 1991 746, Seite 435-444 Online-Ressource (DE-627)320504646 (DE-600)2012675-X (DE-576)098615009 nnns volume:746 pages:435-444 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.54 Nichteisenmetalle und ihre Legierungen 33.61 Festkörperphysik 35.90 Festkörperchemie AR 746 435-444 |
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Enthalten in Journal of alloys and compounds 746, Seite 435-444 volume:746 pages:435-444 |
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Thin films Delafossite X-ray diffraction Electrical conductivity Transmittance Optical band gap |
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Nair, Bindu G. @@aut@@ Joseph, Julie Ann @@aut@@ Kellner, Z.T. @@aut@@ Sharma, Vikash @@aut@@ Remillard, S.K. @@aut@@ DeYoung, P.A. @@aut@@ Okram, G.S. @@aut@@ Ganesan, V. @@aut@@ Philip, Rachel Reena @@aut@@ |
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2018-01-01T00:00:00Z |
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tin-incorporated nanostructured copper indium oxide delafossite thin films: structural, electrical and optical analysis |
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Tin-incorporated nanostructured copper indium oxide delafossite thin films: Structural, electrical and optical analysis |
| abstract |
Single phase polycrystalline Sn-doped CuInO2 thin films are prepared by the oxygen plasma enhanced reactive evaporation method. X-ray diffraction indicates a preferential orientation of crystallites along the (006) plane on doping while energy dispersive analysis of X-rays and atomic force microscopy are employed to appraise the composition and morphology of the films, respectively. Remarkably, about 2-3 orders of magnitude enhancement in their electrical conductivity than that reported till date is observed. Further, the Sn-doped thin films possess 2-3 orders of magnitude higher carrier concentration (1018-1019/cm3) than undoped films that is associated with a drastic reduction in mobility. Moreover, different conduction mechanisms possible at different temperature regions ranging from around 55 K–450 K are studied in detail. While the transparency of the films is increased from 43% to 85% on doping, the optical band gap decreases from 3.83 eV to 3.5 eV. |
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Single phase polycrystalline Sn-doped CuInO2 thin films are prepared by the oxygen plasma enhanced reactive evaporation method. X-ray diffraction indicates a preferential orientation of crystallites along the (006) plane on doping while energy dispersive analysis of X-rays and atomic force microscopy are employed to appraise the composition and morphology of the films, respectively. Remarkably, about 2-3 orders of magnitude enhancement in their electrical conductivity than that reported till date is observed. Further, the Sn-doped thin films possess 2-3 orders of magnitude higher carrier concentration (1018-1019/cm3) than undoped films that is associated with a drastic reduction in mobility. Moreover, different conduction mechanisms possible at different temperature regions ranging from around 55 K–450 K are studied in detail. While the transparency of the films is increased from 43% to 85% on doping, the optical band gap decreases from 3.83 eV to 3.5 eV. |
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Single phase polycrystalline Sn-doped CuInO2 thin films are prepared by the oxygen plasma enhanced reactive evaporation method. X-ray diffraction indicates a preferential orientation of crystallites along the (006) plane on doping while energy dispersive analysis of X-rays and atomic force microscopy are employed to appraise the composition and morphology of the films, respectively. Remarkably, about 2-3 orders of magnitude enhancement in their electrical conductivity than that reported till date is observed. Further, the Sn-doped thin films possess 2-3 orders of magnitude higher carrier concentration (1018-1019/cm3) than undoped films that is associated with a drastic reduction in mobility. Moreover, different conduction mechanisms possible at different temperature regions ranging from around 55 K–450 K are studied in detail. While the transparency of the films is increased from 43% to 85% on doping, the optical band gap decreases from 3.83 eV to 3.5 eV. |
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Tin-incorporated nanostructured copper indium oxide delafossite thin films: Structural, electrical and optical analysis |
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|
| score |
7.399063 |