Dislocation climbing mechanism for helium bubble growth in tungsten

Molecular dynamics simulations were used to study the growth process of a He bubble on an edge dislocation in W, and the results indicated that the growth was controlled by a dislocation climbing mechanism. Unlike the well-known loop punching mechanism, the bubble grew by punching out interstitial a...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Xie, Hongxian [verfasserIn] Xu, Ke [verfasserIn] Lu, Guang-Hong [verfasserIn] Yu, Tao [verfasserIn] Yin, Fuxing [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2018

Schlagwörter:	Atomistic simulation He bubble BCC tungsten Dislocation climb

Übergeordnetes Werk:	Enthalten in: Scripta materialia - Amsterdam [u.a.] : Elsevier Science, 1996, 147, Seite 98-102
Übergeordnetes Werk:	volume:147 ; pages:98-102

DOI / URN:	10.1016/j.scriptamat.2018.01.009

Katalog-ID:	ELV001762745

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520			\|a Molecular dynamics simulations were used to study the growth process of a He bubble on an edge dislocation in W, and the results indicated that the growth was controlled by a dislocation climbing mechanism. Unlike the well-known loop punching mechanism, the bubble grew by punching out interstitial atoms, which were immediately absorbed into the dislocation core, causing the edge dislocation to climb. Moreover, the dislocation climbing mechanism was shown to be more energetically favorable than the loop punching mechanism for the He bubble growth.
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allfields	10.1016/j.scriptamat.2018.01.009 doi (DE-627)ELV001762745 (ELSEVIER)S1359-6462(18)30022-8 DE-627 ger DE-627 rda eng 670 DE-600 51.00 bkl Xie, Hongxian verfasserin aut Dislocation climbing mechanism for helium bubble growth in tungsten 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Molecular dynamics simulations were used to study the growth process of a He bubble on an edge dislocation in W, and the results indicated that the growth was controlled by a dislocation climbing mechanism. Unlike the well-known loop punching mechanism, the bubble grew by punching out interstitial atoms, which were immediately absorbed into the dislocation core, causing the edge dislocation to climb. Moreover, the dislocation climbing mechanism was shown to be more energetically favorable than the loop punching mechanism for the He bubble growth. Atomistic simulation He bubble BCC tungsten Dislocation climb Xu, Ke verfasserin aut Lu, Guang-Hong verfasserin aut Yu, Tao verfasserin aut Yin, Fuxing verfasserin aut Enthalten in Scripta materialia Amsterdam [u.a.] : Elsevier Science, 1996 147, Seite 98-102 Online-Ressource (DE-627)320531694 (DE-600)2015843-9 (DE-576)098474251 1359-6462 nnns volume:147 pages:98-102 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.00 Werkstoffkunde: Allgemeines AR 147 98-102
spelling	10.1016/j.scriptamat.2018.01.009 doi (DE-627)ELV001762745 (ELSEVIER)S1359-6462(18)30022-8 DE-627 ger DE-627 rda eng 670 DE-600 51.00 bkl Xie, Hongxian verfasserin aut Dislocation climbing mechanism for helium bubble growth in tungsten 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Molecular dynamics simulations were used to study the growth process of a He bubble on an edge dislocation in W, and the results indicated that the growth was controlled by a dislocation climbing mechanism. Unlike the well-known loop punching mechanism, the bubble grew by punching out interstitial atoms, which were immediately absorbed into the dislocation core, causing the edge dislocation to climb. Moreover, the dislocation climbing mechanism was shown to be more energetically favorable than the loop punching mechanism for the He bubble growth. Atomistic simulation He bubble BCC tungsten Dislocation climb Xu, Ke verfasserin aut Lu, Guang-Hong verfasserin aut Yu, Tao verfasserin aut Yin, Fuxing verfasserin aut Enthalten in Scripta materialia Amsterdam [u.a.] : Elsevier Science, 1996 147, Seite 98-102 Online-Ressource (DE-627)320531694 (DE-600)2015843-9 (DE-576)098474251 1359-6462 nnns volume:147 pages:98-102 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.00 Werkstoffkunde: Allgemeines AR 147 98-102
allfields_unstemmed	10.1016/j.scriptamat.2018.01.009 doi (DE-627)ELV001762745 (ELSEVIER)S1359-6462(18)30022-8 DE-627 ger DE-627 rda eng 670 DE-600 51.00 bkl Xie, Hongxian verfasserin aut Dislocation climbing mechanism for helium bubble growth in tungsten 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Molecular dynamics simulations were used to study the growth process of a He bubble on an edge dislocation in W, and the results indicated that the growth was controlled by a dislocation climbing mechanism. Unlike the well-known loop punching mechanism, the bubble grew by punching out interstitial atoms, which were immediately absorbed into the dislocation core, causing the edge dislocation to climb. Moreover, the dislocation climbing mechanism was shown to be more energetically favorable than the loop punching mechanism for the He bubble growth. Atomistic simulation He bubble BCC tungsten Dislocation climb Xu, Ke verfasserin aut Lu, Guang-Hong verfasserin aut Yu, Tao verfasserin aut Yin, Fuxing verfasserin aut Enthalten in Scripta materialia Amsterdam [u.a.] : Elsevier Science, 1996 147, Seite 98-102 Online-Ressource (DE-627)320531694 (DE-600)2015843-9 (DE-576)098474251 1359-6462 nnns volume:147 pages:98-102 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.00 Werkstoffkunde: Allgemeines AR 147 98-102
allfieldsGer	10.1016/j.scriptamat.2018.01.009 doi (DE-627)ELV001762745 (ELSEVIER)S1359-6462(18)30022-8 DE-627 ger DE-627 rda eng 670 DE-600 51.00 bkl Xie, Hongxian verfasserin aut Dislocation climbing mechanism for helium bubble growth in tungsten 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Molecular dynamics simulations were used to study the growth process of a He bubble on an edge dislocation in W, and the results indicated that the growth was controlled by a dislocation climbing mechanism. Unlike the well-known loop punching mechanism, the bubble grew by punching out interstitial atoms, which were immediately absorbed into the dislocation core, causing the edge dislocation to climb. Moreover, the dislocation climbing mechanism was shown to be more energetically favorable than the loop punching mechanism for the He bubble growth. Atomistic simulation He bubble BCC tungsten Dislocation climb Xu, Ke verfasserin aut Lu, Guang-Hong verfasserin aut Yu, Tao verfasserin aut Yin, Fuxing verfasserin aut Enthalten in Scripta materialia Amsterdam [u.a.] : Elsevier Science, 1996 147, Seite 98-102 Online-Ressource (DE-627)320531694 (DE-600)2015843-9 (DE-576)098474251 1359-6462 nnns volume:147 pages:98-102 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.00 Werkstoffkunde: Allgemeines AR 147 98-102
allfieldsSound	10.1016/j.scriptamat.2018.01.009 doi (DE-627)ELV001762745 (ELSEVIER)S1359-6462(18)30022-8 DE-627 ger DE-627 rda eng 670 DE-600 51.00 bkl Xie, Hongxian verfasserin aut Dislocation climbing mechanism for helium bubble growth in tungsten 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Molecular dynamics simulations were used to study the growth process of a He bubble on an edge dislocation in W, and the results indicated that the growth was controlled by a dislocation climbing mechanism. Unlike the well-known loop punching mechanism, the bubble grew by punching out interstitial atoms, which were immediately absorbed into the dislocation core, causing the edge dislocation to climb. Moreover, the dislocation climbing mechanism was shown to be more energetically favorable than the loop punching mechanism for the He bubble growth. Atomistic simulation He bubble BCC tungsten Dislocation climb Xu, Ke verfasserin aut Lu, Guang-Hong verfasserin aut Yu, Tao verfasserin aut Yin, Fuxing verfasserin aut Enthalten in Scripta materialia Amsterdam [u.a.] : Elsevier Science, 1996 147, Seite 98-102 Online-Ressource (DE-627)320531694 (DE-600)2015843-9 (DE-576)098474251 1359-6462 nnns volume:147 pages:98-102 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.00 Werkstoffkunde: Allgemeines AR 147 98-102
language	English
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author	Xie, Hongxian
spellingShingle	Xie, Hongxian ddc 670 bkl 51.00 misc Atomistic simulation misc He bubble misc BCC tungsten misc Dislocation climb Dislocation climbing mechanism for helium bubble growth in tungsten
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topic_title	670 DE-600 51.00 bkl Dislocation climbing mechanism for helium bubble growth in tungsten Atomistic simulation He bubble BCC tungsten Dislocation climb
topic	ddc 670 bkl 51.00 misc Atomistic simulation misc He bubble misc BCC tungsten misc Dislocation climb
topic_unstemmed	ddc 670 bkl 51.00 misc Atomistic simulation misc He bubble misc BCC tungsten misc Dislocation climb
topic_browse	ddc 670 bkl 51.00 misc Atomistic simulation misc He bubble misc BCC tungsten misc Dislocation climb
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title	Dislocation climbing mechanism for helium bubble growth in tungsten
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title_full	Dislocation climbing mechanism for helium bubble growth in tungsten
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title_sort	dislocation climbing mechanism for helium bubble growth in tungsten
title_auth	Dislocation climbing mechanism for helium bubble growth in tungsten
abstract	Molecular dynamics simulations were used to study the growth process of a He bubble on an edge dislocation in W, and the results indicated that the growth was controlled by a dislocation climbing mechanism. Unlike the well-known loop punching mechanism, the bubble grew by punching out interstitial atoms, which were immediately absorbed into the dislocation core, causing the edge dislocation to climb. Moreover, the dislocation climbing mechanism was shown to be more energetically favorable than the loop punching mechanism for the He bubble growth.
abstractGer	Molecular dynamics simulations were used to study the growth process of a He bubble on an edge dislocation in W, and the results indicated that the growth was controlled by a dislocation climbing mechanism. Unlike the well-known loop punching mechanism, the bubble grew by punching out interstitial atoms, which were immediately absorbed into the dislocation core, causing the edge dislocation to climb. Moreover, the dislocation climbing mechanism was shown to be more energetically favorable than the loop punching mechanism for the He bubble growth.
abstract_unstemmed	Molecular dynamics simulations were used to study the growth process of a He bubble on an edge dislocation in W, and the results indicated that the growth was controlled by a dislocation climbing mechanism. Unlike the well-known loop punching mechanism, the bubble grew by punching out interstitial atoms, which were immediately absorbed into the dislocation core, causing the edge dislocation to climb. Moreover, the dislocation climbing mechanism was shown to be more energetically favorable than the loop punching mechanism for the He bubble growth.
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title_short	Dislocation climbing mechanism for helium bubble growth in tungsten
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author2	Xu, Ke Lu, Guang-Hong Yu, Tao Yin, Fuxing
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doi_str	10.1016/j.scriptamat.2018.01.009
up_date	2024-07-06T22:29:16.838Z
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Unlike the well-known loop punching mechanism, the bubble grew by punching out interstitial atoms, which were immediately absorbed into the dislocation core, causing the edge dislocation to climb. 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Dislocation climbing mechanism for helium bubble growth in tungsten

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