Mechanism of resistance distribution properties in oxide-based resistance switching nanodevice

Although oxide-based resistive switching memory (OxRAM) is one of the strong next-generation high-capacity memory candidates, it has an unresolved problem that the higher the resistance levels, the larger the cycle-to-cycle resistance variabilities to be operated in multi-resistance level mode. In t...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Hur, Ji-Hyun [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2019

Schlagwörter:	Resistive memory Oxide memory OxRAM Modeling Resistance variability Resistance deviation

Übergeordnetes Werk:	Enthalten in: Physics letters / A - Amsterdam : North-Holland Publ., 1967, 383, Seite 1182-1186
Übergeordnetes Werk:	volume:383 ; pages:1182-1186

DOI / URN:	10.1016/j.physleta.2018.12.039

Katalog-ID:	ELV001836056

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520			\|a Although oxide-based resistive switching memory (OxRAM) is one of the strong next-generation high-capacity memory candidates, it has an unresolved problem that the higher the resistance levels, the larger the cycle-to-cycle resistance variabilities to be operated in multi-resistance level mode. In this paper, we develop a simple theory from the operating principles of OxRAMs that excellently matches with experiments both qualitatively and quantitatively. From the theory, we can finally understand the fundamental capabilities of multi-resistance level operation of OxRAMs, and how to improve the switching properties within that.
650		4	\|a Resistive memory
650		4	\|a Oxide memory
650		4	\|a OxRAM
650		4	\|a Modeling
650		4	\|a Resistance variability
650		4	\|a Resistance deviation
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allfields	10.1016/j.physleta.2018.12.039 doi (DE-627)ELV001836056 (ELSEVIER)S0375-9601(18)31274-X DE-627 ger DE-627 rda eng 530 DE-600 33.00 bkl Hur, Ji-Hyun verfasserin (orcid)0000-0002-3927-5605 aut Mechanism of resistance distribution properties in oxide-based resistance switching nanodevice 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Although oxide-based resistive switching memory (OxRAM) is one of the strong next-generation high-capacity memory candidates, it has an unresolved problem that the higher the resistance levels, the larger the cycle-to-cycle resistance variabilities to be operated in multi-resistance level mode. In this paper, we develop a simple theory from the operating principles of OxRAMs that excellently matches with experiments both qualitatively and quantitatively. From the theory, we can finally understand the fundamental capabilities of multi-resistance level operation of OxRAMs, and how to improve the switching properties within that. Resistive memory Oxide memory OxRAM Modeling Resistance variability Resistance deviation Enthalten in Physics letters / A Amsterdam : North-Holland Publ., 1967 383, Seite 1182-1186 Online-Ressource (DE-627)266015298 (DE-600)1466603-0 (DE-576)074959905 1873-2429 nnns volume:383 pages:1182-1186 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.00 Physik: Allgemeines AR 383 1182-1186
spelling	10.1016/j.physleta.2018.12.039 doi (DE-627)ELV001836056 (ELSEVIER)S0375-9601(18)31274-X DE-627 ger DE-627 rda eng 530 DE-600 33.00 bkl Hur, Ji-Hyun verfasserin (orcid)0000-0002-3927-5605 aut Mechanism of resistance distribution properties in oxide-based resistance switching nanodevice 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Although oxide-based resistive switching memory (OxRAM) is one of the strong next-generation high-capacity memory candidates, it has an unresolved problem that the higher the resistance levels, the larger the cycle-to-cycle resistance variabilities to be operated in multi-resistance level mode. In this paper, we develop a simple theory from the operating principles of OxRAMs that excellently matches with experiments both qualitatively and quantitatively. From the theory, we can finally understand the fundamental capabilities of multi-resistance level operation of OxRAMs, and how to improve the switching properties within that. Resistive memory Oxide memory OxRAM Modeling Resistance variability Resistance deviation Enthalten in Physics letters / A Amsterdam : North-Holland Publ., 1967 383, Seite 1182-1186 Online-Ressource (DE-627)266015298 (DE-600)1466603-0 (DE-576)074959905 1873-2429 nnns volume:383 pages:1182-1186 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.00 Physik: Allgemeines AR 383 1182-1186
allfields_unstemmed	10.1016/j.physleta.2018.12.039 doi (DE-627)ELV001836056 (ELSEVIER)S0375-9601(18)31274-X DE-627 ger DE-627 rda eng 530 DE-600 33.00 bkl Hur, Ji-Hyun verfasserin (orcid)0000-0002-3927-5605 aut Mechanism of resistance distribution properties in oxide-based resistance switching nanodevice 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Although oxide-based resistive switching memory (OxRAM) is one of the strong next-generation high-capacity memory candidates, it has an unresolved problem that the higher the resistance levels, the larger the cycle-to-cycle resistance variabilities to be operated in multi-resistance level mode. In this paper, we develop a simple theory from the operating principles of OxRAMs that excellently matches with experiments both qualitatively and quantitatively. From the theory, we can finally understand the fundamental capabilities of multi-resistance level operation of OxRAMs, and how to improve the switching properties within that. Resistive memory Oxide memory OxRAM Modeling Resistance variability Resistance deviation Enthalten in Physics letters / A Amsterdam : North-Holland Publ., 1967 383, Seite 1182-1186 Online-Ressource (DE-627)266015298 (DE-600)1466603-0 (DE-576)074959905 1873-2429 nnns volume:383 pages:1182-1186 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.00 Physik: Allgemeines AR 383 1182-1186
allfieldsGer	10.1016/j.physleta.2018.12.039 doi (DE-627)ELV001836056 (ELSEVIER)S0375-9601(18)31274-X DE-627 ger DE-627 rda eng 530 DE-600 33.00 bkl Hur, Ji-Hyun verfasserin (orcid)0000-0002-3927-5605 aut Mechanism of resistance distribution properties in oxide-based resistance switching nanodevice 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Although oxide-based resistive switching memory (OxRAM) is one of the strong next-generation high-capacity memory candidates, it has an unresolved problem that the higher the resistance levels, the larger the cycle-to-cycle resistance variabilities to be operated in multi-resistance level mode. In this paper, we develop a simple theory from the operating principles of OxRAMs that excellently matches with experiments both qualitatively and quantitatively. From the theory, we can finally understand the fundamental capabilities of multi-resistance level operation of OxRAMs, and how to improve the switching properties within that. Resistive memory Oxide memory OxRAM Modeling Resistance variability Resistance deviation Enthalten in Physics letters / A Amsterdam : North-Holland Publ., 1967 383, Seite 1182-1186 Online-Ressource (DE-627)266015298 (DE-600)1466603-0 (DE-576)074959905 1873-2429 nnns volume:383 pages:1182-1186 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.00 Physik: Allgemeines AR 383 1182-1186
allfieldsSound	10.1016/j.physleta.2018.12.039 doi (DE-627)ELV001836056 (ELSEVIER)S0375-9601(18)31274-X DE-627 ger DE-627 rda eng 530 DE-600 33.00 bkl Hur, Ji-Hyun verfasserin (orcid)0000-0002-3927-5605 aut Mechanism of resistance distribution properties in oxide-based resistance switching nanodevice 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Although oxide-based resistive switching memory (OxRAM) is one of the strong next-generation high-capacity memory candidates, it has an unresolved problem that the higher the resistance levels, the larger the cycle-to-cycle resistance variabilities to be operated in multi-resistance level mode. In this paper, we develop a simple theory from the operating principles of OxRAMs that excellently matches with experiments both qualitatively and quantitatively. From the theory, we can finally understand the fundamental capabilities of multi-resistance level operation of OxRAMs, and how to improve the switching properties within that. Resistive memory Oxide memory OxRAM Modeling Resistance variability Resistance deviation Enthalten in Physics letters / A Amsterdam : North-Holland Publ., 1967 383, Seite 1182-1186 Online-Ressource (DE-627)266015298 (DE-600)1466603-0 (DE-576)074959905 1873-2429 nnns volume:383 pages:1182-1186 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.00 Physik: Allgemeines AR 383 1182-1186
language	English
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author	Hur, Ji-Hyun
spellingShingle	Hur, Ji-Hyun ddc 530 bkl 33.00 misc Resistive memory misc Oxide memory misc OxRAM misc Modeling misc Resistance variability misc Resistance deviation Mechanism of resistance distribution properties in oxide-based resistance switching nanodevice
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topic_title	530 DE-600 33.00 bkl Mechanism of resistance distribution properties in oxide-based resistance switching nanodevice Resistive memory Oxide memory OxRAM Modeling Resistance variability Resistance deviation
topic	ddc 530 bkl 33.00 misc Resistive memory misc Oxide memory misc OxRAM misc Modeling misc Resistance variability misc Resistance deviation
topic_unstemmed	ddc 530 bkl 33.00 misc Resistive memory misc Oxide memory misc OxRAM misc Modeling misc Resistance variability misc Resistance deviation
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title	Mechanism of resistance distribution properties in oxide-based resistance switching nanodevice
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title_full	Mechanism of resistance distribution properties in oxide-based resistance switching nanodevice
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title_sort	mechanism of resistance distribution properties in oxide-based resistance switching nanodevice
title_auth	Mechanism of resistance distribution properties in oxide-based resistance switching nanodevice
abstract	Although oxide-based resistive switching memory (OxRAM) is one of the strong next-generation high-capacity memory candidates, it has an unresolved problem that the higher the resistance levels, the larger the cycle-to-cycle resistance variabilities to be operated in multi-resistance level mode. In this paper, we develop a simple theory from the operating principles of OxRAMs that excellently matches with experiments both qualitatively and quantitatively. From the theory, we can finally understand the fundamental capabilities of multi-resistance level operation of OxRAMs, and how to improve the switching properties within that.
abstractGer	Although oxide-based resistive switching memory (OxRAM) is one of the strong next-generation high-capacity memory candidates, it has an unresolved problem that the higher the resistance levels, the larger the cycle-to-cycle resistance variabilities to be operated in multi-resistance level mode. In this paper, we develop a simple theory from the operating principles of OxRAMs that excellently matches with experiments both qualitatively and quantitatively. From the theory, we can finally understand the fundamental capabilities of multi-resistance level operation of OxRAMs, and how to improve the switching properties within that.
abstract_unstemmed	Although oxide-based resistive switching memory (OxRAM) is one of the strong next-generation high-capacity memory candidates, it has an unresolved problem that the higher the resistance levels, the larger the cycle-to-cycle resistance variabilities to be operated in multi-resistance level mode. In this paper, we develop a simple theory from the operating principles of OxRAMs that excellently matches with experiments both qualitatively and quantitatively. From the theory, we can finally understand the fundamental capabilities of multi-resistance level operation of OxRAMs, and how to improve the switching properties within that.
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title_short	Mechanism of resistance distribution properties in oxide-based resistance switching nanodevice
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up_date	2024-07-06T22:43:45.921Z
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Mechanism of resistance distribution properties in oxide-based resistance switching nanodevice

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