Exchange bias and two steps magnetization reversal in porous Co/CoO layer
In this paper Co/CoO thick layers (hundreds of nanometers) of different porosity and oxidation degree were prepared in a magnetron sputtering deposition process by tailoring the DC sputtering power, as well as the process gas and target composition. The control of the synthesis parameters allowed th...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Ovejero, Jesús G. [verfasserIn] Godinho, Vanda [verfasserIn] Lacroix, Bertrand [verfasserIn] García, Miguel A. [verfasserIn] Hernando, Antonio [verfasserIn] Fernández, Asunción [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2019 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Materials and design - Amsterdam [u.a.] : Elsevier Science, 1980, 171 |
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| Übergeordnetes Werk: |
volume:171 |
| DOI / URN: |
10.1016/j.matdes.2019.107691 |
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| Katalog-ID: |
ELV002002906 |
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| 520 | |a In this paper Co/CoO thick layers (hundreds of nanometers) of different porosity and oxidation degree were prepared in a magnetron sputtering deposition process by tailoring the DC sputtering power, as well as the process gas and target composition. The control of the synthesis parameters allowed the nanostructuration of the films with a singular distribution of closed pores and a controlled amount of CoO. We observed an exchange bias field of 2.8 KOe for porous Co/CoO composites, similar to Co/CoO bilayers but for coatings thicker than 300 nm. Besides, it was observed that the coating presents bistable magnetic features when cooled under zero field conditions as a result of the unusual exchange coupling. | ||
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| 700 | 1 | |a Lacroix, Bertrand |e verfasserin |4 aut | |
| 700 | 1 | |a García, Miguel A. |e verfasserin |4 aut | |
| 700 | 1 | |a Hernando, Antonio |e verfasserin |4 aut | |
| 700 | 1 | |a Fernández, Asunción |e verfasserin |0 (orcid)0000-0002-7487-7054 |4 aut | |
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10.1016/j.matdes.2019.107691 doi (DE-627)ELV002002906 (ELSEVIER)S0264-1275(19)30128-5 DE-627 ger DE-627 rda eng 600 690 DE-600 51.00 bkl 51.32 bkl Ovejero, Jesús G. verfasserin (orcid)0000-0003-3774-6589 aut Exchange bias and two steps magnetization reversal in porous Co/CoO layer 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper Co/CoO thick layers (hundreds of nanometers) of different porosity and oxidation degree were prepared in a magnetron sputtering deposition process by tailoring the DC sputtering power, as well as the process gas and target composition. The control of the synthesis parameters allowed the nanostructuration of the films with a singular distribution of closed pores and a controlled amount of CoO. We observed an exchange bias field of 2.8 KOe for porous Co/CoO composites, similar to Co/CoO bilayers but for coatings thicker than 300 nm. Besides, it was observed that the coating presents bistable magnetic features when cooled under zero field conditions as a result of the unusual exchange coupling. Co Porous Double loop Exchange bias Godinho, Vanda verfasserin aut Lacroix, Bertrand verfasserin aut García, Miguel A. verfasserin aut Hernando, Antonio verfasserin aut Fernández, Asunción verfasserin (orcid)0000-0002-7487-7054 aut Enthalten in Materials and design Amsterdam [u.a.] : Elsevier Science, 1980 171 Online-Ressource (DE-627)32052857X (DE-600)2015480-X (DE-576)096806656 1873-4197 nnns volume:171 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_165 GBV_ILN_170 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 51.00 Werkstoffkunde: Allgemeines 51.32 Werkstoffmechanik AR 171 |
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10.1016/j.matdes.2019.107691 doi (DE-627)ELV002002906 (ELSEVIER)S0264-1275(19)30128-5 DE-627 ger DE-627 rda eng 600 690 DE-600 51.00 bkl 51.32 bkl Ovejero, Jesús G. verfasserin (orcid)0000-0003-3774-6589 aut Exchange bias and two steps magnetization reversal in porous Co/CoO layer 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper Co/CoO thick layers (hundreds of nanometers) of different porosity and oxidation degree were prepared in a magnetron sputtering deposition process by tailoring the DC sputtering power, as well as the process gas and target composition. The control of the synthesis parameters allowed the nanostructuration of the films with a singular distribution of closed pores and a controlled amount of CoO. We observed an exchange bias field of 2.8 KOe for porous Co/CoO composites, similar to Co/CoO bilayers but for coatings thicker than 300 nm. Besides, it was observed that the coating presents bistable magnetic features when cooled under zero field conditions as a result of the unusual exchange coupling. Co Porous Double loop Exchange bias Godinho, Vanda verfasserin aut Lacroix, Bertrand verfasserin aut García, Miguel A. verfasserin aut Hernando, Antonio verfasserin aut Fernández, Asunción verfasserin (orcid)0000-0002-7487-7054 aut Enthalten in Materials and design Amsterdam [u.a.] : Elsevier Science, 1980 171 Online-Ressource (DE-627)32052857X (DE-600)2015480-X (DE-576)096806656 1873-4197 nnns volume:171 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_165 GBV_ILN_170 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 51.00 Werkstoffkunde: Allgemeines 51.32 Werkstoffmechanik AR 171 |
| allfields_unstemmed |
10.1016/j.matdes.2019.107691 doi (DE-627)ELV002002906 (ELSEVIER)S0264-1275(19)30128-5 DE-627 ger DE-627 rda eng 600 690 DE-600 51.00 bkl 51.32 bkl Ovejero, Jesús G. verfasserin (orcid)0000-0003-3774-6589 aut Exchange bias and two steps magnetization reversal in porous Co/CoO layer 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper Co/CoO thick layers (hundreds of nanometers) of different porosity and oxidation degree were prepared in a magnetron sputtering deposition process by tailoring the DC sputtering power, as well as the process gas and target composition. The control of the synthesis parameters allowed the nanostructuration of the films with a singular distribution of closed pores and a controlled amount of CoO. We observed an exchange bias field of 2.8 KOe for porous Co/CoO composites, similar to Co/CoO bilayers but for coatings thicker than 300 nm. Besides, it was observed that the coating presents bistable magnetic features when cooled under zero field conditions as a result of the unusual exchange coupling. Co Porous Double loop Exchange bias Godinho, Vanda verfasserin aut Lacroix, Bertrand verfasserin aut García, Miguel A. verfasserin aut Hernando, Antonio verfasserin aut Fernández, Asunción verfasserin (orcid)0000-0002-7487-7054 aut Enthalten in Materials and design Amsterdam [u.a.] : Elsevier Science, 1980 171 Online-Ressource (DE-627)32052857X (DE-600)2015480-X (DE-576)096806656 1873-4197 nnns volume:171 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_165 GBV_ILN_170 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 51.00 Werkstoffkunde: Allgemeines 51.32 Werkstoffmechanik AR 171 |
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10.1016/j.matdes.2019.107691 doi (DE-627)ELV002002906 (ELSEVIER)S0264-1275(19)30128-5 DE-627 ger DE-627 rda eng 600 690 DE-600 51.00 bkl 51.32 bkl Ovejero, Jesús G. verfasserin (orcid)0000-0003-3774-6589 aut Exchange bias and two steps magnetization reversal in porous Co/CoO layer 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper Co/CoO thick layers (hundreds of nanometers) of different porosity and oxidation degree were prepared in a magnetron sputtering deposition process by tailoring the DC sputtering power, as well as the process gas and target composition. The control of the synthesis parameters allowed the nanostructuration of the films with a singular distribution of closed pores and a controlled amount of CoO. We observed an exchange bias field of 2.8 KOe for porous Co/CoO composites, similar to Co/CoO bilayers but for coatings thicker than 300 nm. Besides, it was observed that the coating presents bistable magnetic features when cooled under zero field conditions as a result of the unusual exchange coupling. Co Porous Double loop Exchange bias Godinho, Vanda verfasserin aut Lacroix, Bertrand verfasserin aut García, Miguel A. verfasserin aut Hernando, Antonio verfasserin aut Fernández, Asunción verfasserin (orcid)0000-0002-7487-7054 aut Enthalten in Materials and design Amsterdam [u.a.] : Elsevier Science, 1980 171 Online-Ressource (DE-627)32052857X (DE-600)2015480-X (DE-576)096806656 1873-4197 nnns volume:171 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_95 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_161 GBV_ILN_165 GBV_ILN_170 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 51.00 Werkstoffkunde: Allgemeines 51.32 Werkstoffmechanik AR 171 |
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Ovejero, Jesús G. @@aut@@ Godinho, Vanda @@aut@@ Lacroix, Bertrand @@aut@@ García, Miguel A. @@aut@@ Hernando, Antonio @@aut@@ Fernández, Asunción @@aut@@ |
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Ovejero, Jesús G. |
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Exchange bias and two steps magnetization reversal in porous Co/CoO layer |
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Exchange bias and two steps magnetization reversal in porous Co/CoO layer |
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Ovejero, Jesús G. Godinho, Vanda Lacroix, Bertrand García, Miguel A. Hernando, Antonio Fernández, Asunción |
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exchange bias and two steps magnetization reversal in porous co/coo layer |
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Exchange bias and two steps magnetization reversal in porous Co/CoO layer |
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In this paper Co/CoO thick layers (hundreds of nanometers) of different porosity and oxidation degree were prepared in a magnetron sputtering deposition process by tailoring the DC sputtering power, as well as the process gas and target composition. The control of the synthesis parameters allowed the nanostructuration of the films with a singular distribution of closed pores and a controlled amount of CoO. We observed an exchange bias field of 2.8 KOe for porous Co/CoO composites, similar to Co/CoO bilayers but for coatings thicker than 300 nm. Besides, it was observed that the coating presents bistable magnetic features when cooled under zero field conditions as a result of the unusual exchange coupling. |
| abstractGer |
In this paper Co/CoO thick layers (hundreds of nanometers) of different porosity and oxidation degree were prepared in a magnetron sputtering deposition process by tailoring the DC sputtering power, as well as the process gas and target composition. The control of the synthesis parameters allowed the nanostructuration of the films with a singular distribution of closed pores and a controlled amount of CoO. We observed an exchange bias field of 2.8 KOe for porous Co/CoO composites, similar to Co/CoO bilayers but for coatings thicker than 300 nm. Besides, it was observed that the coating presents bistable magnetic features when cooled under zero field conditions as a result of the unusual exchange coupling. |
| abstract_unstemmed |
In this paper Co/CoO thick layers (hundreds of nanometers) of different porosity and oxidation degree were prepared in a magnetron sputtering deposition process by tailoring the DC sputtering power, as well as the process gas and target composition. The control of the synthesis parameters allowed the nanostructuration of the films with a singular distribution of closed pores and a controlled amount of CoO. We observed an exchange bias field of 2.8 KOe for porous Co/CoO composites, similar to Co/CoO bilayers but for coatings thicker than 300 nm. Besides, it was observed that the coating presents bistable magnetic features when cooled under zero field conditions as a result of the unusual exchange coupling. |
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Exchange bias and two steps magnetization reversal in porous Co/CoO layer |
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Godinho, Vanda Lacroix, Bertrand García, Miguel A. Hernando, Antonio Fernández, Asunción |
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|
| score |
7.4019012 |