Strain and electric field induced metallization in the GaX (X = N, P, As & Sb) monolayer

We investigate the strain and electric field dependent electronic properties of two dimensional Ga-based group III-V monolayer from the first-principles approach within density functional theory. The energy bandgap of GaX monolayer increases upto the certain value of compressive strain and then decr...
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Autor*in:	Bahuguna, Bhagwati Prasad [verfasserIn] Saini, L.K. [verfasserIn] Sharma, Rajesh O. [verfasserIn] Tiwari, Brajesh [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2018

Schlagwörter:	Ga-based group III-V monolayer Electronic structure Band engineering Optical properties Density functional theory

Übergeordnetes Werk:	Enthalten in: Physica / E - Amsterdam [u.a.] : North-Holland, Elsevier Science, 1998, 99, Seite 236-243
Übergeordnetes Werk:	volume:99 ; pages:236-243

DOI / URN:	10.1016/j.physe.2018.01.018

Katalog-ID:	ELV002074923

Internformat


LEADER	01000caa a22002652 4500
001	ELV002074923
003	DE-627
005	20230524145845.0
007	cr uuu---uuuuu
008	230429s2018 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.1016/j.physe.2018.01.018 \|2 doi
035			\|a (DE-627)ELV002074923
035			\|a (ELSEVIER)S1386-9477(17)31752-6
040			\|a DE-627 \|b ger \|c DE-627 \|e rda
041			\|a eng
082	0	4	\|a 530 \|q DE-600
084			\|a 33.68 \|2 bkl
084			\|a 50.94 \|2 bkl
100	1		\|a Bahuguna, Bhagwati Prasad \|e verfasserin \|4 aut
245	1	0	\|a Strain and electric field induced metallization in the GaX (X = N, P, As & Sb) monolayer
264		1	\|c 2018
336			\|a nicht spezifiziert \|b zzz \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a We investigate the strain and electric field dependent electronic properties of two dimensional Ga-based group III-V monolayer from the first-principles approach within density functional theory. The energy bandgap of GaX monolayer increases upto the certain value of compressive strain and then decreases. On the other hand, the energy bandgap of GaX monolayer is monotonically decreased with increasing tensile strain and become metallic at the higher value. Furthermore, the perpendicular electric field decreases the energy band gap of unstrained GaX monolayer and shows semiconductor to metal transition. These results suggest that the nature of energy bands and value of energy bandgap in GaX monolayer can be tuned by the biaxial mechanical strain or perpendicular electrical field. Additionally, we have also studied the optical response of unstrained GaX monolayer in term of optical conductivity. These findings may provide valuable information to develop the Ga-based optoelectronic devices and further the understanding of the GaX monolayer.
650		4	\|a Ga-based group III-V monolayer
650		4	\|a Electronic structure
650		4	\|a Band engineering
650		4	\|a Optical properties
650		4	\|a Density functional theory
700	1		\|a Saini, L.K. \|e verfasserin \|4 aut
700	1		\|a Sharma, Rajesh O. \|e verfasserin \|4 aut
700	1		\|a Tiwari, Brajesh \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Physica / E \|d Amsterdam [u.a.] : North-Holland, Elsevier Science, 1998 \|g 99, Seite 236-243 \|h Online-Ressource \|w (DE-627)266015239 \|w (DE-600)1466595-5 \|w (DE-576)074959875 \|x 1386-9477 \|7 nnns
773	1	8	\|g volume:99 \|g pages:236-243
912			\|a GBV_USEFLAG_U
912			\|a SYSFLAG_U
912			\|a GBV_ELV
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_31
912			\|a GBV_ILN_32
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
912			\|a GBV_ILN_100
912			\|a GBV_ILN_101
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_165
912			\|a GBV_ILN_224
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2056
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2122
912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
912			\|a GBV_ILN_2147
912			\|a GBV_ILN_2148
912			\|a GBV_ILN_2152
912			\|a GBV_ILN_2153
912			\|a GBV_ILN_2190
912			\|a GBV_ILN_2336
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_2522
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4242
912			\|a GBV_ILN_4251
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4326
912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4334
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4393
936	b	k	\|a 33.68 \|j Oberflächen \|j Dünne Schichten \|j Grenzflächen \|x Physik
936	b	k	\|a 50.94 \|j Mikrosystemtechnik \|j Nanotechnologie
951			\|a AR
952			\|d 99 \|h 236-243

Indexfelder

author_variant	b p b bp bpb l s ls r o s ro ros b t bt
matchkey_str	article:13869477:2018----::tanneetifednuemtliainnhg
hierarchy_sort_str	2018
bklnumber	33.68 50.94
publishDate	2018
allfields	10.1016/j.physe.2018.01.018 doi (DE-627)ELV002074923 (ELSEVIER)S1386-9477(17)31752-6 DE-627 ger DE-627 rda eng 530 DE-600 33.68 bkl 50.94 bkl Bahuguna, Bhagwati Prasad verfasserin aut Strain and electric field induced metallization in the GaX (X = N, P, As & Sb) monolayer 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We investigate the strain and electric field dependent electronic properties of two dimensional Ga-based group III-V monolayer from the first-principles approach within density functional theory. The energy bandgap of GaX monolayer increases upto the certain value of compressive strain and then decreases. On the other hand, the energy bandgap of GaX monolayer is monotonically decreased with increasing tensile strain and become metallic at the higher value. Furthermore, the perpendicular electric field decreases the energy band gap of unstrained GaX monolayer and shows semiconductor to metal transition. These results suggest that the nature of energy bands and value of energy bandgap in GaX monolayer can be tuned by the biaxial mechanical strain or perpendicular electrical field. Additionally, we have also studied the optical response of unstrained GaX monolayer in term of optical conductivity. These findings may provide valuable information to develop the Ga-based optoelectronic devices and further the understanding of the GaX monolayer. Ga-based group III-V monolayer Electronic structure Band engineering Optical properties Density functional theory Saini, L.K. verfasserin aut Sharma, Rajesh O. verfasserin aut Tiwari, Brajesh verfasserin aut Enthalten in Physica / E Amsterdam [u.a.] : North-Holland, Elsevier Science, 1998 99, Seite 236-243 Online-Ressource (DE-627)266015239 (DE-600)1466595-5 (DE-576)074959875 1386-9477 nnns volume:99 pages:236-243 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_165 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik 50.94 Mikrosystemtechnik Nanotechnologie AR 99 236-243
spelling	10.1016/j.physe.2018.01.018 doi (DE-627)ELV002074923 (ELSEVIER)S1386-9477(17)31752-6 DE-627 ger DE-627 rda eng 530 DE-600 33.68 bkl 50.94 bkl Bahuguna, Bhagwati Prasad verfasserin aut Strain and electric field induced metallization in the GaX (X = N, P, As & Sb) monolayer 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We investigate the strain and electric field dependent electronic properties of two dimensional Ga-based group III-V monolayer from the first-principles approach within density functional theory. The energy bandgap of GaX monolayer increases upto the certain value of compressive strain and then decreases. On the other hand, the energy bandgap of GaX monolayer is monotonically decreased with increasing tensile strain and become metallic at the higher value. Furthermore, the perpendicular electric field decreases the energy band gap of unstrained GaX monolayer and shows semiconductor to metal transition. These results suggest that the nature of energy bands and value of energy bandgap in GaX monolayer can be tuned by the biaxial mechanical strain or perpendicular electrical field. Additionally, we have also studied the optical response of unstrained GaX monolayer in term of optical conductivity. These findings may provide valuable information to develop the Ga-based optoelectronic devices and further the understanding of the GaX monolayer. Ga-based group III-V monolayer Electronic structure Band engineering Optical properties Density functional theory Saini, L.K. verfasserin aut Sharma, Rajesh O. verfasserin aut Tiwari, Brajesh verfasserin aut Enthalten in Physica / E Amsterdam [u.a.] : North-Holland, Elsevier Science, 1998 99, Seite 236-243 Online-Ressource (DE-627)266015239 (DE-600)1466595-5 (DE-576)074959875 1386-9477 nnns volume:99 pages:236-243 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_165 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik 50.94 Mikrosystemtechnik Nanotechnologie AR 99 236-243
allfields_unstemmed	10.1016/j.physe.2018.01.018 doi (DE-627)ELV002074923 (ELSEVIER)S1386-9477(17)31752-6 DE-627 ger DE-627 rda eng 530 DE-600 33.68 bkl 50.94 bkl Bahuguna, Bhagwati Prasad verfasserin aut Strain and electric field induced metallization in the GaX (X = N, P, As & Sb) monolayer 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We investigate the strain and electric field dependent electronic properties of two dimensional Ga-based group III-V monolayer from the first-principles approach within density functional theory. The energy bandgap of GaX monolayer increases upto the certain value of compressive strain and then decreases. On the other hand, the energy bandgap of GaX monolayer is monotonically decreased with increasing tensile strain and become metallic at the higher value. Furthermore, the perpendicular electric field decreases the energy band gap of unstrained GaX monolayer and shows semiconductor to metal transition. These results suggest that the nature of energy bands and value of energy bandgap in GaX monolayer can be tuned by the biaxial mechanical strain or perpendicular electrical field. Additionally, we have also studied the optical response of unstrained GaX monolayer in term of optical conductivity. These findings may provide valuable information to develop the Ga-based optoelectronic devices and further the understanding of the GaX monolayer. Ga-based group III-V monolayer Electronic structure Band engineering Optical properties Density functional theory Saini, L.K. verfasserin aut Sharma, Rajesh O. verfasserin aut Tiwari, Brajesh verfasserin aut Enthalten in Physica / E Amsterdam [u.a.] : North-Holland, Elsevier Science, 1998 99, Seite 236-243 Online-Ressource (DE-627)266015239 (DE-600)1466595-5 (DE-576)074959875 1386-9477 nnns volume:99 pages:236-243 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_165 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik 50.94 Mikrosystemtechnik Nanotechnologie AR 99 236-243
allfieldsGer	10.1016/j.physe.2018.01.018 doi (DE-627)ELV002074923 (ELSEVIER)S1386-9477(17)31752-6 DE-627 ger DE-627 rda eng 530 DE-600 33.68 bkl 50.94 bkl Bahuguna, Bhagwati Prasad verfasserin aut Strain and electric field induced metallization in the GaX (X = N, P, As & Sb) monolayer 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We investigate the strain and electric field dependent electronic properties of two dimensional Ga-based group III-V monolayer from the first-principles approach within density functional theory. The energy bandgap of GaX monolayer increases upto the certain value of compressive strain and then decreases. On the other hand, the energy bandgap of GaX monolayer is monotonically decreased with increasing tensile strain and become metallic at the higher value. Furthermore, the perpendicular electric field decreases the energy band gap of unstrained GaX monolayer and shows semiconductor to metal transition. These results suggest that the nature of energy bands and value of energy bandgap in GaX monolayer can be tuned by the biaxial mechanical strain or perpendicular electrical field. Additionally, we have also studied the optical response of unstrained GaX monolayer in term of optical conductivity. These findings may provide valuable information to develop the Ga-based optoelectronic devices and further the understanding of the GaX monolayer. Ga-based group III-V monolayer Electronic structure Band engineering Optical properties Density functional theory Saini, L.K. verfasserin aut Sharma, Rajesh O. verfasserin aut Tiwari, Brajesh verfasserin aut Enthalten in Physica / E Amsterdam [u.a.] : North-Holland, Elsevier Science, 1998 99, Seite 236-243 Online-Ressource (DE-627)266015239 (DE-600)1466595-5 (DE-576)074959875 1386-9477 nnns volume:99 pages:236-243 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_165 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik 50.94 Mikrosystemtechnik Nanotechnologie AR 99 236-243
allfieldsSound	10.1016/j.physe.2018.01.018 doi (DE-627)ELV002074923 (ELSEVIER)S1386-9477(17)31752-6 DE-627 ger DE-627 rda eng 530 DE-600 33.68 bkl 50.94 bkl Bahuguna, Bhagwati Prasad verfasserin aut Strain and electric field induced metallization in the GaX (X = N, P, As & Sb) monolayer 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier We investigate the strain and electric field dependent electronic properties of two dimensional Ga-based group III-V monolayer from the first-principles approach within density functional theory. The energy bandgap of GaX monolayer increases upto the certain value of compressive strain and then decreases. On the other hand, the energy bandgap of GaX monolayer is monotonically decreased with increasing tensile strain and become metallic at the higher value. Furthermore, the perpendicular electric field decreases the energy band gap of unstrained GaX monolayer and shows semiconductor to metal transition. These results suggest that the nature of energy bands and value of energy bandgap in GaX monolayer can be tuned by the biaxial mechanical strain or perpendicular electrical field. Additionally, we have also studied the optical response of unstrained GaX monolayer in term of optical conductivity. These findings may provide valuable information to develop the Ga-based optoelectronic devices and further the understanding of the GaX monolayer. Ga-based group III-V monolayer Electronic structure Band engineering Optical properties Density functional theory Saini, L.K. verfasserin aut Sharma, Rajesh O. verfasserin aut Tiwari, Brajesh verfasserin aut Enthalten in Physica / E Amsterdam [u.a.] : North-Holland, Elsevier Science, 1998 99, Seite 236-243 Online-Ressource (DE-627)266015239 (DE-600)1466595-5 (DE-576)074959875 1386-9477 nnns volume:99 pages:236-243 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_165 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik 50.94 Mikrosystemtechnik Nanotechnologie AR 99 236-243
language	English
source	Enthalten in Physica / E 99, Seite 236-243 volume:99 pages:236-243
sourceStr	Enthalten in Physica / E 99, Seite 236-243 volume:99 pages:236-243
format_phy_str_mv	Article
bklname	Oberflächen Dünne Schichten Grenzflächen Mikrosystemtechnik Nanotechnologie
institution	findex.gbv.de
topic_facet	Ga-based group III-V monolayer Electronic structure Band engineering Optical properties Density functional theory
dewey-raw	530
isfreeaccess_bool	false
container_title	Physica / E
authorswithroles_txt_mv	Bahuguna, Bhagwati Prasad @@aut@@ Saini, L.K. @@aut@@ Sharma, Rajesh O. @@aut@@ Tiwari, Brajesh @@aut@@
publishDateDaySort_date	2018-01-01T00:00:00Z
hierarchy_top_id	266015239
dewey-sort	3530
id	ELV002074923
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV002074923</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230524145845.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230429s2018 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.physe.2018.01.018</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV002074923</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S1386-9477(17)31752-6</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.68</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">50.94</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Bahuguna, Bhagwati Prasad</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Strain and electric field induced metallization in the GaX (X = N, P, As & Sb) monolayer</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2018</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">We investigate the strain and electric field dependent electronic properties of two dimensional Ga-based group III-V monolayer from the first-principles approach within density functional theory. The energy bandgap of GaX monolayer increases upto the certain value of compressive strain and then decreases. On the other hand, the energy bandgap of GaX monolayer is monotonically decreased with increasing tensile strain and become metallic at the higher value. Furthermore, the perpendicular electric field decreases the energy band gap of unstrained GaX monolayer and shows semiconductor to metal transition. These results suggest that the nature of energy bands and value of energy bandgap in GaX monolayer can be tuned by the biaxial mechanical strain or perpendicular electrical field. Additionally, we have also studied the optical response of unstrained GaX monolayer in term of optical conductivity. These findings may provide valuable information to develop the Ga-based optoelectronic devices and further the understanding of the GaX monolayer.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ga-based group III-V monolayer</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronic structure</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Band engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Optical properties</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Density functional theory</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Saini, L.K.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sharma, Rajesh O.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tiwari, Brajesh</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Physica / E</subfield><subfield code="d">Amsterdam [u.a.] : North-Holland, Elsevier Science, 1998</subfield><subfield code="g">99, Seite 236-243</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)266015239</subfield><subfield code="w">(DE-600)1466595-5</subfield><subfield code="w">(DE-576)074959875</subfield><subfield code="x">1386-9477</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:99</subfield><subfield code="g">pages:236-243</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_101</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_165</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2038</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2065</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2068</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2113</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2118</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2147</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2148</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2522</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.68</subfield><subfield code="j">Oberflächen</subfield><subfield code="j">Dünne Schichten</subfield><subfield code="j">Grenzflächen</subfield><subfield code="x">Physik</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">50.94</subfield><subfield code="j">Mikrosystemtechnik</subfield><subfield code="j">Nanotechnologie</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">99</subfield><subfield code="h">236-243</subfield></datafield></record></collection>
author	Bahuguna, Bhagwati Prasad
spellingShingle	Bahuguna, Bhagwati Prasad ddc 530 bkl 33.68 bkl 50.94 misc Ga-based group III-V monolayer misc Electronic structure misc Band engineering misc Optical properties misc Density functional theory Strain and electric field induced metallization in the GaX (X = N, P, As & Sb) monolayer
authorStr	Bahuguna, Bhagwati Prasad
ppnlink_with_tag_str_mv	@@773@@(DE-627)266015239
format	electronic Article
dewey-ones	530 - Physics
delete_txt_mv	keep
author_role	aut aut aut aut
collection	elsevier
remote_str	true
illustrated	Not Illustrated
issn	1386-9477
topic_title	530 DE-600 33.68 bkl 50.94 bkl Strain and electric field induced metallization in the GaX (X = N, P, As & Sb) monolayer Ga-based group III-V monolayer Electronic structure Band engineering Optical properties Density functional theory
topic	ddc 530 bkl 33.68 bkl 50.94 misc Ga-based group III-V monolayer misc Electronic structure misc Band engineering misc Optical properties misc Density functional theory
topic_unstemmed	ddc 530 bkl 33.68 bkl 50.94 misc Ga-based group III-V monolayer misc Electronic structure misc Band engineering misc Optical properties misc Density functional theory
topic_browse	ddc 530 bkl 33.68 bkl 50.94 misc Ga-based group III-V monolayer misc Electronic structure misc Band engineering misc Optical properties misc Density functional theory
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	Physica / E
hierarchy_parent_id	266015239
dewey-tens	530 - Physics
hierarchy_top_title	Physica / E
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)266015239 (DE-600)1466595-5 (DE-576)074959875
title	Strain and electric field induced metallization in the GaX (X = N, P, As & Sb) monolayer
ctrlnum	(DE-627)ELV002074923 (ELSEVIER)S1386-9477(17)31752-6
title_full	Strain and electric field induced metallization in the GaX (X = N, P, As & Sb) monolayer
author_sort	Bahuguna, Bhagwati Prasad
journal	Physica / E
journalStr	Physica / E
lang_code	eng
isOA_bool	false
dewey-hundreds	500 - Science
recordtype	marc
publishDateSort	2018
contenttype_str_mv	zzz
container_start_page	236
author_browse	Bahuguna, Bhagwati Prasad Saini, L.K. Sharma, Rajesh O. Tiwari, Brajesh
container_volume	99
class	530 DE-600 33.68 bkl 50.94 bkl
format_se	Elektronische Aufsätze
author-letter	Bahuguna, Bhagwati Prasad
doi_str_mv	10.1016/j.physe.2018.01.018
dewey-full	530
author2-role	verfasserin
title_sort	strain and electric field induced metallization in the gax (x = n, p, as & sb) monolayer
title_auth	Strain and electric field induced metallization in the GaX (X = N, P, As & Sb) monolayer
abstract	We investigate the strain and electric field dependent electronic properties of two dimensional Ga-based group III-V monolayer from the first-principles approach within density functional theory. The energy bandgap of GaX monolayer increases upto the certain value of compressive strain and then decreases. On the other hand, the energy bandgap of GaX monolayer is monotonically decreased with increasing tensile strain and become metallic at the higher value. Furthermore, the perpendicular electric field decreases the energy band gap of unstrained GaX monolayer and shows semiconductor to metal transition. These results suggest that the nature of energy bands and value of energy bandgap in GaX monolayer can be tuned by the biaxial mechanical strain or perpendicular electrical field. Additionally, we have also studied the optical response of unstrained GaX monolayer in term of optical conductivity. These findings may provide valuable information to develop the Ga-based optoelectronic devices and further the understanding of the GaX monolayer.
abstractGer	We investigate the strain and electric field dependent electronic properties of two dimensional Ga-based group III-V monolayer from the first-principles approach within density functional theory. The energy bandgap of GaX monolayer increases upto the certain value of compressive strain and then decreases. On the other hand, the energy bandgap of GaX monolayer is monotonically decreased with increasing tensile strain and become metallic at the higher value. Furthermore, the perpendicular electric field decreases the energy band gap of unstrained GaX monolayer and shows semiconductor to metal transition. These results suggest that the nature of energy bands and value of energy bandgap in GaX monolayer can be tuned by the biaxial mechanical strain or perpendicular electrical field. Additionally, we have also studied the optical response of unstrained GaX monolayer in term of optical conductivity. These findings may provide valuable information to develop the Ga-based optoelectronic devices and further the understanding of the GaX monolayer.
abstract_unstemmed	We investigate the strain and electric field dependent electronic properties of two dimensional Ga-based group III-V monolayer from the first-principles approach within density functional theory. The energy bandgap of GaX monolayer increases upto the certain value of compressive strain and then decreases. On the other hand, the energy bandgap of GaX monolayer is monotonically decreased with increasing tensile strain and become metallic at the higher value. Furthermore, the perpendicular electric field decreases the energy band gap of unstrained GaX monolayer and shows semiconductor to metal transition. These results suggest that the nature of energy bands and value of energy bandgap in GaX monolayer can be tuned by the biaxial mechanical strain or perpendicular electrical field. Additionally, we have also studied the optical response of unstrained GaX monolayer in term of optical conductivity. These findings may provide valuable information to develop the Ga-based optoelectronic devices and further the understanding of the GaX monolayer.
collection_details	GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_165 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393
title_short	Strain and electric field induced metallization in the GaX (X = N, P, As & Sb) monolayer
remote_bool	true
author2	Saini, L.K. Sharma, Rajesh O. Tiwari, Brajesh
author2Str	Saini, L.K. Sharma, Rajesh O. Tiwari, Brajesh
ppnlink	266015239
mediatype_str_mv	c
isOA_txt	false
hochschulschrift_bool	false
doi_str	10.1016/j.physe.2018.01.018
up_date	2024-07-06T23:32:01.744Z
_version_	1803874438213533696
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV002074923</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230524145845.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230429s2018 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.physe.2018.01.018</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV002074923</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S1386-9477(17)31752-6</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.68</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">50.94</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Bahuguna, Bhagwati Prasad</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Strain and electric field induced metallization in the GaX (X = N, P, As & Sb) monolayer</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2018</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">We investigate the strain and electric field dependent electronic properties of two dimensional Ga-based group III-V monolayer from the first-principles approach within density functional theory. The energy bandgap of GaX monolayer increases upto the certain value of compressive strain and then decreases. On the other hand, the energy bandgap of GaX monolayer is monotonically decreased with increasing tensile strain and become metallic at the higher value. Furthermore, the perpendicular electric field decreases the energy band gap of unstrained GaX monolayer and shows semiconductor to metal transition. These results suggest that the nature of energy bands and value of energy bandgap in GaX monolayer can be tuned by the biaxial mechanical strain or perpendicular electrical field. Additionally, we have also studied the optical response of unstrained GaX monolayer in term of optical conductivity. These findings may provide valuable information to develop the Ga-based optoelectronic devices and further the understanding of the GaX monolayer.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ga-based group III-V monolayer</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronic structure</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Band engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Optical properties</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Density functional theory</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Saini, L.K.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sharma, Rajesh O.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tiwari, Brajesh</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Physica / E</subfield><subfield code="d">Amsterdam [u.a.] : North-Holland, Elsevier Science, 1998</subfield><subfield code="g">99, Seite 236-243</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)266015239</subfield><subfield code="w">(DE-600)1466595-5</subfield><subfield code="w">(DE-576)074959875</subfield><subfield code="x">1386-9477</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:99</subfield><subfield code="g">pages:236-243</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_101</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_165</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2038</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2065</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2068</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2113</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2118</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2147</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2148</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2522</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.68</subfield><subfield code="j">Oberflächen</subfield><subfield code="j">Dünne Schichten</subfield><subfield code="j">Grenzflächen</subfield><subfield code="x">Physik</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">50.94</subfield><subfield code="j">Mikrosystemtechnik</subfield><subfield code="j">Nanotechnologie</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">99</subfield><subfield code="h">236-243</subfield></datafield></record></collection>
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Strain and electric field induced metallization in the GaX (X = N, P, As & Sb) monolayer

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Strain and electric field induced metallization in the GaX (X = N, P, As & Sb) monolayer