Measurement of the response of Silicon Photomultipliers from single photon detection to saturation
The development of Silicon Photomultipliers (SiPM) is very dynamic and a large variety of types exists. Important SiPM characteristics include the size and number of pixels, the gain, the photon detection efficiency (PDE), the recovery time, and correlated noise. SiPMs are particularly suitable for...
Ausführliche Beschreibung
Autor*in: |
Weitzel, Q. [verfasserIn] Bernhard, P. [verfasserIn] Brogna, A.S. [verfasserIn] Degele, R. [verfasserIn] Krause, S. [verfasserIn] Schäfer, U. [verfasserIn] Tapprogge, S. [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2018 |
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Schlagwörter: |
Silicon Photomultiplier (SiPM) |
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Übergeordnetes Werk: |
Enthalten in: Nuclear instruments & methods in physics research / A - Amsterdam : North-Holland Publ. Co., 1984, 936, Seite 558-560 |
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Übergeordnetes Werk: |
volume:936 ; pages:558-560 |
DOI / URN: |
10.1016/j.nima.2018.10.074 |
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Katalog-ID: |
ELV002454254 |
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245 | 1 | 0 | |a Measurement of the response of Silicon Photomultipliers from single photon detection to saturation |
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520 | |a The development of Silicon Photomultipliers (SiPM) is very dynamic and a large variety of types exists. Important SiPM characteristics include the size and number of pixels, the gain, the photon detection efficiency (PDE), the recovery time, and correlated noise. SiPMs are particularly suitable for single-photon detection and low-intensity exposures. For photon numbers (PDE corrected) reaching the number of pixels, however, the sensors saturate. In this work, we present comprehensive response measurements for state-of-the-art SiPMs using an experimental setup based on a tunable picosecond laser. Several models are applied to the measured response curves, taking particularly correlated noise and saturation effects into account. Sensors with different numbers of pixels and different design are compared, some of which exhibit an over-saturation behavior. The results are discussed in the context of high-granularity calorimeters developed for future particle physics experiments employing millions of SiPMs. For these projects the full dynamic range of the sensors has to be exploited, thus an understanding and calibration of the saturation behavior is crucial. | ||
650 | 4 | |a Semiconductor photo detector | |
650 | 4 | |a Silicon Photomultiplier (SiPM) | |
650 | 4 | |a Multi Pixel Photon Counter (MPPC) | |
650 | 4 | |a Dynamic range | |
700 | 1 | |a Bernhard, P. |e verfasserin |4 aut | |
700 | 1 | |a Brogna, A.S. |e verfasserin |4 aut | |
700 | 1 | |a Degele, R. |e verfasserin |4 aut | |
700 | 1 | |a Krause, S. |e verfasserin |4 aut | |
700 | 1 | |a Schäfer, U. |e verfasserin |4 aut | |
700 | 1 | |a Tapprogge, S. |e verfasserin |4 aut | |
773 | 0 | 8 | |i Enthalten in |t Nuclear instruments & methods in physics research / A |d Amsterdam : North-Holland Publ. Co., 1984 |g 936, Seite 558-560 |h Online-Ressource |w (DE-627)266014666 |w (DE-600)1466532-3 |w (DE-576)074959743 |x 0168-9002 |7 nnns |
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2018 |
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10.1016/j.nima.2018.10.074 doi (DE-627)ELV002454254 (ELSEVIER)S0168-9002(18)31388-3 DE-627 ger DE-627 rda eng 530 DE-600 33.05 bkl 33.07 bkl 33.40 bkl Weitzel, Q. verfasserin aut Measurement of the response of Silicon Photomultipliers from single photon detection to saturation 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The development of Silicon Photomultipliers (SiPM) is very dynamic and a large variety of types exists. Important SiPM characteristics include the size and number of pixels, the gain, the photon detection efficiency (PDE), the recovery time, and correlated noise. SiPMs are particularly suitable for single-photon detection and low-intensity exposures. For photon numbers (PDE corrected) reaching the number of pixels, however, the sensors saturate. In this work, we present comprehensive response measurements for state-of-the-art SiPMs using an experimental setup based on a tunable picosecond laser. Several models are applied to the measured response curves, taking particularly correlated noise and saturation effects into account. Sensors with different numbers of pixels and different design are compared, some of which exhibit an over-saturation behavior. The results are discussed in the context of high-granularity calorimeters developed for future particle physics experiments employing millions of SiPMs. For these projects the full dynamic range of the sensors has to be exploited, thus an understanding and calibration of the saturation behavior is crucial. Semiconductor photo detector Silicon Photomultiplier (SiPM) Multi Pixel Photon Counter (MPPC) Dynamic range Bernhard, P. verfasserin aut Brogna, A.S. verfasserin aut Degele, R. verfasserin aut Krause, S. verfasserin aut Schäfer, U. verfasserin aut Tapprogge, S. verfasserin aut Enthalten in Nuclear instruments & methods in physics research / A Amsterdam : North-Holland Publ. Co., 1984 936, Seite 558-560 Online-Ressource (DE-627)266014666 (DE-600)1466532-3 (DE-576)074959743 0168-9002 nnns volume:936 pages:558-560 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.05 Experimentalphysik 33.07 Spektroskopie 33.40 Kernphysik AR 936 558-560 |
spelling |
10.1016/j.nima.2018.10.074 doi (DE-627)ELV002454254 (ELSEVIER)S0168-9002(18)31388-3 DE-627 ger DE-627 rda eng 530 DE-600 33.05 bkl 33.07 bkl 33.40 bkl Weitzel, Q. verfasserin aut Measurement of the response of Silicon Photomultipliers from single photon detection to saturation 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The development of Silicon Photomultipliers (SiPM) is very dynamic and a large variety of types exists. Important SiPM characteristics include the size and number of pixels, the gain, the photon detection efficiency (PDE), the recovery time, and correlated noise. SiPMs are particularly suitable for single-photon detection and low-intensity exposures. For photon numbers (PDE corrected) reaching the number of pixels, however, the sensors saturate. In this work, we present comprehensive response measurements for state-of-the-art SiPMs using an experimental setup based on a tunable picosecond laser. Several models are applied to the measured response curves, taking particularly correlated noise and saturation effects into account. Sensors with different numbers of pixels and different design are compared, some of which exhibit an over-saturation behavior. The results are discussed in the context of high-granularity calorimeters developed for future particle physics experiments employing millions of SiPMs. For these projects the full dynamic range of the sensors has to be exploited, thus an understanding and calibration of the saturation behavior is crucial. Semiconductor photo detector Silicon Photomultiplier (SiPM) Multi Pixel Photon Counter (MPPC) Dynamic range Bernhard, P. verfasserin aut Brogna, A.S. verfasserin aut Degele, R. verfasserin aut Krause, S. verfasserin aut Schäfer, U. verfasserin aut Tapprogge, S. verfasserin aut Enthalten in Nuclear instruments & methods in physics research / A Amsterdam : North-Holland Publ. Co., 1984 936, Seite 558-560 Online-Ressource (DE-627)266014666 (DE-600)1466532-3 (DE-576)074959743 0168-9002 nnns volume:936 pages:558-560 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.05 Experimentalphysik 33.07 Spektroskopie 33.40 Kernphysik AR 936 558-560 |
allfields_unstemmed |
10.1016/j.nima.2018.10.074 doi (DE-627)ELV002454254 (ELSEVIER)S0168-9002(18)31388-3 DE-627 ger DE-627 rda eng 530 DE-600 33.05 bkl 33.07 bkl 33.40 bkl Weitzel, Q. verfasserin aut Measurement of the response of Silicon Photomultipliers from single photon detection to saturation 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The development of Silicon Photomultipliers (SiPM) is very dynamic and a large variety of types exists. Important SiPM characteristics include the size and number of pixels, the gain, the photon detection efficiency (PDE), the recovery time, and correlated noise. SiPMs are particularly suitable for single-photon detection and low-intensity exposures. For photon numbers (PDE corrected) reaching the number of pixels, however, the sensors saturate. In this work, we present comprehensive response measurements for state-of-the-art SiPMs using an experimental setup based on a tunable picosecond laser. Several models are applied to the measured response curves, taking particularly correlated noise and saturation effects into account. Sensors with different numbers of pixels and different design are compared, some of which exhibit an over-saturation behavior. The results are discussed in the context of high-granularity calorimeters developed for future particle physics experiments employing millions of SiPMs. For these projects the full dynamic range of the sensors has to be exploited, thus an understanding and calibration of the saturation behavior is crucial. Semiconductor photo detector Silicon Photomultiplier (SiPM) Multi Pixel Photon Counter (MPPC) Dynamic range Bernhard, P. verfasserin aut Brogna, A.S. verfasserin aut Degele, R. verfasserin aut Krause, S. verfasserin aut Schäfer, U. verfasserin aut Tapprogge, S. verfasserin aut Enthalten in Nuclear instruments & methods in physics research / A Amsterdam : North-Holland Publ. Co., 1984 936, Seite 558-560 Online-Ressource (DE-627)266014666 (DE-600)1466532-3 (DE-576)074959743 0168-9002 nnns volume:936 pages:558-560 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.05 Experimentalphysik 33.07 Spektroskopie 33.40 Kernphysik AR 936 558-560 |
allfieldsGer |
10.1016/j.nima.2018.10.074 doi (DE-627)ELV002454254 (ELSEVIER)S0168-9002(18)31388-3 DE-627 ger DE-627 rda eng 530 DE-600 33.05 bkl 33.07 bkl 33.40 bkl Weitzel, Q. verfasserin aut Measurement of the response of Silicon Photomultipliers from single photon detection to saturation 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The development of Silicon Photomultipliers (SiPM) is very dynamic and a large variety of types exists. Important SiPM characteristics include the size and number of pixels, the gain, the photon detection efficiency (PDE), the recovery time, and correlated noise. SiPMs are particularly suitable for single-photon detection and low-intensity exposures. For photon numbers (PDE corrected) reaching the number of pixels, however, the sensors saturate. In this work, we present comprehensive response measurements for state-of-the-art SiPMs using an experimental setup based on a tunable picosecond laser. Several models are applied to the measured response curves, taking particularly correlated noise and saturation effects into account. Sensors with different numbers of pixels and different design are compared, some of which exhibit an over-saturation behavior. The results are discussed in the context of high-granularity calorimeters developed for future particle physics experiments employing millions of SiPMs. For these projects the full dynamic range of the sensors has to be exploited, thus an understanding and calibration of the saturation behavior is crucial. Semiconductor photo detector Silicon Photomultiplier (SiPM) Multi Pixel Photon Counter (MPPC) Dynamic range Bernhard, P. verfasserin aut Brogna, A.S. verfasserin aut Degele, R. verfasserin aut Krause, S. verfasserin aut Schäfer, U. verfasserin aut Tapprogge, S. verfasserin aut Enthalten in Nuclear instruments & methods in physics research / A Amsterdam : North-Holland Publ. Co., 1984 936, Seite 558-560 Online-Ressource (DE-627)266014666 (DE-600)1466532-3 (DE-576)074959743 0168-9002 nnns volume:936 pages:558-560 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.05 Experimentalphysik 33.07 Spektroskopie 33.40 Kernphysik AR 936 558-560 |
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10.1016/j.nima.2018.10.074 doi (DE-627)ELV002454254 (ELSEVIER)S0168-9002(18)31388-3 DE-627 ger DE-627 rda eng 530 DE-600 33.05 bkl 33.07 bkl 33.40 bkl Weitzel, Q. verfasserin aut Measurement of the response of Silicon Photomultipliers from single photon detection to saturation 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The development of Silicon Photomultipliers (SiPM) is very dynamic and a large variety of types exists. Important SiPM characteristics include the size and number of pixels, the gain, the photon detection efficiency (PDE), the recovery time, and correlated noise. SiPMs are particularly suitable for single-photon detection and low-intensity exposures. For photon numbers (PDE corrected) reaching the number of pixels, however, the sensors saturate. In this work, we present comprehensive response measurements for state-of-the-art SiPMs using an experimental setup based on a tunable picosecond laser. Several models are applied to the measured response curves, taking particularly correlated noise and saturation effects into account. Sensors with different numbers of pixels and different design are compared, some of which exhibit an over-saturation behavior. The results are discussed in the context of high-granularity calorimeters developed for future particle physics experiments employing millions of SiPMs. For these projects the full dynamic range of the sensors has to be exploited, thus an understanding and calibration of the saturation behavior is crucial. Semiconductor photo detector Silicon Photomultiplier (SiPM) Multi Pixel Photon Counter (MPPC) Dynamic range Bernhard, P. verfasserin aut Brogna, A.S. verfasserin aut Degele, R. verfasserin aut Krause, S. verfasserin aut Schäfer, U. verfasserin aut Tapprogge, S. verfasserin aut Enthalten in Nuclear instruments & methods in physics research / A Amsterdam : North-Holland Publ. Co., 1984 936, Seite 558-560 Online-Ressource (DE-627)266014666 (DE-600)1466532-3 (DE-576)074959743 0168-9002 nnns volume:936 pages:558-560 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.05 Experimentalphysik 33.07 Spektroskopie 33.40 Kernphysik AR 936 558-560 |
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530 DE-600 33.05 bkl 33.07 bkl 33.40 bkl Measurement of the response of Silicon Photomultipliers from single photon detection to saturation Semiconductor photo detector Silicon Photomultiplier (SiPM) Multi Pixel Photon Counter (MPPC) Dynamic range |
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ddc 530 bkl 33.05 bkl 33.07 bkl 33.40 misc Semiconductor photo detector misc Silicon Photomultiplier (SiPM) misc Multi Pixel Photon Counter (MPPC) misc Dynamic range |
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ddc 530 bkl 33.05 bkl 33.07 bkl 33.40 misc Semiconductor photo detector misc Silicon Photomultiplier (SiPM) misc Multi Pixel Photon Counter (MPPC) misc Dynamic range |
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ddc 530 bkl 33.05 bkl 33.07 bkl 33.40 misc Semiconductor photo detector misc Silicon Photomultiplier (SiPM) misc Multi Pixel Photon Counter (MPPC) misc Dynamic range |
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Measurement of the response of Silicon Photomultipliers from single photon detection to saturation |
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Measurement of the response of Silicon Photomultipliers from single photon detection to saturation |
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Weitzel, Q. |
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Nuclear instruments & methods in physics research / A |
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Weitzel, Q. Bernhard, P. Brogna, A.S. Degele, R. Krause, S. Schäfer, U. Tapprogge, S. |
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10.1016/j.nima.2018.10.074 |
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measurement of the response of silicon photomultipliers from single photon detection to saturation |
title_auth |
Measurement of the response of Silicon Photomultipliers from single photon detection to saturation |
abstract |
The development of Silicon Photomultipliers (SiPM) is very dynamic and a large variety of types exists. Important SiPM characteristics include the size and number of pixels, the gain, the photon detection efficiency (PDE), the recovery time, and correlated noise. SiPMs are particularly suitable for single-photon detection and low-intensity exposures. For photon numbers (PDE corrected) reaching the number of pixels, however, the sensors saturate. In this work, we present comprehensive response measurements for state-of-the-art SiPMs using an experimental setup based on a tunable picosecond laser. Several models are applied to the measured response curves, taking particularly correlated noise and saturation effects into account. Sensors with different numbers of pixels and different design are compared, some of which exhibit an over-saturation behavior. The results are discussed in the context of high-granularity calorimeters developed for future particle physics experiments employing millions of SiPMs. For these projects the full dynamic range of the sensors has to be exploited, thus an understanding and calibration of the saturation behavior is crucial. |
abstractGer |
The development of Silicon Photomultipliers (SiPM) is very dynamic and a large variety of types exists. Important SiPM characteristics include the size and number of pixels, the gain, the photon detection efficiency (PDE), the recovery time, and correlated noise. SiPMs are particularly suitable for single-photon detection and low-intensity exposures. For photon numbers (PDE corrected) reaching the number of pixels, however, the sensors saturate. In this work, we present comprehensive response measurements for state-of-the-art SiPMs using an experimental setup based on a tunable picosecond laser. Several models are applied to the measured response curves, taking particularly correlated noise and saturation effects into account. Sensors with different numbers of pixels and different design are compared, some of which exhibit an over-saturation behavior. The results are discussed in the context of high-granularity calorimeters developed for future particle physics experiments employing millions of SiPMs. For these projects the full dynamic range of the sensors has to be exploited, thus an understanding and calibration of the saturation behavior is crucial. |
abstract_unstemmed |
The development of Silicon Photomultipliers (SiPM) is very dynamic and a large variety of types exists. Important SiPM characteristics include the size and number of pixels, the gain, the photon detection efficiency (PDE), the recovery time, and correlated noise. SiPMs are particularly suitable for single-photon detection and low-intensity exposures. For photon numbers (PDE corrected) reaching the number of pixels, however, the sensors saturate. In this work, we present comprehensive response measurements for state-of-the-art SiPMs using an experimental setup based on a tunable picosecond laser. Several models are applied to the measured response curves, taking particularly correlated noise and saturation effects into account. Sensors with different numbers of pixels and different design are compared, some of which exhibit an over-saturation behavior. The results are discussed in the context of high-granularity calorimeters developed for future particle physics experiments employing millions of SiPMs. For these projects the full dynamic range of the sensors has to be exploited, thus an understanding and calibration of the saturation behavior is crucial. |
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Measurement of the response of Silicon Photomultipliers from single photon detection to saturation |
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Bernhard, P. Brogna, A.S. Degele, R. Krause, S. Schäfer, U. Tapprogge, S. |
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