First-principles study of dopant stability and related optical properties in CdSiP
CdSiP2 (CSP) with outstanding mid-infrared nonlinear optical properties in the 3–5 μm and 8–12 μm windows has always been expected for application requirement, whereas the inadequate of absorption losses cannot be ignored as practical usage. The defect formation energies, electronic structure charac...
Ausführliche Beschreibung
Autor*in: |
Wang, Ci [verfasserIn] Zhang, Jian [verfasserIn] Hu, Qingmiao [verfasserIn] Tao, Xutang [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2019 |
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Schlagwörter: |
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Übergeordnetes Werk: |
Enthalten in: Journal of alloys and compounds - Lausanne : Elsevier, 1991, 802, Seite 310-317 |
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Übergeordnetes Werk: |
volume:802 ; pages:310-317 |
DOI / URN: |
10.1016/j.jallcom.2019.06.166 |
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Katalog-ID: |
ELV00255822X |
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520 | |a CdSiP2 (CSP) with outstanding mid-infrared nonlinear optical properties in the 3–5 μm and 8–12 μm windows has always been expected for application requirement, whereas the inadequate of absorption losses cannot be ignored as practical usage. The defect formation energies, electronic structure characteristics, structure distortion and related optical properties of CSP with some traditional and basic dopants M= (Mg, Al, Cu, Fe, and Mn) substituting Cd or Si sites are investigated by employing density functional theory (DFT). The calculations show that the energetically and thermally stable states in CSP crystals are Mg0, Al1+, Cu4+, Fe4+, Mn4+ at Cd sites and FeSi 1+ at SiP2 reference states. Fe and Mn dopants at Cd sites bring abundant valences, including 0, +1, +2 and +4 charged states, and result in a mean absorption spectrum increase. New peaks appear in the density of states as the CuCd 4+, FeCd 4+, and MnCd 4+ take shape, and thus affect the absorption spectrum. According to the calculation results, highly localized d orbitals of dopants should be mainly responsible for the absorption aberrance, because they not only lead to a mean absorption spectrum increase, but also bring new absorption peaks affecting the conversion efficiency along X/Y or Z directions. | ||
650 | 4 | |a First-principles calculations | |
650 | 4 | |a CdSiP | |
650 | 4 | |a Doping defects | |
650 | 4 | |a Formation energy | |
650 | 4 | |a Optical property | |
700 | 1 | |a Zhang, Jian |e verfasserin |4 aut | |
700 | 1 | |a Hu, Qingmiao |e verfasserin |4 aut | |
700 | 1 | |a Tao, Xutang |e verfasserin |4 aut | |
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allfields |
10.1016/j.jallcom.2019.06.166 doi (DE-627)ELV00255822X (ELSEVIER)S0925-8388(19)32249-2 DE-627 ger DE-627 rda eng 670 540 DE-600 51.54 bkl 33.61 bkl 35.90 bkl Wang, Ci verfasserin (orcid)0000-0001-6040-3168 aut First-principles study of dopant stability and related optical properties in CdSiP 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier CdSiP2 (CSP) with outstanding mid-infrared nonlinear optical properties in the 3–5 μm and 8–12 μm windows has always been expected for application requirement, whereas the inadequate of absorption losses cannot be ignored as practical usage. The defect formation energies, electronic structure characteristics, structure distortion and related optical properties of CSP with some traditional and basic dopants M= (Mg, Al, Cu, Fe, and Mn) substituting Cd or Si sites are investigated by employing density functional theory (DFT). The calculations show that the energetically and thermally stable states in CSP crystals are Mg0, Al1+, Cu4+, Fe4+, Mn4+ at Cd sites and FeSi 1+ at SiP2 reference states. Fe and Mn dopants at Cd sites bring abundant valences, including 0, +1, +2 and +4 charged states, and result in a mean absorption spectrum increase. New peaks appear in the density of states as the CuCd 4+, FeCd 4+, and MnCd 4+ take shape, and thus affect the absorption spectrum. According to the calculation results, highly localized d orbitals of dopants should be mainly responsible for the absorption aberrance, because they not only lead to a mean absorption spectrum increase, but also bring new absorption peaks affecting the conversion efficiency along X/Y or Z directions. First-principles calculations CdSiP Doping defects Formation energy Optical property Zhang, Jian verfasserin aut Hu, Qingmiao verfasserin aut Tao, Xutang verfasserin aut Enthalten in Journal of alloys and compounds Lausanne : Elsevier, 1991 802, Seite 310-317 Online-Ressource (DE-627)320504646 (DE-600)2012675-X (DE-576)098615009 nnns volume:802 pages:310-317 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.54 Nichteisenmetalle und ihre Legierungen 33.61 Festkörperphysik 35.90 Festkörperchemie AR 802 310-317 |
spelling |
10.1016/j.jallcom.2019.06.166 doi (DE-627)ELV00255822X (ELSEVIER)S0925-8388(19)32249-2 DE-627 ger DE-627 rda eng 670 540 DE-600 51.54 bkl 33.61 bkl 35.90 bkl Wang, Ci verfasserin (orcid)0000-0001-6040-3168 aut First-principles study of dopant stability and related optical properties in CdSiP 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier CdSiP2 (CSP) with outstanding mid-infrared nonlinear optical properties in the 3–5 μm and 8–12 μm windows has always been expected for application requirement, whereas the inadequate of absorption losses cannot be ignored as practical usage. The defect formation energies, electronic structure characteristics, structure distortion and related optical properties of CSP with some traditional and basic dopants M= (Mg, Al, Cu, Fe, and Mn) substituting Cd or Si sites are investigated by employing density functional theory (DFT). The calculations show that the energetically and thermally stable states in CSP crystals are Mg0, Al1+, Cu4+, Fe4+, Mn4+ at Cd sites and FeSi 1+ at SiP2 reference states. Fe and Mn dopants at Cd sites bring abundant valences, including 0, +1, +2 and +4 charged states, and result in a mean absorption spectrum increase. New peaks appear in the density of states as the CuCd 4+, FeCd 4+, and MnCd 4+ take shape, and thus affect the absorption spectrum. According to the calculation results, highly localized d orbitals of dopants should be mainly responsible for the absorption aberrance, because they not only lead to a mean absorption spectrum increase, but also bring new absorption peaks affecting the conversion efficiency along X/Y or Z directions. First-principles calculations CdSiP Doping defects Formation energy Optical property Zhang, Jian verfasserin aut Hu, Qingmiao verfasserin aut Tao, Xutang verfasserin aut Enthalten in Journal of alloys and compounds Lausanne : Elsevier, 1991 802, Seite 310-317 Online-Ressource (DE-627)320504646 (DE-600)2012675-X (DE-576)098615009 nnns volume:802 pages:310-317 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.54 Nichteisenmetalle und ihre Legierungen 33.61 Festkörperphysik 35.90 Festkörperchemie AR 802 310-317 |
allfields_unstemmed |
10.1016/j.jallcom.2019.06.166 doi (DE-627)ELV00255822X (ELSEVIER)S0925-8388(19)32249-2 DE-627 ger DE-627 rda eng 670 540 DE-600 51.54 bkl 33.61 bkl 35.90 bkl Wang, Ci verfasserin (orcid)0000-0001-6040-3168 aut First-principles study of dopant stability and related optical properties in CdSiP 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier CdSiP2 (CSP) with outstanding mid-infrared nonlinear optical properties in the 3–5 μm and 8–12 μm windows has always been expected for application requirement, whereas the inadequate of absorption losses cannot be ignored as practical usage. The defect formation energies, electronic structure characteristics, structure distortion and related optical properties of CSP with some traditional and basic dopants M= (Mg, Al, Cu, Fe, and Mn) substituting Cd or Si sites are investigated by employing density functional theory (DFT). The calculations show that the energetically and thermally stable states in CSP crystals are Mg0, Al1+, Cu4+, Fe4+, Mn4+ at Cd sites and FeSi 1+ at SiP2 reference states. Fe and Mn dopants at Cd sites bring abundant valences, including 0, +1, +2 and +4 charged states, and result in a mean absorption spectrum increase. New peaks appear in the density of states as the CuCd 4+, FeCd 4+, and MnCd 4+ take shape, and thus affect the absorption spectrum. According to the calculation results, highly localized d orbitals of dopants should be mainly responsible for the absorption aberrance, because they not only lead to a mean absorption spectrum increase, but also bring new absorption peaks affecting the conversion efficiency along X/Y or Z directions. First-principles calculations CdSiP Doping defects Formation energy Optical property Zhang, Jian verfasserin aut Hu, Qingmiao verfasserin aut Tao, Xutang verfasserin aut Enthalten in Journal of alloys and compounds Lausanne : Elsevier, 1991 802, Seite 310-317 Online-Ressource (DE-627)320504646 (DE-600)2012675-X (DE-576)098615009 nnns volume:802 pages:310-317 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.54 Nichteisenmetalle und ihre Legierungen 33.61 Festkörperphysik 35.90 Festkörperchemie AR 802 310-317 |
allfieldsGer |
10.1016/j.jallcom.2019.06.166 doi (DE-627)ELV00255822X (ELSEVIER)S0925-8388(19)32249-2 DE-627 ger DE-627 rda eng 670 540 DE-600 51.54 bkl 33.61 bkl 35.90 bkl Wang, Ci verfasserin (orcid)0000-0001-6040-3168 aut First-principles study of dopant stability and related optical properties in CdSiP 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier CdSiP2 (CSP) with outstanding mid-infrared nonlinear optical properties in the 3–5 μm and 8–12 μm windows has always been expected for application requirement, whereas the inadequate of absorption losses cannot be ignored as practical usage. The defect formation energies, electronic structure characteristics, structure distortion and related optical properties of CSP with some traditional and basic dopants M= (Mg, Al, Cu, Fe, and Mn) substituting Cd or Si sites are investigated by employing density functional theory (DFT). The calculations show that the energetically and thermally stable states in CSP crystals are Mg0, Al1+, Cu4+, Fe4+, Mn4+ at Cd sites and FeSi 1+ at SiP2 reference states. Fe and Mn dopants at Cd sites bring abundant valences, including 0, +1, +2 and +4 charged states, and result in a mean absorption spectrum increase. New peaks appear in the density of states as the CuCd 4+, FeCd 4+, and MnCd 4+ take shape, and thus affect the absorption spectrum. According to the calculation results, highly localized d orbitals of dopants should be mainly responsible for the absorption aberrance, because they not only lead to a mean absorption spectrum increase, but also bring new absorption peaks affecting the conversion efficiency along X/Y or Z directions. First-principles calculations CdSiP Doping defects Formation energy Optical property Zhang, Jian verfasserin aut Hu, Qingmiao verfasserin aut Tao, Xutang verfasserin aut Enthalten in Journal of alloys and compounds Lausanne : Elsevier, 1991 802, Seite 310-317 Online-Ressource (DE-627)320504646 (DE-600)2012675-X (DE-576)098615009 nnns volume:802 pages:310-317 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.54 Nichteisenmetalle und ihre Legierungen 33.61 Festkörperphysik 35.90 Festkörperchemie AR 802 310-317 |
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10.1016/j.jallcom.2019.06.166 doi (DE-627)ELV00255822X (ELSEVIER)S0925-8388(19)32249-2 DE-627 ger DE-627 rda eng 670 540 DE-600 51.54 bkl 33.61 bkl 35.90 bkl Wang, Ci verfasserin (orcid)0000-0001-6040-3168 aut First-principles study of dopant stability and related optical properties in CdSiP 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier CdSiP2 (CSP) with outstanding mid-infrared nonlinear optical properties in the 3–5 μm and 8–12 μm windows has always been expected for application requirement, whereas the inadequate of absorption losses cannot be ignored as practical usage. The defect formation energies, electronic structure characteristics, structure distortion and related optical properties of CSP with some traditional and basic dopants M= (Mg, Al, Cu, Fe, and Mn) substituting Cd or Si sites are investigated by employing density functional theory (DFT). The calculations show that the energetically and thermally stable states in CSP crystals are Mg0, Al1+, Cu4+, Fe4+, Mn4+ at Cd sites and FeSi 1+ at SiP2 reference states. Fe and Mn dopants at Cd sites bring abundant valences, including 0, +1, +2 and +4 charged states, and result in a mean absorption spectrum increase. New peaks appear in the density of states as the CuCd 4+, FeCd 4+, and MnCd 4+ take shape, and thus affect the absorption spectrum. According to the calculation results, highly localized d orbitals of dopants should be mainly responsible for the absorption aberrance, because they not only lead to a mean absorption spectrum increase, but also bring new absorption peaks affecting the conversion efficiency along X/Y or Z directions. First-principles calculations CdSiP Doping defects Formation energy Optical property Zhang, Jian verfasserin aut Hu, Qingmiao verfasserin aut Tao, Xutang verfasserin aut Enthalten in Journal of alloys and compounds Lausanne : Elsevier, 1991 802, Seite 310-317 Online-Ressource (DE-627)320504646 (DE-600)2012675-X (DE-576)098615009 nnns volume:802 pages:310-317 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.54 Nichteisenmetalle und ihre Legierungen 33.61 Festkörperphysik 35.90 Festkörperchemie AR 802 310-317 |
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670 540 DE-600 51.54 bkl 33.61 bkl 35.90 bkl First-principles study of dopant stability and related optical properties in CdSiP First-principles calculations CdSiP Doping defects Formation energy Optical property |
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first-principles study of dopant stability and related optical properties in cdsip |
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First-principles study of dopant stability and related optical properties in CdSiP |
abstract |
CdSiP2 (CSP) with outstanding mid-infrared nonlinear optical properties in the 3–5 μm and 8–12 μm windows has always been expected for application requirement, whereas the inadequate of absorption losses cannot be ignored as practical usage. The defect formation energies, electronic structure characteristics, structure distortion and related optical properties of CSP with some traditional and basic dopants M= (Mg, Al, Cu, Fe, and Mn) substituting Cd or Si sites are investigated by employing density functional theory (DFT). The calculations show that the energetically and thermally stable states in CSP crystals are Mg0, Al1+, Cu4+, Fe4+, Mn4+ at Cd sites and FeSi 1+ at SiP2 reference states. Fe and Mn dopants at Cd sites bring abundant valences, including 0, +1, +2 and +4 charged states, and result in a mean absorption spectrum increase. New peaks appear in the density of states as the CuCd 4+, FeCd 4+, and MnCd 4+ take shape, and thus affect the absorption spectrum. According to the calculation results, highly localized d orbitals of dopants should be mainly responsible for the absorption aberrance, because they not only lead to a mean absorption spectrum increase, but also bring new absorption peaks affecting the conversion efficiency along X/Y or Z directions. |
abstractGer |
CdSiP2 (CSP) with outstanding mid-infrared nonlinear optical properties in the 3–5 μm and 8–12 μm windows has always been expected for application requirement, whereas the inadequate of absorption losses cannot be ignored as practical usage. The defect formation energies, electronic structure characteristics, structure distortion and related optical properties of CSP with some traditional and basic dopants M= (Mg, Al, Cu, Fe, and Mn) substituting Cd or Si sites are investigated by employing density functional theory (DFT). The calculations show that the energetically and thermally stable states in CSP crystals are Mg0, Al1+, Cu4+, Fe4+, Mn4+ at Cd sites and FeSi 1+ at SiP2 reference states. Fe and Mn dopants at Cd sites bring abundant valences, including 0, +1, +2 and +4 charged states, and result in a mean absorption spectrum increase. New peaks appear in the density of states as the CuCd 4+, FeCd 4+, and MnCd 4+ take shape, and thus affect the absorption spectrum. According to the calculation results, highly localized d orbitals of dopants should be mainly responsible for the absorption aberrance, because they not only lead to a mean absorption spectrum increase, but also bring new absorption peaks affecting the conversion efficiency along X/Y or Z directions. |
abstract_unstemmed |
CdSiP2 (CSP) with outstanding mid-infrared nonlinear optical properties in the 3–5 μm and 8–12 μm windows has always been expected for application requirement, whereas the inadequate of absorption losses cannot be ignored as practical usage. The defect formation energies, electronic structure characteristics, structure distortion and related optical properties of CSP with some traditional and basic dopants M= (Mg, Al, Cu, Fe, and Mn) substituting Cd or Si sites are investigated by employing density functional theory (DFT). The calculations show that the energetically and thermally stable states in CSP crystals are Mg0, Al1+, Cu4+, Fe4+, Mn4+ at Cd sites and FeSi 1+ at SiP2 reference states. Fe and Mn dopants at Cd sites bring abundant valences, including 0, +1, +2 and +4 charged states, and result in a mean absorption spectrum increase. New peaks appear in the density of states as the CuCd 4+, FeCd 4+, and MnCd 4+ take shape, and thus affect the absorption spectrum. According to the calculation results, highly localized d orbitals of dopants should be mainly responsible for the absorption aberrance, because they not only lead to a mean absorption spectrum increase, but also bring new absorption peaks affecting the conversion efficiency along X/Y or Z directions. |
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