Mitigating graphene etching on SiO

Fluorination is a promising functionalization method for bandgap opening in graphene on SiO2 substrates. Exposure to XeF2 is a simple approach among several techniques. However etching of the graphene layer occurs. We observed that the mechanism behind etching is the interaction of fluorine containi...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Copetti, G. [verfasserIn] Nunes, E.H. [verfasserIn] Soares, G.V. [verfasserIn] Radtke, C. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2019

Schlagwörter:	Carbon materials XPS Surfaces Graphene Fluorination

Übergeordnetes Werk:	Enthalten in: Materials letters - New York, NY [u.a.] : Elsevier, 1982, 252, Seite 11-14
Übergeordnetes Werk:	volume:252 ; pages:11-14

DOI / URN:	10.1016/j.matlet.2019.05.086

Katalog-ID:	ELV002565927

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allfields	10.1016/j.matlet.2019.05.086 doi (DE-627)ELV002565927 (ELSEVIER)S0167-577X(19)30798-0 DE-627 ger DE-627 rda eng 530 600 670 DE-600 51.00 bkl Copetti, G. verfasserin (orcid)0000-0003-3418-8841 aut Mitigating graphene etching on SiO 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Fluorination is a promising functionalization method for bandgap opening in graphene on SiO2 substrates. Exposure to XeF2 is a simple approach among several techniques. However etching of the graphene layer occurs. We observed that the mechanism behind etching is the interaction of fluorine containing species with the underlying SiO2. Pulsed XeF2 exposure is shown to suppress etching, resulting in high-quality and homogeneous fluorographene in large areas. Carbon materials XPS Surfaces Graphene Fluorination Nunes, E.H. verfasserin aut Soares, G.V. verfasserin aut Radtke, C. verfasserin (orcid)0000-0003-3469-4920 aut Enthalten in Materials letters New York, NY [u.a.] : Elsevier, 1982 252, Seite 11-14 Online-Ressource (DE-627)302719407 (DE-600)1491964-3 (DE-576)259483974 1873-4979 nnns volume:252 pages:11-14 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.00 Werkstoffkunde: Allgemeines AR 252 11-14
spelling	10.1016/j.matlet.2019.05.086 doi (DE-627)ELV002565927 (ELSEVIER)S0167-577X(19)30798-0 DE-627 ger DE-627 rda eng 530 600 670 DE-600 51.00 bkl Copetti, G. verfasserin (orcid)0000-0003-3418-8841 aut Mitigating graphene etching on SiO 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Fluorination is a promising functionalization method for bandgap opening in graphene on SiO2 substrates. Exposure to XeF2 is a simple approach among several techniques. However etching of the graphene layer occurs. We observed that the mechanism behind etching is the interaction of fluorine containing species with the underlying SiO2. Pulsed XeF2 exposure is shown to suppress etching, resulting in high-quality and homogeneous fluorographene in large areas. Carbon materials XPS Surfaces Graphene Fluorination Nunes, E.H. verfasserin aut Soares, G.V. verfasserin aut Radtke, C. verfasserin (orcid)0000-0003-3469-4920 aut Enthalten in Materials letters New York, NY [u.a.] : Elsevier, 1982 252, Seite 11-14 Online-Ressource (DE-627)302719407 (DE-600)1491964-3 (DE-576)259483974 1873-4979 nnns volume:252 pages:11-14 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.00 Werkstoffkunde: Allgemeines AR 252 11-14
allfields_unstemmed	10.1016/j.matlet.2019.05.086 doi (DE-627)ELV002565927 (ELSEVIER)S0167-577X(19)30798-0 DE-627 ger DE-627 rda eng 530 600 670 DE-600 51.00 bkl Copetti, G. verfasserin (orcid)0000-0003-3418-8841 aut Mitigating graphene etching on SiO 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Fluorination is a promising functionalization method for bandgap opening in graphene on SiO2 substrates. Exposure to XeF2 is a simple approach among several techniques. However etching of the graphene layer occurs. We observed that the mechanism behind etching is the interaction of fluorine containing species with the underlying SiO2. Pulsed XeF2 exposure is shown to suppress etching, resulting in high-quality and homogeneous fluorographene in large areas. Carbon materials XPS Surfaces Graphene Fluorination Nunes, E.H. verfasserin aut Soares, G.V. verfasserin aut Radtke, C. verfasserin (orcid)0000-0003-3469-4920 aut Enthalten in Materials letters New York, NY [u.a.] : Elsevier, 1982 252, Seite 11-14 Online-Ressource (DE-627)302719407 (DE-600)1491964-3 (DE-576)259483974 1873-4979 nnns volume:252 pages:11-14 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.00 Werkstoffkunde: Allgemeines AR 252 11-14
allfieldsGer	10.1016/j.matlet.2019.05.086 doi (DE-627)ELV002565927 (ELSEVIER)S0167-577X(19)30798-0 DE-627 ger DE-627 rda eng 530 600 670 DE-600 51.00 bkl Copetti, G. verfasserin (orcid)0000-0003-3418-8841 aut Mitigating graphene etching on SiO 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Fluorination is a promising functionalization method for bandgap opening in graphene on SiO2 substrates. Exposure to XeF2 is a simple approach among several techniques. However etching of the graphene layer occurs. We observed that the mechanism behind etching is the interaction of fluorine containing species with the underlying SiO2. Pulsed XeF2 exposure is shown to suppress etching, resulting in high-quality and homogeneous fluorographene in large areas. Carbon materials XPS Surfaces Graphene Fluorination Nunes, E.H. verfasserin aut Soares, G.V. verfasserin aut Radtke, C. verfasserin (orcid)0000-0003-3469-4920 aut Enthalten in Materials letters New York, NY [u.a.] : Elsevier, 1982 252, Seite 11-14 Online-Ressource (DE-627)302719407 (DE-600)1491964-3 (DE-576)259483974 1873-4979 nnns volume:252 pages:11-14 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.00 Werkstoffkunde: Allgemeines AR 252 11-14
allfieldsSound	10.1016/j.matlet.2019.05.086 doi (DE-627)ELV002565927 (ELSEVIER)S0167-577X(19)30798-0 DE-627 ger DE-627 rda eng 530 600 670 DE-600 51.00 bkl Copetti, G. verfasserin (orcid)0000-0003-3418-8841 aut Mitigating graphene etching on SiO 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Fluorination is a promising functionalization method for bandgap opening in graphene on SiO2 substrates. Exposure to XeF2 is a simple approach among several techniques. However etching of the graphene layer occurs. We observed that the mechanism behind etching is the interaction of fluorine containing species with the underlying SiO2. Pulsed XeF2 exposure is shown to suppress etching, resulting in high-quality and homogeneous fluorographene in large areas. Carbon materials XPS Surfaces Graphene Fluorination Nunes, E.H. verfasserin aut Soares, G.V. verfasserin aut Radtke, C. verfasserin (orcid)0000-0003-3469-4920 aut Enthalten in Materials letters New York, NY [u.a.] : Elsevier, 1982 252, Seite 11-14 Online-Ressource (DE-627)302719407 (DE-600)1491964-3 (DE-576)259483974 1873-4979 nnns volume:252 pages:11-14 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.00 Werkstoffkunde: Allgemeines AR 252 11-14
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spellingShingle	Copetti, G. ddc 530 bkl 51.00 misc Carbon materials misc XPS misc Surfaces misc Graphene misc Fluorination Mitigating graphene etching on SiO
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title	Mitigating graphene etching on SiO
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title_sort	mitigating graphene etching on sio
title_auth	Mitigating graphene etching on SiO
abstract	Fluorination is a promising functionalization method for bandgap opening in graphene on SiO2 substrates. Exposure to XeF2 is a simple approach among several techniques. However etching of the graphene layer occurs. We observed that the mechanism behind etching is the interaction of fluorine containing species with the underlying SiO2. Pulsed XeF2 exposure is shown to suppress etching, resulting in high-quality and homogeneous fluorographene in large areas.
abstractGer	Fluorination is a promising functionalization method for bandgap opening in graphene on SiO2 substrates. Exposure to XeF2 is a simple approach among several techniques. However etching of the graphene layer occurs. We observed that the mechanism behind etching is the interaction of fluorine containing species with the underlying SiO2. Pulsed XeF2 exposure is shown to suppress etching, resulting in high-quality and homogeneous fluorographene in large areas.
abstract_unstemmed	Fluorination is a promising functionalization method for bandgap opening in graphene on SiO2 substrates. Exposure to XeF2 is a simple approach among several techniques. However etching of the graphene layer occurs. We observed that the mechanism behind etching is the interaction of fluorine containing species with the underlying SiO2. Pulsed XeF2 exposure is shown to suppress etching, resulting in high-quality and homogeneous fluorographene in large areas.
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title_short	Mitigating graphene etching on SiO
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up_date	2024-07-06T16:41:56.398Z
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Exposure to XeF2 is a simple approach among several techniques. However etching of the graphene layer occurs. We observed that the mechanism behind etching is the interaction of fluorine containing species with the underlying SiO2. 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Mitigating graphene etching on SiO

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