Improved resistance to thermal fatigue of active metal brazing substrates for silicon carbide power modules using tough silicon nitrides with high thermal conductivity
The effect of temperature cycling from −40 to 250 °C on active metal brazing (AMB) substrates for power modules was investigated using newly developed silicon nitride ceramics with both high thermal conductivity of 140 W m−1 K−1 and superior fracture toughness of 10.5 MPa m1/2. Other types of AMB su...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Miyazaki, Hiroyuki [verfasserIn] Zhou, You [verfasserIn] Iwakiri, Shoji [verfasserIn] Hirotsuru, Hideki [verfasserIn] Hirao, Kiyoshi [verfasserIn] Fukuda, Shinji [verfasserIn] Izu, Noriya [verfasserIn] Hyuga, Hideki [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2018 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Ceramics international - Amsterdam [u.a.] : Elsevier Science, 1995, 44, Seite 8870-8876 |
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| Übergeordnetes Werk: |
volume:44 ; pages:8870-8876 |
| DOI / URN: |
10.1016/j.ceramint.2018.02.072 |
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| Katalog-ID: |
ELV002585804 |
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| 245 | 1 | 0 | |a Improved resistance to thermal fatigue of active metal brazing substrates for silicon carbide power modules using tough silicon nitrides with high thermal conductivity |
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| 520 | |a The effect of temperature cycling from −40 to 250 °C on active metal brazing (AMB) substrates for power modules was investigated using newly developed silicon nitride ceramics with both high thermal conductivity of 140 W m−1 K−1 and superior fracture toughness of 10.5 MPa m1/2. Other types of AMB substrates made of AlN or Si3N4 were also tested for comparison. Both visual inspection and acoustic scanning microscopy (ASM) observation of the new Si3N4-AMB substrates after 1000 cycles revealed almost no cracks. In contrast, the Si3N4-AMB substrates with lower fracture toughness experienced crack initiation beneath the corner of the copper plate. The degradation in the bending strength after 1000 cycles was negligible for the new Si3N4-AMB substrates, whereas the bending strength of the other substrates decreased gradually with each thermal cycle. The endurance of the AMB substrates to thermal fatigue could be improved significantly by employing the new tough Si3N4 with high thermal conductivity. | ||
| 650 | 4 | |a B. Failure analysis | |
| 650 | 4 | |a C. Fatigue | |
| 650 | 4 | |a D. Si | |
| 650 | 4 | |a E. Insulators | |
| 700 | 1 | |a Zhou, You |e verfasserin |4 aut | |
| 700 | 1 | |a Iwakiri, Shoji |e verfasserin |4 aut | |
| 700 | 1 | |a Hirotsuru, Hideki |e verfasserin |4 aut | |
| 700 | 1 | |a Hirao, Kiyoshi |e verfasserin |4 aut | |
| 700 | 1 | |a Fukuda, Shinji |e verfasserin |4 aut | |
| 700 | 1 | |a Izu, Noriya |e verfasserin |4 aut | |
| 700 | 1 | |a Hyuga, Hideki |e verfasserin |4 aut | |
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10.1016/j.ceramint.2018.02.072 doi (DE-627)ELV002585804 (ELSEVIER)S0272-8842(18)30369-9 DE-627 ger DE-627 rda eng 670 DE-600 51.60 bkl 58.45 bkl Miyazaki, Hiroyuki verfasserin aut Improved resistance to thermal fatigue of active metal brazing substrates for silicon carbide power modules using tough silicon nitrides with high thermal conductivity 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The effect of temperature cycling from −40 to 250 °C on active metal brazing (AMB) substrates for power modules was investigated using newly developed silicon nitride ceramics with both high thermal conductivity of 140 W m−1 K−1 and superior fracture toughness of 10.5 MPa m1/2. Other types of AMB substrates made of AlN or Si3N4 were also tested for comparison. Both visual inspection and acoustic scanning microscopy (ASM) observation of the new Si3N4-AMB substrates after 1000 cycles revealed almost no cracks. In contrast, the Si3N4-AMB substrates with lower fracture toughness experienced crack initiation beneath the corner of the copper plate. The degradation in the bending strength after 1000 cycles was negligible for the new Si3N4-AMB substrates, whereas the bending strength of the other substrates decreased gradually with each thermal cycle. The endurance of the AMB substrates to thermal fatigue could be improved significantly by employing the new tough Si3N4 with high thermal conductivity. B. Failure analysis C. Fatigue D. Si E. Insulators Zhou, You verfasserin aut Iwakiri, Shoji verfasserin aut Hirotsuru, Hideki verfasserin aut Hirao, Kiyoshi verfasserin aut Fukuda, Shinji verfasserin aut Izu, Noriya verfasserin aut Hyuga, Hideki verfasserin aut Enthalten in Ceramics international Amsterdam [u.a.] : Elsevier Science, 1995 44, Seite 8870-8876 Online-Ressource (DE-627)320584305 (DE-600)2018052-4 (DE-576)25523063X 0272-8842 nnns volume:44 pages:8870-8876 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde 58.45 Gesteinshüttenkunde AR 44 8870-8876 |
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10.1016/j.ceramint.2018.02.072 doi (DE-627)ELV002585804 (ELSEVIER)S0272-8842(18)30369-9 DE-627 ger DE-627 rda eng 670 DE-600 51.60 bkl 58.45 bkl Miyazaki, Hiroyuki verfasserin aut Improved resistance to thermal fatigue of active metal brazing substrates for silicon carbide power modules using tough silicon nitrides with high thermal conductivity 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The effect of temperature cycling from −40 to 250 °C on active metal brazing (AMB) substrates for power modules was investigated using newly developed silicon nitride ceramics with both high thermal conductivity of 140 W m−1 K−1 and superior fracture toughness of 10.5 MPa m1/2. Other types of AMB substrates made of AlN or Si3N4 were also tested for comparison. Both visual inspection and acoustic scanning microscopy (ASM) observation of the new Si3N4-AMB substrates after 1000 cycles revealed almost no cracks. In contrast, the Si3N4-AMB substrates with lower fracture toughness experienced crack initiation beneath the corner of the copper plate. The degradation in the bending strength after 1000 cycles was negligible for the new Si3N4-AMB substrates, whereas the bending strength of the other substrates decreased gradually with each thermal cycle. The endurance of the AMB substrates to thermal fatigue could be improved significantly by employing the new tough Si3N4 with high thermal conductivity. B. Failure analysis C. Fatigue D. Si E. Insulators Zhou, You verfasserin aut Iwakiri, Shoji verfasserin aut Hirotsuru, Hideki verfasserin aut Hirao, Kiyoshi verfasserin aut Fukuda, Shinji verfasserin aut Izu, Noriya verfasserin aut Hyuga, Hideki verfasserin aut Enthalten in Ceramics international Amsterdam [u.a.] : Elsevier Science, 1995 44, Seite 8870-8876 Online-Ressource (DE-627)320584305 (DE-600)2018052-4 (DE-576)25523063X 0272-8842 nnns volume:44 pages:8870-8876 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde 58.45 Gesteinshüttenkunde AR 44 8870-8876 |
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10.1016/j.ceramint.2018.02.072 doi (DE-627)ELV002585804 (ELSEVIER)S0272-8842(18)30369-9 DE-627 ger DE-627 rda eng 670 DE-600 51.60 bkl 58.45 bkl Miyazaki, Hiroyuki verfasserin aut Improved resistance to thermal fatigue of active metal brazing substrates for silicon carbide power modules using tough silicon nitrides with high thermal conductivity 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The effect of temperature cycling from −40 to 250 °C on active metal brazing (AMB) substrates for power modules was investigated using newly developed silicon nitride ceramics with both high thermal conductivity of 140 W m−1 K−1 and superior fracture toughness of 10.5 MPa m1/2. Other types of AMB substrates made of AlN or Si3N4 were also tested for comparison. Both visual inspection and acoustic scanning microscopy (ASM) observation of the new Si3N4-AMB substrates after 1000 cycles revealed almost no cracks. In contrast, the Si3N4-AMB substrates with lower fracture toughness experienced crack initiation beneath the corner of the copper plate. The degradation in the bending strength after 1000 cycles was negligible for the new Si3N4-AMB substrates, whereas the bending strength of the other substrates decreased gradually with each thermal cycle. The endurance of the AMB substrates to thermal fatigue could be improved significantly by employing the new tough Si3N4 with high thermal conductivity. B. Failure analysis C. Fatigue D. Si E. Insulators Zhou, You verfasserin aut Iwakiri, Shoji verfasserin aut Hirotsuru, Hideki verfasserin aut Hirao, Kiyoshi verfasserin aut Fukuda, Shinji verfasserin aut Izu, Noriya verfasserin aut Hyuga, Hideki verfasserin aut Enthalten in Ceramics international Amsterdam [u.a.] : Elsevier Science, 1995 44, Seite 8870-8876 Online-Ressource (DE-627)320584305 (DE-600)2018052-4 (DE-576)25523063X 0272-8842 nnns volume:44 pages:8870-8876 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde 58.45 Gesteinshüttenkunde AR 44 8870-8876 |
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10.1016/j.ceramint.2018.02.072 doi (DE-627)ELV002585804 (ELSEVIER)S0272-8842(18)30369-9 DE-627 ger DE-627 rda eng 670 DE-600 51.60 bkl 58.45 bkl Miyazaki, Hiroyuki verfasserin aut Improved resistance to thermal fatigue of active metal brazing substrates for silicon carbide power modules using tough silicon nitrides with high thermal conductivity 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The effect of temperature cycling from −40 to 250 °C on active metal brazing (AMB) substrates for power modules was investigated using newly developed silicon nitride ceramics with both high thermal conductivity of 140 W m−1 K−1 and superior fracture toughness of 10.5 MPa m1/2. Other types of AMB substrates made of AlN or Si3N4 were also tested for comparison. Both visual inspection and acoustic scanning microscopy (ASM) observation of the new Si3N4-AMB substrates after 1000 cycles revealed almost no cracks. In contrast, the Si3N4-AMB substrates with lower fracture toughness experienced crack initiation beneath the corner of the copper plate. The degradation in the bending strength after 1000 cycles was negligible for the new Si3N4-AMB substrates, whereas the bending strength of the other substrates decreased gradually with each thermal cycle. The endurance of the AMB substrates to thermal fatigue could be improved significantly by employing the new tough Si3N4 with high thermal conductivity. B. Failure analysis C. Fatigue D. Si E. Insulators Zhou, You verfasserin aut Iwakiri, Shoji verfasserin aut Hirotsuru, Hideki verfasserin aut Hirao, Kiyoshi verfasserin aut Fukuda, Shinji verfasserin aut Izu, Noriya verfasserin aut Hyuga, Hideki verfasserin aut Enthalten in Ceramics international Amsterdam [u.a.] : Elsevier Science, 1995 44, Seite 8870-8876 Online-Ressource (DE-627)320584305 (DE-600)2018052-4 (DE-576)25523063X 0272-8842 nnns volume:44 pages:8870-8876 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde 58.45 Gesteinshüttenkunde AR 44 8870-8876 |
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10.1016/j.ceramint.2018.02.072 doi (DE-627)ELV002585804 (ELSEVIER)S0272-8842(18)30369-9 DE-627 ger DE-627 rda eng 670 DE-600 51.60 bkl 58.45 bkl Miyazaki, Hiroyuki verfasserin aut Improved resistance to thermal fatigue of active metal brazing substrates for silicon carbide power modules using tough silicon nitrides with high thermal conductivity 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The effect of temperature cycling from −40 to 250 °C on active metal brazing (AMB) substrates for power modules was investigated using newly developed silicon nitride ceramics with both high thermal conductivity of 140 W m−1 K−1 and superior fracture toughness of 10.5 MPa m1/2. Other types of AMB substrates made of AlN or Si3N4 were also tested for comparison. Both visual inspection and acoustic scanning microscopy (ASM) observation of the new Si3N4-AMB substrates after 1000 cycles revealed almost no cracks. In contrast, the Si3N4-AMB substrates with lower fracture toughness experienced crack initiation beneath the corner of the copper plate. The degradation in the bending strength after 1000 cycles was negligible for the new Si3N4-AMB substrates, whereas the bending strength of the other substrates decreased gradually with each thermal cycle. The endurance of the AMB substrates to thermal fatigue could be improved significantly by employing the new tough Si3N4 with high thermal conductivity. B. Failure analysis C. Fatigue D. Si E. Insulators Zhou, You verfasserin aut Iwakiri, Shoji verfasserin aut Hirotsuru, Hideki verfasserin aut Hirao, Kiyoshi verfasserin aut Fukuda, Shinji verfasserin aut Izu, Noriya verfasserin aut Hyuga, Hideki verfasserin aut Enthalten in Ceramics international Amsterdam [u.a.] : Elsevier Science, 1995 44, Seite 8870-8876 Online-Ressource (DE-627)320584305 (DE-600)2018052-4 (DE-576)25523063X 0272-8842 nnns volume:44 pages:8870-8876 GBV_USEFLAG_U SYSFLAG_U GBV_ELV GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2008 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde 58.45 Gesteinshüttenkunde AR 44 8870-8876 |
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Miyazaki, Hiroyuki @@aut@@ Zhou, You @@aut@@ Iwakiri, Shoji @@aut@@ Hirotsuru, Hideki @@aut@@ Hirao, Kiyoshi @@aut@@ Fukuda, Shinji @@aut@@ Izu, Noriya @@aut@@ Hyuga, Hideki @@aut@@ |
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Miyazaki, Hiroyuki |
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Miyazaki, Hiroyuki ddc 670 bkl 51.60 bkl 58.45 misc B. Failure analysis misc C. Fatigue misc D. Si misc E. Insulators Improved resistance to thermal fatigue of active metal brazing substrates for silicon carbide power modules using tough silicon nitrides with high thermal conductivity |
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670 DE-600 51.60 bkl 58.45 bkl Improved resistance to thermal fatigue of active metal brazing substrates for silicon carbide power modules using tough silicon nitrides with high thermal conductivity B. Failure analysis C. Fatigue D. Si E. Insulators |
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Improved resistance to thermal fatigue of active metal brazing substrates for silicon carbide power modules using tough silicon nitrides with high thermal conductivity |
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improved resistance to thermal fatigue of active metal brazing substrates for silicon carbide power modules using tough silicon nitrides with high thermal conductivity |
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Improved resistance to thermal fatigue of active metal brazing substrates for silicon carbide power modules using tough silicon nitrides with high thermal conductivity |
| abstract |
The effect of temperature cycling from −40 to 250 °C on active metal brazing (AMB) substrates for power modules was investigated using newly developed silicon nitride ceramics with both high thermal conductivity of 140 W m−1 K−1 and superior fracture toughness of 10.5 MPa m1/2. Other types of AMB substrates made of AlN or Si3N4 were also tested for comparison. Both visual inspection and acoustic scanning microscopy (ASM) observation of the new Si3N4-AMB substrates after 1000 cycles revealed almost no cracks. In contrast, the Si3N4-AMB substrates with lower fracture toughness experienced crack initiation beneath the corner of the copper plate. The degradation in the bending strength after 1000 cycles was negligible for the new Si3N4-AMB substrates, whereas the bending strength of the other substrates decreased gradually with each thermal cycle. The endurance of the AMB substrates to thermal fatigue could be improved significantly by employing the new tough Si3N4 with high thermal conductivity. |
| abstractGer |
The effect of temperature cycling from −40 to 250 °C on active metal brazing (AMB) substrates for power modules was investigated using newly developed silicon nitride ceramics with both high thermal conductivity of 140 W m−1 K−1 and superior fracture toughness of 10.5 MPa m1/2. Other types of AMB substrates made of AlN or Si3N4 were also tested for comparison. Both visual inspection and acoustic scanning microscopy (ASM) observation of the new Si3N4-AMB substrates after 1000 cycles revealed almost no cracks. In contrast, the Si3N4-AMB substrates with lower fracture toughness experienced crack initiation beneath the corner of the copper plate. The degradation in the bending strength after 1000 cycles was negligible for the new Si3N4-AMB substrates, whereas the bending strength of the other substrates decreased gradually with each thermal cycle. The endurance of the AMB substrates to thermal fatigue could be improved significantly by employing the new tough Si3N4 with high thermal conductivity. |
| abstract_unstemmed |
The effect of temperature cycling from −40 to 250 °C on active metal brazing (AMB) substrates for power modules was investigated using newly developed silicon nitride ceramics with both high thermal conductivity of 140 W m−1 K−1 and superior fracture toughness of 10.5 MPa m1/2. Other types of AMB substrates made of AlN or Si3N4 were also tested for comparison. Both visual inspection and acoustic scanning microscopy (ASM) observation of the new Si3N4-AMB substrates after 1000 cycles revealed almost no cracks. In contrast, the Si3N4-AMB substrates with lower fracture toughness experienced crack initiation beneath the corner of the copper plate. The degradation in the bending strength after 1000 cycles was negligible for the new Si3N4-AMB substrates, whereas the bending strength of the other substrates decreased gradually with each thermal cycle. The endurance of the AMB substrates to thermal fatigue could be improved significantly by employing the new tough Si3N4 with high thermal conductivity. |
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Improved resistance to thermal fatigue of active metal brazing substrates for silicon carbide power modules using tough silicon nitrides with high thermal conductivity |
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