Comparison of three nondestructive and contactless techniques for investigations of recombination parameters on an example of silicon samples

This paper presents a comparison of three nondestructive and contactless techniques used for determination of recombination parameters of silicon samples. They are: photoacoustic method, modulated free carriers absorption method and the photothermal radiometry method. In the paper the experimental s...
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Gespeichert in:

Autor*in:	Chrobak, Ł. [verfasserIn] Maliński, M. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2018

Schlagwörter:	Nondestructive techniques Photoacoustics Modulated free carriers absorption Photothermal infrared radiometry Semiconductors Recombination parameters

Übergeordnetes Werk:	Enthalten in: Infrared physics & technology - Amsterdam [u.a.] : Elsevier Science, 1994, 91, Seite 1-7
Übergeordnetes Werk:	volume:91 ; pages:1-7

DOI / URN:	10.1016/j.infrared.2018.03.013

Katalog-ID:	ELV002639645

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245	1	0	\|a Comparison of three nondestructive and contactless techniques for investigations of recombination parameters on an example of silicon samples
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520			\|a This paper presents a comparison of three nondestructive and contactless techniques used for determination of recombination parameters of silicon samples. They are: photoacoustic method, modulated free carriers absorption method and the photothermal radiometry method. In the paper the experimental set-ups used for measurements of the recombination parameters in these methods as also theoretical models used for interpretation of obtained experimental data have been presented and described. The experimental results and their respective fits obtained with these nondestructive techniques are shown and discussed. The values of the recombination parameters obtained with these methods are also presented and compared. Main advantages and disadvantages of presented methods have been discussed.
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650		4	\|a Photoacoustics
650		4	\|a Modulated free carriers absorption
650		4	\|a Photothermal infrared radiometry
650		4	\|a Semiconductors
650		4	\|a Recombination parameters
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allfields	10.1016/j.infrared.2018.03.013 doi (DE-627)ELV002639645 (ELSEVIER)S1350-4495(18)30049-5 DE-627 ger DE-627 rda eng 530 DE-600 50.37 bkl 33.38 bkl 33.07 bkl Chrobak, Ł. verfasserin aut Comparison of three nondestructive and contactless techniques for investigations of recombination parameters on an example of silicon samples 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper presents a comparison of three nondestructive and contactless techniques used for determination of recombination parameters of silicon samples. They are: photoacoustic method, modulated free carriers absorption method and the photothermal radiometry method. In the paper the experimental set-ups used for measurements of the recombination parameters in these methods as also theoretical models used for interpretation of obtained experimental data have been presented and described. The experimental results and their respective fits obtained with these nondestructive techniques are shown and discussed. The values of the recombination parameters obtained with these methods are also presented and compared. Main advantages and disadvantages of presented methods have been discussed. Nondestructive techniques Photoacoustics Modulated free carriers absorption Photothermal infrared radiometry Semiconductors Recombination parameters Maliński, M. verfasserin aut Enthalten in Infrared physics & technology Amsterdam [u.a.] : Elsevier Science, 1994 91, Seite 1-7 Online-Ressource (DE-627)320592146 (DE-600)2019084-0 (DE-576)259271705 nnns volume:91 pages:1-7 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OPC-AST GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.37 Technische Optik 33.38 Quantenoptik nichtlineare Optik 33.07 Spektroskopie AR 91 1-7
spelling	10.1016/j.infrared.2018.03.013 doi (DE-627)ELV002639645 (ELSEVIER)S1350-4495(18)30049-5 DE-627 ger DE-627 rda eng 530 DE-600 50.37 bkl 33.38 bkl 33.07 bkl Chrobak, Ł. verfasserin aut Comparison of three nondestructive and contactless techniques for investigations of recombination parameters on an example of silicon samples 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper presents a comparison of three nondestructive and contactless techniques used for determination of recombination parameters of silicon samples. They are: photoacoustic method, modulated free carriers absorption method and the photothermal radiometry method. In the paper the experimental set-ups used for measurements of the recombination parameters in these methods as also theoretical models used for interpretation of obtained experimental data have been presented and described. The experimental results and their respective fits obtained with these nondestructive techniques are shown and discussed. The values of the recombination parameters obtained with these methods are also presented and compared. Main advantages and disadvantages of presented methods have been discussed. Nondestructive techniques Photoacoustics Modulated free carriers absorption Photothermal infrared radiometry Semiconductors Recombination parameters Maliński, M. verfasserin aut Enthalten in Infrared physics & technology Amsterdam [u.a.] : Elsevier Science, 1994 91, Seite 1-7 Online-Ressource (DE-627)320592146 (DE-600)2019084-0 (DE-576)259271705 nnns volume:91 pages:1-7 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OPC-AST GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.37 Technische Optik 33.38 Quantenoptik nichtlineare Optik 33.07 Spektroskopie AR 91 1-7
allfields_unstemmed	10.1016/j.infrared.2018.03.013 doi (DE-627)ELV002639645 (ELSEVIER)S1350-4495(18)30049-5 DE-627 ger DE-627 rda eng 530 DE-600 50.37 bkl 33.38 bkl 33.07 bkl Chrobak, Ł. verfasserin aut Comparison of three nondestructive and contactless techniques for investigations of recombination parameters on an example of silicon samples 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper presents a comparison of three nondestructive and contactless techniques used for determination of recombination parameters of silicon samples. They are: photoacoustic method, modulated free carriers absorption method and the photothermal radiometry method. In the paper the experimental set-ups used for measurements of the recombination parameters in these methods as also theoretical models used for interpretation of obtained experimental data have been presented and described. The experimental results and their respective fits obtained with these nondestructive techniques are shown and discussed. The values of the recombination parameters obtained with these methods are also presented and compared. Main advantages and disadvantages of presented methods have been discussed. Nondestructive techniques Photoacoustics Modulated free carriers absorption Photothermal infrared radiometry Semiconductors Recombination parameters Maliński, M. verfasserin aut Enthalten in Infrared physics & technology Amsterdam [u.a.] : Elsevier Science, 1994 91, Seite 1-7 Online-Ressource (DE-627)320592146 (DE-600)2019084-0 (DE-576)259271705 nnns volume:91 pages:1-7 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OPC-AST GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.37 Technische Optik 33.38 Quantenoptik nichtlineare Optik 33.07 Spektroskopie AR 91 1-7
allfieldsGer	10.1016/j.infrared.2018.03.013 doi (DE-627)ELV002639645 (ELSEVIER)S1350-4495(18)30049-5 DE-627 ger DE-627 rda eng 530 DE-600 50.37 bkl 33.38 bkl 33.07 bkl Chrobak, Ł. verfasserin aut Comparison of three nondestructive and contactless techniques for investigations of recombination parameters on an example of silicon samples 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper presents a comparison of three nondestructive and contactless techniques used for determination of recombination parameters of silicon samples. They are: photoacoustic method, modulated free carriers absorption method and the photothermal radiometry method. In the paper the experimental set-ups used for measurements of the recombination parameters in these methods as also theoretical models used for interpretation of obtained experimental data have been presented and described. The experimental results and their respective fits obtained with these nondestructive techniques are shown and discussed. The values of the recombination parameters obtained with these methods are also presented and compared. Main advantages and disadvantages of presented methods have been discussed. Nondestructive techniques Photoacoustics Modulated free carriers absorption Photothermal infrared radiometry Semiconductors Recombination parameters Maliński, M. verfasserin aut Enthalten in Infrared physics & technology Amsterdam [u.a.] : Elsevier Science, 1994 91, Seite 1-7 Online-Ressource (DE-627)320592146 (DE-600)2019084-0 (DE-576)259271705 nnns volume:91 pages:1-7 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OPC-AST GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.37 Technische Optik 33.38 Quantenoptik nichtlineare Optik 33.07 Spektroskopie AR 91 1-7
allfieldsSound	10.1016/j.infrared.2018.03.013 doi (DE-627)ELV002639645 (ELSEVIER)S1350-4495(18)30049-5 DE-627 ger DE-627 rda eng 530 DE-600 50.37 bkl 33.38 bkl 33.07 bkl Chrobak, Ł. verfasserin aut Comparison of three nondestructive and contactless techniques for investigations of recombination parameters on an example of silicon samples 2018 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper presents a comparison of three nondestructive and contactless techniques used for determination of recombination parameters of silicon samples. They are: photoacoustic method, modulated free carriers absorption method and the photothermal radiometry method. In the paper the experimental set-ups used for measurements of the recombination parameters in these methods as also theoretical models used for interpretation of obtained experimental data have been presented and described. The experimental results and their respective fits obtained with these nondestructive techniques are shown and discussed. The values of the recombination parameters obtained with these methods are also presented and compared. Main advantages and disadvantages of presented methods have been discussed. Nondestructive techniques Photoacoustics Modulated free carriers absorption Photothermal infrared radiometry Semiconductors Recombination parameters Maliński, M. verfasserin aut Enthalten in Infrared physics & technology Amsterdam [u.a.] : Elsevier Science, 1994 91, Seite 1-7 Online-Ressource (DE-627)320592146 (DE-600)2019084-0 (DE-576)259271705 nnns volume:91 pages:1-7 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OPC-AST GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 50.37 Technische Optik 33.38 Quantenoptik nichtlineare Optik 33.07 Spektroskopie AR 91 1-7
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They are: photoacoustic method, modulated free carriers absorption method and the photothermal radiometry method. In the paper the experimental set-ups used for measurements of the recombination parameters in these methods as also theoretical models used for interpretation of obtained experimental data have been presented and described. The experimental results and their respective fits obtained with these nondestructive techniques are shown and discussed. The values of the recombination parameters obtained with these methods are also presented and compared. 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author	Chrobak, Ł.
spellingShingle	Chrobak, Ł. ddc 530 bkl 50.37 bkl 33.38 bkl 33.07 misc Nondestructive techniques misc Photoacoustics misc Modulated free carriers absorption misc Photothermal infrared radiometry misc Semiconductors misc Recombination parameters Comparison of three nondestructive and contactless techniques for investigations of recombination parameters on an example of silicon samples
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topic_title	530 DE-600 50.37 bkl 33.38 bkl 33.07 bkl Comparison of three nondestructive and contactless techniques for investigations of recombination parameters on an example of silicon samples Nondestructive techniques Photoacoustics Modulated free carriers absorption Photothermal infrared radiometry Semiconductors Recombination parameters
topic	ddc 530 bkl 50.37 bkl 33.38 bkl 33.07 misc Nondestructive techniques misc Photoacoustics misc Modulated free carriers absorption misc Photothermal infrared radiometry misc Semiconductors misc Recombination parameters
topic_unstemmed	ddc 530 bkl 50.37 bkl 33.38 bkl 33.07 misc Nondestructive techniques misc Photoacoustics misc Modulated free carriers absorption misc Photothermal infrared radiometry misc Semiconductors misc Recombination parameters
topic_browse	ddc 530 bkl 50.37 bkl 33.38 bkl 33.07 misc Nondestructive techniques misc Photoacoustics misc Modulated free carriers absorption misc Photothermal infrared radiometry misc Semiconductors misc Recombination parameters
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title	Comparison of three nondestructive and contactless techniques for investigations of recombination parameters on an example of silicon samples
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title_full	Comparison of three nondestructive and contactless techniques for investigations of recombination parameters on an example of silicon samples
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author_browse	Chrobak, Ł. Maliński, M.
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title_sort	comparison of three nondestructive and contactless techniques for investigations of recombination parameters on an example of silicon samples
title_auth	Comparison of three nondestructive and contactless techniques for investigations of recombination parameters on an example of silicon samples
abstract	This paper presents a comparison of three nondestructive and contactless techniques used for determination of recombination parameters of silicon samples. They are: photoacoustic method, modulated free carriers absorption method and the photothermal radiometry method. In the paper the experimental set-ups used for measurements of the recombination parameters in these methods as also theoretical models used for interpretation of obtained experimental data have been presented and described. The experimental results and their respective fits obtained with these nondestructive techniques are shown and discussed. The values of the recombination parameters obtained with these methods are also presented and compared. Main advantages and disadvantages of presented methods have been discussed.
abstractGer	This paper presents a comparison of three nondestructive and contactless techniques used for determination of recombination parameters of silicon samples. They are: photoacoustic method, modulated free carriers absorption method and the photothermal radiometry method. In the paper the experimental set-ups used for measurements of the recombination parameters in these methods as also theoretical models used for interpretation of obtained experimental data have been presented and described. The experimental results and their respective fits obtained with these nondestructive techniques are shown and discussed. The values of the recombination parameters obtained with these methods are also presented and compared. Main advantages and disadvantages of presented methods have been discussed.
abstract_unstemmed	This paper presents a comparison of three nondestructive and contactless techniques used for determination of recombination parameters of silicon samples. They are: photoacoustic method, modulated free carriers absorption method and the photothermal radiometry method. In the paper the experimental set-ups used for measurements of the recombination parameters in these methods as also theoretical models used for interpretation of obtained experimental data have been presented and described. The experimental results and their respective fits obtained with these nondestructive techniques are shown and discussed. The values of the recombination parameters obtained with these methods are also presented and compared. Main advantages and disadvantages of presented methods have been discussed.
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title_short	Comparison of three nondestructive and contactless techniques for investigations of recombination parameters on an example of silicon samples
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up_date	2024-07-06T16:57:06.246Z
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fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV002639645</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230524161411.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230429s2018 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.infrared.2018.03.013</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV002639645</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S1350-4495(18)30049-5</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">50.37</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.38</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.07</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Chrobak, Ł.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Comparison of three nondestructive and contactless techniques for investigations of recombination parameters on an example of silicon samples</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2018</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">This paper presents a comparison of three nondestructive and contactless techniques used for determination of recombination parameters of silicon samples. They are: photoacoustic method, modulated free carriers absorption method and the photothermal radiometry method. In the paper the experimental set-ups used for measurements of the recombination parameters in these methods as also theoretical models used for interpretation of obtained experimental data have been presented and described. The experimental results and their respective fits obtained with these nondestructive techniques are shown and discussed. The values of the recombination parameters obtained with these methods are also presented and compared. Main advantages and disadvantages of presented methods have been discussed.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Nondestructive techniques</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Photoacoustics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Modulated free carriers absorption</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Photothermal infrared radiometry</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Recombination parameters</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Maliński, M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield 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Comparison of three nondestructive and contactless techniques for investigations of recombination parameters on an example of silicon samples

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