Bismuth functionalized GaAs as saturable absorber for passive Q-switching at 1.34 μm

First principles simulations showed bismuth doped GaAs could modify the electronic band structure. Hereby, Bi:GaAs exhibited excellent nonlinear absorption properties at 1.3 μm with a modulation depth of 6.2%, larger than that of pure GaAs. Subsequently, the passively Q-switched Nd:YVO4 lasers were...
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Gespeichert in:

Autor*in:	Pan, Han [verfasserIn] Chu, Hongwei [verfasserIn] Li, Ying [verfasserIn] Li, Guiqiu [verfasserIn] Zhao, Shengzhi [verfasserIn] Li, Dechun [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2019

Schlagwörter:	Bi:GaAs saturable absorber Nonlinear optical response Q-switching Free-carrier recombination

Übergeordnetes Werk:	Enthalten in: Optical materials - Amsterdam [u.a.] : Elsevier Science, 1992, 98
Übergeordnetes Werk:	volume:98

DOI / URN:	10.1016/j.optmat.2019.109457

Katalog-ID:	ELV003276686

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520			\|a First principles simulations showed bismuth doped GaAs could modify the electronic band structure. Hereby, Bi:GaAs exhibited excellent nonlinear absorption properties at 1.3 μm with a modulation depth of 6.2%, larger than that of pure GaAs. Subsequently, the passively Q-switched Nd:YVO4 lasers were demonstrated at 1.34 μm with Bi:GaAs and GaAs the saturable absorbers. Stable pulses with the shortest duration of 64 ns at a repetition rate of 138 kHz were generated with Bi:GaAs saturable absorber. In the meantime, we also observed Bi ion doping accelerates the free-carrier recovery, indicating Bi:GaAs excellent candidant for 1.3 μm pulse generation.
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650		4	\|a Q-switching
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700	1		\|a Zhao, Shengzhi \|e verfasserin \|4 aut
700	1		\|a Li, Dechun \|e verfasserin \|4 aut
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Indexfelder

author_variant	h p hp h c hc y l yl g l gl s z sz d l dl
matchkey_str	article:18731252:2019----::imtfntoaiegaastrbebobrops
hierarchy_sort_str	2019
bklnumber	51.45 33.18 33.38 50.37
publishDate	2019
allfields	10.1016/j.optmat.2019.109457 doi (DE-627)ELV003276686 (ELSEVIER)S0925-3467(19)30677-9 DE-627 ger DE-627 rda eng 530 620 670 DE-600 51.45 bkl 33.18 bkl 33.38 bkl 50.37 bkl Pan, Han verfasserin aut Bismuth functionalized GaAs as saturable absorber for passive Q-switching at 1.34 μm 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier First principles simulations showed bismuth doped GaAs could modify the electronic band structure. Hereby, Bi:GaAs exhibited excellent nonlinear absorption properties at 1.3 μm with a modulation depth of 6.2%, larger than that of pure GaAs. Subsequently, the passively Q-switched Nd:YVO4 lasers were demonstrated at 1.34 μm with Bi:GaAs and GaAs the saturable absorbers. Stable pulses with the shortest duration of 64 ns at a repetition rate of 138 kHz were generated with Bi:GaAs saturable absorber. In the meantime, we also observed Bi ion doping accelerates the free-carrier recovery, indicating Bi:GaAs excellent candidant for 1.3 μm pulse generation. Bi:GaAs saturable absorber Nonlinear optical response Q-switching Free-carrier recombination Chu, Hongwei verfasserin aut Li, Ying verfasserin aut Li, Guiqiu verfasserin aut Zhao, Shengzhi verfasserin aut Li, Dechun verfasserin aut Enthalten in Optical materials Amsterdam [u.a.] : Elsevier Science, 1992 98 Online-Ressource (DE-627)320530175 (DE-600)2015659-5 (DE-576)25948489X 1873-1252 nnns volume:98 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.45 Werkstoffe mit besonderen Eigenschaften 33.18 Optik 33.38 Quantenoptik nichtlineare Optik 50.37 Technische Optik AR 98
spelling	10.1016/j.optmat.2019.109457 doi (DE-627)ELV003276686 (ELSEVIER)S0925-3467(19)30677-9 DE-627 ger DE-627 rda eng 530 620 670 DE-600 51.45 bkl 33.18 bkl 33.38 bkl 50.37 bkl Pan, Han verfasserin aut Bismuth functionalized GaAs as saturable absorber for passive Q-switching at 1.34 μm 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier First principles simulations showed bismuth doped GaAs could modify the electronic band structure. Hereby, Bi:GaAs exhibited excellent nonlinear absorption properties at 1.3 μm with a modulation depth of 6.2%, larger than that of pure GaAs. Subsequently, the passively Q-switched Nd:YVO4 lasers were demonstrated at 1.34 μm with Bi:GaAs and GaAs the saturable absorbers. Stable pulses with the shortest duration of 64 ns at a repetition rate of 138 kHz were generated with Bi:GaAs saturable absorber. In the meantime, we also observed Bi ion doping accelerates the free-carrier recovery, indicating Bi:GaAs excellent candidant for 1.3 μm pulse generation. Bi:GaAs saturable absorber Nonlinear optical response Q-switching Free-carrier recombination Chu, Hongwei verfasserin aut Li, Ying verfasserin aut Li, Guiqiu verfasserin aut Zhao, Shengzhi verfasserin aut Li, Dechun verfasserin aut Enthalten in Optical materials Amsterdam [u.a.] : Elsevier Science, 1992 98 Online-Ressource (DE-627)320530175 (DE-600)2015659-5 (DE-576)25948489X 1873-1252 nnns volume:98 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.45 Werkstoffe mit besonderen Eigenschaften 33.18 Optik 33.38 Quantenoptik nichtlineare Optik 50.37 Technische Optik AR 98
allfields_unstemmed	10.1016/j.optmat.2019.109457 doi (DE-627)ELV003276686 (ELSEVIER)S0925-3467(19)30677-9 DE-627 ger DE-627 rda eng 530 620 670 DE-600 51.45 bkl 33.18 bkl 33.38 bkl 50.37 bkl Pan, Han verfasserin aut Bismuth functionalized GaAs as saturable absorber for passive Q-switching at 1.34 μm 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier First principles simulations showed bismuth doped GaAs could modify the electronic band structure. Hereby, Bi:GaAs exhibited excellent nonlinear absorption properties at 1.3 μm with a modulation depth of 6.2%, larger than that of pure GaAs. Subsequently, the passively Q-switched Nd:YVO4 lasers were demonstrated at 1.34 μm with Bi:GaAs and GaAs the saturable absorbers. Stable pulses with the shortest duration of 64 ns at a repetition rate of 138 kHz were generated with Bi:GaAs saturable absorber. In the meantime, we also observed Bi ion doping accelerates the free-carrier recovery, indicating Bi:GaAs excellent candidant for 1.3 μm pulse generation. Bi:GaAs saturable absorber Nonlinear optical response Q-switching Free-carrier recombination Chu, Hongwei verfasserin aut Li, Ying verfasserin aut Li, Guiqiu verfasserin aut Zhao, Shengzhi verfasserin aut Li, Dechun verfasserin aut Enthalten in Optical materials Amsterdam [u.a.] : Elsevier Science, 1992 98 Online-Ressource (DE-627)320530175 (DE-600)2015659-5 (DE-576)25948489X 1873-1252 nnns volume:98 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.45 Werkstoffe mit besonderen Eigenschaften 33.18 Optik 33.38 Quantenoptik nichtlineare Optik 50.37 Technische Optik AR 98
allfieldsGer	10.1016/j.optmat.2019.109457 doi (DE-627)ELV003276686 (ELSEVIER)S0925-3467(19)30677-9 DE-627 ger DE-627 rda eng 530 620 670 DE-600 51.45 bkl 33.18 bkl 33.38 bkl 50.37 bkl Pan, Han verfasserin aut Bismuth functionalized GaAs as saturable absorber for passive Q-switching at 1.34 μm 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier First principles simulations showed bismuth doped GaAs could modify the electronic band structure. Hereby, Bi:GaAs exhibited excellent nonlinear absorption properties at 1.3 μm with a modulation depth of 6.2%, larger than that of pure GaAs. Subsequently, the passively Q-switched Nd:YVO4 lasers were demonstrated at 1.34 μm with Bi:GaAs and GaAs the saturable absorbers. Stable pulses with the shortest duration of 64 ns at a repetition rate of 138 kHz were generated with Bi:GaAs saturable absorber. In the meantime, we also observed Bi ion doping accelerates the free-carrier recovery, indicating Bi:GaAs excellent candidant for 1.3 μm pulse generation. Bi:GaAs saturable absorber Nonlinear optical response Q-switching Free-carrier recombination Chu, Hongwei verfasserin aut Li, Ying verfasserin aut Li, Guiqiu verfasserin aut Zhao, Shengzhi verfasserin aut Li, Dechun verfasserin aut Enthalten in Optical materials Amsterdam [u.a.] : Elsevier Science, 1992 98 Online-Ressource (DE-627)320530175 (DE-600)2015659-5 (DE-576)25948489X 1873-1252 nnns volume:98 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.45 Werkstoffe mit besonderen Eigenschaften 33.18 Optik 33.38 Quantenoptik nichtlineare Optik 50.37 Technische Optik AR 98
allfieldsSound	10.1016/j.optmat.2019.109457 doi (DE-627)ELV003276686 (ELSEVIER)S0925-3467(19)30677-9 DE-627 ger DE-627 rda eng 530 620 670 DE-600 51.45 bkl 33.18 bkl 33.38 bkl 50.37 bkl Pan, Han verfasserin aut Bismuth functionalized GaAs as saturable absorber for passive Q-switching at 1.34 μm 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier First principles simulations showed bismuth doped GaAs could modify the electronic band structure. Hereby, Bi:GaAs exhibited excellent nonlinear absorption properties at 1.3 μm with a modulation depth of 6.2%, larger than that of pure GaAs. Subsequently, the passively Q-switched Nd:YVO4 lasers were demonstrated at 1.34 μm with Bi:GaAs and GaAs the saturable absorbers. Stable pulses with the shortest duration of 64 ns at a repetition rate of 138 kHz were generated with Bi:GaAs saturable absorber. In the meantime, we also observed Bi ion doping accelerates the free-carrier recovery, indicating Bi:GaAs excellent candidant for 1.3 μm pulse generation. Bi:GaAs saturable absorber Nonlinear optical response Q-switching Free-carrier recombination Chu, Hongwei verfasserin aut Li, Ying verfasserin aut Li, Guiqiu verfasserin aut Zhao, Shengzhi verfasserin aut Li, Dechun verfasserin aut Enthalten in Optical materials Amsterdam [u.a.] : Elsevier Science, 1992 98 Online-Ressource (DE-627)320530175 (DE-600)2015659-5 (DE-576)25948489X 1873-1252 nnns volume:98 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 51.45 Werkstoffe mit besonderen Eigenschaften 33.18 Optik 33.38 Quantenoptik nichtlineare Optik 50.37 Technische Optik AR 98
language	English
source	Enthalten in Optical materials 98 volume:98
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topic_facet	Bi:GaAs saturable absorber Nonlinear optical response Q-switching Free-carrier recombination
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authorswithroles_txt_mv	Pan, Han @@aut@@ Chu, Hongwei @@aut@@ Li, Ying @@aut@@ Li, Guiqiu @@aut@@ Zhao, Shengzhi @@aut@@ Li, Dechun @@aut@@
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author	Pan, Han
spellingShingle	Pan, Han ddc 530 bkl 51.45 bkl 33.18 bkl 33.38 bkl 50.37 misc Bi:GaAs saturable absorber misc Nonlinear optical response misc Q-switching misc Free-carrier recombination Bismuth functionalized GaAs as saturable absorber for passive Q-switching at 1.34 μm
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topic_title	530 620 670 DE-600 51.45 bkl 33.18 bkl 33.38 bkl 50.37 bkl Bismuth functionalized GaAs as saturable absorber for passive Q-switching at 1.34 μm Bi:GaAs saturable absorber Nonlinear optical response Q-switching Free-carrier recombination
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title	Bismuth functionalized GaAs as saturable absorber for passive Q-switching at 1.34 μm
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title_full	Bismuth functionalized GaAs as saturable absorber for passive Q-switching at 1.34 μm
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title_sort	bismuth functionalized gaas as saturable absorber for passive q-switching at 1.34 μm
title_auth	Bismuth functionalized GaAs as saturable absorber for passive Q-switching at 1.34 μm
abstract	First principles simulations showed bismuth doped GaAs could modify the electronic band structure. Hereby, Bi:GaAs exhibited excellent nonlinear absorption properties at 1.3 μm with a modulation depth of 6.2%, larger than that of pure GaAs. Subsequently, the passively Q-switched Nd:YVO4 lasers were demonstrated at 1.34 μm with Bi:GaAs and GaAs the saturable absorbers. Stable pulses with the shortest duration of 64 ns at a repetition rate of 138 kHz were generated with Bi:GaAs saturable absorber. In the meantime, we also observed Bi ion doping accelerates the free-carrier recovery, indicating Bi:GaAs excellent candidant for 1.3 μm pulse generation.
abstractGer	First principles simulations showed bismuth doped GaAs could modify the electronic band structure. Hereby, Bi:GaAs exhibited excellent nonlinear absorption properties at 1.3 μm with a modulation depth of 6.2%, larger than that of pure GaAs. Subsequently, the passively Q-switched Nd:YVO4 lasers were demonstrated at 1.34 μm with Bi:GaAs and GaAs the saturable absorbers. Stable pulses with the shortest duration of 64 ns at a repetition rate of 138 kHz were generated with Bi:GaAs saturable absorber. In the meantime, we also observed Bi ion doping accelerates the free-carrier recovery, indicating Bi:GaAs excellent candidant for 1.3 μm pulse generation.
abstract_unstemmed	First principles simulations showed bismuth doped GaAs could modify the electronic band structure. Hereby, Bi:GaAs exhibited excellent nonlinear absorption properties at 1.3 μm with a modulation depth of 6.2%, larger than that of pure GaAs. Subsequently, the passively Q-switched Nd:YVO4 lasers were demonstrated at 1.34 μm with Bi:GaAs and GaAs the saturable absorbers. Stable pulses with the shortest duration of 64 ns at a repetition rate of 138 kHz were generated with Bi:GaAs saturable absorber. In the meantime, we also observed Bi ion doping accelerates the free-carrier recovery, indicating Bi:GaAs excellent candidant for 1.3 μm pulse generation.
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title_short	Bismuth functionalized GaAs as saturable absorber for passive Q-switching at 1.34 μm
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up_date	2024-07-06T19:05:08.839Z
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Bismuth functionalized GaAs as saturable absorber for passive Q-switching at 1.34 μm

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Bismuth functionalized GaAs as saturable absorber for passive Q-switching at 1.34 μm