Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications

This paper reports the possibility to fabricate transparent diodes with the configuration: Fluorine doped Tin Oxide/n-type copper indium oxide/p-type calcium doped copper indium oxide/Silver with better rectification ratio than that of the diodes with Sn-doped Copper Indium Oxide as the n-counterpar...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Nair, Bindu.G. [verfasserIn] Rahman, Hilal [verfasserIn] K, Aijo John. [verfasserIn] K, Keerthi. [verfasserIn] Shaji, S. [verfasserIn] Okram, G.S. [verfasserIn] Sharma, Vikash [verfasserIn] Philip, Rachel Reena [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2019

Schlagwörter:	Thin film Crystallization Transparent conducting oxide Electrical conductivity Transmittance Transparent diode

Übergeordnetes Werk:	Enthalten in: Thin solid films - Amsterdam [u.a.] : Elsevier, 1967, 693
Übergeordnetes Werk:	volume:693

DOI / URN:	10.1016/j.tsf.2019.137673

Katalog-ID:	ELV003286495

Internformat


LEADER	01000caa a22002652 4500
001	ELV003286495
003	DE-627
005	20230524145413.0
007	cr uuu---uuuuu
008	230430s2019 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.1016/j.tsf.2019.137673 \|2 doi
035			\|a (DE-627)ELV003286495
035			\|a (ELSEVIER)S0040-6090(19)30700-X
040			\|a DE-627 \|b ger \|c DE-627 \|e rda
041			\|a eng
082	0	4	\|a 070 \|a 660 \|q DE-600
084			\|a 33.68 \|2 bkl
100	1		\|a Nair, Bindu.G. \|e verfasserin \|4 aut
245	1	0	\|a Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications
264		1	\|c 2019
336			\|a nicht spezifiziert \|b zzz \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a This paper reports the possibility to fabricate transparent diodes with the configuration: Fluorine doped Tin Oxide/n-type copper indium oxide/p-type calcium doped copper indium oxide/Silver with better rectification ratio than that of the diodes with Sn-doped Copper Indium Oxide as the n-counterpart of p- calcium doped copper indium oxide. The ideality factor and turn on voltage of the former diodes are determined as ~1.1 and ~ 0.68 respectively while for the latter types they are ~2.38 and ~ 0.5 V respectively. In addition to this, the paper details the structural, morphological, optoelectronic and electrical properties of delafossite crystalline p-type calcium doped copper indium oxide thin films deposited by activated reactive evaporation in oxygen plasma followed by post air annealing. The temperature of crystallization of the films obtained here is the lowest crystallization temperature reported for the delafossite formation of this compound till date. Electrical transport mechanisms governing conductivities in the temperature range 55 – 430 K are also investigated.
650		4	\|a Thin film
650		4	\|a Crystallization
650		4	\|a Transparent conducting oxide
650		4	\|a Electrical conductivity
650		4	\|a Transmittance
650		4	\|a Transparent diode
700	1		\|a Rahman, Hilal \|e verfasserin \|4 aut
700	1		\|a K, Aijo John. \|e verfasserin \|4 aut
700	1		\|a K, Keerthi. \|e verfasserin \|4 aut
700	1		\|a Shaji, S. \|e verfasserin \|4 aut
700	1		\|a Okram, G.S. \|e verfasserin \|4 aut
700	1		\|a Sharma, Vikash \|e verfasserin \|4 aut
700	1		\|a Philip, Rachel Reena \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Thin solid films \|d Amsterdam [u.a.] : Elsevier, 1967 \|g 693 \|h Online-Ressource \|w (DE-627)300593503 \|w (DE-600)1482896-0 \|w (DE-576)079165354 \|7 nnns
773	1	8	\|g volume:693
912			\|a GBV_USEFLAG_U
912			\|a SYSFLAG_U
912			\|a GBV_ELV
912			\|a SSG-OLC-PHA
912			\|a SSG-OPC-BBI
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_31
912			\|a GBV_ILN_32
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
912			\|a GBV_ILN_100
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_224
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2056
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2122
912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
912			\|a GBV_ILN_2147
912			\|a GBV_ILN_2148
912			\|a GBV_ILN_2152
912			\|a GBV_ILN_2153
912			\|a GBV_ILN_2190
912			\|a GBV_ILN_2336
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_2522
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4242
912			\|a GBV_ILN_4251
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4326
912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4334
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4393
936	b	k	\|a 33.68 \|j Oberflächen \|j Dünne Schichten \|j Grenzflächen \|x Physik
951			\|a AR
952			\|d 693

Indexfelder

author_variant	b n bn h r hr a j k aj ajk k k kk s s ss g o go v s vs r r p rr rrp
matchkey_str	nairbindugrahmanhilalkaijojohnkkeerthish:2019----:acuicroaecpeiduoiehnimarmsncniaeotasa
hierarchy_sort_str	2019
bklnumber	33.68
publishDate	2019
allfields	10.1016/j.tsf.2019.137673 doi (DE-627)ELV003286495 (ELSEVIER)S0040-6090(19)30700-X DE-627 ger DE-627 rda eng 070 660 DE-600 33.68 bkl Nair, Bindu.G. verfasserin aut Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper reports the possibility to fabricate transparent diodes with the configuration: Fluorine doped Tin Oxide/n-type copper indium oxide/p-type calcium doped copper indium oxide/Silver with better rectification ratio than that of the diodes with Sn-doped Copper Indium Oxide as the n-counterpart of p- calcium doped copper indium oxide. The ideality factor and turn on voltage of the former diodes are determined as ~1.1 and ~ 0.68 respectively while for the latter types they are ~2.38 and ~ 0.5 V respectively. In addition to this, the paper details the structural, morphological, optoelectronic and electrical properties of delafossite crystalline p-type calcium doped copper indium oxide thin films deposited by activated reactive evaporation in oxygen plasma followed by post air annealing. The temperature of crystallization of the films obtained here is the lowest crystallization temperature reported for the delafossite formation of this compound till date. Electrical transport mechanisms governing conductivities in the temperature range 55 – 430 K are also investigated. Thin film Crystallization Transparent conducting oxide Electrical conductivity Transmittance Transparent diode Rahman, Hilal verfasserin aut K, Aijo John. verfasserin aut K, Keerthi. verfasserin aut Shaji, S. verfasserin aut Okram, G.S. verfasserin aut Sharma, Vikash verfasserin aut Philip, Rachel Reena verfasserin aut Enthalten in Thin solid films Amsterdam [u.a.] : Elsevier, 1967 693 Online-Ressource (DE-627)300593503 (DE-600)1482896-0 (DE-576)079165354 nnns volume:693 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-BBI GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik AR 693
spelling	10.1016/j.tsf.2019.137673 doi (DE-627)ELV003286495 (ELSEVIER)S0040-6090(19)30700-X DE-627 ger DE-627 rda eng 070 660 DE-600 33.68 bkl Nair, Bindu.G. verfasserin aut Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper reports the possibility to fabricate transparent diodes with the configuration: Fluorine doped Tin Oxide/n-type copper indium oxide/p-type calcium doped copper indium oxide/Silver with better rectification ratio than that of the diodes with Sn-doped Copper Indium Oxide as the n-counterpart of p- calcium doped copper indium oxide. The ideality factor and turn on voltage of the former diodes are determined as ~1.1 and ~ 0.68 respectively while for the latter types they are ~2.38 and ~ 0.5 V respectively. In addition to this, the paper details the structural, morphological, optoelectronic and electrical properties of delafossite crystalline p-type calcium doped copper indium oxide thin films deposited by activated reactive evaporation in oxygen plasma followed by post air annealing. The temperature of crystallization of the films obtained here is the lowest crystallization temperature reported for the delafossite formation of this compound till date. Electrical transport mechanisms governing conductivities in the temperature range 55 – 430 K are also investigated. Thin film Crystallization Transparent conducting oxide Electrical conductivity Transmittance Transparent diode Rahman, Hilal verfasserin aut K, Aijo John. verfasserin aut K, Keerthi. verfasserin aut Shaji, S. verfasserin aut Okram, G.S. verfasserin aut Sharma, Vikash verfasserin aut Philip, Rachel Reena verfasserin aut Enthalten in Thin solid films Amsterdam [u.a.] : Elsevier, 1967 693 Online-Ressource (DE-627)300593503 (DE-600)1482896-0 (DE-576)079165354 nnns volume:693 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-BBI GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik AR 693
allfields_unstemmed	10.1016/j.tsf.2019.137673 doi (DE-627)ELV003286495 (ELSEVIER)S0040-6090(19)30700-X DE-627 ger DE-627 rda eng 070 660 DE-600 33.68 bkl Nair, Bindu.G. verfasserin aut Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper reports the possibility to fabricate transparent diodes with the configuration: Fluorine doped Tin Oxide/n-type copper indium oxide/p-type calcium doped copper indium oxide/Silver with better rectification ratio than that of the diodes with Sn-doped Copper Indium Oxide as the n-counterpart of p- calcium doped copper indium oxide. The ideality factor and turn on voltage of the former diodes are determined as ~1.1 and ~ 0.68 respectively while for the latter types they are ~2.38 and ~ 0.5 V respectively. In addition to this, the paper details the structural, morphological, optoelectronic and electrical properties of delafossite crystalline p-type calcium doped copper indium oxide thin films deposited by activated reactive evaporation in oxygen plasma followed by post air annealing. The temperature of crystallization of the films obtained here is the lowest crystallization temperature reported for the delafossite formation of this compound till date. Electrical transport mechanisms governing conductivities in the temperature range 55 – 430 K are also investigated. Thin film Crystallization Transparent conducting oxide Electrical conductivity Transmittance Transparent diode Rahman, Hilal verfasserin aut K, Aijo John. verfasserin aut K, Keerthi. verfasserin aut Shaji, S. verfasserin aut Okram, G.S. verfasserin aut Sharma, Vikash verfasserin aut Philip, Rachel Reena verfasserin aut Enthalten in Thin solid films Amsterdam [u.a.] : Elsevier, 1967 693 Online-Ressource (DE-627)300593503 (DE-600)1482896-0 (DE-576)079165354 nnns volume:693 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-BBI GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik AR 693
allfieldsGer	10.1016/j.tsf.2019.137673 doi (DE-627)ELV003286495 (ELSEVIER)S0040-6090(19)30700-X DE-627 ger DE-627 rda eng 070 660 DE-600 33.68 bkl Nair, Bindu.G. verfasserin aut Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper reports the possibility to fabricate transparent diodes with the configuration: Fluorine doped Tin Oxide/n-type copper indium oxide/p-type calcium doped copper indium oxide/Silver with better rectification ratio than that of the diodes with Sn-doped Copper Indium Oxide as the n-counterpart of p- calcium doped copper indium oxide. The ideality factor and turn on voltage of the former diodes are determined as ~1.1 and ~ 0.68 respectively while for the latter types they are ~2.38 and ~ 0.5 V respectively. In addition to this, the paper details the structural, morphological, optoelectronic and electrical properties of delafossite crystalline p-type calcium doped copper indium oxide thin films deposited by activated reactive evaporation in oxygen plasma followed by post air annealing. The temperature of crystallization of the films obtained here is the lowest crystallization temperature reported for the delafossite formation of this compound till date. Electrical transport mechanisms governing conductivities in the temperature range 55 – 430 K are also investigated. Thin film Crystallization Transparent conducting oxide Electrical conductivity Transmittance Transparent diode Rahman, Hilal verfasserin aut K, Aijo John. verfasserin aut K, Keerthi. verfasserin aut Shaji, S. verfasserin aut Okram, G.S. verfasserin aut Sharma, Vikash verfasserin aut Philip, Rachel Reena verfasserin aut Enthalten in Thin solid films Amsterdam [u.a.] : Elsevier, 1967 693 Online-Ressource (DE-627)300593503 (DE-600)1482896-0 (DE-576)079165354 nnns volume:693 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-BBI GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik AR 693
allfieldsSound	10.1016/j.tsf.2019.137673 doi (DE-627)ELV003286495 (ELSEVIER)S0040-6090(19)30700-X DE-627 ger DE-627 rda eng 070 660 DE-600 33.68 bkl Nair, Bindu.G. verfasserin aut Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper reports the possibility to fabricate transparent diodes with the configuration: Fluorine doped Tin Oxide/n-type copper indium oxide/p-type calcium doped copper indium oxide/Silver with better rectification ratio than that of the diodes with Sn-doped Copper Indium Oxide as the n-counterpart of p- calcium doped copper indium oxide. The ideality factor and turn on voltage of the former diodes are determined as ~1.1 and ~ 0.68 respectively while for the latter types they are ~2.38 and ~ 0.5 V respectively. In addition to this, the paper details the structural, morphological, optoelectronic and electrical properties of delafossite crystalline p-type calcium doped copper indium oxide thin films deposited by activated reactive evaporation in oxygen plasma followed by post air annealing. The temperature of crystallization of the films obtained here is the lowest crystallization temperature reported for the delafossite formation of this compound till date. Electrical transport mechanisms governing conductivities in the temperature range 55 – 430 K are also investigated. Thin film Crystallization Transparent conducting oxide Electrical conductivity Transmittance Transparent diode Rahman, Hilal verfasserin aut K, Aijo John. verfasserin aut K, Keerthi. verfasserin aut Shaji, S. verfasserin aut Okram, G.S. verfasserin aut Sharma, Vikash verfasserin aut Philip, Rachel Reena verfasserin aut Enthalten in Thin solid films Amsterdam [u.a.] : Elsevier, 1967 693 Online-Ressource (DE-627)300593503 (DE-600)1482896-0 (DE-576)079165354 nnns volume:693 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-BBI GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik AR 693
language	English
source	Enthalten in Thin solid films 693 volume:693
sourceStr	Enthalten in Thin solid films 693 volume:693
format_phy_str_mv	Article
bklname	Oberflächen Dünne Schichten Grenzflächen
institution	findex.gbv.de
topic_facet	Thin film Crystallization Transparent conducting oxide Electrical conductivity Transmittance Transparent diode
dewey-raw	070
isfreeaccess_bool	false
container_title	Thin solid films
authorswithroles_txt_mv	Nair, Bindu.G. @@aut@@ Rahman, Hilal @@aut@@ K, Aijo John. @@aut@@ K, Keerthi. @@aut@@ Shaji, S. @@aut@@ Okram, G.S. @@aut@@ Sharma, Vikash @@aut@@ Philip, Rachel Reena @@aut@@
publishDateDaySort_date	2019-01-01T00:00:00Z
hierarchy_top_id	300593503
dewey-sort	270
id	ELV003286495
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV003286495</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230524145413.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230430s2019 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.tsf.2019.137673</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV003286495</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0040-6090(19)30700-X</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">070</subfield><subfield code="a">660</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.68</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Nair, Bindu.G.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">This paper reports the possibility to fabricate transparent diodes with the configuration: Fluorine doped Tin Oxide/n-type copper indium oxide/p-type calcium doped copper indium oxide/Silver with better rectification ratio than that of the diodes with Sn-doped Copper Indium Oxide as the n-counterpart of p- calcium doped copper indium oxide. The ideality factor and turn on voltage of the former diodes are determined as ~1.1 and ~ 0.68 respectively while for the latter types they are ~2.38 and ~ 0.5 V respectively. In addition to this, the paper details the structural, morphological, optoelectronic and electrical properties of delafossite crystalline p-type calcium doped copper indium oxide thin films deposited by activated reactive evaporation in oxygen plasma followed by post air annealing. The temperature of crystallization of the films obtained here is the lowest crystallization temperature reported for the delafossite formation of this compound till date. Electrical transport mechanisms governing conductivities in the temperature range 55 – 430 K are also investigated.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Thin film</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Crystallization</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Transparent conducting oxide</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electrical conductivity</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Transmittance</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Transparent diode</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Rahman, Hilal</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">K, Aijo John.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">K, Keerthi.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Shaji, S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Okram, G.S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sharma, Vikash</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Philip, Rachel Reena</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Thin solid films</subfield><subfield code="d">Amsterdam [u.a.] : Elsevier, 1967</subfield><subfield code="g">693</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)300593503</subfield><subfield code="w">(DE-600)1482896-0</subfield><subfield code="w">(DE-576)079165354</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:693</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OPC-BBI</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2038</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2065</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2068</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2113</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2118</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2147</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2148</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2522</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.68</subfield><subfield code="j">Oberflächen</subfield><subfield code="j">Dünne Schichten</subfield><subfield code="j">Grenzflächen</subfield><subfield code="x">Physik</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">693</subfield></datafield></record></collection>
author	Nair, Bindu.G.
spellingShingle	Nair, Bindu.G. ddc 070 bkl 33.68 misc Thin film misc Crystallization misc Transparent conducting oxide misc Electrical conductivity misc Transmittance misc Transparent diode Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications
authorStr	Nair, Bindu.G.
ppnlink_with_tag_str_mv	@@773@@(DE-627)300593503
format	electronic Article
dewey-ones	070 - News media, journalism & publishing 660 - Chemical engineering
delete_txt_mv	keep
author_role	aut aut aut aut aut aut aut aut
collection	elsevier
remote_str	true
illustrated	Not Illustrated
topic_title	070 660 DE-600 33.68 bkl Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications Thin film Crystallization Transparent conducting oxide Electrical conductivity Transmittance Transparent diode
topic	ddc 070 bkl 33.68 misc Thin film misc Crystallization misc Transparent conducting oxide misc Electrical conductivity misc Transmittance misc Transparent diode
topic_unstemmed	ddc 070 bkl 33.68 misc Thin film misc Crystallization misc Transparent conducting oxide misc Electrical conductivity misc Transmittance misc Transparent diode
topic_browse	ddc 070 bkl 33.68 misc Thin film misc Crystallization misc Transparent conducting oxide misc Electrical conductivity misc Transmittance misc Transparent diode
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	Thin solid films
hierarchy_parent_id	300593503
dewey-tens	070 - News media, journalism & publishing 660 - Chemical engineering
hierarchy_top_title	Thin solid films
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)300593503 (DE-600)1482896-0 (DE-576)079165354
title	Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications
ctrlnum	(DE-627)ELV003286495 (ELSEVIER)S0040-6090(19)30700-X
title_full	Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications
author_sort	Nair, Bindu.G.
journal	Thin solid films
journalStr	Thin solid films
lang_code	eng
isOA_bool	false
dewey-hundreds	000 - Computer science, information & general works 600 - Technology
recordtype	marc
publishDateSort	2019
contenttype_str_mv	zzz
author_browse	Nair, Bindu.G. Rahman, Hilal K, Aijo John. K, Keerthi. Shaji, S. Okram, G.S. Sharma, Vikash Philip, Rachel Reena
container_volume	693
class	070 660 DE-600 33.68 bkl
format_se	Elektronische Aufsätze
author-letter	Nair, Bindu.G.
doi_str_mv	10.1016/j.tsf.2019.137673
dewey-full	070 660
author2-role	verfasserin
title_sort	calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications
title_auth	Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications
abstract	This paper reports the possibility to fabricate transparent diodes with the configuration: Fluorine doped Tin Oxide/n-type copper indium oxide/p-type calcium doped copper indium oxide/Silver with better rectification ratio than that of the diodes with Sn-doped Copper Indium Oxide as the n-counterpart of p- calcium doped copper indium oxide. The ideality factor and turn on voltage of the former diodes are determined as ~1.1 and ~ 0.68 respectively while for the latter types they are ~2.38 and ~ 0.5 V respectively. In addition to this, the paper details the structural, morphological, optoelectronic and electrical properties of delafossite crystalline p-type calcium doped copper indium oxide thin films deposited by activated reactive evaporation in oxygen plasma followed by post air annealing. The temperature of crystallization of the films obtained here is the lowest crystallization temperature reported for the delafossite formation of this compound till date. Electrical transport mechanisms governing conductivities in the temperature range 55 – 430 K are also investigated.
abstractGer	This paper reports the possibility to fabricate transparent diodes with the configuration: Fluorine doped Tin Oxide/n-type copper indium oxide/p-type calcium doped copper indium oxide/Silver with better rectification ratio than that of the diodes with Sn-doped Copper Indium Oxide as the n-counterpart of p- calcium doped copper indium oxide. The ideality factor and turn on voltage of the former diodes are determined as ~1.1 and ~ 0.68 respectively while for the latter types they are ~2.38 and ~ 0.5 V respectively. In addition to this, the paper details the structural, morphological, optoelectronic and electrical properties of delafossite crystalline p-type calcium doped copper indium oxide thin films deposited by activated reactive evaporation in oxygen plasma followed by post air annealing. The temperature of crystallization of the films obtained here is the lowest crystallization temperature reported for the delafossite formation of this compound till date. Electrical transport mechanisms governing conductivities in the temperature range 55 – 430 K are also investigated.
abstract_unstemmed	This paper reports the possibility to fabricate transparent diodes with the configuration: Fluorine doped Tin Oxide/n-type copper indium oxide/p-type calcium doped copper indium oxide/Silver with better rectification ratio than that of the diodes with Sn-doped Copper Indium Oxide as the n-counterpart of p- calcium doped copper indium oxide. The ideality factor and turn on voltage of the former diodes are determined as ~1.1 and ~ 0.68 respectively while for the latter types they are ~2.38 and ~ 0.5 V respectively. In addition to this, the paper details the structural, morphological, optoelectronic and electrical properties of delafossite crystalline p-type calcium doped copper indium oxide thin films deposited by activated reactive evaporation in oxygen plasma followed by post air annealing. The temperature of crystallization of the films obtained here is the lowest crystallization temperature reported for the delafossite formation of this compound till date. Electrical transport mechanisms governing conductivities in the temperature range 55 – 430 K are also investigated.
collection_details	GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-BBI GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393
title_short	Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications
remote_bool	true
author2	Rahman, Hilal K, Aijo John K, Keerthi Shaji, S. Okram, G.S. Sharma, Vikash Philip, Rachel Reena
author2Str	Rahman, Hilal K, Aijo John K, Keerthi Shaji, S. Okram, G.S. Sharma, Vikash Philip, Rachel Reena
ppnlink	300593503
mediatype_str_mv	c
isOA_txt	false
hochschulschrift_bool	false
doi_str	10.1016/j.tsf.2019.137673
up_date	2024-07-06T19:07:08.039Z
_version_	1803857772455919616
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV003286495</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230524145413.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230430s2019 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.tsf.2019.137673</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV003286495</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0040-6090(19)30700-X</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">070</subfield><subfield code="a">660</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.68</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Nair, Bindu.G.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">This paper reports the possibility to fabricate transparent diodes with the configuration: Fluorine doped Tin Oxide/n-type copper indium oxide/p-type calcium doped copper indium oxide/Silver with better rectification ratio than that of the diodes with Sn-doped Copper Indium Oxide as the n-counterpart of p- calcium doped copper indium oxide. The ideality factor and turn on voltage of the former diodes are determined as ~1.1 and ~ 0.68 respectively while for the latter types they are ~2.38 and ~ 0.5 V respectively. In addition to this, the paper details the structural, morphological, optoelectronic and electrical properties of delafossite crystalline p-type calcium doped copper indium oxide thin films deposited by activated reactive evaporation in oxygen plasma followed by post air annealing. The temperature of crystallization of the films obtained here is the lowest crystallization temperature reported for the delafossite formation of this compound till date. Electrical transport mechanisms governing conductivities in the temperature range 55 – 430 K are also investigated.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Thin film</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Crystallization</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Transparent conducting oxide</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electrical conductivity</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Transmittance</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Transparent diode</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Rahman, Hilal</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">K, Aijo John.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">K, Keerthi.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Shaji, S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Okram, G.S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sharma, Vikash</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Philip, Rachel Reena</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Thin solid films</subfield><subfield code="d">Amsterdam [u.a.] : Elsevier, 1967</subfield><subfield code="g">693</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)300593503</subfield><subfield code="w">(DE-600)1482896-0</subfield><subfield code="w">(DE-576)079165354</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:693</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OPC-BBI</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2038</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2065</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2068</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2113</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2118</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2147</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2148</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2522</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.68</subfield><subfield code="j">Oberflächen</subfield><subfield code="j">Dünne Schichten</subfield><subfield code="j">Grenzflächen</subfield><subfield code="x">Physik</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">693</subfield></datafield></record></collection>
score	7.4019423

Nicht das Richtige dabei?

Schreiben Sie uns!

Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?