Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications
This paper reports the possibility to fabricate transparent diodes with the configuration: Fluorine doped Tin Oxide/n-type copper indium oxide/p-type calcium doped copper indium oxide/Silver with better rectification ratio than that of the diodes with Sn-doped Copper Indium Oxide as the n-counterpar...
Ausführliche Beschreibung
Autor*in: |
Nair, Bindu.G. [verfasserIn] Rahman, Hilal [verfasserIn] K, Aijo John. [verfasserIn] K, Keerthi. [verfasserIn] Shaji, S. [verfasserIn] Okram, G.S. [verfasserIn] Sharma, Vikash [verfasserIn] Philip, Rachel Reena [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2019 |
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Schlagwörter: |
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Übergeordnetes Werk: |
Enthalten in: Thin solid films - Amsterdam [u.a.] : Elsevier, 1967, 693 |
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Übergeordnetes Werk: |
volume:693 |
DOI / URN: |
10.1016/j.tsf.2019.137673 |
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Katalog-ID: |
ELV003286495 |
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520 | |a This paper reports the possibility to fabricate transparent diodes with the configuration: Fluorine doped Tin Oxide/n-type copper indium oxide/p-type calcium doped copper indium oxide/Silver with better rectification ratio than that of the diodes with Sn-doped Copper Indium Oxide as the n-counterpart of p- calcium doped copper indium oxide. The ideality factor and turn on voltage of the former diodes are determined as ~1.1 and ~ 0.68 respectively while for the latter types they are ~2.38 and ~ 0.5 V respectively. In addition to this, the paper details the structural, morphological, optoelectronic and electrical properties of delafossite crystalline p-type calcium doped copper indium oxide thin films deposited by activated reactive evaporation in oxygen plasma followed by post air annealing. The temperature of crystallization of the films obtained here is the lowest crystallization temperature reported for the delafossite formation of this compound till date. Electrical transport mechanisms governing conductivities in the temperature range 55 – 430 K are also investigated. | ||
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700 | 1 | |a Rahman, Hilal |e verfasserin |4 aut | |
700 | 1 | |a K, Aijo John. |e verfasserin |4 aut | |
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700 | 1 | |a Okram, G.S. |e verfasserin |4 aut | |
700 | 1 | |a Sharma, Vikash |e verfasserin |4 aut | |
700 | 1 | |a Philip, Rachel Reena |e verfasserin |4 aut | |
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10.1016/j.tsf.2019.137673 doi (DE-627)ELV003286495 (ELSEVIER)S0040-6090(19)30700-X DE-627 ger DE-627 rda eng 070 660 DE-600 33.68 bkl Nair, Bindu.G. verfasserin aut Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper reports the possibility to fabricate transparent diodes with the configuration: Fluorine doped Tin Oxide/n-type copper indium oxide/p-type calcium doped copper indium oxide/Silver with better rectification ratio than that of the diodes with Sn-doped Copper Indium Oxide as the n-counterpart of p- calcium doped copper indium oxide. The ideality factor and turn on voltage of the former diodes are determined as ~1.1 and ~ 0.68 respectively while for the latter types they are ~2.38 and ~ 0.5 V respectively. In addition to this, the paper details the structural, morphological, optoelectronic and electrical properties of delafossite crystalline p-type calcium doped copper indium oxide thin films deposited by activated reactive evaporation in oxygen plasma followed by post air annealing. The temperature of crystallization of the films obtained here is the lowest crystallization temperature reported for the delafossite formation of this compound till date. Electrical transport mechanisms governing conductivities in the temperature range 55 – 430 K are also investigated. Thin film Crystallization Transparent conducting oxide Electrical conductivity Transmittance Transparent diode Rahman, Hilal verfasserin aut K, Aijo John. verfasserin aut K, Keerthi. verfasserin aut Shaji, S. verfasserin aut Okram, G.S. verfasserin aut Sharma, Vikash verfasserin aut Philip, Rachel Reena verfasserin aut Enthalten in Thin solid films Amsterdam [u.a.] : Elsevier, 1967 693 Online-Ressource (DE-627)300593503 (DE-600)1482896-0 (DE-576)079165354 nnns volume:693 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-BBI GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik AR 693 |
spelling |
10.1016/j.tsf.2019.137673 doi (DE-627)ELV003286495 (ELSEVIER)S0040-6090(19)30700-X DE-627 ger DE-627 rda eng 070 660 DE-600 33.68 bkl Nair, Bindu.G. verfasserin aut Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper reports the possibility to fabricate transparent diodes with the configuration: Fluorine doped Tin Oxide/n-type copper indium oxide/p-type calcium doped copper indium oxide/Silver with better rectification ratio than that of the diodes with Sn-doped Copper Indium Oxide as the n-counterpart of p- calcium doped copper indium oxide. The ideality factor and turn on voltage of the former diodes are determined as ~1.1 and ~ 0.68 respectively while for the latter types they are ~2.38 and ~ 0.5 V respectively. In addition to this, the paper details the structural, morphological, optoelectronic and electrical properties of delafossite crystalline p-type calcium doped copper indium oxide thin films deposited by activated reactive evaporation in oxygen plasma followed by post air annealing. The temperature of crystallization of the films obtained here is the lowest crystallization temperature reported for the delafossite formation of this compound till date. Electrical transport mechanisms governing conductivities in the temperature range 55 – 430 K are also investigated. Thin film Crystallization Transparent conducting oxide Electrical conductivity Transmittance Transparent diode Rahman, Hilal verfasserin aut K, Aijo John. verfasserin aut K, Keerthi. verfasserin aut Shaji, S. verfasserin aut Okram, G.S. verfasserin aut Sharma, Vikash verfasserin aut Philip, Rachel Reena verfasserin aut Enthalten in Thin solid films Amsterdam [u.a.] : Elsevier, 1967 693 Online-Ressource (DE-627)300593503 (DE-600)1482896-0 (DE-576)079165354 nnns volume:693 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-BBI GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik AR 693 |
allfields_unstemmed |
10.1016/j.tsf.2019.137673 doi (DE-627)ELV003286495 (ELSEVIER)S0040-6090(19)30700-X DE-627 ger DE-627 rda eng 070 660 DE-600 33.68 bkl Nair, Bindu.G. verfasserin aut Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper reports the possibility to fabricate transparent diodes with the configuration: Fluorine doped Tin Oxide/n-type copper indium oxide/p-type calcium doped copper indium oxide/Silver with better rectification ratio than that of the diodes with Sn-doped Copper Indium Oxide as the n-counterpart of p- calcium doped copper indium oxide. The ideality factor and turn on voltage of the former diodes are determined as ~1.1 and ~ 0.68 respectively while for the latter types they are ~2.38 and ~ 0.5 V respectively. In addition to this, the paper details the structural, morphological, optoelectronic and electrical properties of delafossite crystalline p-type calcium doped copper indium oxide thin films deposited by activated reactive evaporation in oxygen plasma followed by post air annealing. The temperature of crystallization of the films obtained here is the lowest crystallization temperature reported for the delafossite formation of this compound till date. Electrical transport mechanisms governing conductivities in the temperature range 55 – 430 K are also investigated. Thin film Crystallization Transparent conducting oxide Electrical conductivity Transmittance Transparent diode Rahman, Hilal verfasserin aut K, Aijo John. verfasserin aut K, Keerthi. verfasserin aut Shaji, S. verfasserin aut Okram, G.S. verfasserin aut Sharma, Vikash verfasserin aut Philip, Rachel Reena verfasserin aut Enthalten in Thin solid films Amsterdam [u.a.] : Elsevier, 1967 693 Online-Ressource (DE-627)300593503 (DE-600)1482896-0 (DE-576)079165354 nnns volume:693 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-BBI GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik AR 693 |
allfieldsGer |
10.1016/j.tsf.2019.137673 doi (DE-627)ELV003286495 (ELSEVIER)S0040-6090(19)30700-X DE-627 ger DE-627 rda eng 070 660 DE-600 33.68 bkl Nair, Bindu.G. verfasserin aut Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper reports the possibility to fabricate transparent diodes with the configuration: Fluorine doped Tin Oxide/n-type copper indium oxide/p-type calcium doped copper indium oxide/Silver with better rectification ratio than that of the diodes with Sn-doped Copper Indium Oxide as the n-counterpart of p- calcium doped copper indium oxide. The ideality factor and turn on voltage of the former diodes are determined as ~1.1 and ~ 0.68 respectively while for the latter types they are ~2.38 and ~ 0.5 V respectively. In addition to this, the paper details the structural, morphological, optoelectronic and electrical properties of delafossite crystalline p-type calcium doped copper indium oxide thin films deposited by activated reactive evaporation in oxygen plasma followed by post air annealing. The temperature of crystallization of the films obtained here is the lowest crystallization temperature reported for the delafossite formation of this compound till date. Electrical transport mechanisms governing conductivities in the temperature range 55 – 430 K are also investigated. Thin film Crystallization Transparent conducting oxide Electrical conductivity Transmittance Transparent diode Rahman, Hilal verfasserin aut K, Aijo John. verfasserin aut K, Keerthi. verfasserin aut Shaji, S. verfasserin aut Okram, G.S. verfasserin aut Sharma, Vikash verfasserin aut Philip, Rachel Reena verfasserin aut Enthalten in Thin solid films Amsterdam [u.a.] : Elsevier, 1967 693 Online-Ressource (DE-627)300593503 (DE-600)1482896-0 (DE-576)079165354 nnns volume:693 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-BBI GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik AR 693 |
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10.1016/j.tsf.2019.137673 doi (DE-627)ELV003286495 (ELSEVIER)S0040-6090(19)30700-X DE-627 ger DE-627 rda eng 070 660 DE-600 33.68 bkl Nair, Bindu.G. verfasserin aut Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier This paper reports the possibility to fabricate transparent diodes with the configuration: Fluorine doped Tin Oxide/n-type copper indium oxide/p-type calcium doped copper indium oxide/Silver with better rectification ratio than that of the diodes with Sn-doped Copper Indium Oxide as the n-counterpart of p- calcium doped copper indium oxide. The ideality factor and turn on voltage of the former diodes are determined as ~1.1 and ~ 0.68 respectively while for the latter types they are ~2.38 and ~ 0.5 V respectively. In addition to this, the paper details the structural, morphological, optoelectronic and electrical properties of delafossite crystalline p-type calcium doped copper indium oxide thin films deposited by activated reactive evaporation in oxygen plasma followed by post air annealing. The temperature of crystallization of the films obtained here is the lowest crystallization temperature reported for the delafossite formation of this compound till date. Electrical transport mechanisms governing conductivities in the temperature range 55 – 430 K are also investigated. Thin film Crystallization Transparent conducting oxide Electrical conductivity Transmittance Transparent diode Rahman, Hilal verfasserin aut K, Aijo John. verfasserin aut K, Keerthi. verfasserin aut Shaji, S. verfasserin aut Okram, G.S. verfasserin aut Sharma, Vikash verfasserin aut Philip, Rachel Reena verfasserin aut Enthalten in Thin solid films Amsterdam [u.a.] : Elsevier, 1967 693 Online-Ressource (DE-627)300593503 (DE-600)1482896-0 (DE-576)079165354 nnns volume:693 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA SSG-OPC-BBI GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik AR 693 |
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Nair, Bindu.G. @@aut@@ Rahman, Hilal @@aut@@ K, Aijo John. @@aut@@ K, Keerthi. @@aut@@ Shaji, S. @@aut@@ Okram, G.S. @@aut@@ Sharma, Vikash @@aut@@ Philip, Rachel Reena @@aut@@ |
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Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications |
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Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications |
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Nair, Bindu.G. |
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Nair, Bindu.G. Rahman, Hilal K, Aijo John. K, Keerthi. Shaji, S. Okram, G.S. Sharma, Vikash Philip, Rachel Reena |
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Nair, Bindu.G. |
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10.1016/j.tsf.2019.137673 |
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calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications |
title_auth |
Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications |
abstract |
This paper reports the possibility to fabricate transparent diodes with the configuration: Fluorine doped Tin Oxide/n-type copper indium oxide/p-type calcium doped copper indium oxide/Silver with better rectification ratio than that of the diodes with Sn-doped Copper Indium Oxide as the n-counterpart of p- calcium doped copper indium oxide. The ideality factor and turn on voltage of the former diodes are determined as ~1.1 and ~ 0.68 respectively while for the latter types they are ~2.38 and ~ 0.5 V respectively. In addition to this, the paper details the structural, morphological, optoelectronic and electrical properties of delafossite crystalline p-type calcium doped copper indium oxide thin films deposited by activated reactive evaporation in oxygen plasma followed by post air annealing. The temperature of crystallization of the films obtained here is the lowest crystallization temperature reported for the delafossite formation of this compound till date. Electrical transport mechanisms governing conductivities in the temperature range 55 – 430 K are also investigated. |
abstractGer |
This paper reports the possibility to fabricate transparent diodes with the configuration: Fluorine doped Tin Oxide/n-type copper indium oxide/p-type calcium doped copper indium oxide/Silver with better rectification ratio than that of the diodes with Sn-doped Copper Indium Oxide as the n-counterpart of p- calcium doped copper indium oxide. The ideality factor and turn on voltage of the former diodes are determined as ~1.1 and ~ 0.68 respectively while for the latter types they are ~2.38 and ~ 0.5 V respectively. In addition to this, the paper details the structural, morphological, optoelectronic and electrical properties of delafossite crystalline p-type calcium doped copper indium oxide thin films deposited by activated reactive evaporation in oxygen plasma followed by post air annealing. The temperature of crystallization of the films obtained here is the lowest crystallization temperature reported for the delafossite formation of this compound till date. Electrical transport mechanisms governing conductivities in the temperature range 55 – 430 K are also investigated. |
abstract_unstemmed |
This paper reports the possibility to fabricate transparent diodes with the configuration: Fluorine doped Tin Oxide/n-type copper indium oxide/p-type calcium doped copper indium oxide/Silver with better rectification ratio than that of the diodes with Sn-doped Copper Indium Oxide as the n-counterpart of p- calcium doped copper indium oxide. The ideality factor and turn on voltage of the former diodes are determined as ~1.1 and ~ 0.68 respectively while for the latter types they are ~2.38 and ~ 0.5 V respectively. In addition to this, the paper details the structural, morphological, optoelectronic and electrical properties of delafossite crystalline p-type calcium doped copper indium oxide thin films deposited by activated reactive evaporation in oxygen plasma followed by post air annealing. The temperature of crystallization of the films obtained here is the lowest crystallization temperature reported for the delafossite formation of this compound till date. Electrical transport mechanisms governing conductivities in the temperature range 55 – 430 K are also investigated. |
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title_short |
Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications |
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Rahman, Hilal K, Aijo John K, Keerthi Shaji, S. Okram, G.S. Sharma, Vikash Philip, Rachel Reena |
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up_date |
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