Enhanced tunable dual emission of Cu:InP/ZnS quantum dots enabled by introducing Ag ions
Transition metal ions doping has been an effective method to optimize the optical properties of quantum dots (QDs) and attracted much interest in recent years. In this work, Cu doped InP/ZnS (Cu:InP/ZnS) QDs have been synthesized via a nucleation-doping method and exhibit dual emission which consist...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Wei, Xian [verfasserIn] Mei, Shiliang [verfasserIn] Zhang, Guilin [verfasserIn] Su, Danlu [verfasserIn] Xie, Fengxian [verfasserIn] Zhang, Wanlu [verfasserIn] Guo, Ruiqian [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2019 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Applied surface science - Amsterdam : Elsevier, 1985, 493, Seite 605-612 |
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| Übergeordnetes Werk: |
volume:493 ; pages:605-612 |
| DOI / URN: |
10.1016/j.apsusc.2019.06.059 |
|---|
| Katalog-ID: |
ELV003287106 |
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| 245 | 1 | 0 | |a Enhanced tunable dual emission of Cu:InP/ZnS quantum dots enabled by introducing Ag ions |
| 264 | 1 | |c 2019 | |
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| 520 | |a Transition metal ions doping has been an effective method to optimize the optical properties of quantum dots (QDs) and attracted much interest in recent years. In this work, Cu doped InP/ZnS (Cu:InP/ZnS) QDs have been synthesized via a nucleation-doping method and exhibit dual emission which consists of the intrinsic emission and the dopant emission. With the incremental Cu concentration from 0% to 10%, the dopant emission could be largely tuned from 598 to 707 nm. After introducing Ag ions into Cu:InP/ZnS QDs, the photoluminance (PL) intensity of dual emission gets remarkably enhanced with a PL quantum yield (QY) of 79%, while the emission peak positions change marginally. Through X-ray photoelectron spectroscopy, steady-state and time-resolved PL spectroscopy measurement, it can be concluded that the dopant emission color is mainly dominated by Cu while Ag is conducive to improve the dual emission of Cu and Ag co-doped InP/ZnS QDs. These results would contribute to further understanding dopant-dependent interaction and render this new class of single-phased and dual-emissive QDs a promising future to be applied in white LED. | ||
| 650 | 4 | |a InP/ZnS quantum dots | |
| 650 | 4 | |a Cu, Ag co-doping | |
| 650 | 4 | |a Dual emission | |
| 650 | 4 | |a Tunable | |
| 650 | 4 | |a PL enhancement | |
| 700 | 1 | |a Mei, Shiliang |e verfasserin |0 (orcid)0000-0001-7148-2906 |4 aut | |
| 700 | 1 | |a Zhang, Guilin |e verfasserin |4 aut | |
| 700 | 1 | |a Su, Danlu |e verfasserin |4 aut | |
| 700 | 1 | |a Xie, Fengxian |e verfasserin |4 aut | |
| 700 | 1 | |a Zhang, Wanlu |e verfasserin |4 aut | |
| 700 | 1 | |a Guo, Ruiqian |e verfasserin |0 (orcid)0000-0002-0498-0363 |4 aut | |
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10.1016/j.apsusc.2019.06.059 doi (DE-627)ELV003287106 (ELSEVIER)S0169-4332(19)31753-2 DE-627 ger DE-627 rda eng 670 530 660 DE-600 33.68 bkl 35.18 bkl 52.78 bkl Wei, Xian verfasserin aut Enhanced tunable dual emission of Cu:InP/ZnS quantum dots enabled by introducing Ag ions 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Transition metal ions doping has been an effective method to optimize the optical properties of quantum dots (QDs) and attracted much interest in recent years. In this work, Cu doped InP/ZnS (Cu:InP/ZnS) QDs have been synthesized via a nucleation-doping method and exhibit dual emission which consists of the intrinsic emission and the dopant emission. With the incremental Cu concentration from 0% to 10%, the dopant emission could be largely tuned from 598 to 707 nm. After introducing Ag ions into Cu:InP/ZnS QDs, the photoluminance (PL) intensity of dual emission gets remarkably enhanced with a PL quantum yield (QY) of 79%, while the emission peak positions change marginally. Through X-ray photoelectron spectroscopy, steady-state and time-resolved PL spectroscopy measurement, it can be concluded that the dopant emission color is mainly dominated by Cu while Ag is conducive to improve the dual emission of Cu and Ag co-doped InP/ZnS QDs. These results would contribute to further understanding dopant-dependent interaction and render this new class of single-phased and dual-emissive QDs a promising future to be applied in white LED. InP/ZnS quantum dots Cu, Ag co-doping Dual emission Tunable PL enhancement Mei, Shiliang verfasserin (orcid)0000-0001-7148-2906 aut Zhang, Guilin verfasserin aut Su, Danlu verfasserin aut Xie, Fengxian verfasserin aut Zhang, Wanlu verfasserin aut Guo, Ruiqian verfasserin (orcid)0000-0002-0498-0363 aut Enthalten in Applied surface science Amsterdam : Elsevier, 1985 493, Seite 605-612 Online-Ressource (DE-627)312151128 (DE-600)2002520-8 (DE-576)094476985 nnns volume:493 pages:605-612 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik 35.18 Kolloidchemie Grenzflächenchemie 52.78 Oberflächentechnik Wärmebehandlung AR 493 605-612 |
| spelling |
10.1016/j.apsusc.2019.06.059 doi (DE-627)ELV003287106 (ELSEVIER)S0169-4332(19)31753-2 DE-627 ger DE-627 rda eng 670 530 660 DE-600 33.68 bkl 35.18 bkl 52.78 bkl Wei, Xian verfasserin aut Enhanced tunable dual emission of Cu:InP/ZnS quantum dots enabled by introducing Ag ions 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Transition metal ions doping has been an effective method to optimize the optical properties of quantum dots (QDs) and attracted much interest in recent years. In this work, Cu doped InP/ZnS (Cu:InP/ZnS) QDs have been synthesized via a nucleation-doping method and exhibit dual emission which consists of the intrinsic emission and the dopant emission. With the incremental Cu concentration from 0% to 10%, the dopant emission could be largely tuned from 598 to 707 nm. After introducing Ag ions into Cu:InP/ZnS QDs, the photoluminance (PL) intensity of dual emission gets remarkably enhanced with a PL quantum yield (QY) of 79%, while the emission peak positions change marginally. Through X-ray photoelectron spectroscopy, steady-state and time-resolved PL spectroscopy measurement, it can be concluded that the dopant emission color is mainly dominated by Cu while Ag is conducive to improve the dual emission of Cu and Ag co-doped InP/ZnS QDs. These results would contribute to further understanding dopant-dependent interaction and render this new class of single-phased and dual-emissive QDs a promising future to be applied in white LED. InP/ZnS quantum dots Cu, Ag co-doping Dual emission Tunable PL enhancement Mei, Shiliang verfasserin (orcid)0000-0001-7148-2906 aut Zhang, Guilin verfasserin aut Su, Danlu verfasserin aut Xie, Fengxian verfasserin aut Zhang, Wanlu verfasserin aut Guo, Ruiqian verfasserin (orcid)0000-0002-0498-0363 aut Enthalten in Applied surface science Amsterdam : Elsevier, 1985 493, Seite 605-612 Online-Ressource (DE-627)312151128 (DE-600)2002520-8 (DE-576)094476985 nnns volume:493 pages:605-612 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik 35.18 Kolloidchemie Grenzflächenchemie 52.78 Oberflächentechnik Wärmebehandlung AR 493 605-612 |
| allfields_unstemmed |
10.1016/j.apsusc.2019.06.059 doi (DE-627)ELV003287106 (ELSEVIER)S0169-4332(19)31753-2 DE-627 ger DE-627 rda eng 670 530 660 DE-600 33.68 bkl 35.18 bkl 52.78 bkl Wei, Xian verfasserin aut Enhanced tunable dual emission of Cu:InP/ZnS quantum dots enabled by introducing Ag ions 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Transition metal ions doping has been an effective method to optimize the optical properties of quantum dots (QDs) and attracted much interest in recent years. In this work, Cu doped InP/ZnS (Cu:InP/ZnS) QDs have been synthesized via a nucleation-doping method and exhibit dual emission which consists of the intrinsic emission and the dopant emission. With the incremental Cu concentration from 0% to 10%, the dopant emission could be largely tuned from 598 to 707 nm. After introducing Ag ions into Cu:InP/ZnS QDs, the photoluminance (PL) intensity of dual emission gets remarkably enhanced with a PL quantum yield (QY) of 79%, while the emission peak positions change marginally. Through X-ray photoelectron spectroscopy, steady-state and time-resolved PL spectroscopy measurement, it can be concluded that the dopant emission color is mainly dominated by Cu while Ag is conducive to improve the dual emission of Cu and Ag co-doped InP/ZnS QDs. These results would contribute to further understanding dopant-dependent interaction and render this new class of single-phased and dual-emissive QDs a promising future to be applied in white LED. InP/ZnS quantum dots Cu, Ag co-doping Dual emission Tunable PL enhancement Mei, Shiliang verfasserin (orcid)0000-0001-7148-2906 aut Zhang, Guilin verfasserin aut Su, Danlu verfasserin aut Xie, Fengxian verfasserin aut Zhang, Wanlu verfasserin aut Guo, Ruiqian verfasserin (orcid)0000-0002-0498-0363 aut Enthalten in Applied surface science Amsterdam : Elsevier, 1985 493, Seite 605-612 Online-Ressource (DE-627)312151128 (DE-600)2002520-8 (DE-576)094476985 nnns volume:493 pages:605-612 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik 35.18 Kolloidchemie Grenzflächenchemie 52.78 Oberflächentechnik Wärmebehandlung AR 493 605-612 |
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10.1016/j.apsusc.2019.06.059 doi (DE-627)ELV003287106 (ELSEVIER)S0169-4332(19)31753-2 DE-627 ger DE-627 rda eng 670 530 660 DE-600 33.68 bkl 35.18 bkl 52.78 bkl Wei, Xian verfasserin aut Enhanced tunable dual emission of Cu:InP/ZnS quantum dots enabled by introducing Ag ions 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Transition metal ions doping has been an effective method to optimize the optical properties of quantum dots (QDs) and attracted much interest in recent years. In this work, Cu doped InP/ZnS (Cu:InP/ZnS) QDs have been synthesized via a nucleation-doping method and exhibit dual emission which consists of the intrinsic emission and the dopant emission. With the incremental Cu concentration from 0% to 10%, the dopant emission could be largely tuned from 598 to 707 nm. After introducing Ag ions into Cu:InP/ZnS QDs, the photoluminance (PL) intensity of dual emission gets remarkably enhanced with a PL quantum yield (QY) of 79%, while the emission peak positions change marginally. Through X-ray photoelectron spectroscopy, steady-state and time-resolved PL spectroscopy measurement, it can be concluded that the dopant emission color is mainly dominated by Cu while Ag is conducive to improve the dual emission of Cu and Ag co-doped InP/ZnS QDs. These results would contribute to further understanding dopant-dependent interaction and render this new class of single-phased and dual-emissive QDs a promising future to be applied in white LED. InP/ZnS quantum dots Cu, Ag co-doping Dual emission Tunable PL enhancement Mei, Shiliang verfasserin (orcid)0000-0001-7148-2906 aut Zhang, Guilin verfasserin aut Su, Danlu verfasserin aut Xie, Fengxian verfasserin aut Zhang, Wanlu verfasserin aut Guo, Ruiqian verfasserin (orcid)0000-0002-0498-0363 aut Enthalten in Applied surface science Amsterdam : Elsevier, 1985 493, Seite 605-612 Online-Ressource (DE-627)312151128 (DE-600)2002520-8 (DE-576)094476985 nnns volume:493 pages:605-612 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik 35.18 Kolloidchemie Grenzflächenchemie 52.78 Oberflächentechnik Wärmebehandlung AR 493 605-612 |
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10.1016/j.apsusc.2019.06.059 doi (DE-627)ELV003287106 (ELSEVIER)S0169-4332(19)31753-2 DE-627 ger DE-627 rda eng 670 530 660 DE-600 33.68 bkl 35.18 bkl 52.78 bkl Wei, Xian verfasserin aut Enhanced tunable dual emission of Cu:InP/ZnS quantum dots enabled by introducing Ag ions 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Transition metal ions doping has been an effective method to optimize the optical properties of quantum dots (QDs) and attracted much interest in recent years. In this work, Cu doped InP/ZnS (Cu:InP/ZnS) QDs have been synthesized via a nucleation-doping method and exhibit dual emission which consists of the intrinsic emission and the dopant emission. With the incremental Cu concentration from 0% to 10%, the dopant emission could be largely tuned from 598 to 707 nm. After introducing Ag ions into Cu:InP/ZnS QDs, the photoluminance (PL) intensity of dual emission gets remarkably enhanced with a PL quantum yield (QY) of 79%, while the emission peak positions change marginally. Through X-ray photoelectron spectroscopy, steady-state and time-resolved PL spectroscopy measurement, it can be concluded that the dopant emission color is mainly dominated by Cu while Ag is conducive to improve the dual emission of Cu and Ag co-doped InP/ZnS QDs. These results would contribute to further understanding dopant-dependent interaction and render this new class of single-phased and dual-emissive QDs a promising future to be applied in white LED. InP/ZnS quantum dots Cu, Ag co-doping Dual emission Tunable PL enhancement Mei, Shiliang verfasserin (orcid)0000-0001-7148-2906 aut Zhang, Guilin verfasserin aut Su, Danlu verfasserin aut Xie, Fengxian verfasserin aut Zhang, Wanlu verfasserin aut Guo, Ruiqian verfasserin (orcid)0000-0002-0498-0363 aut Enthalten in Applied surface science Amsterdam : Elsevier, 1985 493, Seite 605-612 Online-Ressource (DE-627)312151128 (DE-600)2002520-8 (DE-576)094476985 nnns volume:493 pages:605-612 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik 35.18 Kolloidchemie Grenzflächenchemie 52.78 Oberflächentechnik Wärmebehandlung AR 493 605-612 |
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InP/ZnS quantum dots Cu, Ag co-doping Dual emission Tunable PL enhancement |
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Wei, Xian @@aut@@ Mei, Shiliang @@aut@@ Zhang, Guilin @@aut@@ Su, Danlu @@aut@@ Xie, Fengxian @@aut@@ Zhang, Wanlu @@aut@@ Guo, Ruiqian @@aut@@ |
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Wei, Xian |
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Wei, Xian ddc 670 bkl 33.68 bkl 35.18 bkl 52.78 misc InP/ZnS quantum dots misc Cu, Ag co-doping misc Dual emission misc Tunable misc PL enhancement Enhanced tunable dual emission of Cu:InP/ZnS quantum dots enabled by introducing Ag ions |
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670 530 660 DE-600 33.68 bkl 35.18 bkl 52.78 bkl Enhanced tunable dual emission of Cu:InP/ZnS quantum dots enabled by introducing Ag ions InP/ZnS quantum dots Cu, Ag co-doping Dual emission Tunable PL enhancement |
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enhanced tunable dual emission of cu:inp/zns quantum dots enabled by introducing ag ions |
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Enhanced tunable dual emission of Cu:InP/ZnS quantum dots enabled by introducing Ag ions |
| abstract |
Transition metal ions doping has been an effective method to optimize the optical properties of quantum dots (QDs) and attracted much interest in recent years. In this work, Cu doped InP/ZnS (Cu:InP/ZnS) QDs have been synthesized via a nucleation-doping method and exhibit dual emission which consists of the intrinsic emission and the dopant emission. With the incremental Cu concentration from 0% to 10%, the dopant emission could be largely tuned from 598 to 707 nm. After introducing Ag ions into Cu:InP/ZnS QDs, the photoluminance (PL) intensity of dual emission gets remarkably enhanced with a PL quantum yield (QY) of 79%, while the emission peak positions change marginally. Through X-ray photoelectron spectroscopy, steady-state and time-resolved PL spectroscopy measurement, it can be concluded that the dopant emission color is mainly dominated by Cu while Ag is conducive to improve the dual emission of Cu and Ag co-doped InP/ZnS QDs. These results would contribute to further understanding dopant-dependent interaction and render this new class of single-phased and dual-emissive QDs a promising future to be applied in white LED. |
| abstractGer |
Transition metal ions doping has been an effective method to optimize the optical properties of quantum dots (QDs) and attracted much interest in recent years. In this work, Cu doped InP/ZnS (Cu:InP/ZnS) QDs have been synthesized via a nucleation-doping method and exhibit dual emission which consists of the intrinsic emission and the dopant emission. With the incremental Cu concentration from 0% to 10%, the dopant emission could be largely tuned from 598 to 707 nm. After introducing Ag ions into Cu:InP/ZnS QDs, the photoluminance (PL) intensity of dual emission gets remarkably enhanced with a PL quantum yield (QY) of 79%, while the emission peak positions change marginally. Through X-ray photoelectron spectroscopy, steady-state and time-resolved PL spectroscopy measurement, it can be concluded that the dopant emission color is mainly dominated by Cu while Ag is conducive to improve the dual emission of Cu and Ag co-doped InP/ZnS QDs. These results would contribute to further understanding dopant-dependent interaction and render this new class of single-phased and dual-emissive QDs a promising future to be applied in white LED. |
| abstract_unstemmed |
Transition metal ions doping has been an effective method to optimize the optical properties of quantum dots (QDs) and attracted much interest in recent years. In this work, Cu doped InP/ZnS (Cu:InP/ZnS) QDs have been synthesized via a nucleation-doping method and exhibit dual emission which consists of the intrinsic emission and the dopant emission. With the incremental Cu concentration from 0% to 10%, the dopant emission could be largely tuned from 598 to 707 nm. After introducing Ag ions into Cu:InP/ZnS QDs, the photoluminance (PL) intensity of dual emission gets remarkably enhanced with a PL quantum yield (QY) of 79%, while the emission peak positions change marginally. Through X-ray photoelectron spectroscopy, steady-state and time-resolved PL spectroscopy measurement, it can be concluded that the dopant emission color is mainly dominated by Cu while Ag is conducive to improve the dual emission of Cu and Ag co-doped InP/ZnS QDs. These results would contribute to further understanding dopant-dependent interaction and render this new class of single-phased and dual-emissive QDs a promising future to be applied in white LED. |
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