2H/1T′ phase WS
Two-dimensional (2D) transition-metal tellurides have recently emerged as a nontrivial material for novel physical properties. Alloying tellurium with other 2D sulfides/selenides will give rise to new interesting phenomena and find broad opportunities in device applications. However, the growth of T...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Wang, Zhan [verfasserIn] Sun, Jing [verfasserIn] Wang, Haolin [verfasserIn] Lei, Yimin [verfasserIn] Xie, Yong [verfasserIn] Wang, Guanfei [verfasserIn] Zhao, Ying [verfasserIn] Li, Xiaobo [verfasserIn] Xu, Hua [verfasserIn] Yang, Xiubo [verfasserIn] Feng, Liping [verfasserIn] Ma, Xiaohua [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2019 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Applied surface science - Amsterdam : Elsevier, 1985, 504 |
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| Übergeordnetes Werk: |
volume:504 |
| DOI / URN: |
10.1016/j.apsusc.2019.144371 |
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| Katalog-ID: |
ELV003294110 |
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| 520 | |a Two-dimensional (2D) transition-metal tellurides have recently emerged as a nontrivial material for novel physical properties. Alloying tellurium with other 2D sulfides/selenides will give rise to new interesting phenomena and find broad opportunities in device applications. However, the growth of Te-based alloys to date is largely limited. Here, we demonstrate a chemical vapour deposition (CVD) method to synthesize monolayer WS2(1−x)Te2x alloys with a wide range of Te composition (x = 0–1.0) via modulating the concentration of hydrogen gas. The substitutional Te-doping at chalcogen sites would lead to a structural phase transition from semiconducting 2H to semimetallic 1T′ phase at high Te ratio (≥50%). Accordingly, the optical band gaps of the alloys have redshifted from 1.97 to 1.67 eV in 2H phase and directly quenched in 1T′ phase. Besides, Te dopants were microscopically observed a random distribution within 2H structure, while S atoms displayed the anisotropic ordering in 1T′ phase. This alloy engineering can also effectively modulate the conductivity behavior of devices. Our work provides a facile method to control the composition and phase in alloying process, which expands the library of 2D materials and inspires the fundamental studies for nanoelectronics and nanophotonics applications. | ||
| 650 | 4 | |a WS | |
| 650 | 4 | |a CVD method | |
| 650 | 4 | |a Band structure | |
| 650 | 4 | |a Phase transition | |
| 650 | 4 | |a Doping behavior | |
| 700 | 1 | |a Sun, Jing |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Haolin |e verfasserin |4 aut | |
| 700 | 1 | |a Lei, Yimin |e verfasserin |4 aut | |
| 700 | 1 | |a Xie, Yong |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Guanfei |e verfasserin |4 aut | |
| 700 | 1 | |a Zhao, Ying |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Xiaobo |e verfasserin |4 aut | |
| 700 | 1 | |a Xu, Hua |e verfasserin |4 aut | |
| 700 | 1 | |a Yang, Xiubo |e verfasserin |4 aut | |
| 700 | 1 | |a Feng, Liping |e verfasserin |4 aut | |
| 700 | 1 | |a Ma, Xiaohua |e verfasserin |0 (orcid)0000-0002-1331-6253 |4 aut | |
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10.1016/j.apsusc.2019.144371 doi (DE-627)ELV003294110 (ELSEVIER)S0169-4332(19)33187-3 DE-627 ger DE-627 rda eng 670 530 660 DE-600 33.68 bkl 35.18 bkl 52.78 bkl Wang, Zhan verfasserin aut 2H/1T′ phase WS 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Two-dimensional (2D) transition-metal tellurides have recently emerged as a nontrivial material for novel physical properties. Alloying tellurium with other 2D sulfides/selenides will give rise to new interesting phenomena and find broad opportunities in device applications. However, the growth of Te-based alloys to date is largely limited. Here, we demonstrate a chemical vapour deposition (CVD) method to synthesize monolayer WS2(1−x)Te2x alloys with a wide range of Te composition (x = 0–1.0) via modulating the concentration of hydrogen gas. The substitutional Te-doping at chalcogen sites would lead to a structural phase transition from semiconducting 2H to semimetallic 1T′ phase at high Te ratio (≥50%). Accordingly, the optical band gaps of the alloys have redshifted from 1.97 to 1.67 eV in 2H phase and directly quenched in 1T′ phase. Besides, Te dopants were microscopically observed a random distribution within 2H structure, while S atoms displayed the anisotropic ordering in 1T′ phase. This alloy engineering can also effectively modulate the conductivity behavior of devices. Our work provides a facile method to control the composition and phase in alloying process, which expands the library of 2D materials and inspires the fundamental studies for nanoelectronics and nanophotonics applications. WS CVD method Band structure Phase transition Doping behavior Sun, Jing verfasserin aut Wang, Haolin verfasserin aut Lei, Yimin verfasserin aut Xie, Yong verfasserin aut Wang, Guanfei verfasserin aut Zhao, Ying verfasserin aut Li, Xiaobo verfasserin aut Xu, Hua verfasserin aut Yang, Xiubo verfasserin aut Feng, Liping verfasserin aut Ma, Xiaohua verfasserin (orcid)0000-0002-1331-6253 aut Enthalten in Applied surface science Amsterdam : Elsevier, 1985 504 Online-Ressource (DE-627)312151128 (DE-600)2002520-8 (DE-576)094476985 nnns volume:504 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik 35.18 Kolloidchemie Grenzflächenchemie 52.78 Oberflächentechnik Wärmebehandlung AR 504 |
| spelling |
10.1016/j.apsusc.2019.144371 doi (DE-627)ELV003294110 (ELSEVIER)S0169-4332(19)33187-3 DE-627 ger DE-627 rda eng 670 530 660 DE-600 33.68 bkl 35.18 bkl 52.78 bkl Wang, Zhan verfasserin aut 2H/1T′ phase WS 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Two-dimensional (2D) transition-metal tellurides have recently emerged as a nontrivial material for novel physical properties. Alloying tellurium with other 2D sulfides/selenides will give rise to new interesting phenomena and find broad opportunities in device applications. However, the growth of Te-based alloys to date is largely limited. Here, we demonstrate a chemical vapour deposition (CVD) method to synthesize monolayer WS2(1−x)Te2x alloys with a wide range of Te composition (x = 0–1.0) via modulating the concentration of hydrogen gas. The substitutional Te-doping at chalcogen sites would lead to a structural phase transition from semiconducting 2H to semimetallic 1T′ phase at high Te ratio (≥50%). Accordingly, the optical band gaps of the alloys have redshifted from 1.97 to 1.67 eV in 2H phase and directly quenched in 1T′ phase. Besides, Te dopants were microscopically observed a random distribution within 2H structure, while S atoms displayed the anisotropic ordering in 1T′ phase. This alloy engineering can also effectively modulate the conductivity behavior of devices. Our work provides a facile method to control the composition and phase in alloying process, which expands the library of 2D materials and inspires the fundamental studies for nanoelectronics and nanophotonics applications. WS CVD method Band structure Phase transition Doping behavior Sun, Jing verfasserin aut Wang, Haolin verfasserin aut Lei, Yimin verfasserin aut Xie, Yong verfasserin aut Wang, Guanfei verfasserin aut Zhao, Ying verfasserin aut Li, Xiaobo verfasserin aut Xu, Hua verfasserin aut Yang, Xiubo verfasserin aut Feng, Liping verfasserin aut Ma, Xiaohua verfasserin (orcid)0000-0002-1331-6253 aut Enthalten in Applied surface science Amsterdam : Elsevier, 1985 504 Online-Ressource (DE-627)312151128 (DE-600)2002520-8 (DE-576)094476985 nnns volume:504 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik 35.18 Kolloidchemie Grenzflächenchemie 52.78 Oberflächentechnik Wärmebehandlung AR 504 |
| allfields_unstemmed |
10.1016/j.apsusc.2019.144371 doi (DE-627)ELV003294110 (ELSEVIER)S0169-4332(19)33187-3 DE-627 ger DE-627 rda eng 670 530 660 DE-600 33.68 bkl 35.18 bkl 52.78 bkl Wang, Zhan verfasserin aut 2H/1T′ phase WS 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Two-dimensional (2D) transition-metal tellurides have recently emerged as a nontrivial material for novel physical properties. Alloying tellurium with other 2D sulfides/selenides will give rise to new interesting phenomena and find broad opportunities in device applications. However, the growth of Te-based alloys to date is largely limited. Here, we demonstrate a chemical vapour deposition (CVD) method to synthesize monolayer WS2(1−x)Te2x alloys with a wide range of Te composition (x = 0–1.0) via modulating the concentration of hydrogen gas. The substitutional Te-doping at chalcogen sites would lead to a structural phase transition from semiconducting 2H to semimetallic 1T′ phase at high Te ratio (≥50%). Accordingly, the optical band gaps of the alloys have redshifted from 1.97 to 1.67 eV in 2H phase and directly quenched in 1T′ phase. Besides, Te dopants were microscopically observed a random distribution within 2H structure, while S atoms displayed the anisotropic ordering in 1T′ phase. This alloy engineering can also effectively modulate the conductivity behavior of devices. Our work provides a facile method to control the composition and phase in alloying process, which expands the library of 2D materials and inspires the fundamental studies for nanoelectronics and nanophotonics applications. WS CVD method Band structure Phase transition Doping behavior Sun, Jing verfasserin aut Wang, Haolin verfasserin aut Lei, Yimin verfasserin aut Xie, Yong verfasserin aut Wang, Guanfei verfasserin aut Zhao, Ying verfasserin aut Li, Xiaobo verfasserin aut Xu, Hua verfasserin aut Yang, Xiubo verfasserin aut Feng, Liping verfasserin aut Ma, Xiaohua verfasserin (orcid)0000-0002-1331-6253 aut Enthalten in Applied surface science Amsterdam : Elsevier, 1985 504 Online-Ressource (DE-627)312151128 (DE-600)2002520-8 (DE-576)094476985 nnns volume:504 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik 35.18 Kolloidchemie Grenzflächenchemie 52.78 Oberflächentechnik Wärmebehandlung AR 504 |
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10.1016/j.apsusc.2019.144371 doi (DE-627)ELV003294110 (ELSEVIER)S0169-4332(19)33187-3 DE-627 ger DE-627 rda eng 670 530 660 DE-600 33.68 bkl 35.18 bkl 52.78 bkl Wang, Zhan verfasserin aut 2H/1T′ phase WS 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Two-dimensional (2D) transition-metal tellurides have recently emerged as a nontrivial material for novel physical properties. Alloying tellurium with other 2D sulfides/selenides will give rise to new interesting phenomena and find broad opportunities in device applications. However, the growth of Te-based alloys to date is largely limited. Here, we demonstrate a chemical vapour deposition (CVD) method to synthesize monolayer WS2(1−x)Te2x alloys with a wide range of Te composition (x = 0–1.0) via modulating the concentration of hydrogen gas. The substitutional Te-doping at chalcogen sites would lead to a structural phase transition from semiconducting 2H to semimetallic 1T′ phase at high Te ratio (≥50%). Accordingly, the optical band gaps of the alloys have redshifted from 1.97 to 1.67 eV in 2H phase and directly quenched in 1T′ phase. Besides, Te dopants were microscopically observed a random distribution within 2H structure, while S atoms displayed the anisotropic ordering in 1T′ phase. This alloy engineering can also effectively modulate the conductivity behavior of devices. Our work provides a facile method to control the composition and phase in alloying process, which expands the library of 2D materials and inspires the fundamental studies for nanoelectronics and nanophotonics applications. WS CVD method Band structure Phase transition Doping behavior Sun, Jing verfasserin aut Wang, Haolin verfasserin aut Lei, Yimin verfasserin aut Xie, Yong verfasserin aut Wang, Guanfei verfasserin aut Zhao, Ying verfasserin aut Li, Xiaobo verfasserin aut Xu, Hua verfasserin aut Yang, Xiubo verfasserin aut Feng, Liping verfasserin aut Ma, Xiaohua verfasserin (orcid)0000-0002-1331-6253 aut Enthalten in Applied surface science Amsterdam : Elsevier, 1985 504 Online-Ressource (DE-627)312151128 (DE-600)2002520-8 (DE-576)094476985 nnns volume:504 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik 35.18 Kolloidchemie Grenzflächenchemie 52.78 Oberflächentechnik Wärmebehandlung AR 504 |
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10.1016/j.apsusc.2019.144371 doi (DE-627)ELV003294110 (ELSEVIER)S0169-4332(19)33187-3 DE-627 ger DE-627 rda eng 670 530 660 DE-600 33.68 bkl 35.18 bkl 52.78 bkl Wang, Zhan verfasserin aut 2H/1T′ phase WS 2019 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Two-dimensional (2D) transition-metal tellurides have recently emerged as a nontrivial material for novel physical properties. Alloying tellurium with other 2D sulfides/selenides will give rise to new interesting phenomena and find broad opportunities in device applications. However, the growth of Te-based alloys to date is largely limited. Here, we demonstrate a chemical vapour deposition (CVD) method to synthesize monolayer WS2(1−x)Te2x alloys with a wide range of Te composition (x = 0–1.0) via modulating the concentration of hydrogen gas. The substitutional Te-doping at chalcogen sites would lead to a structural phase transition from semiconducting 2H to semimetallic 1T′ phase at high Te ratio (≥50%). Accordingly, the optical band gaps of the alloys have redshifted from 1.97 to 1.67 eV in 2H phase and directly quenched in 1T′ phase. Besides, Te dopants were microscopically observed a random distribution within 2H structure, while S atoms displayed the anisotropic ordering in 1T′ phase. This alloy engineering can also effectively modulate the conductivity behavior of devices. Our work provides a facile method to control the composition and phase in alloying process, which expands the library of 2D materials and inspires the fundamental studies for nanoelectronics and nanophotonics applications. WS CVD method Band structure Phase transition Doping behavior Sun, Jing verfasserin aut Wang, Haolin verfasserin aut Lei, Yimin verfasserin aut Xie, Yong verfasserin aut Wang, Guanfei verfasserin aut Zhao, Ying verfasserin aut Li, Xiaobo verfasserin aut Xu, Hua verfasserin aut Yang, Xiubo verfasserin aut Feng, Liping verfasserin aut Ma, Xiaohua verfasserin (orcid)0000-0002-1331-6253 aut Enthalten in Applied surface science Amsterdam : Elsevier, 1985 504 Online-Ressource (DE-627)312151128 (DE-600)2002520-8 (DE-576)094476985 nnns volume:504 GBV_USEFLAG_U SYSFLAG_U GBV_ELV SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik 35.18 Kolloidchemie Grenzflächenchemie 52.78 Oberflächentechnik Wärmebehandlung AR 504 |
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Wang, Zhan @@aut@@ Sun, Jing @@aut@@ Wang, Haolin @@aut@@ Lei, Yimin @@aut@@ Xie, Yong @@aut@@ Wang, Guanfei @@aut@@ Zhao, Ying @@aut@@ Li, Xiaobo @@aut@@ Xu, Hua @@aut@@ Yang, Xiubo @@aut@@ Feng, Liping @@aut@@ Ma, Xiaohua @@aut@@ |
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Two-dimensional (2D) transition-metal tellurides have recently emerged as a nontrivial material for novel physical properties. Alloying tellurium with other 2D sulfides/selenides will give rise to new interesting phenomena and find broad opportunities in device applications. However, the growth of Te-based alloys to date is largely limited. Here, we demonstrate a chemical vapour deposition (CVD) method to synthesize monolayer WS2(1−x)Te2x alloys with a wide range of Te composition (x = 0–1.0) via modulating the concentration of hydrogen gas. The substitutional Te-doping at chalcogen sites would lead to a structural phase transition from semiconducting 2H to semimetallic 1T′ phase at high Te ratio (≥50%). Accordingly, the optical band gaps of the alloys have redshifted from 1.97 to 1.67 eV in 2H phase and directly quenched in 1T′ phase. Besides, Te dopants were microscopically observed a random distribution within 2H structure, while S atoms displayed the anisotropic ordering in 1T′ phase. This alloy engineering can also effectively modulate the conductivity behavior of devices. Our work provides a facile method to control the composition and phase in alloying process, which expands the library of 2D materials and inspires the fundamental studies for nanoelectronics and nanophotonics applications. |
| abstractGer |
Two-dimensional (2D) transition-metal tellurides have recently emerged as a nontrivial material for novel physical properties. Alloying tellurium with other 2D sulfides/selenides will give rise to new interesting phenomena and find broad opportunities in device applications. However, the growth of Te-based alloys to date is largely limited. Here, we demonstrate a chemical vapour deposition (CVD) method to synthesize monolayer WS2(1−x)Te2x alloys with a wide range of Te composition (x = 0–1.0) via modulating the concentration of hydrogen gas. The substitutional Te-doping at chalcogen sites would lead to a structural phase transition from semiconducting 2H to semimetallic 1T′ phase at high Te ratio (≥50%). Accordingly, the optical band gaps of the alloys have redshifted from 1.97 to 1.67 eV in 2H phase and directly quenched in 1T′ phase. Besides, Te dopants were microscopically observed a random distribution within 2H structure, while S atoms displayed the anisotropic ordering in 1T′ phase. This alloy engineering can also effectively modulate the conductivity behavior of devices. Our work provides a facile method to control the composition and phase in alloying process, which expands the library of 2D materials and inspires the fundamental studies for nanoelectronics and nanophotonics applications. |
| abstract_unstemmed |
Two-dimensional (2D) transition-metal tellurides have recently emerged as a nontrivial material for novel physical properties. Alloying tellurium with other 2D sulfides/selenides will give rise to new interesting phenomena and find broad opportunities in device applications. However, the growth of Te-based alloys to date is largely limited. Here, we demonstrate a chemical vapour deposition (CVD) method to synthesize monolayer WS2(1−x)Te2x alloys with a wide range of Te composition (x = 0–1.0) via modulating the concentration of hydrogen gas. The substitutional Te-doping at chalcogen sites would lead to a structural phase transition from semiconducting 2H to semimetallic 1T′ phase at high Te ratio (≥50%). Accordingly, the optical band gaps of the alloys have redshifted from 1.97 to 1.67 eV in 2H phase and directly quenched in 1T′ phase. Besides, Te dopants were microscopically observed a random distribution within 2H structure, while S atoms displayed the anisotropic ordering in 1T′ phase. This alloy engineering can also effectively modulate the conductivity behavior of devices. Our work provides a facile method to control the composition and phase in alloying process, which expands the library of 2D materials and inspires the fundamental studies for nanoelectronics and nanophotonics applications. |
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| score |
7.4004154 |